CN100395373C - Growth appts. of Chemical gaseous phase deposition - Google Patents
Growth appts. of Chemical gaseous phase deposition Download PDFInfo
- Publication number
- CN100395373C CN100395373C CNB2006100392361A CN200610039236A CN100395373C CN 100395373 C CN100395373 C CN 100395373C CN B2006100392361 A CNB2006100392361 A CN B2006100392361A CN 200610039236 A CN200610039236 A CN 200610039236A CN 100395373 C CN100395373 C CN 100395373C
- Authority
- CN
- China
- Prior art keywords
- casing
- reaction chamber
- tube
- graphite reaction
- sleeve pipe
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000008021 deposition Effects 0.000 title 1
- 239000007792 gaseous phase Substances 0.000 title 1
- 239000000126 substance Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 35
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 20
- 238000006243 chemical reaction Methods 0.000 claims abstract description 20
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 20
- 239000010439 graphite Substances 0.000 claims abstract description 20
- 238000010438 heat treatment Methods 0.000 claims abstract description 17
- 230000006698 induction Effects 0.000 claims abstract description 11
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 15
- 238000000197 pyrolysis Methods 0.000 claims description 12
- 239000000463 material Substances 0.000 abstract description 27
- 230000000694 effects Effects 0.000 abstract description 6
- 230000005855 radiation Effects 0.000 abstract description 5
- 239000010453 quartz Substances 0.000 abstract 5
- 230000002349 favourable effect Effects 0.000 abstract 1
- 238000004321 preservation Methods 0.000 abstract 1
- 238000001149 thermolysis Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 description 11
- 238000002360 preparation method Methods 0.000 description 7
- 238000000407 epitaxy Methods 0.000 description 5
- 239000012535 impurity Substances 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 2
- 239000012774 insulation material Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005049 combustion synthesis Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
Images
Abstract
The present invention discloses a chemical vapor deposition growth device which adopts a radio-frequency induction heater for heating, a graphite reaction chamber is arranged in the center of the radio-frequency induction heater, the graphite reaction chamber is arranged in a vacuum quartz pipe (1), and a thermolysis BN casing tube (2) group with the advantage of high temperature resistance is arranged between the quartz tube and the graphite reaction chamber (3) heated through induction. The BN casing tube group comprises 2 to 6 casing tubes, and the space of casing tube walls and the space between the casing tube walls and the quartz tube wall are from 1mm to 10mm. The BN casing tube group with a plurality of layers is used as a radiation shield which effectively reduces energy loss caused by heat radiation. Because the thermal conductivity of the BN material is low, a temperature gradient which is more than 100 DEG C/mm can be realized, and the BN material has good heat preservation effect. High vacuum is maintained in the quartz tube, and vacuums are arranged among BN casing tubes and between the BN casing tubes and the quartz tubes, which is favorable to heat loss reduction.
Description
Technical field
Design, especially the pyrolysis BN sleeve pipe group of growth apparatus that the present invention relates to prepare the CVD material is as the growth apparatus of the preparation CVD material of attemperator.
Background technology
Third generation semi-conductor, wide bandgap material have excellent photoelectric properties, have widely at communication, message area and use.Chemical vapor deposition (CVD) method is one of method commonly used of epitaxy wide-band gap semiconductor thin film material.
The epitaxy of thin-film material such as SiC, GaN all at high temperature realizes, the growth temperature of SiC is 1300 ~ 1600 ℃, the growth temperature of GaN is 1000 ~ 1200 ℃, the heating unit of the CVD material growing device that is adopted should have the excellent insulating performance, so just can satisfy the requirement of material preparation, also can realize the energy conservation object of less energy-consumption.
At present, the type of heating of epitaxial device that is used for the CVD material of SiC thin-film material preparation adopts the radio-frequency induction heating mostly.Because growth temperature is up to 1300 ~ 1600 ℃, for avoiding silica tube softening, between the graphite reaction chamber of silica tube and sensed heating, need resistant to elevated temperatures high purity lagging material, for obtaining high-quality epitaxial material, also needing to guarantee in the high growth temperature process, not have the impurity self-thermal insulation material in reaction chamber, to overflow.
