CN100414719C - Micro battery and its mfg. method - Google Patents

Micro battery and its mfg. method Download PDF

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Publication number
CN100414719C
CN100414719C CNB2005100962286A CN200510096228A CN100414719C CN 100414719 C CN100414719 C CN 100414719C CN B2005100962286 A CNB2005100962286 A CN B2005100962286A CN 200510096228 A CN200510096228 A CN 200510096228A CN 100414719 C CN100414719 C CN 100414719C
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electrode
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CN1787232A (en
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苑伟政
乔大勇
孙磊
秦冲
吕湘连
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Northwestern Polytechnical University
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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Abstract

The present invention discloses a micro battery and a manufacture method thereof, which solves the problems of small contact area between a radioactive source and an energy conversion structure, and unstable operating state of a battery caused by simple contact mode between the radioactive source and the energy conversion structure existing in the prior art. The present invention is characterized in that a two-dimensional vertical side wall square hole array from 2*2 to 20*20 is arranged in an N-type area (1); the surface of the vertical side wall square holes (2) is provided with a P-type area (3), and a plating area (5) is arranged on the P-type area (3); an N-type area electrode (4.1) area and a P-type area electrode (4.2) area are arranged on one side of the N-type area (1). Because the present invention adopts a vertical side wall square hole array structure, compared with the prior art, the contact area between the radioactive source and the energy conversion structure is increased by 171%, which is favorable for increasing the battery current; the plating area structure is adopted, the diversification of the contact mode between the radioactive source and an energy conversion structure is realized, and the stability of the radioactive source under the operating state is enhanced.

Description

Micro cell and preparation method thereof
Technical field
The present invention relates to a kind of micro cell, also relate to the manufacture method of this micro cell.
Background technology
With reference to Fig. 4, Fig. 5, document " Final Scientific/Technical Report (US.Department of Energy AwardNo.DE-FG07-99ID13781) " A Nuclear Microbattery for MEMS Devices " " has been introduced the James Blanchard of University of Wisconsin at Madison and the energy converting structure that Douglass Henderson proposes inverted triangle straight trough type and inverted pyramid type; Inverted triangle straight trough type transformational structure is the P type silicon that is the uniform inverted triangle straight trough of the layer thickness type that mixes on the N type silicon of inverted triangle straight trough on the surface.Inverted pyramid type energy converting structure is the P type silicon that is the uniform inverted pyramid type of a layer thickness that mixes on the N type silicon of inverted pyramid type on the surface.It is in the inverted triangle straight trough or inverted pyramid on surface that liquid radioactive source is introduced in P type silicon.When Radioactive Source Decay, the part β ion that radiates passes the P-N knot, impels near the electronics generation ionization the P-N knot to produce hole-duplet.Charge carrier is directed moving under the effect of internal electric field, and so just electrode can be drawn respectively from the double-layer structure of P-N knot becomes a power supply.
But the surface area that contacts between the energy converting structure of this inverted triangle straight trough type or inverted pyramid type, its radioactive source and device is little, thereby makes battery current less.With inverted pyramid type energy converting structure is example, if the opening frame of inverted pyramid is a unit 1, etching depth is 0.7, and its surface area is 1.41.
And, this structure makes that the way of contact of radioactive source and energy converting structure can only be that liquid radioactive source directly is filled in the surface of P-N knot or liquid radioactive source is formed thin film after the surface evaporation of P-N knot, the result has caused the unsteadiness of radioactive source, is easy to move or come off under external interference.
Summary of the invention
For overcoming radioactive source in the prior art and the deficiency of the battery operated state labile that the energy converting structure contact area is little, the way of contact simply causes between radioactive source and the energy converting structure, the invention provides a kind of micro cell, the manufacture method of this micro cell is provided simultaneously.
The technical solution adopted for the present invention to solve the technical problems is: a kind of micro cell, comprise N type district 1 and p type island region 3, and it is characterized in that: vertical sidewall square hole 2 arrays that two dimension 2 * 2～20 * 20 is arranged in N type district 1; The p type island region 3 that is on vertical sidewall square hole 2 surfaces is electroplating region 5 on p type island region 3; Reserve N type region electrode 4.1 districts on the one side in N type district 1, reserve p type island region electrode 4.2 districts in addition with interior electroplating region 5 at p type island region 3.
