CN100403535C - Static discharge device capable of controlling triggering voltage - Google Patents
Static discharge device capable of controlling triggering voltage Download PDFInfo
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- CN100403535C CN100403535C CNB2005100710016A CN200510071001A CN100403535C CN 100403535 C CN100403535 C CN 100403535C CN B2005100710016 A CNB2005100710016 A CN B2005100710016A CN 200510071001 A CN200510071001 A CN 200510071001A CN 100403535 C CN100403535 C CN 100403535C
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Abstract
The present invention relates to an electrostatic discharge (ESD) device with the structure of a parasitical silicon controlled rectifier (SCR) and the property of controllable trigger voltage. The present invention can realize the adjustable trigger voltage of the ESD device by adjusting the distance between the margin of a light doping well and the margin of a heavy doping region positioned at the margin of the light doping well. The trigger voltage can be set as a specific value between the minimum and the maximum.
Description
Technical field
The present invention relates to a kind of Electrostatic Discharge device, particularly relate to a kind of static discharge device with parasitic silicon controlled rectifier (SCR) structure and may command trigger voltage characteristic.
Background technology
Integrated circuit is used static discharge device widely, burns because of electrostatic breakdown to prevent it.Usually, static discharge device takies the chip area of many integrated circuits, therefore increases the cost of making.Moreover because the transport properties and the static discharge device of lead have large tracts of land usually, the electric current of the static discharge device of flowing through is also inhomogeneous, therefore may influence its electric characteristics (for example breakdown voltage of static discharge device).
Static discharge device with parasitic silicon controlled rectifier (SCR) structure also is common in the various application.How to make parasitic silicon controlled rectifier have stable and controllable trigger voltage is the major subjects of current design static discharge device.Therefore, the static discharge device with the improvement of may command trigger voltage and electrical characteristic will be craved for by industry.
Summary of the invention
The objective of the invention is to, a kind of static discharge device of may command trigger voltage of new structure is provided, technical problem to be solved is to make it with under the shape condition that need not adjust processing procedure, can determine the trigger voltage of static discharge device on demand, thereby be suitable for practicality more.
Based on above-mentioned and other purpose, the present invention proposes a kind of static discharge device of may command trigger voltage, comprises a P type substrate, a N type well, one the one N+ type district, one the one P+ type district, one the 2nd N+ type district, one the 2nd P+ type district, one the 3rd N+ type district, one first electrode and one second electrode.This N type well is formed in this P type substrate.The one N+ type district is formed in this P type substrate and outside this N type well.The one P+ type district is formed in this P type substrate and outside this N type well, and isolated with one first field oxide (field oxides) between a P+ type district and the N+ type district.The 2nd N+ type district is disposed in this N type well.The 2nd P+ type district is disposed in this N type well, and the 3rd N+ type district is disposed between the 2nd P+ type district and one second field oxide, and isolated with this second field oxide between the 3rd a N+ type district and the N+ type district.Wherein the adjacent edge in this second field oxide and the 3rd N+ type district to the edge of this N type well is a preset distance.This first electrode connects a P+ district and a N+ type district via one first electrical conductor.This second electrode connects the 2nd N+ type district and the 2nd P+ type district via one second electrical conductor.Wherein, by adjusting this preset distance, can determine a trigger voltage of this static discharge device.
From another viewpoint, the present invention proposes a kind of static discharge device of may command trigger voltage, comprises a P type substrate, a N type embeding layer (buried layer), a N type well, a p type wells, one the 4th N+ type district, one the 4th P+ type district, one the 5th P+ type district, one the 5th N+ type district, one the 6th P+ type district, a third electrode and one the 4th electrode.This N type embeding layer is formed in this P type substrate.This N type well is formed on this N type embeding layer.This p type wells is formed on this N type embeding layer and in abutting connection with this N type well.The 4th N+ type district is formed in this N type well.The 4th P+ type district is formed in this N type well, and isolated with one the 3rd field oxide between the 4th P+ type district and the 4th N+ type district.The 5th P+ type district is formed in this p type wells.The 5th N+ type district is formed in this p type wells, and the 6th P+ type district is disposed between the 5th N+ type district and one the 4th field oxide, and isolated with the 4th field oxide between the 6th P+ type district and the 4th P+ type district.Wherein the adjacent edge in the 4th field oxide and the 6th P+ type district to the edge of this p type wells is a preset distance.This third electrode connects the 4th N+ type district and the 4th P+ type district via one the 3rd electrical conductor.The 4th electrode connects the 5th P+ type district and the 5th N+ type district via one the 4th electrical conductor.Wherein, by adjusting this preset distance, the edge of this p type wells is positioned between the scope in the 4th field oxide and the 6th P+ type district, and determines a trigger voltage of this static discharge device.
