CN100399593C - Edge-emitted light-emitting diode and its packaging mirror - Google Patents
Edge-emitted light-emitting diode and its packaging mirror Download PDFInfo
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- CN100399593C CN100399593C CNB2005100992099A CN200510099209A CN100399593C CN 100399593 C CN100399593 C CN 100399593C CN B2005100992099 A CNB2005100992099 A CN B2005100992099A CN 200510099209 A CN200510099209 A CN 200510099209A CN 100399593 C CN100399593 C CN 100399593C
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Abstract
This invention relates to edge transmission light diode and its sealing lens, which comprises bottom surface, incidence surface, reflection surface, first refraction surface and second and third surfaces, wherein, LED generates light from incidence surface into sealing lens with part of light reflected to second refraction surface and goes out of sealing lens along first path with remaining light through first refraction surface and third refraction spruce out of sealing lens; the first refraction surface and reflection surface have one transit surface without transit crossing surface.
Description
[technical field]
The present invention is relevant a kind of light-emitting diode, particularly a kind of edge-emitted type light-emitting diode and encapsulating mirror thereof.
[background technology]
Generally speaking, traditional light-emitting diode (LED; Light Emitting Diodes) bright dipping mode is vertical with LED wafer exiting surface and present (seeing Figure 1A) in Lang Baixing (Lambert ion) Energy distribution mode for going out light path, is used in traffic sign, illumination usually or other guide the utilization of formula signs.But be subjected to the restriction of its Energy distribution profile, (the luminous intensity for example in the time of if several light-emitting diodes will being made optical property and mix, coloured light mixes ... Deng), usually need after the position of exiting surface one segment distance that leaves light-emitting diode, could obtain the effect (seeing Figure 1B) of mixing, so have the one section invalid distance L 1 that can't mix.Yet, if the light emitting-type flattening of single light-emitting diode can significantly can be shortened invalid distance.
Lumileds company has delivered the light-emitting diode of a kind of edge-emitted type (SideEmitting) in SID seminar in 2003, wherein disclosed a kind of edge-emitted type light-emitting diode (as shown in Figure 2) with specific package structure, adopt the edge-emitted type light-emitting diode of this encapsulating structure only to have the light energy (less than 10%) of fraction to penetrate by top (the central optical axis direction 14 of LED wafer), most light energy then can direction from the side penetrate, and in practical application, this edge-emitted type light-emitting diode can be by attaching the light energy that an anti-dazzling screen 16 reflects its outgoing that makes progress above it, and also having obtained the patent of correlation technique, the said firm comprises United States Patent (USP) the 6th, 679, No. 621 " SIDE EMITTINGLED AND LENS ".
In addition in the 6th of aforementioned Lumileds company, 679, also disclosed another kind of encapsulating structure (as shown in Figure 3) in No. 621 United States Patent (USP)s, it includes: the plane of incidence 10, reflecting surface 11, first plane of refraction 12 and second plane of refraction 13, wherein first plane of refraction 12 has an oblique angle with the central optical axis 14 (Central Optic Axis) of LED wafer, and 13 of second planes of refraction are to connect first plane of refraction 12 and bottom surface 15 smooth-goingly.The light that sends by the LED wafer after the plane of incidence 10 enters this encapsulating structure mainly along two path P 1, P2 penetrates, wherein path P 1 is that light is after the plane of incidence 10 enters encapsulating structure, be reflected onto first plane of refraction 12 by inner full-reflection at reflecting surface 11, penetrate along path P 1 by first plane of refraction 12 then; 2 of path P are that light is after the plane of incidence 10 enters encapsulating structure, directly by second plane of refraction 13 and along path P 2 ejaculations.There is some following problem in the design of Fig. 3:
1. owing to only all light are divided into two light paths, cause easily producing " optical axis path overlap ", so that unsuitable reflection or refraction take place at two light path intersections.As shown in Figure 4, the overlapping interval α that between first plane of refraction 12 and second plane of refraction 13, has a light path, enter this overlapping interval α if enter the light of this encapsulating structure from the plane of incidence 10, will directly arrive at first plane of refraction 12 so that unsuitable reflection or refraction take place.