The depth-to-width ratio of described vertical sidewall square hole 2 is 1: 1～20: 1.
The metal layer thickness of described electroplating region 5 is 1000 dusts.
Described N type region electrode 4.1 and p type island region electrode 4.2 apart are 1.5～2mm.
A kind of manufacture method of above-mentioned micro cell may further comprise the steps:
Step 1, employing doping content are 1 * 10 17～1 * 10 18Cm -3The crystal orientation is＜100〉N type district 1 be substrate;
Step 2, in N type district 1 surface deposition, 2 μ m SiO 2Mask layer is at SiO 2Surface deposition 2 μ m Si 3N 4Mask layer;
Step 3, use mask photoetching, dry etching to fall the Si of 2 * 2～20 * 20 vertical sidewall square hole 2 array positions 3N 4With SiO 2Form the window of wet etching;
Step 4, to go out the depth-to-width ratio scope with the KOH wet etching be 1: 1～20: 1 two dimension 2 * 2～20 * 20 vertical sidewall square holes 2 arrays;
Step 5, remove Si 3N 4Mask layer is used the mask photoetching, removes unnecessary SiO 2Mask layer forms the window of doping p type island region 3, and has reserved 5 times to the space of N type region electrode 4.1 areas for N type region electrode 4.1;
Step 6, doping, forming junction depth is 1 μ m, p type island region 3 concentration are 1 * 10 20～1 * 10 21Cm -3P-N knot;
Step 7, remove SiO 2Mask layer, gluing;
Step 8, make N type region electrode 4.1 by lithography with mask, p type island region electrode 4.2 is reserved electroplating region 5, and splash-proofing sputtering metal peels off peripheral unnecessary metallic copper.
The invention has the beneficial effects as follows: owing to adopt vertical sidewall square hole structure, make radioactive source and energy converting structure contact area bring up to 3.82 by 1.41 of prior art, radioactive source and energy converting structure contact area have increased 171%, and this vertical sidewall square hole structure is of value to the increase of battery current; Adopt the electroplating region structure, liquid radioactive source not only can directly be filled in the surface of electroplating region or form thin film in the electroplating region surface evaporation, radioactive source can also be electroplated surface at electroplating region, thereby make the way of contact variation of radioactive source and energy converting structure, also strengthened the stability of radioactive source under in working order.
The present invention is further described below in conjunction with drawings and Examples.
Description of drawings
Fig. 1 is a structural representation of the present invention
Fig. 2 is that the B-B of Fig. 1 is to cutaway view
Fig. 3 is that the A-A of Fig. 1 is to cutaway view
Fig. 4 is the flow chart of manufacture method of the present invention
Fig. 5 is an inverted triangle straight trough type energy converting structure, is the prior art schematic diagram
Fig. 6 is an inverted pyramid type array Conversion of energy structure, is the prior art schematic diagram
Among the figure, 1-N type district 2-vertical sidewall square hole 3-P type district 4.1-N type region electrode 4.2-P type region electrode 5-electroplating region
Embodiment
Structure embodiment 1: with reference to Fig. 1～3, energy converting structure of the present invention comprises N type district 1, in order to increase surface area, designs two dimension 2 * 2 vertical sidewall square holes 2 arrays in N type district 1, and the depth-to-width ratio of vertical sidewall square hole 2 is 1: 1; On vertical sidewall square hole 2 surfaces are p type island regions 3 of 1 μ m, are electroplating regions 5 on vertical sidewall square hole array 2 and in p type island region 3 scopes; Reserve N type region electrode 4.1 districts on the one side in N type district 1, reserve p type island region electrode 4.2 districts in addition with interior electroplating region 5 at p type island region 3; 4.1 about 50 μ m are square for N type region electrode, and 4.2 about 50 μ m are square for the p type island region electrode.Form two dimension 2 * 2 vertical sidewall square holes 2 arrays in N type district 1 surface etch.At the local uniform p type island region 3 of a layer thickness that mixes of vertical sidewall square hole 2 array surface, avoided N type region electrode 4.1 during doping, reserved the space of 5 times of areas for N type region electrode 4.1, form the P-N junction structures by N type district 1 jointly with p type island region 3.Be used to draw the N type region electrode 4.1 of lead and the surface that p type island region electrode 4.2 is deposited on N type district 1 and p type island region 3 respectively, two electrodes are 2mm apart.Electroplating region 5 is deposited on the surface of vertical sidewall square hole 2 arrays.