The present invention has the static discharge device of parasitic silicon controlled rectifier (SCR) structure and may command trigger voltage characteristic because of employing, and, realize the adjustable trigger voltage of this static discharge device by the distance between modulation light dope well edge and the heavily doped region edge.Therefore, can need not change under the situation of integrated circuit manufacture process, and determine the trigger voltage of static discharge device on demand.
The present invention compared with prior art has tangible advantage and beneficial effect.Via as can be known above-mentioned, the invention relates to a kind of Electrostatic Discharge device with parasitic silicon controlled rectifier (SCR) structure and may command trigger voltage characteristic.Edge and the distance between the heavily doped region edge at light dope well edge by modulation light dope well realize the adjustable trigger voltage of this static discharge device.This trigger voltage can be made as between a minimum value to the particular value between the maximum.
Above-mentioned explanation only is the general introduction of technical solution of the present invention, for can clearer understanding technological means of the present invention, and can be implemented according to the content of specification, and for above-mentioned and other purposes, feature and advantage of the present invention can be become apparent, below especially exemplified by preferred embodiment, and conjunction with figs., be described in detail as follows.
Description of drawings
Fig. 1 is according to a kind of cross sectional side view with static discharge device of parasitic silicon controlled rectifier structure of embodiments of the invention explanation.
Fig. 2 A-Fig. 2 C is the cross sectional side view according to the relative position of embodiment of the invention explanation N type well edge and N+ type area edge.
Fig. 3 works as N type well according to embodiment of the invention explanation partly to surround or surround fully N+ type district, and trigger voltage is to the curve chart of the preset distance of N type well edge and N+ type area edge.
Fig. 4 is the cross sectional side view according to another embodiment of the present invention explanation static discharge device.
100,1100: static discharge device
101:N type embeding layer
102:P type substrate
104a, 104b, 104c, 1204a, 1204b:N+ type doped region
106,1106:N type well
202a, 202b, 1102a, 1102b, 1102c:P+ type doped region
302: the second electrical conductors
304: the first electrical conductors
310,1310: field oxide
The preset distance at d:N type well edge and doped region tandem edge
V
TG: trigger voltage
1108:P type well
Embodiment
Reach technological means and the effect that predetermined goal of the invention is taked for further setting forth the present invention, below in conjunction with accompanying drawing and preferred embodiment, its embodiment of static discharge device, structure, feature and the effect thereof of the may command trigger voltage that foundation the present invention is proposed, describe in detail as after.
Below implement example explanation the present invention and how to overcome the shortcoming of known static discharge device, and reduce the area and the manufacturing cost of integrated circuit simultaneously.According to embodiments of the invention, in a N type well, put a plurality of N+ type districts and a plurality of P+ type district and form a static discharge device.Arrange formation one doped region tandem continuously in alternate mode each other with this a plurality of N+ types district and be formed in this N type well in this a plurality of P+ types district.The two ends of this doped region tandem are N+ type district.Adjust this N type well edge relative position of the N+ type area edge of doped region tandem therewith, can be in order to the trigger voltage of modulation static discharge device.
In addition, static discharge device is formed at a weld pad (pad) below, and interconnects with metal between the two.Because weld pad is a desirable transmitter, the electric current that flow to static discharge device from weld pad can be filled part to divide to dissipate, and it has improved the usefulness of static discharge device.Static discharge device is formed at the area that integrated circuit also can be saved in the weld pad below.Therefore, reduced manufacturing cost.
Fig. 1 is one embodiment of the invention, illustrates to have may command trigger voltage V
TGThe cross sectional side view of a static discharge device 100.Please refer to shown in Figure 1, this static discharge device 100 is formed in the P type substrate 102, and it comprises a N type well 106, with field oxide (field oxide) isolated one the one N+ type district 104c and one the one P+ type district 202b, a field oxide 310, one the 2nd N+ type district 104a, one the 2nd P+ type district 202a and one the 3rd N+ type district 104b.Wherein, the 2nd P+ type district 202a, this N type well 106 form an equivalent transistor with this P type substrate 102, and this N type well 106, this P type substrate 102 then form another equivalent transistor with a N+ type district 104c.Field oxide 310 is in order to isolate the 3rd a N+ type district 104b and a N+ type district 104c.One first electrode is to connect a P+ type district 202b and a N+ type district 104c via one first electrical conductor 304.One second electrode connects the 2nd N+ type district 104a and the 2nd P+ type district 202a via the second electrical conductor 302.Electrically conductor 302 and 304 can metal material for it.In present embodiment, this second electrode electrically is to be connected to this weld pad, and electrically is to be connected to a power voltage terminal or a ground voltage terminal with this first electrode.Have the knack of also visual its needs of this skill person, change this first electrode is electrically connected to this weld pad, and this second electrode is electrically connected to this power voltage terminal or this ground voltage terminal.
