CN100407411C - 在sonos闪存中的双倍密度核心栅极 - Google Patents
在sonos闪存中的双倍密度核心栅极 Download PDFInfo
- Publication number
- CN100407411C CN100407411C CN028192834A CN02819283A CN100407411C CN 100407411 C CN100407411 C CN 100407411C CN 028192834 A CN028192834 A CN 028192834A CN 02819283 A CN02819283 A CN 02819283A CN 100407411 C CN100407411 C CN 100407411C
- Authority
- CN
- China
- Prior art keywords
- memory cell
- oxide
- dielectric medium
- cell control
- group
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 claims abstract description 36
- 239000004065 semiconductor Substances 0.000 claims abstract description 27
- 239000012774 insulation material Substances 0.000 claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 54
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 53
- 229920005591 polysilicon Polymers 0.000 claims description 52
- 235000012239 silicon dioxide Nutrition 0.000 claims description 27
- 239000000377 silicon dioxide Substances 0.000 claims description 27
- 239000011810 insulating material Substances 0.000 claims description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 14
- 150000004767 nitrides Chemical class 0.000 claims description 14
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- 239000010703 silicon Substances 0.000 claims description 14
- 230000003647 oxidation Effects 0.000 claims description 13
- 238000007254 oxidation reaction Methods 0.000 claims description 13
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 10
- 230000015572 biosynthetic process Effects 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 9
- 230000008021 deposition Effects 0.000 claims description 8
- 229910052712 strontium Inorganic materials 0.000 claims description 7
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims description 7
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 4
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 4
- 229910001936 tantalum oxide Inorganic materials 0.000 claims description 4
- 229910052454 barium strontium titanate Inorganic materials 0.000 claims description 3
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 2
- 229910052788 barium Inorganic materials 0.000 claims 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims 1
- IATRAKWUXMZMIY-UHFFFAOYSA-N strontium oxide Chemical class [O-2].[Sr+2] IATRAKWUXMZMIY-UHFFFAOYSA-N 0.000 claims 1
- 239000010410 layer Substances 0.000 description 112
- 238000007667 floating Methods 0.000 description 15
- 239000000428 dust Substances 0.000 description 14
- 238000005229 chemical vapour deposition Methods 0.000 description 9
- 238000002513 implantation Methods 0.000 description 9
- 239000011248 coating agent Substances 0.000 description 7
- 238000000576 coating method Methods 0.000 description 7
- 238000000151 deposition Methods 0.000 description 7
- 239000007943 implant Substances 0.000 description 7
- 238000003860 storage Methods 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 238000000059 patterning Methods 0.000 description 6
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 6
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 5
- 230000008901 benefit Effects 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 230000006870 function Effects 0.000 description 5
- 239000011229 interlayer Substances 0.000 description 5
- 238000012163 sequencing technique Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 239000005380 borophosphosilicate glass Substances 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 239000005360 phosphosilicate glass Substances 0.000 description 4
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
- 229910002367 SrTiO Inorganic materials 0.000 description 3
- 210000003323 beak Anatomy 0.000 description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000009279 wet oxidation reaction Methods 0.000 description 3
