CN100414716C - Magnetic switching device and magnetic memory using the same - Google Patents

Magnetic switching device and magnetic memory using the same Download PDF

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Publication number
CN100414716C
CN100414716C CNB2003801077689A CN200380107768A CN100414716C CN 100414716 C CN100414716 C CN 100414716C CN B2003801077689 A CNB2003801077689 A CN B2003801077689A CN 200380107768 A CN200380107768 A CN 200380107768A CN 100414716 C CN100414716 C CN 100414716C
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magnetic
layer
switch element
charge carrier
conversion layer
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CN1732573A (en
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小田川明弘
松川望
杉田康成
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Panasonic Holdings Corp
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Matsushita Electric Industrial Co Ltd
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Abstract

A magnetic switching device having a structure that is totally different from conventional ones and an improved energy conversion efficiency for changing the magnetization state of a magnetic body, and a magnetic memory using such a magnetic switching device are disclosed. The magnetic switching device comprises a magnetic layer, a transition layer which is magnetically coupled with the magnetic layer, and a carrier supplier containing at least one material selected among metals and semiconductors. The transition layer and the carrier supplier are so arranged that a voltage can be applied between them. Transition between non-ferromagnetism and ferromagnetism occurs in the transition layer by applying a voltage thereto, thereby changing the magnetization state of the magnetic layer.

Description

Magnetic switch element and use the magnetic storage of this element
Technical field
The present invention relates to magnetic switch element and use the magnetic storage of this magnetic switch element.
Background technology
Have magnetic and between an electric magnetic, carry out the switch element of power conversion, be widely used transducer classes such as reproduction head at magnetic recording system, power transducer, acceleration transducer, and on the various magnetic devices such as magnetic solid-state memory class such as magnetic random reference to storage.But following energy conversion efficiency is low to be an one problem, and therefore expectation has the magnetic switch element of energy conversion efficiency higher (low consumption electric power promptly).
As the control method of magnetic switch element, for example, the method that has the state with the contained magnet of magnetic switch element to change as example more specifically, has the method with the direction of magnetization counter-rotating of above-mentioned magnet.Known to general: the magnetized state in the magnet is by positive energy exchange, crystallization magnetic anisotropy energy, magnetostatic energy and the graceful energy sum decision of match that external magnetic field produced.Wherein, magnetized state is changed and controllable physical quantity is magnetostatic energy and matches graceful usefulness.Given this, when using the magnetic state of controlling electric energy magnet, the past is that carry out the external magnetic field that is produced when utilizing electric current to flow through.But for example, the energy conversion efficiency that produces based on the magnetic field of line current approximately is about 1%.And the intensity in the magnetic field that is produced under the situation of line current is and the inversely proportional relation of distance.Under the most situation,, therefore, think that energy conversion efficiency is also lower than 1% owing between lead that flows through line current and the magnetic in the magnetic switch element insulator being set.Therefore, energy conversion efficiency is so low, it is believed that it is further to hinder one of universal reason of magnetic switch element and the magnetic devices that has used magnetic switch element.
Summary of the invention
In view of the situation, the object of the invention is to provide a kind of by having the magnetic storage that improves the magnetic switch element of the energy conversion efficiency that the magnetized state that is used to make magnet changes with the complete different structure of technology now and use this magnetic switch element.
Magnetic switch element of the present invention comprises: magnetosphere, with the magnetic-coupled conversion layer of above-mentioned magnetosphere with comprise the charge carrier that is selected from metal and semi-conductive at least a material and supply with body, above-mentioned conversion layer and above-mentioned charge carrier are supplied with body and are disposed with the state that can apply voltage between above-mentioned conversion layer and above-mentioned charge carrier supply body, above-mentioned conversion layer is because of applying the layer that above-mentioned voltage produces non-ferromagnetism-ferromagnetism conversion, because of the above-mentioned conversion of above-mentioned conversion layer, above-mentioned magnetospheric magnetized state changes.
At this, above-mentioned conversion layer also can be when applying above-mentioned voltage, supplies with body by any one the charge carrier that will be selected from electronics and hole (hole) from above-mentioned charge carrier and injects the layer that above-mentioned conversion takes place above-mentioned conversion layer.
And above-mentioned conversion layer also can be when applying above-mentioned voltage, by will be selected from electronics and hole (hole) any one carrier-induced to above-mentioned conversion layer take place above-mentioned conversion the layer.
Secondly, magnetic storage of the present invention comprises: a plurality of above-mentioned magnetic switch element that further contains the test section of the variation that detects above-mentioned magnetospheric magnetized state; Be used for reading with conductor lines and the information that reads above-mentioned information and use conductor lines at the information of above-mentioned magnetic switch element recorded information record.
Description of drawings
Fig. 1 is the schematic diagram of an example of expression magnetic switch element of the present invention.
Fig. 2 A and Fig. 2 B are the schematic diagrames that is illustrated in the example that magnetospheric magnetized state changes in the magnetic switch element of the present invention.
Fig. 3 is the schematic diagram that is used for illustrating the magnetic conversion example in the conversion layer of magnetic switch element of the present invention.
Fig. 4 is the schematic diagram of another example of expression magnetic switch element of the present invention.
Fig. 5 is the schematic diagram of other example of expression magnetic switch element of the present invention.
Fig. 6 is the schematic diagram of other example of expression magnetic switch element of the present invention.
Fig. 7 is the schematic diagram of other example of expression magnetic switch element of the present invention.
Fig. 8 A, 8B and Fig. 8 C are the magnetosphere of expression in the magnetic switch element of the present invention and the schematic diagram of an example of the variation of magnetospheric magnetized state.
Fig. 9 is the schematic diagram of other example of expression magnetic switch element of the present invention.
Figure 10 is the schematic diagram of an example of the expression circuit that uses magnetic switch element of the present invention.
Figure 11 is the schematic diagram that another example of magnetic switch element of the present invention is used in expression.
Figure 12 is the schematic diagram that another other examples of magnetic switch element of the present invention are used in expression.
Figure 13 is the schematic diagram of an example of expression magnetic storage of the present invention.
To be the expression magnetic switch element that is used for magnetic storage of the present invention with information write down with conductor lines and information Figure 14 reads schematic diagram with an example that concerns between the conductor lines.
Figure 15 is the schematic diagram of an example of expression magnetic storage of the present invention.
Figure 16 is a schematic diagram of representing an example of the magnetic memory circuit that uses in an embodiment.
Embodiment
With reference to following accompanying drawing embodiment of the present invention is illustrated.And, in following embodiment, represent with prosign that the situation of omitting repeat specification is arranged with a part.
At first, magnetic switch element of the present invention is illustrated.
The magnetic switch element 1 that Fig. 1 represents comprises: magnetosphere 2, with magnetosphere 2 magnetic-coupled conversion layers 3 and contain the charge carrier that is selected from metal and semi-conductive at least a material and supply with body 4.It is to be configured with the state that can apply voltage between magnetosphere 2 and charge carrier supply body 4 that magnetosphere 2 and charge carrier are supplied with body 4.For example, in magnetic switch element shown in Figure 11, be to carry out lamination with the order of charge carrier supply body 4, conversion layer 3 and magnetosphere 2.At this, conversion layer 3 is by apply the layer that voltage produces non-ferromagnetism-ferromagnetism conversion between magnetosphere 2 and charge carrier supply body 4.Because the magnetic coupling of magnetosphere 2 and conversion layer 3, the non-ferromagnetism-ferromagnetism conversion by conversion layer 3 can make the magnetized state of magnetosphere 2 change.That is,, the magnetized state of magnetosphere 2 is changed by between conversion layer 3 and charge carrier supply body 4, applying voltage.Therefore, in magnetic switch element 1 of the present invention, can carry out power conversion between electricity-magnetic.
Conversion layer 3 is layers as described below; For example, when conversion layer 3 and charge carrier are supplied with 4 of bodies and applied voltage, be injected into above-mentioned conversion takes place the conversion layer 3 by making any one the charge carrier that is selected from electronics and hole (hole) supply with body 4 from charge carrier.And conversion layer 3 also can be a layer as described below; For example, when applying above-mentioned voltage, to conversion layer 3 above-mentioned conversion takes place by the carrier-induced with above-mentioned any one party.About being used in the concrete material of this conversion layer 3, will narrate in the back.And, in following specification as not, put down in writing especially, " applying voltage " just is meant between conversion layer 3 and charge carrier supply body 4 and applies voltage.
This magnetic switch element 1 and past, the method that magnetospheric state is changed was compared, and can the magnetized state of magnetosphere 2 be changed by introducing magnetosphere by the magnetic field that current in wire produced.Therefore, can use magnetic switch element 1 as energy conversion efficiency height between electricity-magnetic (reduce consume electric power).
In magnetic switch element 1 of the present invention, the variation of the magnetized state of magnetosphere 2, for example, so long as the variation of the direction of magnetization of magnetosphere 2 gets final product.Intensity of variation to the direction of magnetization has no particular limits.The viewpoint of the efficient when changing with the magnetized state of reading magnetosphere 2 is reversed to preferably the direction of magnetization of magnetosphere 2 with the conversion by conversion layer 3.
