CN100388102C - Film transistor liquid crystal display panel, its array substrate and mfg. method - Google Patents

Film transistor liquid crystal display panel, its array substrate and mfg. method Download PDF

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CN100388102C
CN100388102C CNB031500633A CN03150063A CN100388102C CN 100388102 C CN100388102 C CN 100388102C CN B031500633 A CNB031500633 A CN B031500633A CN 03150063 A CN03150063 A CN 03150063A CN 100388102 C CN100388102 C CN 100388102C
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colored filter
film transistor
filter film
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CN1591138A (en
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林丽年
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Chi Mei Optoelectronics Corp
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Chi Mei Optoelectronics Corp
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Abstract

The present invention relates to a film transistor liquid crystal display panel, an array base plate and a manufacturing method thereof. In the manufacturing method, a color light-filtering film is conformed on a film transistor array, and a color light-filtering lamina used as a black matrix is formed on the film transistor. Therefore, time can be saved and cost can be reduced. Additionally, the edge of a display area of the panel can also be provided with a color light-filtering lamina to reduce light leakage. Besides, a liquid crystal injecting hole is arranged at the edge of the display area. In order to increase the caliber of the hole and reduce the light leakage at the hole, a color light-filtering region block can be provided for matching with an overlapped metal layer. Additionally, the color light-filtering lamina and other dielectric layers need to avoid welding spots of the repairing structure for avoiding that bursting occurs when the repairing and manufacturing process is carried out. A reserving capacitor can also use the previous characteristic to make the color light-filtering lamina avoid the overlapping position, and the bad contact problem between the metal layer and the interface of a pixel electrode can be solved by welding.

Description

Liquid crystal display panel of thin film transistor, its array base palte and preparation method thereof
Technical field
The invention relates to a kind of display panels (liquid crystal display panel), and particularly about a kind of liquid crystal display panel of thin film transistor that (color filter onarray is called for short COA) make, its array base palte and preparation method thereof that colored filter film is integrated on the thin film transistor (TFT) array.
Background technology
Along with high-tech development, video product, particularly digitized video signal or device for image become in general daily life common product.In these digitized video signals or the device for image, display is a significant components, to show relevant information.The user can read information by display, or and then the running of control device.
In order to cooperate modern life pattern, it is thin light that the volume of video signal or device for image day by day is tending towards.Traditional cathode layer ray display, though still have its advantage, it need take large volume and power consumption.Therefore, cooperate photoelectric technology and semiconductor fabrication, the display of panel type has been developed to become common display product, for example Thin Film Transistor-LCD at present.Thin Film Transistor-LCD is owing to have conventional cathode ray tube (cathode ray tube such as low voltage operating, radiationless line scattering, in light weight and volume be little, be called for short CRT) display of the manufacturing advantage that is beyond one's reach, with other panel display such as plasma scope and electroluminescence (electroluminance) display, become the major subjects of display research in recent years, more be regarded as the main flow of 21st century display.
And known liquid crystal display panel of thin film transistor as shown in Figure 1, has a thin-film transistor array base-plate 102, a subtend substrate 104 and a liquid crystal layer (not illustrating) usually, and wherein liquid crystal layer is between substrate 102 and 104.And thin film transistor (TFT) array 112 is arranged on thin-film transistor array base-plate 102, comprising scan wiring, data wiring and several thin film transistor (TFT)s etc.Then, between substrate 102 and 104, have a frame glue 106,, liquid crystal can be stayed wherein in order to the space between closed substrate 102 and 104, and the zone that this is closed mainly is in order to display pattern or color, therefore is called viewing area (display region).And frame glue 106 needs to reserve a liquid crystal injecting port (LCinjection hole) 108, injects in order to liquid crystal.
Except above-mentioned common liquid crystal display panel of thin film transistor, the technology that a kind of making liquid crystal display panel of thin film transistor that attracts attention is more arranged at present, it is characterized in that on substrate 102, directly making colored filter film, and one of its advantage is to improve the panel aperture opening ratio with thin film transistor (TFT) array 112.It is therefore, this that colored filter film is integrated in the liquid crystal display panel of thin film transistor of making on the thin-film transistor array base-plate is to be applied to one of frivolous, high-resolution NB panel or display panels of products such as LCD TV, high-order LCD monitor at present.
Yet, aforementioned colored filter film is integrated in the liquid crystal display panel of thin film transistor of making on the thin-film transistor array base-plate, following shortcoming is arranged:
It at first is example with Fig. 1, generally before directly making colored filter film on the substrate 104 with thin film transistor (TFT) array 112, unavoidable ground all needs black matrix" (black matrix, be called for short BM) make earlier, therefore to how to reduce the manufacture craft time and the cost of the liquid crystal display panel of thin film transistor that utilizes the COA fabrication techniques, become one of emphasis of each side's research.And when BM and colored filter film are when being formed at a different plate base, then aforementioned both contraposition problem will have influence on the yield of product.
Moreover the edge of display area in Fig. 1 (border) 110 often has between the circuit of light leak from the substrate 102 and emits, and influences the display quality of liquid crystal display panel of thin film transistor.In addition, the liquid crystal injecting port 108 reserved of edge, viewing area has the light leak problem equally and is badly in need of solving.
In addition, usually each thin film transistor (TFT) in the thin film transistor (TFT) array 112 of Fig. 1 or the lead of thin film transistor (TFT) array 112 peripheries all can have one and repair (repair) structure (not illustrating), to repair manufacture craft in the thin film transistor (TFT) fault or when producing line defect (line defect).But, known preparing structure but Chang Yinwei is covered by thick dielectric layer, and dielectric layer explosion (burst) phenomenon takes place when repairing manufacture craft, so that can't finish the repairing manufacture craft, the thin film transistor (TFT) that causes needs to be repaired still can't use, and line defect also can't be repaired.
Except that aforementioned each shortcoming, please referring again to Fig. 1, each thin film transistor (TFT) in the thin film transistor (TFT) array 112 also has a reservior capacitor (storage capacitor, claim Cst again), its structure mainly is folder one insulation course between two metal layers, and need to control to be subjected to thin film transistor (TFT) by being connected with pixel electrode than the metal level on upper strata.But, because little shadow manufacture craft is for example developed or the error of etching process, exposure or etching are not incomplete fully to make dielectric layer on the reservior capacitor, and have the part dielectric layer residual, make liquid crystal capacitance can't in required time, keep certain GTG so can cause the interface loose contact of metal level and pixel electrode, cause panel usefulness (performance) variation.
Summary of the invention
Therefore, the present invention's purpose provides a kind of liquid crystal display panel of thin film transistor and preparation method thereof, to save the manufacture craft time.
The present invention's a purpose again provides a kind of liquid crystal display panel of thin film transistor and preparation method thereof, to reduce manufacturing cost.
Another object of the present invention provides a kind of liquid crystal display panel of thin film transistor and preparation method thereof, to reduce the light leak at edge, viewing area.
The present invention's another purpose provides a kind of liquid crystal display panel of thin film transistor and preparation method thereof, to reduce the light leak of liquid crystal injecting port.
The present invention's another purpose provides a kind of liquid crystal display panel of thin film transistor and preparation method thereof, to avoid preparing structure the dielectric layer explosion takes place when repairing manufacture craft.
Another object of the present invention provides a kind of liquid crystal display panel of thin film transistor and preparation method thereof, to solve the problem of reservior capacitor loose contact.
According to above-mentioned and other purpose, the present invention proposes a kind of thin-film transistor array base-plate, comprises a base material, scan wiring, data wiring, thin film transistor (TFT), pixel electrode, colored filter film and colorized optical filtering lamination.And scan wiring and data wiring are configured on the base material, and wherein data wiring and scan wiring constitute several pixel regions.And thin film transistor (TFT) is the staggered place that is disposed at data wiring and scan wiring, and by data wiring and scan wiring control.Pixel electrode then is to be disposed in the pixel region, and electrically connects with corresponding thin film transistor (TFT) respectively.Moreover colored filter film is disposed on the pixel region, and the colorized optical filtering lamination then is disposed on the colored filter film of thin film transistor (TFT) top.
In addition, as add a subtend substrate and liquid crystal layer be clipped in get final product between the two substrates a liquid crystal display panel of thin film transistor.
The present invention proposes a kind of thin film transistor pixel structure again, has several pixel regions on a base material, comprising several pixel electrodes, several thin film transistor (TFT)s, several leads, several first, second and the 3rd colorized optical filtering lamination.Pixel electrode is to be positioned at pixel region, thin film transistor (TFT) then to be disposed at pixel region.Lead then is disposed at the junction of pixel region, and in order to define pixel region, wherein pixel electrode and lead are via the thin film transistor (TFT) electrically connect.The first colorized optical filtering lamination is positioned at pixel region, the second colorized optical filtering lamination is positioned on the lead and the 3rd colorized optical filtering lamination is positioned on the thin film transistor (TFT).
The present invention proposes a kind of manufacture method of thin-film transistor array base-plate again, is included on the base material to form a first metal layer, and patterning the first metal layer again is to form several grids and several scan wirings.Then, on base material, form a gate insulator, on grid, form a patterning amorphous silicon layer again, to form several channel layers.Afterwards, on base material, form one second metal level, patterning second metal level again, with form several source electrodes, several drain on the grid and form several data distributions on base material, wherein data wiring and scan wiring constitute several pixel regions, and several thin film transistor (TFT)s are formed in grid, channel layer, source electrode and drain electrode.Then, in a little pixel regions, form several first colored filter film, form first colored filter film that several second colored filter film are covered in the thin film transistor (TFT) top again.Then, form several pixel electrodes on the base material in pixel region, these pixel electrodes electrically connect with corresponding thin film transistor (TFT) respectively.
In addition, can provide a subtend substrate again,, between subtend substrate and thin-film transistor array base-plate, form a liquid crystal layer then, can produce liquid crystal display panel of thin film transistor with respect to the thin-film transistor array base-plate configuration.
The present invention proposes a kind of method for making of thin-film transistor array base-plate again, is included in and forms some scan wirings on the base material, forms several data wirings again on base material, and wherein data wiring and scan wiring constitute several pixel regions.Afterwards, form several thin film transistor (TFT)s in the staggered place of data wiring and scan wiring, and thin film transistor (TFT) is by data wiring and scan wiring control, then, form several pixel electrodes in pixel region, these pixel electrodes electrically connect with corresponding thin film transistor (TFT) respectively.Then, on pixel region, form several colored filter film, on the colored filter film of thin film transistor (TFT) top, form several colorized optical filtering laminations again.
The present invention continues to propose a kind of thin-film transistor array base-plate, comprises a viewing area and a non-display area, it is characterized in that being disposed at the ring-type colorized optical filtering lamination of non-display area around edge of display area.
The present invention reintroduces a kind of thin-film transistor array base-plate, comprises a viewing area and a non-display area, it is characterized in that several the first metal layers, is disposed at edge of display area, that is non-display area; And several second metal levels, the first metal layer of overlapping configuration is to prevent the edge of display area light leak.