Traditional horizontal CVD equipment is to adopt graphite felt to realize the high-temperature-resistant thermal-insulation function.The defective of this method is:
1, graphite felt is a vesicular.
Easily adsorb impurity, and be difficult for cleaning, also be difficult for the adjustment and the combination of assembling as required.Can not guarantee that inclusion-free is overflowed in the high growth temperature process after certain usage period.
2, graphite felt can not self-supporting.
Be difficult in vertical CVD equipment, using, and the CVD equipment claimed of not having this configuration has the quartzy cavity of large-size, and on quartzy tube wall additional water-cooled or air cooling jacket pipe, to guarantee that tube wall is in lower temperature in the epitaxial process.Such equipment cost height, power consumption are big.
Summary of the invention
Design, especially the pyrolysis BN sleeve pipe group of growth apparatus that the present invention seeks to propose a kind of CVD of preparation material is as the growth apparatus of the preparation CVD material of attemperator.
The present invention seeks to realize like this: the epitaxial device of CVD material, the heating of employing radio-frequency induction, be provided with the graphite reaction chamber in the middle of the radio-frequency induction heater, the graphite reaction chamber places in the vitreosil pipe, it is characterized in that being provided with between the graphite reaction chamber of silica tube and sensed heating resistant to elevated temperatures pyrolysis BN sleeve pipe group.
Described pyrolysis BN sleeve pipe group comprises two sleeve pipes at least, and as 2-6 sleeve pipe forming sleeves group, casing wall spacing, casing wall and quartzy tube wall spacing 〉=1mm are less than 10mm.The thickness of casing wall is 0.2-8mm.
The present invention is in particular for adopting pyrolysis BN sleeve pipe group as attemperator in horizontal CVD material growing device.
Mechanism of the present invention is: pyrolysis BN material has high-melting-point, high heat insulating ability, high purity, high-compactness, long lifetime, is difficult for distinguishing features such as absorption impurity, easy cleaning.By material property preferred plan is to select the pyrolysis BN sleeve pipe of wall thickness greater than 5mm for use, so that pipe surface temperature is reduced to below 600 ℃ of conventional requirement, but the cost of this scheme is high and present level of processing still is difficult to realize.
The present invention program's characteristics are:
1, utilize multilayer BN sleeve pipe group to cover cover, reduce power loss due to the thermal radiation effectively as radiation.
2, BN material thermal conductivity is low, can realize the thermograde that 100 ℃/mm is above, has good heat insulation effect.
3, keep high vacuum in the silica tube, therefore low between the BN sleeve pipe, be vacuum between BN sleeve pipe and the silica tube along silica tube radial thermal conductivity, help to reduce calorific loss.
4, guarantee in the high growth temperature process, not have the impurity self-thermal insulation material in reaction chamber, to overflow, obtain high-quality epitaxial material.
Description of drawings
Fig. 1 is a cross section structure synoptic diagram of the present invention, indicates among the figure: silica tube 1 (outmost turns), three layers of BN sleeve pipe 2, graphite reaction chamber 3, epitaxial substrates growth platform 4 (center rectangle).Wherein the direction of arrow is represented the thermal radiation direction, and arrow density is represented caloradiance
Embodiment
As shown in the figure, heating and attemperator comprise following structure:
Heating unit adopts the radio-frequency induction heating, is provided with the graphite reaction chamber in the middle of the radio-frequency induction heater, and the graphite reaction chamber places in the vitreosil pipe.Between the graphite reaction chamber of silica tube and sensed heating, be provided with resistant to elevated temperatures pyrolysis BN sleeve pipe group.
The radio-frequency induction process furnace: power 30 ~ 40KW, about frequency 40KHZ.
Graphite reaction chamber (heating member): hollow, size are pressed the design of epitaxial substrate diameter.