An example representing the variation of the concrete magnetized state in the magnetosphere 2 with Fig. 2 A and Fig. 2 B.Represented magnetic switch element 1 in Fig. 2 A and Fig. 2 B, wiring are connected in magnetosphere 2 and supply with body 4 with charge carrier, can supply with 4 of bodies at conversion layer 3 and charge carrier and apply voltage Vg.Conversion layer 3 is to induce by normal magnetic state (paramagnetic state: the paramagnetism state) to ferromagnetism state (ferromagnetic state: the layer that the ferromagnetism state) changes by the injection of charge carrier or induction.Shown in Fig. 2 A, when Vg=0, conversion layer 3 is in normal magnetic state, and the direction of magnetization of magnetosphere 2 is towards the direction (for example, easy axis) of prior defined.At this, shown in Fig. 2 B, when conversion layer 3 and charge carrier are supplied with 4 of bodies and applied voltage Vg (Vg ≠ 0), for example, because charge carrier is injected into or responds to and is induced to conversion layer 3, conversion layer 3 will become the layer with certain direction of magnetization by normal magnetic state to the ferromagnetism state-transition.Because magnetosphere 2 and conversion layer 3 magnetic couplings, along with the conversion of conversion layer 3, the direction of magnetization of magnetosphere 2 is varied to parallel with the direction of magnetization of conversion layer 3.At this moment, if make the above-mentioned predetermined direction of magnetosphere 2 be set at anti-parallel direction, can the direction of magnetization of magnetosphere 2 be reversed with respect to the direction of magnetization of when conversion layer 3 becomes the ferromagnetism state, being found.That is, by applying the direction of magnetization counter-rotating that voltage Vg (Vg ≠ 0) can make magnetosphere 2.And, in Fig. 2 A and 2B, schematically illustrate the direction of magnetization of each layer with arrow.In following figure too.
The following describes the non-ferromagnetism-ferromagnetism conversion of conversion layer 3.Conversion between non-ferromagnetism-ferromagnetism so long as beyond the ferromagnetism (for example: antiferromagnetism, non magnetic, normal magnetic between) state and the ferromagnetism state reversibly or have the magnetic conversion that magnetic hysteresis ground changes, just have no particular limits.When applying voltage, (for example, injecting charge carrier or induction when inducing charge carrier) both can be from non-ferromagnetism to the ferromagnetism state-transition, also can be to non-ferromagnetism state-transition from the ferromagnetism state.No matter which kind of situation for example, is set if will be in the direction of magnetization of the direction of magnetization of conversion layer 3 of ferromagnetism state and the magnetosphere 2 that conversion layer 3 is in non-ferromagnetism state in advance,, can make the direction of magnetization counter-rotating of magnetosphere 2 by applying voltage.
Wherein, from changing required viewpoint of energy, the conversion between preferred normal magnetic-ferromagnetism (between normal magnetic state and ferromagnetism state reversibly or have the magnetic conversion that magnetic hysteresis ground changes) or non magnetic-ferromagnetism conversion (between non magnetic state and ferromagnetism state reversibly or the magnetic with the variation of magnetic hysteresis ground change).In above conversion, be converted to preferably with normal magnetic-ferromagnetism.If use the conversion layer 3 that this conversion takes place, because can reduce the used energy of conversion, therefore, it can become the higher magnetic switch element of conversion efficiency.
More particularly, conversion layer 3 can be from the layer of normal magnetic state to the ferromagnetism state exchange when applying voltage.And in other words, when not applying voltage, conversion layer 3 is in normal magnetic state or non magnetic state (normal magnetic state is for preferred), is applying under the state of voltage, and conversion layer 3 can be the ferromagnetism state.
Fig. 3 is the figure of the example that changes of the magnetic state of expression conversion layer 3.In Fig. 3 example, from normal magnetic state (Vg=0), along with applying voltage Vg (for example) along with charge carrier is injected into or responds to and induce, the magnetized state of conversion layer from normal magnetic state to the ferromagnetism state variation.And, on the contrary, from ferromagnetism state (Vg=V Fs) beginning, along with the reduction that applies voltage, the magnetic state of conversion layer changes to normal magnetic state from the ferromagnetism state.The variation of magnetic state can be with the linear forms as straight line A shown in Figure 3, also can be with the non-linear form as curve B, applies voltage Vg and also can have critical value.And, also can be according to when direction changes, deferring to curve B, to changing inversely the time, deferring to curve B ' such mode and the variation of magnetic state has magnetic hysteresis.
In magnetic switch element 1 of the present invention, magnetosphere 2, conversion layer 3 and charge carrier are supplied with the method to set up of body 4 and done an explanation.The concrete method to set up of above-mentioned each layer is, makes to supply with 4 of bodies at conversion layer 3 and charge carrier and can apply voltage, and, as long as conversion layer 3 can carry out magnetic coupling with magnetosphere 2, just restriction especially.Shown in Fig. 1 example, according to utilizing magnetosphere 2 and charge carrier to supply with the mode of body 4 clamping conversion layers 3, configuration transitions layer 3, magnetosphere 2 and charge carrier are supplied with body 4.And, at above-mentioned each interlayer, other layer can be set as required also.
Charge carrier is supplied with body 4 and conversion layer 3, as long as when applying voltage, for example, charge carrier is injected into or sensed inducing, with regard to not to its relative position, both contact conditions (or engagement state) etc. limit especially when joining.Wherein, when supplying with body 4 and be semiconductor as conversion layer 3 and charge carrier, the joint interface that conversion layer 3 and charge carrier are supplied with 4 of bodies is P-N engagement state or engage identical state with P-N preferably.And above-mentioned joint interface also can be the two-dimensional electron gas state.When applying voltage, usefulness consumption electric power seldom just can carry out the injection or the induction of charge carrier and induce.Wherein, preferred, follow from charge carrier and supply with the charge carrier injection of body 4 to conversion layer 3, according to the mode that the charge carrier that produces avalanche type moves, select charge carrier to supply with body 4 and conversion layer 3, make it combination.And, also can say, in magnetic switch element 1,, the magnetized state of magnetosphere 2 is changed by between the conjugant of conversion layer 3 and charge carrier supply body 4, applying voltage with such P-N joint.
Fig. 4 is another example of expression magnetic switch element 1 of the present invention.In magnetic switch element shown in Figure 41, supply with 4 of bodies at the conversion layer 3 of magnetic switch element 1 shown in Figure 1 and charge carrier and be provided with insulating barrier (I layer) 5.At this moment, by the material of selection insulating barrier 5 uses and/or the formation of insulating barrier 5, can form the higher magnetic switch element of energy conversion efficiency 1.Wherein, it is when the semiconductor of various multi-form p shapes or n shape is arranged that conversion layer 3 and charge carrier are supplied with body 4, and the joint interface between conversion layer 3 and the charge carrier supply body 4 is P-I-N engagement state or the engagement state identical with the P-I-N engagement state preferably.The I layer for example also can be a Schottky barrier (Schottky barrier).When conversion layer 3 is semiconductor, charge carrier when supplying with body 4 and being metal, preferably so-called M-I-S engagement state of joint interface or the state identical between conversion layer 3 and the charge carrier supply body 4 with the M-I-S engagement state.In this case, when applying voltage, can carry out the injection or the induction of charge carrier with consumption electric power still less and induce.Even under the situation that is provided with the I layer, preferably select charge carrier to supply with body 4 and conversion layer 3 and make it and engage, move to the charge carrier of the avalanche type of conversion layer 3 to produce from charge carrier supply body 4.And, also we can say, in having the magnetic switch element 1 that such P-I-N engages or M-I-S engages,, the magnetic state of magnetosphere 2 is changed by applying voltage with the conjugant that charge carrier is supplied with body 4 to conversion layer 3, insulator 5.About being used in the concrete material of insulator 5, will be described below.
Be used in the material of conversion layer 3, so long as the material that (for example, charge carrier is injected into or responds to when inducing) can produce the conversion of non-ferromagnetism-ferromagnetism when applying voltage gets final product.For example, conversion layer 3 contains magnetic semiconductor material and gets final product.
Narrate the material more specifically of relevant magnetic semiconductor below.
For example, from the viewpoint of the magnetic conversion of bringing out conversion layer 3, in semiconductor, preferably use compound semiconductor as the mother metal of magnetic semiconductor.Specifically, for example, with GaAs, GaSe, AlAs, InAs, AlP, AlSb, GaP, GaSb, InP, InSb, In 2Te 3, ZnO, ZnS, ZnSe, ZnTe, CdSe, CdTe, CdSb, HgS, HgSe, HgTe, SiC, GeSe, PbS, Bi 2Te 3, Sb 2Se 3, Mg 2Si, Mg 2Sn, Mg 3Sb 2, TiO 2, CuInSe 2, CuHgIn 4, ZnIn 2Se 4, CdSnAs 2, AgInTe 2, AgSbSe 2, GaN, AlN, GaAlN, BN, AlBN, GaInNAs etc. the compound semiconductor of I-V family, I-VI family, II-IV family, II-V family, II-VI family, III-V family, III-VI family, IV-IV family, I-III-VI family, I-V-VI family, II-III-VI family, II-IV-V family as mother metal usefulness, can use at least a element that will be selected from IVa family～VIII family and IVb family to add magnetic semiconductor in these compound semiconductors to.
Perhaps, also can use and have with formula Q 1Q 2Q 3The magnetic semiconductor of the composition of expression.At this, Q 1Be at least a element, the Q that is selected from Sc, Y, rare earth element (La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er), Ti, Zr, Hf, V, Nb, Ta, Cr, Ni and Zn 2Be at least a element, the Q that is selected from V, Cr, Mn, Fe, Co and Ni 3It is at least a element that is selected from C, N, O, F and S.To Q 1, Q 2, Q 3The ratio of components of element has no particular limits.
Perhaps, also can use and have with formula R 1R 2R 3The magnetic semiconductor of the composition of expression.Here, R 1Be at least a element that is selected from B, Al, Ga and In, R 2Be at least a element that is selected from N and P, R 3It is at least a element that is selected from IVa family～VIII family and IVb family.To element R 1, R 2, R 3Ratio of components have no particular limits.
Perhaps, also can use and have with formula ZnOR 3The magnetic semiconductor of the composition of expression.At this, R 3Be above-mentioned element R 3, Zn is a zinc element, O is an oxygen element.To Zn, O, R 3The ratio of components of element has no particular limits.
Perhaps, also can use and have with formula TOR 3The magnetic semiconductor of the composition of expression.At this, T is at least a element that is selected from Ti, Zr, V, Nb, Fe, Ni, Al, In and Sn, R 3Be above-mentioned element R 3, O is an oxygen element.To element T, element O and R 3The ratio of components of element has no particular limits.
