CN100411496C - Method for realizing matchment between pulse power supply and plasma loading - Google Patents
Method for realizing matchment between pulse power supply and plasma loading Download PDFInfo
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- CN100411496C CN100411496C CNB2005100472713A CN200510047271A CN100411496C CN 100411496 C CN100411496 C CN 100411496C CN B2005100472713 A CNB2005100472713 A CN B2005100472713A CN 200510047271 A CN200510047271 A CN 200510047271A CN 100411496 C CN100411496 C CN 100411496C
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Abstract
The present invention belongs to the technical field of electric engineering, and particularly relates to a method for realizing matching between a pulse power supply and a plasma load. The present invention discloses a method which applies circuit theories, measuring techniques and simulation techniques to designing a matching circuit between the pulse power supply and the plasma load. The method is characterized in that equivalent parameters of the plasma load are obtained according to the voltage and the current waveform of the plasma load under pulse voltage and the relation between the voltage and the current of the plasma load under direct current voltage measured by test by applying simulation techniques, the circuit structure and the simulation parameters of the matching circuit are changed, so that the frequency response characteristic of the ratio between the pulse voltage (u2) on the plasma load and the pulse voltage (u1) output by the pulse power supply is close to the frequency response characteristic of a non-distortion system in the effect spectral range of the pulse voltage output by the pulse power supply. The present invention obviously improves the design efficiency of the matching circuit and saves cost.
Description
Technical field
The invention belongs to the electrical engineering technical field, relate in particular to a kind of method of mating between the pulse power and plasma load of realizing.
Background technology
In recent years, along with developing rapidly of Pulse Power Techniques, the pulse power is used widely at numerous areas such as material surface modifying, machining, environmental improvements, and the performance to act on emphatically, be applied to arc ion plating, electric machining, ozone generator etc. as the pulse power.In these are used, mostly the load of the pulse power is plasma load, in order to improve the effect of the pulse power, mostly require by the coupling between the pulse power and plasma load, make pulse voltage on the plasma load try one's best dead-beat and climbing height.But different with other load is, plasma load has the characteristic of capacitive load, and its equivalent capacity and equivalent resistance are different because of condition of work, and are difficult to accurate measurement.As in pulsed bias arc ions depositing process, the equivalent capacity of plasma load is different because of parameters such as arc current, air pressure, matrix area, settling chamber's structure and pulsed bias amplitudes with equivalent resistance.Like this, just brought very big difficulty for the coupling between the pulse power and plasma load.
The method of mating between the known realization pulse power and plasma load mainly contains:
1, by repeatedly changing the structure and parameter of match circuit, the observation experiment result realizes that coupling between the pulse power and plasma load is (as document " the Japanese metal Chi of association " 1997, described in 61 (2) " パ Le ス is put stopping up of へ acid ア Le ミ ニ ウ system generation on the Electricity To I Ru ア Le ミ ニ ウ system " and the document " high voltage technique " 1998,24 (2) " influencing factor of spark gap formula pulse power Pulse Electric parameter ").But, because this method is in the size of not knowing the plasma load equivalent parameters or just knows according to experience under the situation of approximate range of plasma load equivalent parameters and carry out, so, need a large amount of experimental period of cost and enough experiment materials in order to realize the coupling between the pulse power and plasma load.
2, by adjusting the structure and parameter of plasma reactor, the observation experiment result realize between the pulse power and plasma load coupling (as document " electrician's electric energy new technology " 2004,23 (2) " improvement of plasma reactor and and the pulse power between coupling " described in).This method equally also needs to spend a large amount of experimental periods and enough experiment materials, and the structure and parameter of plasma reactor is that scope that be difficult to adjust or the permission adjustment is very little in many cases.
