CN100410659C - Microgas sensor using one-dimension nanometer material - Google Patents
Microgas sensor using one-dimension nanometer material Download PDFInfo
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- CN100410659C CN100410659C CNB2005101122168A CN200510112216A CN100410659C CN 100410659 C CN100410659 C CN 100410659C CN B2005101122168 A CNB2005101122168 A CN B2005101122168A CN 200510112216 A CN200510112216 A CN 200510112216A CN 100410659 C CN100410659 C CN 100410659C
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Abstract
The present invention relates to a miniature gas sensor using one-dimensional nanometer materials, which belongs to the technical field of sensors. The present invention comprises a substrate, a metal base electrode layer, a one-dimensional nanometer material layer, a metal supporting pole layer and a metal top electrode layer, wherein the metal base electrode layer is arranged on the substrate; the one-dimensional nanometer material layer is arranged on the metal base electrode layer; the metal supporting pole layer is arranged on the substrate; a top electrode is arranged on the substrate. The metal base electrode layer, the one dimensional nanometer material layer and the metal supporting pole layer are isolated mutually, and gas gaps are formed between the top electrode layer, the base electrode layer and the one dimensional nanometer material layer for mutual isolation. The present invention has the advantages of high selectivity, high sensitivity, low energy consumption, low cost and easy realization of arrays and miniaturization. Moreover, the present invention is favorable to the improvement of security and stability.
Description
Technical field
What the present invention relates to is a kind of sensor of microelectronics technology.It specifically is a kind of mini type gas sensor that uses monodimension nanometer material.
Technical background
Is the sensor of mechanism based on the ionization of gas molecule in electric field with the charged particle transport that produces therefrom, can be used for sensing gas with various composition and content information, with respect to the sensor of other types, the major advantage of this sensor is that it has very high selectivity.
Find through literature search prior art, people such as Modi.Ashish are at " Nature (nature) ", " Miniaturized gas ionization sensors using carbonnanotubes (the using the minitype gas ionization transducer of carbon nano-tube) " of 2003 the 424th curly hair tables.This article has proposed a kind of monodimension nanometer material---when carbon nano-tube is used as electrode, because the effect of its highfield enhancer, under identical voltage, can produce stronger electric field than the common metal plate electrode, therefore be equivalent to can be under lower voltage gas breakdown, and serve as according to composition and the concentration information of judging gas with the different voltage breakdown of all gases.Because the gas sensor of this principle has the high feature of selectivity to the gas of certain scope, therefore the described technology of the document has solved the problem of the working sensor voltage that reduces this type of principle to a certain extent, but the document does not propose a kind of device architecture of processing realization, but experimental each parts is simply pieced together, in fact, one of core texture key element that replants device is an electrode separation, only make little extremely several microns to tens microns the level of electrode separation, just can avoid this sensor is carried out operation with high pressure, but so little spacing needs high-precision manufacturing process to control, and in order to introduce such manufacturing process, the device architecture that is fit to this manufacturing process must be arranged, the device architecture that is proposed in the document is experimental, is difficult to realize high-precision batch machining according to this organization plan.The know-why that does not also have the document is applied to the microsensor manufacturing at present, and proposes to be suitable for utilizing the device architecture of advanced fine process to occur.
Summary of the invention
The present invention is directed to the deficiencies in the prior art and defective, a kind of mini type gas sensor that uses monodimension nanometer material is proposed, make it be suitable for utilizing microelectric technique to carry out processing and manufacturing, can utilize microelectronic processing technology that the key parameter of device is carried out High Accuracy Control, so the sensor of this kind structure have the advantage that selectivity height, highly sensitive, low energy consumption, cost are low, be easy to realize array, miniaturization.
The present invention is achieved by the following technical solutions, the present invention includes: substrate, metallic bottom electrode layer, monodimension nanometer material layer, metal support layer, metal roof electrode layer.Wherein, the metallic bottom electrode layer is arranged on the substrate.The monodimension nanometer material layer is arranged on the metallic bottom electrode layer.Metal support layer is arranged on the substrate.The metal roof electrode layer is arranged on the substrate.Isolate mutually between metallic bottom electrode layer, monodimension nanometer material layer and the metal support layer.There is gas gap to isolate mutually between metal roof electrode layer and metallic bottom electrode layer, the monodimension nanometer material layer.
Described substrate, its surface has high insulating property, and it can be a glass, also can be the silicon chip that the upper strata has insulation course, and insulating layer material can be silicon dioxide, silicon nitride, also can be other dielectric substrate.
Described metallic bottom electrode layer can be individual layer or multiple layer metal film.
Described monodimension nanometer material layer can be the potpourri that monodimension nanometer material and other materials form.
Described metal support layer can be individual layer or multiple layer metal film.
Described metal roof electrode layer is positioned on the metal support layer, and links to each other with metal support layer, and gapped mutual isolation has gas between metal roof electrode layer and metallic bottom electrode layer, the monodimension nanometer material layer in the gap.
