CN100381619C - Semiconductor substrate,semiconductor device,light emitting diode and producing method therefor - Google Patents
Semiconductor substrate,semiconductor device,light emitting diode and producing method therefor Download PDFInfo
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- CN100381619C CN100381619C CNB2004800121458A CN200480012145A CN100381619C CN 100381619 C CN100381619 C CN 100381619C CN B2004800121458 A CNB2004800121458 A CN B2004800121458A CN 200480012145 A CN200480012145 A CN 200480012145A CN 100381619 C CN100381619 C CN 100381619C
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Abstract
A semiconductor substrate including a gallium arsenide layer is obtained by executing a step of preparing a first substrate having a separating layer constituted of germanium and a gallium arsenide layer on the separating layer, a step of preparing a bonded substrate by bonding the first substrate and a second substrate, and a step of dividing the bonded substrate at a portion of the separating layer.
Description
Technical field
The present invention relates to a kind of semiconducter substrate, semiconducter device and luminescent device and manufacture method thereof with gallium arsenide layer.
Background technology
Show high performance as the semiconducter device on the compound semiconductor substrate of gallium arsenide, as the high speed and the luminescent properties of excellence, this is unavailable on silicon.Yet there is defective such as cost an arm and a leg, low mechanical strength, preparation large-sized substrate are difficult in compound semiconductor substrate.
Because these facts, people have attempted at the hetero epitaxy ground growth compound semi-conductor on high mechanical strength and the large-sized silicon substrate that has by obtaining cheaply.For example, Japanese Patent JP3157030,3237889 and 3237890 discloses a kind of method, this method is hetero epitaxy ground growth compound semiconductor layer on the porous silicon layer that is formed on the silicon substrate, then with silicon substrate and another substrate bonding, and utilize etching liquid to remove partial silicon substrate and partially porous silicon layer, thereby obtain large-area compound semiconductor substrate.Japanese Patent JP2877800 also discloses a kind of method, growth compound semiconductor layer on the porous silicon layer that is formed on the silicon substrate, then with silicon substrate and another substrate bonding, and utilize fluid jet stream that porous silicon layer is disconnected and separate bonding after substrate, thereby obtain the compound semiconductor layer substrate.
As being formed with for example example of the semiconducter device of gallium arsenide, figure 24 illustrates the structure of light-emitting diode chip for backlight unit.Structure shown in Figure 24 is stacked n-Al on n-GaAs substrate 51 basically
xGa
1-xAs carrier confining layer 53, n-Al
YGa
1-yAs luminescent layer 54 and n-Al
xGa
1-xAs carrier confining layer 55 constitutes.A kind of p-spreading area 56, insulation layer 58 that forms by local diffusion Zn also is provided, is formed on the metal electrode 59 in the p spreading area and is formed on n side metal electrode 60 on the back side of GaAs substrate 51.The electric current that response is carried between electrode 59 and 60, in p-n junction near interface induction light emission near Zn diffusion front, but because light emission is omnidirectional, therefore a part of light that has only directive to be arranged on the outgoing window on the photodiode upper surface is launched into the outside.
In structure shown in Figure 24, because GaAs substrate 51 can absorb the light of emission, therefore about 85% of the light that produces by 51 absorptions of GaAs substrate.And, because the p side metal electrode 59 that the light emission that produces is formed on the p spreading area 56 during to the outside constitutes shielding, therefore further reduced photoemissive amount in luminescent layer.
For example, the open No.11-168236 of Japanese patent application discloses a kind of light-emitting diode structure, this structure will be by being bonded to another substrate that is different from the substrate that is used for crystal growth by the semiconductor laminated part that compound semiconductor layer constitutes, remove substrate and between semiconductor laminated part and another substrate, provide reflection layer such as metallic membrane from semiconductor laminated part then, can avoid light to be absorbed thus by substrate.
In Japanese Patent No.3157020 for example, in the disclosed manufacture method, form epitaxially deposited layer, make the lattice constant mismatch generation relaxation of silicon and compound semiconductor thus to a certain extent by between silicon and compound semiconductor, inserting porous silicon layer.Yet the crystallinity of the compound semiconductor of acquisition remains not enough, because be not easy to eliminate the mismatch of the lattice parameter of porous silicon and compound semiconductor.And according to the index of desirable compound semiconductor device, the compound semiconductor substrate that obtains by this manufacture method is restricted on its range of application, and can not utilize the advantage of compound semiconductor device fully.
And the disclosed manufacturing method for LED that is used in the open No.11-168236 of Japanese patent application is removed the thick substrate of 300-500 μ m by methods such as grindings from the semiconductor laminated part of several micron thickness.This removing in the method by grinding is difficult to control equably the thickness of semiconductor laminated part, and can not utilizes the advantage of compound semiconductor device fully.
Summary of the invention
Made the present invention in view of the above problems, and the purpose of this invention is to provide a kind of manufacture method that is used for semiconducter substrate, semiconducter device and luminescent device, this method can be utilized the advantage of compound semiconductor device fully and still guarantee economic performance.