And conversion layer 3 also can comprise and has use-case such as formula A XD YO ZThe oxide of the composition of representing.Here, A is at least a element that is selected from alkalinous metal (Ia family), alkaline-earth metal (IIa family), Sc, Y and rare earth element (La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er), D is at least a element that is selected from Va family, VIa family and VIIa family and VIII family, and O represents oxygen element.Above-mentioned oxide generally has crystalline texture, have center, a plurality of oxygen atom that element enters the unit cell of corresponding crystal lattice basically be trapped among the atom that is in the center around structure.
As long as x, y and z are positive numbers.Wherein, preferably satisfying the numerical value of combination shown below, can be a plurality of kinds with above-mentioned divided oxide according to its combination.Can contain the oxide that belongs to following each kind in the conversion layer 3.X in belonging to the oxide of each kind, y, z value, need not to be and satisfy value shown below (comprise and illustrating) fully, for example, can be the oxide that has been short of a part of oxygen, also can be to ooze mixed A element and D element element (for example: IVa elements, Ib～Vb family element etc.) in addition on a small quantity.And kind shown below not only is fixed as technology general knowledge in technical field of the present invention, and be for convenience, straightforward ground explanation oxide and the kind set.
-kind 1-
X, y, z are the numerical value that satisfies x=n+2, y=n+1 and z=3n+4.At this, n is 0,1,2 or 3.
Belong to the oxide of this kind, enumerating for example Sr 2RuO 4, or (La, Sr) 2CoO 4Deng the xyz index is oxide, the Sr of (214) 3Ru 2O 7, (La, Sr) 3Mn 2O 7Deng the xyz index is the oxide of (327).These oxides are the oxides that are referred to as the Ruddlesden-Popper structure.
And when n=0, the oxide of this kind also can be included on the position of elements A and dispose the D element, and/or, on the D positions of elements, disposed the oxide of A element.For example, also can comprise having the formula of using D XA YO ZThe expression composition oxide or use formula D xD yO zThe oxide of the composition of expression etc.More particularly, for example, can comprise Cr 2MgO 4Oxide, the Fe with spinelle structure of (xyz index (214)) etc. 2CoO 4, Fe 2FeO 4(that is Fe, 3O 4) oxide that does not contain elements A (xyz index (214)) that waits.
-kind 2-
X, y and z are the numerical value that satisfies formula x=n+1, y=n+1 and z=3n+5.At this, n is 1,2,3 or 4.The oxide that belongs to this kind has for example been enumerated, and has the oxide of the embedding (intercalation) of partial oxygen.
-kind 3-
X, y and z are the numerical value that satisfies formula x=n, y=n and z=3n.At this, n is 1 or 2.The oxide that belongs to this kind has been enumerated when n=1, as SrMnO 3, SrRuO 3Deng the oxide with Ca-Ti ore type crystal structure, when the n=2, as Sr 2FeMoO 6, SmBaMn 2O 6Deng the xyz index be the oxide of (226).
-kind 4-
X, y and z are the numerical value that satisfies formula x=n+1, y=n and z=4n+1.At this, n is 1 or 2.The oxide that belongs to this kind has been enumerated when n=1, as Y 2MoO 5Deng the xyz index be the oxide of (215), when the n=2, as SrBi 2Ta 2O 9Deng oxide.
-other kind-
For example when x=0, y=1 and z=1, enumerated the oxide of NiO, MnO, CoO etc.When x=0, y=n and z=n+1 (n=1), enumerated VO 2, MnO 2Deng oxide.When x=0, y=n and z=n+1, when (n=2), enumerated V 2O 3Deng oxide.When x=0, y=n and z=2n+1, when (n=2), enumerated V 2O 5Deng oxide.
Conversion layer 3 also can contain multiple above-mentioned oxide.For example can contain the oxide that has in identical kind the superlattice that structure structure cell or subsection structure cell by the different oxide of n value combine.As concrete kind, enumerated as above-mentioned kind 1 (oxide of expression Ruddlesden-Popper type structure) or kind 2 (oxide that contains the embedding of aerobic) etc.Oxide with this superlattice, the oxygen octahedra layer that contains for example single or multiple element D is separated the crystal lattice structure that forms by the more than one course of blocks that contains elements A and oxygen element.
And conversion layer 3 also can contain the material that causes metamagnetism conversion (methamagnetic transition) by the electric field that applies from the outside.For example can use La (Fe, Si) or FeRh etc.
Shape to conversion layer 3 has no particular limits.When the shape of the such layer of example shown in Figure 1, the thickness of conversion layer 3 for example, is in the scope of 0.3nm～1000nm, preferably in the scope of 1nm～100nm.And conversion layer 3 can be multilayer laminated, and thickness of each layer and contained material etc. can be according to setting arbitrarily as conversion layer 3 required characteristics.
Charge carrier is supplied with the material that body 4 uses, and is selected from metal or semi-conductive at least a material so long as contain, and has no particular limits.And, when applying voltage, preferably charge carrier injection or induction can be induced to conversion layer 3.Specifically, for example, under the state that does not apply voltage, so long as have 10 18/ cm 3More than be selected from electronics and hole the two one of the material of charge carrier get final product.More particularly, when being semiconductor, for example, can use AlN:Si etc.And charge carrier is supplied with body 4 can use simple metal, as using SrRuO 3, Pt etc. gets final product.
The shape of charge carrier being supplied with body 4 has no particular limits.As magnetic switch element, can set arbitrarily according to needed shape.For example, can be stratiform shown in Figure 1, in this case, charge carrier is supplied with the thickness of body 4, for example, is in 1nm～100 mu m ranges.
Magnetosphere 2 can carry out magnetic coupling with conversion layer 3, so long as the magnet of following the magnetic conversion magnetic state of conversion layer 3 to change gets final product, is not particularly limited.Wherein, the preferred good magnetic of soft magnetism characteristic.Specifically, preference as, contain at least a metal or alloy (for example FeCo alloy, NiFe alloy, CoNi alloy, NiFeCo alloy etc.) that is selected from Fe, Co and Ni,
Perhaps, have with U 1U 2U 3The alloy of the composition that formula is represented (at this, U 1Be at least a element, the U that is selected from Fe, Co and Ni 2Be at least a element, the U that is selected from Mg, Ca, Ti, Zr, Hf, V, Nb, Ta, Cr, Al, Si, Mg, Ge and Ga 3It is at least a element that is selected from N, B, O, F and C.For example: FeN, FeTiN, FeAlN, FeSiN, FeTaN, FeCoN, FeCoTiN, FeCo (Al, Si) N, FeCoTaN etc.),
Or, have with (Co, Fe) alloy (at this, X is at least a element that is selected from Ti, Zr, Hf, V, Nb, Ta, Cu and B) of the composition represented of X formula,
Or, have the Z of using 1Z 2The alloy of the composition that formula is represented (at this, Z 1Be at least a element, the Z that is selected from Fe, Co and Ni 2It is at least a element that is selected from Cu, Ag, Au, Pd, Pt, Rh, Ir, Ru, Os, Ru, Si, Ge, Al, Ga, Cr, Mo, W, V, Nb, Ta, Ti, Zr, Hf, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu.For example, (Co) (Co) (Co) (Co) (Co) Ru, FePt etc. of Ir, Fe (Ni) of Rh, Fe (Ni) of Pd, Fe (Ni) of Pt, Fe (Ni) of FeCr, FeSiAl, FeSi, FeAl, FeCoSi, FeCoAl, FeCoSiAl, FeCoTi, Fe (Ni)),
Or, Fe 3O 4, (at this, E is at least a element that is selected from Ni, Cu and Pt to have the alloy of the composition of representing with the EMnSb formula.For example, LaSrMnO, LaCaSrMnO, CrO 2Deng) etc. semi-metallic,
Or, have the G of using 1G 2G 3The alloy of the composition that formula is represented (at this, G 1Be at least a element, the G that is selected from Sc, Y, lanthanide series (containing La, Ce), Ti, Zr, Hf, Nb, Ta and Zn 2Be at least a element, the G that is selected from C, N, O, F and S 3Be at least a element that is selected from V, Cr, Mn, Fe, Co and Ni),
Or, have the J of using 1J 2J 3The magnetic semiconductor of the composition that formula is represented (at this, J 1Be at least a element, the J that is selected from B, Al, Ga and In 2Be at least a element, the J that is selected from V, Cr, Mn, Fe, Co and Ni 3It is at least a element that is selected from As, C, N, O, P and S.For example, GaMnN, AlMnN, GaAlMnN, AlBMnN etc.),
Or, in addition, can use, for example, sharp crystal type such as perofskite type oxide magnetic, ferrite oxide magnetic compact, carbuncle type oxide magnetic compact etc.
Shape to magnetosphere 2 has no particular limits.In the situation of the shape of layer shown in Figure 1, the thickness of magnetosphere 2 for example in 2nm～100nm scope, the scope of 2nm～50nm preferably.And magnetosphere 2 can adopt multi-layered magnetic layer (magnetic film) stacked, and thickness of each magnetosphere (each magnetic film) and contained magnetic etc. can be according to setting arbitrarily as magnetosphere 2 desirable characteristics.And, between magnetosphere 2 and conversion layer 3, only otherwise influence magnetic coupling between magnetosphere 2 and the conversion layer 3, just can dispose other layer as required.
When conversion layer 3 and charge carrier were supplied with 4 of bodies and disposed insulating barrier 5 (I layer), the material that insulating barrier 5 uses was selected from insulator and semi-conductive at least a material so long as contain, and has no particular limits.For example, can use IIa～VIa family element, lanthanide series (containing La, Ce), at least a element that is selected from IIb～IVb family of containing Zn, B, Al, Ga and Si that contains Mg, Ti, Zr, Hf, V, Nb, Ta and Cr, at least a element and the compound that is selected from F, O, C, N and B.Wherein, preferably use SiO as insulator 2, Al 2O 3, MgO etc., preferably use ZnO, SrTiO as semiconductor 3, LaAlO 3, AlN, SiC etc.
