CN100423199C - Composition for forming silicon-cobalt film, silicon-cobalt film, and forming method therefor - Google Patents

Composition for forming silicon-cobalt film, silicon-cobalt film, and forming method therefor Download PDF

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CN100423199C
CN100423199C CNB2004800304942A CN200480030494A CN100423199C CN 100423199 C CN100423199 C CN 100423199C CN B2004800304942 A CNB2004800304942 A CN B2004800304942A CN 200480030494 A CN200480030494 A CN 200480030494A CN 100423199 C CN100423199 C CN 100423199C
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cobalt
silicon
film
composition
compound
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CN1868037A (en
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松木安生
王道海
酒井达也
岩泽晴生
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JSR Corp
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Abstract

Disclosed are a composition and a method for forming a silicon-cobalt film at low production cost without requiring an expensive vacuum apparatus or high-frequency wave generating apparatus. A composition for forming a silicon-cobalt film contains a silicon compound and a cobalt compound. A silicon-cobalt film is formed by applying this composition to a base and treating it with heat or light.

Description

Be used to form composition, silicon-cobalt film of silicon-cobalt film and forming method thereof
Technical field
The composition that the present invention relates to silicon-cobalt film and forming method thereof, is used to form.Say in further detail, relate to when making the mos semiconductor device, particularly the useful composition that is used to form silicon-cobalt film, silicon-cobalt film and forming method thereof when manufacturing possesses the semiconductor device in the gate electrode of silication and source-drain electrode zone.
Background technology
Along with the miniaturization of the highly integrated and pattern of semiconductor device, require the low resistanceization of gate electrode.As the method that gate electrode resistance is reduced, known have by SALICIDE (Self-Aligned Silicide) technology make the method for gate electrode silication.
In Si semiconductor, for forming ohm, the work function at the interface by the metal material that is used to connect up and silicon engages, use metal and silicide to wait the method that improves silicon surface mostly with other kinds such as Co, Ni, Au, Ag, Ti, Pd or Al. in addition, coupling aspect from the lattice constant of resistivity, silicide and the silicon of silicide itself, use cobalt silicide as silicide mostly, (with reference to No. 3382743 communique of patent).
These silicides normally are combined in the metallic diaphragm of Co, Ni, Au, Ag, Ti, Pd, Al etc. on the silicon fiml with vacuum vapour deposition or sputtering method, plasma CVD (Chemical Vapor Deposition) method, hot CVD method, optical cvd method, mocvd method (Metal organic CVD) equal vacuum technology, then by at high temperature handle carry out silication method (with reference to Jpn.J.Appl.Phys.Vol40, pp2778 (calendar year 2001) and Applied Physics, the 63rd volume, o.11, pp1093 (1994)).
, these vapour deposition methods are no matter be physical vapor deposition or chemical vapor deposition, owing in gas phase, pile up silicon and cobalt, make device maximization, cost height, and be easy to generate particle or oxide, therefore, exist to be difficult to the large tracts of land matrix is filmed, and problem such as production cost height.
In addition, vapour deposition method no matter be physical vapor deposition or chemical vapor deposition, becomes gasiform compound owing to all use under vacuum, and therefore, starting compound is restricted, and needs the high vacuum plant of seal, and this also becomes the major reason that manufacturing cost increases.
On the other hand, in various circuit, in order to reduce voltage, cut apart voltage, to be used for assembly heating etc. and to have used resistor.In general, according to its purpose or position etc. is set, be necessary to use a plurality of resistors with various resistance values, therefore, the circuit with such resistor must have certain size, thereby becomes the reason that hinders the electric equipment miniaturization.
Clearly, if can give certain resistance to wiring material, most of resistors in the circuit will no longer need, thereby help the miniaturization of electric equipment. as such wiring material, though silicon-cobalt alloy (cobalt silicide) is considered to likely, as mentioned above, because forming, it needs large-scale device, and therefore the cost height, does not almost carry out the research in this field.
Based on above-mentioned situation, strong request does not need the vacuum plant or the high frequency generating apparatus of high price, and the industry of the silicon of low cost of manufacture-cobalt film becomes embrane method.
Summary of the invention
The present invention In view of the foregoing makes, its purpose be to be provided for forming easily the silicon-cobalt film of the vacuum plant that do not need high price or high frequency generating apparatus, low cost of manufacture composition, use said composition to form the method for silicon-cobalt film and the silicon cobalt film that forms by this method.
According to the present invention, the first, above-mentioned purpose of the present invention can realize that described composition is characterised in that and contains silicon compound and cobalt compound by a kind of composition that is used to form silicon-cobalt film.
In addition, the second, above-mentioned purpose of the present invention can realize by a kind of method that forms silicon-cobalt film, the method of described formation silicon-cobalt film is characterised in that, on matrix, form filming of the above-mentioned composition that is used to form silicon-cobalt film, then, carry out heat and/or optical processing.
In addition, the 3rd, above-mentioned purpose of the present invention can realize by the silicon cobalt film that forms with said method.