Another object of the present invention provides a kind of manufacture method of luminescent device, and this method can be utilized the advantage of compound semiconductor device fully, makes easily, and light can not absorbed and have high light emission efficient by semiconducter substrate.
The manufacture method of semiconducter substrate of the present invention is characterised in that the step of first substrate that comprises the steps: to prepare separating layer with germanium and the gallium arsenide layer on separating layer; The step for preparing bonded substrate by bonding first substrate and second substrate; With in a part of separating layer, separate bonded substrate.
And in the present invention, manufacturing method for LED is characterised in that and may further comprise the steps: the step that forms the porous germanium layer on the semiconducter substrate that is made of germanium; On the porous germanium layer, form the step of a plurality of semiconductor layers that comprise gallium arsenide layer; In semiconductor layer, form the step in light-emitting diodes area under control; In the step that forms the reflecting layer on the light-emitting diodes area under control with on the porous germanium layer, separate the step of semiconducter substrate.
And in the present invention, manufacturing method for LED is characterised in that and may further comprise the steps: the step that forms the porous germanium layer on the semiconducter substrate that is made of germanium; On the porous germanium layer, form the step of a plurality of semiconductor layers that comprise gallium arsenide layer; On a plurality of semiconductor layers, form the step of metal electrode layer; Support substrates is bonded to the step on the surface of metal level; In the step of porous germanium layer punishment every semiconducter substrate; And after separating, the step of formation photodiode in semiconductor layer.
Other advantage of the present invention and feature will be from below in conjunction with can obviously finding out the description of the drawings, and wherein identical reference marker is represented same or analogous parts in the accompanying drawing.
Description of drawings
In conjunction with and the accompanying drawing that constitutes the part of specification sheets represented embodiments of the invention, and be used from specification sheets one and explain principle of the present invention.
Fig. 1 is the synoptic diagram of the manufacture method of the semiconducter substrate in expression the preferred embodiments of the present invention;
Fig. 2 is the synoptic diagram of the manufacture method of the semiconducter substrate in expression the preferred embodiments of the present invention;
Fig. 3 is the synoptic diagram of the manufacture method of the semiconducter substrate in expression the preferred embodiments of the present invention;
Fig. 4 is the synoptic diagram of the manufacture method of the semiconducter substrate in expression the preferred embodiments of the present invention;
Fig. 5 is the synoptic diagram of the manufacture method of the semiconducter substrate in expression the preferred embodiments of the present invention;
Fig. 6 is the synoptic diagram of the manufacture method of the semiconducter substrate in expression the preferred embodiments of the present invention;
Fig. 7 is the synoptic diagram of the manufacture method of the semiconducter substrate in expression the preferred embodiments of the present invention;
Fig. 8 is the synoptic diagram of the manufacture method of the semiconducter device in expression the preferred embodiments of the present invention;
Fig. 9 is the synoptic diagram of the manufacture method of the semiconducter device in expression the preferred embodiments of the present invention;
Figure 10 is the synoptic diagram of the manufacturing method for LED in expression the preferred embodiments of the present invention;
Figure 11 is the synoptic diagram of the manufacturing method for LED in expression the preferred embodiments of the present invention;
Figure 12 is the synoptic diagram of the manufacturing method for LED in expression the preferred embodiments of the present invention;
Figure 13 is the synoptic diagram of the manufacturing method for LED in expression the preferred embodiments of the present invention;
Figure 14 is the synoptic diagram of the light-emitting diode structure in expression the preferred embodiments of the present invention;
Figure 15 is the synoptic diagram of the light-emitting diode structure in expression the preferred embodiments of the present invention;
Figure 16 is the synoptic diagram of the light-emitting diode structure in expression the preferred embodiments of the present invention;
Figure 17 is the synoptic diagram of the light-emitting diode structure in expression the preferred embodiments of the present invention;
Figure 18 is the synoptic diagram of the light-emitting diode structure in expression the preferred embodiments of the present invention;
Figure 19 is the synoptic diagram of the light-emitting diode structure in expression the preferred embodiments of the present invention;
Figure 20 is the synoptic diagram of the light-emitting diode structure in expression the preferred embodiments of the present invention;
Figure 21 is the synoptic diagram of the light-emitting diode structure in expression the preferred embodiments of the present invention;
Figure 22 is the synoptic diagram of the light-emitting diode structure in expression the preferred embodiments of the present invention;
Figure 23 is the synoptic diagram of the light-emitting diode structure in expression the preferred embodiments of the present invention; With
Figure 24 is the synoptic diagram of the light-emitting diode structure of expression prior art;
Embodiment
Introduce the preferred embodiments of the present invention with reference to the accompanying drawings.
Fig. 1-the 7th is used for explaining the synoptic diagram of manufacture method of the semiconducter substrate of the preferred embodiment of the present invention.Step shown in Figure 1 prepares germanium substrate 11.Step shown in Figure 2 then forms separating layer 12 on the surface of germanium substrate 11.Separating layer 12 is preferably by carrying out the porous germanium layer that anodizing forms to the surface of germanium substrate 11.Anodizing for example can be by being provided with anode and negative electrode, carrying out the germanium substrate being set between these electrodes and producing electric current between these electrodes in the electrolytic solution that contains hydrofluoric acid (HF).The porous germanium layer can also be made of the two or more layers with mutually different porosity.
