CN100421270C - Light emitting element and manufacturing method thereof - Google Patents
Light emitting element and manufacturing method thereof Download PDFInfo
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- CN100421270C CN100421270C CNB2005100536128A CN200510053612A CN100421270C CN 100421270 C CN100421270 C CN 100421270C CN B2005100536128 A CNB2005100536128 A CN B2005100536128A CN 200510053612 A CN200510053612 A CN 200510053612A CN 100421270 C CN100421270 C CN 100421270C
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Abstract
The invention provides a light emitting element which has a structure where a conductive substrate for reinforcement is stuck to a light emitting layer part through a metal layer for reflection, whose manufacturing is easy and which can sufficiently maintain a reflection factor of a reflection face that the metal layer forms. The light emitting element has a compound semiconductor layer having the light emitting layer part and a current diffusion layer formed on the first main surface of the light emitting layer part. The second main surface of the compound semiconductor layer is connected to the first main surface of a Si substrate forming a conductive element substrate through a reflection metal layer. The reflection metal layer is formed of a metal which is mainly composed of Au, Ag or Al. The reflection metal layer and the Si substrate are stuck trough a conductive adhesive layer 11 where metal particles which are mainly composed of Au, Al, Cu or Ni or conductive particles formed of carbon black and the like are bonded with high molecular bonding material composed of an epoxy polymeric material. an urethane polymeric material and an acrylic polymeric material.
Description
Technical field
The present invention system is about light-emitting component and manufacture method thereof.
Background technology
For making light-emitting component high brightnessization such as light-emitting diode or semiconductor laser, it is very important taking out efficient by the light of element.Therefore, disclose following technology in non-patent literature 1, promptly removing the GaAs substrate of growing up with substrate in luminescent layer portion, on the other hand, the conductive board that reinforcement is used fits in this by reflection with metal level and removes face.
Non-patent literature 1: 124 pages～132 pages of Nikkei electron October 21 days numbers in 2002.
Summary of the invention
The mode that said method adopts is that the both sides at luminescent layer portion one side and conductive board all form the Au layer, and this Au layer is fitted each other, but it has following shortcoming:
(1) owing to forming 2 Au layers, so take a lot of work.
(2) if the thickness inequality of the Au layer that forms, luminescent layer portion uneven thickness or generation curved substrate etc. then can't obtain uniform fit-state, and reduce the rate of finished products that is made element wafer by the cutting of bonded wafer.
(3) for firmly fitting the Au layer each other, the heat treatment that the Au layer is fitted tightly each other.When this heat treatment, the branch that becomes that is formed at the contact layer (joint alloying layer) between luminescent layer portion and reflector (being the Al layer in the non-patent literature) diffuses in the reflection aspect, and reflectivity is reduced.
Problem of the present invention provides a kind of light-emitting component and manufacture method thereof, this light-emitting component has by with Au, Ag or Al being the structure that conductive board that the reflection of principal component is used reinforcement with metal level fits in luminescent layer portion, and, be easy to make, and also can keep the reflectivity of the reflecting surface of metal level formation well.
For solving above-mentioned problem, light-emitting component of the present invention is characterised in that:
First first type surface with compound semiconductor layer with luminescent layer portion takes out face as light, at second first type surface of above-claimed cpd semiconductor layer by being that the reflective metal layer of principal component combines with the device substrate of conductivity with Au, Ag or Al, and, above-mentioned reflective metal layer and said elements substrate, be to close by the conductivity adhesion material laminating that electroconductive particle is combined the material combination with macromolecule
Between above-mentioned reflective metal layer and above-claimed cpd semiconductor layer, the contact resistance that is formed with dispersion lowers the joint alloying layer of usefulness,
Above-mentioned macromolecule is in conjunction with material, is that temperature when being lower than the alloying heat treatment of above-mentioned joint alloying layer is carried out heat hardening and handled and form,
And above-mentioned macromolecule is in conjunction with material, is to be that macromolecular material, carbamic acid are that arbitrary institute of macromolecular material, acrylic acid series macromolecular material constitutes by being selected from epoxy.