Description of drawings
Fig. 1 is the ESCA collection of illustrative plates of silicon-cobalt film of obtaining of embodiment 1.
Embodiment
Below, the present invention will be described in further detail.
Be used to form silicon- The composition of cobalt film
The composition that the present invention is used to form silicon-cobalt film contains silicon compound and cobalt compound.
As long as being used to form the silicon compound that contains in the composition of silicon-cobalt film, the present invention can realize purpose of the present invention, then no matter its kind. for example, in the above-mentioned composition that is used to form silicon-cobalt film, above-mentioned silicon compound can be at least a kind that is selected from the compound of following formula (1a)～(1d) expression:
Si iX 2i+2 (1a)
(wherein, X is the organic group of hydrogen atom, halogen atom or monovalence, and i is the integer (i 〉=2) more than 2 or 2),
Si jX 2j (1b)
(wherein, X is the organic group of hydrogen atom, halogen atom or monovalence, and j is the integer (j 〉=3) more than 3 or 3),
Si mX 2m-2 (1c)
(wherein, X is the organic group of hydrogen atom, halogen atom or monovalence, and m is the integer (m 〉=4) more than 4 or 4),
Si kX k (1d)
(wherein, X is the organic group of hydrogen atom, halogen atom or monovalence, and k is 6 or 8 or 10).
As above-mentioned formula (1a), (1b), (1c) and any monovalent organic radical group of the X (1d), for example can enumerate the aromatic group of the thiazolinyl of the alkyl of carbon number 1～12, carbon number 2～12, the alkynyl of carbon number 2～12 and carbon number 6～12 etc.
In addition, as halogen atom, can enumerate for example chlorine atom and bromine atoms.
In above-mentioned formula (1a), (1b), (1c) and (1d), as X, preferred hydrogen atom or halogen atom are more preferably hydrogen atom.
In above-mentioned formula (1a), i is preferred 2～10, and in above-mentioned formula (1b), j is preferred 3～10, and in above-mentioned formula (1c), m preferred 4～13.
As the compound of above-mentioned formula (1a) expression, can enumerate for example chain silane compound; As the compound of above-mentioned formula (1b) expression, can enumerate for example cyclic silane compound; As the compound of above-mentioned formula (1c) expression, can enumerate the silane compound that for example has spirane structure; And, for example can enumerate cage shape (basket-shope) silane compound etc. as the compound of above-mentioned formula (1d) expression. in the middle of these, preferred chain silane compound and cyclic silane compound are more preferably the cyclic silane compound.
As the object lesson of chain silane compound, can enumerate for example positive penta silane, isoamyl silane, neopentasilane, positive hexasilane, positive heptan silane, positive hot silane, positive ninth of the ten Heavenly Stems silane, silicon tetrachloride, silicon bromide, disilicone hexachloride, hexabromo disilane, eight chlorine trisilalkanes, eight bromine trisilalkanes etc.; As the cyclic silane compound, can enumerate and for example encircle trisilalkane, ring tetrasilane, ring penta silane, monosilane basic ring tetrasilane, monosilane basic ring trisilalkane, monosilane basic ring penta silane, hexamethylene silane, heptan silane, the hot silane of ring etc.; Silane compound as spirane structure, for example can enumerate 1,1 '-dicyclo tetrasilane, 1,1 '-dicyclo, penta silane, 1,1 '-dicyclo hexasilane, 1,1 '-dicyclo silane in heptan, 1,1 '-ring tetrasilane basic ring, penta silane, 1,1 '-ring tetrasilane basic ring hexasilane, 1,1 '-ring tetrasilane basic ring silane in heptan, 1,1 '-ring, penta silylation cyclohexasilanyl silane, 1,1 '-ring, penta silane basic ring silane in heptan, 1,1 '-cyclohexasilanyl ring silane in heptan, spiral shell [2.2] penta silane, spiral shell [3.3] silane in heptan, spiral shell [4.4] silane in the ninth of the ten Heavenly Stems, spiral shell [4.5] silane in the last of the ten Heavenly stems, spiral shell [4.6] 11 silane, spiral shell [5.5] 11 silane, spiral shell [5.6] 11 silane, spiral shell [6.6] 13 silane etc.; As cage shape silane compound, can enumerate for example hexasilaprismane, octasilacubane etc.
In these object lessons,, can enumerate ring penta silane, monosilane basic ring penta silane, ring tetrasilane, monosilane basic ring tetrasilane, ring trisilalkane, monosilane basic ring trisilalkane as particularly preferred object lesson.
Above-mentioned silicon compound can use separately, perhaps uses together more than 2 kinds or 2 kinds.
As long as the cobalt compound that contains in the composition of silicon-cobalt film that is used to form of the present invention can be realized purpose of the present invention, then no matter its kind.
Can preferably use in the dentate with dentate CO and π coordination the Co complex of any one at least.