At present, relation according to voltage on the plasma load under the voltage on the plasma load under the pulse voltage that in actual process, records, current waveform and the direct voltage and electric current, the utilization simulation technology obtains the equivalent parameters of plasma load, uses the pulse voltage (u on the emulation technology emulation plasma load on this basis
2) with the pulse voltage (u of pulse power output
1) ratio (u
2/ u
1) Frequency Response, change the circuit structure and the simulation parameter thereof of match circuit, make the pulse voltage (u on the plasma load
2) with the pulse voltage (u of pulse power output
1) ratio (u
2/ u
1) Frequency Response, in the effective spectrum scope of the pulse voltage that the pulse power is exported, Frequency Response near undistorted system, come to determine the circuit structure and the parameter thereof of match circuit thus, thereby make that under pulse power effect, the vibration of pulse voltage is effectively suppressed on the plasma load, avoids reducing the climbing of pulse voltage on the plasma load simultaneously, with the method that realizes mating between the pulse power and plasma load, do not appear in the newspapers so far.
Summary of the invention
The objective of the invention is for realizing the coupling between the pulse power and plasma load, a kind of new method is provided, what this method should overcome that the existing method that realizes mating between the pulse power and plasma load exists will spend a large amount of experimental periods and enough deficiencies such as experiment material, obviously improve the design efficiency of match circuit, save experimental cost, and should effectively be suppressed at the vibration of pulse voltage on the plasma load under the pulse power effect based on the match circuit of this method design, can avoid reducing the climbing of pulse voltage on the plasma load again.
Technical scheme of the present invention is: at first in actual process, utilize the voltage on the plasma load under voltage, current waveform and the direct voltage effect on the plasma load under the effect of the oscilloscope measurement pulse power and the relation of electric current; According to the pulse power structure in the described actual process, first match circuit and the voltage on the plasma load under voltage, current waveform and the direct voltage effect on the plasma load under the pulse power effect of transmitting the coaxial cable equivalent electric circuit of pulse power between the pulse power and plasma load and recording and the relation of electric current, set up the simulation circuit model that comprises the pulse power, first match circuit, coaxial cable and plasma load then; Utilize described simulation circuit model, at pulse power simulation parameter, voltage under the pulse voltage that records in the value of the first match circuit simulation parameter and coaxial cable simulation parameter and the described actual process on the plasma load, the pulse power parameter of current waveform correspondence, under the identical condition of the first match circuit parameter and coaxial cable equivalent parameters, change the plasma load simulation parameter, voltage on the emulation plasma load, current waveform, voltage on the plasma load that obtains by emulation, voltage on current waveform and the corresponding plasma load that records by experiment, till current waveform conforms to, obtain the plasma load equivalent parameters thus, for the design of match circuit between the pulse power and plasma load provides basic data; Utilize the simulation circuit model that comprises the pulse power, second match circuit, coaxial cable and plasma load on this basis, under the identical condition of coaxial cable equivalent parameters, the plasma load equivalent parameters that voltage, current waveform under the pulse voltage that records in the value of coaxial cable simulation parameter, plasma load simulation parameter and described actual process on the plasma load is corresponding, change the circuit structure and the simulation parameter thereof of second match circuit, the pulse voltage (u on the emulation plasma load
2) with the pulse voltage (u of pulse power output
1) ratio (u
2/ u
1) Frequency Response, until described Frequency Response, in the effective spectrum scope of the pulse voltage that the pulse power is exported, near the Frequency Response of undistorted system, come to determine the circuit structure and the parameter thereof of second match circuit thus, to realize the pulse power and plasma load coupling.Thereby make that under pulse power effect, the vibration of pulse voltage is effectively suppressed on the plasma load, avoid reducing the climbing of pulse voltage on the plasma load simultaneously, improve the effect of the pulse power.
Effect of the present invention and benefit are:
1. utilize oscilloscope can make things convenient for the voltage on the plasma load under voltage, current waveform and the direct voltage effect on the plasma load that records exactly under the pulse voltage effect and the relation of electric current, use simulation technology can make things convenient for the equivalent parameters that obtains plasma load exactly on this basis, thereby be the design of match circuit between the pulse power and the plasma load data that provide the foundation.
