CN100412991C - 利用深亚微米cmos标准工艺实现的eeprom电平转换电路及方法 - Google Patents
利用深亚微米cmos标准工艺实现的eeprom电平转换电路及方法 Download PDFInfo
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- CN100412991C CN100412991C CNB2006100895939A CN200610089593A CN100412991C CN 100412991 C CN100412991 C CN 100412991C CN B2006100895939 A CNB2006100895939 A CN B2006100895939A CN 200610089593 A CN200610089593 A CN 200610089593A CN 100412991 C CN100412991 C CN 100412991C
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CNB2006100895939A CN100412991C (zh) | 2006-07-05 | 2006-07-05 | 利用深亚微米cmos标准工艺实现的eeprom电平转换电路及方法 |
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CNB2006100895939A CN100412991C (zh) | 2006-07-05 | 2006-07-05 | 利用深亚微米cmos标准工艺实现的eeprom电平转换电路及方法 |
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CN1885435A CN1885435A (zh) | 2006-12-27 |
CN100412991C true CN100412991C (zh) | 2008-08-20 |
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CN112349333B (zh) * | 2020-11-25 | 2021-11-09 | 长江存储科技有限责任公司 | 一种存储器cmos电路 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0136811A2 (en) * | 1983-09-21 | 1985-04-10 | THORN EMI North America Inc. | Bit line load and column circuitry for a semiconductor memory |
US4995004A (en) * | 1989-05-15 | 1991-02-19 | Dallas Semiconductor Corporation | RAM/ROM hybrid memory architecture |
CN1197532A (zh) * | 1995-09-21 | 1998-10-28 | 西门子公司 | Fram存储单元 |
CN1711611A (zh) * | 2002-11-01 | 2005-12-21 | 松下电器产业株式会社 | 使用变阻元件的非易失性双稳态多谐振荡器电路的驱动方法 |
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- 2006-07-05 CN CNB2006100895939A patent/CN100412991C/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0136811A2 (en) * | 1983-09-21 | 1985-04-10 | THORN EMI North America Inc. | Bit line load and column circuitry for a semiconductor memory |
US4995004A (en) * | 1989-05-15 | 1991-02-19 | Dallas Semiconductor Corporation | RAM/ROM hybrid memory architecture |
CN1197532A (zh) * | 1995-09-21 | 1998-10-28 | 西门子公司 | Fram存储单元 |
CN1711611A (zh) * | 2002-11-01 | 2005-12-21 | 松下电器产业株式会社 | 使用变阻元件的非易失性双稳态多谐振荡器电路的驱动方法 |
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Effective date of registration: 20130523 Address after: 100176 No. 18, Wenchang Avenue, Beijing economic and Technological Development Zone Patentee after: Semiconductor Manufacturing International (Beijing) Corporation Patentee after: Peking University Address before: 100871 Beijing the Summer Palace Road, Haidian District, No. 5 Patentee before: Peking University |