In addition, in the manufacture method of light-emitting component of the present invention, forming with Au, Ag or Al in second main surface side of taking out face with first first type surface as light and having a compound semiconductor layer of luminescent layer portion is the reflective metal layer of principal component, with first first type surface of conductive element substrate and second first type surface of above-mentioned reflective metal layer, close by the conductivity adhesion material laminating that electroconductive particle is combined the material combination with macromolecule, make adhesive substrates thus, and above-mentioned adhesive substrates cut into element wafer, it is characterized in that:
The above-mentioned macromolecule of above-mentioned conductivity adhesion material layer is to form with heat hardening type macromolecular material in conjunction with material, unhardened conductivity adhesion material layer is disposed between second first type surface of first first type surface of said elements substrate and above-mentioned reflective metal layer and makes it superimposed, handle and above-mentioned conductivity adhesion material layer is carried out heat hardening with above-mentioned state, and fit, and board with pliability with unhardened conductivity adhesion material formation, be attached at the arbitrary of above-mentioned reflective metal layer or said elements substrate, form above-mentioned conductivity adhesion material layer thus.
Light-emitting component and manufacture method thereof according to the invention described above, owing to form reflective metal layer in the compound semiconductor layer side that contains luminescent layer portion, and it is seen through conductivity adhesion material layer fit in the device substrate side, so must not form unnecessary metal level in order to fit in the device substrate side, can reduce the workload that metal level forms and make easily as non-patent literature 1.
In addition, because the pliability of conductivity adhesion material layer is good, even, also both homogeneous and high strength ground can be fitted, and promote rate of finished products by the obtained element wafer of cutting adhesive substrates so a little concavo-convex or bending etc. takes place for conductivity adhesion material layer side or device substrate side.If particularly conductivity adhesion material layer is formed by the heat hardening macromolecular material, the pliability of unhardened conductivity adhesion material layer is good especially, absorbs concavo-convex and bending etc. easily, so respond well.At this moment, between second first type surface of first first type surface of device substrate and reflective metal layer, but the unhardened conductivity adhesion of overlay configuration material layer is handled by heat hardening at this state and to be fitted.
More specifically, the solder flux that constitutes with unhardened conductivity adhesion material can be coated one of reflective metal layer or device substrate, form conductivity adhesion material layer thus.The solder flux of conductivity adhesion material has and fills advantage concavo-convex and that bending effect is good.On the other hand, also the board with pliability that constitutes with unhardened conductivity adhesion material can be attached on reflective metal layer or device substrate arbitrary, form conductivity adhesion material layer thus.The thickness of preformed tabular conductivity adhesion material is homogeneous very, thus can not produce the situation of solder flux crawling, and obtain the fit-state of homogeneous easily.
In the light-emitting component of the present invention, can between reflective metal layer and compound semiconductor layer, form the joint alloying layer that the contact resistance that disperses lowers usefulness.Thus, but the metallic reflector double as be device substrate, and luminescent layer portion applied the electrode that voltage is used.Again, second first type surface at compound semiconductor layer forms the metal level that the contact resistance that disperses lowers usefulness, and carry out alloying heat treatment and make metal level form engage alloying layer, and after alloying heat treatment, carry out the heat hardening of conductivity adhesion material layer and handle (promptly to be lower than the heat treated temperature of alloying, macromolecule is to carry out the heat hardening processing to be lower than the alloying heat treatment temperature that engages alloying layer in conjunction with material).
The macromolecule of conductivity adhesion material layer is in conjunction with material, and 1 liquid type and 2 liquid types all can use.1 liquid type carries out high molecular sclerosis by solvent evaporation, for example, can use the acrylic acid series material.The occasion of 1 liquid type is carried out layer when forming with coating, and the conductivity solvent that material need add a great deal of of adhering forms the coating shape, and the bubble that is produced when having because of solvent evaporation causes peeling off of compound semiconductor layer or produce problem such as slight crack.On the other hand, 2 liquid types are with the mixing of host and the curing agent beginning as sclerosis, so (curing) temperature of hardening can be set at arbitrarily within the scope that is higher than room temperature to 180 ℃, and only need a small amount of solvent.And be processed into tabular easily.It is that macromolecular material and carbamic acid are macromolecular material that representational 2 liquid types have epoxy.Particularly if adopting epoxy is macromolecular material, then adherence is good, and again, even also can be rapidly and carry out cure process fully with the low temperature till 160 ℃, moreover the adjustment of hardening temperature also be easy to, so be suitable for the present invention.And epoxy is that macromolecular material also has the advantage that is processed into unhardened plate easily.
