CN100409440C - Matrix type LED and manufacturing method thereof - Google Patents
Matrix type LED and manufacturing method thereof Download PDFInfo
- Publication number
- CN100409440C CN100409440C CNB2005100877599A CN200510087759A CN100409440C CN 100409440 C CN100409440 C CN 100409440C CN B2005100877599 A CNB2005100877599 A CN B2005100877599A CN 200510087759 A CN200510087759 A CN 200510087759A CN 100409440 C CN100409440 C CN 100409440C
- Authority
- CN
- China
- Prior art keywords
- circuit layer
- substrate
- negative pole
- matrix form
- emitting diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Led Device Packages (AREA)
Abstract
The present invention relates to a matrix type light emitting diode and a manufacture method thereof. The light emitting diode comprises a baseplate, a circuit layer, a reflection cover, a plurality of light emitting diode wafers, at least one positive / one negative pole pins and a lens die set. The present invention has the method for manufacturing the matrix form light emitting diode that the baseplate is firstly provided; after, the circuit layer is arranged on the baseplate and is provided with a positive / a negative poles; then, the reflection cover is arranged on the circuit layer and is provided with a plurality of openings which are arrayed in a matrix mode; each of the light emitting diode wafers is sequentially arranged on each of the openings, and the positive / the negative poles of each of the light emitting diode wafers are connected with the positive / the negative poles of the circuit layer; then, the positive / the negative pole pins are arranged on the baseplate and are electrically connected with the positive/ the negative poles of the circuit layer; finally, the lens die set is arranged on the reflection cover, and the light emitting diode wafers are covered.
Description
Technical field:
The invention relates to a kind of matrix form Light-emitting Diode And Its Making Method, it is convenient to the assembling use, to improve the efficient that assembling is used.
Background technology:
Electric consumption on lighting power in the whole world is about 40% of total electricity consumption now, this shows the demand of people for illumination, yet electric power still need be developed other prior purposes except illumination, therefore how the exploiting economy power supply of environmental protection effectively again is the science and technology that the whole world is all craved for; But before this science and technology does not break through as yet, probably have only electrical energy saving to be only important effectively electricity consumption measure again.In recent years, the rapid technological improvement of light-emitting diode, the following lighting apparatus that replaces now with light-emitting diode is not a dream, the present light-emitting diode made from the optoelectronic semiconductor technology, volume is little, power consumption is low, the life-span is long, and following its will become the lighting source that has power saving and environmental protection notion concurrently, now in order to improve irradiation brightness and the irradiated area that uses light-emitting diode, so a plurality of light-emitting diodes can be arranged as one, arrange as matrix form.
Current matrix formula light-emitting diode, manufacturing process is provided with a plurality of openings at a substrate earlier, one LED wafer so is set in each opening, each LED wafer just/negative pole is a mode of utilizing routing, and be connected to substrate set just/negative electrode, yet when the matrix form light-emitting diode is set to control circuit board, for example: when using the matrix form light-emitting diode as lighting apparatus, promptly must make by the mode of bonding wire the matrix form light-emitting diode just/negative pole is electrically connected at control circuit board, because of welding manner expends time in, so have the low problem of installation effectiveness, and the matrix form light-emitting diode of commonly using is difficult for heat radiation, so the high heat that the matrix form light-emitting diode is produced when using is difficult for preventing, cause light-emitting diode to reduce useful life easily.
Therefore, the invention provides a kind of matrix form Light-emitting Diode And Its Making Method, is to can be easily installed in control circuit board, improves installation effectiveness, and can improve radiating efficiency, and then prolong the useful life of matrix form light-emitting diode, to address the above problem.
Summary of the invention:
Main purpose of the present invention, be to provide a kind of matrix form Light-emitting Diode And Its Making Method, its be by with each LED wafer just/negative pole be electrically connected at circuit layer just/negative electrode, and just/negative electrode with just/the negative pole pin electrically connects, for being inserted in control circuit board, so can be convenient to install and use, improve installation effectiveness.
