CN100379037C - Light-emitting diode structure - Google Patents
Light-emitting diode structure Download PDFInfo
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- CN100379037C CN100379037C CNB2004100001481A CN200410000148A CN100379037C CN 100379037 C CN100379037 C CN 100379037C CN B2004100001481 A CNB2004100001481 A CN B2004100001481A CN 200410000148 A CN200410000148 A CN 200410000148A CN 100379037 C CN100379037 C CN 100379037C
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Abstract
The present invention relates to the structure of a light emitting diode, which comprises one substrate, one n type first bound layer, one first n type electrode, one first active layer, one p type second bound layer, one tunneling layer, one n type third bound layer, one second n type electrode, one second active layer, one p type fourth bound layer and a p type third electrode, wherein the n type first bound layer is formed on the substrate, the first n type electrode is formed in one sunken area on the first bound layer, the first active layer is formed on the first bound layer, the p type second bound layer is formed on the first active layer, the tunneling layer is formed on the second bound layer, the n type third bound layer is formed on the tunneling layer, the second n type electrode is formed in one sunken area on the third bound layer, the second active layer is formed on the third bound layer, the p type fourth bound layer is formed on the second active layer and the p type third electrode is formed on the fourth bound layer. The tunneling layer can comprise one superlattice tunneling layer and can avoid the formation of a pn junction surface with a commute characteristic between the p type second bound layer and the n type third bound layer. Pressure can penetrate one second n type electrode to apply to the p type second bound type. The light emitting diode can easily and independently control two active layers with different wavelengths to obtain the effect of randomly matching colors.
Description
Technical field
The present invention relates to a kind of light emitting diode construction, particularly relate to a kind of light emitting diode construction with three end pnpn concatenation types of superlattice (superlattices) tunneling layer.
Background technology
In recent years, utilize the compound semiconductor of nitrogen gallium, attract many people's sight as the light-emitting diode component of gallium nitride (GaN), aluminium gallium nitride alloy (GaAlN), InGaN (GaInN) etc.Nitrogenous three compounds of group are the material of a broadband energy gap, and its emission wavelength can contain from ultraviolet light always and covers to ruddiness, and therefore can say so almost contains the wave band that covers whole visible light.
Because the employed material factor of manufacturing process can't cause the white light-emitting diodes that sends all band light beam, so can only just can produce the light-emitting diode that emits white light with via the three primary colors mixed light now.And at present existing skill, the mode of mixed light has two to three kinds, and a kind of mode is to use passive type mixed light mode, that is uses the light-emitting diode of single wavelength, so that excite phosphor powder.Another mixed light mode is an energy conversion type mixed light mode, this method is close with passive type mixed light mode, but in fact then be in the light-emitting diode growth, one group to two groups multi-layer quantum well (the Multi quantum well with main light emission layer different wave length that grow up that increase more, MQW), but the emission wavelength of extra multi-layer quantum well must be more original long the or short wavelength of wavelength that uses of main light emission layer, by exciting of main light emission layer, can produce two or more wavelength, so, after the different colours light mixed light, can produce the light-emitting diode of similar white light.Another mixed light mode is active mixed light mode, that is in the active illuminating layer, design the multi-layer quantum well of two or more different emission wavelengths or use other form, so that produce the light source of different emission wavelengths, so can produce the light-emitting diode of similar white light by the electric current drive.
In existing skill, there is several means can produce the light emitting diode construction of above-mentioned described active mixed light.Fig. 1 is the light-mixed type light-emitting diode structure schematic diagram of an existing known common uncontrollable glow color.
See also shown in Figure 1ly, the light-emitting diode of this type is formed in the substrate 10, as the Sapphire substrate.Be crystal nucleation layer (nucleationlayer) 12 and N type conductive buffer layer (n-type conductive buffer layer) 14 in regular turn in the substrate 10, resilient coating 14 is the GaN of N type, and its purpose is used for making follow-up long crystalline substance more smoothly with easy.Going up of resilient coating 14 is first active layers (active layer) 18 as illuminating, and generally it can form bond course (confinementlayer) up and down or be called coating layer (Cladding layer) 16,20.Generally speaking, the conductivity type of bond course 16,20 is opposite, but because of second active layers (active layer) 22 that on bond course, has in addition as illuminating, it has bond course 20,24 up and down, this moment, the conductivity type of bond course 20,24 was opposite, as shown in the figure, and the AlGaN that existing known following bond course 16 mixes for the N type, middle bond course 20 is the GaN of N type, is the AlGaN that the P type mixes and go up bond course 24.Afterwards, form contact layer 26 on last bond course 24, it is P type GaN.Then form anode electrode 28 again.In addition, on the zone that isolates with bond course 16,20,24 and first and second active layers 18,22 on the resilient coating 14, form electrode 30, as the cathode electrode of diode.Wherein, first active layers 18 is that (active layers 22 is for sending the MQW material of blue light in addition for multiple quantum well, MQW) material for the multiple quantum well of green-yellow light.
