CN100388342C - Active type display device driving method - Google Patents
Active type display device driving method Download PDFInfo
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- CN100388342C CN100388342C CNB2005100749675A CN200510074967A CN100388342C CN 100388342 C CN100388342 C CN 100388342C CN B2005100749675 A CNB2005100749675 A CN B2005100749675A CN 200510074967 A CN200510074967 A CN 200510074967A CN 100388342 C CN100388342 C CN 100388342C
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Abstract
The present invention relates to a driving method of an active type display device, which comprises the following steps: a thin film transistor is started in a display period, and the electrical properties of the thin film transistor are reset. The steps for starting the thin film transistor comprises: grid drive voltage is arranged on a gate of the thin film transistor; source displaying voltage is arranged on a source of the thin film transistor; drain displaying voltage is arranged on a drain of the thin film transistor. The steps for resetting the electrical properties of the thin film transistor comprises: gate resetting voltage is arranged on the gate of the thin film transistor; source resetting voltage is arranged on the source of the thin film transistor; drain resetting voltage is arranged on the drain of the thin film transistor. The gate resetting voltage is less than or equal to the source resetting voltage or the drain resetting voltage, and the source resetting voltage or the drain resetting voltage can be adjusted.
Description
Technical field
The present invention is about a kind of driving method of active display, particularly about a kind of driving method with the electrical replacement process of thin film transistor (TFT).
Background technology
Organic Light Emitting Diode is a kind of element of current drives, and its luminosity is along with the electric current by Organic Light Emitting Diode changes.Comprise polycrystalline SiTFT (LTPS-TFT) and amorphous silicon film transistor (a-Si TFT) in order to the active member that drives Organic Light Emitting Diode.Wherein polycrystalline SiTFT is the normal user of industry now; And the amorphous silicon membrane transistor is few with the required light shield quantity of its processing procedure, and the low and cost of film-forming temperature is cheap and become following trend.Yet, no matter be polycrystalline SiTFT or amorphous silicon film transistor, working long hours down, all there is critical voltage value to rise or floating and problem that cause the conducting electric current to descend is especially even more serious with amorphous silicon film transistor.
Use amorphous silicon film transistor as the organic electroluminescence panel (amorphous-TFTbased OLED panel) of driving element in the process of current lead-through, the passage of amorphous silicon film transistor has high-current flow through wherein, cause electronics to become trapped among its gate dielectric (gatedielectric) easily, cause the critical voltage (Vth) of amorphous silicon film transistor to rise, electric current descends, and makes the brightness of the Organic Light Emitting Diode that panel is interior descend.This is for using the bottleneck of amorphous silicon film transistor as the organic electroluminescence panel life-span of driving element.
The method of improving the problems referred to above at present is, in driving sequential, add an electric field, direction of an electric field points to grid (gate) by source electrode (source)/drain electrode (drain) of TFT, is beneficial to electronics and is discharged by gate dielectric, to reply original critical voltage (Vth).Its embodiment generally has two kinds:
One, please refer to Figure 1A, source terminal or drain electrode end at each pixel circuit apply positive reset voltage Vs ' or Vd ', in order to cause in thin film transistor (TFT), are pointed to the electric field of grid by source/drain, make and catch the electronics that is trapped in gate dielectric, be discharged from and get back among the transistor channels.
Two, please refer to Figure 1B, gate terminal at each pixel circuit applies negative reset voltage Vg ', in order to cause in thin film transistor (TFT), is pointed to the electric field of grid by source/drain, what make catches the electronics that is trapped in gate dielectric, is discharged from and gets back among the transistor channels.
Please refer to Fig. 1 C, be to implement method shown in Figure 1A and Figure 1B, become trapped in the electronics 13 case of motion synoptic diagram in the gate dielectric 11 of thin film transistor (TFT) 10.After the electric field that source/drain points to grid formed, electronics 13 was promptly got back among the channel layer 14 against the direction of an electric field motion, made the free electron number among the channel layer 14 reply normal condition and avoid critical voltage to rise.