As these Co complexes, for example can enumerate, the compound of the compound of the compound of the compound of the compound of following formula (2) expression, following formula (3) expression, following formula (4) expression, following formula (5) expression and following formula (6) expression, wherein, the compound of described formula (2) expression is:
L 1 cCo(CO) dY e ...(2)
Wherein, L 1Be to be selected from following formula (2)-1
(CH 3) nCp ...(2)-1
Wherein, Cp is η 5-cyclopentadienyl group, and n is 0～5 integer, the group of expression, indenyl or 1,3-cyclo-octadiene, 1,4-cyclo-octadiene, 1,5-cyclo-octadiene, 1, dentate in 3-butadiene, norbornadiene and the pi-allyl, Y is halogen atom, hydrogen atom, methyl or ethyl, c is 1 or 2, d is 0,1,2 or 4, e is 0 or 2, and c+d+e is 2,3,4 or 5, wherein, c is 2 o'clock, 2 L 1Can be the same or different;
The compound of described formula (3) expression is:
L 2 fCo 2(CO) gR h ...(3)
Wherein, L 2Definition identical with above-mentioned formula (2)-1 or for being selected from 1,3-cyclohexadiene, 1, the dentate in 4-cyclohexadiene, pi-allyl, norbornadiene and the cyclo-octene, R be halogen atom, PhC:::CPh (::: the expression triple bond), CCH 3, CH 3, CH 2, CH or CPh, f is 0,1,2 or 4, g is 1,2,4,6 or 8, h is 0,1 or 2, f+g+h is 4,6,7 or 8;
The compound of described formula (4) expression is:
Co 3(CO) 9CZ ...(4)
Wherein, Z is a halogen atom;
The compound of described formula (5) expression is:
Co 3(CO) 12 ...(5)
The compound of described formula (6) expression is:
Co 4(CO) 12 ...(6).
Complex as formula (2) expression, for example can enumerate, cyclopentadienyl group dicarbapentaborane cobalt, bifluoride cyclopentadienyl group carbonyl cobalt, dichloride cyclopentadienyl group carbonyl cobalt, dibrominated cyclopentadienyl group carbonyl cobalt, two iodate cyclopentadienyl group carbonyl cobalts, two (cyclopentadienyl group) cobalt, two (cyclopentadienyl group) carbonyl cobalt, two (cyclopentadienyl group) dicarbapentaborane cobalt, methyl cyclopentadienyl dicarbapentaborane cobalt, bifluoride methyl cyclopentadienyl carbonyl cobalt, dichloride methyl cyclopentadienyl carbonyl cobalt, dibrominated methyl cyclopentadienyl carbonyl cobalt, two iodate methyl cyclopentadienyl carbonyl cobalts, two (methyl cyclopentadienyl) cobalt, two (methyl cyclopentadienyl) carbonyl cobalt, two (methyl cyclopentadienyl) dicarbapentaborane cobalt, tetramethyl-ring pentadienyl dicarbapentaborane cobalt, bifluoride tetramethyl-ring pentadienyl carbonyl cobalt, dichloride tetramethyl-ring pentadienyl carbonyl cobalt, dibrominated tetramethyl-ring pentadienyl carbonyl cobalt, two iodate tetramethyl-ring pentadienyl carbonyl cobalts, two (tetramethyl-ring pentadienyl) cobalt, two (tetramethyl-ring pentadienyl) carbonyl cobalt, two (tetramethyl-ring pentadienyl) dicarbapentaborane cobalt, 1,5-cyclo-octadiene dicarbapentaborane cobalt, bifluoride 1,5-cyclo-octadiene carbonyl cobalt, dichloride 1,5-cyclo-octadiene carbonyl cobalt, dibrominated 1,5-cyclo-octadiene carbonyl cobalt, two iodate 1,5-cyclo-octadiene carbonyl cobalt, two (1, the 5-cyclo-octadiene) cobalt, two (1, the 5-cyclo-octadiene) carbonyl cobalt, 1,3-cyclo-octadiene dicarbapentaborane cobalt, bifluoride 1,3-cyclo-octadiene carbonyl cobalt, dichloride 1,3-cyclo-octadiene carbonyl cobalt, dibrominated 1,3-cyclo-octadiene carbonyl cobalt, two iodate 1,3-cyclo-octadiene carbonyl cobalt, two (1, the 3-cyclo-octadiene) cobalt, two (1, the 3-cyclo-octadiene) carbonyl cobalt, indenyl dicarbapentaborane cobalt, bifluoride indenyl carbonyl cobalt, dichloride indenyl carbonyl cobalt, dibrominated indenyl carbonyl cobalt, two iodate indenyl carbonyl cobalts, two (indenyl) cobalt, two (indenyl) carbonyl cobalt, η 3-pi-allyl three carbonyl cobalts, bifluoride η 3-pi-allyl carbonyl cobalt, dichloride η 3-pi-allyl carbonyl cobalt, dibrominated η 3-pi-allyl carbonyl cobalt, two iodate η 3-pi-allyl carbonyl cobalt, two (η 3-pi-allyl) carbonyl cobalt, cyclopentadienyl group (1, the 5-cyclo-octadiene) cobalt, cyclopentadienyl group (tetramethyl-ring pentadienyl) cobalt, tetramethyl-ring pentadienyl (1, the 5-cyclo-octadiene) cobalt, cyclopentadienyl group (methyl cyclopentadienyl) cobalt, methyl cyclopentadienyl (tetramethyl-ring pentadienyl) cobalt, methyl cyclopentadienyl (1, the 5-cyclo-octadiene) cobalt, cyclopentadienyl group (1, the 3-cyclo-octadiene) cobalt, tetramethyl-ring pentadienyl (1, the 3-cyclo-octadiene) cobalt, methyl cyclopentadienyl (1, the 3-cyclo-octadiene) cobalt, cyclopentadienyl group (cyclo-octatetraene base) cobalt, cyclopentadienyl group (1,3-butadiene) cobalt, cyclopentadienyl group (norbornadiene) cobalt, the hydrogenation cobalt tetracarbonyl, dihydro cyclopentadienyl group carbonyl cobalt, dihydro methyl cyclopentadienyl carbonyl cobalt, dihydro tetramethyl-ring pentadienyl carbonyl cobalt, the methyl cobalt tetracarbonyl, the ethyl cobalt tetracarbonyl.