In device architecture of the present invention, because top electrode, hearth electrode and electrode support all are made of metal, therefore being beneficial to the photosensitive material photoetching development technology, metal selective electroplating technology and the multilayer technique that use microelectronic processing technique realizes, and help controlling accurately distance between top electrode and the monodimension nanometer material layer, thereby operating voltage can be reduced by a larger margin, cut down the consumption of energy, improve security, stability.
Description of drawings
Fig. 1 is the two-dimensional structure sketch of a kind of structure of the present invention.
Fig. 2 is that the present invention works as monodimension nanometer material laminar surface gas ionization output voltage-current signal curve when being about 3 microns apart from the top electrode spacing.
Fig. 3 is the present invention's gas ionization output voltage-current signal curve when working as one-dimensional nano material film surface distance top electrode spacing and being about 10 microns.
Embodiment
As shown in Figure 1, the present invention includes: substrate 1, metallic bottom electrode layer 2, monodimension nanometer material layer 3, metal support layer 4, metal roof electrode layer 5.Wherein, metallic bottom electrode layer 2 is arranged on the substrate 1.Monodimension nanometer material layer 3 is arranged on the metallic bottom electrode layer 2.Metal support layer 4 is arranged on the substrate 1.Metal roof electrode layer 5 is arranged on the substrate 1.Isolate mutually between metallic bottom electrode layer 2 and monodimension nanometer material layer 3 and the metal support layer 4.There is gas gap to isolate mutually between metal roof electrode layer 5 and bottom electrode layer 2 and the monodimension nanometer material layer 3.
Described substrate 1, its surface has high insulating property, and it can be a glass, also can be the silicon chip that the upper strata has insulation course, and insulating layer material can be silicon dioxide, silicon nitride, also can be other dielectric substrate.
Described metallic bottom electrode layer 2 can be individual layer or multiple layer metal film.Described metal, for example chromium, copper, gold, platinum, aluminium, nickel, iron-nickel, nickel-copper.
Described-dimension nano material layer 3, be the mixture film that comprises monodimension nanometer material.Its monodimension nanometer material can be carbon nano-tube, carbon nano-fiber, nano silicon carbide silica fibre, nano zine oxide fiber.
Described metal support layer 4 can be individual layer or multiple layer metal film.Its metal can be chromium, copper, gold, platinum, aluminium, nickel, iron-nickel, nickel-copper.
Described metal roof electrode layer 5 is positioned on the metal support layer 4, and links to each other with metal support layer 4, and gapped mutual isolation has gas between metal roof electrode layer 5 and metallic bottom electrode layer 2, the monodimension nanometer material layer 3 in the gap.
When the present invention works, when between metal roof electrode layer 5 and metallic bottom electrode layer 2, applying certain voltage, will in the gap between monodimension nanometer material layer 3 and the metal roof electrode layer 5, produce electric field, when electric field is enough to puncture gas in the gap, external circuit will be converted to the conducting state after the gas breakdown fast by the short-circuit condition that gas does not puncture, just detect electric current, discharge inception voltage according to heterogeneity and concentration gases, the different fact of discharge initial current, can be used as the foundation of judging that whether certain composition and content gas exist, also can be used as the foundation whether certain gas componant and content change.In device architecture of the present invention, because metal roof electrode layer 5, metallic bottom electrode layer 2 and electrode support layer 4 all are made of metal, therefore being beneficial to the photosensitive material photoetching development technology, metal selective electroplating technology and the multilayer technique that use microelectronic processing technique realizes, and help controlling accurately distance between top electrode and the monodimension nanometer material layer, thereby operating voltage can be reduced by a larger margin, cut down the consumption of energy, improve security, stability.
As Fig. 2, shown in Figure 3, be gas ionization output voltage of the present invention-current signal curve.Tested gas has three kinds, is respectively air, volume ratio and is 1% helium and volume ratio and be 10% carbon dioxide mix in air.The air pressure of these three kinds of gases is 1 atmospheric pressure.The test environment temperature is 18 degrees centigrade.Device microelectronic processing technique manufacturing, usability luminescent material are as the little galvanoplastics of the metal of little mold, and metal roof electrode layer 5 is respectively about 1-3 micron (Fig. 2) and about 8-10 micron (Fig. 3) apart from the spacing of carbon nano-tube.As seen from the figure, the operating voltage of device can be reduced to several volts to tens volts level, and the planar dimension of device is about 3 * 3 millimeters, the selectivity height, and stability, security is good, and energy consumption is low, is easy to realize volume production, is easy to array, and cost is low.