2. there is long and narrow part in the geometry of this encapsulating structure, causes the deficiency of structural strength easily.
3. because the many acute angles of profile are easy to generate the phenomenon that machining stress is concentrated when making manufacturing, cause deformation, and then its optical characteristics is changed.
[summary of the invention]
A purpose of the present invention, being that proposition is a kind of is difficult for producing optical axis path overlap effect so that unsuitable reflection or refraction take place in two light path intersections, and be difficult for producing the machining stress concentration phenomenon when making, it is stable to keep optical characteristics, and can strengthen the encapsulating mirror (lens) of the edge-emitted type light-emitting diode of mechanical strength.
Another object of the present invention, be to propose a kind of edge-emitted type light-emitting diode, the ray guidance that the LED wafer can be sent is towards the direction irradiation of side, to reach the purpose of light type flattening, make the bright dipping mode transfer to parallel and angular distribution more restrains, to promote collection efficiency with the LED exiting surface; More can reduce the influence that different LED crystal grain luminous efficiency difference is caused.
A kind of encapsulating mirror of the present invention is to be applied to a light source, it is characterized in that: include:
The bottom surface;
The plane of incidence is connected in this bottom surface, and its below is provided with this light source;
Reflecting surface forms an angle with the central optical axis of encapsulating mirror;
First plane of refraction;
First transition face is between this reflecting surface and this first plane of refraction;
Second plane of refraction is connected with this first plane of refraction;
The third reflect face is connected with this bottom surface; And
Second transition face is between this second plane of refraction and this third reflect face;
Wherein the light that provides of this light source enters the inside of this encapsulating mirror from this plane of incidence, and the light of a part is reflected onto this second plane of refraction at this reflecting surface, and light produces by this second plane of refraction after and reflects and penetrate this encapsulating mirror along first light path;
All the other enter the light of this encapsulating mirror inside from this plane of incidence, be directly to penetrate this encapsulating mirror along one second light path respectively, and directly penetrate this encapsulating mirror along one the 3rd light path by being refracted after this third reflect face by being refracted after this first plane of refraction.
Preferable possible embodiments of the present invention is to see through the geometry of redesign encapsulating mirror (lens) and then reach above-mentioned purpose; This encapsulating mirror is installed in the light emitting path of a light source, include: the bottom surface, the plane of incidence, reflecting surface, first plane of refraction, second plane of refraction and third reflect face, the a part of light that enters encapsulating mirror from the plane of incidence is reflected the face reflection after penetrated by second plane of refraction, remaining light then can directly penetrate encapsulating mirror from first plane of refraction and third reflect face respectively, therefore there is not the overlapping problem of light path, can avoid taking place unsuitable reflection or refraction to reduce light loss, this encapsulating mirror does not have too long and narrow geometry yet, can reduce the influence that machining stress causes.Edge-emitted type light-emitting diode proposed by the invention, has semiconductor luminescent device (as the LED wafer), an and encapsulating mirror, encapsulating mirror includes: the bottom surface, the plane of incidence, reflecting surface, first plane of refraction, second plane of refraction and third reflect face, the light that the LED wafer sends enters the inside of encapsulating mirror from the plane of incidence, the light of a part is reflected onto second plane of refraction at reflecting surface by inner full-reflection, towards the direction irradiation of side, all the other light that enter encapsulating mirror then directly reflect encapsulating mirror towards side by first plane of refraction and third reflect face then after utilizing second plane of refraction with light refraction.After light passed through reflecting surface, first plane of refraction, second plane of refraction and third reflect face, the direct of travel of light was corrected for horizontal direct of travel.
