CN100404408C - Non-refrigeration infrared detector heat insulation substrate preparation method - Google Patents
Non-refrigeration infrared detector heat insulation substrate preparation method Download PDFInfo
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- CN100404408C CN100404408C CNB200510110416XA CN200510110416A CN100404408C CN 100404408 C CN100404408 C CN 100404408C CN B200510110416X A CNB200510110416X A CN B200510110416XA CN 200510110416 A CN200510110416 A CN 200510110416A CN 100404408 C CN100404408 C CN 100404408C
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- silicon
- porous silicon
- heat insulation
- infrared detector
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- 239000000758 substrate Substances 0.000 title claims abstract description 26
- 238000009413 insulation Methods 0.000 title claims abstract description 15
- 238000005057 refrigeration Methods 0.000 title claims abstract description 12
- 238000002360 preparation method Methods 0.000 title claims description 9
- 229910021426 porous silicon Inorganic materials 0.000 claims abstract description 36
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 21
- 230000003647 oxidation Effects 0.000 claims abstract description 20
- 238000000034 method Methods 0.000 claims abstract description 13
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 11
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 9
- 230000007704 transition Effects 0.000 claims abstract description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 16
- 229910052710 silicon Inorganic materials 0.000 claims description 16
- 239000010703 silicon Substances 0.000 claims description 16
- 230000008569 process Effects 0.000 claims description 5
- 238000007743 anodising Methods 0.000 claims description 4
- 238000003980 solgel method Methods 0.000 claims description 4
- 238000005260 corrosion Methods 0.000 claims description 3
- 230000007797 corrosion Effects 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 239000007792 gaseous phase Substances 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 12
- 239000013078 crystal Substances 0.000 abstract description 4
- 238000005516 engineering process Methods 0.000 description 12
- 239000010408 film Substances 0.000 description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 230000005855 radiation Effects 0.000 description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 238000001514 detection method Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000005485 electric heating Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000004038 photonic crystal Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000006096 absorbing agent Substances 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 235000019441 ethanol Nutrition 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229920000742 Cotton Polymers 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 238000013019 agitation Methods 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013440 design planning Methods 0.000 description 1
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- 230000005284 excitation Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
- 230000005616 pyroelectricity Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Abstract
The present invention relates to a method for preparing a heat insulation substrate of a non-refrigeration infrared detector, which belongs to the micro electromechanical system field. The anodic oxidation method is taken to prepare porous silicon; then a silicon nitride film transition layer is deposited on the porous silicon; thus, the heat insulation substrate of the non-refrigeration infrared detector is prepared. The sequent devices are prepared on the silicon nitride film layer. Since an intermediate transition layer is inserted between the porous silicon and the infrared material, the uneven surface caused by the porous silicon is improved; the crystal quality of the infrared material can be enhanced in large amplitude; consequently, the performance of devices is enhanced.
Description
Technical field
The invention provides a kind of preparation method of non-refrigeration infrared detector heat insulation substrate, belong to the MEMS field.
Background technology
Infrared sensor is divided into two classes, a kind of is the photon type sensor, mainly utilize the interband of low-gap semiconductor to absorb caused photovoltaic effect and come sense infrared emissions, because the thermal agitation under the room temperature has been enough to excite band-to-band transition, so need to use cooled with liquid nitrogen.Another kind of is non-refrigeration sensor, and the variation of temperature of mainly utilizing infra-red radiation to cause by the minor variations of detecting temperature, is come detection of a target object.As: the detector of thermal reactor and many pyroelectricity classes.This class sensor does not need cooled with liquid nitrogen, so be called non-refrigeration sensor.
The key of making non-refrigerating infrared sensor is to make absorber heat insulation, so that the temperature rise that infrared ray causes that absorber absorbed is enough to be detected.For a long time, this heat insulation processing mainly is to utilize hanging bridge, for example adopts silicon nitride bridge to wait to realize, this hanging bridge structure can adopt the method for back side borehole or surface micro to make.Yet owing to be hanging structure, fracture takes place or produces to disturb in the sensor of this hanging bridge structure easily under the situation of being clashed into or shaking.In addition, make the hanging bridge structure and occupied space greatly, make this class detector probe unit size difficulty reduce, the raising of the resolution ratio of focal plane arrays (FPA) is difficulty relatively.For this reason, there has been report to utilize the silicon island that at the bottom of heat shield liner such as glass, makes isolation fully to make Infrared Detectors.Yet because the temperature that can bear of glass is lower than 600 ℃, this has brought difficulty for subsequent technique as the making of diffusion and annealing process, therefore only is applicable to the making of operative sensor.In addition, adopt silicon nitride bridge technology also to limit the size of each cell sensor, reach 50 * 50 microns
2Be difficult to.