The thickness of insulating barrier 5, for example, be 0.1nm～100nm scope with interior, according to the viewpoint of tunnel insulation characterisitic, preferable range is 0.1nm～10nm.
In magnetic switch element 1 of the present invention, do not do special restriction to applying voltage method with 4 of bodies of charge carrier supply at conversion layer 3, for example, example is as shown in Figure 1 supplied with the lead that 4 of bodies (or supply with body 4 at conversion layer 3 and charge carrier) apply voltage as long as be connected magnetosphere 2 and charge carrier.And, as shown in Figure 5, can be also to contain the magnetic switch element 1 that is useful on the electrode 6 that applies voltage.In magnetic switch element 1 shown in Figure 5, the electrode 6 that applies voltage is by self and conversion layer 3 charge carrier to be supplied with the form that body 4 is clipped in the middle to be configured.In this magnetic switch element 1, can more stably apply voltage.And, in example shown in Figure 5, only supply with the side and disposed electrode 6 at charge carrier, also can be magnetosphere 2 side configured electrodes 6 (for example, electrode 6 is connected is configured with magnetosphere 2).And when magnetosphere 2, when charge carrier supply body 4 is metal, magnetosphere 2, charge carrier are supplied with body 4 and self can be played a role as electrode.
The material that electrode 6 uses is so long as conductive material just has no particular limits it.Wherein, specifically, for example, can use Au, Cu, Al, Pt etc.
Fig. 6 is the schematic diagram that another example is used for representing magnetic switch element 1 of the present invention.In magnetic switch element shown in Figure 61, insulating barrier 7 is configured in electrode 6 and charge carrier is supplied with between the body 4.In this magnetic switch element 1, owing to can reduce the electric power that makes conversion layer 3 that the magnetic conversion take place (that is, for example, charge carrier being injected or induction is induced to the used electric power of conversion layer 3), therefore, can make the higher magnetic switch element of energy conversion efficiency 1.And, when between electrode 6 and charge carrier supply body 4, disposing insulating barrier 7, as shown in Figure 7, also can become the magnetic switch element 1 of each layer of configuration in the face of insulator 7.
The material that insulating barrier 7 uses can be the material identical materials of using with above-mentioned insulating barrier 5.For example, the thickness of insulating barrier 7 is in 0.1nm～100 mu m ranges, when being configured between electrode 6 and the charge carrier supply body 4, is preferably the scope of 0.1nm～100nm.
Magnetic switch element 1 of the present invention can and then comprise the magnetic field generating unit that applies magnetic field to the one deck at least that is selected from conversion layer 3 and magnetosphere 2.When conversion layer 3 ferromagnetism occurs by its magnetic conversion, when the saturation magnetization in the process of conversion is in weak stage, owing to can make the magnetized state (for example, the direction of magnetization) of conversion layer 3 stable, so it can be used as the higher magnetic switch element of energy conversion efficiency 1 and uses.Fig. 8 A～8C is illustrated in the example of the magnetic conversion of conversion layer 3 in this magnetic switch element.
Magnetic switch element 1 shown in Fig. 8 A～8C is identical with magnetic switch element 1 shown in Figure 6.Shown in Fig. 8 A, when applying voltage Vg=0, conversion layer is in normal magnetic state.When supplying with body 4 at charge carrier and apply voltage Vg (Vg ≠ 0) with 3 of conversion layers, for example,, injects charge carrier to conversion layer 3 by being supplied with body 4 from charge carrier, and conversion layer 3 begins to take place magnetic and changes (Fig. 8 B).After the beginning soon the saturation magnetization of conversion layer 3 also a little less than, conversion layer 3 also is in not to be had to find in the state of clearer and more definite magnetized state (for example, the direction of magnetization).At this moment, for the magnetized state after the conversion that realizes conversion layer 3, if apply magnetic field H Ex(for example, if conversion layer 3 is applied magnetic field in the direction identical with the direction of magnetization of the magnetosphere 3 that produced of back that changes), in transfer process early stage, can finish the variation (Fig. 8 C) of the magnetized state of the magnetic conversion of conversion layer 3 and magnetosphere 2.That is, can reduce the magnetized state that makes magnetosphere 2 energy needed that changes.
The magnetic field H that applies by the magnetic field generating unit ExDirection, (for example, the identical direction of the direction of magnetization that is produced with conversion layer 3) gets final product so long as the direction that the magnetic state that is for example produced when becoming the ferromagnetism state at conversion layer 3 is augmented.And, to magnetic field H ExIntensity have no particular limits, can be according to setting arbitrarily as the characteristic of magnetic switch element 1.For example, 4 * 10 2～4 * 10 5The scope of A/m.And, preferably with magnetic field H ExPut on conversion layer 3.
The magnetic field generating unit so long as apply at least one layer that is selected from conversion layer 3 and magnetosphere 2, is not just done special restriction to its structure, formation etc.For example, the magnetic field generating unit can comprise at least one that is selected from ferromagnetism body, coil and the lead.When comprising at least one that is selected from coil and the lead, can be only when the magnetic conversion takes place in conversion layer 3 needed during in apply magnetic field.When having the ferromagnetism body, can save the electric power that is used to apply magnetic field.
Fig. 9 is another example of magnetic switch element of the present invention.Magnetic switch element 1 shown in Figure 9 is on the magnetosphere 2 of magnetic switch element 1 shown in Figure 6, disposes the magnetic field generating unit 8 that insulation division 9 is clipped in the middle and is made of lead.In other words, supply with body 4 by utilizing magnetic field generating unit 8 and charge carrier, the mode that is selected from one deck at least of conversion layer 3 and magnetosphere 2 according to clamping is disposed.As shown in Figure 9, to the allocation position of magnetic field generating unit 8, have no particular limits so long as to be selected from conversion layer 3 and magnetosphere 2 at least one deck can apply the position in magnetic field, just it is done special restriction.Insulation division 9 is not so long as the insulating properties material is just done special restriction to it.For example can use SiO 2Deng inorganic insulation thing, resin etc.
In magnetic switch element 1 of the present invention, can and then comprise the test section of the magnetized state that detects magnetosphere 2.By so configuration detection portion, can make the power conversion of not only carrying out between electricity-magnetic, also can carry out the magnetic switch element of power conversion between magnetic-electricity.Specifically, for example, can make and in advance electric signal to be preserved as magnetic information, be transformed to electric signal in case of necessity and the element read.When using this element, for example, the circuit 11 that forms as shown in figure 10 gets final product.Circuit 11 shown in Figure 10 is divided into magnetic switch element 1 test section 12, comprises that conversion layer 3 and charge carrier supply with the converter section 13 of body 4, and, according to can on converter section 13, applying voltage Vg, and, according to can be by measuring voltage V by test section 12 DAnd electric current I DAnd the mode of measuring the resistance value of test section connects up.
If test section can detect the variation of the magnetized state of magnetosphere 2, just its structure and formation etc. are not limited especially.For example, so long as can detect the variation of the magnetized state of magnetosphere 2 and get final product as the test section of electric resistance value.As such test section, enumerated the test section that for example comprises magneto-resistance effect element (MR element).
Figure 11 represents to comprise an example of the magnetic switch element 1 of this test section.Magnetic switch element 1 shown in Figure 11 is on the magnetosphere 2 of magnetic switch element shown in Figure 6, carries out stacked with the order of free magnetic layer 14, nonmagnetic layer 15, fixed magnetic layer 16 and electrode 6.Test section 12 comprises the MR element 17 that contains free magnetic layer 14, nonmagnetic layer 15, fixed magnetic layer 16.Free magnetic layer 14 and magnetosphere 2 magnetic couplings that converter section 13 is contained are accompanied by the variation of the magnetized state of magnetosphere 2, and the magnetized state of free magnetic layer 2 can change.Magneto-resistance effect element, generally have the structure with the stacked pair of magnetic layers of mode in the middle of nonmagnetic layer is placed, it is according to the variation of the direction of magnetization of the relatively easy free magnetic layer of the variation of the direction of magnetization and the direction of magnetization relative angle that the direction of magnetization became of the fixed magnetic layer of difficulty and the different element of resistance relatively.Given this, shown in the diagram 11 in the magnetic switch element 1, because the resistance value of MR17 element changes according to the magnetized state of magnetosphere 2, so, can detect the magnetized state of magnetosphere 2 by test section 12.
Free magnetic layer 14 and fixed magnetic layer 16 use magnetic to get final product.But owing to be necessary to make free magnetic layer 14 1 sides to compare with fixed magnetic layer 16, the variation of its direction of magnetization is relatively easy, so, the preferred different magnetic of operating characteristic in each layer.
Free magnetic layer 14 for example can use and magnetosphere 2 material therefor identical materials.Wherein, preferably use the magnetic material of excellent in soft magnetic properties.The thickness of free magnetic layer 14 is for example in 2nm～50nm scope.
Fixed magnetic layer 16, for example, as long as the big magnetic of coercive force is compared in use with free magnetic layer 14.Specifically, for example, can use high confining force magnetic, lamination ferrite magnetic body or, the duplexer of antiferromagnetism body and/or lamination ferrite magnetic body and ferromagnetism body.When using above-mentioned duplexer, stacked ferrite magnetic body or ferromagnetism dignity are configured to nonmagnetic layer 15.