[description of drawings]
Figure 1A is the luminous smooth type figure of traditional LED wafer.
Figure 1B shows the light mixed distribution situation of utilizing a plurality of traditional LED wafers to carry out the optical property mixing.
Fig. 2 is a kind of eyeglass structure of known edge-emitted type light-emitting diode.
Fig. 3 is the eyeglass structure of another kind of known edge-emitted type light-emitting diode.
Fig. 4 is the light path distribution map in the eyeglass of known edge-emitted type light-emitting diode of Fig. 3.
Fig. 5 is the encapsulating mirror structural map of edge-emitted type light-emitting diode of the present invention.
Fig. 6 is the light path distribution map of edge-emitted type light-emitting diode of the present invention.
Fig. 7 A is the luminous smooth shape distribution map of edge-emitted type light-emitting diode of the present invention.
Fig. 7 B shows the light mixed distribution situation of utilizing a plurality of edge-emitted type light-emitting diodes of the present invention to carry out the optical property mixing.
[embodiment]
Relevant preferred embodiment of the present invention now cooperates graphic being described as follows.
Please refer to Fig. 5 according to the disclosed preferred embodiment of the present invention, wherein disclosed encapsulating mirror 20 comprises: bottom surface 21 (bottom surface), the plane of incidence 22 (incident surface), reflecting surface 23 (reflective surface), first plane of refraction 31 (first refractive surface), second plane of refraction 32 (second refractive surface) and third reflect face 33 (thirdrefractive surface), first transition face 34 and second transition face 35.This encapsulating mirror 20 can be used as for example packaging structure (as shown in Figure 6) of light-emitting diode (LED) 40 this light emitting semiconductor devices.
As shown in Figure 6, the light that LED wafer 40 sends enters the inside of encapsulating mirror 20 from the plane of incidence 22, the light of a part is reflected onto second plane of refraction 32 at reflecting surface 23 by inner full-reflection (internal total reflection), light is being reflected by producing after second plane of refraction 32, and penetrate encapsulating mirror 20 from the side along the first light path P1, all the other then are respectively directly by first plane of refraction 31 and third reflect face 33 from the light that the plane of incidence 22 enters encapsulating mirror 20, reflect encapsulating mirror 20 from the side along the second light path P2 and the 3rd light path P3 respectively then, and the first light path P1, the bearing of trend of the second light path P2 and the 3rd light path P3 perpendicular to the central optical axis C (central optical axis) of encapsulating mirror 20, shines towards the direction of the side of encapsulating mirror 20 in order to the ray guidance that LED wafer 40 is sent haply.
According to preferred embodiment of the present invention, reflecting surface 23 is in close proximity to the side of the central optical axis C of encapsulating mirror 20, and forms an angle with central optical axis C; Wherein first transition face 34 is between first plane of refraction 31 and reflecting surface 23, first plane of refraction 31 then is to connect the transition face 34 and second plane of refraction 32 smooth-goingly, angle between the central optical axis C of second plane of refraction 32 and encapsulating mirror 20 is by the angle decision of reflecting surface 23, between second plane of refraction 32 and third reflect face 33, also has second transition face 35, and third reflect face 33 has smooth-going arc, and between second transition face 35 and bottom surface 21.
For the ease of going on to say the structure of encapsulating mirror 20, do an explanation at these several symbols that indicated in earlier to Fig. 5: generally speaking LED wafer 40 can be considered point-source of light, the first intersection point c1 shown in the figure is the intersection point of the exiting surface of central optical axis C and LED wafer 40, the second intersection point c2 is the junction for first transition face 34 and first plane of refraction 31, the 3rd intersection point c3 is the junction for the third reflect face 33 and second transition face 35, and the 4th intersection point c4 then is the junction of first plane of refraction 31 and second plane of refraction 32.