The present invention reintroduces a kind of thin-film transistor array base-plate, comprises a viewing area and a non-display area, it is characterized in that a first metal layer, is disposed at edge of display area, one second metal level, the first metal layer of overlapping configuration; And at least one ring-type colored filter film, dispose around edge of display area.
The present invention reintroduces a kind of light-shielding structure, be applicable to one of thin-film transistor array base-plate non-display area, comprise a first metal layer, be disposed at non-display area, one second metal level, with the first metal layer overlay configuration, wherein first and second metal level is with an insulation course electrical isolation; And at least one colored filter film, be disposed on first and second metal level.
The present invention reintroduces a kind of manufacture method of thin-film transistor array base-plate, is included in to form a first metal layer on the base material, and wherein base material comprises a viewing area and a non-display area.Afterwards, the patterning the first metal layer, to form several grids and several scan wirings, wherein scan wiring extends to edge of display area.Then, on base material, form a gate insulator and an amorphous silicon layer, remove grid top amorphous silicon layer in addition again, to form several channel layers.Afterwards, on base material, form one second metal level, patterning second metal level again, with in forming source electrode, drain electrode on the grid, on base material, forming the data distribution and form several and intend metal level in edge of display area, wherein data wiring and scan wiring constitute several pixel regions, and several thin film transistor (TFT)s are formed in grid, channel layer, source electrode and drain electrode, and the plan metal level partially overlaps scan wiring.Then, form one first colored filter film on base material, patterning first colored filter film again is to keep in the pixel region and part first colored filter film of edge of display area.Then, form first colored filter film that one second colored filter film is covered in edge of display area.Then, form several pixel electrodes on the base material in pixel region, these pixel electrodes electrically connect with corresponding thin film transistor (TFT) respectively.
The present invention proposes a kind of method for making of thin-film transistor array base-plate again, comprise a base material is provided, it comprises a viewing area and a non-display area, it is characterized in that on the base material in non-display area forming a ring-type colorized optical filtering lamination, and ring-type colorized optical filtering lamination and around edge of display area.
The present invention proposes a kind of method for making of thin-film transistor array base-plate again, is included in to form a first metal layer on the base material, and base material comprises a viewing area and a non-display area.Then, the patterning the first metal layer, to form several grids and several scan wirings in the viewing area, wherein scan wiring extends to edge of display area.Then, on base material, form a gate insulator, on grid, form a patterning amorphous silicon layer again, to form several channel layers.Afterwards, on base material, form one second metal level, patterning second metal level again, on grid, to form several source electrodes, several drain electrodes, and on base material, form several data distributions and form several plan metal levels in edge of display area, wherein data wiring and scan wiring constitute several pixel regions, and several thin film transistor (TFT)s are formed in grid, channel layer, source electrode and drain electrode, and intend metal level and partially overlap scan wiring, to prevent the edge of display area light leak.Then, form several colored filter film on the base material in pixel region, form several pixel electrodes again on the base material in the viewing area, these pixel electrodes and corresponding thin film transistor (TFT) electric connection.
The present invention proposes a kind of method for making of thin-film transistor array base-plate again, is included in to form a first metal layer on the base material, and base material comprises a viewing area and a non-display area.Afterwards, the patterning the first metal layer is intended metal level to form several grids and several scan wirings and form several in edge of display area in the viewing area.Subsequently, on base material, form a gate insulator, on grid, form a patterning amorphous silicon layer again, to form several channel layers.Afterwards, on base material, form one second metal level, patterning second metal level again, with several source electrodes of formation, several drain electrodes on grid, and form several data distributions on base material, wherein the data distribution extends to edge of display area, and data wiring and scan wiring constitute several pixel regions, and several thin film transistor (TFT)s are formed in grid, channel layer, source electrode and drain electrode, partially overlap the data distribution and intend metal level, to prevent the edge of display area light leak.Then, form several colored filter film on the base material in pixel region, form several pixel electrodes again on the base material in the viewing area, pixel electrode and corresponding thin film transistor (TFT) electric connection.
The present invention proposes a kind of method for making of thin-film transistor array base-plate again, comprise a base material is provided, it comprises a viewing area and a non-display area, it is characterized in that forming several the first metal layers and on base material, forming several second metal levels at edge of display area, and second metal level the first metal layer of overlapping is to prevent the edge of display area light leak.
The present invention and propose a kind of method for making of thin-film transistor array base-plate is included in and forms a first metal layer on the base material, and base material comprises a viewing area and a non-display area.Then, the patterning the first metal layer, to form several grids and several scan wirings in the viewing area, wherein scan wiring extends to edge of display area, forms a gate insulator again on base material.Then, on grid, form a patterning amorphous silicon layer,, on base material, form one second metal level again to form several channel layers.Afterwards, patterning second metal level, on grid, to form several source electrodes, several drain electrodes, and on base material, form several data distributions and form several plan metal levels in edge of display area, wherein data wiring and scan wiring constitute several pixel regions, several thin film transistor (TFT)s are formed in grid, channel layer, source electrode and drain electrode, and intend metal level and partially overlap scan wiring, to prevent the edge of display area light leak.Afterwards, form one first colored filter film on base material, patterning first colored filter film forms one first ring-type colored filter film with part first colored filter film in the reservation pixel region and in edge of display area again.Subsequently, form several pixel electrodes on the base material in the viewing area, these pixel electrodes and corresponding thin film transistor (TFT) electric connection.
The present invention reintroduces a kind of method for making of thin-film transistor array base-plate, be included in and form a first metal layer on the base material, base material comprises a viewing area and a non-display area, the patterning the first metal layer is intended metal level to form several grids and several scan wirings and form several in edge of display area in the viewing area again.Afterwards, on base material, form a gate insulator, on grid, form a patterning amorphous silicon layer again, to form several channel layers.Then, on base material, form one second metal level, patterning second metal level again, with several source electrodes of formation, several drain electrodes on grid, and form several data distributions on base material, wherein the data distribution extends to edge of display area, wherein data wiring and scan wiring constitute several pixel regions, several thin film transistor (TFT)s are then formed in grid, channel layer, source electrode and drain electrode, and intend metal level and partially overlap the data distribution, to prevent the edge of display area light leak.Then, form one first colored filter film on base material, patterning first colored filter film forms one first ring-type colored filter film with part first colored filter film in the reservation pixel region and in edge of display area again.Then, form several pixel electrodes on the base material in the viewing area, these pixel electrodes and thin film transistor (TFT) electrically connect.
The present invention reintroduces a kind of method for making of thin-film transistor array base-plate, comprise a base material is provided, base material comprises a viewing area and a non-display area, it is characterized in that forming several the first metal layers at edge of display area, on base material, form several second metal levels again, second metal level the first metal layer of overlapping.Subsequently, form at least one ring-type colored filter film around edge of display area.
The present invention reintroduces a kind of thin-film transistor array base-plate, comprise a viewing area and a non-display area, wherein non-display area has a liquid crystal injecting port, it is characterized in that having several the first metal layers, be disposed at non-display area, several second metal levels, the first metal layer of overlapping configuration, a colorized optical filtering lamination are disposed at liquid crystal injecting port non-display area in addition; And one first colorized optical filtering block, be positioned on the liquid crystal injecting port institute area exposed of non-display area.
The present invention reintroduces a kind of thin-film transistor array base-plate, comprise a viewing area and a non-display area, wherein edge of display area has a liquid crystal injecting port, it is characterized in that having several the first metal layers, be disposed on the base material that liquid crystal injecting port exposed of edge of display area and several second metal levels, the first metal layer of overlapping configuration is to prevent this liquid crystal injecting port light leak of this edge of display area.
The present invention reintroduces a kind of manufacture method of thin-film transistor array base-plate, is included in to form a first metal layer on the base material, and wherein base material comprises a viewing area and a non-display area, and edge of display area has a liquid crystal injecting port.Afterwards, the patterning the first metal layer, to form several grids and several scan wirings, wherein scan wiring extends to edge of display area.Then, on base material, form a gate insulator and an amorphous silicon layer, remove grid top amorphous silicon layer in addition again, to form several channel layers.Afterwards, on base material, form one second metal level, patterning second metal level again, with in forming source electrode, drain electrode on the grid, on base material, forming the data distribution and form several and intend metal level in edge of display area, wherein data wiring and scan wiring constitute several pixel regions, and several thin film transistor (TFT)s are formed in grid, channel layer, source electrode and drain electrode, and the plan metal level partially overlaps scan wiring.Then, form a colored filter film on base material, this colored filter film of patterning again is to keep in the pixel region and the colorized optical filtering block on the base material that liquid crystal injecting port was exposed of edge of display area.Then, form several pixel electrodes on the base material in pixel region, these pixel electrodes electrically connect with corresponding thin film transistor (TFT) respectively.
The present invention then proposes a kind of method for making of thin-film transistor array base-plate, is included in to form a first metal layer on the base material, and base material comprises a viewing area and a non-display area, and wherein edge of display area has a liquid crystal injecting port.Afterwards, the patterning the first metal layer is intended metal level to form several grids and several scan wirings and form several in the viewing area on the base material that liquid crystal injecting port was exposed of edge of display area.Then, on base material, form a gate insulator, on grid, form a patterning amorphous silicon layer again, to form several channel layers.Afterwards, on base material, form one second metal level, patterning second metal level again, with several source electrodes of formation, several drain electrodes on grid, and form several data distributions on base material, these data distributions extend to the liquid crystal injecting port of edge of display area, wherein data wiring and scan wiring constitute several pixel regions, and intend metal level and partially overlap the data distribution, preventing the liquid crystal injecting port light leak of edge of display area, and several thin film transistor (TFT)s are formed in grid, channel layer, source electrode and drain electrode.Then, in pixel region, form several colored filter film, in pixel region, form several pixel electrodes again, these pixel electrodes and corresponding thin film transistor (TFT) electric connection.
The present invention then reintroduces a kind of method for making of thin-film transistor array base-plate, comprise a base material is provided, base material comprises a viewing area and a non-display area, wherein the non-display area edge has a liquid crystal injecting port, it is characterized in that forming several the first metal layers at edge of display area, form several second metal levels afterwards on base material, these second metal levels the first metal layer of overlapping is to prevent the liquid crystal injecting port light leak of edge of display area.
The present invention reintroduces a kind of method for making of thin-film transistor array base-plate, is included in to form a first metal layer on the base material, and base material comprises a viewing area and a non-display area, and wherein edge of display area has a liquid crystal injecting port.Afterwards, the patterning the first metal layer is intended metal level to form several grids and several scan wirings and form in the viewing area on the base material that liquid crystal injecting port was exposed of edge of display area.Afterwards, on base material, form a gate insulator and an amorphous silicon layer, remove grid top amorphous silicon layer in addition again, to form several channel layers.Subsequently, on base material, form one second metal level, patterning second metal level again, on grid, to form several source electrodes, several drain electrodes, and on base material, form several data distributions, and these data distributions extend to the liquid crystal injecting port of edge of display area, and wherein data wiring and scan wiring constitute several pixel regions, and intend metal level and partially overlap scan wiring, and several thin film transistor (TFT)s are formed in grid, channel layer, source electrode and drain electrode.Then, form a colored filter film on base material, patterning colored filter film again is to keep the partial colour light filter film in the pixel region and form one first colorized optical filtering block on the base material that liquid crystal injecting port was exposed of edge of display area.Afterwards, in pixel region, form several pixel electrodes, these pixel electrodes and corresponding thin film transistor (TFT) electric connection.