Structure according to this, when add voltage forward in the anode electrode 28 of diode with cathode electrode 30 between the two the time, then since first active layers 18 and second active layers 22 all by this forward current, so the luminosity of two active layers, can't be controlled separately, make to obtain pure white light.Under this traditional type light-emitting diode structure, because the luminous efficiency difference of two active layers, so can't obtain the luminous intensity ratio of appropriateness; That is color compensating, so that obtain a light beam near white light.
Seeing also shown in Figure 2ly, is the three luminous end diode structure schematic diagrames of another kind of existing known common may command luminous intensity.The light-emitting diode of the type is formed in the substrate 40, as the Sapphire substrate.Be crystal nucleation layer 42 and N type conductive buffer layer 44 in regular turn in the substrate 40, resilient coating 44 is the GaN of N type, and its purpose is used for making follow-up long crystalline substance more smoothly with easy.Be first active layers 48 as illuminating on the resilient coating 44, generally it can form bond course 46,50 up and down.The conductivity type of bond course 46,50 is opposite, second active layers 52 that illuminating is arranged on bond course 50, it has bond course 50,52 up and down, this moment, the conductivity type of bond course 50,54 also was opposite, as shown in the figure, the AlGaN that existing known following bond course 46 mixes for the N type, middle bond course 50 is the AlGaN of P type, and goes up the AlGaN that bond course 54 mixes for the N type.Afterwards, form contact layer 56 on last bond course 54, be N type GaN this moment.Then form one the one N type electrode 58.In addition, on the zone that isolates with the bond course 46,50 and first active layers 48 on the resilient coating 44, form the 2nd N type electrode 60.On the zone that isolates with the bond course 54 and second active layers 52 on the bond course 50, form P type electrode 62.
Figure 2 shows that three end assemblies of a npn structure, its advantage can be controlled separately for each active layers luminous intensity, for example can implement forward voltage at P type electrode 62 and the 2nd N type electrode 60, so that control the luminous intensity of first active layers 48, or implement forward voltage at a P type electrode 62 and a N type electrode 58, so that control the luminous intensity of second active layers 52, the luminous intensity that so can adjust two groups of luminescent layers is to blend approximate white light.
But the shortcoming of this structure is: the formation with p type electrode contact point of low contact resistance is a major challenge, because P type electrode 62 need be formed on the P type bond course 50, it generally needs via electricity slurry dry ecthing (plasma dry etching) technology it to be exposed, and then forms P shape electrode.But through the impact of electricity slurry ion (plasma), p type surface is easy to be damaged (damage), so that be subjected to p type surface after the ion(ic) etching to be difficult to be formed with the contact point of good ohmic contact.So can make the operating voltage of assembly improve greatly, and then influence the reliability of luminous efficiency and assembly.
In said structure, bond course 50 also is the contact layer of P type electrode 62 simultaneously simultaneously, and it is GaN or AlGaN layer that the P type mixes, and its doped chemical for example is Mg, Zn, Cd, the element of divalence such as Be.The activation energy of these impurity in GaN is quite big, quite is not easy so will form the P type doped contact layers of high carrier concentration.In addition, the main carrier that the P type mixes is electric hole, (effective mass) is bigger than electronics for its effective mass, therefore the penetrability of carrier is very poor, so P type contact layer 50 becomes with ohmic contact characteristic between the anode electrode 62 and is on duty mutually, especially when bond course 50 be that above-mentioned situation can be more serious when containing the AlGaN layer of aluminium.
Comprehensively the above uses a plurality of multi-layer quantum wells to send light beams of different wavelengths, after a plurality of light beams are mixed, can send the light emitting diode construction near white light beam.But with existing skill, according to Fig. 1 and the described illustration of Fig. 2, last illustration uses the pn structure of diode, can't control the luminous active layers of two different wave lengths individually, so can't compensate the energy imbalance that is caused because of making, reduce the possibility of reaching the light-emitting diode that sends normal white light.An illustration then, though use the structure of npn structure, can control the luminosity of two different wave length active layers separately, but because on present manufacturing process, the electrode framework of low contact resistance has its manufacturing difficulty to a certain degree in p type GaN semiconductor layer, and it is difficult especially on the p type surface after the impact of starching ion plasma through electricity particularly to form p type electrode.
This shows that above-mentioned existing light emitting diode construction still has defective, and demands urgently further being improved.In order to solve the problem that light emitting diode construction exists, relevant manufacturer there's no one who doesn't or isn't seeks solution painstakingly, but do not see always that for a long time suitable design finished by development, and common product does not have appropriate structure to address the above problem, and this obviously is the problem that the anxious desire of relevant dealer solves.
Because the defective that above-mentioned existing light emitting diode construction exists, the inventor is based on being engaged in this type of product design manufacturing abundant for many years practical experience and professional knowledge, actively studied innovation, in the hope of founding a kind of novel light emitting diode construction, can improve general existing light emitting diode construction, make it have more practicality.Through constantly research, design, and after studying sample and improvement repeatedly, create the present invention who has practical value finally.