2. use the pulse voltage (u on the emulation technology emulation plasma load
2) with the pulse voltage (u of pulse power output
1) ratio (u
2/ u
1) Frequency Response, change the circuit structure and the simulation parameter thereof of match circuit, make the pulse voltage (u on the plasma load
2) with the pulse voltage (u of pulse power output
1) ratio (u
2/ u
1) Frequency Response, in the effective spectrum scope of the pulse voltage that the pulse power is exported, Frequency Response near undistorted system, the match circuit of Que Dinging not only can effectively suppress the vibration of pulse voltage on the plasma load thus, can avoid reducing simultaneously the climbing of pulse voltage on the plasma load.
3. can obviously improve the design efficiency of match circuit, save experimental cost.
Description of drawings
Fig. 1 is the measured drawing of the voltage in the arc ion plating load, current waveform under the pulsed bias.
Among the figure: figure (a) is the voltage waveform in the arc ion plating load under the pulsed bias, and figure (b) is the current waveform in the arc ion plating load under the pulsed bias, and the voltage in the arc ion plating load, current waveform are at " technological parameter "---arc current I
a=72A, nitrogen pressure P
N2=0.30Pa, matrix area S=0.063m
2, " pulse power parameter "---pulse voltage amplitude U
P=680V, duty ratio D=50%, frequency f=25kHz, " coaxial cable equivalent parameters "---resistance R
0=0.2 Ω, inductance L
0=2 μ H, capacitor C
0=30pF is (because in the arc ions depositing process, impulse wave is transmission time much smaller than rise time of pulse voltage in several meters the coaxial cable in length, so, the transmission of pulse power in coaxial cable can be considered does not have the guiding transmission, therefore the coaxial cable of transmission pulse power can be handled as common cable here, be that is to say available lumped parameter R as shown in Figure 3
0, L
0, C
0Describe the equivalent electric circuit of coaxial cable,, utilize relevant formula just can calculate R according to the length and the structural parameters of coaxial cable
0, L
0, C
0Value), " the first match circuit parameter "---inductance L
1=100 μ H (as shown in Figure 3, first match circuit 2 be use always by inductance L
1Or the match circuit that constitutes of the unit that is in series of inductance and resistance) under the condition, utilize the TDS-5052 oscilloscope to record.
Fig. 2 is the measured drawing of the voltage in the arc ion plating load and current relationship under the Dc bias.
Among the figure: the voltage in the arc ion plating load and current relationship are to record under the identical condition of the relevant parameter when " technological parameter ", " coaxial cable equivalent parameters " reach " the first match circuit parameter " and obtain Fig. 1.
Fig. 3 is the simulation circuit model that comprises the pulse power, first match circuit, coaxial cable and plasma load.
Among the figure: DC power supply U
DC, power switch pipe T
1, pulse signal source E
S, diode D
1And resistance R
S, diode D
S, capacitor C
SConstituted the equivalent electric circuit of the pulse power 1; Resistance R
0, inductance L
0And capacitor C
0Constituted the equivalent electric circuit that between the pulse power and arc ion plating load, transmits the coaxial cable 3 of pulse power; Capacitor C
LAnd resistance R
LConstituted the equivalent electric circuit of arc ion plating load 4; Inductance L
1Be serially connected in coupling inductance between the pulse power 1 and the arc ion plating load 4 for commonly used through coaxial cable 3, it has constituted first match circuit 2.
Fig. 4 is voltage, the current waveform analogous diagram in the arc ion plating load 4 that is obtained by Fig. 3.