Step shown in Figure 3 forms gallium arsenide layer 13 by epitaxy on the porous germanium layer that constitutes separating layer 12, obtains first substrate 10 thus.The mismatch of the lattice parameter between germanium and the gallium arsenide is very little, and is present in porous germanium layer 12 between germanium and the gallium arsenide and further alleviates and (relaxation) this little mismatch of lattice parameter, thereby can form satisfied crystalline gallium arsenide layer 13 on germanium substrate 11.And epitaxy allows to form the gallium arsenide layer with uniform thickness.
Step shown in Figure 4 is bonded to second substrate 20 on the surface of first substrate 10, as shown in Figure 3, forms bonded substrate 30 thus.As second substrate 20, can adopt silicon substrate usually or carry insulation layer such as SiO in its surface
2Substrate.Second substrate 20 can also be another substrate, and insulating substrate for example is as glass substrate.
Step shown in Figure 5 disconnects bonded substrate 30 on the part of separating layer 12, be divided into two substrates thus.This separation can for example utilize fluid to carry out.As utilizing the fluidic method, can advantageously utilize for example to form jet (liquid or gas) and it is ejected into method in the separating layer 12, perhaps utilize the method for the static pressure of liquid.In preceding kind of method, utilize water to be called as water spray means as the fluidic method.Above-mentioned separation can also realize by applying thermal treatment for bonded substrate 30.Above-mentioned separation further can realize by solid components such as chock are inserted in the separating layer 12.
Step shown in Figure 6 utilizes etching liquid etc. to remove separating layer 12b on the gallium arsenide layer 13 of staying second substrate 20.In this operation, gallium arsenide layer 13 can be used as etching stop layer.Afterwards, if necessary, can carry out complanation by planarization steps such as hydrogen annealing step or polishing step.
By above-mentioned technology, obtain semiconducter substrate 40 as shown in Figure 7.Semiconducter substrate 40 shown in Figure 7 has thin gallium arsenide layer 13 from the teeth outwards.Thin gallium arsenide layer 13 means that it is thinner than general semiconducter substrate, and should preferably have for example thickness in the scope of 5nm-5 μ m by thin gallium arsenide layer 13, so that show the advantage of semiconducter device.And, according to the index of semiconducter device, can on gallium arsenide (GaAs) layer 13, form another compound semiconductor layer as AlGaAs, GaP, InP or InAs.
And after the separation in step shown in Figure 5, utilize etching liquid to remove to stay the separating layer 12a on the germanium substrate 11.The germanium substrate can for example carry out surface planarization by hydrogen annealing step or polishing step to be handled, and can be reused as the germanium substrate 11 in the step shown in Figure 1.This repeated use of germanium substrate 11 can reduce the manufacturing cost of semiconducter substrate greatly.
As mentioned above, manufacture method of the present invention can obtain to have the semiconducter substrate of homogeneous film thickness and satisfied crystalline gallium arsenide layer.And manufacture method of the present invention can significantly reduce the manufacturing cost of the semiconducter substrate with gallium arsenide layer.
Figure 10-the 17th is used to explain the synoptic diagram of manufacturing method for LED according to the preferred embodiment of the invention.
At first, as shown in figure 10, on germanium substrate 101, form the porous germanium layer by anodizing.The porous germanium layer has bilayer structure, and at first forms the porous germanium layer 103 of low porosity, forms the porous germanium layer 102 of Higher porosity then.In this way, help making the airtight next step of aperture, and stress concentration is at two porous germanium layers at the interface being present in before the epitaxy on the substrate, thus separating Ge substrate 101 smoothly.
Then, high-temperature hydrogen anneal and utilize GeH
4, GeCl
4Make and exist the lip-deep aperture of porous germanium layer airtight Deng CVD technology, thereby on the surface of the porous germanium that constitutes substrate, form satisfied crystal surface as unstripped gas, and extension ground growing single-crystal germanium layer 104, n-GaAs layer 105, n-Al successively
xGa
1-xAs layer 106, n-Al
yGa
1-yAs layer 107, n-Al
xGa
1-xAs layer 108, n-GaAs layer 109 (y＜x), as shown in figure 11.
Growth GaAs layer is a heteroepitaxial growth on germanium layer, but defect level that also can be extremely low obtains GaAs layer and AlGaAs layer, because the lattice parameter of germaniumcrystal 5.64613 is in close proximity to GaAs crystalline lattice parameter 5.6533.The impurity concentration of epitaxially grown layer and thickness depend on the design of device, but impurity concentration is approximately 10E17/cm
3, and thickness is about 2-3 μ m.
Then, as shown in figure 12, in this epitaxial film, form photodiode by semiconductor technology.In the summary of semiconductor technology, thermodiffusion Zn optionally, thereby with a part of n-Al
yGa
1-yAs layer 107, n-Al
xGa
1-xAs floor 108 and n-GaAs floor 109 convert p-district 111 to.Remove n-GaAs layer 109, do not comprise the zone that is converted into the p type, form SiN insulation layer 110 then and form metal electrode 112.