Summary of the invention
The objective of the invention is to, overcome the defective that existing light emitting diode construction exists, and provide a kind of novel light emitting diode construction, technical problem to be solved is to make it that a kind of tunneling layer that has is provided, short period superlattice stressor layers (short-period strained layersuperlattices for example, SPS) tunneling layer, the light emitting diode construction of three end pnpn concatenation type may command luminous intensities, can control the active layers of two different wave lengths easily separately, and then can reach the purpose of any color matching, thereby be suitable for practicality more, and have the value on the industry.
The object of the invention to solve the technical problems realizes by the following technical solutions.According to a kind of light emitting diode construction that the present invention proposes, it comprises: a substrate; One first bond course is positioned in this substrate, contains a N type alloy; One first electrode is positioned on this first bond course; One first active layers is positioned on this first bond course, can send one first coloured light through exciting; One second bond course is positioned on this first active layers, contains P type alloy; One superlattice tunneling layer is positioned on this second bond course; One the 3rd bond course is positioned on this superlattice tunneling layer, contains a N type alloy; One N type, second electrode is positioned at a sunk area of the 3rd bond course; One second active layers is positioned on the 3rd bond course, can send one second coloured light through exciting; One the 4th bond course is positioned on this second active layers, contains a P type alloy; And a P type third electrode, be positioned on the 4th bond course.
The object of the invention to solve the technical problems also can be applied to the following technical measures to achieve further.
Aforesaid light emitting diode construction, wherein said superlattice tunneling layer comprises the Al of N-type
yIn
xGa
1-x-yN.
Aforesaid light emitting diode construction, the material of wherein said substrate comprise group's one of aluminium oxide (sapphire), carborundum (SiC), zinc oxide (ZnO), silicon (Si) substrate, gallium phosphide (GaP) and GaAs (GaAs) at least.
Aforesaid light emitting diode construction, wherein said those active layers have quantum well structures.
Aforesaid light emitting diode construction, the material of wherein said active layers comprise the semiconductor quantum well based on three-group-v element (quantum well) structure of mixing.
Aforesaid light emitting diode construction, wherein said first electrode, second electrode, with this third electrode through suitably applying voltage, to control the intensity of this first coloured light and this second coloured light, to reach near white light.
The object of the invention to solve the technical problems also adopts following technical scheme to realize.According to a kind of light emitting diode construction that the present invention proposes, it comprises: a substrate; One the one pn light emitting diode construction layer is positioned in this substrate, can send one first coloured light, wherein comprises a n type first electrode again; One the 2nd pn light emitting diode construction layer can send one second coloured light on a pn light emitting diode construction layer, wherein comprise a n type second electrode and a p type third electrode again; And at least one superlattice tunneling layer, between a pn light emitting diode construction layer and the 2nd pn light emitting diode construction layer, with the pn composition surface of tool rectification characteristic between eliminating.
The object of the invention to solve the technical problems also can be applied to the following technical measures to achieve further.
Aforesaid light emitting diode construction, wherein said superlattice tunneling layer comprises the Al of N-type
yIn
xGa
1-x-yN.
Aforesaid light emitting diode construction, wherein said first electrode, second electrode, with this third electrode through suitably applying voltage, to control the intensity of this first coloured light and this second coloured light, to reach near white light.
The object of the invention to solve the technical problems also adopts following technical scheme to realize.According to a kind of light emitting diode construction that the present invention proposes, it comprises: a substrate; One the one pn light emitting diode construction layer is positioned in this substrate, can send one first coloured light, wherein comprises a n type first electrode again; One first superlattice tunneling layer is positioned on the pn light emitting diode construction layer; One n type bond course is positioned on this first superlattice tunneling layer; One n type, second electrode is formed at a sunk part of this n type bond course; One second superlattice tunneling layer is positioned at this n type bond course top; And one the 2nd pn light emitting diode construction layer, above this second superlattice tunneling layer, can send one second coloured light, wherein comprise a n type third electrode again.
The object of the invention to solve the technical problems also adopts following technical scheme to realize.According to a kind of light emitting diode construction that the present invention proposes, it comprises: a substrate; One n type bond course is positioned in this substrate; One n type, first electrode is positioned at a sunk part of this n type bond course; One superlattice tunneling layer is positioned on this n type bond course; One the one pn light emitting diode construction layer is positioned on this superlattice tunneling layer, can send one first coloured light, comprises again that wherein a n type second electrode is on a n type layer; One the 2nd pn light emitting diode construction layer is positioned on the pn light emitting diode construction layer, can send one second coloured light, and wherein the 2nd a pn light emitting diode construction layer and a pn light emitting diode construction layer are shared this n type bond course; And a p type third electrode, be arranged on the 2nd pn light emitting diode construction layer.