As high confining force magnetic, for example, can use the material of confining force more than 100Oe (100 oersted) of CoPt, FePt, CoCrPt, CoTaPt, FeTapt, FeCrPt etc.As the antiferromagnetism body, for example, can use the Mn of PtMn, PtPdMn, FeMn, IrMn, NiMn etc. is the antiferromagnetism body.As stacked ferrite magnetic body, for example, can carry out stackedly to the pair of magnetic film, nonmagnetic film is sandwiched in therebetween, form the duplexer of magnetic film and nonmagnetic film.As the magnetic film that is used in the lamination ferrite magnetic body, for example, can use Co or contain FeCo, CoFeNi, CoNi, the CoZrTa of Co, the alloy of CoZrB, CoZrNb etc.As the nonmagnetic film that is used for the lamination ferrite magnetic body, for example, can use for example Cu, Ag, Au, Ru, Rh, Ir, Re, Os etc. or this type of metal alloy, oxide etc.The ferromagnetism body is had no particular limits, for example, can use and magnetosphere 2 identical materials.In addition, can use the magnetic material that in the MR element, generally uses.And, the thickness of fixed magnetic layer 16 is also had no particular limits, for example, in 2nm～100nm scope.
For the direction of magnetization of fixed magnetic layer 16 is fixed, for example, can when apply magnetic field, a direction carry out the film forming of fixed magnetic layer, also can when applying magnetic field after the fixed magnetic layer film forming, heat-treat.With fixed magnetic layer 16 during as the duplexer of ferromagnetism body and antiferromagnetism body, for example, have the antiferromagnetism body of a direction anisotropic (anisotropy inone direction) by use, utilize magnetic conversion combination, the fixedly direction of magnetization of ferromagnetism body.
Non-ferromagnetic layer whose 15 can by insulating material form the layer, also can by electric conducting material forms layer.That is, MR element 17 can be a so-called TMR element (tunnel magnetoresistive effect element), also can be the MR element of GMR element (huge magneto-resistance effect element).According to the viewpoint of the energy conversion efficiency of test section, nonmagnetic layer 15 preferably constitutes, is tunnel insulation layer by the materials of insulating properties.Be used in the conductive material of nonmagnetic layer 15, for example, can use Cu, Ag, Au, Ru etc., in the case, the thickness of nonmagnetic layer 15 is for example in 0.1nm～10nm scope.The material that is used for the insulating properties of nonmagnetic layer 15 for example, can use oxide, nitride, nitrogen oxide of Al, Mg, Zu etc. etc., in the case, and the thickness of nonmagnetic layer 15, for example, in 0.1nm～10nm scope.
And free magnetic layer 14 can contain above-mentioned stacked ferrite magnetic body.Wherein, when component size was submicron-scale, free magnetic layer 14 preferably contained stacked ferrite magnetic body.Even the counter magnetic field composition that element is produced when the miniaturization can be reduced size of component is being done hour, also can suppress the deterioration of the soft magnetism characteristic of free magnetic layer 14.
Figure 12 is another example of magnetic switch element of the present invention.In magnetic switch element shown in Figure 12 1, comprise the test section 12 of the magnetized state that detects magnetosphere 2.Test section 12 comprises fixed magnetic layer 16 and nonmagnetic layer 15, according to the mode that can together nonmagnetic layer 15 be clipped in the middle with magnetosphere 2, configuration nonmagnetic layer 15 and fixed magnetic layer 16.Element shown in Figure 12 is by magnetosphere 2, nonmagnetic layer 15 and fixed magnetic layer 16, has formed magnetoresistive element portion (MR element portion) 19, can detect the variation of the magnetized state of magnetosphere 2 according to the variation of the resistance of MR element portion 19.That is, not only example makes MR element 17 be configured on the magnetosphere 2 like that as shown in figure 11, and by forming the MR element portion 19 that comprises magnetosphere 2 as free magnetic layer, can detect the variation of the magnetized state of magnetosphere 2.
And, as shown in figure 12, with magnetic switch element 1 configured in one piece on substrate 18.For example, substrate 18 can be the substrate that generally is used for semiconductor element etc.For example, can use glass substrate, SiO 2Substrate, sapphire substrate, MgO substrate, SiTiO 3Deng.And, in magnetic switch element shown in Figure 12 1,, disposed layer insulation portion 10, by the width (h that Figure 12 represents that makes layer insulation portion 10 in order to prevent the leakage of electrode 6 and each layer 1, h 2) change, can control the distance between charge carrier supply body 4 and the electrode 6.That is, by the width of insulation division between key-course 10, characteristic that can control element (for example, making conversion layer 3 that the threshold value etc. of the voltage Vg of magnetic conversion take place).The width h of layer insulation portion 10 1, h 2Be based on and apply voltage Vg and change, for example voltage Vg is when 50V is above, in 1nm～1000nm scope.As Vg during in 1～50V left and right sides scope, according to the viewpoint of energy conversion efficiency, preferably within 1nm～500nm left and right sides scope.
Layer insulation portion 10 is if insulating material just has no particular limits it.For example can use Al 2O 3, SiO 2Deng resin, the CaF of oxide, polyimides etc. 2Deng.The width of layer insulation portion 10 preferably uses Al when 100nm is above 2O 3Deng oxide.When 500nm is above,, preferably use resinaes such as polyimides according to the viewpoint of the simplicity of manufacturing processing technic.
Constitute the formation of each layer of magnetic switch element, for example can use as pulsed laser deposition method (PLD), ion beam deposition method (IBD), become ion beam, the various sputtering methods that reach RF, DC, electron cyclotron resonace (ECR), helicon (helicon), inductively coupled plasma (ICP), opposed target etc., molecular beam epitaxy (MBE), ion plating method etc.And, except using these PVD methods, also can use CVD method, galvanoplastic, sol-gal process etc.When needs carry out microfabrication, can use the method for generally using in semiconductor machining, the magnetic head making processing etc. to make up.Specifically, ion can be ground, the etching and processing method of reactive ion etching (RIE), FIB focused ion beam physics such as (Focused Ion Beam) or chemistry, be used for steeper that Micropicture forms, used the photoetching technique etc. of electron beam (EB) method etc. to be used in combination.
Below magnetic storage is described.
Magnetic storage of the present invention comprises: have above-mentioned test section a plurality of magnetic switch elements, be used for the information record of in magnetic switch element recorded information with conductor lines, be used for playback record and read in the information of the information of element and use conductor lines.Figure 13 is an example of the such magnetic storage of expression.
In magnetic storage shown in Figure 13, magnetic switch element 1 is to be configured in first call wire (word line) 101 that is made of Cu or Al and the intersection point place of second call wire (bit line) 102 rectangularly.Simultaneously, magnetic switch element 1 is configured in the intersection point place of second call wire 102 and the sense wire (sense line) 103 that is made of Cu or Al rectangularly.Word line 101 and bit line 102 are equivalent to information record lead.Bit line 102 and sense line 103 are equivalent to information and read and use lead.Magnetic switch element 1 comprises that the MR element portion is as test section.
As shown in figure 14, word line 101 is to supply with body 4 by means of the charge carrier that is comprised in electrode 6 and insulating barrier 7 and the magnetic switch element 1 to be connected.Sense wire 103 is to be connected by means of the fixed magnetic layer 16 in the test section that is comprised in electrode 6 and the magnetic switch element 1.Bit line 102 is connected with magnetosphere 2.
As shown in figure 13, by applying voltage Vg at word line 101 and 102 of bit lines, recorded information on the magnetosphere 2 of magnetic switch element 1.Information is recorded on the magnetic switch element 1 (Figure 13 is the magnetic switch element 1a that disposes in the position that word line 101a and bit line 102a intersect) of the position that the word line 101 that is configured in [leading to] state and bit line 102 intersect.At this moment, can be with sense wire 103 as the magnetic field generating unit (boost line) that magnetic field H ex is put on magnetic switch element.When using as the magnetic field generating unit, as shown in figure 13, sense wire (boost line) 103a is in the state of [leading to] and gets final product.And, also boost line and sense wire can be disposed respectively.
When the information of playback record in magnetic switch element 1, as shown in figure 15, the bit line 102a and the sense wire 103a that can intersect by means of the magnetic switch element 1a with recorded information make the test section of magnetic switch element 1a have sense current to pass through.Because the resistance of magnetic switch element 1 contained MR element portion changes according to information, so by detecting the voltage V that is produced between bit line 102a and sense wire 103a DJust can sense information.
And, reach in the switching of " breaking " state in word line 101, bit line 102 and sense wire 103 " leading to ", can use the non-linear element of switch element as FET etc., piezo-resistance, tunnel element etc. and rectifier cell etc.
(embodiment)
Describe the present invention in detail with embodiment below.And the present invention also is not limited only to this example.
(embodiment 1)
Use MBE (molecular beam epitaxy) method, made magnetic switch element (sample 1) with film formation of showing down.Sample 1 makes the represented shape of Figure 12.
-sample 1-
Sapphire substrate/AlN (500)/AlN:Si (100)/AlMnN:Si (10)/CoFe (10)/AlO (1)/CoFe (10)/PtMn (25)/Ta (3)/Cu (100)/Ta (25), at this, the thickness of the numeric representation film in the bracket.Unit is nm, below represents the thickness of film with the same manner.
AlN layer on the sapphire substrate is that insulating barrier 7, AlN:Si layer are that charge carrier is supplied with body 4, the AlMnN:Si layer is that conversion layer 3, CoFe layer are magnetospheres 2.AlO is that nonmagnetic layer 15, CoFe/PtMn layer are the fixed magnetic layers 16 that antiferromagnetism body (PtMn) is laminated.As the PtMn layer of antiferromagnetism body by magnetic coupling with the CoFe layer of adjacency as fixed magnetic layer.The Ta/Cu/Ta duplexer is the electrode 6 on the fixed magnetic layer 16.Other electrode 6 too.And the directional index of sapphire substrate is (0001).
The manufacture method of interpret sample 1.
On sapphire substrate, make the AlN layer earlier.At this moment, the temperature of substrate greatly about 500～600 ℃ of scopes with interior (based on 550 ℃).In the making of AlN layer, be on substrate, to carry out the Al layer in advance, by pecvd nitride the AlN layer is made in the nitrogenize of Al layer.Secondly, on the AlN layer, stacked with carrying out under the state of AlN:Si/AlMnN:Si multilayer film in substrate temperature remains on 200～300 ℃ of scopes (based on 250 ℃).Once more, on the AlMnN:Si layer, when the temperature of substrate remains on the state of (based on room temperature) in ℃ scope of room temperature～200, carry out the CoFe layer stacked.