Another object of the present invention is to provide a kind of matrix form Light-emitting Diode And Its Making Method, and it is to install radiator easily additional, promotes the radiating efficiency of matrix form light-emitting diode, and then improves useful life.
Another purpose of the present invention is to provide a kind of matrix form Light-emitting Diode And Its Making Method, and it is by at substrate groove being set, and so that LED wafer to be set, so can improve the radiating efficiency and the collection efficiency of matrix form light-emitting diode.
Matrix form Light-emitting Diode And Its Making Method of the present invention, the matrix form light-emitting diode includes a substrate, a circuit layer, a reflection lid, a plurality of LED wafer and just at least one/negative pole pin, when making the matrix form light-emitting diode, at first provide substrate; Then, circuit layer is set in substrate, this circuit layer is provided with at least one positive pole and negative pole; Then, reflection is set is covered on circuit layer, the reflection lid is provided with a plurality of openings of arranged; Afterwards, each LED wafer is set in each opening, LED wafer just/negative pole and circuit layer just/negative pole is electrically connected; At last, just be provided with/the negative pole pin is in substrate and wore substrate, just/negative pole pin and circuit layer just/negative pole is electrically connected; And, wear a plurality of insulated columns in this substrate, wear for this positive pole pin and this negative pole pin.So when matrix form light-emitting diode of the present invention is installed, only need be just/the negative pole pin is inserted in the control circuit board of desire configuration, can uses, so can improve installation effectiveness and minimizing installation time.
Description of drawings:
Fig. 1 is the stereogram of preferred embodiment of the present invention;
Fig. 2 is the exploded view of preferred embodiment of the present invention;
Fig. 3 A is the top view that circuit layer of the present invention is located at substrate;
Fig. 3 B is the cutaway view of the A-A direction of Fig. 3 A;
Fig. 4 A is the top view that circuit layer of the present invention, reflection are covered on substrate;
Fig. 4 B is the cutaway view of the B-B direction of Fig. 4 A;
Fig. 4 C is the top view that LED wafer of the present invention is arranged at Fig. 4 A;
Fig. 5 is provided with top view anodal and negative pole for the circuit layer of another embodiment of the present invention;
Fig. 6 A is the top view that the circuit layer of further embodiment of this invention is located at substrate;
Fig. 6 B is the cutaway view of the C-C direction of Fig. 6 A;
Fig. 7 is the flow chart of preferred embodiment of the present invention.
The figure number explanation:
5 radiators, 7 double-screw bolts, 10 substrates
13 perforation, 14 fixing holes, 15 pilot holes
17 grooves, 20 circuit layers, 21 positive poles
22 negative poles, 23 holes, 24 fixing holes
27 perforation of 25 pilot holes, 26 connection electrode
28 insulated columns, 30 anodal pin 35 negative pole pins
41 openings, 42 cylinders are covered in 40 reflections
45 pilot holes, 50 LED wafer, 60 lens modules
71 anodal 72 negative poles
Embodiment:
Further understand and understanding for the juror is had architectural feature of the present invention and the effect reached, sincerely help with preferred embodiment and cooperate detailed explanation, illustrate as after:
See also Fig. 1 and Fig. 2, be the stereogram and the exploded view of preferred embodiment of the present invention; As shown in the figure, the present invention includes that a substrate 10, a circuit layer 20, a plurality of anodal pin 30, a plurality of negative pole pin 35, a reflection cover 40, a plurality of LED wafer 50 and a lens module 60, substrate 10 of the present invention, it can be metal substrate, and be provided with a plurality of holes 13, a plurality of fixing hole 14 and a pilot hole 15, circuit layer 20 is located at substrate 10, and circuit layer 20 is provided with anodal 21 and one negative pole 22 and a plurality of connection electrode 26.
In addition, shown in Fig. 3 A and Fig. 3 B, circuit layer 20 is with respect to the position of hole 13, fixing hole 14 and the pilot hole 15 of substrate 10, also be provided with a plurality of holes 23, a plurality of fixing hole 24 and a pilot hole 25 respectively, reflection lid 40 of the present invention, be to be located on this circuit layer 20, this reflection lid 40 is provided with a plurality of openings 41,41 one-tenth matrix forms of this opening are arranged, shown in Fig. 4 A and Fig. 4 B, the position of this opening 41 is with respect between the positive pole 21 of circuit layer 20 and the connection electrode 26 and with respect between negative pole 22 and the connection electrode 26.