The object of the invention to solve the technical problems also adopts following technical scheme to realize.According to a kind of light emitting diode construction that the present invention proposes, it comprises: a substrate; One the one pn light emitting diode construction layer and one the 2nd pn light emitting diode construction layer interconnect and are positioned in this substrate, wherein dispose three operation electrodes again; At least one superlattice tunneling layer, be positioned among a pn light emitting diode construction layer and one the 2nd pn light emitting diode construction layer, the n of one at least type electrode in order to via those three operation electrodes applies at least one p type layer that a positive voltage is given those light emitting diode construction layers.
The object of the invention to solve the technical problems also adopts following technical scheme to realize.According to a kind of light emitting diode construction that the present invention proposes, it comprises: a substrate; Several pn light emitting diode construction layers, string knot are formed in this substrate, and wherein those pn light-emitting diodes forward or reverse string knot dispose several operation electrodes again, and wherein those operation electrodes comprise at least two n type electrodes; And at least one superlattice tunneling layer, be positioned among those pn light emitting diode construction layers, so that the one at least of those n type electrodes can apply the p type layer that a positive voltage is given those pn light emitting diode construction layers.
The object of the invention to solve the technical problems also can be applied to the following technical measures to achieve further.
Aforesaid light emitting diode construction wherein more comprises a n type bond course, between this superlattice tunneling layer and those n type electrodes, gives this p type layer of those pn light emitting diode construction layers to apply this positive voltage.
Aforesaid light emitting diode construction, wherein said those pn light emitting diode construction layers comprise two pn light emitting diode construction layers.
Aforesaid light emitting diode construction, wherein said those pn light emitting diode construction layers comprise three pn light emitting diode construction layers.
Aforesaid light emitting diode construction, the quantity of wherein said those operation electrodes is four.
The present invention compared with prior art has tangible advantage and beneficial effect.By above technical scheme as can be known, in order to reach aforementioned goal of the invention, major technique of the present invention thes contents are as follows:
The present invention proposes a kind of light emitting diode construction, come as the tunneling layer between diode with the SPS tunneling layer structure of mixing, the material of this tunneling layer is the superlattice stressor layers, so that the n type semiconductor layer that can form high concentration (high conductivity) is between between the light-emitting diode of two groups of different emission wavelengths, and then reaches and link luminescent layer and indivedual its luminous intensities of control.Yet because the effect of tunneling layer, it does not have the existence on the pn composition surface (pn junction) of tool rectification characteristic, and voltage can directly be put on the p type semiconductor layer of diode by N type electrode.
The present invention is a kind of light emitting diode construction of proposition, and it utilizes the SPS tunneling layer structure of mixing to be aided with suitable n type semiconductor layer and N type electrode as the tunneling layer between diode, and can be in order to luminous efficiency and the reduction operating voltage that increases product.
The present invention proposes a kind of light emitting diode construction, come as the tunneling layer between diode with the SPS tunneling layer structure of mixing, N type electrode more can have the material of same conductivity type with contact layer, and can eliminate the composition surface problem between P type electrode and the contact layer.
The present invention proposes a kind of light emitting diode construction, and bond course is opposite polarity doped layer about luminescent layer, so as long as connect luminescent layer bond course up and down, the i.e. luminous intensity of may command luminescent layer.
The present invention proposes a kind of light emitting diode construction, it uses the SPS tunneling layer structure of mixing to come as the tunneling layer between diode, can connect N type bond course by N type electrode, through after this tunneling layer, P type bond course can be connected to, and the purpose of the relevant luminescent layer of this P type bond course of control can be reached.
The present invention proposes a kind of light emitting diode construction, it uses the SPS tunneling layer structure of mixing, has low resistance characteristic, simultaneously in SPS tunneling layer structure, can ignore and the material of conductivity type, so can all not have pn composition surface (pnjunction) effect of tool rectification characteristic with p type semiconductor layer or n type semiconductor layer, so can control the luminous intensity of two luminescent layers easily individually with three electrodes.
The disclosed light emitting diode construction of the present invention, its structure description is as follows:
A kind of light emitting diode construction comprises a substrate.One n type, first bond course is formed in this substrate.One the one n type electrode is formed at a sunk area on this first bond course.One first active layers is formed on first bond course.One p type, second bond course is formed on first active layers.One superlattice tunneling layer is formed on second bond course.One n type the 3rd bond course is formed on the superlattice tunneling layer.One the 2nd n type electrode is formed at a sunk area on this n type the 3rd bond course.One second active layers is formed on the 3rd bond course.One p type the 4th bond course is formed on second active layers.One p type third electrode is formed on the 4th bond course.
In the said structure, the superlattice tunneling layer can be exempted the formation of the pn faying face between p type second bond course and n type the 3rd bond course.Voltage can see through one the 2nd n type electrode, imposes on p type second bond course.
In the said structure, first bond course and second bond course are controlled first active layers makes it send first light, for example blue light.The 3rd bond course and the 4th bond course are controlled second active layers makes it send second light, for example green-yellow light.