Among the prior art, if gate drive voltage Vg remains unchanged, the display voltage that will drain Vd, source electrode display voltage Vs draw high to drain electrode reset voltage Vd ', Vs ', and the positive voltage that provides the source/drain two ends bigger then is provided.If drain voltage Vd, source electrode reset voltage Vs remain unchanged, only reduce gate drive voltage Vg to grid reset voltage Vg ', the negative voltage that provides gate terminal bigger then is provided.That a kind of method no matter, gate dielectric is carried out charge discharge all need provide quite high voltage, so power-efficient will be relatively poor.
Summary of the invention
Fundamental purpose of the present invention is the driving method that is to provide a kind of active display, reduces the reset voltage position standard that is provided in source/drain or grid, and is electrical with the thin film transistor (TFT) that the method for comparatively power saving is adjusted in the electric exciting light emitting display panel.
Driving method of the present invention, be in order to adjust a thin film transistor (TFT) electrically, this method comprises and starts this thin film transistor (TFT) in a display cycle, and this thin film transistor (TFT) of resetting electrically.The step of above-mentioned startup thin film transistor (TFT) comprises provides the grid of a gate drive voltage in thin film transistor (TFT); The source electrode of one source pole display voltage in thin film transistor (TFT) is provided; And provide a drain electrode display voltage in the drain electrode of thin film transistor (TFT).The electrical step of above-mentioned replacement thin film transistor (TFT) comprises provides a grid reset voltage to give the grid of thin film transistor (TFT); Provide the one source pole reset voltage to give the source electrode of thin film transistor (TFT); And provide a drain electrode reset voltage to give the drain electrode of thin film transistor (TFT).The grid reset voltage is less than or equal to source electrode reset voltage or drain electrode reset voltage, and source electrode reset voltage or drain electrode reset voltage are adjustable.
Electrically resetting is a hardware operational motion, controls its sequential by driving wafer.Be to reduce the voltage that circuit design provided, to reach province electrical equivalent fruit, this invention advocates all to apply voltage for grid, drain electrode and source electrode, and the voltage that applies of source electrode and drain electrode is positive direction, and grid is the direction of bearing.Via above-mentioned mode, can create very high relative voltage at circuit, be enough to gate dielectric is carried out charge discharge, but do not need to create very high absolute voltage, so can improve the power-efficient of panel.
In practical experience, the grid reset voltage needs 30V approximately with respect to effective pressure reduction of source electrode reset voltage or drain electrode reset voltage.Do not change gate terminal and source terminal voltage in the prior art simultaneously, or change the purpose that gate terminal and drain terminal voltage reach electrical replacement, and among the present invention, for example, can utilize gate terminal voltage change-15V, source terminal voltage change+15V, only need provide thus+/-voltage about 15V, can reach the effect of electrical replacement.Its benefit is not need externally to create a noble potential in the power supply, and the relative voltage that but can reach 30V is to carry out electrical replacement.
Description of drawings
Figure 1A is existing transistor image element structure;
Figure 1B is existing transistor image element structure;
Fig. 1 C is for implementing method shown in Figure 1A and Figure 1B, the electron motion situation synoptic diagram in the gate dielectric of thin film transistor (TFT);
Fig. 2 A is the picture element element circuit figure of the active electro-exciting light-emitting display of the present invention;
Fig. 2 B is the picture element matrix of the active electro-exciting light-emitting display of the present invention;
Fig. 3 is second preferred embodiment of the present invention;
Fig. 4 is the 3rd preferred embodiment of the present invention.