Then, as shown in figure 13, handle substrate is bonded on the surface of metal electrode 112 with peelable adhesive tape (not shown), and make the High-Pressure Water W (water spray) that aggregates into thread be ejected into porous layer 102 and 103 near.Because the big stress of existence at the interface in porous layer 102 and 103 under the injection of High-Pressure Water, is easy to the separate substrate at the interface in two porous germanium layers 102 and 103.This substrate separation method is excellent aspect reliability.
After separating Ge substrate 101, remove and be retained in lip-deep porous germanium layer 103 by etching, and porous layer and epitaxial film reproducibly realized etching stopping at the interface, this is because porous layer has low density and presents very high etching rate.Afterwards, by etched portions remove germanium layer 104 and (if necessary) removes GaAs epitaxial film 105, as shown in figure 14, and form n side metal electrode 114, do not comprise luminescence window.
In this technology, after forming the light-emitting diodes area under control, separating Ge substrate 101, but also separating Ge substrate 101 at first form the light-emitting diodes area under control then.As shown in figure 17, it also is very effective providing light absorbing zone 209 for the light that absorbs the outside that is not transmitted into photodiode near p side metal electrode 12.Light absorbing zone 209 also can form by partly staying n-GaAs layer 109, and is favourable removing stray light, leak in the zone of control light beyond the luminous zone and obtaining aspect the light of convergency excellence.
Under the situation that improves radiative directivity, on luminescence window as shown in figure 15, form moulded lens 115, and owing to moulded lens 115 forms in the plane, so these lens can obtain uniform properties.
Then, be separated into light-emitting diode chip for backlight unit or light emitting diode matrix.Can use slitting saw to be used for this separation, but utilize laser apparatus or separate and also be fine, because this structure is very thin by spreading chip that (creeping) carry out.This method has not only reduced and has been used for the isolating area of chip, and can carry out highly precisely that chip separates, and has improved the alignment precision in the application that needs chip array thus greatly.
At last, peel off light-emitting diode chip for backlight unit or light emitting diode matrix from handle substrate 113.Afterwards, light-emitting diode chip for backlight unit or light emitting diode matrix tube core are joined on the desirable mounting bracket.Figure 16 is the sectional view under the situation of light-emitting diode chip for backlight unit under the state after lock out operation substrate 113.
Under the situation of light emitting diode array chips with thin space, can directly join in the lead-in wire wiring 117 or relay wiring graphic boards (not shown) of driver IC 16, as shown in figure 16, thereby realized that the thin space that is difficult to realize by the line bonding connects up.Because the electrical connection of being undertaken by Direct Bonding comes the clean metal surface by for example argon sputter and undertaken by directly contact under pressure, so can realize the wiring connection of thin space, and do not need with the line bonding in pad size.And this structure presents satisfied thermal radiation and excellent temperature stability, this be because luminous component near heat sink or heat radiation substrate setting.
And, remove and be retained in after this lip-deep porous germanium layer 102, can for example make isolating germanium substrate 101 return to initial surface, and reuse the ratio that germanium substrate 101 has significantly reduced substrate cost in manufacturing cost by polishing.
And, because the germanium substrate has than the higher hardness of GaAs substrate and is made for large size, therefore by using the substrate higher also can reduce manufacturing cost than GaAs substrate.In the present embodiment, separating Ge substrate 101 after photodiode technology, but also can after separating Ge substrate 101, carry out photodiode technology.
In the present invention, on the germanium substrate, form after the porous layer, complanation is carried out on this surface, and the stacked a plurality of GaAs layers that comprise luminescent layer.Afterwards, form photodiode, and on the position of porous layer the separating semiconductor substrate.In this way, needn't remove the substrate of hundreds of micron thickness by polishing or etching, and, therefore can optionally remove porous layer individually with reproducibility by etching because the porous germanium layer that is retained on laminated semiconductor layer one side is several microns etching rates that approach and have than the big several numerals of crystallization germanium.
Then, after removing porous layer, on this surface, form in the step of luminescence window, electrode and photodiode, on this surface, form the speculum partly be used as electrode, also can be reflected and be transmitted into the outside to the light of the planar transmit opposite thus with luminescence window one side.Therefore, the light-emitting diode structure that absorbed by semiconducter substrate can be realized to avoid at an easy rate, luminous efficiency can be improved significantly thus.And, suitably be provided for absorbing the absorption piece of the light that is not transmitted into outside photodiode, thereby reduce stray light or irradiation leakage, realize photodiode thus with satisfied controllability.
According to the present invention, passing porous layer forms light bar led and can exempt the etching stopping technology in the etching stopping of carrying out at the interface of substrate of making the laminated semiconductor layer from partially porous layer separate substrate on the surface of semiconducter substrate, perhaps exempt the selective etching technology of the etching rate of the low several numerals of utilization in the laminated semiconductor layer, thereby measure easily.And, be easy to realize wherein also making the structure that is reflected towards the light of the side emission opposite, and can realize significantly improving of luminous efficiency by the light emitting diode construction that can avoid being absorbed by semiconducter substrate with luminescence window.