No matter use 1 liquid type or 2 liquid types, the heat hardening treatment temperature of conductivity adhesion material layer can be controlled in far below the alloying heat treated temperature of general need above 300 ℃.Its result when the heat hardening of conductivity adhesion material layer is handled, can effectively suppress to be formed at compound semiconductor layer and the composition that engages alloying layer between the reflector and be diffused in the reflecting surface and reflectivity is reduced.At this moment, after the Alloying Treatment, mode with second first type surface (dispersion is formed with and engages alloying layer) that covers compound semiconductor layer forms reflective metal layer, and as long as by after the heat hardening processing of the conductivity adhesion material layer that carries out, the composition that engages alloying layer in the time of also can preventing alloying heat treatment is diffused in the reflecting surface, has better effect.
As electroconductive particle, can adopt Ag is that metallic, Al are that metallic, Cu are that metallic or Ni are metallic etc., if consider conductivity and the performance of non-oxidizability and the balance of price, is that metallic is the best with Ag then.In addition, also can adopt nonmetallic conducting particless such as carbon black.
As device substrate, though also can adopt and in the past the identical Si substrate of light-emitting component, if constitute with metal substrate, then this device substrate can possess heat radiation (heatsink) and acts on, and when light-emitting component drives, can promote the heat radiation of element, so can prolong the life-span of element.The first type surface of metal substrate is compared with the Si substrate and is difficult for planarization, but adopts the present invention, and material layer absorbable metal substrate-side is concavo-convex and crooked because conductivity is adhered, thus do not worry above-mentioned unfavorable condition, and can effectively give light-emitting component heat radiation function.
Description of drawings
Fig. 1 is the schematic cross-section that shows first example of light-emitting component of the present invention.
Fig. 2 is the specification figure of light-emitting component.
Fig. 3 is the key diagram of hookup 2.
Fig. 4 is the key diagram of hookup 3.
Fig. 5 is to show the first method schematic diagram that forms conductivity adhesion material layer.
Fig. 6 is to show the second method schematic diagram that forms conductivity adhesion material layer.
Fig. 7 is the schematic cross-section that shows first example of light-emitting component of the present invention.
The main symbol description of accompanying drawing
100,200 light-emitting components
4 n type coating layers
5 active layers
6 p type coating layers
7 Si substrates (device substrate)
9 light take out lateral electrode
9a light takes out the side engagement alloying layer
10 metallic reflectors
11 conductivity adhesion material layer
15 backplates
16,32 substrate-side engage alloying layer
20 current-diffusion layers
24 luminescent layer portions
31 engage alloying layer (backplate portion)
50 compound semiconductor layers
107 metal substrates (device substrate)
Embodiment
Below, with reference to institute's accompanying drawing explanation embodiments of the invention.
Fig. 1 is an embodiment who shows light-emitting component of the present invention.This light-emitting component 100 possesses compound semiconductor layer 50, and this compound semiconductor layer 50 has luminescent layer portion 24 and is formed at current-diffusion layer 20 on first first type surface of this luminescent layer portion 24.Second first type surface of this compound semiconductor layer 50 passes through reflective metal layer 10 combinations on first first type surface of the Si substrate 7 that constitutes the conductive element substrate.Reflective metal layer 10 is made of the arbitrary metal as principal component (particularly, the containing ratio with above-mentioned principal component element is that the above person of 95 quality % is by good) with Au, Ag or Al.
Light-emitting component 100 is by taking out lateral electrode 9 and 15 energisings of backplate at light, and makes luminescent layer portion 24 light emitting drive.From the light of this luminescent layer portion 24, be with direct beam from the face side to light that take out, take out with the overlapping mode of the folded light beam of reflective metal layer reflection.
Below, the concrete example of the manufacture method of above-mentioned light-emitting component 100 is described.