Porous silicon since its can visible emitting be studied for many years, in addition because characteristics such as its good oxidation characteristic and dielectric loss be low are considered to one of desirable substrate of making passive device.In addition, the silica of loose structure also is good heat-barrier material.The relevant low thermal conductivity of porous silicon of utilizing is made the more existing reports of heat-proof device.Yet, find when directly on porous silicon, making infrared acquisition material such as electric heating film, because the loose structure on surface has caused the degradation of thin-film material.Thereby offset the heat insulation benefit of bringing of porous silicon.
Obviously, if can between porous silicon and infra-red material, insert a kind of intermediate layer, improve, thereby improve the performance of device because the air spots that porous silicon causes can increase substantially the crystal mass of infra-red material.
In addition, infrared on from the head-on radiation to the sensing unit has greatly and may flow out from the back side with the form of radiation.In solar cell, raise the efficiency by lower floor's deposit reflectance coating in the p-i-n structure, therefore, will can in porous silicon, enable to stop the infrared cotton suittings of the wave band that survey by the change of micro-structural? utilize the characteristics of the refractive index of porous silicon with the cell size variation, people have produced the photonic crystal of 1.5 microns infrared rays being realized total reflection, obviously, if change different cell size porous silicons thickness, just may design and produce out the photonic crystal that plays the total reflection effect at far infrared band, like this, just might stop of the radiation of specific band infrared ray, and then improve detection efficient from substrate.
Summary of the invention
The object of the present invention is to provide a kind of preparation method of non-refrigeration infrared detector heat insulation substrate easy and simple to handle, solve because the uneven electric heating film degradation that causes of porous silicon surface, thus the problem of reduction device performance.
For realizing purpose of the present invention, the preparation method of non-refrigeration infrared detector heat insulation substrate provided by the present invention may further comprise the steps:
The first step adopts anodizing to make porous silicon on silicon substrate;
Utilize the growth of porous silicon mainly to rely on these characteristics of hole, excite the hole, can be implemented on this class substrate and grow thick porous silicon from the illumination of the silicon substrate back side.The specific implementation method of anodizing is at document Porous Silicon:A Review of the Technology andPotential Markets for an Emerging Material, and Technical Insights 2000 has detailed introduction.The present invention preferably utilizes low-resistance silicon, and promptly resistivity is 0.01 Ω cm left and right sides n-type or p-type silicon, and porous silicon oxidation current density is at 10～80mA/cm
2Between, the porous silicon pore structure of Zhi Zuoing is thinner more even like this.
Utilize silicon substrate directly to make some transistors as needs, resistance silicon is that resistivity is at 1～10 Ω cm in then needing to select.For this class silicon chip, adopt the thickness of the porous silicon that general anode oxidation method often obtains very shallow, have only 3～5 microns.Utilize preparation method of the present invention, utilize the growth of porous silicon mainly to rely on these characteristics of hole, excite the hole, can be implemented on this class substrate and grow thick porous silicon from the illumination of the silicon substrate back side.
In order to improve the detection efficient of Infrared Detectors, the cell size difference of utilizing different current density anodic oxidations to form, according to the refractive index difference, can utilize transfer matrix to calculate, with the design of the band gap of photonic crystal at detecting band (as 8～12 microns of characteristics of human body's wave bands).General p-(100) silicon chip of selecting on the technology, the high cell size corrosion electric current density of resistivity 0.01～0.02 Ω cm is 60～80mA/cm
2, and low cell size is 10～30mA/cm
2. in addition, owing to before the silicon nitride film deposit, must carry out suitable oxidation, therefore the situation after when the design of photon band gap, must taking into account oxidation, in order to obtain the energy gap of broad, it is necessary that the refractive index of different cell sizes is had than big-difference, generally requires high cell size layer complete oxidation, and the oxidation rate of low cell size is relatively slow, therefore be in the incomplete oxidation state, to obtain bigger average effective refractive index.Suitably the control oxidization time is this technology key of success.In order to improve effect of heat insulation, the present invention also proposes and need carry out certain oxidation processes to porous silicon.Between 400～900 ℃ of the general selections of oxidation, adopt dried oxygen technology, temperature 5 minutes to 120 minutes.
In second step, using plasma strengthens chemical vapour deposition (CVD) (PECVD) method or sol-gel process deposit one deck transition zone silicon nitride film on porous silicon, is made into the non-refrigeration infrared detector heat insulation substrate.