In addition, complex as above-mentioned formula (3) expression, for example can enumerate two (cyclopentadienyl group) dicarbapentaborane cobalt, two (tetramethyl-ring pentadienyl) dicarbapentaborane two cobalts, cobalt octacarbonyl, (norborene) six carbonyls two cobalts, cyclo-octene six carbonyls two cobalts, two (cyclopentadienyl group) dimethyl dicarbapentaborane two cobalts, two iodate, four (η 3-pi-allyl) two cobalts, two (1, the 3-cyclohexadienyl) four carbonyls, two cobalts, two (norborene) four carbonyls two cobalts, two (cyclopentadienyl group) dicarbapentaborane two cobalts and use following formula (i)～(v) Biao Shi complex respectively.
Figure C20048003049400091
As the complex of above-mentioned formula (4) expression, can enumerate for example following formula (vi) Biao Shi complex.
In the middle of these compounds, preferred complex is two (cyclopentadienyl group) cobalts, two (Fourth Ring pentadienyl) cobalt, two (1, the 3-cyclo-octadiene) cobalt, two (1, the 5-cyclo-octadiene) cobalt, two (indenyl) cobalt, cyclopentadienyl group dicarbapentaborane cobalt, methyl cyclopentadienyl dicarbapentaborane cobalt, tetramethyl-ring pentadienyl dicarbapentaborane cobalt, (1, the 3-cyclo-octadiene) dicarbapentaborane cobalt, (1, the 5-cyclo-octadiene) dicarbapentaborane cobalt, indenyl dicarbapentaborane cobalt, η 3-pi-allyl three carbonyl cobalts, cyclopentadienyl group (1, the 3-cyclo-octadiene) cobalt, cyclopentadienyl group (1, the 5-cyclo-octadiene) cobalt, cyclopentadienyl group (indenyl) cobalt, indenyl (1, the 3-cyclo-octadiene) cobalt, indenyl (1, the 5-cyclo-octadiene) cobalt, cobalt octacarbonyl.
These cobalt compounds can use separately, perhaps use together more than 2 kinds or 2 kinds.
In the composition that is used to form silicon-cobalt film of the present invention, as described later, the ratio of above-mentioned silicon compound and cobalt compound can suitably be set according to the purposes of purpose silicon-cobalt film.
Except above-mentioned silicon compound and cobalt compound, optionally, the silicon-composition of cobalt film that is used to form of the present invention can also contain other composition.
As other such composition, for example can enumerate metal or semiconductor particle, metal oxide particle, surfactant etc.
In order to regulate the electrical characteristics of resulting silicon-cobalt film, can contain above-mentioned metal or semiconductor particle.As its object lesson, for example can enumerate, gold, silver, copper, aluminium, nickel, iron, niobium, titanium, silicon, indium and tin. these can contain one or more. as the particle diameter of metal or semiconductor particle, preference as 10～1000nm about. as the shape of particle, except almost spherical, can also be shape arbitrarily such as discoid, cylindric, prism-shaped (polyangularcolumnar), flakey. as the content of metal or semiconductor particle, with respect to the total amount (C of above-mentioned silicon compound and cobalt compound and metal or semiconductor particle 1), the following (C of preferred 50 weight % or 50 weight % 1≤ 50 weight %), be more preferably the following (C of 10 weight % or 10 weight % 1≤ 10 weight %).
The composition that is used to form silicon-cobalt film of the present invention can contain surfactant, is used to improve surface smoothing that wetability for the matrix of said composition to be coated, improvement film, preventing to film spot occurs or produce tangerine peel.
As such surfactant, for example can enumerate fluorine class surfactant, polysiloxane-based surfactant, nonionic surface active agent etc.