Attemperator, BN sleeve pipe group: the sleeve pipe number is selected three layers greater than 2 in the present embodiment, and thicker pipe is selected two layers also effect preferably.When requiring high insulating effect, can select the pipe of four layers or more multi-layered number.
Casing length is 2-3 a times of heating member length, cover tube spacing, sleeve pipe and silica tube spacing 〉=1mm, between sleeve pipe, sleeve pipe and silica tube isolate, support with the BN ring, in above-mentioned reaction chamber, outer tube places silica tube to the mid-heating member of inner sleeve (graphite reaction chamber 3, epitaxial substrate growth platform 4).
The BN casing wall thickness that the present invention program adopts select for use present level of processing the BN thickness that can realize, present pyrolysis BN telescopic working method is: the boron nitride-base ceramic (employings such as Shanghai silicate institute, Inst. of Composite material, Harbin Polytechnic Univ.) of preparation of polymeric preceramic body heat solution or the preparation of low-cost combustion synthesis process, the thickness of pyrolysis BN casing pipe sleeve tube wall is 0.2-2mm at present.Realize insulation by making up, assembling, can guarantee that inclusion-free is overflowed in the high growth temperature process, have satisfactory performance price ratio and lower manufacturing cost simultaneously.The BN telescopic better effects if that wall thickness is big.
The present invention program's advantage also comprises:
1, owing to can carry out the combination and the adjustment of assembling easily, so this covering device can at high temperature carry out the epitaxy of wide band gap semiconducter thin-film materials such as SiC, GaN, also can realize Si sill (Si at a lower temperature
1-xGe
x, Si
1-x-yGe
xC
yDeng) epitaxy.
2, effective heat insulation effect of BN sleeve pipe group attemperator can make the power consumption of CVD material growing device obviously reduce;
3, pyrolysis BN can realize self-supporting, both can be used for horizontal CVD material growing device, also can be used for vertical CVD material growing device, thereby can effectively reduce manufacturing cost, technical difficulty and the use power consumption of vertical CVD material growing device.
The technical indicator that the present invention program has realized in horizontal CVD material growing device:
The high growth temperature temperature range: 800 ~ 1400 ℃, during growth silica tube outside wall temperature＜600 ℃ (air-cooled); The low-temperature epitaxy temperature range: 550 ~ 850 ℃, during growth silica tube outside wall temperature＜200 ℃ (air-cooled).
Claims (1)
1. the growth apparatus of chemical vapor deposition, the heating of employing radio-frequency induction, be provided with the graphite reaction chamber in the middle of the radio-frequency induction heater, the graphite reaction chamber places in the vitreosil pipe (1), it is characterized in that being provided with between the graphite reaction chamber (3) of silica tube and sensed heating resistant to elevated temperatures pyrolysis BN sleeve pipe (2) group; Described BN sleeve pipe group is a 2-6 sleeve pipe, and casing wall spacing, casing wall and quartzy tube wall spacing are 1mm-10mm; The thickness of casing wall is 0.2-8mm; Casing length be heating member graphite reaction chamber (3) length 2-3 doubly, between casing wall, sleeve pipe and silica tube with the BN ring isolate, support.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100392361A CN100395373C (en) | 2006-03-31 | 2006-03-31 | Growth appts. of Chemical gaseous phase deposition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100392361A CN100395373C (en) | 2006-03-31 | 2006-03-31 | Growth appts. of Chemical gaseous phase deposition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1834286A CN1834286A (en) | 2006-09-20 |
| CN100395373C true CN100395373C (en) | 2008-06-18 |
Family
ID=37002181
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2006100392361A Expired - Fee Related CN100395373C (en) | 2006-03-31 | 2006-03-31 | Growth appts. of Chemical gaseous phase deposition |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100395373C (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102465333B (en) * | 2010-11-18 | 2015-04-15 | 南京大学 | Vertical hydride vapor phase epitaxy growth system |