The present invention reintroduces a kind of method for making of thin-film transistor array base-plate, comprise a base material is provided, base material comprises a viewing area and a non-display area, wherein the non-display area edge has a liquid crystal injecting port, it is characterized in that forming several the first metal layers at edge of display area, on base material, form several second metal levels again, these second metal levels the first metal layer of overlapping.Subsequently, on the liquid crystal injecting port institute area exposed of edge of display area, form one first colorized optical filtering block.
The present invention then reintroduces a kind of thin-film transistor array base-plate, has several preparing structures, and its structure comprises the first metal layer, second metal level, insulation course, channel layer, dielectric layer, transparency electrode and at least one colored filter film.The first metal layer is configured on the base material, and it comprises scan wiring, grid and several first repairing metal levels.Insulation course then covers the first metal layer.And channel layer is disposed on the insulation course of grid top.Second metal level then is configured on the base material, it comprises source electrode, individual drain electrode, data distribution and several second repairing metal levels, wherein source electrode and drain configuration are in the channel layer both sides of grid top, and data wiring and scan wiring constitute several pixel regions, and the second repairing metal level and the first repairing metal level overlap each other, forming several preparing structures, and several thin film transistor (TFT)s are formed in grid, channel layer, source electrode and drain electrode.And dielectric layer is disposed on the first metal layer, insulation course and second metal level, wherein dielectric layer has the opening of repairing and contact window, and the repairing opening exposes the second repairing metal level of preparing structure, the source electrode that contact window then exposes thin film transistor (TFT).Transparency electrode is to be disposed on the dielectric layer, comprise several pixel electrodes and several floating electrodes, wherein pixel electrode is disposed in the pixel region, electrically connect with the source electrode of corresponding thin film transistor (TFT) respectively by contact window, and floating electrode is repaired the metal electric connection by repairing opening and second.Moreover colored filter film is to be disposed to repair on the opening pixel region in addition.
In addition, as add a subtend substrate and liquid crystal layer be clipped in get final product between the two substrates a liquid crystal display panel of thin film transistor.
The present invention reintroduces a kind of manufacture method of thin-film transistor array base-plate, is included on the base material to form a first metal layer, and patterning the first metal layer is again repaired metal level to form scan wiring, grid and several first.Afterwards, on base material, form a gate insulator and an amorphous silicon layer, and remove the amorphous silicon layer beyond the grid top, to form channel layer.Then, on base material, form one second metal level, patterning second metal level again, to form source electrode, drain electrode, data distribution and several second repairing metal levels, wherein source electrode and drain configuration be in the channel layer both sides of grid top, and data wiring and scan wiring constitute several pixel regions, and second repairs metal level and the first repairing metal level overlaps each other, to form preparing structure, several thin film transistor (TFT)s are then formed in grid, channel layer, source electrode and drain electrode.Then, on the first metal layer, insulation course and second metal level, form a dielectric layer, wherein dielectric layer has the opening of repairing and contact window, repair the second repairing metal level, the source electrode that contact window then exposes thin film transistor (TFT), several first colored filter film of formation in the pixel region beyond opening again that opening exposes preparing structure.Afterwards, form several second colored filter film, be covered in part first colored filter film of thin film transistor (TFT) top, on base material, form a transparency electrode again, it comprises several pixel electrodes and several floating electrodes, pixel electrode electrically connects with the source electrode of corresponding thin film transistor (TFT) respectively by contact window, and floating electrode is repaired the metal electric connection by repairing opening and second.
In addition, can provide a subtend substrate again,, between subtend substrate and thin-film transistor array base-plate, form a liquid crystal layer then, can produce liquid crystal display panel of thin film transistor with respect to the thin-film transistor array base-plate configuration.
The present invention reintroduces a kind of method for making of thin-film transistor array base-plate, is included in and forms a first metal layer on the base material, comprising several scan wirings, several grids and several first repairing metal levels.Afterwards, on base material, form an insulation course and cover the first metal layer, on the insulation course of grid top, form several channel layers again, on base material, form one second metal level again, it comprises several source electrodes, several drain electrodes, several data distributions and several second repairing metal levels, wherein source electrode and drain configuration are in the channel layer both sides of grid top, and data wiring and scan wiring constitute several pixel regions, and the second repairing metal level and the first repairing metal level overlap each other, with the composition preparing structure, and grid, channel layer, several thin film transistor (TFT)s are formed in source electrode and drain electrode.Then, on the first metal layer, insulation course and second metal level, form a dielectric layer, wherein dielectric layer has several repairing opening and several contact windows, and the repairing opening exposes the second repairing metal level of preparing structure, the source electrode that contact window then exposes thin film transistor (TFT).Afterwards, form several pixel electrodes in pixel region, wherein pixel electrode electrically connects with the source electrode of corresponding thin film transistor (TFT) respectively by contact window, forms at least one colored filter film again on the pixel region of repairing beyond the opening.
The present invention reintroduces a kind of thin-film transistor array base-plate, has several reservior capacitors, and its structure comprises the first metal layer, second metal level, insulation course, channel layer, dielectric layer, protective seam, pixel electrode and colored filter film.The first metal layer is configured on the base material, and it comprises scan wiring, grid and several first storage capacitors metal levels, and it has several first openings.Insulation course then covers the first metal layer.And channel layer is disposed on the insulation course of grid top.Second metal level then is configured on the base material, it comprises source electrode, individual drain electrode, data distribution and several second storage capacitors metal levels, wherein source electrode and drain configuration are in the channel layer both sides of grid top, and data wiring and scan wiring constitute several pixel regions, and the second storage capacitors metal level and the first storage capacitors metal level overlap each other, forming reservior capacitor with insulation course, and several thin film transistor (TFT)s are formed in grid, channel layer, source electrode and drain electrode.And dielectric layer is disposed on the first metal layer, insulation course and second metal level, wherein dielectric layer has several second openings and several the 3rd openings, and second opening roughly exposes the second storage capacitors metal level of first opening top, the source electrode that the 3rd opening then exposes thin film transistor (TFT).Pixel electrode then is disposed in the pixel region, and wherein pixel electrode electrically connects with the second storage capacitors metal level respectively by second opening and by the source electrode electric connection of the 3rd opening with corresponding thin film transistor (TFT).Moreover colored filter film is to be disposed on second opening pixel region in addition.
In addition, as add a subtend substrate and liquid crystal layer be clipped in get final product between the two substrates a liquid crystal display panel of thin film transistor.
The present invention proposes a kind of manufacture method of thin-film transistor array base-plate in addition, be included in and form a first metal layer on the base material, the patterning the first metal layer to form scan wiring, grid and several first storage capacitors metal levels, has several first openings again.Afterwards, on base material, form a gate insulator, on those grids, form a patterning amorphous silicon layer again, to form channel layer.Then, on base material, form one second metal level, patterning second metal level again, to form source electrode, drain electrode, data distribution and several second storage capacitors metal levels, wherein source electrode and drain configuration are in the channel layer both sides of grid top, and data wiring and scan wiring constitute several pixel regions, and the second storage capacitors metal level and the first storage capacitors metal level overlap each other, to form reservior capacitor with insulation course, several thin film transistor (TFT)s are then formed in grid, channel layer, source electrode and drain electrode.Then, on the first metal layer, insulation course and second metal level, form a dielectric layer, wherein dielectric layer has second opening and the 3rd opening, and second opening roughly exposes the second storage capacitors metal level of first opening top, the source electrode that the 3rd opening then exposes thin film transistor (TFT).Then, form several colored filter film in the pixel region beyond second opening.Afterwards, on base material, form several pixel electrodes, electrically connect with the second storage capacitors metal level respectively and by of the source electrode electric connection of the 3rd opening with corresponding thin film transistor (TFT) by second opening.
In addition, can provide a subtend substrate again,, between subtend substrate and thin-film transistor array base-plate, form a liquid crystal layer then, can produce liquid crystal display panel of thin film transistor with respect to the thin-film transistor array base-plate configuration.
Last the present invention proposes a kind of method for making of thin-film transistor array base-plate, be included in and form a first metal layer on the base material, this the first metal layer comprises several scan wirings, several grids and several first storage capacitors metal levels, and wherein the first storage capacitors metal level has several first openings.Then, on base material, form an insulation course, cover the first metal layer, on the insulation course of grid top, form several channel layers again, on base material, form one second metal level again, wherein second metal level comprises several source electrodes, several drain electrodes, several data distributions and several second storage capacitors metal levels, wherein source electrode and drain configuration are in the channel layer both sides of grid top, and data wiring and scan wiring constitute several pixel regions, and these the second storage capacitors metal levels and the first storage capacitors metal level overlap each other, to form reservior capacitor and grid with insulation course, channel layer, several thin film transistor (TFT)s are formed in source electrode and drain electrode.Afterwards, on the first metal layer, insulation course and second metal level, form a dielectric layer, wherein dielectric layer has several second openings and several the 3rd openings, and second opening roughly exposes the second storage capacitors metal level of first opening top, the source electrode that the 3rd opening then exposes thin film transistor (TFT).Then, form several pixel electrodes in pixel region, wherein pixel electrode electrically connects with the second storage capacitors metal level respectively by second opening and by the source electrode electric connection of the 3rd opening with corresponding thin film transistor (TFT).Then, on the pixel region beyond second opening, form several colored filter film.
The present invention replaces black matrix" owing to form the colorized optical filtering lamination of storehouse on thin film transistor (TFT), therefore can save manufacture craft time and cost.
And the edge of display area of thin-film transistor array base-plate of the present invention can arrange in pairs or groups colorized optical filtering lamination and partly overlapping metal level are so can obtain splendid shaded effect.
In addition, the present invention adopts partly overlapping metal level and the colorized optical filtering block of can arranging in pairs or groups in the liquid crystal injecting port structure of the edge of display area of thin-film transistor array base-plate, so can obtain splendid shaded effect and increase the bore of liquid crystal injecting port.
Moreover the present invention only has a protective seam to be covered on the solder joint of preparing structure of thin-film transistor array base-plate, so can not take place knownly because of dielectric layer is arranged on the solder joint, and dielectric layer explosion phenomenon takes place when repairing manufacture craft.
In addition, the reservior capacitor structure of colored filter film integrated transistor array base palte of the present invention is because adopt solder joint as preparing structure, so can improve the situation of the panel usefulness variation that the interface loose contact of the metal level that comes from reservior capacitor and pixel electrode caused.And the first metal layer wherein avoids the opening as solder joint, so when carrying out welding production technology, can avoid the mistake of first and second metal level conducting to take place.
In a word, the present invention utilize storehouse the colorized optical filtering lamination replace black matrix", so can significantly save manufacture craft time and cost.In addition, the present invention goes back the specific (special) requirements of while in response to each position of display panels, on manufacture craft and structure, improve, and cooperate basic manufacturing process, so the present invention can make the making of liquid crystal display panel of thin film transistor reach the most time saving and energy saving effect.