At first, shown in the operation 1 of Fig. 2, constituting on the first type surface of growth with the GaAs monocrystal substrate 1 of substrate peel ply 3 (for example, the 0.5 μ m) building crystal to grow that n type GaAs resilient coating 2 (for example, 0.5 μ m), AlAs are constituted.Afterwards, as luminescent layer portion 24, make n type coating layer 4 (thickness for example is 1 μ m), active layer (non-impurity-doped) 5 (thickness for example is 0.6 μ m) successively, reach p type coating layer 6 (thickness for example is 1 μ m) building crystal to grow.The gross thickness 2.6 μ m of luminescent layer portion 24.Again, current-diffusion layer 20 (for example 5 μ m) building crystal to grow that p type AlGaAs is constituted.The building crystal to grow of above-mentioned each layer is to carry out with known MOVPE (Metal-Organic VaporPhase Epitaxy, the organic metal gas phase is of heap of stone brilliant) method.
Thus, on GaAs monocrystal substrate 1, form the compound semiconductor layer 50 that is constituted by luminescent layer portion 24 and current-diffusion layer 20.The thickness of this compound semiconductor layer 50 is 7.6 μ m, when removing the GaAs monocrystal substrate, in fact it can not be handled individually and does not make its damage.At first first type surface of compound semiconductor layer 50, the metal level 9a ' that will constitute by AuBe alloy etc. in this stage, take out face lateral electrode 9 with the light that covers it and form patterning again.Can proceed afterwards light take out side alloying heat treatment and make metal level 9a ' (below, " ' arranged on the symbol " be meant heat treatment before) form light and take out side engagement alloying layer 9a, but be that light is taken out the heat treatment of side alloying in the present embodiment, double as is the alloying heat treatment when forming luminescent layer portion side engagement alloying layer 31.
Then, shown in operation 2, first first type surface at compound semiconductor layer 50, macromolecular material binder course 111 is coated with and forms with the form that covers light taking-up face lateral electrode 9, shown in operation 3, make macromolecular material binder course 111 with thermoplastic state, interim supporting substrate 110 overlapping driving fits with other preparation, cooling afterwards makes this macromolecular material binder course 111 sclerosis, makes the interim supporting substrate fitting body 120 (operation 3) that compound semiconductor layer 50 and supporting substrate 110 are fitted by macromolecular material binder course 111 thus.At this moment, in second main surface side of compound semiconductor layer 50, be the state of growing up of setting up with substrate GaAs monocrystal substrate 1.
The material of interim supporting substrate 110 is to constitute by also keeping rigidity and gas to produce less material when the following alloying heat treatment.Particularly, can silicon substrate or formations such as ceramic substrate (for example alumina plate) or metallic plate.On the other hand, macromolecular material binder course 111 can use heat molten type sticker or wax class.
Then, shown in the operation 4 of Fig. 3, remove the conduct of being set up from interim supporting substrate fitting body 120 and grow up with the GaAs monocrystal substrate 1 of substrate.This is removed step and can implement in the following manner, for example, interim supporting substrate fitting body 120 (with reference to operation 3) (for example be impregnated in etching solution with GaAs monocrystal substrate 1,10% hydrofluoric acid aqueous solution), the AlAs peel ply 3 that is formed at 24 in resilient coating 2 and luminescent layer portion is carried out selective etch, thus, this GaAs monocrystal substrate 1 is peeled off from interim supporting substrate fitting body 120.Again, also can adopt following operation, replace AlAs peel ply 3 to form the etching stopping layer that AlInP constitutes, first etching solution that use is selected etching to the GaAs tool (for example, the ammonia/hydrogen peroxide mixed liquor), GaAs monocrystal substrate 1 is removed with 2 etchings of GaAs resilient coating, by second etching solution of selecting etching (for example then used the AlInP tool, hydrochloric acid: also can add hydrofluoric acid when being used to remove the Al oxide layer), the etching stopping layer etching is removed.
So, remove the compound semiconductor layer 50 of GaAs monocrystal substrate 1, fit by macromolecular material binder course 111 and interim supporting substrate 110, and form interim supporting substrate fitting body 120.Therefore, although compound semiconductor layer 50 as thin as a wafer, still be difficult for to produce GaAs monocrystal substrate 1 etching ruined unfavorable condition of impact because of bubble etc. when removing, and, owing to also with the mode reinforcement of interim supporting substrate fitting body 120, also can carry out easily after the GaAs monocrystal substrate is removed so the operation after carrying out is handled.