As above-mentioned fluorine class surfactant, for example can enumerate EFTOP EF301, EF303, EF352 (above material changes into (strain) by new autumn fields and makes); MEGAFAC F171, F173 (above material is made by big Japanese ink (strain)); ASAHIGUARD AG710 (Asahi Glass (strain) manufacturing); FLORAD FC-170C, FC430, FC431 (above material is made by Sumitomo 3M (strain)); SURFLON S-382, SC101, SC102, SC103, SC104, SC105, SC106 (above material is made by Asahi Glass (strain)); BM-1000, BM-1100 (above material is made by B.M-Chemie company), Schseg0-Flour (manufacturing of Schwegmann company) etc.
As above-mentioned nonionic surface active agent, for example can enumerate, EMULGEN105,430,810,920, RHEODOL SP-40S, TW-L120, EMANOL3199,4110, EXEL P-40S, BRIDGE30,52,72,92, ARACEL20, EMASOL320, polysorbas20,60, MARGE45 (above material is made by (strain) flower king), NONIBOL55 (Sanyo changes into (strain) and makes), CHEMISTAT2500 (Sanyo changes into industry (strain) manufacturing), SN-EX9228 (SAN NOPCO (strain) manufacturing), NONAL530 (eastern nation chemical industry (strain) manufacturing) etc.
In the composition that is used to form silicon-cobalt film of the present invention, the content (C of these surfactants 2), with respect to whole compositions (when composition of the present invention contains the aftermentioned solvent, also comprising solvent), the following (C of preferred 5 weight % or 5 weight % 2≤ 5 weight %), be more preferably the following (C of 0.1 weight % or 0.1 weight % 2≤ 0.1 weight %).
The composition that is used to form silicon-cobalt film of the present invention preferably also contains solvent, uses with solution shape or suspended state.
At this, as operable solvent, as long as other composition that can dissolve or disperse above-mentioned silicon compound and above-mentioned cobalt compound and contain arbitrarily, and described solvent be not with their the reaction material, then be not particularly limited. as such solvent, can enumerate for example varsol and the preferred solvent of ether solvent conduct.
As varsol, object lesson can be enumerated pentane, pentamethylene, n-hexane, cyclohexane, normal heptane, cycloheptane, normal octane, cyclooctane, decane, cyclodecane, dicyclopentadiene hydrogenated thing, benzene,toluene,xylene, durol, indenes, tetrahydronaphthalene, decahydronaphthalenes, isotriacontane; As ether solvent, can enumerate ether, propyl ether, butyl ether, glycol dimethyl ether, ethylene glycol diethyl ether, Ethylene Glycol Methyl ethylether, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, diethylene glycol methyl ethyl ether, oxolane, oxinane, Dui diox.These solvents (a kind) (a=1) separately use, and the mixture that perhaps also can be used as (a 〉=2) more than 2 kinds or 2 kinds uses.
Among these solvents,, preferably use the mixture of varsol or varsol and ether solvent from the stable aspect of the dissolubility of above-mentioned silicon compound and cobalt compound and the composition that obtains.
When the composition that is used to form silicon-cobalt film of the present invention contains solvent, the use amount of solvent is, the amount of solid constituent in the composition (removing the amount of desolvating from total composition) preferably reaches 0.1～50 weight % of total composition, is more preferably the amount that reaches 1～30 weight %.
The composition of silicon-cobalt film that is used to form of the present invention is before being applied to matrix, can carry out rayed in advance, the molecular weight of silicon compound is increased, thereby improve the coating of composition. with silicon compound with before cobalt compound mixes, in advance silicon compound is carried out rayed separately and also can obtain same effect. as the light of irradiation, except visible light, ultraviolet ray, beyond the far ultraviolet, can also use low pressure or high-pressure mercury-vapor lamp, deuterium lamp or argon, krypton, the discharging light of rare gas such as xenon, YAG laser, argon laser, carbon dioxide laser, XeF, XeCl, XeBr, KrF, KrCl, ArF, excimer lasers such as ArCl etc. as these light sources, preferred use power is the light source of 10～5000W. and the power of common 100～1000W is just enough. and the wavelength of these light sources is so long as the wavelength how many raw silicon hydride compounds can absorb, then be not particularly limited, but preferred 170nm～600nm.
Temperature (T when carrying out photo-irradiation treatment 1) preferred room temperature～300 ℃ or following (T 1≤ 300 ℃). the processing time is about 0.1～30 minute.Photo-irradiation treatment is preferably carried out in non-oxidizable atmosphere gas.
Form the method for silicon-cobalt film
The composition that is used to form silicon-cobalt film of the present invention that obtains like this is applied to and forms filming of composition on the matrix.The material of matrix, shapes etc. are not particularly limited, but when in subsequent step, heat-treating, basic material preferably can tolerate the material of this treatment temperature. in addition, the matrix that formation is filmed can be that smooth surface also can be the non-smooth surface with difference in height, its form is not particularly limited. as the material of these matrixes, can enumerate for example glass, metal, plastics, pottery etc. as glass, can use for example quartz glass, pyrex, soda-lime glass, lead glass. as metal, except gold, silver, copper, nickel, silicon, aluminium, outside the iron, can also use stainless steel. as plastics, can enumerate for example polyimides, polyether sulfone etc. in addition, their material shape can be bulk, tabular, film shape etc. are not particularly limited.