In addition, reflection covers 40 with respect to the hole 13 of substrate 10 with circuit layer 20,23, be provided with a plurality of cylinders 42, cylinder 42 is arranged in hole 13,23, make substrate 10, circuit layer 20 covers 40 groups with reflection and is made as one, because of the lower diameter of cylinder 42 greater than upper diameter, so with hole 13, during 23 cooperations, can make substrate 10, circuit layer 20 covers 40 with reflection and closely cooperates, so can avoid the situation of separating, and then influence is used, reflection is covered 40 pilot holes 25 with respect to circuit layer 20 and is provided with a pilot hole 45 in addition, can make the present invention by pilot hole 45,25,15 assemblings, one radiator 5, it is a metallic object, radiator 5 is provided with a double-screw bolt 7, and pilot hole 45,25,15 is a screw, so radiator 5 spiral shells can be located at substrate 10, and then prevents and use when of the present invention, the heat energy that is produced, the present invention also can only have substrate 10 to be provided with pilot hole 15.
In addition, reflection covers 40 when being arranged at circuit layer 20, one insulated column 28 that will wear hollow is in each fixing hole 14,24, for plugging anodal pin 30 and negative pole pin 35, anodal pin 30 passes substrate 10 with negative pole pin 35, and the positive pole 21 with circuit layer 20 is electrically connected with negative pole 22 respectively, when can making anodal pin 30 plug with negative pole pin 35, this insulated column 28 do not contact with substrate 10, avoid anodal pin 30, negative pole pin 35 contacts with the substrate 10 of tool conduction and is short-circuited, the setting of anodal pin 30 and negative pole pin 35, can be for being inserted in control circuit board, to connect the usefulness of establishing external power source.
See also Fig. 4 C, as shown in the figure, each LED wafer 50, be arranged at each this opening 41 respectively, being positioned at the positive pole of this LED wafer 50 on circuit layer 20 right sides and this positive pole 21 of circuit layer 20 is electrically connected, and the connection electrode 26 of negative pole and circuit layer 20 is electrically connected, in addition, the positive pole that is positioned at the LED wafer 50 in circuit layer 20 left sides is that the connection electrode 26 with circuit layer 20 is electrically connected, and being negative pole 22 with circuit layer 20, negative pole is electrically connected, so be equivalent to the LED wafer 50 of both sides is connected in series mutually, the mode of above-mentioned electric connection can be utilized the routing mode.
See also Fig. 5, the top view of anodal and negative pole is set for the circuit layer of another embodiment of the present invention, the embodiment that this embodiment is different from above-mentioned Fig. 3 A is, the set connection electrode 26 of Fig. 3 A is for being used to be connected in series the usefulness of all LED wafer 50, and this embodiment circuit layer 70 only is provided with two anodal 71 and one negative poles 72, and reflection is covered 40 opening 41 promptly with respect to positive pole 71 and negative pole 72, the positive pole of each LED wafer 50 and negative pole are electrically connected at the positive pole 71 and negative pole 72 of circuit layer 20 respectively, make LED wafer 50 all mutually and connect, the electrode of hence one can see that circuit layer 20 can be according to user demand, and changes design.
From the above, the present invention is by circuit layer 20 being set in substrate 10, and a plurality of electrodes are set in circuit layer 20, be electrically connected at electrode for LED wafer 50, and utilize anodal pin 30 to be arranged in circuit layer 20 and to wear substrate 10 with negative pole pin 35, and and the electrode of circuit layer 20 is electrically connected, so when using matrix form light-emitting diode of the present invention, the circuit board that can directly anodal pin 30 and negative pole pin 35 be inserted in the desire installing can use, and must must not utilize the bonding wire mode as the matrix form light-emitting diode of commonly using, to be electrically connected with circuit board, so matrix form light-emitting diode facility that the present invention commonly uses on using, in addition, the present invention is provided with pilot hole 15 in substrate 10, can conveniently set up a radiator 5, uses the radiating efficiency that increases the matrix form light-emitting diode, bad can improve classical matrix formula LED heat radiating, as to cause lifetime of LED to lower problem.