Then, shown in operation 5, state with above-mentioned interim supporting substrate fitting body 120, second first type surface of the compound semiconductor layer 50 that exposes removing GaAs monocrystal substrate 1, form the metal level of the formations such as AuGeNi alloy of disperseing, again this metal level is used as the alloying heat treatment of luminescent layer portion side engagement alloying layer 31.At this moment, also simultaneously light is taken out the alloying that face lateral electrode 9 is advanced metal level 9a '.Alloying heat treatment is that the temperature with 300 ℃～450 ℃ is implemented under inert gas environment atmosphere.Afterwards, at second first type surface of the compound semiconductor layer 50 that forms luminescent layer portion side engagement alloying layer 31, with formation reflective metal layers 10 such as evaporations.
Again, the prepared silicon substrate 7 in addition, and the metal level in formations such as its two first type surfaces formation AuSb alloys carries out alloying heat treatment with 250 ℃～360 ℃ temperature range again, makes substrate-side thus respectively and engages alloying layer 32,16.In addition, engage formation backplate 15 on the alloying layer 16 in substrate-side.
Then, carry out the device substrate bonding process.Particularly, shown in the operation 6 of Fig. 3,, form unhardened conductivity adhesion material layer 11 ' at first first type surface of Si substrate 7 (second first type surface of compound semiconductor layer 50 also can).As only showing the shown in Figure 5 of major part, conductivity adhesion material layer 11 ' is by being coated with the conductivity adhesion material layer 11 ' of sticking with paste (or coating) shape and forming.As only showing the shown in Figure 6 of major part, also can form conductivity adhesion material layer by attaching the board with pliability 211 that constitutes by unhardened conductivity adhesion material again.For example, use contains epoxy when being 2 liquid type macromolecules such as macromolecular material in conjunction with the conductivity adhesion material of material, will be can reach in 1 hour when being up to 90% the temperature that reaches hardness and being defined as hardening temperature, can use this hardening temperature to be set in the scope of 30 ℃～180 ℃ (are preferably more than 50 ℃ below 160 ℃).
Then, shown in the operation 7 of Fig. 4,,, carry out heat hardening with above-mentioned hardening temperature (for example, 30 ℃～180 ℃) and handle (applying heat treatment) by unhardened conductivity adhesion material 11 ' overlapping the pressing of layer with silicon substrate 7 and reflective metal layer 10.Thus, silicon substrate 7 is fitted with suitable intensity by the conductivity adhesion material layer 11 that has hardened with reflective metal layer 10, and makes applying combination 130.In this stage, each alloying heat treatment that light takes out side and adhesive substrates side finishes all, heat hardening is handled and can be implemented with the temperature that is lower than it, thus, the alloying component that can effectively suppress to engage alloying layer diffuses in the reflecting surface that reflective metal layer 10 constitutes, and then obtains the more reflecting surface of high reflectance.
Heat treated is carried out interim supporting substrate separation circuit after finishing.Interim supporting substrate separation circuit, shown in the operation 8 of Fig. 4, heating macromolecular material binder course 111 makes it softening, and interim supporting substrate 110 is separated, removes.Again, this separable programming can carry out when the applying heat treatment of operation 7 simultaneously.Afterwards, shown in operation 9, the macromolecular material binder course 111 of first first type surface of compound semiconductor layer 50 will be remained in, with organic solvent dissolution, remove.Again, need use can dissolving macromolecular material binder course 111 and can not dissolve conductivity adhesion material layer 11 (for example, toluene etc.) for organic solvent.