When this static discharge device 100 was triggered by electrostatic phenomenon, interconnective complementary doped region (for example the 2nd N+ type district 104a and the 2nd P+ type district 202a) operated in different voltage quasi positions.As shown in Figure 1, two equivalent transistors and two interior resistance form the thyristor (SCR) of an equivalence.When the electrostatic potential increase, the immediate current of the static discharge device 100 of flowing through just makes between the interconnective complementary doped region 104a-202a by interior resistance and causes voltage difference between the 104c-202b.The connection of two equivalent transistors pass is to have presented equivalent thyristor as shown in Figure 1 then.Complementary doped region is represented the doped region of different kenels, for example N type doped region and P type doped region.
By the relative position at the edge of the edge of adjusting this N type well 106 and this doped region tandem (for example the 3rd N+ type district 104b), but this trigger voltage V of this static discharge device 100 of modulation
TGBelow will represent aforementioned the two relative position with adjustable predetermined distance d.
Moreover this static discharge device 100 can form in weld pad (not illustrating) below, to save the area and the manufacturing cost of integrated circuit.
Fig. 2 A be explanation when this N type well 106 when partly surrounding the 3rd N+ type district 104b, the cross sectional side view of the relative position at these N type well 106 edges and 104b edge, the 3rd N+ type district.When the width of this N type well 106 is W
1The time, between the 3rd 104b edge, N+ type district and this N type well 106 edges, form a predetermined distance d
1This trigger voltage V
TGWith predetermined distance d
1The two is inverse relation each other.Work as predetermined distance d
1The value of reaching capacity d
1, sat, A point as shown in Figure 3, this trigger voltage V at this moment
TGWill reach a low saturation voltage V
TG, min
Fig. 2 B illustrates when this N type well 106 surrounds the 3rd N+ type district 104b fully the cross sectional side view to the position at these N type well 106 edges and 104b edge, the 3rd N+ type district.When the width of this N type well 106 is W
2The time, between the 3rd 104b edge, N+ type district and this N type well 106 edges, form a predetermined distance d
2Trigger voltage V
TGWith this predetermined distance d
2The two is proportional relation each other.Work as predetermined distance d
2The value of reaching capacity d
2.5at, C point as shown in Figure 3, trigger voltage V at this moment
TGWill reach a high saturation voltage V
TG, max
Fig. 2 C illustrates when the width of this N type well 106 just equals doped region tandem width the cross sectional side view of the relative position at these N type well 106 edges and 104b edge, the 3rd N+ type district.That is these N type well 106 edges and 104b edge, the 3rd N+ type district trim in line just.As the B point of Fig. 3, it represents predetermined distance d
1With d
2Be zero, and a corresponding trigger voltage is V
TG0
Please refer to shown in Figure 3ly, it is explanation this trigger voltage V
TGCurve chart to this predetermined distance d.In Fig. 3, trunnion axis is represented this predetermined distance d.With person's predetermined distance d
1Increase to the saturation value d that A is ordered
1, sat, this trigger voltage V
TGThen and then descend.With person's predetermined distance d
2Increase to the saturation value d that C is ordered
2, sat, trigger voltage V
TGThen and then rise.Therefore, this trigger voltage V
TGThe change of change (from the A point to the C point) and this predetermined distance d be linear scale each other.Under the same process condition, can set trigger voltage V by the modulation predetermined distance d
TGBe any particular value (except saturation region 10a shown in Figure 3 and 10b).Trigger voltage V is represented in this saturation region
TGCan't change according to the increase of predetermined distance d.
Fig. 4 is the cross sectional side view that a static discharge device 1100 is described according to another embodiment of the present invention.This static discharge device 1100 is complementary structures of this static discharge device 100, and its expression the present invention has the static discharge device of may command trigger voltage characteristic can also complementary processing procedure manufacturing.