[example]
Explained later example of the present invention.
(example 1)
At first, preparation is the P type Ge substrate 11 of 0.01 Ω cm than resistivity.Then, in anodizing liquid, Ge substrate 11 is carried out anodizing, thereby form porous Ge layer as separating layer 12.The anodizing condition is as follows:
Current density: 6 (mA/cm
2)
Anodizing liquid: HF: H
2O: C
2H
5OH=1: 1: 1
Cycle: 11 (minute)
The thickness of porous Ge: 12 μ m.
The concentration of current density and anodizing liquid can be suitably changes according to the thickness and the structure of the separating layer (porous Ge layer) 12 that will form.Current density is preferably at 0.5-700mA/cm
2In the scope, the concentration of anodizing liquid is preferably in 1: 10: 10 to 1: 0: 0 scope.
Porous Ge layer is as being used for forming the relaxed layer of high quality extension GaAs layer thereon and being effective as separating layer.
Anodizing liquid can be the solution that contains HF, and can not have ethanol.Yet, preferably the ethanol of removing the bubble that produces from substrate surface is effectively added to the anodizing liquid.Having this chemical substance of removing the bubble function can also be for example another kind of alcohol except ethanol, as methyl alcohol or Virahol, or tensio-active agent.Replace to add this chemical substance, it also is effective that the vibration by for example ultrasonic vibration discharges bubble from substrate surface.
Then, by MOCVD (Organometallic chemical vapor deposition) technology growth 0.3 μ m thick GaAs layer 13 in extension ground on porous Ge layer, thereby obtain first substrate 10.Growth conditions is as follows:
Source gas: Ga (CH
3)
3/ AsH
3
Temperature: 600 ℃
The speed of growth: 0.05 μ m/min.
These growth conditionss can suitably change according to the index of required GaAs layer 13.
Then, with second substrate 20 surperficial stacked of preparation respectively and contact the surface of first substrate 10, and under 800 ℃, carry out 5 minutes thermal treatment, thereby increase the bond strength of first substrate 10 and second substrate 20.Therefore obtain bonded substrate 30.
Then, on the direction of the bonded interface that is parallel to bonded substrate 30, from the diameter of waterworks is that the nozzle of 0.1mm is purified waste water to the high pressure of the gap of bonded substrate 30 peripheries (chamfered portion by two substrates 10,20 forms) injection 50MPa pressure, thereby bonded substrate 30 is disconnected, thus bonded substrate 30 is separated into two substrates.This operation in, the pressure of purifying waste water preferably from several to 100MPa.
In this separate steps, can (1) according to scanning move mode moving nozzle, move along the gap that forms by chamfered portion thereby make from the injection stream that forms of purifying waste water of nozzle ejection, perhaps (2) are by utilizing wafer holder to clamp to fix and rotating bonded substrate, be ejected in the gap that on the whole periphery of bonded substrate, forms purifying waste water, perhaps (3) combined method (1) and (2) by chamfered portion.
The result is, becomes extension GaAs layer 13 on first substrate 10 and a part of 12a of porous Ge layer 12 to be sent to second substrate 20 initial landform.Porous Ge layer 12a is retained on the surface of Ge substrate 11 by oneself.
Replacement is separated (separation) bonded substrate by water spray means, can also utilize gas injection, solid-state chock be inserted in the separating layer of bonded substrate, mechanical force such as tension force or shearing force are put on bonded substrate, ultrasonic wave is put on bonded substrate or adopts other method.
Then, by containing at least 49% hydrofluoric acid (HF), 30% hydrogen peroxide (H
2O
2) and water (H
2O) etching liquid optionally etches away the porous Ge layer 12b of the outmost surface that is sent to second substrate 20.Stay GeAs layer 13 and be not etched, remove porous Ge layer 12b by selective etching simultaneously.In selective etching, under the condition that applies ultrasonic wave and rotation substrate off and on, can suppress the uneven distribution of the etching in the substrate plane and between the substrate by the etching operation of utilizing etching device, wherein said etching device is provided with the circulator of the etching solution that is used to circulate.And interpolation alcohol or tensio-active agent can suppress the inhomogeneous etching by the surface bonding generation of the bubble that produces in reaction in etching liquid.
By above-mentioned technology, on this surface, obtain to have the semiconducter substrate of the thick GaAs layer 13 of 0.3 μ m.
And can in GaAs layer 13, not change by selective etching porous Ge layer.The thickness of the GaAs layer 13 of the formation like this of measuring on whole lip-deep 100 points shows that homogeneity is 301 ± 4nm.
Be sure of that by the cross section that transmission electron microscope is watched the GaAs layer keeps satisfied crystallinity.
Further under 600 ℃, in hydrogen, heat-treated 1 hour, and assess the surfaceness of GaAs layer 13 by atomic force microscope.Average square roughness in the square area of 50 μ m is approximately 0.2nm, can compare with commercially available common Si wafer.Can be by polishing operation such as CMP, replace hydrogen annealing and carry out surface planarization.