The coating process of above-mentioned composition is not particularly limited, and can be that spin-coating method, dip coating, curtain are coated with method, rolling method, spraying process, ink-jet method, print process etc. and coating can be carried out for 1 time, also can repeatedly overlapping coating.
The thickness of filming can be the suitable value of setting according to the purposes of formed silicon-cobalt film. for example, when being used for semiconductor applications, coating thickness can be preferably set to 10～100nm, be more preferably 20～60nm, in addition, when being used for conducting wiring, thickness can be preferably set to 100～5000nm, is more preferably 500～3000nm.
In addition, when the composition that is used to form silicon-cobalt film contained solvent, above-mentioned thickness was construed as the thickness that removes after desolvating.
The substrate that the present invention uses can also use as the substrate that has hydrophobic parts and hydrophilic parts on same substrate.Thus, also can only film in the specific part formation of substrate.
Having on the same substrate that the present invention uses can be by following method formation with the corresponding part of hydrophobic parts in the substrate of hydrophobic parts and hydrophilic parts, for example, to contain hexa methyl silazane, the solution of above-mentioned fluorine class surfactant etc. only is coated on and the corresponding part of hydrophobic parts, under 100～500 ℃, carry out heat treated then. in order only to contain hexa methyl silazane at counterpart, the solution coat of above-mentioned fluorine class surfactant etc. is to corresponding hydrophobic parts, after in advance the whole surface treatment of substrate being become hydrophily described later, essential hydrophilic parts is covered, hydrophobic parts with correspondence is processed into hydrophobicity then. and the method that covers this hydrophilic parts is not particularly limited, can use for example following method: form pattern by known photoetching process, cover the method for hydrophobic parts part in addition then with known resist; Or after using the mask band to cover hydrophobic parts part in addition, on the part that will form hydrophobic parts, form filming of the present composition, then, method of used resist or mask band being peeled off by known method etc. in addition, after also can the whole face of substrate being processed into hydrophobicity, again specific part being carried out hydrophily and handle with above-mentioned same method.
Then, by carrying out heat and/or optical processing is transformed into silicon-cobalt film as filming of the above-mentioned composition that is used to form silicon-cobalt film of the present invention that obtains.
For above-mentioned heat treatment, its temperature (T 2) be preferably set to (T more than 100 ℃ or 100 ℃ 2〉=100 ℃), be more preferably and be set at 150 ℃～500 ℃. be about 30 seconds to 120 minutes heating time.In addition, if at oxygen-free as far as possible and there is sintering in the atmosphere gas of hydrogen, then can obtain filming of good quality, therefore, the preferred oxygen-free and have the atmosphere gas of hydrogen as far as possible of the atmosphere gas during heat treatment. the hydrogen of above-mentioned heat treated atmosphere gas also can mix as mist with for example nitrogen, helium, argon etc. and uses.
In addition, can also carry out rayed to filming of the composition that is used to form silicon-cobalt film and form silicon-cobalt film. optical processing for example can be used, excimer lasers such as the discharging light of rare gas such as low pressure or high-pressure mercury-vapor lamp, deuterium lamp or argon, krypton, xenon, YAG laser, argon laser, carbon dioxide gas volumetric laser, XeF, XeCl, XeBr, KrF, KrCl, ArF, ArCl etc. are as light source. as these light sources, general use power is the light source of 10～5000W, but common 100～1000W is just enough.The wavelength of these light sources is not particularly limited, and is generally 170nm～600nm.In addition, from the quality aspect of silicon-cobalt film of forming, especially preferably use laser. the temperature during these rayed is generally room temperature～200 ℃. in addition, when rayed,, also can shine by mask in order only to shine privileged site.
Silicon-cobalt film
Show metallicity as the above-mentioned silicon that obtains-cobalt film, can set suitable film thickness according to its purposes. for example, when being used for semiconductor applications, thickness can be preferably set to 5～1000nm, be more preferably and be set at 30～500nm, in addition, when using as the conducting film that is used to connect up, thickness can be preferably set to 50～5000nm, is more preferably to be set at 100～3000nm.
Have the Co/Si atomic ratio of the atomic ratio that reflects the Co/Si in the composition that is used to form silicon-cobalt film as the above-mentioned silicon of the present invention-cobalt film that obtains, and show electrical characteristics corresponding to this ratio.For example, be set at about 0.1～10 by atomic ratio, can obtain showing the silicon-cobalt film of any conductivity Co/Si. for example, engage for fear of in semiconductor device, forming ohm, when silicon surface forms silicon-cobalt film, the Co/Si atomic ratio can be set at about 0.5.
Silicon of the present invention-cobalt film goes for comprising the circuit of the multiple electronic instrument of semiconductor.
Embodiment
Below, narrate the present invention in further detail by embodiment.