In sum, the light emitting diode construction that the present invention is special, a kind of tunneling layer that has is provided, short period superlattice stressor layers (short-period strained layer superlattices for example, SPS) tunneling layer, the light emitting diode construction of three end pnpn concatenation type may command luminous intensities can be controlled the active layers of two different wave lengths easily separately, and then can reach the purpose of any color matching, thereby be suitable for practicality more.It has above-mentioned many advantages and practical value, and in like product, do not see have similar structural design to publish or use and really genus innovation, no matter it structurally or bigger improvement all arranged on the function, have technically than much progress, and produced handy and practical effect, and more existing light emitting diode construction has the multinomial effect of enhancement, thus be suitable for practicality more, and have the extensive value of industry, really be a new and innovative, progressive, practical new design.
Above-mentioned explanation only is the general introduction of technical solution of the present invention, for can clearer understanding technological means of the present invention, and can be implemented according to the content of specification, below with preferred embodiment of the present invention and conjunction with figs. describe in detail as after.
Description of drawings
Fig. 1 is the light-mixed type light emitting diode construction schematic diagram of an existing common uncontrollable glow color.
Fig. 2 is another light emitting diode construction schematic diagram that has common may command glow color now.
Fig. 3 is the light emitting diode construction schematic diagram according to may command glow color of the present invention.
Fig. 4 is the assembly transmission mechanism schematic diagram of light-emitting diode of the present invention.
Fig. 5-Fig. 7 is other design implementation illustration intention of light-emitting diode of the present invention.
10: substrate 12: crystal nucleation layer
14: conductive buffer layer 16,20,24: bond course
22: the second active layers of 18: the first active layers
26: contact layer 28: anode electrode
30: cathode electrode
40: substrate 42: crystal nucleation layer
44: conductive buffer layer 46,50,54: bond course
52: the second active layers of 48: the first active layers
56: 58: the one N types of contact layer electrode
60: the two N type electrode 62:P type electrodes
100: 110: the first bond courses of substrate
130: the second bond courses of 120: the first active layers
140: 150: the three bond courses of tunneling layer
170: the four bond courses of 160: the second active layers
210: the one N types of 180:P type electrode electrode
200: the two N type electrodes
Embodiment
Below in conjunction with accompanying drawing and preferred embodiment, to its embodiment of light emitting diode construction, structure, feature and the effect thereof that foundation the present invention proposes, describe in detail as after.
Light emitting diode construction of the present invention mainly is to utilize the SPS tunneling layer as the tunneling layer between N type and the p type semiconductor layer, can utilize the SPS tunneling layer can eliminate the characteristic on the pn composition surface of tool rectification characteristic between N type and P type semiconductor interlayer.So can apply a voltage, see through this tunneling layer, apply a positive voltage at p type semiconductor layer at N type semiconductor.This effect is equal to directly and applies a positive voltage on P layer semiconductor layer, but but is not used in the P type electrode that p type semiconductor layer forms.The etching that so can avoid producing because of electric paste etching destroys, and then causes the generation of the phenomenon of bad ohmic contact.
Seeing also shown in Figure 3ly, is the light-emitting diode structure schematic diagram of the may command glow color that constitutes according to the present invention.A kind of light emitting diode construction with three end pnpn concatenation type may command glow colors of SPS tunneling layer, its framework is in a substrate 100, and this substrate can be sapphire (sapphire), carborundum (SiC), zinc oxide (ZnO), silicon (Si) substrate, gallium phosphide (GaP), GaAs (GaAs), aluminium oxide (Al
2O
3) wait or base material that other is suitable for.
Two active layers 120,160 that different emission wavelengths are arranged in substrate 100, it can be made of the III-N family elemental nitrogen compound of material by the nitrogen gallium.And the material of active layers 120,160 can be the Al without doping or doping in the present embodiment
aIn
bG
A1-a-bN/Al
xIn
yGa
1-x-yN (a, b 〉=0; 0≤a+b＜1; X, y 〉=0; 0≤x+y＜1; Quantum well (quantum well) structure of x＞a), its alloy can be N type or P type, and selecting for use to being familiar with this skill person of semiconductor industry of N type or P type alloy known, so just no longer given unnecessary details at this.
Usually the active layers structure is between last bond course and following bond course, and the conductivity type of going up bond course and following bond course simultaneously is opposite.The top of substrate 100 is formed with n type first bond course 110, and can be used as conductive buffer layer.The material of first bond course 110 is the gallium nitride material of n type doping for example.One n type, first electrode 210 is formed at a sunk area of first bond course 110.First active layers 120 is formed at nonpitting other zone on first bond course 110.First active layers 120 is for having the material of multiple quantum trap, for example Al
aIn
bGa
1-a-bN/Al
xIn
yGa
1-x-yN (a, b 〉=0; 0≤a+b＜1; X, y 〉=0; 0≤x+y＜1; The compound of x＞a) can send blue light.One p type, second bond course 130 is formed on the active layers 120.The material of second bond course 130 is the gallium nitride material of p type doping for example.