Because the light that LED wafer 40 is sent is to present (please refer to Figure 1A) in Lang Baixing (Lambert ion) Energy distribution mode.And in a preferred embodiment of the present invention, consult Fig. 6, the light that LED wafer 40 is sent can divide into interval 1, interval 2 and interval 3 according to the intensity distributions of its energy after entering encapsulating mirror 20 of the present invention.Interval 1 is between the line of the central optical axis C and first intersection point c1 to the second intersection point c2.Interval 2 is between the line and interval 1 of the first intersection point c1 to the, four intersection point c4 (the 3rd intersection point C3 is also on the link position of the first intersection point c1 to the, four intersection point c4).Interval 3 between interval 2 and bottom surface 21 between.Wherein interval 1 Energy distribution is the strongest, interval 2 take second place, interval 3 is the most weak, the light in the interval 1 that Energy distribution is the strongest is by the reflection of reflecting surface 23, and light is reflexed to second plane of refraction 32, cause the strongest part of energy be arranged at encapsulating mirror 20 unitary sides to the middle body (shown in Fig. 7 A) of luminous smooth shape, interval 2 light is directly gone out by 31 refractions of first plane of refraction, interval 3 light is then directly gone out by 33 refractions of third reflect face, so first plane of refraction 31, second plane of refraction 32 and third reflect face 33 are the ejaculation paths of being responsible for the source light in the single interval of control respectively, can't interact each other.
The bearing of trend on the surface of first transition face 34 is designed especially, cause the light that enters encapsulating mirror 20 from the plane of incidence 22 to intersect with first transition face 34, preferable design as shown in Figure 5, the surperficial bearing of trend of first transition face 34 is overlapping with the line direction of first intersection point c1 to the second intersection point c2, therefore can avoid taking place unsuitable reflection or refraction.
With the embodiment of Fig. 6, the incidence point place that the first intersection point c1 and light enter the plane of incidence 22 have one small between distance, this spacing can influence the position of first transition face 34; Therefore preferable design also must be considered the refraction effect of light after passing through the plane of incidence 22 that LED wafer 40 is sent, according to preferred embodiment of the present invention, encapsulating mirror 20 can directly encapsulate (package) bright dipping side in LED wafer 40, the optical axis of LED wafer 40 is promptly overlapping with the central optical axis C of encapsulating mirror 20 at this moment, the first intersection point c1 enters the incidence point of the plane of incidence 22 near light, this moment, the bearing of trend on surface of first transition face 34 promptly can be overlapping with the line direction of first intersection point c1 to the second intersection point c2.
Edge-emitted type light-emitting diode proposed by the invention sees through encapsulating mirror 20 and the luminous smooth type of LED wafer 40 can be restrained more (shown in Fig. 7 A), to promote collection efficiency.LED module with encapsulating mirror 20 making of the present invention, can apply to module backlight and general lighting field, especially in the utilization of plurality of LEDs wafer 40, can be with the luminous smooth type flattening of single LEDs wafer 40, allow invalid distance L 2 significantly shorten (shown in Fig. 7 B), more can reduce the influence that different LED wafer 40 luminous efficiency differences are caused.
Though the present invention is disclosed as above by preferred embodiment, so it is not in order to limiting the present invention, anyly has the knack of this skill person, and variation of being done and retouching without departing from the spirit and scope of the present invention must be considered as protection category of the present invention.