Embodiment 1
In nitrogen atmosphere gas, mix 2.0g and encircle 20% toluene solution of penta silane and 20% toluene solution of 1.2g cyclopentadienyl group dicarbapentaborane cobalt, and use high-pressure mercury-vapor lamp this mixed solution irradiation ultraviolet radiation (365nm, 50mW/cm 2) 10 minutes, use the polytetrafluoroethylene (PTFE) filter filtering solution of aperture 0.1 μ m then, prepare coating fluid. this coating fluid is spin-coated on the quartz substrate with 1000rpm, and under 100 ℃, heated 5 minutes, further 400 ℃ of following heat treated 30 minutes, thus, obtain having the film of metallic luster.Recording its thickness with α step (manufacturing of Tenchor company) is that 150nm. carries out esca analysis with this film, only detects Co and Si, and its strength ratio is 1: 2.This ESCA collection of illustrative plates is shown in Fig. 1. and in addition, the resistivity of measuring this film with 4 terminal methods is 21 μ Ω cm.
Embodiment 2
Except the cyclopentadienyl group dicarbapentaborane cobalt that uses two (cyclopentadienyl group) cobalts replacement of 1.3g embodiment 1, prepare coating fluid with similarly to Example 1 mode. with infusion process this coating fluid is coated on the quartz substrate. after carrying out 10 minutes preliminary drying on 100 ℃ the hot plate, further under 500 ℃, carry out heat treated, obtain the film of thickness 3.2 μ m with metallic luster. in the esca analysis of this film, only detect Co and Si, its strength ratio is 1: 2. in addition, the resistivity that records this film with 4 terminal methods is 32 μ Ω cm.
Embodiment 3
The solvent toluene that embodiment 1 is used changes detergent alkylate into, other are identical with embodiment 1, prepare coating fluid. be applied to this coating fluid on the quartz substrate and form the linearity pattern with spraying process, then on hot plate in 400 ℃ of heat treated 1 hour, form the straight-line pattern of the thickness 0.2 μ m with metallic luster. the sheet resistance of this material is 160 Ω/.
Embodiment 4
Except the cyclopentadienyl group dicarbapentaborane cobalt that uses 1.6g cobalt octacarbonyl replacement embodiment 1, applicating adn implementing example 1 same method prepares coating fluid. with the PTFE filter filtering solution of aperture 0.1 μ m, prepare coating fluid. this coating fluid is spin-coated on the quartz substrate with 1000rpm, and under 100 ℃, heated 5 minutes, further 400 ℃ of following heat treated 30 minutes, thus, obtain having the film of metallic luster. in the esca analysis of this film, only detect Co and Si, its strength ratio is 1: 2. in addition, the resistivity that records this film with 4 terminal methods is 27 μ Ω cm.
Embodiment 5
In nitrogen atmosphere gas, use high-pressure mercury-vapor lamp to encircling penta silane irradiation ultraviolet radiation (365nm, 50mW/cm 2) after 5 minutes, prepare the solution of 20% toluene. 20% toluene solution of this solution of 2.0g and 1.2g cyclopentadienyl group dicarbapentaborane cobalt is mixed, and filter the solution that mixes with the PTFE filter of aperture 0.1 μ m, prepare coating fluid. this coating fluid is spin-coated on the quartz substrate with 1000rpm, and under 100 ℃, heated 5 minutes, further 400 ℃ of following heat treated 30 minutes, thus, the thickness that obtains having metallic luster is the film of 150nm.During this film of esca analysis, only detect Co and Si, its strength ratio is 1: 2.In addition, the resistivity that records this film with 4 terminal methods is 18 μ Ω cm.
Embodiment 6
In nitrogen atmosphere gas, use high-pressure mercury-vapor lamp to encircling penta silane irradiation ultraviolet radiation (365nm, 50mW/cm 2) after 5 minutes, prepare the solution of 20% toluene.20% toluene solution of this solution of 2.0g and 1.2g cyclopentadienyl group dicarbapentaborane cobalt is mixed, and filter the solution that mixes with the PTFE filter of aperture 0.1 μ m, prepare coating fluid. this coating fluid is spin-coated on the quartz substrate with 1000rpm, and under 100 ℃, heated 5 minutes, further 400 ℃ of following heat treated 30 minutes, thus, obtain having the film of metallic luster. the coating fluid that on this film, has filtered again with same condition spin coating, and heat, can obtain the film of thickness 290nm.During this film of esca analysis, only detect Co and Si, its strength ratio is 1: 2. in addition, the resistivity that records this film with 4 terminal methods is 42 μ Ω cm.
As mentioned above, according to the present invention, a kind of composition that is used for forming easily silicon-cobalt film can be provided, said composition does not need the vacuum plant or the high frequency generating apparatus of high price, and low cost of manufacture, also provide use said composition form silicon-cobalt film method and the silicon-cobalt film that forms by this method.According to silicon-cobalt film that method of the present invention forms, can at random control its electrical characteristics to the conductivity field at semiconductor applications, go for solar cell or various circuit.