For above and other objects of the present invention, feature and advantage can be become apparent, preferred embodiment cited below particularly, and cooperate appended graphicly, be described in detail below:
Description of drawings
Figure 1 shows that known liquid crystal display panel of thin film transistor synoptic diagram;
Perspective diagram according to liquid crystal display panel of thin film transistor of the present invention shown in Figure 2;
Fig. 3 A to Fig. 3 D is according to the manufacturing process diagrammatic cross-section of the thin-film transistor array base-plate of the first embodiment of the present invention;
Fig. 4 is according to the vertical view of the thin-film transistor array base-plate of the first embodiment of the present invention;
Fig. 5 A to Fig. 5 C is according to the manufacturing process diagrammatic cross-section of the liquid crystal display panel of thin film transistor of one second embodiment of the present invention;
Fig. 5 D is according to the diagrammatic cross-section of the liquid crystal display panel of thin film transistor of the second embodiment of the present invention;
Fig. 6 is according to the vertical view of the edge of display area of the thin-film transistor array base-plate of the second embodiment of the present invention;
Fig. 7 A to Fig. 7 B is according to the manufacturing process diagrammatic cross-section of the liquid crystal display panel of thin film transistor of the third embodiment of the present invention;
Fig. 8 is according to the vertical view of the liquid crystal injecting port of the thin-film transistor array base-plate of the third embodiment of the present invention;
Fig. 9 A to Fig. 9 D is according to the manufacturing process diagrammatic cross-section of the thin-film transistor array base-plate of the fourth embodiment of the present invention;
Figure 10 is according to the vertical view of the preparing structure of the thin-film transistor array base-plate of the fourth embodiment of the present invention;
Figure 11 A to Figure 11 D is according to the manufacturing process diagrammatic cross-section of the reservior capacitor of the thin-film transistor array base-plate of the fifth embodiment of the present invention; And
Figure 12 is according to the vertical view of the reservior capacitor of the thin-film transistor array base-plate of the fifth embodiment of the present invention.
Label declaration
102,104,202,204: substrate 106,522: frame glue
108,700: liquid crystal injecting port 110: edge of display area
112: thin film transistor (TFT) array 200: liquid crystal display panel of thin film transistor
210: scan wiring 212: the data distribution
214: pixel region 216: thin film transistor (TFT)
218: pixel electrode 220: the colorized optical filtering lamination
222: shared electrode 302: grid
304: insulation course 306: channel layer
308: source electrode and drain electrode 314,316,318: colored filter film
312: protective seam 322: dielectric layer
326: light spacer 340: liquid crystal layer
400,910,1103,1110: opening 500: viewing area
502,506,902,906,1102,1106: metal level
Embodiment
The present invention is integrated in (color filter onarray on the thin film transistor (TFT) array in one with colored filter film, abbreviation COA) different designs is done in each zone of the thin-film transistor array base-plate of making, with the demand that meets every manufacture craft or use, and the making that can omit black matrix".And be to describe application of the present invention in detail, please refer to following each embodiment.
First embodiment
Shown in the 2nd figure according to the perspective diagram of liquid crystal display panel of thin film transistor of the present invention.
Please refer to the 2nd figure, liquid crystal display panel of thin film transistor 200 of the present invention is made of a thin-film transistor array base-plate 202, a subtend substrate 204 and a liquid crystal layer (not illustrating), and wherein liquid crystal layer is between thin-film transistor array base-plate 202 and subtend substrate 204.And on thin-film transistor array base-plate 202, have several scan wirings 210, several data wirings 212, thin film transistor (TFT) 216, pixel electrode 218, colored filter film (indicating) and several colorized optical filtering laminations 220.And data distribution 212 constitutes several pixel regions 214 with scan wiring 210.Moreover what dispose in the staggered place of data wiring 212 and scan wiring 210 is thin film transistor (TFT) 216, and it is by data wiring 212 and scan wiring 210 controls.Pixel electrode 218 then is disposed in the pixel region 214, and electrically connects with corresponding thin film transistor (TFT) 216 respectively.Colored filter film (not illustrating) then is disposed on the pixel region 214, and wherein colored filter film comprises red filter film, green filter film and blue light filter film.Colorized optical filtering lamination 220 then is to be disposed on the colored filter film of thin film transistor (TFT) 216 tops, when colored filter film was the colored filter film of first coloured light, 220 of colorized optical filtering laminations for example were second coloured light of mutual storehouse and colored filter film or second coloured light of simple layer or the color light filter film of the 3rd coloured light of the 3rd coloured light.And, when colorized optical filtering lamination 220 is the colored filter film of second coloured light of mutual storehouse and the 3rd coloured light, near that one deck colored filter film of thin film transistor (TFT) 216 than thick away from that one deck colored filter film of thin film transistor (TFT) 216.Moreover best because of the extinction efficient of blue light filter film, taking second place is red filter film, green filter film, and therefore when only selecting one deck colored filter film, blue light filter film should be preferable selection.And the manufacturing process of present embodiment such as following Fig. 3 A to Fig. 3 D.
Fig. 3 A to Fig. 3 D is according to the manufacturing process diagrammatic cross-section of the thin-film transistor array base-plate of the first embodiment of the present invention.Please form a first metal layer on a base material 202 simultaneously with reference to Fig. 2 and Fig. 3 A, patterning the first metal layer again is to form several grids 302 and several scan wirings (ask for an interview Fig. 2 210).Afterwards, on base material 202, form a gate insulator 304 and an amorphous silicon layer, remove grid 302 tops amorphous silicon layer in addition again, to form several channel layers 306.Subsequently, form one second metal level on base material 202, patterning second metal level again is to form several data distributions (ask for an interview Fig. 2 212) in forming several source electrodes on the grid 302 with drain electrode 308 and on base material 300.Wherein, data distribution and scan wiring constitute several pixel regions (ask for an interview Fig. 2 214), and grid 302, channel layer 306, source electrode, drain electrode 308 are formed several thin film transistor (TFT)s 216.
Then, please on thin film transistor (TFT) 216, form a protective seam 312, on pixel region 214, form one first colored filter film 314 more simultaneously with reference to Fig. 2 and Fig. 3 B.Then, form colorized optical filtering lamination 220 on first colored filter film 314 of thin film transistor (TFT) 216 tops, wherein colorized optical filtering lamination 220 comprises one second colored filter film 316 and one the 3rd colored filter film 318.Colored filter (C/F) in the pixel under first colored filter film 314 of Fig. 3 B right-hand part is thin film transistor (TFT) 216, second colored filter film 316 of this figure left side then is the C/F in the one other pixel, and two adjacent colored filter film 314 and 316 can be overlapping on data distribution 212 and scan wiring 210 tops.
Afterwards, please refer to Fig. 3 C, form a dielectric layer 322 on base material 202, to cover whole base material 202, wherein the material of dielectric layer 322 for example is acryl (acrylic acid).Then, form a pixel electrode 218 on dielectric layer 322, wherein pixel electrode 218 electrically connects with the drain electrode 308 of thin film transistor (TFT) 216.
Then, please refer to Fig. 3 D, this figure is the constitutional diagram of liquid crystal display panel of thin film transistor, mainly provides base material (thin-film transistor array base-plate 202) configuration of a subtend substrate 204 relative earlier figures 3C, and wherein subtend substrate 204 has shared electrode (common electrode) 222.Afterwards, between subtend substrate 204 and thin-film transistor array base-plate 202, form a liquid crystal layer 340.In addition, can before forming liquid crystal layer 340, on dielectric layer 322, form a light spacer (photo spacer is called for short PS) 326, as the usefulness of keeping cell gap (cell gap).In addition, can comprise an alignment film (not illustrating) between thin-film transistor array base-plate 202 and the liquid crystal layer 340.And can comprise another alignment film (not illustrating) between subtend substrate 204 and the liquid crystal layer 340.In addition, in the outside surface all configurable polaroid (do not illustrate) of thin-film transistor array base-plate 202 with subtend substrate 204.
Moreover, for describing the structure of present embodiment in detail, please also refer to Fig. 3 D and Fig. 4, wherein Fig. 4 is according to the vertical view of the thin-film transistor array base-plate of the first embodiment of the present invention.
Please refer to Fig. 3 D and Fig. 4, colorized optical filtering lamination 220 of the present invention is positioned at thin film transistor (TFT) 216 tops, and the second and the 3rd colored filter film 316,318 wherein is stacked on first colored filter film 314 layer by layer.First colored filter film 314 then is the colored filter as pixel region 214 (asking for an interview Fig. 2), and it has drain electrode 308 electric connections place that an opening 400 exposes pixel electrode 218 and thin film transistor (TFT) 216.In addition, there are one deck second or the 3rd colored filter film 316 or 318 to cover the dot structure of opposite side, and its edge can be overlapping with first colored filter film 314, and this layer second or the 3rd colored filter film 316 or 318 are the colored filters as another pixel region.
Second embodiment
Present embodiment mainly is that the edge of display area (border) at liquid crystal display panel of thin film transistor of the present invention is done improvement, please refer to Fig. 2, but viewing area 500 is meant the zone with pixel region 214 display patterns, color; Otherwise beyond the viewing area 500, that is the part of edge of display area is exactly " non-display area ".
Fig. 5 A to Fig. 5 C is according to the manufacturing process diagrammatic cross-section of the liquid crystal display panel of thin film transistor of one second embodiment of the present invention, the difference of itself and first embodiment is as follows: please be earlier with reference to Fig. 5 A, on base material 202, form and patterned the first metal layer, the member in Fig. 3 A, be formed at a metal level 502 at 500 edges, viewing area in addition.Afterwards, on base material 202, form gate insulator 304, in this only as the usefulness of insulation course.Subsequently, on base material 202, form and the second patterned metal level, the member in Fig. 3 A, also 500 edges form another metal level 506 in the viewing area, and metal level 502 and 506 adjoins each other, and is preferably overlap (shown in Fig. 5 D), to prevent viewing area 500 edge light leaks.In addition, when metal level 502 during as external circuit, it links to each other with scan wiring 210, and 506 of another metal levels are the plan metal levels as line simulator road (dummyline); Otherwise when metal level 506 during as external circuit, it links to each other with data distribution 212, and to intend metal level then be metal level 502.Moreover, metal level 502 all can be simultaneously as intending metal level with metal level 506, be not connected with data wiring 212 with any scan wiring 210, and utilize the adjacency of metal level 502 and metal level 506, even and then overlap (shown in Fig. 5 D), can cover the light of incident non-display area, prevent light leak.
Then, please refer to Fig. 5 B, on base material 202, form protective seam 312.Afterwards, optionally on the base material 202 at 500 edges, viewing area, form at least the colored filter film of one deck and strengthen shaded effect, such as be to be example among this figure to form the colorized optical filtering lamination 220 that is formed on first colored filter film 314 of thin film transistor (TFT) 216 tops as Fig. 2.In addition, this layer colorized optical filtering lamination 220 can also be second colored filter film or the 3rd colored filter film of simple layer.