[main element symbol description]
(known techniques)
10........ the plane of incidence
11........ reflecting surface
12........ first refractive face
13........ second plane of refraction
14........LED the central optical axis direction of wafer
15........ bottom surface
16........ anti-dazzling screen
LED....... light emitting diode
L1........ invalid distance
P1, the path of P2...... light
(the present invention)
20........ encapsulating mirror
22........ the plane of incidence (incident surface)
23........ reflecting surface (reflective surface)
31........ first plane of refraction (first refractive surface)
32........ second plane of refraction (second refractive surface)
33........ third reflect face (third refractive surface)
34........ first transition face
35........ second transition face
P1........ first light path
P2........ second light path
P3........ the 3rd light path
C........ the central optical axis of encapsulating mirror 20 (central optical axis)
C1........ first intersection point
C2........ second intersection point
C3........ the 3rd intersection point
C4........ the 4th intersection point
L2........ invalid distance
Claims (12)
1. an encapsulating mirror is to be applied to a light source, it is characterized in that: include:
The bottom surface;
The plane of incidence is connected in this bottom surface, and its below is provided with this light source;
Reflecting surface forms an angle with the central optical axis of encapsulating mirror;
First plane of refraction;
First transition face is between this reflecting surface and this first plane of refraction;
Second plane of refraction is connected with this first plane of refraction;
The third reflect face is connected with this bottom surface; And
Second transition face is between this second plane of refraction and this third reflect face;
Wherein, this light source is arranged on the position of encapsulating mirror central optical axis, the light that this light source provides enters the inside of this encapsulating mirror from this plane of incidence, the light of a part is reflected onto this second plane of refraction at this reflecting surface, and light produces refraction and penetrates this encapsulating mirror along first light path after by this second plane of refraction;
All the other enter the light of this encapsulating mirror inside from this plane of incidence, be directly to penetrate this encapsulating mirror along one second light path respectively, and directly penetrate this encapsulating mirror along one the 3rd light path by being refracted after this third reflect face by being refracted after this first plane of refraction.
2. encapsulating mirror as claimed in claim 1, it is characterized in that: this reflecting surface is a side that is in close proximity to the central optical axis of this encapsulating mirror, the part light that enters encapsulating mirror is reflected and by being positioned at the middle body of the luminous smooth shape of this encapsulating mirror side direction behind this second plane of refraction.
3. encapsulating mirror as claimed in claim 1 is characterized in that: this plane of incidence light of entering this encapsulating mirror can't intersect with this first transition face certainly.
4. encapsulating mirror as claimed in claim 3 is characterized in that: the bearing of trend on the surface of this first transition face is overlapping to the line direction of the junction of this first transition face and this first plane of refraction with the intersection point of the exiting surface of light source and central optical axis.
5. encapsulating mirror as claimed in claim 1 is characterized in that: the exiting surface that the junction of this second transition face and this third reflect face just is positioned at light source and the intersection point of central optical axis are to the link position of the junction of this first plane of refraction and this second plane of refraction.
6. encapsulating mirror as claimed in claim 1 is characterized in that: this third reflect mask has smooth-going arc and between this second transition face and this bottom surface.
7. edge-emitted type light-emitting diode is characterized in that: include:
The LED wafer;
Encapsulating mirror is positioned at the bright dipping side of this LED wafer, includes:
The bottom surface;
The plane of incidence, its below is provided with this LED wafer;
Reflecting surface forms an angle with the central optical axis of encapsulating mirror;
First plane of refraction;
First transition face is between this reflecting surface and this first plane of refraction;
Second plane of refraction is connected with this first plane of refraction;
The third reflect face is connected with this bottom surface; And
Second transition face is between this second plane of refraction and this third reflect face;
Wherein, this LED wafer is arranged on the position of encapsulating mirror central optical axis, the light that this LED wafer sends enters the inside of this encapsulating mirror from this plane of incidence, the light of a part is reflected onto this second plane of refraction at this reflecting surface, and light produces refraction and penetrates this encapsulating mirror along first light path after by this second plane of refraction;
All the other enter the light of this encapsulating mirror inside from this plane of incidence, be directly to penetrate this encapsulating mirror along one second light path respectively, and directly penetrate this encapsulating mirror along one the 3rd light path by being refracted after this third reflect face by being refracted after this first plane of refraction.