Claims (4)

1. a composition that is used to form silicon one cobalt film is characterized in that, contains silicon compound and cobalt compound, wherein above-mentioned silicon compound be selected from following (1a)～(1d) expression compound at least a kind,
Si iX 2i+2 (1a)
Wherein, X is the organic group of hydrogen atom, halogen atom or monovalence, and i is the integer more than 2 or 2;
Si jX 2j (1b)
Wherein, X is the organic group of hydrogen atom, halogen atom or monovalence, and j is the integer more than 3 or 3;
Si mX 2m-2 (1c)
Wherein, X is the organic group of hydrogen atom, halogen atom or monovalence, and m is the integer more than 4 or 4;
Si kX k (1d)
Wherein, X is the organic group of hydrogen atom, halogen atom or monovalence, and k is 6 or 8 or 10.
2. the described composition that is used to form silicon one cobalt film of claim 1, wherein above-mentioned cobalt compound are to have in CO dentate and the π dentate cobalt complex of any one at least.
3. method that forms silicon-cobalt film is included in and forms filming of claim 1 or the 2 described compositions that are used to form silicon-cobalt film on the matrix, then this film is carried out heat and/or optical processing.
4. silicon-cobalt the film that forms according to the method for claim 3.
CNB2004800304942A 2003-10-16 2004-10-06 Composition for forming silicon-cobalt film, silicon-cobalt film, and forming method therefor Expired - Fee Related CN100423199C (en)

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JP5445795B2 (en) * 2009-12-25 2014-03-19 独立行政法人科学技術振興機構 Method for forming crystalline cobalt silicide film
KR20130069611A (en) * 2010-04-06 2013-06-26 엔디에스유 리서치 파운데이션 Liquid silane-based compositions and methods for producing silicon-based materials
WO2014052316A1 (en) * 2012-09-25 2014-04-03 Advanced Technology Materials, Inc. Cobalt precursors for low temperature ald or cvd of cobalt-based thin films
KR102275419B1 (en) * 2016-11-23 2021-07-09 엔테그리스, 아이엔씨. Haloalkynyl Dicobalt Hexacarbonyl Precursor for Chemical Deposition of Cobalt
US20190309422A1 (en) * 2018-04-06 2019-10-10 Versum Materials Us, Llc Spin-On Metallization
CN109338285B (en) * 2018-11-06 2020-10-02 四川理工学院 Method for forming Si-Co composite infiltration gradient coating on titanium alloy surface

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5360171A (en) * 1976-11-10 1978-05-30 Matsushita Electric Ind Co Ltd Electrode for silicon substrate and its production
CN85101821A (en) * 1984-03-13 1987-01-10 斯瓦罗夫斯基公司 The method for preparing silane
CN1098556A (en) * 1993-02-15 1995-02-08 株式会社半导体能源研究所 Semiconductor and manufacture method thereof
CN1341277A (en) * 1999-12-24 2002-03-20 株式会社荏原制作所 Apparatus for plating semiconductor substrate, method for plating semiconductor substrate
US6506321B1 (en) * 1997-10-24 2003-01-14 Sumitomo Special Metals Co., Ltd. Silicon based conductive material and process for production thereof

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH656401A5 (en) * 1983-07-21 1986-06-30 Suisse Horlogerie Rech Lab METHOD FOR ELECTRICALLY DEPOSITING METALS.
JP2980645B2 (en) 1990-06-18 1999-11-22 株式会社東芝 Metal thin film forming method
JPH0453512A (en) * 1990-06-21 1992-02-21 Toyoda Gosei Co Ltd Handle of pot
US5700400A (en) * 1993-06-15 1997-12-23 Nippon Oil Co., Ltd. Method for producing a semiconducting material
JP3382743B2 (en) 1995-01-27 2003-03-04 株式会社リコー Method for manufacturing semiconductor device
US6251777B1 (en) * 1999-03-05 2001-06-26 Taiwan Semiconductor Manufacturing Company Thermal annealing method for forming metal silicide layer
DE60036449T2 (en) 1999-03-30 2008-06-19 Seiko Epson Corp. METHOD FOR HOLDING A THIN-FILTER EFFECT TRANSISTOR
JP2002083974A (en) * 2000-06-19 2002-03-22 Semiconductor Energy Lab Co Ltd Semiconductor device
JP2002118078A (en) * 2000-10-12 2002-04-19 Toshiba Corp Method of manufacturing semiconductor device, and semiconductor device
TWI284348B (en) * 2002-07-01 2007-07-21 Macronix Int Co Ltd Method for fabricating raised source/drain of semiconductor device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5360171A (en) * 1976-11-10 1978-05-30 Matsushita Electric Ind Co Ltd Electrode for silicon substrate and its production
CN85101821A (en) * 1984-03-13 1987-01-10 斯瓦罗夫斯基公司 The method for preparing silane
CN1098556A (en) * 1993-02-15 1995-02-08 株式会社半导体能源研究所 Semiconductor and manufacture method thereof
US6506321B1 (en) * 1997-10-24 2003-01-14 Sumitomo Special Metals Co., Ltd. Silicon based conductive material and process for production thereof
CN1341277A (en) * 1999-12-24 2002-03-20 株式会社荏原制作所 Apparatus for plating semiconductor substrate, method for plating semiconductor substrate

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