Symbol description
10 thin film transistor (TFT) D drain electrode
11 gate dielectric S source electrodes
14 channel layer G grids
Ta switching transistor V
DDThe display voltage source
Tb driving transistors Vreset reset voltage source
Tr thin film transistor (TFT) Vss auxiliary voltage source
C electric capacity Scan sweep trace
E luminescence unit Data data line
The P picture element
Embodiment
Now cooperate diagram that the present invention's " active display driving method " is described in detail in detail, and enumerate preferred embodiment and be described as follows:
Please refer to Fig. 2 A, be the picture element element circuit figure of active electro-exciting light-emitting display.This picture element unit has one scan line Scan, a data line Data, a switching transistor Ta, a driving transistors Tb, a luminescence unit E and a capacitor C.The source electrode of switching transistor Ta and grid are connected to data line Data and sweep trace Scan respectively.The drain D of driving transistors Tb and source S are electrically connected to a luminescence unit E and an auxiliary voltage source respectively, and grid G then is electrically connected to drain electrode, capacitor C and the reset voltage source Vreset of switching transistor Ta.The electrode of luminescence unit E is connected to the drain D of driving transistors Tb, and another electrode is connected to a display voltage source.
The active display of one of circuit shown in corresponding diagram 2A driving method, with the thin film transistor (TFT) of resetting electrically, this method comprises at least: provide a grid voltage to give the grid of this driving transistors Tb; Provide one source pole voltage to give the source electrode of this driving transistors Tb; And the drain electrode that provides a drain voltage to give this driving transistors Tb, wherein this grid voltage is less than or equal to this source voltage or this drain voltage, and this source voltage or this drain voltage are adjustable.
Please also refer to Fig. 2 B, this active display has M bar sweep trace Scan, N bar data line Data and the capable pixel array of M row N.This pixel array has M * N picture element in order to show that a picture frame picture (frame) is in a display cycle.With picture element P (1,1) is example, and the source electrode of switching transistor Ta (1,1) and grid are connected to data line Data (1) and sweep trace Scan (1) respectively, and its drain electrode is connected to the grid of capacitor C (1,1) and driving transistors Tb (1,1).The drain D of driving transistors Tb (1,1) then is connected to the negative electrode of luminescence unit E, and the anode that sees through luminescence unit E again is connected to display voltage source V
DDTo obtain a drain electrode display voltage Vd.The source S of driving transistors Tb (1,1) is connected to auxiliary voltage source Vss to obtain one source pole display voltage Vs.The grid G of driving transistors Tb (1,1) connects a plug-in reset voltage source Vreset in addition, to obtain a reset voltage driving transistors Tb (1,1) is electrically reset.When obtaining this reset voltage or afterwards, promptly by display voltage source V
DDOne drain electrode reset voltage Vd ' is provided, or provides one source pole reset voltage Vs ' by auxiliary voltage source Vss.In a preferred implementation, when obtaining this reset voltage or afterwards, promptly by display voltage source V
DDAnd auxiliary voltage source Vss provides drain electrode reset voltage Vd ' and source electrode reset voltage Vs '.
The better embodiment of above-mentioned driving method is selected as follows: one, above-mentioned step and the above-mentioned step that provides this source voltage to give the source S of driving transistors Tb that the grid G that this grid voltage gives driving transistors Tb is provided be provided simultaneously.Two, carry out the above-mentioned step that the grid G that this grid voltage gives driving transistors Tb is provided the and above-mentioned step of the drain D that this drain voltage gives driving transistors Tb is provided is to carry out simultaneously simultaneously.Three, carry out simultaneously and above-mentionedly provide step and the above-mentioned step that provides drain electrode reset voltage Vd ' to give driving transistors Tb drain D that grid reset voltage Vg ' gives thin film transistor (TFT) Tb grid, and the above-mentioned step and the above-mentioned step that provides source electrode reset voltage Vs ' to give driving transistors Tb source S of the grid G that grid reset voltage Vg ' gives driving transistors Tb of providing also carried out simultaneously.
In order to reach preferable implementation result, the above-mentioned every voltage range of standard is as follows: this grid voltage is less than or equal to 0V approximately, and preferred range is for being less than or equal to-10V.This source voltage is approximately more than or equal to 10V, and its preferred range is more than or equal to 15V.This drain voltage is approximately more than or equal to 10V, and its preferred range is more than or equal to 15V.Further be restricted to: the pressure reduction of this grid voltage and this source voltage is approximately greater than 10V and less than 100V, and preferred range is greater than 30V and less than 100V.The pressure reduction of this grid voltage and this drain voltage is approximately greater than 10V and less than 100V, and its preferred range is greater than 30V and less than 100V.