- 229910015801 BaSrTiO Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- -1 Silicon Oxide Nitride Chemical class 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- HOTKXGWBYYQTME-UHFFFAOYSA-N CCO[Si]([O-])([O-])[O-].CCO[Si](O)(O)O.[B+3].P Chemical compound CCO[Si]([O-])([O-])[O-].CCO[Si](O)(O)O.[B+3].P HOTKXGWBYYQTME-UHFFFAOYSA-N 0.000 description 1
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- JOXCDOKKASTCHR-UHFFFAOYSA-N [Si](O)(O)(O)O.[P] Chemical compound [Si](O)(O)(O)O.[P] JOXCDOKKASTCHR-UHFFFAOYSA-N 0.000 description 1
- VWAGSGYWIGYIIZ-UHFFFAOYSA-N [Si](O)(O)(O)O.[P].[B] Chemical compound [Si](O)(O)(O)O.[P].[B] VWAGSGYWIGYIIZ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 235000001729 chan in Nutrition 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical group 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000002085 persistent effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- NHDHVHZZCFYRSB-UHFFFAOYSA-N pyriproxyfen Chemical compound C=1C=CC=NC=1OC(C)COC(C=C1)=CC=C1OC1=CC=CC=C1 NHDHVHZZCFYRSB-UHFFFAOYSA-N 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- GOLXNESZZPUPJE-UHFFFAOYSA-N spiromesifen Chemical compound CC1=CC(C)=CC(C)=C1C(C(O1)=O)=C(OC(=O)CC(C)(C)C)C11CCCC1 GOLXNESZZPUPJE-UHFFFAOYSA-N 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/40—EEPROM devices comprising charge-trapping gate insulators characterised by the peripheral circuit region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Landscapes
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
Claims (15)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/971,483 US6630384B1 (en) | 2001-10-05 | 2001-10-05 | Method of fabricating double densed core gates in sonos flash memory |
US09/971,483 | 2001-10-05 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1582493A CN1582493A (zh) | 2005-02-16 |
CN100407411C true CN100407411C (zh) | 2008-07-30 |
Family
ID=25518442
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN028192834A Expired - Lifetime CN100407411C (zh) | 2001-10-05 | 2002-09-30 | 在sonos闪存中的双倍密度核心栅极 |
Country Status (8)
Country | Link |
---|---|
US (1) | US6630384B1 (zh) |
EP (1) | EP1436833A2 (zh) |
JP (1) | JP4482704B2 (zh) |
KR (1) | KR20050032502A (zh) |
CN (1) | CN100407411C (zh) |
AU (1) | AU2002362647A1 (zh) |
TW (1) | TW587331B (zh) |
WO (1) | WO2003032393A2 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103946961A (zh) * | 2011-11-16 | 2014-07-23 | 圆益Ips股份有限公司 | 薄膜制造方法 |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6835630B2 (en) | 2002-06-19 | 2004-12-28 | Promos Technologies, Inc. | Capacitor dielectric structure of a DRAM cell and method for forming thereof |
US6917544B2 (en) | 2002-07-10 | 2005-07-12 | Saifun Semiconductors Ltd. | Multiple use memory chip |
US6797565B1 (en) * | 2002-09-16 | 2004-09-28 | Advanced Micro Devices, Inc. | Methods for fabricating and planarizing dual poly scalable SONOS flash memory |
US7136304B2 (en) | 2002-10-29 | 2006-11-14 | Saifun Semiconductor Ltd | Method, system and circuit for programming a non-volatile memory array |
US6797567B2 (en) * | 2002-12-24 | 2004-09-28 | Macronix International Co., Ltd. | High-K tunneling dielectric for read only memory device and fabrication method thereof |
US7178004B2 (en) | 2003-01-31 | 2007-02-13 | Yan Polansky | Memory array programming circuit and a method for using the circuit |
US6939767B2 (en) * | 2003-11-19 | 2005-09-06 | Freescale Semiconductor, Inc. | Multi-bit non-volatile integrated circuit memory and method therefor |
US6962849B1 (en) | 2003-12-05 | 2005-11-08 | Advanced Micro Devices, Inc. | Hard mask spacer for sublithographic bitline |
US6872609B1 (en) | 2004-01-12 | 2005-03-29 | Advanced Micro Devices, Inc. | Narrow bitline using Safier for mirrorbit |