| CN103184514B (en) * | 2013-04-11 | 2016-07-06 | 中国科学院苏州纳米技术与纳米仿生研究所 | crystal growing furnace |
| CN103924208B (en) * | 2014-04-17 | 2016-08-24 | 史永贵 | A kind of method preparing multi-layer graphene thin film |
| CN107740183A (en) * | 2017-10-12 | 2018-02-27 | 北京大学 | A kind of high temperature clean chamber system and method suitable for AlN crystal growths |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1052874A (en) * | 1988-10-06 | 1991-07-10 | 罗纳·布朗克化学公司 | Boron-nitrogen polymer, its method for making and as the usage of boron nitride parent |
| CN2429528Y (en) * | 2000-06-16 | 2001-05-09 | 烽火通信科技股份有限公司 | Preheating furnace for producing preformed products for optical fibers |
| WO2001061070A1 (en) * | 2000-02-18 | 2001-08-23 | G.T. Equipment Technologies Inc. | Method and apparatus for chemical vapor deposition of polysilicon |
-
2006
- 2006-03-31 CN CNB2006100392361A patent/CN100395373C/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1052874A (en) * | 1988-10-06 | 1991-07-10 | 罗纳·布朗克化学公司 | Boron-nitrogen polymer, its method for making and as the usage of boron nitride parent |
| WO2001061070A1 (en) * | 2000-02-18 | 2001-08-23 | G.T. Equipment Technologies Inc. | Method and apparatus for chemical vapor deposition of polysilicon |
| CN2429528Y (en) * | 2000-06-16 | 2001-05-09 | 烽火通信科技股份有限公司 | Preheating furnace for producing preformed products for optical fibers |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1834286A (en) | 2006-09-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101115697B1 (en) | Cvd reactor with energy efficient thermal-radiation shield | |
| JP5153992B2 (en) | Process for producing a product comprising trichlorosilane | |
| CN103628140B (en) | A kind of superhigh temperature Double water-cooled quartz tube vacuum chamber double sealing structure | |
| CN100395373C (en) | Growth appts. of Chemical gaseous phase deposition | |
| TW200628641A (en) | Apparatus and method for manufacturing semiconductor single crystal | |
| CN103184514B (en) | crystal growing furnace | |
| CN102703966A (en) | Device for growing carbonization silicon single crystal by using seed crystal temperature gradient method | |
| CN106048729A (en) | Device for growing large-diameter silicon carbide crystal by PVT method | |
| CN110331439A (en) | A kind of heating device for silicon carbide epitaxy | |
| KR20200044729A (en) | Large size high purity silicon carbide single crystal, substrate and its manufacturing method and manufacturing device | |
| CN103322800A (en) | Fully transparent tube type resistance furnace | |
| CN104233460B (en) | Reaction chamber and MOCVD equipment provided with reaction chamber | |
| CN101130859B (en) | Resistor external-heating type thermal gradient vapor phase carbon depositing device for airplane carbon brake disc densification technique | |
| CN106517163B (en) | A kind of cold hearth and continuous producing method preparing graphene for CVD method | |
| TWI726505B (en) | Draft tube of crystal growing furnace and the crystal growing furnace | |
| CN102154683A (en) | Monocrystal/polycrystal directional solidification system of metal heating body structure | |
| CN101144179B (en) | Device for single-crystal growth by physical gas phase transmission precipitation method | |
| US20100175614A1 (en) | Thermally insulated configuration and method for producing a bulk sic crystal | |
| CN110512281A (en) | The method for quickly preparing silicon carbide | |
| CN112458532A (en) | Device and method for preparing silicon carbide single crystal through high-temperature chemical deposition | |
| JP2008262959A (en) | Radiant heat insulating body and heat treatment apparatus | |
| CN220503268U (en) | Device for preparing silicon carbide single crystal by high-temperature chemical deposition | |
| CN209260256U (en) | High temperature CVD equipment | |
| CN104538289A (en) | Multi-chip silicon carbide semiconductor material manufacturing device | |
| CN110499532A (en) | Quickly prepare the device of silicon carbide |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20080618 Termination date: 20130331 |