As the pre-treatment that is used for the bonding step,, carry out Cement Composite Treated by Plasma first substrate that will connect and second substrate lip-deep at least one and can increase bond strength even under stress relief annealed situation.After the Cement Composite Treated by Plasma, preferably use the processed substrate of water rinse.
In separate steps, can also in turn separate a plurality of bonded substrate by a plurality of bonded substrate being set along its surface direction and moving the nozzle of waterworks according to the scanning motion mode along this direction.
In addition, a plurality of bonded substrate can be set on the direction perpendicular to its surface direction, and move the nozzle of waterworks, thereby, automatically separate a plurality of bonded substrate thus in turn to a plurality of bonded substrate water sprays according to X-Y scanning motion mode.
After the separate steps, Ge substrate 11 is kept the operation of removing of thereon porous Ge layer 12a, carry out planarization process then and reuse the preparation of first substrate, reduced the manufacturing cost of semiconducter substrate thus.This repetition that utilizes again can significantly reduce the manufacturing cost of semiconducter substrate.
(example 2)
This example is the development form of example 1 and the manufacture method that a kind of semiconducter device is provided.At first, the same way as shown in the Fig. 1 and 2 in utilization and the example 1 forms porous Ge layer 22 on Ge substrate 21.
Then, as shown in Figure 8, extension ground growth n-GaAs layer 23 on porous Ge layer 22, then on n-GaAs layer 23 successively epitaxy as the n-AlGaAs layer 24 of n covering, as the GaAs layer 25 of active layer with as the AlGaAs layer 26 of p-covering, thereby form laser structure 50.
Then, utilize the same way as shown in Figure 4 with example 1, with the surperficial stacked of the p-AlGaAs layer 26 of laser structure 50 and be bonded on the surface of substrate 20 of other preparation.Although not shown, electrode is formed on the substrate 20, and is electrically connected with p-AlGaAs layer 26.Porous Ge layer with huge surface area has removes the removal of impurities function of for example moving to the impurity this device in its manufacturing process from producing apparatus, and wherein above-mentioned impurity can influence device performance nocuously.
Same way as shown in Figure 5 in utilization and the example 1 is separated into two with bonded substrate then.
Afterwards, utilization is removed porous Ge layer with the same way as shown in Fig. 6 and 7 in the example 1.In this way, laser structure 50 (n-GaAs/n-AlGaAs/GaAs/p-AlGaAs) is transferred on the substrate 20, as shown in Figure 9.Although not shown, on n-GaAs layer 23, form electrode, thereby can be electrically connected.
Example 2 can be made the semiconductor laser of double-heterostructure.
(example 3)
In example 3, at first on germanium substrate 101, form two porous germanium layers 102,103, as shown in figure 10 by anodizing.Because the porous layer that forms by anodizing forms from the surface, therefore at first form the porous germanium layer 103 that has than low porosity, form the porous germanium layer that has than macroporsity then.This technology can so that outside before the epitaxial growth sealing be present in the carrying out of the next step of lip-deep aperture, and can be in step afterwards separating Ge substrate 101 smoothly.
Subsequently, high-temperature hydrogen anneal and utilize GeH
4, GeCl
4Be present in the lip-deep aperture of porous germanium layer Deng having sealed, thereby on the surface of porous germanium, form satisfied crystal surface as the CVD technology of unstripped gas, and extension ground growing single-crystal germanium layer 104, n-GaAs layer 105, n-Al successively
xGa
1-xAs layer 106, n-Al
yGa
1-yAs layer 107, n-Al
xGa
1-xAs layer 108, n-GaAs layer 109 (y＜x), as shown in figure 11.
The thickness of impurity concentration and epitaxially grown layer depends on the design of device, but the typical structure that adopts in example 3 is as follows:
Monocrystalline germanium layer 104:0.1-0.5 μ m; There is not doping impurity
N-GaAs layer 105:0.05-0.55 μ m; Si mixes
N-Al
0.35Ga
0.65As layer 106: about 1 μ m; Si mixes
N-Al
0.13Ga
0.87As layer 107: about 0.5 μ m; Si mixes
N-Al
0.35Ga
0.65As layer 108: about 1 μ m; Si mixes
N-GaAs layer 109:0.1-0.5 μ m; Si mixes.
Si mix be so carry out so that obtain 10
17/ cm
3Carrier concentration.
Then, as shown in figure 12, in these epitaxial films, form the light-emitting diodes area under control of flat luminous type by semiconductor processes.In the summary of semiconductor technology, on whole surface, form the insulation layer (not shown), and be formed for the window of Zn diffusion by photoetching and dry etching therein by sputter.Then, utilize sputter to form the ZnSiO film that constitutes Zn diffuse source, and in Zn diffusion window oral region, carry out thermodiffusion, thereby with n-Al
yGa
1-yAs layer 107, n-Al
xGa
1-xAs floor 108 and n-GaAs floor 109 convert p district 111 to.Remove the insulation layer that constitutes the diffusion mask (not shown), form insulation layer 110 subsequently and form Cr/Au metallic membrane 112 as electrode/speculum.