Among the figure: figure (a) is the voltage waveform analogous diagram in the arc ion plating load 4 that is obtained by Fig. 3, figure (b) is the current waveform analogous diagram in the arc ion plating load 4 that is obtained by Fig. 3, and the voltage in the arc ion plating load 4, current waveform analogous diagram are " pulse power 1 simulation parameter "---U in Fig. 3
DC=680V, E
SFrequency f
s=25kHz, duty ratio D
s=50%, " coaxial cable 3 simulation parameters "---R
0=0.2 Ω, L
0=2 μ H, C
0=30pF, " first match circuit, 2 simulation parameters "---L
1=100 μ H, that is above-mentioned parameter is got " pulse power parameter ", " coaxial cable equivalent parameters " when obtaining Fig. 1 and is reached under the condition that " the first match circuit parameter " corresponding parameter equates and " arc ion plating load 4 simulation parameters "---R
L=400 Ω, C
LObtain under the condition of=1800pF.
Fig. 5 changes inductance L in circuit shown in Figure 3
1The analogous diagram of pulse voltage waveform in the arc ion plating load 4 that obtains during simulation parameter.
Among the figure: figure (a), figure (b), figure (c) are respectively in circuit shown in Figure 3, " pulse power 1 simulation parameter "---U
DC, f
s, D
s, " coaxial cable 3 simulation parameters "---R
0, L
0, C
0, " arc ion plating load 4 simulation parameters " R
L, C
L(U wherein remains unchanged
DC=700V, E
SFrequency f
s=25kHz, duty ratio D
s=50%, R
0=0.2 Ω, L
0=2 μ H, C
0=30pF, C
L=1800pF, R
L=400 Ω), inductance L
1When simulation parameter is respectively 3 μ H, 100 μ H, 950 μ H, the analogous diagram of pulse voltage waveform in the arc ion plating load 4 that obtains.
Fig. 6 comprises the simulation circuit model of the pulse power 1, second match circuit 5, coaxial cable 3 and plasma load 4.
Among the figure: second match circuit 5 is by inductance L
m, capacitor C
mAnd resistance R
mForm.
Fig. 7 is the pulse voltage (u in the arc ion plating load 4 in the circuit shown in Figure 6
2) with the pulse voltage (u of the pulse power 1 output
1) ratio (u
2/ u
1) Frequency Response curve analogous diagram.
Among the figure: Frequency Response curve analogous diagram is " coaxial cable 3 simulation parameters "---R in Fig. 6
0=0.2 Ω, L
0=2 μ H, C
0=30pF, " arc ion plating load 4 simulation parameters "---C
L=1800pF, R
L=400 Ω, " second match circuit, 5 simulation parameters "---L
m=50 μ H, R
m=60 Ω, C
mObtain under the condition of=470nF, wherein, curve I is an amplitude-versus-frequency curve, and curve II is the phase-frequency characteristic curve.
Fig. 8 is the frequency spectrum measured drawing of the pulse voltage of pulse power output.
Fig. 9 is when second match circuit 5 that adopts shown in Fig. 6, the pulse voltage waveform measured drawing in the arc ion plating load.
Among the figure: the pulse voltage waveform figure in the arc ion plating load is at " technological parameter "---arc current I
a=72A, nitrogen pressure P
N2=0.30Pa, matrix area S=0.063m
2, " pulse power parameter "---pulse voltage amplitude U
P=680V, duty ratio D=50%, frequency f=25kHz, " coaxial cable equivalent parameters "---resistance R
0=0.2 Ω, inductance L
0=2 μ H, capacitor C
0Under the condition of=30pF (" technological parameter ", " pulse power parameter ", " the coaxial cable equivalent parameters " promptly got when obtaining Fig. 1 are identical) and at " second match circuit, 5 parameters "---L
m=50 μ H, R
m=60 Ω, C
mSurvey under the condition of=470nF (" second match circuit, 5 simulation parameters " promptly got when obtaining Fig. 7 are identical).
In addition, obtaining the related arc ion plating technological experiment of Fig. 1, Fig. 2, Fig. 8 and Fig. 9 result all carries out on Russia product Bulat6 type arc ion plating machine.