Then, please refer to Fig. 5 C, on base material 202, form dielectric layer 322, cover colorized optical filtering lamination 220.Afterwards, forming a frame glue 522 on base material 202, is the frame glue with ball sept (ballspacer) for example.Then, provide subtend substrate 204, and the gummed two substrates.
In addition, please pay special attention to, though present embodiment is made colorized optical filtering lamination 220 and adjacency or partly overlapping metal level 502,506 on substrate 202, shown in Fig. 5 A and Fig. 5 D, but in fact as long as produce structure with shading effectiveness at 500 edges, viewing area of the brilliant array base palte of thin-film electro, so aforementioned manufacture craft can be omitted the making of colorized optical filtering lamination 220, and as long as form adjacency or partly overlapping metal level 502,506; Or be to make partly overlapping metal level 502,506, as long as and produce colorized optical filtering lamination 220.
Moreover, for describing the structure of present embodiment in detail, please also refer to Fig. 5 C and Fig. 6, wherein Fig. 6 is according to the vertical view of the edge of display area of the thin-film transistor array base-plate of the second embodiment of the present invention.
Please refer to Fig. 5 C and Fig. 6, the colorized optical filtering lamination 220 of present embodiment is positioned at 500 edges, viewing area, metal level 502 and 506 between colorized optical filtering lamination 220 and base material 202, wherein metal level 502,506 electrically isolated mutually and in abutting connection with or overlap, in order to prevent light leak.In addition, similar to the situation of manufacture craft, the structure division of present embodiment can be chosen in equally 500 edges, viewing area only have colorized optical filtering lamination 220 or only in abutting connection with or have a partly overlapping metal level 502,506.No matter be have only colorized optical filtering lamination 220, have only in abutting connection with or partly overlapping metal level 502,506 or both have concurrently, can reach the effect of shading.
The 3rd embodiment
Present embodiment mainly is to do improvement at the liquid crystal injecting port of the edge of display area of liquid crystal display panel of thin film transistor of the present invention (LC injection hole), please refer to Fig. 2, the position of liquid crystal injecting port 700 is 500 edges in the viewing area, can from here liquid crystal be injected.
Fig. 7 A to Fig. 7 B is according to the manufacturing process diagrammatic cross-section of the liquid crystal display panel of thin film transistor of the third embodiment of the present invention, and itself and second embodiment are roughly the same, its difference be to form in abutting connection with or partly overlapping metal level 502,506 after step.Please earlier with reference to Fig. 7 A, in order to help the injection of liquid crystal, need to reserve bigger bore at liquid crystal injecting port 700, so can form several colorized optical filtering blocks this moment on the base material 202 that liquid crystal injecting port 700 is exposed, strengthen shaded effect, for example be to form adjacent in twos three kinds of colorized optical filtering blocks 314,316,318 in the position of liquid crystal injecting port 700 among this figure, it forms in the lump with colorized optical filtering lamination 314 and colorized optical filtering lamination 220 among second embodiment.
Then, please refer to Fig. 7 B, on base material 202, form dielectric layer 322, cover colorized optical filtering block 314,316,318.Step afterwards is similar to second embodiment.In addition, please pay special attention to, though present embodiment is made colorized optical filtering block 314,316,318 and adjacency or partly overlapping metal level 502,506 on base material 202, as long as have the structure of shading effectiveness in fact.
Moreover, the structure of present embodiment such as Fig. 7 B and shown in Figure 8, wherein Fig. 8 is according to the vertical view of the liquid crystal injecting port of the thin-film transistor array base-plate of the third embodiment of the present invention.Please refer to Fig. 7 B and Fig. 8, the difference of the present embodiment and second embodiment is because liquid crystal injecting port 700 (asking for an interview Fig. 2) need keep bigger space between thin-film transistor array base-plate 202 and subtend substrate 204, inject in order to liquid crystal, so the present invention is designed to colored filter film adjacent in twos block form in the structure of liquid crystal injecting port, to reduce its height, make the distance between dielectric layer 322 and the base material 202 meet the demand that liquid crystal injects.
In addition, similar to manufacture craft, the structure division of present embodiment can select only to have adjacency or partly overlapping metal level 502,506 equally, and omits colored filter film 314,316,318, just can reach shading and the function that prevents light leak.
The 4th embodiment
Present embodiment mainly is that repairing (repair) structure at thin-film transistor array base-plate of the present invention is done improvement.
Fig. 9 A to Fig. 9 C is according to the manufacturing process diagrammatic cross-section of the thin-film transistor array base-plate of the fourth embodiment of the present invention, and it can be worked in coordination with the manufacturing process of first embodiment.Please, on base material 202, form the also the first metal layer of patterning, the member in Fig. 3 A, also have several first repairing metal levels 902 earlier with reference to Fig. 9 A.Step afterwards is identical with first embodiment, forms insulation course 304 on base material 202.Subsequently, on base material 202, form and the second patterned metal level, the member in Fig. 3 A, also form several second repairing metal levels 906, wherein second repair metal level 906 and first and repair the adjacent to each other or overlay configuration of metal level 902 in pixel region (ask for an interview Fig. 2 214), with the composition preparing structure.
Then, please refer to Fig. 9 B, on base material 202, form a protective seam 312, cover second and repair metal level 906 and insulation course 304.Then, can repair in second and form colored filter film 314 and the colorized optical filtering lamination 220 on it in the pixel region in addition of metal level 906 tops, for example the colorized optical filtering lamination 220 in first embodiment is formed on the thin film transistor (TFT) 216.Then, on base material 202, form dielectric layer 322, cover whole base material 202
Subsequently, please refer to Fig. 9 C, definition dielectric layer 322 and protective seam 312 are repaired metal level 906 to form as the opening 910 of the solder joint (welding point) of preparing structure and to expose second.
Afterwards, please refer to Fig. 9 D, form a pixel electrode 218 on dielectric layer 322, it is electrically floated and is disposed at opening 910 surfaces, second repairs metal level 906 with what covering exposed, and as second protective seam of repairing metal level 906.Certainly except the pixel electrode 218 that adopts as the protective seam, also can use other layer replacement.Because the solder joint (being opening 910 places) of preparing structure of the present invention only has a pixel electrode 218 as protective seam to cover thereon; so can not take place knownly because of dielectric layer 322 is arranged on the solder joint, and dielectric layer explosion (burst) phenomenon take place when repairing manufacture craft.
Moreover, for describing the structure of present embodiment in detail, please also refer to Fig. 9 D and Figure 10, wherein Figure 10 is according to the vertical view of the preparing structure of the thin-film transistor array base-plate of the fourth embodiment of the present invention.
Please refer to Fig. 9 D and Figure 10, the difference of the structure of present embodiment and first embodiment is to have second solder joint (the being opening 910 places) top of repairing the preparing structure of the metal level 906 and the first repairing metal level 902 only has a pixel electrode 218 as protective seam to cover thereon.In addition, colored filter film in the present embodiment 314 and 220 of colorized optical filtering laminations are avoided solder joint (the being opening 910 places) configuration of preparing structure.
The 5th embodiment
Figure 11 A to Figure 11 C is according to the manufacturing process diagrammatic cross-section of the reservior capacitor (storage) of the thin-film transistor array base-plate of the fifth embodiment of the present invention, it is similar to the 4th embodiment, difference is to be formed on the base material 202 and the partly overlapping metal level of the first metal layer of patterning, the member in Fig. 3 A, also have several first storage capacitors metal levels 1102, shown in Figure 11 A, wherein the first storage capacitors metal level 1102 has several first openings 1103, and the first storage capacitors metal level 1102 can be that a part of of scan wiring or shared distribution (common line).Step afterwards is identical with the 4th embodiment, forms insulation course 304 on base material 202.Subsequently, on base material 202, form and the second patterned metal level, the member in Fig. 3 A, also form several second storage capacitors metal levels 1106, the second storage capacitors metal level 1106, the first storage capacitors metal level 1102 that wherein overlap each other are formed a reservior capacitor with insulation course 304.
Then, please refer to Figure 11 B, on base material 202, form a protective seam 312, cover the second storage capacitors metal level 1106 and insulation course 304.Afterwards, can on the protective seam 312 outside first opening 1103, form a colored filter film 314,316 or 318.Afterwards, form a dielectric layer 322 on base material 202, colored filter film 314,316 or 318 herein is the colored filter of each pixel region.
Then, please refer to Figure 11 C, definition dielectric layer 322 and protective seam 312 forming one second opening 1110 as contact hole, and expose the second storage capacitors metal level 1106 on first opening 1103.
Then, please refer to Figure 11 D, on dielectric layer 322, form pixel electrode 218, and it electrically connects with the second storage capacitors metal level 1106 by second opening 1110.And, after forming pixel electrode 218, can carry out a welding production technology, be positioned at the pixel electrode 218 and the second storage capacitors metal level 1106 of second opening 1110 with welding.Because one second opening 1110 as contact hole is avoided in 1102 selections of the first storage capacitors metal level, so when pixel electrode 218 and the second storage capacitors metal level 1102 need carry out welding production technology because of loose contact, can avoid the mistake of first and second storage capacitors metal level 1002 and 1006 conductings to take place.
Moreover, for describing the structure of present embodiment in detail, please also refer to Figure 11 D and Figure 12, wherein Figure 12 is according to the vertical view of the reservior capacitor of the thin-film transistor array base-plate of the fifth embodiment of the present invention.
Please refer to Figure 11 D and Figure 12, present embodiment is because the solder joint (be opening 1110 places) of employing as the preparing structure of the 4th embodiment, so can improve by a newly-increased welding production technology, the welding pixel electrode 218 and the second storage capacitors metal level 1106, to solve the problem of both interface loose contacts, to strengthen the effect of reservior capacitor.And the first storage capacitors metal level 1102 is wherein avoided the opening 1110 as contact hole, so when carrying out welding production technology, can avoid the mistake of first and second storage capacitors metal level 1102 and 1106 conductings to take place.
Characteristics of the present invention comprise:
In thin-film transistor array base-plate of the present invention because utilize the colorized optical filtering lamination of storehouse Replace black matrix", so can improve the bit errors because of thin-film transistor array base-plate and subtend substrate The yield that loses.
2. the present invention is at the edge of display area of the thin-film transistor array base-plate colorized optical filtering lamination of can arranging in pairs or groups And adjacency or partly overlapping metal level, so can obtain splendid shaded effect.
3. the present invention adopts at the Liquid crystal pour mouth structure of the edge of display area of thin-film transistor array base-plate With part adjacency or overlapping metal level and the colorized optical filtering block of can arranging in pairs or groups of part, so can obtain splendid Shaded effect also increases the bore of liquid crystal injecting port.
4. the present invention only has a protective layer to be covered in the weldering of the preparing structure of thin-film transistor array base-plate On the point, so can not take place knownly because dielectric layer is arranged on the solder joint, and when repairing manufacture craft, be situated between Electricity layer explosion (burst) phenomenon.