Afterwards, as shown in figure 13, handle substrate 113 is bonded on the surface of metallic membrane 112, and be converged to the High-Pressure Water (water spray) of thread near the injection of porous layer 102 and 103 with peelable adhesive tape (not shown).Since the big stress of existence at the interface in porous layer 102 and 103, under the injection of High-Pressure Water W, can be in the separate substrate at the interface of two porous germanium layers.This substrate separation method is excellent in the reliability direction.
As peelable adhesive tape, adopt under uviolizing by at bonding interface place generation gas and can be from peel-away type.
After separating Ge substrate 101, remove and stay lip-deep porous germanium layer 103 by etching because porous layer has low density and presents very high etching rate, therefore again terrain in the realization etching stopping at the interface of porous layer and epitaxial film.
Afterwards, by etched portions remove germanium layer 104 and (if necessary) removes GaAs epitaxial film 105, as shown in Figure 4, and form n side metal electrode AuGe/Au 114, do not comprise a part of luminescence window.
Under the situation that improves radiative directivity, on luminescence window as shown in figure 15, form moulded lens 115, and owing to moulded lens 115 forms in the plane, so these lens can obtain uniform properties.
Then, separate to form light emitting diode array chips (or light-emitting diode chip for backlight unit).Because this structure is very thin, therefore can carry out the chip separation by spreading, thus the variation that reduces to be used for the isolating area of chip and significantly reduce chip size.
At last, peel off light emitting diode array chips (or light-emitting diode chip for backlight unit) by uviolizing from handle substrate 113, and be bonded directly to it in lead-in wire wiring 117 of uniform distances of driver IC 16 or on the relay board of supports cloth line graph (not shown), the view of Figure 14 flip vertical (its expression with) as shown in figure 16.In this operation,, high alignment precision and the thin space wiring that is difficult to realize by the line bonding have therefore been realized because chip has very high tolerance range.Therefore, for example be used under the situation of photodiode printhead, can realize being used for aiming at the array of linear array light emitting diode array chips accurately and install in the light emitting diode array chips of example 3.
(example 4)
Opposite with the example 3 of separating Ge substrate 101 after the photodiode technology, example 4 is to carry out photodiode technology after separating Ge substrate 101, and identical in each step and the example 3.Below will to the difference principle be introduced.
At first, on germanium substrate 1, form porous germanium layer 102,103, as shown in figure 18, epitaxy monocrystalline germanium layer 104, n-GaAs layer 105, n-Al successively in its surface then
xGa
1-xAs layer 106, n-Al
yGa
1-yAs layer 107, n-Al
xGa
1-xAs layer 108 and n-GaAs layer 109 (y＜x).Identical in every layer impurity concentration and thickness and the example 3.
Subsequently, as shown in figure 18, on the upper space, form n side metal electrode layer 201, and second substrate 203 is bonded on it.For the process resistance after keeping, under pressure and heating, metal electrode layer 201 and second substrate 203 carried out surface cleaning after, undertaken bonding by the Direct Bonding of contact.
Then, as shown in figure 19, near porous layer 102 and 103, spray be focused into thread High-Pressure Water W (water spray) thus at the germanium of the separation at the interface substrate 101 of porous germanium layer 102 and 103.
Then, separate germanium substrate 101 and remove lip-deep monocrystalline germanium layer 104 afterwards, and form flat luminous type photodiode, as shown in figure 20 by semiconductor technology.Remove porous layer germanium surface afterwards and have surfaceness, this is because the influence of porous layer causes, but the GaAs surface after etching is removed germanium layer has excellent planarity, can carry out fine processing.Identical in the technology that is used to form planar transmit type photodiode and the example 3, but because Zn spreading area 111 constitutes luminescence windows, so p side metal electrode 112 forms as small as possible, thus minimizing is used for the masked segment of the light of photodiode.Utilize slitting saw that this structure is separated into light emitting diode array chips with second substrate 203 afterwards, finished the structure of light emitting diode array chips thus, as shown in figure 21.
Afterwards, as shown in figure 22, bonding a kind of to wavelength of transmitted light be transparent substrate as second substrate 203, and in electrode layer 201, form luminescence window 202, thereby obtain by the radiative light emitting diode matrix of transparent substrate, as shown in figure 23.Electrode layer 201 also can be made of transparent material.
Can also be by from structure shown in Figure 22, separating the structure that second substrate 203 (needing not be transparent in this case) is realized light emitting diode matrix as shown in figure 16.
Because but therefore the function of the metal electrode 201 cremasteric reflex mirrors in the example 4 can utilize reflected light by partly removing n-GaAs layer 109.Also can not be transmitted into outside stray light etc., as shown in figure 17 by near metal electrode, providing absorption layer 209 to remove.
In example 4,, therefore do not need to be used to provide the measure of porous germanium layer, and can directly use common photodiode technology with process resistance owing in photodiode technology, there is not the porous germanium layer.
As previously mentioned, light bar led of the present invention or light bar led array can be advantageously used in the photodiode printhead and (will be installed in the printer).In addition, the present invention for example can advantageously be applied to by bidimensional the display unit that light bar led (light bar led array) constitutes is set.
(other)
In being used to form the epitaxial growth steps of gallium arsenide layer, various film formation technology such as MBE method have been used.