In this static discharge device 1100, have the N type embeding layer 101 that is formed in the P type substrate 102, be formed at a N type well 1106 and a p type wells 1108 on this N type embeding layer 101.This p type wells 1108 can form by P type ion doping, or directly to form by this N type embeding layer 101 and the geometric areas that this N type well 1106 surrounds in this P type substrate 102.Static discharge device 1100 is just in time opposite with the static discharge device 100 of Fig. 1, and the equivalent transistor of Fig. 4 also equivalent transistor with Fig. 1 is opposite.Wherein, one the 4th P+ type district 1102c, this N type well 1106, this p type wells 1108 and one the 5th N+ type district 1204a form equivalent thyristor.One third electrode connects the 4th P+ type district 1102c and one the 4th N+ type district 1204b via one the 3rd electrical conductor.One the 4th electrode connects the 5th N+ type district 1204a and one the 5th P+ type district 1102a via one the 4th electrical conductor.One field oxide 1310 is in order to isolate one the 6th P+ type district 1102b and the 4th P+ type district 1102c.
This static discharge device 1100 can also be adjusted the two relative position of the edge of this p type wells 1108 and this doped region tandem (for example the 6th P+ type district 1102b) edge, can adjust the predetermined distance d that indicates among Fig. 4, with this trigger voltage V of modulation static discharge device 1100
TG
The above, it only is preferred embodiment of the present invention, be not that the present invention is done any pro forma restriction, though the present invention discloses as above with preferred embodiment, yet be not in order to limit the present invention, any those skilled in the art, in not breaking away from the technical solution of the present invention scope, when the technology contents that can utilize above-mentioned announcement is made a little change or is modified to the equivalent embodiment of equivalent variations, in every case be the content that does not break away from technical solution of the present invention, according to technical spirit of the present invention to any simple modification that above embodiment did, equivalent variations and modification all still belong in the scope of technical solution of the present invention.
Claims (13)
1. the static discharge device of a may command trigger voltage is characterized in that it comprises:
One P type substrate;
One N type well is formed in this P type substrate;
One the one N+ type district is formed in this P type substrate and outside this N type well;
One the one P+ type district is formed in this P type substrate and outside this N type well, and isolated with one first field oxide between a P+ type district and the N+ type district;
One the 2nd N+ type district is disposed in this N type well;
One the 2nd P+ type district is disposed in this N type well;
One the 3rd N+ type district, be disposed between the 2nd P+ type district and one second field oxide, wherein isolated between the 3rd a N+ type district and the N+ type district with this second field oxide, and the adjacent edge in this second field oxide and the 3rd N+ type district to the edge of this N type well is a preset distance;
One first electrode, it connects a P+ type district and a N+ type district via one first electrical conductor; And
One second electrode, it connects the 2nd N+ type district and the 2nd P+ type district via one second electrical conductor;
Wherein, make the zone of edge between this second field oxide and the 3rd N+ type district of this N type well, and determine a trigger voltage of this static discharge device by adjusting this preset distance.
2. static discharge device according to claim 1 is characterized in that the wherein said first electrical conductor and this second electrical conductor are metal.
3. static discharge device according to claim 1, it is characterized in that wherein when this N type well surrounds the 3rd N+ type district fully, this trigger voltage and this preset distance of this static discharge device are proportional, and when this N type well partly surrounds the 3rd N+ type district, this trigger voltage of this static discharge device and this preset distance relation of being inversely proportional to.
4. static discharge device according to claim 3 is characterized in that wherein this preset distance of modulation by the relative position at the edge in the edge of this N type well of configuration and the 3rd N+ type district, adjusts this trigger voltage of this static discharge device with linearity.
5. static discharge device according to claim 4, the two is adjacent to it is characterized in that wherein said the 2nd N+ type district and the 2nd P+ type district, and the two is adjacent the 2nd P+ type district and the 3rd N+ type district.
6. according to claim 4 or 5 described static discharge devices, it is characterized in that wherein said first electrode and this second electrode the two one of be electrically connected to a weld pad, and the two another is electrically connected to a power voltage terminal or a ground voltage terminal.