The reservior capacitor structure of colored filter film integrated transistor array base palte of the present invention because of For adopting the solder joint as preparing structure, contact not with the interface of pixel electrode so can improve metal level Good problem, with the effect of reinforcement storage capacitors, and the first metal layer is wherein avoided as contact hole Opening, so when carrying out welding production technology, can avoid the mistake of first and second metal level conducting Mistake takes place.
In sum, the present invention because utilize storehouse the colorized optical filtering lamination replace black matrix", can Significantly to save manufacture craft time and cost. And the present invention is also simultaneously in response to display panels The specific (special) requirements at each position, and improve in manufacture craft and structure, to reach the most time saving and energy saving Effect.

Claims (95)

1. a thin-film transistor array base-plate is characterized in that, comprising:
One base material;
Some scan wirings are configured on this base material;
Some data wirings are configured on this base material, and wherein those data wirings and those scan wirings constitute the plurality of pixels zone;
Several thin film transistor (TFT)s are disposed at the staggered place of those data wirings and those scan wirings, and pass through those data wirings and the control of those scan wirings;
The plurality of pixels electrode is disposed in those pixel regions, and electrically connects with corresponding those thin film transistor (TFT)s respectively;
Several colored filter film are disposed on those pixel regions; And
Several colorized optical filtering laminations are disposed on those colored filter film of those thin film transistor (TFT) tops.
2. thin-film transistor array base-plate as claimed in claim 1 is characterized in that, those colored filter film comprise one first colored filter film.
3. thin-film transistor array base-plate as claimed in claim 2 is characterized in that, those colorized optical filtering laminations comprise one second colored filter film and one the 3rd colored filter film of mutual storehouse.
4. thin-film transistor array base-plate as claimed in claim 2 is characterized in that, those colorized optical filtering laminations comprise one second colored filter film and one the 3rd colored filter film one of them.
5. thin-film transistor array base-plate as claimed in claim 1 is characterized in that, those adjacent colorized optical filterings are stacked on overlay configuration on those scan wirings and those data wirings on those pixel regions.
6. a liquid crystal display panel of thin film transistor is characterized in that, comprising:
One thin-film transistor array base-plate comprises:
One base material;
Some scan wirings are configured on this base material;
Some data wirings are configured on this base material, and wherein those data wirings and those scan wirings constitute the plurality of pixels zone;
Several thin film transistor (TFT)s are disposed at the staggered place of those data wirings and those scan wirings, and pass through those data wirings and the control of those scan wirings;
The plurality of pixels electrode is disposed in those pixel regions, and electrically connects with corresponding those thin film transistor (TFT)s respectively;
Several colored filter film are disposed at those pixel electrode belows; And
Several colorized optical filtering laminations are disposed on those thin film transistor (TFT)s;
One subtend substrate, with respect to this thin-film transistor array base-plate configuration, this subtend substrate has one and shares electrode; And
One liquid crystal layer is between this subtend substrate and this thin-film transistor array base-plate.
7. liquid crystal display panel of thin film transistor as claimed in claim 6 is characterized in that, those colored filter film comprise one first colored filter film.
8. liquid crystal display panel of thin film transistor as claimed in claim 7 is characterized in that, those colorized optical filtering laminations comprise one second colored filter film and one the 3rd colored filter film of mutual storehouse.
9. liquid crystal display panel of thin film transistor as claimed in claim 7 is characterized in that, those colorized optical filtering laminations comprise one second colored filter film and one the 3rd colored filter film one of them.
10. liquid crystal display panel of thin film transistor as claimed in claim 6 is characterized in that, those adjacent colorized optical filterings are stacked on overlay configuration on those scan wirings and those data wirings on those pixel regions.
11. liquid crystal display panel of thin film transistor as claimed in claim 6 is characterized in that, comprises that also a light spacer is between this thin-film transistor array base-plate and this subtend substrate.
12. liquid crystal display panel of thin film transistor as claimed in claim 6 is characterized in that, comprises that also an alignment film is between this thin-film transistor array base-plate and this liquid crystal layer.
13. liquid crystal display panel of thin film transistor as claimed in claim 6 is characterized in that, comprises that also an alignment film is between this subtend substrate and this liquid crystal layer.
14. a thin film transistor pixel structure has the plurality of pixels zone on a base material, it is characterized in that, comprising:
The plurality of pixels electrode is positioned at those pixel regions;
Several thin film transistor (TFT)s are disposed in those pixel regions;
Several leads are disposed at the junction of those pixel regions, and to define those pixel regions, wherein those pixel electrodes and those leads are through those thin film transistor (TFT) electrically connects;
Several first colorized optical filtering laminations are positioned at this pixel region;
Several second colorized optical filtering laminations are positioned on those leads; And
Several the 3rd colorized optical filtering laminations are positioned on those thin film transistor (TFT)s.
15. thin film transistor pixel structure as claimed in claim 14, those first colorized optical filtering laminations be selected from one first colored filter film, one second colored filter film and one the 3rd colored filter film one of them.
16. thin film transistor pixel structure as claimed in claim 14 is characterized in that, those second colorized optical filtering laminations be selected from one first colored filter film, one second colored filter film and one the 3rd colored filter film wherein two.
17. thin film transistor pixel structure as claimed in claim 14 is characterized in that, those the 3rd colorized optical filtering laminations be selected from one first colored filter film, one second colored filter film and one the 3rd colored filter film wherein two.
18. thin film transistor pixel structure as claimed in claim 14 is characterized in that, those the 3rd colorized optical filtering laminations comprise one first colored filter film, one second colored filter film and one the 3rd colored filter film.
19. the method for making of a thin-film transistor array base-plate comprises:
On a base material, form a first metal layer;
This first metal layer of patterning is to form several grids and some scan wirings;
On this base material, form a gate insulator;
On those grids, form a patterning amorphous silicon layer, to form several channel layers;
On this base material, form one second metal level;
This second metal level of patterning, with form several source electrodes, several drain on those grids and form some data distributions on this base material, wherein those data wirings and those scan wirings constitute the plurality of pixels zone, and several thin film transistor (TFT)s are formed in those grids, those channel layers, those source electrodes and those drain electrodes;
In those pixel regions, form several first colored filter film;
Form those first colored filter film that several second colored filter film are covered in those thin film transistor (TFT) tops; And
Form the plurality of pixels electrode on this base material in those pixel regions, those pixel electrodes electrically connect with corresponding those thin film transistor (TFT)s respectively.
20. method for making as claimed in claim 19, it is characterized in that, after forming the step of those first colored filter film of part that those second colored filter film are covered in those thin film transistor (TFT)s top, comprise that also forming several the 3rd colored filter film is covered in those second colored filter film.
21. the method for making of a liquid crystal display panel of thin film transistor comprises:
One thin-film transistor array base-plate is provided;
On this thin-film transistor array base-plate, form a first metal layer;
This first metal layer of patterning is to form several grids and some scan wirings;
On this thin-film transistor array base-plate, form a gate insulator;
On those grids, form a patterning amorphous silicon layer, to form several channel layers;
On this thin-film transistor array base-plate, form one second metal level;
This second metal level of patterning, with form several source electrodes, several drain on those grids and form some data wirings on this thin-film transistor array base-plate, wherein those data wirings and those scan wirings constitute the plurality of pixels zone, and several thin film transistor (TFT)s are formed in those grids, those channel layers, those source electrodes and those drain electrodes;
In those pixel regions, form several first colored filter film;
Form those first colored filter film of part that several second colored filter film are covered in those thin film transistor (TFT) tops;
Form the plurality of pixels electrode on this thin-film transistor array base-plate in those pixel regions, those pixel electrodes electrically connect with corresponding those thin film transistor (TFT)s respectively;
One subtend substrate is provided, and with respect to this thin-film transistor array base-plate configuration, wherein this subtend substrate has a shared electrode; And
Between this subtend substrate and this thin-film transistor array base-plate, form a liquid crystal layer.
22. method for making as claimed in claim 21, it is characterized in that, after forming the step of those first colored filter film of part that those second colored filter film are covered in those thin film transistor (TFT)s top, comprise that also forming several the 3rd colored filter film is covered in those second colored filter film.
23. method for making as claimed in claim 21 is characterized in that, the step of this subtend substrate is provided before, also be included on this thin-film transistor array base-plate and form a light spacer, in order to keep the cell gap of this liquid crystal layer.
24. the method for making of a thin-film transistor array base-plate is characterized in that, comprising:
On a base material, form some scan wirings;
Form some data distributions on this base material, wherein those data wirings and those scan wirings constitute the plurality of pixels zone;
Form several thin film transistor (TFT)s in the staggered place of those data wirings and those scan wirings, and those thin film transistor (TFT)s are by those data wirings and the control of those scan wirings;
Form the plurality of pixels electrode in those pixel regions, those pixel electrodes electrically connect with corresponding those thin film transistor (TFT)s respectively;
On those pixel regions, form several colored filter film; And
On those colored filter film of those thin film transistor (TFT) tops, form several colorized optical filtering laminations.
25. method for making as claimed in claim 24 is characterized in that, those colored filter film comprise one first colored filter film.
26. method for making as claimed in claim 25 is characterized in that, those colorized optical filtering laminations comprise one second colored filter film and one the 3rd colored filter film of mutual storehouse.
27. method for making as claimed in claim 25 is characterized in that, those colorized optical filtering laminations comprise one second colored filter film and one the 3rd colored filter film one of them.
28. method for making as claimed in claim 24 is characterized in that, those adjacent colorized optical filterings are stacked on overlay configuration on those scan wirings and those data wirings on those pixel regions.
29. a thin-film transistor array base-plate comprises a viewing area and a non-display area, it is characterized in that a ring-type colorized optical filtering lamination, is disposed at this non-display area, and around this edge of display area.
30. thin-film transistor array base-plate as claimed in claim 29 is characterized in that also comprising:
Some scan wirings are configured in this viewing area;
Some data wirings are configured in this viewing area, and wherein those data wirings and those scan wirings constitute the plurality of pixels zone;
Several thin film transistor (TFT)s are disposed at the staggered place of those data wirings and those scan wirings, and pass through those data wirings and the control of those scan wirings;
The plurality of pixels electrode is disposed in those pixel regions, and electrically connects with corresponding those thin film transistor (TFT)s respectively; And
Several colored filter film are disposed on those pixel regions.
31. thin-film transistor array base-plate as claimed in claim 30 is characterized in that, those colored filter film extend to this edge, viewing area.
32. thin-film transistor array base-plate as claimed in claim 31 is characterized in that, those colored filter film comprise one first colored filter film.
33. thin-film transistor array base-plate as claimed in claim 32 is characterized in that, this ring-type colorized optical filtering lamination comprises one second colored filter film and one the 3rd colored filter film of mutual storehouse.
34. thin-film transistor array base-plate as claimed in claim 32 is characterized in that, this ring-type colorized optical filtering lamination comprise one second colored filter film and one the 3rd colored filter film one of them.
35. a thin-film transistor array base-plate comprises a viewing area and a non-display area, it is characterized in that:
One the first metal layer is disposed at this edge of display area;
One second metal level is at least in abutting connection with this first metal layer configuration; And
At least one ring-type colored filter film is around this edge of display area configuration.