Deposit one deck transition layer film on porous silicon, as infrared or hygrosensor, can absorb the infrared ray of 8-14 micron waveband because of silicon nitride film, therefore can be on porous silicon deposition silicon nitride film, using plasma strengthens chemical gaseous phase depositing process this area researcher is common process, and adopting reacting gas is silane and ammonia, also has diluent gas nitrogen in addition, underlayer temperature is 280 ℃～450 ℃, generally adopts the excitation of plasma of the 13.3MHz of the about 500W of power.The pressure of gas and flow also depend on instrument itself.Some reference parameters can find in the semiconductor technology of many public publications.The thickness of silicon nitride depends on the time of deposit, is generally about 1 micron to be advisable.
Like this, non-refrigeration infrared detector heat insulation substrate of the present invention just completes, and element manufacturing is thereafter just carried out on this one deck silicon nitride film.
Remarkable result of the present invention is, adopts porous silicon as thermal insulation layer, and technology is simple, and has been proved to be in full force and effect.This technology has been saved traditional needed complicated technology of making hanging bridge, saved the technology cost, and also saved, improved integrated level because of occupied big quantity spaces such as making hanging bridges, help the making of focal plane arrays (FPA), also improved the resolution ratio of focus planardetector.Yield rate and reliability all significantly improve simultaneously.
Remarkable result of the present invention is, has inserted a kind of intermediate layer between porous silicon and infra-red material, has improved because the air spots that porous silicon causes can increase substantially the crystal mass of infra-red material, thereby has improved the performance of device.This intermediate layer can be Si as suggested in the present invention
3N
4, also can be the other materials that adopts PECVD or sol-gel process deposit.
Remarkable result of the present invention also is, the bottom porous silicon can be made into periodically sandwich construction (being equivalent to be made into 1-D photon crystal), can effectively suppress infrared ray and see through substrate, improve effective ultrared collection efficiency, and then improve detection efficient to external radiation.
The specific embodiment
Embodiment 1: ferroelectric IR detectro
Silicon substrate adopts p (100), and resistivity is 0.01～0.02 Ω cm, carries out anodic oxidation, electric current 50mA/cm under (40%HF and absolute ethyl alcohol volume ratio 1: 1) room temperature in 20% HF alcohol blend
2, (scope is at 10～80mA/cm
2) 5 minutes.600 ℃ of oxidations 30 minutes.
Substrate also can utilize the multilayer film technology of porous silicon, adopts 60-80mA/cm
2And 10-30mA/cm
2The alternating anodes oxidation, two kinds of thickness is respectively 2 microns and 1.2 microns (anodised speed and temperature relation relatively, present embodiment has adopted low temperature-22 ℃ condition, and each layer time is respectively 45sec and 105sec), 10 cycles alternately, 600 ℃ of oxidations 120 minutes.
In the apparatus for plasma chemical vapor deposition of routine, underlayer temperature is 280 ℃, at NH
3, SiH
4In the atmosphere, reacting under plasma exciatiaon forms Si
3N
4. deposit thickness is 1 micron.
On the substrate of above-mentioned making, at first sputter or evaporation one deck Pt/Ti, typical thickness 80nm/20nm, and then employing sol-gel process, the certain thickness electric heating film of method such as sputtering method or pulsed laser deposition deposit, relevant thickness and element manufacturing subsequently require and can be undertaken by the bibliographical information requirement.
Embodiment 2: infrared thermocouple type detector
Silicon substrate adopts p (100), and resistivity is 0.01～0.02 Ω cm, carries out anodic oxidation, electric current 50mA/cm under (40%HF and absolute ethyl alcohol volume ratio 1: 1) room temperature in 20% HF alcohol blend
2, 400 ℃ of oxidations 30 minutes.
In the sol-gel equipment of routine, underlayer temperature is 280 ℃, at NH
3, SiH
4, reacting under plasma exciatiaon in the atmosphere forms Si
3N
4. deposit thickness is 1 micron.
On this specialized substrates of making, make thermocouple, adopt two kinds of material ways of deposit with different work functions, for example polysilicon and aluminium, go out temperature measuring unit and cold-trap by design planning, thereby produce cold junction and hot junction, so just can produce with the infra-red heat galvanic couple is the Infrared Detectors of sensing unit, and this manufacturing process is similar with thermal reactor type Infrared Detectors.
Claims (3)
1. the preparation method of a non-refrigeration infrared detector heat insulation substrate is characterized in that may further comprise the steps:
The first step adopts anodizing to make porous silicon on silicon substrate;
In second step, using plasma strengthens chemical gaseous phase depositing process or sol-gel process deposit one deck transition zone silicon nitride film on porous silicon, is made at the bottom of the uncooled ir temperature sensor heat shield liner.