US6958272B2 (en) * | 2004-01-12 | 2005-10-25 | Advanced Micro Devices, Inc. | Pocket implant for complementary bit disturb improvement and charging improvement of SONOS memory cell |
US6989320B2 (en) * | 2004-05-11 | 2006-01-24 | Advanced Micro Devices, Inc. | Bitline implant utilizing dual poly |
US7176113B1 (en) | 2004-06-07 | 2007-02-13 | Spansion Llc | LDC implant for mirrorbit to improve Vt roll-off and form sharper junction |
US20060046403A1 (en) * | 2004-08-31 | 2006-03-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of forming separated charge-holding regions in a semiconductor device |
US7638850B2 (en) | 2004-10-14 | 2009-12-29 | Saifun Semiconductors Ltd. | Non-volatile memory structure and method of fabrication |
US7652320B2 (en) * | 2005-03-03 | 2010-01-26 | Macronix International Co., Ltd. | Non-volatile memory device having improved band-to-band tunneling induced hot electron injection efficiency and manufacturing method thereof |
TWI246749B (en) * | 2005-03-08 | 2006-01-01 | Powerchip Semiconductor Corp | Method of fabricating a non-volatile memory |
US8053812B2 (en) | 2005-03-17 | 2011-11-08 | Spansion Israel Ltd | Contact in planar NROM technology |
US7804126B2 (en) | 2005-07-18 | 2010-09-28 | Saifun Semiconductors Ltd. | Dense non-volatile memory array and method of fabrication |
US7977227B2 (en) * | 2005-08-15 | 2011-07-12 | Macronix International Co., Ltd. | Method of manufacturing a non-volatile memory device |
US7414282B2 (en) * | 2005-08-15 | 2008-08-19 | Macronix International Co., Ltd. | Method of manufacturing a non-volatile memory device |
US7668017B2 (en) | 2005-08-17 | 2010-02-23 | Saifun Semiconductors Ltd. | Method of erasing non-volatile memory cells |
US7808818B2 (en) | 2006-01-12 | 2010-10-05 | Saifun Semiconductors Ltd. | Secondary injection for NROM |
US8253452B2 (en) | 2006-02-21 | 2012-08-28 | Spansion Israel Ltd | Circuit and method for powering up an integrated circuit and an integrated circuit utilizing same |
US7692961B2 (en) | 2006-02-21 | 2010-04-06 | Saifun Semiconductors Ltd. | Method, circuit and device for disturb-control of programming nonvolatile memory cells by hot-hole injection (HHI) and by channel hot-electron (CHE) injection |
US7760554B2 (en) | 2006-02-21 | 2010-07-20 | Saifun Semiconductors Ltd. | NROM non-volatile memory and mode of operation |
US7701779B2 (en) | 2006-04-27 | 2010-04-20 | Sajfun Semiconductors Ltd. | Method for programming a reference cell |
US20080096357A1 (en) * | 2006-10-20 | 2008-04-24 | Spansion Llc | Method for manufacturing a memory device |
US9281198B2 (en) * | 2013-05-23 | 2016-03-08 | GlobalFoundries, Inc. | Method of fabricating a semiconductor device including embedded crystalline back-gate bias planes |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5424569A (en) * | 1994-05-05 | 1995-06-13 | Micron Technology, Inc. | Array of non-volatile sonos memory cells |
WO1998006140A1 (de) * | 1996-08-01 | 1998-02-12 | Siemens Aktiengesellschaft | Verfahren zum betrieb einer speicherzellenanordnung |
WO1999049516A1 (de) * | 1998-03-24 | 1999-09-30 | Infineon Technologies Ag | Speicherzellenanordnung und verfahren zu ihrer herstellung |
WO1999049518A1 (de) * | 1998-03-24 | 1999-09-30 | Infineon Technologies Ag | Speicherzellenanordnung und verfahren zu ihrer herstellung |
WO2000054335A1 (en) * | 1999-03-09 | 2000-09-14 | Koninklijke Philips Electronics N.V. | Semiconductor device comprising a non-volatile memory |
Family Cites Families (17)
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US4173766A (en) | 1977-09-16 | 1979-11-06 | Fairchild Camera And Instrument Corporation | Insulated gate field-effect transistor read-only memory cell |
US5168334A (en) | 1987-07-31 | 1992-12-01 | Texas Instruments, Incorporated | Non-volatile semiconductor memory |