36. thin-film transistor array base-plate as claimed in claim 35 is characterized in that also comprising:
Some scan wirings are configured in this viewing area;
Some data wirings are configured in this viewing area, and wherein those data wirings and those scan wirings constitute the plurality of pixels zone;
Several thin film transistor (TFT)s are disposed at the staggered place of those data wirings and those scan wirings, and pass through those data wirings and the control of those scan wirings;
The plurality of pixels electrode is disposed in those pixel regions, and electrically connects with corresponding those thin film transistor (TFT)s respectively; And
Several colored filter film are disposed on those pixel regions.
37. thin-film transistor array base-plate as claimed in claim 36 is characterized in that, those colored filter film extend to this edge, viewing area.
38. thin-film transistor array base-plate as claimed in claim 37 is characterized in that, those colored filter film comprise one first colored filter film.
39. thin-film transistor array base-plate as claimed in claim 38 is characterized in that, this at least one ring-type colored filter film comprise one second colored filter film and one the 3rd colored filter film one of them.
40. thin-film transistor array base-plate as claimed in claim 38 is characterized in that, this at least one ring-type colored filter film comprises one second colored filter film and one the 3rd colored filter film of mutual storehouse.
41. thin-film transistor array base-plate as claimed in claim 35 is characterized in that also comprising this second metal level and this first metal layer overlay configuration of part.
42. a light-shielding structure is applicable to it is characterized in that a non-display area of a thin-film transistor array base-plate, comprising:
One the first metal layer is disposed at this non-display area;
One second metal level, with this first metal layer disposed adjacent, wherein this first metal layer and this second metal level are with an insulation course electrical isolation; And
At least one colored filter film, be disposed at this first with this second metal level on.
43. light-shielding structure as claimed in claim 42 is characterized in that, this first metal and this second metal level have an overlapping region, in order to the light leak of avoiding oblique light incident to cause.
44. light-shielding structure as claimed in claim 42 is characterized in that, the setting of floating of this first metal layer.
45. light-shielding structure as claimed in claim 42 is characterized in that, the setting of floating of this second metal level.
46. light-shielding structure as claimed in claim 42 is characterized in that, the one scan distribution of this first metal layer and this thin-film transistor array base-plate electrically connects.
47. light-shielding structure as claimed in claim 42 is characterized in that, one of this second metal level and this thin-film transistor array base-plate data wiring electrically connects.
48. light-shielding structure as claimed in claim 42 is characterized in that, also comprises a colorized optical filtering lamination on this colored filter film.
49. light-shielding structure as claimed in claim 42 is characterized in that, also comprises an insulation course between this colored filter film and this second metal level.
50. the method for making of a thin-film transistor array base-plate is characterized in that, comprising:
Form a first metal layer on a base material, this base material comprises a viewing area and a non-display area;
This first metal layer of patterning is to form several grids and some scan wirings;
On this base material, form a gate insulator;
On those grids, form a patterning amorphous silicon layer, to form several channel layers;
On this base material, form one second metal level;
This second metal level of patterning, with form several source electrodes, several drain on those grids and form some data distributions on this base material, wherein those data wirings and those scan wirings constitute the plurality of pixels zone, and several thin film transistor (TFT)s are formed in those grids, those channel layers, those source electrodes and those drain electrodes;
On this base material, form one first colored filter film;
This first colored filter film of patterning is to keep in those pixel regions and this first colored filter film of the part of this edge of display area;
Form one second colored filter film, be covered in this first colored filter film of part of this edge of display area; And
Form the plurality of pixels electrode on this base material in this viewing area, those pixel electrodes electrically connect with corresponding those thin film transistor (TFT)s respectively.
51. method for making as claimed in claim 50 is characterized in that, form the step of this second colored filter film after, comprise that also forming one the 3rd colored filter film is covered in those second colored filter film.
52. the method for making of a thin-film transistor array base-plate, comprise a base material is provided, this base material comprises a viewing area and a non-display area, it is characterized in that on this base material in this non-display area forming a ring-type colorized optical filtering lamination, this ring-type colorized optical filtering lamination and around this edge of display area.
53. method for making as claimed in claim 52 is characterized in that also comprising:
In this viewing area, form some scan wirings;
Form some data distributions in this viewing area, wherein those data wirings and those scan wirings constitute the plurality of pixels zone;
Form several thin film transistor (TFT)s in the staggered place of those data wirings and those scan wirings, those thin film transistor (TFT)s are by those data wirings and the control of those scan wirings;
Form the plurality of pixels electrode in those pixel regions, those pixel electrodes electrically connect with corresponding those thin film transistor (TFT)s respectively; And
On those pixel regions, form several colored filter film.
54. method for making as claimed in claim 53 is characterized in that, those colored filter film extend to this edge, viewing area.
55. method for making as claimed in claim 54 is characterized in that, those colored filter film comprise one first colored filter film.
56. method for making as claimed in claim 55 is characterized in that, this ring-type colorized optical filtering lamination comprises one second colored filter film and one the 3rd colored filter film of mutual storehouse.
57. method for making as claimed in claim 55 is characterized in that, this ring-type colorized optical filtering lamination comprise one second colored filter film and one the 3rd colored filter film one of them.
58. the method for making of a thin-film transistor array base-plate is characterized in that, comprising:
Form a first metal layer on a base material, this base material comprises a viewing area and a non-display area;
This first metal layer of patterning, to form several grids and some scan wirings in this viewing area, wherein those scan wirings extend to this edge of display area;
On this base material, form a gate insulator;
On those grids, form a patterning amorphous silicon layer, to form several channel layers;
On this base material, form one second metal level;
This second metal level of patterning, on those grids, to form several source electrodes, several drain electrodes, and on this base material, form some data distributions and form some plan metal levels in this edge of display area, wherein those data wirings and those scan wirings constitute the plurality of pixels zone, several thin film transistor (TFT)s are formed in those grids, those channel layers, those source electrodes and those drain electrodes, and those are intended metal level and partly are adjacent to those scan wirings, to prevent this edge of display area light leak;
On this base material, form one first colored filter film;
This first colored filter film of patterning is to keep this first colored filter film of part in those pixel regions and to form one first ring-type colored filter film in this edge of display area; And
Form the plurality of pixels electrode on this base material in this viewing area, those pixel electrodes and those corresponding thin film transistor (TFT)s electric connections.
59. method for making as claimed in claim 58 is characterized in that also comprising those plan metal levels and those scan wiring overlay configuration of part.
60. method for making as claimed in claim 58 is characterized in that, after the step of this first colored filter film of patterning, also comprises forming one second colored filter film, covers this first colored filter film.
61. method for making as claimed in claim 60 is characterized in that, form the step of this second colored filter film after, also comprise forming one the 3rd colored filter film, cover this second colored filter film.
62. the method for making of a thin-film transistor array base-plate is characterized in that, comprising:
Form a first metal layer on a base material, this base material comprises a viewing area and a non-display area;
This first metal layer of patterning is intended metal level to form several grids and some scan wirings and form some in this edge of display area in this viewing area;
On this base material, form a gate insulator;
On those grids, form a patterning amorphous silicon layer, to form several channel layers;
On this base material, form one second metal level;
This second metal level of patterning, on those grids, to form several source electrodes, several drain electrodes, and on this base material, form some data distributions, wherein those data distributions extend to this edge of display area, wherein those data wirings and those scan wirings constitute the plurality of pixels zone, several thin film transistor (TFT)s are formed in those grids, those channel layers, those source electrodes and those drain electrodes, and those intend metal levels and be adjacent to those data distributions at least, to prevent this edge of display area light leak;
On this base material, form one first colored filter film;
This first colored filter film of patterning is to keep this first colored filter film of part in those pixel regions and to form one first ring-type colored filter film in this edge of display area; And
Form the plurality of pixels electrode on this base material in this viewing area, those pixel electrodes and those thin film transistor (TFT)s electrically connect.
63. method for making as claimed in claim 62 is characterized in that, comprises those plan metal levels and those data distribution overlay configuration of part.
64. method for making as claimed in claim 62 is characterized in that, after the step of this first colored filter film of patterning, more comprises forming one second colored filter film, covers this first colored filter film.
65. as the described method for making of claim 64, it is characterized in that, form the step of this second colored filter film after, also comprise forming one the 3rd colored filter film, cover this second colored filter film.
66. the method for making of a thin-film transistor array base-plate comprises providing a base material, this base material to comprise a viewing area and a non-display area, it is characterized in that:
Form several the first metal layers in this edge of display area;
Form several second metal levels on this base material, those second metal levels are at least in abutting connection with those the first metal layers; And
Form at least one ring-type colored filter film around this edge of display area.
67. as the described method for making of claim 66, it is characterized in that, also comprise those second metal levels and this first metal layer overlay configuration of part.
68., it is characterized in that also comprising as the described method for making of claim 66:
In this viewing area, form some scan wirings;
Form some data distributions in this viewing area, wherein those data wirings and those scan wirings constitute the plurality of pixels zone;
Form several thin film transistor (TFT)s in the staggered place of those data wirings and those scan wirings, those thin film transistor (TFT)s are by those data wirings and the control of those scan wirings;
Form the plurality of pixels electrode in those pixel regions, those pixel electrodes electrically connect with corresponding those thin film transistor (TFT)s respectively; And
On those pixel regions, form several colored filter film.
69., it is characterized in that those colored filter film extend to this edge, viewing area as the described method for making of claim 68.
70., it is characterized in that those colored filter film comprise one first colored filter film as the described method for making of claim 69.
71., it is characterized in that this ring-type colorized optical filtering lamination comprises one second colored filter film and one the 3rd colored filter film of mutual storehouse as the described method for making of claim 70.
72. as the described method for making of claim 70, it is characterized in that, this ring-type colorized optical filtering lamination comprise one second colored filter film and one the 3rd colored filter film one of them.
73. a thin-film transistor array base-plate comprises a viewing area and a non-display area, this non-display area has a liquid crystal injecting port, it is characterized in that:
Several the first metal layers are disposed at this non-display area;
Several second metal levels are at least in abutting connection with those the first metal layer configurations;
One colorized optical filtering lamination is disposed at this liquid crystal injecting port this non-display area in addition; And
One first colorized optical filtering block is positioned on this liquid crystal injecting port institute area exposed of this non-display area.
74., it is characterized in that also comprising those second metal levels and this first metal layer overlay configuration of part as the described thin-film transistor array base-plate of claim 73.
75., it is characterized in that also comprising as the described thin-film transistor array base-plate of claim 73:
Some scan wirings are configured in this viewing area;
Some data wirings are configured in this viewing area, and wherein those data wirings and those scan wirings constitute the plurality of pixels zone;
Several thin film transistor (TFT)s are disposed at the staggered place of those data wirings and those scan wirings, and pass through those data wirings and the control of those scan wirings;
The plurality of pixels electrode is disposed in those pixel regions, and electrically connects with corresponding those thin film transistor (TFT)s respectively; And
Several colored filter film are disposed on those pixel regions.
76. as the described thin-film transistor array base-plate of claim 75, it is characterized in that, be positioned on this liquid crystal injecting port institute area exposed of this edge of display area and more comprise one second colorized optical filtering block and this first colorized optical filtering block adjacency.