2. the preparation method at the bottom of the uncooled ir temperature sensor heat shield liner as claimed in claim 1 is characterized in that the silicon substrate that adopts in the first step is n-type or p-type low-resistance silicon.
3. the preparation method at the bottom of the uncooled ir temperature sensor heat shield liner as claimed in claim 1, it is characterized in that the first step adopts anodizing to make the porous silicon multilayer film, and porous silicon carried out oxidation, select p-(100) silicon chip, the high cell size corrosion electric current density of resistivity 0.01～0.02 Ω cm is 60～80mA/cm
2, and low cell size corrosion electric current density is 10～30mA/cm
2, dried oxygen between oxidation is selected 400 ℃～900 ℃, obtains the porous silicon multilayer film to the distinctive infra-red bands total reflection at 5 minutes to 120 minutes time.
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|---|---|---|---|
| CNB200510110416XA CN100404408C (en) | 2005-11-16 | 2005-11-16 | Non-refrigeration infrared detector heat insulation substrate preparation method |
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|---|---|---|---|
| CNB200510110416XA CN100404408C (en) | 2005-11-16 | 2005-11-16 | Non-refrigeration infrared detector heat insulation substrate preparation method |
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| Publication Number | Publication Date |
|---|---|
| CN1799987A CN1799987A (en) | 2006-07-12 |
| CN100404408C true CN100404408C (en) | 2008-07-23 |
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|---|---|---|---|
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Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000097765A (en) * | 1998-09-25 | 2000-04-07 | Matsushita Electric Works Ltd | Sensor |
| CN1251945A (en) * | 1998-10-21 | 2000-05-03 | 李韫言 | Thermal radiation infrared sensor for fine machining |
| US6100525A (en) * | 1986-07-14 | 2000-08-08 | Lockheed Martin Corporation | Uncooled infrared detector |
| CN1281262A (en) * | 2000-06-07 | 2001-01-24 | 中国科学院上海冶金研究所 | Technology for making infrared sensor of micro-mechanical thermoelectric pile |
| CN1334594A (en) * | 2001-08-24 | 2002-02-06 | 清华大学 | Process for mfg. micromechanical inductor with suspended structure on single surface of silicon substrate |
| CN1405892A (en) * | 2002-11-15 | 2003-03-26 | 清华大学 | Silicon-based film transistor room-temperature infrared detector |
| CN1457423A (en) * | 2001-03-16 | 2003-11-19 | 精工爱普生株式会社 | Infrared detection element and method for fabricating the same and equipment for measuring temperature |
| CN1484280A (en) * | 2003-08-11 | 2004-03-24 | 中国科学院上海技术物理研究所 | Low resistance silicon substrate containing oxidized porous silicon and preparation thereof |
| WO2005041246A1 (en) * | 2003-10-27 | 2005-05-06 | Matsushita Electric Works, Ltd. | Infrared light emitting device and gas sensor using same |
-
2005
- 2005-11-16 CN CNB200510110416XA patent/CN100404408C/en not_active Expired - Fee Related
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6100525A (en) * | 1986-07-14 | 2000-08-08 | Lockheed Martin Corporation | Uncooled infrared detector |
| JP2000097765A (en) * | 1998-09-25 | 2000-04-07 | Matsushita Electric Works Ltd | Sensor |
| CN1251945A (en) * | 1998-10-21 | 2000-05-03 | 李韫言 | Thermal radiation infrared sensor for fine machining |
| CN1281262A (en) * | 2000-06-07 | 2001-01-24 | 中国科学院上海冶金研究所 | Technology for making infrared sensor of micro-mechanical thermoelectric pile |
| CN1457423A (en) * | 2001-03-16 | 2003-11-19 | 精工爱普生株式会社 | Infrared detection element and method for fabricating the same and equipment for measuring temperature |
| CN1334594A (en) * | 2001-08-24 | 2002-02-06 | 清华大学 | Process for mfg. micromechanical inductor with suspended structure on single surface of silicon substrate |
| CN1405892A (en) * | 2002-11-15 | 2003-03-26 | 清华大学 | Silicon-based film transistor room-temperature infrared detector |
| CN1484280A (en) * | 2003-08-11 | 2004-03-24 | 中国科学院上海技术物理研究所 | Low resistance silicon substrate containing oxidized porous silicon and preparation thereof |
| WO2005041246A1 (en) * | 2003-10-27 | 2005-05-06 | Matsushita Electric Works, Ltd. | Infrared light emitting device and gas sensor using same |
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|---|---|
| CN1799987A (en) | 2006-07-12 |
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