As the AlMnN:Si layer of conversion layer, its ratio of components is Al 08Mn 02N:Si.And the Mn amount in the AlMnN is about 0.001 atom %～0.25 atom %.When Mn is in above-mentioned scope, confirmed that with other method the reappearance of normal magnetic-ferromagnetism conversion is best.And the AlMnN:Si layer is not having as charge carrier to inject or induction is induced under the state of electronics and shown as normal magnetic, is injecting or induction has been induced under the state of electronics and shown as ferromagnetism.
Miserable assorted amount as the Si in the AlN:Si layer of charge carrier supply body is 0.1 atom %.At this moment, measuring the contained carrier number of affirmation AlN:Si layer according to the hole, is 10 18/ cm 3More than.The addition of Si equally also is 0.1 atom % in the conversion layer.And, confirmed when in the scope of addition about 0.001 atom %～0.3 atom % of Si that with other method the characteristic of supplying with body as charge carrier is best.
Secondly, on the AlN:Si layer, carry out AlO layer, CoFe layer and PtMn layer stacked.Value in the AlO layer bracket is the design thickness sum of the Al before the oxidation processes.In fact, be with after the thickness film forming of Al with 0.3nm～0.7nm, carry out repeatedly under the environment of oxygen that oxidation makes containing.
Once more, use photoetching process, integral body is carried out microfabrication by shape shown in Figure 12.And the component size (being the size that charge carrier is supplied with body 4, conversion layer 3 and magnetosphere 2) that applies the field of voltage Vg is about 1.5 μ m * 3 μ m from the direction perpendicular to the interarea of element.Afterwards among the embodiment, the size in field that equally also will apply voltage Vg is as size of component.Once more, the Ta/Cu/Ta layer is carried out making electrode behind the lamination, last, configuration Al 2O 3The layer insulation portion 10 that constitutes and make sample 1.The width of layer insulation portion 10 is 300nm.
And the film forming of each layer is when switching the layer of film forming, will carry in a vacuum, avoids as much as possible exposing in atmosphere.And, the moment after the PtMn layer being carried out multilayer film stacked, in the magnetic field of 280 ℃ temperature, 5KOe, heat-treat, give the processing of a direction anisotropic (anisotropy in one direction), in the following embodiments too.And element also can be heat-treated in above-mentioned magnetic field after microfabrication.
At first, to the magnetic switch element of such making, measure the temperature range of the magneto resistance effect that detects test section.Whether being confirmed to be by on element of magnetic resistance effect apply magnetic field with the scope of ± 5kOe, change by the resistance of measuring test section and carry out.
Its result is, confirmed at least from 4K (absolute temperature) can detect the magnetic resistance effect in the temperature range of 370K.
Secondly, magnetic switch element is remained on the temperature of 23K, supply with between body and the conversion layer at charge carrier and apply voltage.At first, according to improve with respect to conversion layer charge carrier supply with body current potential mode and apply voltage and (0～200V) time, do not find that any variation takes place the resistance of test section.Secondly, according to reduce with respect to conversion layer charge carrier supply with body current potential mode and apply voltage (0～200V) time, electronics is supplied with body from charge carrier and is moved to conversion layer, has obtained about 30% the magneto resistive ratio as the change in resistance index of test section (MR than).The change in resistance of test section is to begin under the state that applies about 20V voltage, when applying about 120V voltage, has acquired maximum MR ratio.Apply voltage when the above scope of 120V, the MR of acquisition presents saturated tendency than almost not changing.
And, can try to achieve the MR ratio with following method.The maximum resistance of gained test section is with R when applying voltage MaxExpression, minimum resistance are with R MinExpression.At this moment, the MR ratio is the numerical value according to formula (1) gained.
MR is than (%)=(R MAX-R MIN)/R MIN* 100 (%) (1)
In addition, constitute the situation of above-mentioned TMR element or GMR element at test section, when (parallel), resistance value was minimum (R when the direction of magnetization of free magnetic layer and fixed magnetic layer was identical MIN), along with both direction of magnetization begins to depart from from equidirectional, it is big that resistance value will become.
And, in sample 1, used insulating barrier/charge carrier to supply with body/conversion layer and nitride simultaneously, with this type of same based material (for example, all be nitride or all be oxide etc.) be used in charge carrier when supplying with body and conversion layer, each interlayer is not easy to occur the aspect disorder, as magnetic switch element, present the good tendency of its characteristic.This tendency is arranged in the following embodiments too.
And, the AlMnN:Si layer that in sample 1, uses as conversion layer, using Ga 1-αMn αN:Si layer, (Ga 0.5Al 0.5) 1-αMn αN:Si layer, (Al 0.9B 0.1) 1-αMn αThe situation of N:Si layer etc. has also been carried out same element confirming operation.α is the numerical value that satisfies 0.01≤α≤0.2.The condition of making of element is identical with sample 1.
And, except supply with the AlN:Si layer that body uses in sample 1 as charge carrier, to the situation of using AlN:Ge layer or GaN:Si layer carried out too same element move really with.
And embodiment 1 makes sample by the MBE method, in addition, also can make same sample with pulsed laser deposition method (PLD), magnetron sputtering method and electron beam (EB) vapour deposition method.And the result of these samples is also identical with sample 1.
(embodiment 2)
Embodiment 2, are the magnetic switch elements of making in embodiment 1 by using (sample 1), made Figure 13 and magnetic storage shown in Figure 15, and its performance is tested and assessed.But substrate is the substrate of CMOS, and the arrangement of element is to become 1 piece with 16 * 16 element arrangements, amounts to 8 pieces.
At first, on the CMOS substrate, constitute same magnetic switch element with the embodiment 1 the same film that has with sample 1 of having made.At first, on the CMOS substrate, as magnetic switch element with rectangular configuration FET, thereon between configuration layer insulation division and make its flattening surface with CMP after, be configured by rectangular the magnetic switch element of sample 1 is corresponding with FET.Disposed after the magnetic switch element, under 400 ℃ condition, carried out hydrogen sintering (hydrogensintering) and handle.And 1 element is as the analog element that is used to eliminate its connection resistance, element most low-resistance, FET resistance etc. in each piece.And, word line, bit line and sense wire etc. all use Cu, its separately the size of element be 0.5 μ m * 0.7 μ m.TEOS interlayer contact layer being used for the CMOS substrate is connected with magnetic switch element has used Pt/SrRuO 3Layer.
For the magnetic storage of such making, by between word line and bit line, applying voltage Vg, the conversion layer generation magnetic of each 8 element of each piece changed, write down signal.Secondly, each element of each piece is made the gate turn-on of FET, in element, flow through read current.At this moment, will utilize comparator and aanalogvoltage to compare at the voltage that bit line, element and FET produced in each piece, and when having read the output of element separately, can access the output of this element, and confirm possibility as the magnetic storage action.
And then, when applying Vg,,, also can obtain the element output of each element, and confirm can move as magnetic storage even on conversion layer, apply magnetic field by flowing through electric current at sense wire.
And, same when formation has the magnetic storage of circuit shown in Figure 16, confirmed to use magnetic switch element of the present invention to constitute the magnetic storage of can resetting.
But circuit is a circuit of having used the basic circuit that is used in programmable storage resetting memory that is equipped with memory function or programmable gate array (FPGA) etc. as shown in figure 16.In Figure 16, R cBe the connection resistance of FET2, R VIt is resistance as the MR element portion of the test section of magnetic switch element.R iIt is the cloth line resistance.At this, voltage V 0With voltage V iBetween relation generally be:
V 0＝V i×(R V+R c)/(R i+R v+R c)。
About the resistance of MR element portion, the direction of magnetization of the magnetization side of magnetosphere 2 and fixed magnetic layer 16 is R when being parallel to each other Vp, be R when in the other direction parallel mutually Vap, resistance maximum when opposite direction is parallel mutually.At this moment, the grid voltage V of load circuit 104 dAnd the pass between the resistance value of MR element portion is:
V d＜V o=V i* (R Vap+ R c)/(R i+ R Vap+ R c) and,
V d＞V o=V i* (R Vp+ R c)/(R i+ R Vp+ R c) time,
But can be used as non-volatile resetting memory.
And, for example, when using logical circuit as load circuit 104, as the Nonvolatile programmable element, and, with load circuit 104 during as the display circuit device, non-volatile preservation element as rest image etc. can use magnetic switch element of the present invention.And, but application integration has the system LSI of a plurality of like this functions.
(embodiment 3)
With PLD (pulsed laser deposition method), made magnetic switch element (sample 2) with following film formation.Figure 12 represents the shape of sample 2.
-sample 2-
Sapphire substrate/AlN (500)/AlN:Si (100)/AlCoN:Si (10)/NiFe (10)/AlO (1)/CoFe (10)/PtMn (25)/Ta (3)/Cu (100)/Ta (25)
AlN layer on the sapphire substrate is an insulating barrier, and the AlN:Si layer is that charge carrier is supplied with body, the AlCoN:Si layer is that conversion layer, NiFe layer are magnetospheres.AlO is a nonmagnetic layer, and CoFe/PtMn is the fixed magnetic layer that is laminated with antiferromagnetism body (PtMn).As the PtMn layer of antiferromagnetism body utilize magnetic coupling with the CoFe layer of adjacency as fixed magnetic layer.The Ta/Cu/Ta duplexer is the electrode on the fixed magnetic layer.Other electrode too.And the orientation index of sapphire substrate is (0001).
The manufacture method of interpret sample 2.
At first, on sapphire substrate, make the AlN layer.At this moment, about 600 ℃～800 ℃ scope (mainly being 650 ℃) of the temperature of substrate.The making of AlN layer is the same with embodiment 1.Secondly, on the AlN layer, the AlN:Si/AlCoN:Si multilayer film is remained at substrate temperature carry out under the state of 400 ℃～600 ℃ scopes (mainly being 550 ℃) stacked.Once more, on the AlMnN:Si layer, in substrate remains on the scope of indoor temperature～200 ℃, carry out the NiFe layer stacked under the state of (mainly being room temperature).