77. as the described thin-film transistor array base-plate of claim 76, it is characterized in that, be positioned on this liquid crystal injecting port institute area exposed of this edge of display area and more comprise one the 3rd colorized optical filtering block and this second colorized optical filtering block adjacency.
78., it is characterized in that those colored filter film extend to this edge, viewing area as the described thin-film transistor array base-plate of claim 75.
79., it is characterized in that those colored filter film comprise one first colored filter film as the described thin-film transistor array base-plate of claim 78.
80., it is characterized in that this colorized optical filtering lamination comprises one second colored filter film and one the 3rd colored filter film of mutual storehouse as the described thin-film transistor array base-plate of claim 79.
81. as the described thin-film transistor array base-plate of claim 79, it is characterized in that, this colorized optical filtering lamination comprise one second colored filter film and one the 3rd colored filter film one of them.
82. the method for making of a thin-film transistor array base-plate is characterized in that, comprising:
Form a first metal layer on a base material, this base material comprises a viewing area and a non-display area, and wherein this edge of display area has a liquid crystal injecting port;
This first metal layer of patterning, to form several grids and some scan wirings in this viewing area, wherein those scan wirings extend to this liquid crystal injecting port of this edge of display area;
On this base material, form a gate insulator;
On those grids, form a patterning amorphous silicon layer, to form several channel layers;
On this base material, form one second metal level;
This second metal level of patterning, on those grids, to form several source electrodes, several drain electrodes, and in forming some data distributions on this base material and on this base material that this liquid crystal injecting port exposed of this edge of display area, forming some plan metal levels, wherein those data wirings and those scan wirings constitute the plurality of pixels zone, and those are intended metal level and partially overlap those scan wirings, and several thin film transistor (TFT)s are formed in those grids, those channel layers, those source electrodes and those drain electrodes;
On this base material, form a colored filter film;
This colored filter film of patterning is to keep this colored filter film of part in those pixel regions and form one first colorized optical filtering block on this base material that this liquid crystal injecting port was exposed of this edge of display area; And
In this pixel region, form the plurality of pixels electrode, those pixel electrodes and those corresponding thin film transistor (TFT)s electric connections.
83. as the described method for making of claim 82, it is characterized in that, after the step of this colored filter film of patterning, also be included in and form one second colorized optical filtering block on this base material that this liquid crystal injecting port exposed of this edge of display area, adjacent to this first colorized optical filtering block.
84. as the described method for making of claim 83, it is characterized in that, after forming the step of this second colorized optical filtering block, also be included in and form one the 3rd colorized optical filtering block on this base material that this liquid crystal injecting port exposed of this edge of display area, adjacent to this second colorized optical filtering block.
85. the method for making of a thin-film transistor array base-plate is characterized in that, comprising:
Form a first metal layer on a base material, this base material comprises a viewing area and a non-display area, and wherein this edge of display area has a liquid crystal injecting port;
This first metal layer of patterning is intended metal level to form several grids and some scan wirings and form some in this viewing area on this base material that this liquid crystal injecting port was exposed of this edge of display area;
On this base material, form a gate insulator and an amorphous silicon layer;
Remove those grid top this amorphous silicon layers in addition, to form several channel layers;
On this base material, form one second metal level;
This second metal level of patterning, on those grids, to form several source electrodes, several drain electrodes, and on this base material, form some data distributions, those data distributions extend to this liquid crystal injecting port of this edge of display area, wherein those data wirings and those scan wirings constitute the plurality of pixels zone, and those are intended metal level and partially overlap those scan wirings, and several thin film transistor (TFT)s are formed in those grids, those channel layers, those source electrodes and those drain electrodes;
On this base material, form a colored filter film;
This colored filter film of patterning is to keep this colored filter film of part in those pixel regions and form one first colorized optical filtering block on this base material that this liquid crystal injecting port was exposed of this edge of display area; And
In this pixel region, form the plurality of pixels electrode, those pixel electrodes and those corresponding thin film transistor (TFT)s electric connections.
86. as the described method for making of claim 85, it is characterized in that, after the step of this colored filter film of patterning, more be included in and form one second colorized optical filtering block on this base material that this liquid crystal injecting port exposed of this edge of display area, adjacent to this first colorized optical filtering block.
87. as the described method for making of claim 86, it is characterized in that, after forming the step of this second colorized optical filtering block, also be included in and form one the 3rd colorized optical filtering block on this base material that this liquid crystal injecting port exposed of this edge of display area, adjacent to this second colorized optical filtering block.
88. the method for making of a thin-film transistor array base-plate comprises providing a base material, this base material to comprise a viewing area and a non-display area, wherein this non-display area edge has a liquid crystal injecting port, it is characterized in that:
Form several the first metal layers in this edge of display area;
On this base material, form several second metal levels, those second metal levels those the first metal layers of overlapping; And
On this liquid crystal injecting port institute area exposed of this edge of display area, form one first colorized optical filtering block.
89., it is characterized in that also comprising as the described method for making of claim 88:
In this viewing area, form some scan wirings;
Form some data distributions in this viewing area, wherein those data wirings and those scan wirings constitute the plurality of pixels zone;
Form several thin film transistor (TFT)s in the staggered place of those data wirings and those scan wirings, those thin film transistor (TFT)s are by those data wirings and the control of those scan wirings;
Form the plurality of pixels electrode in those pixel regions, those pixel electrodes electrically connect with corresponding those thin film transistor (TFT)s respectively; And
On those pixel regions, form several colored filter film.
90., it is characterized in that those colored filter film extend to this edge, viewing area as the described method for making of claim 89.
91., it is characterized in that those colored filter film comprise one first colored filter film as the described method for making of claim 90.
92. the manufacture method of a thin-film transistor array base-plate is characterized in that, comprising:
On a base material, form a first metal layer;
This first metal layer of patterning is to form some scan wirings, several grids and several first repairing metal levels;
On this base material, form a gate insulator;
On those grids, form a patterning amorphous silicon layer, to form several channel layers;
On this base material, form one second metal level;
This second metal level of patterning, to form several source electrodes, several drain electrodes, some data distributions and several second repairing metal levels, wherein those source electrodes and those drain configuration are in those channel layer both sides of those grid tops, those data wirings and those scan wirings constitute the plurality of pixels zone, and those second repairing metal levels and those first repairing metal levels overlap each other, forming those preparing structures, and several thin film transistor (TFT)s are formed in those grids, those channel layers, those source electrodes and those drain electrodes;
On this first metal layer, this insulation course and this second metal level, form a dielectric layer, wherein this dielectric layer has several repairing opening and several contact windows, and those repairing openings expose those second repairing metal levels of those preparing structures, those source electrodes that those contact windows then expose those thin film transistor (TFT)s;
Form several first colored filter film in those pixel regions beyond those openings;
Form several second colored filter film, be covered in those first colored filter film of part of those thin film transistor (TFT) tops; And
On this base material, form a transparency electrode, this transparency electrode comprises plurality of pixels electrode and several floating electrodes, those pixel electrodes electrically connect with those source electrodes of corresponding those thin film transistor (TFT)s respectively by those contact windows, and those floating electrodes are repaired openings by those and second repaired the metal electric connection with this.
93., it is characterized in that as the described method for making of claim 92, form the step of those second colored filter film, more comprise forming several the 3rd colored filter film, be covered in those second colored filter film of those thin film transistor (TFT) tops.
94. the method for making of a liquid crystal display panel of thin film transistor is characterized in that, comprising:
One thin-film transistor array base-plate is provided;
On this thin-film transistor array base-plate, form a first metal layer;
This first metal layer of patterning is to form some scan wirings, several grids and several first repairing metal levels;
On this thin-film transistor array base-plate, form a gate insulator;
On those grids, form a patterning amorphous silicon layer, to form several channel layers;
On this thin-film transistor array base-plate, form one second metal level;
This second metal level of patterning, to form several source electrodes, several drain electrodes, some data distributions and several second repairing metal levels, wherein those source electrodes and those drain configuration are in those channel layer both sides of those grid tops, those data wirings and those scan wirings constitute the plurality of pixels zone, and those second repairing metal levels and those first repairing metal levels overlap each other, forming those preparing structures, and several thin film transistor (TFT)s are formed in those grids, those channel layers, those source electrodes and those drain electrodes;
On this first metal layer, this insulation course and this second metal level, form a dielectric layer, wherein this dielectric layer has several repairing opening and several contact windows, and those repairing openings expose those second repairing metal levels of those preparing structures, those source electrodes that those contact windows then expose those thin film transistor (TFT)s;
Form several first colored filter film in those pixel regions beyond those openings;
Form several second colored filter film, be covered in those first colored filter film of part of those thin film transistor (TFT) tops;
On this base material, form a transparency electrode, this transparency electrode comprises plurality of pixels electrode and several floating electrodes, those pixel electrodes electrically connect with those source electrodes of corresponding those thin film transistor (TFT)s respectively by those contact windows, and those floating electrodes are repaired openings by those and second repaired the metal electric connection with this;
One subtend substrate is provided, and with respect to this thin-film transistor array base-plate configuration, wherein this subtend substrate has a shared electrode; And
Between this subtend substrate and this thin-film transistor array base-plate, form a liquid crystal layer.
95., it is characterized in that as the described method for making of claim 94, form the step of those second colored filter film, also comprise forming several the 3rd colored filter film, be covered in those second colored filter film of those thin film transistor (TFT) tops.
CNB031500633A 2003-07-31 2003-07-31 Film transistor liquid crystal display panel, its array substrate and mfg. method Expired - Lifetime CN100388102C (en)

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EP1843194A1 (en) 2006-04-06 2007-10-10 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device, semiconductor device, and electronic appliance
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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0990341A (en) * 1995-09-26 1997-04-04 Toshiba Corp Liquid crystal display element
CN1290922A (en) * 1999-09-30 2001-04-11 三星电子株式会社 Film transistor array panel for liquid crystal display and its producing method
JP2002277888A (en) * 2001-03-15 2002-09-25 Dainippon Printing Co Ltd Electrode substrate for liquid crystal display, and its manufacturing method
CN1373390A (en) * 2001-02-28 2002-10-09 株式会社日立制作所 Liquid crystal display
CN1385741A (en) * 2002-06-19 2002-12-18 展茂光电股份有限公司 Structure for LCD of organic luminous material film transistor and making method thereof

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0990341A (en) * 1995-09-26 1997-04-04 Toshiba Corp Liquid crystal display element
CN1290922A (en) * 1999-09-30 2001-04-11 三星电子株式会社 Film transistor array panel for liquid crystal display and its producing method
CN1373390A (en) * 2001-02-28 2002-10-09 株式会社日立制作所 Liquid crystal display
JP2002277888A (en) * 2001-03-15 2002-09-25 Dainippon Printing Co Ltd Electrode substrate for liquid crystal display, and its manufacturing method
CN1385741A (en) * 2002-06-19 2002-12-18 展茂光电股份有限公司 Structure for LCD of organic luminous material film transistor and making method thereof

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