Claims (5)
1. mini type gas sensor that uses monodimension nanometer material, comprise: substrate (1), metallic bottom electrode layer (2), monodimension nanometer material layer (3), metal support layer (4), metal roof electrode layer (5), it is characterized in that, metallic bottom electrode layer (2) is arranged on the substrate (1), monodimension nanometer material layer (3) is arranged on the metallic bottom electrode layer (2), metal support layer (4) is arranged on the substrate (1), metal roof electrode layer (5) is arranged on the substrate (1), isolate mutually between metallic bottom electrode layer (2) and monodimension nanometer material layer (3) and the metal support layer (4), have gas gap to isolate mutually between metal roof electrode layer (5) and metallic bottom electrode layer (2) and the monodimension nanometer material layer (3); Described substrate (1) is a dielectric substrate.
2. the mini type gas sensor of use monodimension nanometer material according to claim 1 is characterized in that, described metallic bottom electrode layer (2) is individual layer or multiple layer metal film.
3. the mini type gas sensor of use monodimension nanometer material according to claim 1 is characterized in that, said monodimension nanometer material layer (3) is the mixture film that comprises monodimension nanometer material.
4. the mini type gas sensor of use monodimension nanometer material according to claim 1 is characterized in that, described metal support layer (4) is individual layer or multiple layer metal film.
5. the mini type gas sensor of use monodimension nanometer material according to claim 1, it is characterized in that, described metal roof electrode layer (5), be positioned on the metal support layer (4), and link to each other with metal support layer (4), gapped mutual isolation between metal roof electrode layer (5) and metallic bottom electrode layer (2), the monodimension nanometer material layer (3) has gas in the gap.
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| CNB2005101122168A CN100410659C (en) | 2005-12-29 | 2005-12-29 | Microgas sensor using one-dimension nanometer material |
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| CN100410659C true CN100410659C (en) | 2008-08-13 |
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Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101236177B (en) * | 2008-02-28 | 2010-11-17 | 上海交通大学 | Gas sensors electrode structure integrating three kinds detection for discharging, gas-sensitivity and electric quantity |
| CN101236178B (en) * | 2008-02-28 | 2010-11-17 | 上海交通大学 | Multiple calibration index gas composition distinguishing and recognition method |
| CN101349665B (en) * | 2008-09-04 | 2011-06-08 | 上海交通大学 | Adsorption and ionization complementary enhanced gas sensor |
| CN101349671B (en) * | 2008-09-04 | 2011-08-31 | 上海交通大学 | Field effect tube and molecular ionization fusion gas sensor |
| CN101408514B (en) * | 2008-09-04 | 2010-08-18 | 上海交通大学 | Gas sensor based on gas discharge spectral analysis and method for testing gas thereof |
| CN113390952B (en) * | 2021-06-15 | 2022-12-16 | 上海航天科工电器研究院有限公司 | Ionization type gas sensor and preparation method thereof |
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| US6445006B1 (en) * | 1995-12-20 | 2002-09-03 | Advanced Technology Materials, Inc. | Microelectronic and microelectromechanical devices comprising carbon nanotube components, and methods of making same |
| WO2004059298A1 (en) * | 2002-12-20 | 2004-07-15 | Rensselaer Polytechnic Institute | Miniaturized gas sensors featuring electrical breakdown in the vicinity of carbon nanotube tips |
| CN1632557A (en) * | 2004-12-22 | 2005-06-29 | 浙江大学 | Multi-wall carbon nano-tube film gas sensor |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6445006B1 (en) * | 1995-12-20 | 2002-09-03 | Advanced Technology Materials, Inc. | Microelectronic and microelectromechanical devices comprising carbon nanotube components, and methods of making same |
| WO2004059298A1 (en) * | 2002-12-20 | 2004-07-15 | Rensselaer Polytechnic Institute | Miniaturized gas sensors featuring electrical breakdown in the vicinity of carbon nanotube tips |
| CN1632557A (en) * | 2004-12-22 | 2005-06-29 | 浙江大学 | Multi-wall carbon nano-tube film gas sensor |
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| Title |
|---|
| Miniaturized gas ionization sensors using carbon nanotubes. Ashish Modi, Nikhil Koratkar, Eric Lass, Bingqing Wei,Pulickel M. Ajayan.nature,Vol.424 . 2003 |
| Miniaturized gas ionization sensors using carbon nanotubes. Ashish Modi, Nikhil Koratkar, Eric Lass, Bingqing Wei,Pulickel M. Ajayan.nature,Vol.424 . 2003 * |
| Study of improving identification accuracy of carbonnanotube film cathode gas sensor. Zhang Yong, Liu Junhua, Li Xin, Tang Xiaojun, ZhuChangchun.Sensors and Actuators A,Vol.125 . 2005 |
| Study of improving identification accuracy of carbonnanotube film cathode gas sensor. Zhang Yong, Liu Junhua, Li Xin, Tang Xiaojun, ZhuChangchun.Sensors and Actuators A,Vol.125 . 2005 * |
| 基于局部高电场中气体导电原理的新型气体传感器. 戴平湖，凌保明.仪器仪表学报，第19卷第3期. 1998 |
| 基于局部高电场中气体导电原理的新型气体传感器. 戴平湖，凌保明.仪器仪表学报，第19卷第3期. 1998 * |
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