One tunneling layer 140 for example is a N++-In
xGa
1-xN/In
yGa
1-yN (0＜x＜1; 0≤y≤1; The SPS tunneling layer of x＞y), or the tunneling layer of N++-InxGal-xN (0＜x＜1).One n type the 3rd bond course 150 is formed on the tunneling layer 140.This tunneling layer 140 is one of key characters of the present invention.According to the present invention, this tunneling layer is made of the III-N family element material with high carrier (carrier) concentration, for example can be SPS tunneling layer 140.Wherein the material of SPS tunneling layer 140 for example is the material of the III-N group element compound of nitrogen gallium, for example Al
uIn
vGa
1-u-vN/Al
xIn
yGa
1-x-yN SPS (u, v 〉=0; 0≤u+v≤1; X, y 〉=0; 0≤x+y＜1; X＞u).And this SPS tunneling layer 140 is to adopt so-called modulation to mix (modulation doping) to obtain excellent interface characteristic and high carrier concentration.
The 3rd bond course 150 forms a sunk area through electric paste etching, and n type second electrode 200 then is formed at the sunk area on the 3rd bond course 150.Because the 3rd bond course 150 is n type gallium nitride materials, with regard to forming n type Ohm contact electrode, the influence that its surface is not destroyed by electric paste etching more is so can have good Ohmic contact with n type the 3rd bond course 150.And because the effect of tunneling layer 140, it allows to see through n type the 3rd bond course 150, applies a positive voltage corresponding to a n type electrode 210 and gives p type second bond course 130.Therefore, structure of the present invention can have good electrode Ohm contact electrode, can suitably apply voltage to diode again, and can reach the function of adjusting white light colourity.
Then, one second luminous active layers 160 is formed on the 3rd bond course 150.Second active layers 160 for example can be sent the multiple quantum trap material of green-yellow light.One p type the 4th bond course 170 is formed on the second luminous active layers 160.Again, a p type third electrode 180 is formed on the 4th bond course 170.
Some above-mentioned bond courses are formed by gallium nitride, and only different doping.The selection of material be familiar with this skill person ripe it.Yet the present invention proposes the combination that n type the 3rd bond course 150 cooperates tunneling layer 140 especially, to solve because of electric paste etching, in the problem that p type electrode loose contact is arranged traditionally.Do not have the pn composition surface of tool rectification characteristic to produce in addition again, and do not influence the characteristic that applies voltage.
According to structure shown in Figure 3, feature of the present invention is the semiconductor layer with pnpn serial connection, and luminous active layers is all between the pn bond course, so the electrode on the pn semiconductor layer applies forward voltage, with the may command luminous intensity.
Another feature of the present invention be not on the same group the n type semiconductor layer and p N-type semiconductor N interlayer length one SPS tunneling layer is arranged is tunneling layer, can grow on the n type semiconductor layer thus has n type electrode, applying positive electricity is pressed on this n type electrode, this voltage will be through tunneling layer, directly put on the p type semiconductor layer active layers luminous intensity that may command p N-type semiconductor N is relevant.So can avoid causing p type electrode that the problem of high contact resistance will be arranged because of the influence that p N-type semiconductor N laminar surface is destroyed by electric paste etching.
According to luminous pnpn structure of the present invention, wherein this first electrode is the n type, and this second electrode is the n type, with this third electrode be the p type, through suitably applying voltage, send first coloured light and control the intensity that second active layers is sent second coloured light to control first active layers, to reach near white light.In addition, according to technical spirit spirit of the present invention, utilize a tunneling layer connect two and or three light emitting diode construction layers of sending out different wave lengths, can reach the purpose of control glow color through suitable driven.
Again, according to the application of above-mentioned tunneling layer characteristic, pnpn light emitting diode construction shown in Figure 3 can for example change the structure that is designed to as Fig. 5, Figure 6 and Figure 7 and be all preferred embodiment.
See also shown in Figure 5, a kind of light emitting diode construction, it comprises: a substrate 100.One the one pn light emitting diode construction layer (110+120+130) is positioned in this substrate 100, can send one first coloured light, wherein comprises a n type first electrode 210 again.One first tunneling layer 140 is positioned on the pn light emitting diode construction layer.One n type bond course 150 is positioned on this first tunneling layer 140.One n type, second electrode 200 is formed at a sunk part of this n type bond course 150.One second tunneling layer 152 is positioned at this n type bond course 150 tops.One the 2nd pn light emitting diode construction layer (154+160+172) above this second tunneling layer 152, can send one second coloured light, wherein comprises a n type third electrode 180 again.
Again, see also shown in Figure 6, a kind of light emitting diode construction, it comprises: a substrate 100.One n type bond course 110 is positioned in this substrate 100.One n type, first electrode 210 is positioned at a sunk part of this n type bond course 110.One tunneling layer 140 is positioned on this n type bond course 110.One the one pn light emitting diode construction layer (142+120+150) is positioned on this tunneling layer 140, can send one first coloured light, comprises again that wherein a n type first electrode 200 is on one n type bond course 150.One the 2nd pn light emitting diode construction layer (150+160+170), be positioned on the pn light emitting diode construction layer, can send one second coloured light, wherein the 2nd a pn light emitting diode construction layer and a pn light emitting diode construction layer are shared this n type bond course 150.One p type third electrode 180 is arranged at the p type layer 170 on the 2nd pn light emitting diode construction layer.