Embodiment
Below in conjunction with technical scheme and accompanying drawing, be described in detail most preferred embodiment of the present invention.
Because arc ion plating is the important technology approach of contemporary thin-film technique, being of wide application of it, and the arc ion plating load is exactly a kind of plasma load in fact, so be that example (is annotated: in the arc ions depositing process with the coupling between the pulse power and arc ion plating load here, need apply negative Dc bias or pulsed bias to matrix, present trend is to replace the Dc bias put on the matrix with pulsed bias), a kind of method of mating between the pulse power and plasma load of realizing is described in detail in detail.
According to the voltage in the arc ion plating load under the pulsed bias that in actual process, records, voltage under current waveform (as shown in Figure 1) and the Dc bias in the arc ion plating load and current relationship (as shown in Figure 2), structure (pulse power that uses in the actual process is the solid switch formula pulse power) in conjunction with the pulse power in the actual process, first match circuit and transmit the equivalent electric circuit of the coaxial cable of pulse power between the pulse power and plasma load can be set up the pulse power 1 that comprises shown in Figure 3, first match circuit 2, the simulation circuit model of coaxial cable 3 and plasma load 4.
In Fig. 3, get " pulse power 1 simulation parameter "---U
DC, E
SFrequency f
s, E
SDuty ratio D
s, " coaxial cable 3 simulation parameters "---R
0, L
0, C
0, " first match circuit, 2 simulation parameters "---L
1, " pulse power parameter ", " coaxial cable equivalent parameters " when obtaining Fig. 1 reach " the first match circuit parameter " corresponding parameter and equate (U
DC=680V, E
SFrequency f
s=25kHz, duty ratio D
s=50%, R
0=0.2 Ω, L
0=2 μ H, C
0=30pF, L
1=100 μ H), utilize OrCAD Pspice emulation tool, can obtain: as " arc ion plating load 4 simulation parameters "---R
L=400 Ω, C
LDuring=1800pF, the voltage under the voltage in the arc ion plating load 4 among Fig. 3 shown in Figure 4, the analogous diagram of current waveform and the pulsed bias shown in Figure 1 in the arc ion plating load, the measured drawing of current waveform conform to.
Because the arc ion plating load depends mainly on arc current, air pressure, matrix area, settling chamber's structure and pulsed bias amplitude in the coating process, therefore, the experimental result and simulation result and the simulation circuit model shown in Figure 3 that provide according to Fig. 1, Fig. 2, Fig. 4, can draw: it can equivalence be an electric capacity and the unit that resistance is in parallel that arc ion plating loads in the circuit, at experimental result shown in Figure 1 pairing " technological parameter "---arc current I
a=72A, nitrogen pressure P
N2=0.30Pa, matrix area S=0.063m
2, " pulse power parameter "---pulsed bias amplitude U
P=680V, duty ratio D=50%, frequency f=25kHz and filming equipment adopt Russia to produce under the condition of Bulat6 type arc ion plating machine, and the equivalent parameters of arc ion plating load is---resistance R
L=400 Ω, capacitor C
L=1800pF.
Like this, on the basis of the equivalent electric circuit of clear and definite arc ion plating load and equivalent parameters size thereof, just can utilize Circuit theory and emulation technology, design the match circuit between the pulse power and arc ion plating load effectively, in the hope of reaching in pulsed bias arc ions depositing process, can effectively suppress the vibration of pulse voltage in the arc ion plating load, can avoid the reduction of pulse voltage climbing in the arc ion plating load again, improve the purpose of coating quality.
In Fig. 3, get " arc ion plating load 4 simulation parameters "---R
L=400 Ω, C
L=1800pF, " pulse power 1 simulation parameter "---U
DC=680V, E
SFrequency f
s=25kHz, duty ratio D
s=50%, " coaxial cable 3 simulation parameters "---R
0=0.2 Ω, L
0=2 μ H, C
0=30pF, and remain unchanged.At this moment, can obtain at " first match circuit, 2 simulation parameters "---L
1Under the different values, the analogous diagram of the voltage waveform in the corresponding arc ion plating load 4, as shown in Figure 5.