7. the static discharge device of a may command trigger voltage is characterized in that it comprises:
One P type substrate;
One N type embeding layer is formed in this P type substrate;
One N type well is formed on this N type embeding layer;
One p type wells is formed on this N type embeding layer and in abutting connection with this N type well;
One the 4th N+ type district is formed in this N type well;
One the 4th P+ type district is formed in this N type well, and isolated with one the 3rd field oxide between the 4th P+ type district and the 4th N+ type district;
One the 5th P+ type district is formed in this p type wells;
One the 5th N+ type district is formed in this p type wells;
One the 6th P+ type district, be disposed between the 5th N+ type district and one the 4th field oxide, wherein isolated between the 6th P+ type district and the 4th P+ type district with the 4th field oxide, and the adjacent edge in the 4th field oxide and the 6th P+ type district to the edge of this p type wells is a preset distance;
One third electrode, it connects the 4th N+ type district and the 4th P+ type district via one the 3rd electrical conductor; And
One the 4th electrode, it connects the 5th P+ type district and the 5th N+ type district via one the 4th electrical conductor;
Wherein, make the zone of edge between the 4th field oxide and the 6th P+ type district of this p type wells, and determine a trigger voltage of this static discharge device by adjusting this preset distance.
8. static discharge device according to claim 7 is characterized in that the wherein said the 3rd electrical conductor and the 4th electrical conductor are metal.
9. static discharge device according to claim 7, it is characterized in that wherein when this p type wells surrounds the 6th P+ type district fully, this trigger voltage and this preset distance of this static discharge device are proportional, and when this p type wells partly surrounds the 6th P+ type district, this trigger voltage of this static discharge device and this preset distance relation of being inversely proportional to.
10. static discharge device according to claim 9 is characterized in that wherein this preset distance of modulation by the relative position at the edge in the edge of this p type wells of configuration and the 6th P+ type district, adjusts this trigger voltage of this static discharge device with linearity.
11. static discharge device according to claim 10 is characterized in that wherein said the 5th P+ type district and the 5th N+ type district are adjacent, and the 5th N+ type district and the 6th P+ type district are adjacent.
12. according to claim 10 or 11 described static discharge devices, it is characterized in that wherein said third electrode and the 4th electrode the two one of be electrically connected to a weld pad, and the two another is electrically connected to a power voltage terminal or a ground voltage terminal.
13. static discharge device according to claim 7 is characterized in that wherein said p type wells is to form with P type ion doping, or directly forms with the geometric areas of being surrounded by this N type embeding layer and this N type well in this P type substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100710016A CN100403535C (en) | 2005-05-18 | 2005-05-18 | Static discharge device capable of controlling triggering voltage |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100710016A CN100403535C (en) | 2005-05-18 | 2005-05-18 | Static discharge device capable of controlling triggering voltage |
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| CN1866511A CN1866511A (en) | 2006-11-22 |
| CN100403535C true CN100403535C (en) | 2008-07-16 |
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| CNB2005100710016A Expired - Fee Related CN100403535C (en) | 2005-05-18 | 2005-05-18 | Static discharge device capable of controlling triggering voltage |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2013044692A1 (en) | 2011-09-29 | 2013-04-04 | 无锡华润上华半导体有限公司 | Electrostatic discharge protective device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5972379A (en) * | 1995-02-14 | 1999-10-26 | Sequus Pharmaceuticals, Inc. | Liposome composition and method for administering a quinolone |
| US6365924B1 (en) * | 1998-06-19 | 2002-04-02 | National Semiconductor Corporation | Dual direction over-voltage and over-current IC protection device and its cell structure |
| US6365940B1 (en) * | 1999-12-21 | 2002-04-02 | Texas Instruments Incorporated | High voltage trigger remote-cathode SCR |
| US6521952B1 (en) * | 2001-10-22 | 2003-02-18 | United Microelectronics Corp. | Method of forming a silicon controlled rectifier devices in SOI CMOS process for on-chip ESD protection |
-
2005
- 2005-05-18 CN CNB2005100710016A patent/CN100403535C/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5972379A (en) * | 1995-02-14 | 1999-10-26 | Sequus Pharmaceuticals, Inc. | Liposome composition and method for administering a quinolone |
| US6365924B1 (en) * | 1998-06-19 | 2002-04-02 | National Semiconductor Corporation | Dual direction over-voltage and over-current IC protection device and its cell structure |
| US6365940B1 (en) * | 1999-12-21 | 2002-04-02 | Texas Instruments Incorporated | High voltage trigger remote-cathode SCR |
| US6521952B1 (en) * | 2001-10-22 | 2003-02-18 | United Microelectronics Corp. | Method of forming a silicon controlled rectifier devices in SOI CMOS process for on-chip ESD protection |
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