See also shown in Figure 7, a kind of light emitting diode construction, it comprises: a substrate 700.One the one pn light emitting diode construction layer (710+720+730) is positioned in this substrate 700, can send one first coloured light, for example blue light.Wherein comprise a n type first electrode 820 again.One first tunneling layer 740 is positioned on the p type bond course 730 of a pn light emitting diode construction.One n type contact layer 750 is positioned on this first tunneling layer 740.One n type, second electrode 830 is formed at a sunk part of this n type contact layer 750.One second tunneling layer 742 is positioned at this n type contact layer 750 tops.One the 2nd pn light emitting diode construction layer (760+770+780) above this second tunneling layer 742, can send one second coloured light, for example green glow.Comprise again that wherein a n type third electrode 840 is formed at a sunk part of this n type bond course 780.One the 3rd pn light emitting diode construction layer (780+790+800) is positioned on the 2nd pn light emitting diode construction layer, can send one the 3rd coloured light; Ruddiness for example.Wherein the 3rd pn light emitting diode construction layer and the 2nd pn light emitting diode construction layer are shared this n type bond course 780.One p type the 4th electrode 810 is arranged at the p type layer 800 on the 3rd pn light emitting diode construction layer.
With regard to feature of the present invention, as long as among two or three pn light emitting diode construction layers, utilize at least one tunneling layer, be positioned among a pn light emitting diode construction layer and one the 2nd pn light emitting diode construction layer and the 3rd pn light emitting diode construction layer, in order to the n of one at least type electrode, apply a positive voltage and get final product at least one p type layer of those light emitting diode construction layers via three or four operation electrodes.
The above, it only is preferred embodiment of the present invention, be not that the present invention is done any pro forma restriction, though the present invention discloses as above with preferred embodiment, yet be not in order to limit the present invention, any those skilled in the art, in not breaking away from the technical solution of the present invention scope, when the technology contents that can utilize above-mentioned announcement is made a little change or is modified to the equivalent embodiment of equivalent variations, in every case be the content that does not break away from technical solution of the present invention, according to technical spirit of the present invention to any simple modification that above embodiment did, equivalent variations and modification all still belong in the scope of technical solution of the present invention.
Claims (13)
1. light emitting diode construction is characterized in that it comprises:
One substrate;
One first bond course is positioned in this substrate, contains a N type alloy;
One first electrode is positioned on this first bond course;
One first active layers is positioned on this first bond course, can send one first coloured light through exciting;
One second bond course is positioned on this first active layers, contains P type alloy;
One superlattice tunneling layer is positioned on this second bond course;
One the 3rd bond course is positioned on this superlattice tunneling layer, contains a N type alloy;
One N type, second electrode is positioned at a sunk area of the 3rd bond course;
One second active layers is positioned on the 3rd bond course, can send one second coloured light through exciting;
One the 4th bond course is positioned on this second active layers, contains a P type alloy; And
One P type third electrode is positioned on the 4th bond course.
2. light emitting diode construction according to claim 1 is characterized in that wherein said superlattice tunneling layer comprises the Al of N-type
YIn
XGa
1-x-yN.
3. light emitting diode construction according to claim 1, the material that it is characterized in that wherein said substrate comprises group's one of aluminium oxide, carborundum, zinc oxide, silicon base, gallium phosphide and GaAs at least.
4. light emitting diode construction according to claim 1 is characterized in that wherein said those active layers have quantum well structures.
5. light emitting diode construction according to claim 1 is characterized in that the material of wherein said active layers comprises a semiconductor quantum well construction based on three-group-v element that mixes.
6. light emitting diode construction is characterized in that it comprises:
One substrate;
One the one pn light emitting diode construction layer is positioned in this substrate, can send one first coloured light, wherein comprises a n type first electrode again;
One the 2nd pn light emitting diode construction layer can send one second coloured light on a pn light emitting diode construction layer, wherein comprise a n type second electrode and a p type third electrode again; And
At least one superlattice tunneling layer is between a pn light emitting diode construction layer and the 2nd pn light emitting diode construction layer, with the pn composition surface of tool rectification characteristic between eliminating.
7. light emitting diode construction according to claim 6 is characterized in that wherein said superlattice tunneling layer comprises the Al of N-type
YIn
XGa
1-x-yN.
8. light emitting diode construction is characterized in that it comprises:
One substrate;
One the one pn light emitting diode construction layer is positioned in this substrate, can send one first coloured light, wherein comprises a n type first electrode again;
One first superlattice tunneling layer is positioned on the pn light emitting diode construction layer;
One n type bond course is positioned on this first superlattice tunneling layer;
One n type, second electrode is formed at a sunk part of this n type bond course;
One second superlattice tunneling layer is positioned at this n type bond course top; And
One the 2nd pn light emitting diode construction layer above this second superlattice tunneling layer, can send one second coloured light, wherein comprises a n type third electrode again.