As can be seen from Figure 5: along with inductance L
1Continuous increase, the degree of oscillation in pulse voltage forward position weakens gradually in the arc ion plating load, but therefore also cause the climbing of pulse voltage in the arc ion plating load to reduce gradually simultaneously, and if will eliminate the vibration of pulse voltage in the arc ion plating load fully, then the climbing of pulse voltage will become very slow (shown in Fig. 5 (c)) in the arc ion plating load, and this is unfavorable for improving coating quality.
In addition, if the method that adopts series inductance and resistance between the pulse power and arc ion plating load (promptly with the inductance L among the inductance of connecting and resistance replacement Fig. 3
1), with reference to Fig. 3, utilize Circuit theory or emulation technology to draw: this method is owing to increased the time constant of pulse voltage to this capacitive load charging of arc ion plating, so, though can suppress the vibration of pulse voltage in the arc ion plating load, also will cause the climbing of pulse voltage in the arc ion plating load obviously to reduce thus.
Therefore, adopt commonly used between the pulse power and arc ion plating load, matched form through coaxial cable tandem electric inductance or series inductance and resistance, be difficult to reach the vibration that can effectively suppress pulse voltage in the arc ion plating load, can avoid the purpose that the pulse voltage climbing reduces in the arc ion plating load again.
In order to reach the vibration that can effectively suppress pulse voltage in the arc ion plating load, can avoid the purpose that the pulse voltage climbing reduces in the arc ion plating load again, provided a kind of among Fig. 6 by inductance L
m, capacitor C
mAnd resistance R
mSecond match circuit of forming 5.
The design philosophy of second match circuit 5 is: as shown in Figure 6, be serially connected in second match circuit 5 between the output and arc ion plating load 4 of the pulse power 1 through coaxial cable 3, get " coaxial cable 3 simulation parameters ", voltage under the pulse voltage that records in " arc ion plating load 4 simulation parameters " and the actual process shown in Figure 1 on the plasma load, " the coaxial cable equivalent parameters " of current waveform correspondence, " plasma load equivalent parameters " is identical, change the circuit structure and the simulation parameter thereof of second match circuit 5, the pulse voltage (u on the emulation plasma load
2) with the pulse voltage (u of pulse power output
1) ratio (u
2/ u
1) Frequency Response, until described Frequency Response, in the effective spectrum scope of the pulse voltage that the pulse power is exported, Frequency Response near undistorted system, come to determine the circuit structure and the parameter thereof of second match circuit 5 thus, thereby reach the vibration that can effectively suppress pulse voltage in the arc ion plating load, can avoid the reduction of pulse voltage climbing in the arc ion plating load again, improve the purpose of coating quality.
Based on the design philosophy of above-mentioned second match circuit 5, the corresponding parameter when in Fig. 6, getting " coaxial cable 3 simulation parameters " and " arc ion plating load 4 simulation parameters " and obtaining Fig. 1 equates, promptly gets R
0=0.2 Ω, L
0=2 μ H, C
0=30pF, C
L=1800pF, R
L=400 Ω, by circuit structure and the simulation parameter thereof that changes second match circuit 5, the pulse voltage (u in the emulation arc ion plating load 4
2) with the pulse voltage (u of the pulse power 1 output
1) ratio (u
2/ u
1) the Frequency Response curve, can obtain: when second match circuit 5 take to provide among Fig. 6 by inductance L
m, capacitor C
mAnd resistance R
mThe circuit structure that constitutes, and L
m=50 μ H, C
m=470nF, R
mDuring=60 Ω, the pulse voltage (u in the arc ion plating load 4
2) with the pulse voltage (u of the pulse power 1 output
1) ratio (u
2/ u
1) Frequency Response curve (amplitude-versus-frequency curve I as shown in Figure 7 and phase-frequency characteristic curve II), in the effective spectrum scope of the pulse voltage of pulse power output (as shown in Figure 8, the frequency spectrum of the pulse voltage of pulse power output mainly is distributed in the scope that is lower than 400kHz), near the Frequency Response of undistorted system.