In the selective etching step that is used for separating the layer (porous layer, ion implanted layer etc.) that stays after the separation operation, except the said mixture of 49% hydrofluoric acid, 30% hydrogen peroxide and water, can adopt various etching liquids (for example, the mixture of hydrofluoric acid, nitric acid and acetate).
Owing under the situation that does not break away from the spirit and scope of the present invention, can make any tangible various embodiment of the present invention, should be appreciated that to the invention is not restricted to its specific embodiment, and only limit by claim.
Claims (17)
1. manufacturing method for LED comprises:
The step of preparation porous germanium layer on the semiconducter substrate that constitutes by germanium;
On described porous germanium layer, form the step of a plurality of semiconductor layers that comprise gallium arsenide layer;
In described semiconductor layer, form the step in light-emitting diodes area under control;
On described light-emitting diodes area under control, form the step in reflecting layer; With
The step of separating described semiconducter substrate at described porous germanium layer place.
2. according to the manufacturing method for LED of claim 1, also comprise:
After described separating step, form the step of electrode.
3. according to the manufacturing method for LED of claim 1, also comprise:
After described separating step, form the step of luminescence window.
4. according to the manufacturing method for LED of claim 1, constitute by AlGaAs semi-conductor with different al component comprising described a plurality of semiconductor layers of gallium arsenide layer.
5. according to the manufacturing method for LED of claim 1, wherein said reflecting layer is made of metal level, and partly is used as metal electrode.
6. according to the manufacturing method for LED of claim 1, wherein between described reflecting layer and semiconductor layer, insulation layer is set, and between described insulation layer and described semiconductor layer, is provided for partly reducing the absorption layer of luminous reflectance.
7. according to the manufacturing method for LED of claim 1, wherein the emission side at described photodiode forms electrode, makes this electrodes surrounding luminescence window, and forms the light absorbing zone that contacts with semiconductor layer on the surface of described electrode.
8. manufacturing method for LED comprises:
The step of preparation porous germanium layer on the semiconducter substrate that constitutes by germanium;
On described porous germanium layer, form the step of a plurality of semiconductor layers that comprise gallium arsenide layer;
In the superiors of described a plurality of semiconductor layers, form the step of metal electrode layer;
Support substrates is bonded to the lip-deep step of described metal level;
The step of separating described semiconducter substrate at porous germanium layer place; With
After separating, the step in formation light-emitting diodes area under control in described semiconductor layer.
9. manufacturing method for LED according to Claim 8 is made of the AlGaAs semi-conductor with different al component comprising described a plurality of semiconductor layers of gallium arsenide layer.
10. manufacturing method for LED according to Claim 8, wherein said metal electrode layer has the function of speculum.
11. manufacturing method for LED according to Claim 8, wherein said support substrates are only transparent to what launched, and the corresponding luminous zone of described metal electrode layer and partly being removed.
12. manufacturing method for LED according to Claim 8, the absorption layer that wherein is used for partly reducing luminous reflectance is arranged between described metal electrode layer and the described semiconductor layer.
13. photodiode that utilizes each the method for manufacturing light-emitting among claim 1-7 and the claim 8-12 to make.
14. light emitting diode matrix that utilizes each the method for manufacturing light-emitting among claim 1-7 and the claim 8-12 to make.
15. one kind by being provided with according to the photodiode of claim 13 or the display unit that constitutes according to the light emitting diode matrix of claim 14.
16. one kind by being provided with according to the photodiode of claim 13 or the printhead that constitutes according to the light emitting diode matrix of claim 14.
17. printer that comprises the printhead of claim 16.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP127999/2003 | 2003-05-06 | ||
| JP2003127999A JP2004331438A (en) | 2003-05-06 | 2003-05-06 | Semiconductor substrate and its manufacturing method |
| JP359348/2003 | 2003-10-20 |
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| CN1784515A CN1784515A (en) | 2006-06-07 |
| CN100381619C true CN100381619C (en) | 2008-04-16 |
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| CN (1) | CN100381619C (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5811348A (en) * | 1995-02-02 | 1998-09-22 | Sony Corporation | Method for separating a device-forming layer from a base body |
| JPH10326884A (en) * | 1997-03-26 | 1998-12-08 | Canon Inc | Semiconductor substrate, its manufacture and its composite member |
| US6326279B1 (en) * | 1999-03-26 | 2001-12-04 | Canon Kabushiki Kaisha | Process for producing semiconductor article |
-
2003
- 2003-05-06 JP JP2003127999A patent/JP2004331438A/en active Pending
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5811348A (en) * | 1995-02-02 | 1998-09-22 | Sony Corporation | Method for separating a device-forming layer from a base body |
| JPH10326884A (en) * | 1997-03-26 | 1998-12-08 | Canon Inc | Semiconductor substrate, its manufacture and its composite member |
| US6326279B1 (en) * | 1999-03-26 | 2001-12-04 | Canon Kabushiki Kaisha | Process for producing semiconductor article |
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| Publication number | Publication date |
|---|---|
| JP2004331438A (en) | 2004-11-25 |
| CN1784515A (en) | 2006-06-07 |
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