Above-mentioned driving method is applicable to N type amorphous silicon film transistor.The negative electrode of the light-emitting element E in the circuit is connected to the drain electrode end of driving transistors Tb, and this connected mode is generally anti-phase type (inverted) Organic Light Emitting Diode and adopts.
In the show state, the gate drive voltage Vg of driving transistors Tb is imported by data line data sees through switching transistor Ta.When electrically resetting, grid voltage becomes the past grid reset voltage Vg ' that descends by the gate drive voltage Vg of show state, and source voltage and drain voltage become source electrode display voltage Vs and past source electrode reset voltage Vs ' that rises of drain electrode display voltage Vd and drain electrode reset voltage Vd ' by show state, and heave amplitude does not limit.And descend at gate drive voltage Vg, after source electrode display voltage Vs and drain electrode display voltage Vd rising, the grid reset voltage Vg ' of driving transistors Tb can bear compared to source electrode reset voltage Vs ' and drain electrode reset voltage Vd '.Because in general the cut-in voltage of N transistor npn npn is positive voltage, so grid reset voltage Vg ' usually can be less than the cut-in voltage of driving transistors Tb.On the practice, this grid reset voltage Vg ' to the pressure reduction of this source electrode reset voltage Vs ' or to the pressure reduction regular meeting of this drain electrode reset voltage Vd ' more than or equal to 10V.
For instance, the driving transistors Tb gate drive voltage Vg in the show state can be influenced by voltage, drain electrode display voltage Vd and the source electrode display voltage Vs of data line input.But drain electrode display voltage Vd is generally+burning voltage of 12V, and source electrode display voltage Vs then is generally the burning voltage of 0V.When the action of resetting took place, grid voltage can be gate drive voltage Vg toward decline 15V, and drain voltage rises to 30V, and source voltage rises to 30V.What must emphasize is that in the action of resetting took place, driving transistors Tb source/drain did not have current flowing.
The present invention can apply to the electrical replacement of the N channel thin film transistors of various types.The N channel thin film transistors is divided into vague and general type and enhancement mode.The amorphous silicon layer of vague and general type N channel thin film transistors is generally the n type and mixes, and the amorphous silicon layer of enhancement mode N channel thin film transistors can be the doping of p type or mix (undoped).In the present processing procedure, the amorphous silicon layer on the glass substrate all is do not mix (un-doped Si layer) except source/drain.
In the driving sequential of an electric exciting light emitting display panel, when using driving method of the present invention to adjust driving transistors Tb electrical, its step comprises and starts driving transistors Tb in a display cycle, and replacement driving transistors Tb electrically.The step of above-mentioned startup driving transistors Tb comprises provides gate drive voltage Vg grid in driving transistors Tb; Provide source electrode display voltage Vs in the source electrode of driving transistors Tb; And provide drain electrode display voltage Vd in the drain electrode of driving transistors Tb.The electrical step of above-mentioned replacement driving transistors Tb comprises provides grid reset voltage Vg ' to give the grid of driving transistors Tb; Provide source electrode reset voltage Vs ' to give the source electrode of driving transistors Tb; And provide drain electrode reset voltage Vd ' to give the drain electrode of driving transistors Tb.Grid reset voltage Vg ' is less than or equal to source electrode reset voltage Vs ' or drain electrode reset voltage Vd ', and source electrode reset voltage Vs ' or drain electrode reset voltage Vd ' are adjustable.