The above, for ease of understanding, the operation of making adhesive substrates combination 130 is with the lamination kenel diagram of element monomer and is illustrated, but in fact, is to become the mode of array-like to form together with assortment a plurality of element wafers and make the applying wafer.Because conductivity adhesion material layer 11 pliability are good, so, also both homogeneous and high strength ground can be fitted, and improve the rate of finished products that makes element wafer by the cutting of adhesive substrates even conductivity adhesion material layer 11 side or Si substrate 7 sides produce the concavo-convex or crooked of a little.Again, compound conductor layer 50 side-lines that contain luminescent layer portion 24 form reflective metal layer 10, and fit by conductivity adhesion material layer 11 on Si substrate 7, do not fit in Si substrate 7 sides and form unnecessary metal level so be not required to be, and can reduce the workload that metal level forms, so make easily.Therefore, this applying wafer is cut into element wafer with general method, and it is fixed in after supporter carries out the routing etc. of lead, carry out resin-encapsulated, make final light-emitting component thus.
Again, light-emitting component 200 that also can be as shown in Figure 7, the Si substrate 7 that uses metal substrate 107 to replace as device substrate.Thus, can improve the heat dissipation characteristics of element.In addition, engage, so can omit joint metal of alloying layer owing to can be formed directly in ohm between metal substrate 107 and conductivity adhesion material layer 11 or the backplate 15.Again, metal substrate 107 can be by constituting as Cu, Al or with arbitrary alloy as principal component (for example, Cu-W alloy) wherein.
Again, when metal substrate 107 is easily formed the material formation of oxide film thereon with above-mentioned Al or Cu etc., for improving electric conducting state, shown in the dotted line among the figure, can form conducting and improve layer 231,232 in first main surface side of joining with conductivity adhesion material layer 11 or second main surface side of joining with backplate 15.Conducting improves layer 231,232, can form than metal substrate 107 low-melting alloy-layers (for example wax material layer).Particularly, the Al that easily forms fine and close and firm oxide skin(coating) with the surface is that metal is when constituting metal substrate 107, conducting improves layer 231,232 and can form with the Al alloy wax material that welding alloy (for example, Al-Zn, Sn-Zn, Cd-Zn system) or Al-Ga system, Al-Ga-Ni system, Au-Sn system or other Al alloys constitute with Al.Particularly, contain Zn or the Ga alloy as accessory ingredient, it improves and Al is the conducting effect excellence that metal substrate constitutes 107 of metal substrates.On the other hand, be metal when constituting metal substrate 107 with Cu, conducting improves layer 231,232, can Cu be that wax material, brass are that Ag such as wax material (Cu-Zn system), Ag-Sn system or Ag-In system are the formation of wax material.Conducting improves layer 231,232, be will be in order to form its metal material, make paper tinsel or be configured on the metal substrate 107, be heated to the above temperature of fusing point (liquidus temperature) of this metal material afterwards and make with the vapor deposition film of formation such as vacuum evaporation or with the coating layer of metal dust solder flux.
Claims (5)
1. light-emitting component, it is characterized in that: first first type surface with compound semiconductor layer with luminescent layer portion takes out face as light, at second first type surface of above-claimed cpd semiconductor layer by being that the reflective metal layer of principal component combines with the device substrate of conductivity with Au, Ag or Al, and, above-mentioned reflective metal layer and said elements substrate, be to close by the conductivity adhesion material laminating that electroconductive particle is combined the material combination with macromolecule
Between above-mentioned reflective metal layer and above-claimed cpd semiconductor layer, the contact resistance that is formed with dispersion lowers the joint alloying layer of usefulness,
Above-mentioned macromolecule is in conjunction with material, is that temperature when being lower than the alloying heat treatment of above-mentioned joint alloying layer is carried out heat hardening and handled and form,
And above-mentioned macromolecule is in conjunction with material, is to be that macromolecular material, carbamic acid are that arbitrary institute of macromolecular material, acrylic acid series macromolecular material constitutes by being selected from epoxy.
2. light-emitting component according to claim 1 is characterized in that the said elements substrate is made of metal substrate.