The ratio of components of conversion layer AlCoN:Si is Al 0.8Co 0.2N:Si.And the content of Mn is about 0.001 atom %～0.25 atom % among the AlCoN.The content of Mn has confirmed that with other method the reproducibility of normal magnetic-ferromagnetism conversion is best in above-mentioned scope the time.And, do not have to inject or induction induce electronics as the state of charge carrier under the AlCoN:Si layer show as normal magnetic, and injecting or induction is induced under the state of electronics and shown as ferromagnetism.
The addition of Si is 0.1 atom % in the AlN:Si layer of supplying with body as charge carrier.The addition of Si also is 0.1 atom % in conversion layer.
AlO layer, CoFe layer, PtMn layer stacked uses the method identical with embodiment 1 to carry out.The size of element is 1.5 μ m * 3 μ m.
To the magnetic switch element of making of the method, initial, with the embodiment 1 the same temperature range of measuring the magnetic resistance effect that detects test section.
As a result, confirmed at least can to detect the magnetic resistance effect with interior in the temperature range of 4K～370K.
Secondly, when magnetic switch element is remained on 100K, between charge carrier supply body and conversion layer, apply voltage.At first, according to improve the mode that charge carrier is supplied with the current potential of body with respect to conversion layer, apply voltage and (0～80V) time, do not find that the resistance value of test section has any variation.Secondly, in mode according to the current potential that reduces charge carrier supply body with respect to conversion layer, (0～80V) time, electronics is supplied with body from charge carrier and is moved to conversion layer, has obtained about 10% MR ratio as the magneto resistive ratio of the resistance change index of test section (MR than) to apply voltage.The resistance change of test section is to begin under the state that applies about 18V voltage, when applying 50V voltage, has obtained maximum MR ratio.Apply the almost not variation of MR ratio that voltage obtains when the above scope of 50V, presented saturated tendency.
(embodiment 4)
With PLD method and sputtering method, made have following shown in the magnetic switch element (sample 3) that constitutes of film.Sample 3 is shapes shown in Figure 12.
-sample 3-
Glass substrate/ITO/Al 2O 3(100)/ZnNiO (15)/ZnCoO (5)/MnZnO (20)/CoFe (5)/NiFe (2)/Ru (0.7)/NiFe (5)/AlO X(1)/CoFe (15)/PtMn (25)/Ta (5)/Cu (100)/Ta (10)
(tin indium oxide: Indium Tin Oxide) layer is electrode, Al to ITO on glass substrate 2O 3Layer is an insulating barrier, and ZnNiO is that charge carrier is supplied with body, the ZnCoO/MnZnO layer is that conversion layer, CoFe/NiFe/Ru/NiFe layer are the magnetospheres that contains the NiFe/Ru/NiFe layer as stacked ferrite magnetic body.AlO XBe nonmagnetic layer, CoFe/PtMn is the fixed magnetic layer that antiferromagnetism body (PtMn) is carried out stacked formation.As the PtMn layer of antiferromagnetism body be utilize magnetic coupling with the CoFe layer of adjacency as fixed magnetic layer.The Ta/Cu/Ta duplexer is the electrode on the fixed magnetic layer.Except the electrode (ITO layer) that disposes between substrate and the charge carrier supply body, other electrode too.
The manufacture method of interpret sample 3.
At first, on glass substrate, made ITO/Al with the PLD method 2O 3The multilayer film of/ZnNiO/ZnCoO/ZnMnO.At this moment, the temperature of substrate approximately is with interior (based on 600 ℃) 450 ℃～650 ℃ scopes.During by PLD method film forming, the dividing potential drop of oxygen is arranged on 1 * 10 -1Below the holder (Torr).The ratio of components of supplying with the ZnNiO layer of body as charge carrier is Zn 0.5Ni 0.5O.Ratio of components as the ZnCoO/ZnMnO layer of conversion layer is Zn 0.75Co 0.25/ Zn 0.75Mn 0.25O.And the ZnCoO/ZnMno layer is not having as charge carrier to inject or induction is induced under the state of electronics and is normal magnetic, and is injecting or induction is induced under the state of electronics and is ferromagnetism.
Secondly, on the ZnMnO layer, carry out last layers such as CoFe/NiFe/Ru/NiFe layer stacked with sputtering method.Stacked ferrite magnetic body is that purpose disposes with the magnetization change of carrying out smoothly in the magnetosphere.In sample 3, pass through CoFe/NiFe/Ru/NiFe/AlO X/ CoFe/PtMn multilayer film has formed the MR element portion as test section.And, in sample 3, can think that the CoFe layer that will join with the ZnMnO layer is that magnetosphere, NiFe/Ru/NiFe multilayer film are as free magnetic layer.When considering like this, can pass through NiFe/Ru/NiFe/AlO X/ CoFe/PtMn multilayer film forms the MR element as test section.
AlO XThe layer stacked, with embodiment 1 the same carrying out, the size of the element of making is about 0.5 μ m * 1.5 μ m.And, at AlO XX in the layer is the numerical value that satisfies 1.2≤X≤1.6 scopes.
For the magnetic switch element of making of the method, initial, with the embodiment 1 the same temperature range of measuring the magnetic resistance effect that detects test section.
As a result, confirmed in 4K～370K temperature range, can detect the magnetic resistance effect at least.
Secondly, magnetic switch element is remained on 50K, supply with between body and the conversion layer at charge carrier and apply voltage.At first, according to improve the mode that charge carrier is supplied with the current potential of body with respect to conversion layer, apply voltage and (0～180V) time, do not find that the resistance value of test section has any variation.Secondly, in mode according to the current potential that reduces charge carrier supply body with respect to conversion layer, (0～180V) time, electronics is supplied with body from charge carrier and is moved to conversion layer, has obtained about 10% MR ratio as the magneto resistive ratio of the resistance change index of test section (MR than) to apply voltage.The resistance change of test section is to begin under the state that approximately applies 20V voltage, when applying 50V voltage, has obtained maximum MR ratio.The MR that obtains when applying the scope of voltage more than 50V presents saturated tendency than almost not changing.
And, by sample 3, confirmed can use the ITO electrode as the electrode that the injection charge carrier is used.Given this, can think that magnetic switch element of the present invention can be applied to use on equipment of TFT (thin-film transistor) part etc.For example, use magnetic switch element of the present invention or used the magnetic storage of magnetic switch element of the present invention by matrix portion at the TFT liquid crystal, can be with the matrix image information storage in nonvolatile magnetic memories portion.For example, can constitute the image demonstration body of moment connection.
(embodiment 5)
Made magnetic switch element (sample 4) with following film formation of the PLD method.Figure 12 represents the shape of sample 4.
-sample 4-
MgO substrate/PrBa 2Cu 3O 7(300)/(Sr, Ca) RuO 3(50)/(Nd, Sr) 2MnO 4(10)/NiFe (10)/AlO (1)/CoFe (10)/PtMn (25)/Ta (3)/Cu (100)/Ta (25)
PrBa on the MgO substrate 2Cu 3O 7Layer is insulating barrier, (Sr, Ca) RuO 3Layer be charge carrier supply with body, (Nd, Sr) 2MnO 4Layer is that conversion layer, NiFe layer are magnetospheres.AlO is that nonmagnetic layer, CoFe/PtMn layer are the fixed magnetic layers that is laminated by antiferromagnetism body (PtMn).The Ta/Cu/Ta duplexer is the electrode on the fixed magnetic layer.Other electrode too.And the orientation index of MgO substrate is (100).
The manufacture method of interpret sample 4.
At first, on the MgO substrate, make PrBa 2Cu 3O 7/ (Sr, Ca) RuO 3/ (Nd, Sr) 2MnO 4Duplexer.At this moment, the temperature of substrate approximately is in 600～900 ℃ scope (based on 750 ℃).
Supply with (Sr, Ca) RuO of body as charge carrier 3The ratio of components of layer is Sr 0.8Ca 0.2RuO 3As conversion layer (Nd, Sr) 2MnO 4The ratio of components of layer is Nd 0.25Sr 1.75MnO 4And, as conversion layer (Nd, Sr) 2MnO 4Layer, be normal magnetic do not having injection or induction to induce under the state in hole as charge carrier, be ferromagnetism injecting or responding under the state of inducing the hole.
Stacked and the embodiment 1 of other layer is identical.Size of component is 1.5 μ m * 3 μ m.
For the magnetic switch element of such making, initial, with the embodiment 1 the same temperature range of measuring the magnetic resistance effect that detects test section.
As a result, confirmed at least in 4K～370K (absolute temperature) temperature range, can to detect the magnetic resistance effect.
Secondly, magnetic switch element is remained on the temperature of 100K, supply with between body and conversion layer at charge carrier and apply voltage.At first, according to improve the mode that charge carrier is supplied with the current potential of body with respect to conversion layer, apply voltage and (0～100V) time, do not find that the resistance value of test section has any variation.Secondly, in mode according to the current potential that reduces charge carrier supply body with respect to conversion layer, (0～100V) time, the hole is supplied with body from charge carrier and is moved to conversion layer, has obtained about 10% MR ratio as the magneto resistive ratio of the resistance change index of test section (MR than) to apply voltage.The resistance change of test section is to begin under the state that applies about 5V voltage, when applying about 50V voltage, has obtained maximum MR ratio.Apply voltage when the above scope of 50V, the MR of acquisition presents saturated tendency than almost not changing.
And, in embodiment 5, make magnetic switch element by the PLD method, when making element, also can obtain same result with MBE method, sputtering method and electron beam evaporation plating legal system.
(embodiment 6)
Made magnetic switch element (sample 5) with film formation shown below of the PLD method.Figure 12 represents the shape of sample 5.