8. edge-emitted type light-emitting diode as claimed in claim 7, it is characterized in that: this reflecting surface is a side that is in close proximity to the central optical axis of this encapsulating mirror, the part light that enters encapsulating mirror is reflected and by being positioned at the middle body of the luminous smooth shape of this encapsulating mirror side direction behind this second plane of refraction.
9. edge-emitted type light-emitting diode as claimed in claim 7 is characterized in that: this plane of incidence light of entering this encapsulating mirror can't intersect with this first transition face certainly.
10. edge-emitted type light-emitting diode as claimed in claim 9 is characterized in that: the bearing of trend on the surface of this first transition face is overlapping to the line direction of the junction of this first transition face and this first plane of refraction with the intersection point of the exiting surface of this LED wafer and central optical axis.
11. edge-emitted type light-emitting diode as claimed in claim 7 is characterized in that: the exiting surface that the junction of this second transition face and this third reflect face just is positioned at the LED wafer and the intersection point of central optical axis are to the link position of the junction of this first plane of refraction and this second plane of refraction.
12. edge-emitted type light-emitting diode as claimed in claim 7 is characterized in that: this third reflect mask has smooth-going arc and between this second transition face and this bottom surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100992099A CN100399593C (en) | 2005-09-09 | 2005-09-09 | Edge-emitted light-emitting diode and its packaging mirror |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100992099A CN100399593C (en) | 2005-09-09 | 2005-09-09 | Edge-emitted light-emitting diode and its packaging mirror |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1929157A CN1929157A (en) | 2007-03-14 |
| CN100399593C true CN100399593C (en) | 2008-07-02 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005100992099A Expired - Fee Related CN100399593C (en) | 2005-09-09 | 2005-09-09 | Edge-emitted light-emitting diode and its packaging mirror |
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| Country | Link |
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| CN (1) | CN100399593C (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4546579B1 (en) * | 2009-02-12 | 2010-09-15 | パナソニック株式会社 | Lighting lens, light emitting device, surface light source, and liquid crystal display device |
| TWM461760U (en) * | 2013-04-29 | 2013-09-11 | 勝華科技股份有限公司 | Optical lens and light source device |
| CN105465744A (en) * | 2014-06-16 | 2016-04-06 | 法雷奥照明湖北技术中心有限公司 | Light patterning device and lighting and/or signal indicating equipment |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2462230Y (en) * | 2000-12-28 | 2001-11-28 | 张文虎 | Multipurpose LED circular transmitting signal lamp |
| CN1441308A (en) * | 2002-02-18 | 2003-09-10 | 佳能株式会社 | Lighting device |
| US6674096B2 (en) * | 2001-06-08 | 2004-01-06 | Gelcore Llc | Light-emitting diode (LED) package and packaging method for shaping the external light intensity distribution |
| US6811277B2 (en) * | 2002-07-10 | 2004-11-02 | Koito Manufacturing Co., Ltd. | Vehicle lamp |
| CN1586017A (en) * | 2001-11-16 | 2005-02-23 | 丰田合成株式会社 | Light-emitting diode, led light, and light apparatus |
-
2005
- 2005-09-09 CN CNB2005100992099A patent/CN100399593C/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2462230Y (en) * | 2000-12-28 | 2001-11-28 | 张文虎 | Multipurpose LED circular transmitting signal lamp |
| US6674096B2 (en) * | 2001-06-08 | 2004-01-06 | Gelcore Llc | Light-emitting diode (LED) package and packaging method for shaping the external light intensity distribution |
| CN1586017A (en) * | 2001-11-16 | 2005-02-23 | 丰田合成株式会社 | Light-emitting diode, led light, and light apparatus |
| CN1441308A (en) * | 2002-02-18 | 2003-09-10 | 佳能株式会社 | Lighting device |
| US6811277B2 (en) * | 2002-07-10 | 2004-11-02 | Koito Manufacturing Co., Ltd. | Vehicle lamp |
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| Publication number | Publication date |
|---|---|
| CN1929157A (en) | 2007-03-14 |
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