Again, in order to improve the radiating efficiency of LED wafer 50 more, shown in Fig. 6 A and Fig. 6 B, substrate 10 and circuit layer 20 covers 40 opening 41 with respect to reflection position is respectively equipped with a groove 17 and bores a hole 27, promptly prolong and stretch to substrate 10 as opening 41, and LED wafer 50 promptly is arranged at groove 17, directly contact with substrate 10, the heat energy that LED wafer 50 is produced in using can easierly see through substrate 10 conduction, does not need an as above embodiment, see through circuit layer 20 and transfer to substrate 10 again, dispel the heat, and can promote the reflection efficiency of reflection LED wafer 50 issued light lines simultaneously, and then increase collection efficiency.
See also Fig. 7, it is for the flow chart of preferred embodiment of the present invention; As shown in the figure, when making is of the present invention, at first carry out step S1, substrate 10 is provided, it is provided with fixing hole 14, more can be provided with pilot hole 15 in addition, for installing radiator 5; Then, carry out step S2, circuit layer 20 is set in substrate 10, circuit layer 20 is provided with fixing hole 24, and is provided with positive pole 21, negative pole 22 and connection electrode 26, with serial connection LED wafer 50, perhaps as shown in Figure 5, only be provided with anodal 71 with negative pole 72, with and sending and receiving optical diode wafer 50.
Then, carry out step S3, reflection is set covers 40 in circuit layer 20, cover 40 and come off after being provided with for fear of reflection, set-up mode can be provided with hole 13,23 at substrate 10 and circuit layer 20, covers 40 and is provided with cylinder 42 and reflect, and be located at hole 13,23, and insulated column 28 is set in substrate 10 and circuit layer 20, insulated column 28 promptly is set, also can only insulated column 28 be arranged in substrate 10 in fixing hole 14,24; Continue, carry out step S4, LED wafer 50 is set covers 40 opening 41 in reflection; Afterwards, carry out step S5, anodal pin 30 and negative pole pin 35 are set in substrate 10, and anodal pin 30 wore insulated column 28 and substrate 10 with negative pole pin 35, anodal pin 30 is electrically connected with the positive pole 21 of circuit layer 20, and the negative pole 22 of negative pole pin 35 and circuit layer 20 is electrically connected.
At last, carry out step S6, lens module 60 is set covers 40, with capping LED wafer 50 in reflection; In addition, conducted by substrate 10 for the heat energy that LED wafer 50 is produced in using is easier, more can be before carrying out step S4, a plurality of perforation 27 are set in circuit layer 20, each perforation 27 more is provided with a plurality of grooves 17 in substrate 10 in addition with respect to each opening 41, each groove 17 is also with respect to each opening 41, make LED wafer 50 be arranged at groove 17, directly contact, so can improve the radiating efficiency and the collection efficiency of LED wafer 50 with substrate 10.
In sum, matrix form Light-emitting Diode And Its Making Method of the present invention, be by circuit layer being set at substrate and being provided with electrode, for the serial connection or and sending and receiving optical diode wafer, in addition, more electrical anodal pin and the negative pole pin of being provided with of the positive pole of circuit layer and negative pole, anodal pin and negative pole pin wore substrate, so when using matrix form light-emitting diode of the present invention, can directly be inserted in the circuit board of desire installing, conveniently installing and using, and then improve installation effectiveness and reduce installation time, more can pilot hole be set in addition in substrate, conveniently to set up radiator, perhaps groove is set and places LED wafer,, and then increase useful life with the raising radiating efficiency in substrate.
The above, it only is preferred embodiment of the present invention, be not to be used for limiting scope of the invention process, all according to the described shape of claim scope of the present invention, structure, feature and principle etc. change and modify, all should be contained in the claim scope of the present invention.
