CN100416863C - 廉价多晶硅薄膜太阳电池 - Google Patents
廉价多晶硅薄膜太阳电池 Download PDFInfo
- Publication number
- CN100416863C CN100416863C CNB2006101171559A CN200610117155A CN100416863C CN 100416863 C CN100416863 C CN 100416863C CN B2006101171559 A CNB2006101171559 A CN B2006101171559A CN 200610117155 A CN200610117155 A CN 200610117155A CN 100416863 C CN100416863 C CN 100416863C
- Authority
- CN
- China
- Prior art keywords
- polysilicon
- substrate
- film solar
- solar cell
- cheap
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Photovoltaic Devices (AREA)
Abstract
Description
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2006101171559A CN100416863C (zh) | 2006-10-13 | 2006-10-13 | 廉价多晶硅薄膜太阳电池 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2006101171559A CN100416863C (zh) | 2006-10-13 | 2006-10-13 | 廉价多晶硅薄膜太阳电池 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1933185A CN1933185A (zh) | 2007-03-21 |
CN100416863C true CN100416863C (zh) | 2008-09-03 |
Family
ID=37878899
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2006101171559A Expired - Fee Related CN100416863C (zh) | 2006-10-13 | 2006-10-13 | 廉价多晶硅薄膜太阳电池 |
Country Status (1)
Country | Link |
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CN (1) | CN100416863C (zh) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
ES2399465T3 (es) * | 2007-07-27 | 2013-04-01 | Max Era, Inc. | Oblea/cristal de cinta y procedimiento para su fabricación |
EP2071632B1 (en) * | 2007-12-14 | 2013-02-27 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Thin-film solar cell and process for its manufacture |
CN101540346B (zh) * | 2008-03-19 | 2011-05-04 | 高文秀 | 多晶硅薄膜太阳能电池的制造方法 |
CN102290473B (zh) * | 2011-07-06 | 2013-04-17 | 中国科学院上海技术物理研究所 | 一种背面点接触晶体硅太阳电池及制备方法 |
CN102290488A (zh) * | 2011-07-21 | 2011-12-21 | 中国科学院宁波材料技术与工程研究所 | 一种多晶硅厚膜的制备方法 |
CN102569523B (zh) * | 2012-02-09 | 2013-03-27 | 苏州盛康光伏科技有限公司 | 多晶硅太阳能光伏电池硅片的扩散方法 |
KR20130109330A (ko) | 2012-03-27 | 2013-10-08 | 엘지이노텍 주식회사 | 태양전지 및 이의 제조 방법 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1441504A (zh) * | 2003-04-03 | 2003-09-10 | 上海交通大学 | 高效低成本大面积晶体硅太阳电池工艺 |
CN1547259A (zh) * | 2003-12-09 | 2004-11-17 | 清华大学 | 陶瓷衬底多晶硅薄膜太阳能电池 |
CN1639063A (zh) * | 2002-02-28 | 2005-07-13 | 佳能株式会社 | 多晶硅衬底和太阳能电池的制备方法 |
US20050151131A1 (en) * | 2002-06-11 | 2005-07-14 | Wager John F.Iii | Polycrystalline thin-film solar cells |
-
2006
- 2006-10-13 CN CNB2006101171559A patent/CN100416863C/zh not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1639063A (zh) * | 2002-02-28 | 2005-07-13 | 佳能株式会社 | 多晶硅衬底和太阳能电池的制备方法 |
US20050151131A1 (en) * | 2002-06-11 | 2005-07-14 | Wager John F.Iii | Polycrystalline thin-film solar cells |
CN1441504A (zh) * | 2003-04-03 | 2003-09-10 | 上海交通大学 | 高效低成本大面积晶体硅太阳电池工艺 |
CN1547259A (zh) * | 2003-12-09 | 2004-11-17 | 清华大学 | 陶瓷衬底多晶硅薄膜太阳能电池 |
Also Published As
Publication number | Publication date |
---|---|
CN1933185A (zh) | 2007-03-21 |
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Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
EE01 | Entry into force of recordation of patent licensing contract |
Assignee: Shanghai ideal electronic technology (Dongtai) Co., Ltd. Assignor: Shanghai Inst. of Technical Physics, Chinese Academy of Sciences Contract record no.: 2010320000508 Denomination of invention: Cheap polysilicon thin film solar cell Granted publication date: 20080903 License type: Exclusive License Open date: 20070321 Record date: 20100430 |
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C17 | Cessation of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20080903 Termination date: 20121013 |