Various voltage range standards are exemplified below: this gate drive voltage is about 0V to 10V.This drain electrode display voltage is about 10V to 20V.This source electrode display voltage is about 0V.Further be restricted to: the pressure reduction of this grid reset voltage and this source electrode reset voltage is approximately greater than 10V and less than 100V, and preferable pressure differential range is about greater than 30V and less than 100V.The pressure reduction of this grid reset voltage and the reset voltage that should drain is approximately greater than 10V and less than 100V, and preferable pressure differential range is about greater than 30V and less than 100V.This grid reset voltage is less than or equal to 0V approximately, and preferable scope is for being less than or equal to-10V.During N transistor npn npn electrical, this grid reset voltage is less than or equal to this gate drive voltage if be used to reset, and this source electrode reset voltage is more than or equal to this source electrode display voltage, and this drain electrode reset voltage is more than or equal to this display voltage that drains.
In the foregoing description, transistor T a and Tb are the N channel transistor, and catching the electric charge carrier that sinks in the gate insulator is electronics, and when electrically resetting, the electric field that provides is that source/drain points to grid.Otherwise if use the P channel transistor, catching the electric charge carrier that sinks in the gate insulator is electric hole, when electrically resetting, the electric field that provides is that grid points to source/drain, at this moment, should provide positive grid reset voltage Vg ' and negative source electrode reset voltage Vs ' and drain electrode reset voltage Vd '.Therefore, the present invention also can apply to the electrical replacement of P channel thin film transistors.
Please refer to Fig. 3, be the second embodiment of the present invention.The source electrode of switching transistor Ta and grid then are connected to a data line Data and one scan line Scan respectively.The drain D of driving transistors Tb and source S are electrically connected to a display voltage source and an Organic Light Emitting Diode E ' respectively, for example noninverting type Organic Light Emitting Diode, the grid G of driving transistors Tb are electrically connected to drain electrode, capacitor C and the reset voltage source of switching transistor Ta.The electrode of luminescence unit E ' is connected to the source S of driving transistors Tb, and another electrode is connected to an auxiliary voltage source Vss.
Please refer to Fig. 4, be the third embodiment of the present invention.Except the switching transistor Ta shown in Fig. 2 A, driving transistors Tb, luminescence unit E and capacitor C, one end of this capacitor C is connected to a reference potential Vref1, each picture element P has the switch of a thin film transistor (TFT) Tr as reset voltage source Vreset, the source terminal of thin film transistor (TFT) Tr is accepted a reset voltage source Vreset, one reference potential can be provided, and drain electrode end is connected to the gate terminal of drain electrode end, capacitor C and the driving transistors Tb of switching transistor Ta.What deserves to be mentioned is that the source terminal of all thin film transistor (TFT) Tr can shared same reset voltage source Vreset in the pixel array.During electrically resetting, switching transistor Ta is a closed condition, and this moment, thin film transistor (TFT) Tr opened to provide grid reset voltage Vg ' in driving transistors Tb.
More than three embodiment, Organic Light Emitting Diode is connected in the source electrode of thin film transistor (TFT) or drain electrode end only to display voltage source V
DDOr the adjustment voltage-regulation coefficient that auxiliary voltage source Vss is provided has Different Effects, do not influence the time point of adjusting the positive and negative of voltage or voltage being provided.
This method provide source electrode reset voltage and drain electrode reset voltage can be before the grid reset voltage be provided, afterwards or simultaneously.Because when electrically resetting, thin film transistor (TFT) is necessary for off state, otherwise Organic Light Emitting Diode can be luminous in during resetting and disturb the normal pictures demonstration.
Above-listed detailed description is at the specifying of preferred embodiment of the present invention, and only the foregoing description is not in order to limiting claim of the present invention, does not allly break away from the equivalence that skill spirit of the present invention does and implements or change, all should be contained in the claim of this case.
Claims (10)
1. the driving method of an active display, the thin film transistor (TFT) that is used for resetting electrically, it is characterized in that this method comprises at least:
The grid of one grid voltage to this thin film transistor (TFT) is provided;
The source electrode of one source pole voltage to this thin film transistor (TFT) is provided; And
The drain electrode of one drain voltage to this thin film transistor (TFT) is provided, wherein this grid voltage is less than or equal to this source voltage or this drain voltage, and this source voltage or this drain voltage are adjustable, and the pressure reduction of described grid voltage and this source voltage is greater than 30V and less than 100V.