Claims (12)
1. matrix form light-emitting diode is characterized in that it includes:
One substrate;
One circuit layer is located at this substrate, and this circuit layer is provided with at least one positive pole and at least one negative pole;
One reflection lid is located at this circuit layer, and this reflection is covered with plural opening, and this opening is arranged;
A plurality of LED wafer are arranged at each this opening respectively, and each this LED wafer all has an anodal and negative pole, and this positive pole of this LED wafer and this positive pole of this negative pole and this circuit layer and this negative pole are electrically connected;
At least one anodal pin wore this substrate and electrically connected with this positive pole of this circuit layer;
At least one negative pole pin wore this substrate and electrically connected with this negative pole of this circuit layer;
Wherein this substrate can be a metal substrate;
This substrate more is equipped with a plurality of insulated columns, and this positive pole pin and this negative pole pin are arranged in this insulated column respectively.
2. matrix form light-emitting diode as claimed in claim 1 is characterized in that this substrate more is provided with a pilot hole, and this pilot hole can assemble a radiator.
3. matrix form light-emitting diode as claimed in claim 1, it is characterized in that this substrate and this circuit layer more are provided with a plurality of holes, this reflection lid then is provided with a cylinder with respect to each this hole, the lower diameter of this cylinder is greater than upper diameter, and this cylinder is located at this hole.
4. matrix form light-emitting diode as claimed in claim 1, it is characterized in that, this circuit layer more is provided with a perforation with respect to the position of each this opening, and this substrate then is respectively equipped with a groove with respect to the position of each this opening, and this LED wafer is arranged at this groove.
5. matrix form light-emitting diode as claimed in claim 1 is characterized in that this circuit layer more is provided with at least one connection electrode, and it is positioned between this positive pole and this negative pole of this circuit layer, is connected in series mutually for this LED wafer.
6. matrix form light-emitting diode as claimed in claim 1 is characterized in that, more includes a lens module, and it is this reflection lid and this LED wafer of capping.
7. a matrix form manufacturing method for LED is characterized in that, includes the following step:
One substrate is provided;
One circuit layer is set in this substrate, this circuit layer is provided with at least one positive pole and at least one negative pole;
One reflection is set is placed on this circuit layer, this reflection is covered with a plurality of holes, and this opening is matrix form and arranges;
A plurality of LED wafer this opening in this reflection lid is set, and each this LED wafer all has an anodal and negative pole, and this positive pole of this LED wafer and this positive pole of this negative pole and this circuit layer and this negative pole are electrically connected;
At least one anodal pin and at least one negative pole pin are set in this substrate, this positive pole pin and this negative pole pin are electrically connected with this positive pole and this negative pole of this circuit layer respectively;
Wherein be placed in the step of this circuit layer in a reflection is set, more include a step, it wears a plurality of insulated columns in this substrate, wears for this positive pole pin and this negative pole pin.
8. matrix form manufacturing method for LED as claimed in claim 7 is characterized in that, in the step that a substrate is provided, more includes a step, and it is provided with a pilot hole in this substrate, and this pilot hole can assemble a radiator.
9. matrix form manufacturing method for LED as claimed in claim 7, it is characterized in that, in a circuit layer being set in the step of this substrate, this circuit layer more is provided with at least one connection electrode between this positive pole and this negative pole, is connected in series mutually for this LED wafer.
10. matrix form manufacturing method for LED as claimed in claim 7 is characterized in that, is placed in the step of this circuit layer in a reflection is set, and more includes the following step:
A plurality of holes are set in this circuit layer and this substrate;
A plurality of cylinders are set in this reflection lid, the lower diameter of this cylinder is greater than upper diameter, and this cylinder is located at this hole.
11. matrix form manufacturing method for LED as claimed in claim 7 is characterized in that, in a plurality of LED wafer being set before the step of this opening of this reflection lid, more includes the following step:
The a plurality of perforation in this circuit layer is set, and each should be bored a hole with respect to each this opening;
A plurality of grooves are set in this substrate, each this groove is with respect to each this opening, and this LED wafer is arranged at this groove.