9. light emitting diode construction is characterized in that it comprises:
One substrate;
One n type bond course is positioned in this substrate;
One n type, first electrode is positioned at a sunk part of this n type bond course;
One superlattice tunneling layer is positioned on this n type bond course;
One the one pn light emitting diode construction layer is positioned on this superlattice tunneling layer, can send one first coloured light, comprises again that wherein a n type second electrode is on a n type layer;
One the 2nd pn light emitting diode construction layer is positioned on the pn light emitting diode construction layer, can send one second coloured light, and wherein the 2nd a pn light emitting diode construction layer and a pn light emitting diode construction layer are shared this n type bond course; And
One p type third electrode is arranged on the 2nd pn light emitting diode construction layer.
10. light emitting diode construction is characterized in that it comprises:
One substrate;
One the one pn light emitting diode construction layer and one the 2nd pn light emitting diode construction layer interconnect and are positioned in this substrate, wherein dispose three operation electrodes again; And
At least one superlattice tunneling layer, be positioned among a pn light emitting diode construction layer and one the 2nd pn light emitting diode construction layer, the n of one at least type electrode in order to via those three operation electrodes applies at least one p type layer that a positive voltage is given those light emitting diode construction layers.
11. a light emitting diode construction is characterized in that it comprises:
One substrate;
Several pn light emitting diode construction layers, string knot are formed in this substrate, and wherein those pn light-emitting diodes forward or reverse string knot dispose several operation electrodes again, and wherein those operation electrodes comprise at least two n type electrodes; And
At least one superlattice tunneling layer is positioned among those pn light emitting diode construction layers, so that the one at least of those n type electrodes can apply the p type layer that a positive voltage is given those pn light emitting diode construction layers.
12. light emitting diode construction according to claim 11 is characterized in that wherein more comprising a n type bond course, between this superlattice tunneling layer and those n type electrodes, gives this p type layer of those pn light emitting diode construction layers to apply this positive voltage.
13. light emitting diode construction according to claim 11 is characterized in that wherein said those pn light emitting diode construction layers comprise three pn light emitting diode construction layers.
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| CNB2004100001481A CN100379037C (en) | 2004-01-06 | 2004-01-06 | Light-emitting diode structure |
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| CN100454594C (en) * | 2005-08-11 | 2009-01-21 | 璨圆光电股份有限公司 | LEd component and its driving method |
| CN102751402B (en) * | 2006-09-08 | 2016-04-06 | 晶元光电股份有限公司 | The manufacture method of semiconductor light-emitting elements and light-emitting component |
| CN103296045A (en) * | 2012-02-24 | 2013-09-11 | 华夏光股份有限公司 | Light-emitting diode device |
| CN106206865B (en) * | 2016-07-15 | 2018-05-22 | 厦门乾照光电股份有限公司 | A kind of high-voltage LED and preparation method thereof |
| JP7344433B2 (en) * | 2021-06-30 | 2023-09-14 | 日亜化学工業株式会社 | light emitting element |
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| US5166761A (en) * | 1991-04-01 | 1992-11-24 | Midwest Research Institute | Tunnel junction multiple wavelength light-emitting diodes |
| JP2002043624A (en) * | 2000-06-09 | 2002-02-08 | Lg Electronics Inc | White color light emitting diode and its manufacturing method |
| JP2002050790A (en) * | 2000-08-04 | 2002-02-15 | Hitachi Cable Ltd | Compound semiconductor light-emitting diode array |
| CN1423345A (en) * | 2001-12-07 | 2003-06-11 | 张修恒 | Structure and method for packaging colour light-emitting diode with stacked wafer |
| CN1452254A (en) * | 2002-04-17 | 2003-10-29 | 泰谷光电科技股份有限公司 | Semiconductor luminescent device using gallium nitride as substrate |
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2004
- 2004-01-06 CN CNB2004100001481A patent/CN100379037C/en not_active Expired - Lifetime
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5166761A (en) * | 1991-04-01 | 1992-11-24 | Midwest Research Institute | Tunnel junction multiple wavelength light-emitting diodes |
| JP2002043624A (en) * | 2000-06-09 | 2002-02-08 | Lg Electronics Inc | White color light emitting diode and its manufacturing method |
| JP2002050790A (en) * | 2000-08-04 | 2002-02-15 | Hitachi Cable Ltd | Compound semiconductor light-emitting diode array |
| CN1423345A (en) * | 2001-12-07 | 2003-06-11 | 张修恒 | Structure and method for packaging colour light-emitting diode with stacked wafer |
| CN1452254A (en) * | 2002-04-17 | 2003-10-29 | 泰谷光电科技股份有限公司 | Semiconductor luminescent device using gallium nitride as substrate |
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