In this case, that is with obtain that " arc ion plating load 4 simulation parameters ", " coaxial cable 3 simulation parameters " as a result time the shown in Figure 7 reach " second match circuit, 5 simulation parameters " corresponding " technological parameter ", " pulse power parameter ", " coaxial cable equivalent parameters " reaches " second match circuit, 5 parameters " (arc current I
a=72A, nitrogen pressure P
N2=0.30Pa, matrix area S=0.063m
2, the amplitude U of pulse voltage
P=680V, duty ratio D=50%, frequency f=25kHz, the equivalent resistance R of coaxial cable
0=0.2 Ω, equivalent inductance L
0=2 μ H, equivalent capacity C
0=30pF, the L in second match circuit 5
m=50 μ H, R
m=60 Ω, C
mUnder=470nF) the condition, the pulse voltage waveform in the actual arc ion plating load that records as shown in Figure 9.As can be seen from Figure 9: the vibration of pulse voltage has obtained effective inhibition in arc ion plating load this moment, also avoided simultaneously the reduction of pulse voltage climbing, this is also just by the coupling between the pulse power and arc ion plating load, the desired effect that reaches.
Claims (1)
1. method that realizes mating between the pulse power and plasma load, utilize voltage and current waveform, pulse power parameter, coaxial cable parameter and simulation circuit model on the plasma load, determine the structure and parameter of match circuit, it is characterized in that:
A) according to the voltage on the plasma load under voltage, current waveform and the direct voltage on the plasma load under the pulse voltage that in actual process, records and the relation of electric current, structure, first match circuit in conjunction with the pulse power in the described actual process reach the equivalent electric circuit that transmits the coaxial cable of pulse power between the pulse power and plasma load, set up the simulation circuit model that comprises the pulse power, first match circuit, coaxial cable and plasma load;
B) utilization comprises the pulse power, first match circuit, the simulation circuit model of coaxial cable and plasma load, at pulse power simulation parameter, voltage under the pulse voltage that records in the value of the first match circuit simulation parameter and coaxial cable simulation parameter and the described actual process on the plasma load, the pulse power parameter of current waveform correspondence, under the identical condition of the first match circuit parameter and coaxial cable equivalent parameters, change the plasma load simulation parameter, voltage on the emulation plasma load, current waveform, voltage on the plasma load that obtains by emulation, voltage on current waveform and the corresponding plasma load that records by experiment, till current waveform conforms to, obtain the plasma load equivalent parameters thus;
C) utilize the simulation circuit model that comprises the pulse power, second match circuit, coaxial cable and plasma load, under the identical condition of coaxial cable equivalent parameters, the plasma load equivalent parameters that voltage, current waveform under the pulse voltage that records in the value of coaxial cable simulation parameter, plasma load simulation parameter and described actual process on the plasma load is corresponding, change the circuit structure and the simulation parameter thereof of second match circuit, the pulse voltage (u on the emulation plasma load
2) with the pulse voltage (u of pulse power output
1) ratio (u
2/ u
1) Frequency Response, until described Frequency Response, in the effective spectrum scope of the pulse voltage of pulse power output,, come to determine the circuit structure and the parameter thereof of second match circuit thus near the Frequency Response of undistorted system.
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| US7286948B1 (en) * | 2006-06-16 | 2007-10-23 | Applied Materials, Inc. | Method for determining plasma characteristics |
| CN107782942B (en) * | 2016-08-31 | 2021-03-02 | 北京普源精电科技有限公司 | Oscilloscope measuring circuit, active front end thereof, testing system and measuring method |
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