-sample 5-
MgO substrate/Pr 0.7Ca 0.3MnO 3(300)/(La 0.6Sr 0.4) MnO 3(10)/(Nd, Sr) 2MnO 4(10)/ Pr on NiFe (10)/AlO (1)/CoFe (10)/PtMn (25)/Ta (3)/Cu (100)/Ta (25) MgO substrate 0.7Ca 0.3MnO 3Layer is insulating barrier, (La 0.6Sr 0.4) MnO 3Layer be charge carrier supply with body, (Nd, Sr) 2MnO 4Layer is that conversion layer, NiFe layer are magnetospheres.AlO is that nonmagnetic layer, CoFe/PtMn layer are the fixed magnetic layers that is laminated by antiferromagnetism body (PtMn).The Ta/Cu/Ta duplexer is the electrode on the fixed magnetic layer.Other electrode is also identical.And the orientation index of MgO substrate is (100).
The manufacture method of interpret sample 5.
At first, on the MgO substrate, make Pr 0.7Ca 0.3MnO 3/ (La 0.6, Sr 0.4) MnO 3// (Nd, Sr) 2MnO 4Duplexer.At this moment, the temperature of substrate approximately is in 600 ℃～900 ℃ scope (based on 850 ℃).Supply with (Sr, Ca) RuO of body as charge carrier 3The ratio of components of layer is Sr 0.8Ca 0.2RuO 3As conversion layer (Nd, Sr) 2MnO 4The ratio of components of layer is Nd 0.25Sr 1.75MnO 4And, as conversion layer (Nd, Sr) 2MnO 4In layer, being normal magnetic as charge carrier not having injection or induction to induce under the state in hole, is ferromagnetism injecting or responding under the state of inducing the hole.
Stacked and embodiment 1 the same the carrying out of other layer.Size of component is approximately 1.5 μ m * 3 μ m.
For the magnetic switch element of such making, initial, with the embodiment 1 the same temperature range of measuring the magnetic resistance effect that detects test section.
As a result, confirmed in the temperature range of 100K～370K, can detect the magnetic resistance effect at least.
Secondly, magnetic switch element is remained on ambient temperature, supply with between body and conversion layer at charge carrier and apply voltage.At first, according to supply with the mode that body improves the current potential of conversion layer with respect to charge carrier, apply voltage and (0～100V) time, do not find that the resistance value of test section has any variation.Secondly, in mode according to the current potential of supplying with body reduction conversion layer with respect to charge carrier, (0～100V) time, the hole is supplied with body from charge carrier and is moved to conversion layer, has obtained about 10% MR ratio as the magneto resistive ratio of the resistance change index of test section (MR than) to apply voltage.The resistance change of test section is to begin under the state that applies about 5V voltage, when applying 50V voltage, has obtained maximum MR ratio.Apply voltage when the above scope of 50V, the MR of acquisition presents saturated tendency than almost not changing.
And to be timing according to supply with the voltage that applies of mode that body reduces the current potential of conversion layer with respect to charge carrier, when applying positive and negative voltage repeatedly, the MR that obtains is than the also correspondingly increase and decrease along with the positive and negative variation that applies voltage.This shows that the magnetic conversion using of the conversion layer in the sample 5 is supplied with the voltage that applies between body and conversion layer at charge carrier and can reversibly be controlled.
The present invention, only otherwise break away from its intention and intrinsic propesties, also applicable to other execution mode.In this specification, in the clear and definite disclosed execution mode,, be not limited only to this though all aspects are illustrated.Scope of the present invention is not to be represented by above-mentioned explanation but represented by additional claim, also comprises all changes that are in claim same meaning and scope.
The possibility of commercial Application
As described above, according to the present invention, have and the distinct composition of prior art, energy Enough provide the magnetized state that makes magnetic magnetic that change, that improve energy conversion efficiency to open Close element and the magnetic storage that has used this element.
Magnetic switch element of the present invention for example can be applied to, photomagneto disk, hard disk, numeral The reproducing head of the magnetic recording of data flow (DDS), digital VTR etc. is measured revolution speed The magnetic sensor of degree usefulness, measure the stress/acceleration sensing of STRESS VARIATION, acceleration change etc. Device, heat sensor, chemical reaction sensor sensor class, maybe can be applied to magnetic random The magnetic storage of reference to storage (MRAM) etc.

Claims (21)

1. a magnetic switch element is characterized in that,
Comprise: magnetosphere, with the magnetic-coupled conversion layer of described magnetosphere, contain the charge carrier that is selected from least a material in metal and the semiconductor and supply with body,
Described magnetosphere and described charge carrier are supplied with body disposing under the state that applies voltage between described magnetosphere and the described charge carrier supply body,
Described conversion layer is to produce the layer that non-ferromagnetism-ferromagnetism is changed by applying described voltage,
By the described magnetospheric magnetized state of the described changing of transformation of described conversion layer.
2. magnetic switch element as claimed in claim 1 is characterized in that,
Described conversion layer is meant when applying described voltage, supplies with body by any charge carrier that is selected from electronics and hole from described charge carrier and flows into the layer that causes described conversion the described conversion layer.
3. magnetic switch element as claimed in claim 1 is characterized in that,
Described conversion layer is meant when applying described voltage, induces the layer that causes described conversion in described transfer layer by any charge carrier induction that is selected from electronics and hole.
4. magnetic switch element as claimed in claim 1 is characterized in that,
Described conversion is meant conversion between normal magnetic-ferromagnetism or the conversion between non magnetic-ferromagnetism.
5. magnetic switch element as claimed in claim 4 is characterized in that,
Described conversion layer is meant when applying described voltage, by the layer of normal magnetic state to the ferromagnetism state exchange.
6. magnetic switch element as claimed in claim 1 is characterized in that,
Do not applying under the state of described voltage, described conversion layer is in normal magnetic or non magnetic state, and when applying the state of described voltage, described conversion layer is in ferromagnetic state.
7. magnetic switch element as claimed in claim 1 is characterized in that,
Described conversion layer contains magnetic semiconductor.
8. magnetic switch element as claimed in claim 1 is characterized in that,
The variation of described magnetospheric described magnetized state is the variation of the described magnetospheric direction of magnetization.
9. magnetic switch element as claimed in claim 1 is characterized in that,
Dispose described conversion layer, described magnetosphere and described charge carrier according to the mode of utilizing described magnetosphere and described charge carrier to supply with the described conversion layer of body clamping and supply with body.
10. magnetic switch element as claimed in claim 1 is characterized in that,
Also contain first insulating barrier, described first insulating barrier is disposed at described conversion layer and described charge carrier is supplied with between the body.
11. magnetic switch element as claimed in claim 10 is characterized in that,
It is to have difform separately p or a n N-type semiconductor N that described conversion layer and described charge carrier are supplied with body,
Being formed with P-I-N between described conversion layer and described first insulating barrier and described charge carrier supply body engages.
12. magnetic switch element as claimed in claim 1 is characterized in that,
Also comprise the electrode that applies described voltage.
13. magnetic switch element as claimed in claim 12 is characterized in that,
According to utilizing the described charge carrier of described electrode and described conversion layer clamping to supply with the mode of body, dispose described charge carrier and supply with body, described conversion layer and described electrode.
14. magnetic switch element as claimed in claim 13 is characterized in that,
Also comprise second insulating barrier, described second insulating barrier is disposed at described charge carrier and supplies with between body and the described electrode.
15. magnetic switch element as claimed in claim 1 is characterized in that,
Also comprise to being selected from the magnetic field generating unit that described conversion layer and described magnetospheric one deck at least apply magnetic field.
16. magnetic switch element as claimed in claim 15 is characterized in that,
Described magnetic field generating unit is configured to: utilize described magnetic field generating unit and described charge carrier to supply with the body clamping and be selected from described conversion layer and described magnetospheric one deck at least.
17. magnetic switch element as claimed in claim 15 is characterized in that,
Described magnetic field generating unit comprises at least one that is selected from ferromagnetism body, coil and lead.
18. magnetic switch element as claimed in claim 1 is characterized in that,
The test section that also comprises the variation that detects described magnetospheric magnetized state.
19. magnetic switch element as claimed in claim 18 is characterized in that,
Described test section comprises magnetoresistive element, free magnetic layer and fixed magnetic layer that this magnetoresistive element has nonmagnetic layer and disposes in the mode of the described nonmagnetic layer of clamping,
Described magnetosphere and described free magnetic layer magnetic coupling,
Follow the variation of described magnetospheric magnetized state to change by the magnetized state of described free magnetic layer, the resistance difference of described magnetoresistive element.
20. magnetic switch element as claimed in claim 18 is characterized in that,
Described test section comprises fixed magnetic layer and nonmagnetic layer,
Dispose described fixed magnetic layer and described nonmagnetic layer according to the mode of utilizing described magnetosphere and the described nonmagnetic layer of described fixed magnetic layer clamping,
Form magnetoresistive element portion by described magnetosphere, described nonmagnetic layer and described fixed magnetic layer,
Along with the variation of described magnetospheric magnetized state, the resistance difference of described magnetoresistive element portion.
21. a magnetic storage is characterized in that, comprising:
The described magnetic switch element of a plurality of claims 18;
Be used for information record conductor lines in described magnetic switch element recorded information; With
The information that is used to read described information is read and is used conductor lines.
CNB2003801077689A 2002-12-25 2003-12-24 Magnetic switching device and magnetic memory using the same Expired - Fee Related CN100414716C (en)

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* Cited by examiner, † Cited by third party
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CN1244017A (en) * 1998-08-05 2000-02-09 国际商业机器公司 Non-volatile magnetic memory unit and component
WO2002033713A1 (en) * 2000-10-17 2002-04-25 International Business Machines Corporation Magnetic element, memory device and write head

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1244017A (en) * 1998-08-05 2000-02-09 国际商业机器公司 Non-volatile magnetic memory unit and component
WO2002033713A1 (en) * 2000-10-17 2002-04-25 International Business Machines Corporation Magnetic element, memory device and write head

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