Structure embodiment 2: with reference to Fig. 1～3, energy converting structure of the present invention comprises N type district 1, in order to increase surface area, designs two dimension 5 * 20 vertical sidewall square holes 2 arrays in N type district 1, and the depth-to-width ratio of vertical sidewall square hole 2 is 10: 1; On vertical sidewall square hole 2 surfaces are p type island regions 3 of 1 μ m, are electroplating regions 5 on vertical sidewall square hole array 2 and in p type island region 3 scopes; Reserve N type region electrode 4.1 districts on the one side in N type district 1, reserve p type island region electrode 4.2 districts in addition with interior electroplating region 5 at p type island region 3; 4.1 about 50 μ m are square for N type region electrode, and 4.2 about 50 μ m are square for the p type island region electrode.Form two dimension 2 * 2 vertical sidewall square holes 2 arrays in N type district 1 surface etch.At the local uniform p type island region 3 of a layer thickness that mixes of vertical sidewall square hole 2 array surface, avoided N type region electrode 4.1 during doping, reserved the space of 5 times of areas for N type region electrode 4.1, form the P-N junction structures by N type district 1 jointly with p type island region 3.Be used to draw the N type region electrode 4.1 of lead and the surface that p type island region electrode 4.2 is deposited on N type district 1 and p type island region 3 respectively, two electrodes are 1.7mm apart.Electroplating region 5 is deposited on the surface of vertical sidewall square hole 2 arrays.
Structure embodiment 3: with reference to Fig. 1～3, energy converting structure of the present invention comprises N type district 1, in order to increase surface area, designs two dimension 20 * 20 vertical sidewall square holes 2 arrays in N type district 1, and the depth-to-width ratio of vertical sidewall square hole 2 is 20: 1; On vertical sidewall square hole 2 surfaces are p type island regions 3 of 1 μ m, are electroplating regions 5 on vertical sidewall square hole array 2 and in p type island region 3 scopes; Reserve N type region electrode 4.1 districts on the one side in N type district 1, reserve p type island region electrode 4.2 districts in addition with interior electroplating region 5 at p type island region 3; 4.1 about 50 μ m are square for N type region electrode, and 4.2 about 50 μ m are square for the p type island region electrode.Form two dimension 2 * 2 vertical sidewall square holes 2 arrays in N type district 1 surface etch.At the local uniform p type island region 3 of a layer thickness that mixes of vertical sidewall square hole 2 array surface, avoided N type region electrode 4.1 during doping, reserved the space of 5 times of areas for N type region electrode 4.1, form the P-N junction structures by N type district 1 jointly with p type island region 3.Be used to draw the N type region electrode 4.1 of lead and the surface that p type island region electrode 4.2 is deposited on N type district 1 and p type island region 3 respectively, two electrodes are 1.5mm apart.Electroplating region 5 is deposited on the surface of vertical sidewall square hole 2 arrays.
Vertical sidewall square hole 2 structures of the foregoing description increase radioactive source and energy converting structure contact area.If the limit opening frame of vertical sidewall square hole is a unit 1, etching depth is 0.7, and then its surface area is 3.82.
Method embodiment 1: with reference to Fig. 4,1) adopting doping content is 1 * 10 17Cm -3The crystal orientation is＜100〉N type district 1 be substrate;
2) 1 surface deposition, the 2 μ m SiO in N type district 2Mask layer is at SiO 2Surface deposition 2 μ m Si 3N 4Mask layer;
3) use the mask photoetching, fall the Si of 2 * 2 vertical sidewall square hole 2 array positions by the designing requirement dry etching 3N 4With SiO 2Form the window of wet etching;
4) going out depth-to-width ratio with the KOH wet etching is 1: 1, sidewall is＜and 100〉crystal orientation two dimension 2 * 2 vertical sidewall square holes 2 arrays;
5) remove Si 3N 4Mask layer is used the mask photoetching, removes unnecessary SiO 2Mask layer, the window of formation doping p type island region 3, this doping window has been avoided N type region electrode 4.1, for N type region electrode 4.1 has been reserved 5 times to the space of N type region electrode 4.1 areas.