2. the method for claim 1 is characterized in that, the pressure reduction of this grid voltage and this drain voltage is greater than 10V and less than 100V.
3. method as claimed in claim 2 is characterized in that the pressure reduction of this grid voltage and this drain voltage is greater than 30V and less than 100V.
4. the method for claim 1 is characterized in that, this grid voltage is less than or equal to 0V.
5. the method for claim 1 is characterized in that, this source voltage is more than or equal to 10V.
6. the method for claim 1 is characterized in that, this drain voltage is more than or equal to 10V.
7. the method for claim 1 is characterized in that, this provides the step of the grid that this grid voltage gives this thin film transistor (TFT) and this that step of the source electrode that this source voltage gives this thin film transistor (TFT) is provided is to carry out simultaneously.
8. the method for claim 1 is characterized in that, this provides the step of the grid that this grid voltage gives this thin film transistor (TFT) and this that step of the drain electrode that this drain voltage gives this thin film transistor (TFT) is provided is to carry out simultaneously.
9. method as claimed in claim 8 is characterized in that, this provides the step of the grid that this grid voltage gives this thin film transistor (TFT) and this that step of the source electrode that this source voltage gives this thin film transistor (TFT) is provided is to carry out simultaneously.
10. the method for claim 1 is characterized in that, this thin film transistor (TFT) is a N channel thin film transistors.
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| CNB2005100749675A CN100388342C (en) | 2005-06-06 | 2005-06-06 | Active type display device driving method |
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| CNB2005100749675A CN100388342C (en) | 2005-06-06 | 2005-06-06 | Active type display device driving method |
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| CN100388342C true CN100388342C (en) | 2008-05-14 |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1122165A (en) * | 1993-04-30 | 1996-05-08 | 普赖姆·弗尤香港有限公司 | Arangement for recovery of threshold voltage shift of noncrystalline siliceous film transistor device |
| WO2003050892A1 (en) * | 2001-11-20 | 2003-06-19 | International Business Machines Corporation | Active matrix organic light-emitting-diodes with amorphous silicon transistors |
| CN1448900A (en) * | 2002-03-29 | 2003-10-15 | 国际商业机器公司 | Apparatus and method for controlling display device, light-emitting diode screen and thin film transistor |
| CN1492665A (en) * | 2002-10-23 | 2004-04-28 | 友达光电股份有限公司 | Driving circuit of light-emitting module |
| US20050017929A1 (en) * | 2003-05-29 | 2005-01-27 | Keiichi Sano | Pixel circuit and display device |
| JP2005134838A (en) * | 2003-10-31 | 2005-05-26 | Sanyo Electric Co Ltd | Pixel circuit |
-
2005
- 2005-06-06 CN CNB2005100749675A patent/CN100388342C/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1122165A (en) * | 1993-04-30 | 1996-05-08 | 普赖姆·弗尤香港有限公司 | Arangement for recovery of threshold voltage shift of noncrystalline siliceous film transistor device |
| WO2003050892A1 (en) * | 2001-11-20 | 2003-06-19 | International Business Machines Corporation | Active matrix organic light-emitting-diodes with amorphous silicon transistors |
| CN1448900A (en) * | 2002-03-29 | 2003-10-15 | 国际商业机器公司 | Apparatus and method for controlling display device, light-emitting diode screen and thin film transistor |
| CN1492665A (en) * | 2002-10-23 | 2004-04-28 | 友达光电股份有限公司 | Driving circuit of light-emitting module |
| US20050017929A1 (en) * | 2003-05-29 | 2005-01-27 | Keiichi Sano | Pixel circuit and display device |
| JP2005134838A (en) * | 2003-10-31 | 2005-05-26 | Sanyo Electric Co Ltd | Pixel circuit |
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