US5268319A (en) * | 1988-06-08 | 1993-12-07 | Eliyahou Harari | Highly compact EPROM and flash EEPROM devices |
JP3358663B2 (ja) | 1991-10-25 | 2002-12-24 | ローム株式会社 | 半導体記憶装置およびその記憶情報読出方法 |
US5644533A (en) | 1992-11-02 | 1997-07-01 | Nvx Corporation | Flash memory system, and methods of constructing and utilizing same |
US6201277B1 (en) * | 1993-08-31 | 2001-03-13 | Texas Instruments Incorporated | Slot trench isolation for flash EPROM |
US5467038A (en) * | 1994-02-15 | 1995-11-14 | Hewlett-Packard Company | Quick resolving latch |
DE19505293A1 (de) | 1995-02-16 | 1996-08-22 | Siemens Ag | Mehrwertige Festwertspeicherzelle mit verbessertem Störabstand |
US5996603A (en) | 1996-03-21 | 1999-12-07 | Dupler; Marion Dale | Apparatus and method for an in-line valve-controllable outlet |
US5768192A (en) | 1996-07-23 | 1998-06-16 | Saifun Semiconductors, Ltd. | Non-volatile semiconductor memory cell utilizing asymmetrical charge trapping |
US6768165B1 (en) | 1997-08-01 | 2004-07-27 | Saifun Semiconductors Ltd. | Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping |
US5963465A (en) | 1997-12-12 | 1999-10-05 | Saifun Semiconductors, Ltd. | Symmetric segmented memory array architecture |
TW358236B (en) | 1997-12-19 | 1999-05-11 | Nanya Technology Corp | Improved local silicon oxidization method in the manufacture of semiconductor isolation |
US6030871A (en) | 1998-05-05 | 2000-02-29 | Saifun Semiconductors Ltd. | Process for producing two bit ROM cell utilizing angled implant |
US6215148B1 (en) | 1998-05-20 | 2001-04-10 | Saifun Semiconductors Ltd. | NROM cell with improved programming, erasing and cycling |
JP4012341B2 (ja) * | 1999-07-14 | 2007-11-21 | 株式会社ルネサステクノロジ | 半導体集積回路装置 |
DE10051483A1 (de) * | 2000-10-17 | 2002-05-02 | Infineon Technologies Ag | Nichtflüchtige Halbleiterspeicherzellenanordnung und Verfahren zu deren Herstellung |
-
2001
- 2001-10-05 US US09/971,483 patent/US6630384B1/en not_active Expired - Lifetime
-
2002
- 2002-09-30 JP JP2003535257A patent/JP4482704B2/ja not_active Expired - Lifetime
- 2002-09-30 KR KR1020047005018A patent/KR20050032502A/ko not_active Application Discontinuation
- 2002-09-30 EP EP02800870A patent/EP1436833A2/en not_active Withdrawn
- 2002-09-30 CN CN028192834A patent/CN100407411C/zh not_active Expired - Lifetime
- 2002-09-30 AU AU2002362647A patent/AU2002362647A1/en not_active Abandoned
- 2002-09-30 WO PCT/US2002/031330 patent/WO2003032393A2/en active Application Filing
- 2002-10-03 TW TW091122815A patent/TW587331B/zh not_active IP Right Cessation
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5424569A (en) * | 1994-05-05 | 1995-06-13 | Micron Technology, Inc. | Array of non-volatile sonos memory cells |
WO1998006140A1 (de) * | 1996-08-01 | 1998-02-12 | Siemens Aktiengesellschaft | Verfahren zum betrieb einer speicherzellenanordnung |
WO1999049516A1 (de) * | 1998-03-24 | 1999-09-30 | Infineon Technologies Ag | Speicherzellenanordnung und verfahren zu ihrer herstellung |
WO1999049518A1 (de) * | 1998-03-24 | 1999-09-30 | Infineon Technologies Ag | Speicherzellenanordnung und verfahren zu ihrer herstellung |
WO2000054335A1 (en) * | 1999-03-09 | 2000-09-14 | Koninklijke Philips Electronics N.V. | Semiconductor device comprising a non-volatile memory |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103946961A (zh) * | 2011-11-16 | 2014-07-23 | 圆益Ips股份有限公司 | 薄膜制造方法 |
Also Published As
Publication number | Publication date |
---|---|
WO2003032393A2 (en) | 2003-04-17 |
US6630384B1 (en) | 2003-10-07 |
EP1436833A2 (en) | 2004-07-14 |
JP2005506692A (ja) | 2005-03-03 |
KR20050032502A (ko) | 2005-04-07 |
JP4482704B2 (ja) | 2010-06-16 |
AU2002362647A1 (en) | 2003-04-22 |
CN1582493A (zh) | 2005-02-16 |
WO2003032393A3 (en) | 2003-10-09 |
TW587331B (en) | 2004-05-11 |
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