6) mix, forming junction depth is 1 μ m, and p type island region 3 concentration are 1 * 10 20Cm -3P-N knot;
7) remove SiO 2Mask layer, gluing;
8) make N type region electrode 4.1 by lithography with mask, p type island region electrode 4.2 and electroplating region 5, splash-proofing sputtering metal copper peels off peripheral unnecessary metallic copper.The result stays N type region electrode 4.1 on the surface in the N type district 1 that is not doped, and stays p type island region electrode 4.2 on p type island region 3 surfaces.N type region electrode 4.1 and p type island region electrode 4.2 have formed ohm with N type district 1 and p type island region 3 respectively and have connect, and two electrodes have been avoided excessive leakage current at a distance of being 2mm.Electroplating region 5 is deposited on vertical sidewall square hole 2 array surface, and is controlled at fully in the p type island region 3, prevents to cause short circuit because of electroplating region 5 has covered p type island region 3 with part N type district 1.The metal layer thickness of electroplating region 5 is 1000 dusts, has prevented that the β ion from passing the too much energy loss of electroplating region 5.Form the energy converting structure of radioisotope micro cell.
Method embodiment 2: with reference to Fig. 4,1) adopting doping content is 5 * 10 17Cm -3The crystal orientation is＜100〉N type district 1 be substrate;
2) 1 surface deposition, the 2 μ m SiO in N type district 2Mask layer is at SiO 2Surface deposition 2 μ m Si 3N 4Mask layer;
3) use the mask photoetching, fall the Si of 5 * 20 vertical sidewall square hole 2 array positions by the designing requirement dry etching 3N 4With SiO 2Form the window of wet etching;
4) going out depth-to-width ratio with the KOH wet etching is 10: 1, sidewall is＜and 100〉crystal orientation two dimension 5 * 20 vertical sidewall square holes 2 arrays;
5) remove Si 3N 4Mask layer is used the mask photoetching, removes unnecessary SiO 2Mask layer, the window of formation doping p type island region 3, this doping window has been avoided N type region electrode 4.1, for N type region electrode 4.1 has been reserved 5 times to the space of N type region electrode 4.1 areas.
6) mix, forming junction depth is 1.5 μ m, and p type island region 3 concentration are 5 * 10 20Cm -3P-N knot;
7) remove SiO 2Mask layer, gluing;
8) make N type region electrode 4.1 by lithography with mask, p type island region electrode 4.2 and electroplating region 5, splash-proofing sputtering metal copper peels off peripheral unnecessary metallic copper.The result stays N type region electrode 4.1 on the surface in the N type district 1 that is not doped, and stays p type island region electrode 4.2 on p type island region 3 surfaces.N type region electrode 4.1 and p type island region electrode 4.2 have formed ohm with N type district 1 and p type island region 3 respectively and have connect, and two electrodes have been avoided excessive leakage current at a distance of being 1.7mm.Electroplating region 5 is deposited on vertical sidewall square hole 2 array surface, and is controlled at fully in the p type island region 3, prevents to cause short circuit because of electroplating region 5 has covered p type island region 3 with part N type district 1.The metal layer thickness of electroplating region 5 is 1000 dusts, has prevented that the β ion from passing the too much energy loss of electroplating region 5.Form the energy converting structure of radioisotope micro cell.
Method embodiment 3: with reference to Fig. 4,1) adopting doping content is 1 * 10 18Cm -3The crystal orientation is＜100〉N type district 1 be substrate;
2) 1 surface deposition, the 2 μ m SiO in N type district 2Mask layer is at SiO 2Surface deposition 2 μ m Si 3N 4Mask layer;
3) use the mask photoetching, fall the Si of 20 * 20 vertical sidewall square hole 2 array positions by the designing requirement dry etching 3N 4With SiO 2Form the window of wet etching;
4) going out depth-to-width ratio with the KOH wet etching is 20: 1, sidewall is＜and 100〉crystal orientation two dimension 20 * 20 vertical sidewall square holes 2 arrays;
5) remove Si 3N 4Mask layer is used the mask photoetching, removes unnecessary SiO 2Mask layer, the window of formation doping p type island region 3, this doping window has been avoided N type region electrode 4.1, for N type region electrode 4.1 has been reserved 5 times to the space of N type region electrode 4.1 areas.
6) mix, forming junction depth is 1.5 μ m, and p type island region 3 concentration are 1 * 10 21Cm -3P-N knot;
7) remove SiO 2Mask layer, gluing;
8) make N type region electrode 4.1 by lithography with mask, p type island region electrode 4.2 and electroplating region 5, splash-proofing sputtering metal copper peels off peripheral unnecessary metallic copper.The result stays N type region electrode 4.1 on the surface in the N type district 1 that is not doped, and stays p type island region electrode 4.2 on p type island region 3 surfaces.N type region electrode 4.1 and p type island region electrode 4.2 have formed ohm with N type district 1 and p type island region 3 respectively and have connect, and two electrodes have been avoided excessive leakage current at a distance of being 1.5mm.Electroplating region 5 is deposited on vertical sidewall square hole 2 array surface, and is controlled at fully in the p type island region 3, prevents to cause short circuit because of electroplating region 5 has covered p type island region 3 with part N type district 1.The metal layer thickness of electroplating region 5 is 1000 dusts, has prevented that the β ion from passing the too much energy loss of electroplating region 5.Form the energy converting structure of radioisotope micro cell.

Claims (5)

1. a micro cell comprises N type district (1) and p type island region (3), it is characterized in that: vertical sidewall square hole (2) array that two dimension 2 * 2～20 * 20 is arranged in N type district (1); The p type island region (3) that is on vertical sidewall square hole (2) surface is electroplating region (5) on p type island region (3); Reserve N type region electrode (4.1) district on the one side in N type district (1), reserve p type island region electrode (4.2) district in addition with interior electroplating region (5) at p type island region (3).
2. micro cell according to claim 1 is characterized in that: the depth-to-width ratio of described vertical sidewall square hole (2) is 1: 1～20: 1.
3. micro cell according to claim 1 is characterized in that: the metal layer thickness of described electroplating region (5) is 1000 dusts.
4. micro cell according to claim 1 is characterized in that: described N type region electrode (4.1) and p type island region electrode (4.2) apart are 1.5～2mm.
5. the manufacture method of a micro cell according to claim 1 may further comprise the steps:
Step 1, employing doping content are 1 * 10 17～1 * 10 18Cm -3The crystal orientation is＜100〉N type district (1) be substrate;
Step 2, at N type district (1) surface deposition 2 μ m SiO 2Mask layer is at SiO 2Surface deposition 2 μ m Si 3N 4Mask layer;
Step 3, use mask photoetching, dry etching to fall the Si of 2 * 2～20 * 20 vertical sidewall square hole (2) array position 3N 4With SiO 2Form the window of wet etching;
Step 4, to go out the depth-to-width ratio scope with the KOH wet etching be 1: 1～20: 1 two dimension 2 * 2～20 * 20 vertical sidewall square hole (2) arrays;
Step 5, remove Si 3N 4Mask layer is used the mask photoetching, removes unnecessary SiO 2Mask layer forms the window of doping p type island region (3), and has reserved 5 times to the space of N type region electrode (4.1) area for N type region electrode (4.1);
Step 6, doping, forming junction depth is 1 μ m, p type island region (3) concentration is 1 * 10 20～1 * 10 21Cm -3P-N knot;
Step 7, remove SiO 2Mask layer, gluing;
Step 8, make N type region electrode (4.1) by lithography with mask, p type island region electrode (4.2) is reserved electroplating region (5), and splash-proofing sputtering metal peels off peripheral unnecessary metallic copper.
CNB2005100962286A 2005-10-24 2005-10-24 Micro battery and its mfg. method Expired - Fee Related CN100414719C (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10431828B2 (en) * 2016-05-31 2019-10-01 International Business Machines Corporation Microbattery with through-silicon via electrodes
RU2659618C1 (en) * 2017-01-31 2018-07-03 Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский технологический университет "МИСиС" Converter of ionizing radiations with net bulk structure and method of its production

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