3. the manufacture method of a light-emitting component, promptly forming with Au, Ag or Al in second main surface side of taking out face with first first type surface as light and having a compound semiconductor layer of luminescent layer portion is the reflective metal layer of principal component, with first first type surface of conductive element substrate and second first type surface of above-mentioned reflective metal layer, close by the conductivity adhesion material laminating that electroconductive particle is combined the material combination with macromolecule, make adhesive substrates thus, and above-mentioned adhesive substrates cut into element wafer, it is characterized in that:
The above-mentioned macromolecule of above-mentioned conductivity adhesion material layer is to form with heat hardening type macromolecular material in conjunction with material, unhardened conductivity adhesion material layer is disposed between second first type surface of first first type surface of said elements substrate and above-mentioned reflective metal layer and makes it superimposed, handle and above-mentioned conductivity adhesion material layer is carried out heat hardening with above-mentioned state, and fit
And the board with pliability with unhardened conductivity adhesion material constitutes is attached at the arbitrary of above-mentioned reflective metal layer or said elements substrate, forms above-mentioned conductivity adhesion material layer thus.
4. according to the manufacture method of the described light-emitting component of claim 3, it is characterized in that, second first type surface at this compound semiconductor layer, form the metal level that the contact resistance that disperses lowers usefulness, make the metal level that this contact resistance lowers usefulness form the joint alloying layer by carrying out alloying heat treatment, after alloying heat treatment, carry out the heat hardening processing of this conductivity adhesion material layer to be lower than the heat treated temperature of alloying.
5. the manufacture method of light-emitting component according to claim 4, it is characterized in that, after above-mentioned alloying heat treatment, mode with second first type surface of this compound semiconductor layer of cover disperseing to be formed with above-mentioned joint alloying layer forms above-mentioned reflective metal layer, carries out the heat hardening of this conductivity adhesion material layer afterwards and handles.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP068040/2004 | 2004-03-10 | ||
| JP068040/04 | 2004-03-10 | ||
| JP2004068040A JP4505794B2 (en) | 2004-03-10 | 2004-03-10 | Method for manufacturing light emitting device |
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| Publication Number | Publication Date |
|---|---|
| CN1667849A CN1667849A (en) | 2005-09-14 |
| CN100421270C true CN100421270C (en) | 2008-09-24 |
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| JP (1) | JP4505794B2 (en) |
| CN (1) | CN100421270C (en) |
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| CN113130715B (en) * | 2021-04-15 | 2022-09-02 | 中国科学院上海微***与信息技术研究所 | Substrate transfer method of vertical structure silicon-based quantum dot light-emitting device |
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| JP2001007399A (en) * | 1999-06-23 | 2001-01-12 | Toshiba Corp | Semiconductor light emitting element |
| JP2001339100A (en) * | 2000-05-30 | 2001-12-07 | Shin Etsu Handotai Co Ltd | Light emitting element and its manufacturing method |
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| JP2003258316A (en) * | 2002-02-21 | 2003-09-12 | Korai Kagi Kofun Yugenkoshi | Light emitting diode having enhanced light emission luminance and its manufacturing method |
| US6649437B1 (en) * | 2002-08-20 | 2003-11-18 | United Epitaxy Company, Ltd. | Method of manufacturing high-power light emitting diodes |
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| JP4061499B2 (en) * | 2002-05-17 | 2008-03-19 | 信越半導体株式会社 | Method for manufacturing light emitting device |
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| JPS56152281A (en) * | 1980-04-26 | 1981-11-25 | Toshiba Corp | Light emitting diode |
| JP2001007399A (en) * | 1999-06-23 | 2001-01-12 | Toshiba Corp | Semiconductor light emitting element |
| JP2001339100A (en) * | 2000-05-30 | 2001-12-07 | Shin Etsu Handotai Co Ltd | Light emitting element and its manufacturing method |
| JP2003258316A (en) * | 2002-02-21 | 2003-09-12 | Korai Kagi Kofun Yugenkoshi | Light emitting diode having enhanced light emission luminance and its manufacturing method |
| US20030164503A1 (en) * | 2002-03-04 | 2003-09-04 | United Epitaxy Co., Ltd. | High efficiency light emitting diode and method of making the same |
| US6649437B1 (en) * | 2002-08-20 | 2003-11-18 | United Epitaxy Company, Ltd. | Method of manufacturing high-power light emitting diodes |
Also Published As
| Publication number | Publication date |
|---|---|
| TW200531317A (en) | 2005-09-16 |
| TWI367570B (en) | 2012-07-01 |
| JP4505794B2 (en) | 2010-07-21 |
| JP2005259910A (en) | 2005-09-22 |
| CN1667849A (en) | 2005-09-14 |
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