12. matrix form manufacturing method for LED as claimed in claim 7, it is characterized in that,, more include a step at least one anodal pin and at least one negative pole pin being set after the step of this substrate, it is provided with a lens module in this reflection lid, this LED wafer of capping.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100877599A CN100409440C (en) | 2005-08-08 | 2005-08-08 | Matrix type LED and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100877599A CN100409440C (en) | 2005-08-08 | 2005-08-08 | Matrix type LED and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1734762A CN1734762A (en) | 2006-02-15 |
| CN100409440C true CN100409440C (en) | 2008-08-06 |
Family
ID=36077058
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005100877599A Active CN100409440C (en) | 2005-08-08 | 2005-08-08 | Matrix type LED and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100409440C (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102072422B (en) * | 2010-09-30 | 2015-09-02 | 福建省万邦光电科技有限公司 | Encapsulating structure |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07248730A (en) * | 1994-03-08 | 1995-09-26 | Rohm Co Ltd | Multiplex led lamp group and led display device using the same and production thereof |
| CN1341966A (en) * | 2001-09-29 | 2002-03-27 | 葛世潮 | Light-emitting device of high-power light-emitting diode |
| CN1466782A (en) * | 2001-08-28 | 2004-01-07 | ���µ繤��ʽ���� | Loghting device using LED |
| CN1516088A (en) * | 2003-01-08 | 2004-07-28 | 炬鑫科技股份有限公司 | Module device of LED point matrix display |
-
2005
- 2005-08-08 CN CNB2005100877599A patent/CN100409440C/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07248730A (en) * | 1994-03-08 | 1995-09-26 | Rohm Co Ltd | Multiplex led lamp group and led display device using the same and production thereof |
| CN1466782A (en) * | 2001-08-28 | 2004-01-07 | ���µ繤��ʽ���� | Loghting device using LED |
| CN1341966A (en) * | 2001-09-29 | 2002-03-27 | 葛世潮 | Light-emitting device of high-power light-emitting diode |
| CN1516088A (en) * | 2003-01-08 | 2004-07-28 | 炬鑫科技股份有限公司 | Module device of LED point matrix display |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1734762A (en) | 2006-02-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100435362C (en) | Light-emitting diode | |
| US8197100B2 (en) | LED lighting device | |
| US20070247852A1 (en) | Multi chip LED lamp | |
| CN103426989B (en) | Light emitting semiconductor device and its manufacturing method, light emitting module and lighting apparatus | |
| CN102472482A (en) | Solid state lighting device with improved heatsink | |
| CN101005733A (en) | Method for producing thin semiconductor lighting plane integrated optic source module | |
| CN102818140A (en) | Self-radiating LED (Light-Emitting Diode) lamp bead and luminous module thereof | |
| CN201779503U (en) | Light-emitting diode lamp with better radiating effect | |
| CN100454595C (en) | Light emitting-diode module group | |
| CN100590869C (en) | High-power LED encapsulation structure | |
| CN101650007A (en) | Power alternating current LED light source | |
| CN201475720U (en) | LED lamp with radiating circuit board | |
| CN100409440C (en) | Matrix type LED and manufacturing method thereof | |
| CN201096332Y (en) | LED lighting lamp directly switching 220v alternating-current electric network | |
| KR20110134109A (en) | Head for led street light | |
| CN201014253Y (en) | Luminous diode lighting device and radiating module thereof | |
| CN203010551U (en) | Light emitting diode (LED) aluminum substrate | |
| CN2926814Y (en) | LED illuminating light | |
| CN201487755U (en) | LED ceiling lamp | |
| CN101586797A (en) | High-radiating light-emitting diode module and light-emitting diode lamps | |
| CN101440915B (en) | Combined type polar heat radiation high power LED electronic lamp | |
| CN202797091U (en) | Discrete wafer dispensing and sealing LED lamp integration | |
| CN102374410B (en) | LED (light emitting diode) bulb device | |
| CN103307470A (en) | Light emitting device | |
| CN102011971A (en) | LED (light emitting diode) lighting module |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |