CN100372776C - Ultra-fine zinc oxide nonometer line and its preparation method - Google Patents
Ultra-fine zinc oxide nonometer line and its preparation method Download PDFInfo
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- CN100372776C CN100372776C CNB200510130793XA CN200510130793A CN100372776C CN 100372776 C CN100372776 C CN 100372776C CN B200510130793X A CNB200510130793X A CN B200510130793XA CN 200510130793 A CN200510130793 A CN 200510130793A CN 100372776 C CN100372776 C CN 100372776C
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Abstract
The invention provides an ultra-fine zinc oxide nanometer wire and a preparing method thereof, which belongs to the technical field of semiconductor nanometer materials. The nanometer wire is an unoriented zinc oxide nanometer wire, and has hexagonal wurtzite structure. The preparation method comprises the steps that n-shaped heavily-doped silicon chips are respectively and ultrasonically cleaned in acetone and alcohol for 25 to 30 minutes, and silicon chips are plated with a layer of gold catalyst film with the thickness of 0.5 to 2 nm by an electron beam evaporation method; the silicon chips plated with gold films are used as a receiving substrate, and high-pure zinc powder is used as an evaporation source; the substrate and the evaporation source are put on a glass sheet which is then positioned in a tubular furnace, high-pure Ar2 as protective atmospheres is filled after the tubular furnace is vacuumized and the gas is scrubbed, the temperature in a reaction chamber rises to 460 to 540 DEG C at a heating rate of 10 to 20 DEG C/ min, the reactant temperature falls to the room temperature under argon shield after the reaction lasts for 100 to 150 minutes. The present invention has the advantages that the controllability and the synthesis with low cost in large area in the application of nanometer ZnO are achieved, and the shielding effect caused by the array is avoided.
Description
Technical field
The invention belongs to the semiconductor nano material technical field, a kind of ultra-fine zinc oxide nonometer line particularly is provided and has made each method, and can obtain excellent field emission performance.
Background technology
(ZnO, Eg=3.37eV) field emission characteristic of material has just had report as far back as twentieth century six the seventies to wide bandgap semiconductor zinc oxide.For example Rihon in 1978 and Marien have studied the field desorptiion on ZnO top layer under the field emission electron energy spectrum of ZnO and the high field intensity respectively.But, because ZnO at room temperature has higher exciton bind energy (60meV) and the great gain of light factor (300cm
-1), it more is that ZnO is used to make short-wave LED and laser diode that people pay close attention to, and uses at aspects such as nesa coating, chemical sensor and varistors, and to the research of ZnO field emission characteristic system not.In recent years, the appearance of accurate One-Dimensional ZnO nanostructure rekindles the interest of numerous investigators to the ZnO field emission characteristic.Accurate One-Dimensional ZnO material has high length-to-diameter ratio, favorable mechanical performance and chemical stability, what is more important, as wide bandgap semiconductor, ZnO has intensive band curvature and lower electron affinity under high field intensity, these characteristics make the ZnO nano material may have good field emission performance.People such as Lee and Zhao has studied the field emission performance [C.J.Lee of ZnO nano-array respectively, T.J.Lee, S.C.Lyu, Y.Zhang, H.Ruh, H.J.Lee, Field emissionfrom well-aligned zinc oxide nanowires grown at low temperature, Appl.Phys.Lett., 2002,81:3648-3650, Q.Zhao, H.Z.Zhang, Y.W.Zhu, S.Q.Feng, X.C.Sun, J.Xu, and D.P.Yu, Morphological effects on the fieldemission of ZnO nanorod arrays Appl.Phys.Lett, 2005 86:203115-203117].But the ZnO nano-array is not easy control on preparation technology, especially is difficult to prepare the array of big area orientation homogeneous.And in the emission process on the scene,, often produce more intense shielding effect because there is very high array density in array.Thereby be necessary to seek a kind of more simple and efficient method and prepare a kind of ZnO nano material, it both can solve controllability and the big area low-cost synthetic problem of nano-ZnO in using, and can avoid again because the shielding effect that array causes.
Summary of the invention
The object of the present invention is to provide a kind of ultra-fine zinc oxide nonometer line and preparation method thereof, realized that controllability and the big area in the nano-ZnO application is low-cost synthetic, avoided because the shielding effect that array causes.
Ultra-fine zinc oxide nonometer line of the present invention is non-oriented ZnO nano line, and the ZnO nano wire has hexagonal wurtzite structure, and nanowire diameter is 10～20nm, and length is 3～14 μ m.
The present invention adopts simple physics method of evaporating (Physical Vapor Deposition, PVD) on silicon substrate, synthesize the ultra-fine ZnO nano wire of big area random orientation, the purity of the nano wire that obtains is very high, and diameter Distribution is more even, diameter is about 10～20nm, and length is 3～14 μ m.The present invention has studied the field-causing electron emission characteristic of ultra-fine ZnO nano wire in the launching system of high vacuum field, find to obtain higher field transmitter current under very low threshold field strength, can compare favourably with CNT (carbon nano-tube) fully.In addition,, can work than under the low vacuum because ZnO is more stable than carbon pipe, thus more practical aspect flat-panel monitor.In addition, in the specimen preparation process, the silicon substrate temperature can be lower than 500 ℃, and this is highly beneficial for being equipped with display device with the direct growth legal system, generally can not be above 550 ℃ because be used for the pole plate glass treatment temperature of indicating meter.So, no matter from specimen preparation still from the field emission performance of sample, show that all ultra-fine ZnO nano wire has wide application prospect in field of flat panel displays.Concrete technology of the present invention is as follows:
1) rinses well with the ultrasonic cleaning 25～30 minutes in acetone and alcohol respectively of n type heavy doping silicon chip, and with deionized water.The method of deposited by electron beam evaporation thick Au catalyst film of evaporation one deck 0.5～2nm on silicon chip then.
2) with the silicon chip behind the gold-plated film as receiving substrate, high-purity zinc powder is an evaporation source.Substrate and evaporation source all are placed on the sheet glass, and their horizontal throw is controlled at 6～8mm.Then sheet glass is put into the tube furnace middle part, wherein evaporation source is positioned at the inlet mouth direction.After tube furnace vacuumizes gas washing, charge into the high-purity Ar of 135～150 standard ml/min
2As protective atmosphere, make the pressure in the reaction chamber remain on 0.03～0.05MPa.With 10～20 ℃/minute temperature rise rates the temperature of reaction chamber is risen to 460～540 ℃.Keep high-purity Ar this moment
2Flow, introduce the argon oxygen gas mixture (O of 1～2 standard ml/min simultaneously
2/ Ar:4～5%), reacts after 100～150 minutes, drop to room temperature in argon shield.
Advantage of the present invention:
The present invention adopts low temperature (460～540 ℃) CVD (Chemical Vapor Deposition) method to prepare the big area ultra-fine zinc oxide nonometer line on silicon chip.Compare with the ZnO array, non-oriented ZnO nano line is more simple and easy control on operating procedure, and big area is synthetic easily.In addition, owing to only need silicon chip, can reduce production costs greatly as substrate.Therefore, the invention solves nano level ZnO use in the institute controllability and the big area low cost synthetic problem that must solve.
Measurement shows, ultra-fine zinc oxide nonometer line has very high field emission efficiency, and (emission efficiency can CNT (carbon nano-tube) compare favourably, and reached practical threshold value), can be used as the novel electron source, particularly might become the following critical material that replaces a class novel flat-plate indicating meter of liquid crystal.Its advantage is that high resolving power, simple technology, perfect structure and low-down cost are arranged.
Method of the present invention institute synthetic nano zine oxide controllable diameter, good stability, manufacture craft is simple, operation easily, cost is low, and the productive rate height is compatible with traditional semiconductor processing technology, is easy to suitability for industrialized production.And gas-phase deposition itself has guaranteed the purity of product, the pollution of having avoided liquid phase preparation process to bring to product.
Zinc oxide itself has good chemical stability and anti-sputter ability, and therefore, the flat-panel monitor of making based on zinc oxide nanowire can have very high field emission stability and life-span.
Description of drawings
Fig. 1 is the stereoscan photograph of the ultra-fine zinc oxide nonometer line of growing on the silicon substrate of the present invention.
Fig. 2 is the field emission strength of electric field of ultra-fine zinc oxide nonometer line of the present invention and the relation curve of current density.
Fig. 3 is the F-N curve of correspondence of the present invention
Embodiment
The n type heavily doped silicon substrate that at first will be coated with golden film is ultrasonic cleaning 10 minutes in acetone and alcohol respectively, rinses well with deionized water then.Silicon chip and zinc evaporation source are placed on the sheet glass, and the horizontal throw of the two is 7mm.Slide is put in the middle of the tube furnace, and evaporation source is positioned at the inlet mouth direction.System being vacuumized and charges into argon gas cleans three times.Charge into the high-purity Ar of 135 standard ml/min then
2As protective atmosphere, the pressure in the reaction chamber is 0.03MPa.With the temperature rise rate of 20 ℃/min the temperature of reaction chamber is risen to 500 ℃.Keep high-purity Ar this moment
2Flow, introduce the argon oxygen gas mixture (O of 1 standard ml/min simultaneously
2/ Ar:5%), reduce to room temperature behind the reaction 100min.Take out silicon chip, deposit one deck white product above.This product is six side's Wurzite structures.Be viewed as under the scanning electron microscope: covered the very thin ZnO nano wire of one deck on the silicon substrate, these nano wire random orientations, diameter are between 10～20nm, and length is 3～13 μ m.
The n type heavily doped silicon substrate that at first will be coated with golden film is ultrasonic cleaning 10 minutes in acetone and alcohol respectively, rinses well with deionized water then.Silicon chip and zinc evaporation source are placed on the sheet glass, and the horizontal throw of the two is 6mm.Slide is put in the middle of the tube furnace, and evaporation source is positioned at the inlet mouth direction.System being vacuumized and charges into argon gas cleans three times.Charge into the high-purity Ar of 140 standard ml/min then
2As protective atmosphere, the pressure in the reaction chamber is 0.05MPa.With the temperature rise rate of 15 ℃/min the temperature of reaction chamber is risen to 460 ℃.Keep high-purity Ar this moment
2Flow, introduce the argon oxygen gas mixture (O of 2 standard ml/min simultaneously
2/ Ar:5 volume %), reduce to room temperature behind the reaction 150min.Take out silicon chip, deposit one deck white product above.This product is six side's Wurzite structures.Be viewed as under the scanning electron microscope: covered the very thin ZnO nano wire of one deck on the silicon substrate, these nano wire random orientations, diameter are between 12～19nm, and length is 5～14 μ m.
The n type heavily doped silicon substrate that at first will be coated with golden film is ultrasonic cleaning 10 minutes in acetone and alcohol respectively, rinses well with deionized water then.Silicon chip and zinc evaporation source are placed on the sheet glass, and the horizontal throw of the two is 8mm.Slide is put in the middle of the tube furnace, and evaporation source is positioned at the inlet mouth direction.System being vacuumized and charges into argon gas cleans three times.Charge into the high-purity Ar of 150 standard ml/min then
2As protective atmosphere, the pressure in the reaction chamber is 0.03MPa.With the temperature rise rate of 10 ℃/min the temperature of reaction chamber is risen to 540 ℃.Keep high-purity Ar this moment
2Flow, introduce the argon oxygen gas mixture (O of 1 standard ml/min simultaneously
2/ Ar:4%), reduce to room temperature behind the reaction 100min.Take out silicon chip, deposit one deck white product above.This product is six side's Wurzite structures.Be viewed as under the scanning electron microscope: covered the very thin ZnO nano wire of one deck on the silicon substrate, these nano wire random orientations, diameter are between 13～18nm, and length is 3～14 μ m.
The product for preparing under embodiment 1 condition is characterized: X-ray diffraction shows that product is a hexagonal wurtzite structure.Adopt the pattern of scanning electron microscopic observation sample, find to have covered the very thin ZnO nano wire of one deck, these nano wire random orientations, the about 13nm of mean diameter (accompanying drawing 1) on the silicon substrate.The field emission characteristic of measure sample in a cover metal vacuum system.Measuring result shows that ultra-fine ZnO nano wire presents stable, emission efficiency efficiently.Accompanying drawing 2 is the relation curve between sample field transmitter current (I) the regulating YIN and YANG pole tension (V).Fig. 3 is corresponding F-N curve.A definition emission is 10 μ A/cm
-2The time field intensity for opening field intensity.According to this definition, during d=300 μ m, the unlatching field intensity of ZnO nano wire is 4.6V/cm
-1Corresponding to current density is 1mA/cm
2Extra electric field intensity be 7.4V/ μ m.As seen, the field emission efficiency of ultra-fine ZnO nano wire has been enough to satisfy the requirement of flat pannel display.
Claims (1)
1. method for preparing ultra-fine ZnO nano wire, it is characterized in that: technology is:
A, with the ultrasonic cleaning 25～30 minutes in acetone and alcohol respectively of n type heavy doping silicon chip, and rinse well, then the method for deposited by electron beam evaporation thick Au catalyst film of evaporation one deck 0.5～2nm on silicon chip with deionized water;
B, with the silicon chip behind the gold-plated film as receiving substrate, high-purity zinc powder is an evaporation source; Substrate and evaporation source all are placed on the sheet glass, and their horizontal throw is controlled at 6～8mm; Then sheet glass is put into the tube furnace middle part, wherein evaporation source is positioned at the inlet mouth direction; After tube furnace vacuumizes gas washing, charge into the high-purity Ar of 135～150 standard ml/min
2As protective atmosphere, make the pressure in the reaction chamber remain on 0.03～0.05MPa; With 10～20 ℃/minute temperature rise rates the temperature of reaction chamber is risen to 460～540 ℃, keep high-purity Ar this moment
2Flow, introduce the argon oxygen gas mixture of 1～2 standard ml/min simultaneously, reacted 100～150 minutes, drop to room temperature in argon shield; Described high-purity Ar
2Purity be: 99.9%～99.99%, the O of the argon oxygen gas mixture of introducing
2/ Ar is 4～5 volume %.
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Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN100389070C (en) * | 2006-07-24 | 2008-05-21 | 北京理工大学 | Method for preparing nano sheet superimposed layer zinc oxide |
| CN101275073B (en) * | 2007-09-26 | 2010-07-21 | 浙江大学 | Preparation for ZnO quantum dot |
| CN101328609B (en) * | 2008-04-11 | 2010-12-08 | 北京科技大学 | Method for preparing tin doping zinc oxide nanowire by vapor deposition |
| CN101445961B (en) * | 2008-12-15 | 2011-06-15 | 浙江大学 | Superfine Mg-doped ZnO nano wire and synthetic method thereof |
| CN101509123B (en) * | 2009-02-24 | 2010-09-08 | 南京大学 | Method for producing small-sized tin indium oxide nano-wire material in low-temperature |
| CN101845672B (en) * | 2009-03-28 | 2012-09-26 | 中国科学院合肥物质科学研究院 | Zinc oxide nanocone array with controllable sharpness and preparation method thereof |
| CN102476787A (en) * | 2010-11-26 | 2012-05-30 | 海洋王照明科技股份有限公司 | Preparation method of ZnO nanowire array |
| CN102531031A (en) * | 2010-12-08 | 2012-07-04 | 吉林师范大学 | Dimension and position controllable growth process of ZnO nano-wire array being vertical to substrate |
| CN102092774B (en) * | 2010-12-28 | 2012-05-23 | 电子科技大学 | Preparation method of zinc oxide nano linear array |
| CN102941079B (en) * | 2012-11-07 | 2014-10-15 | 上海大学 | Method for preparing photoelectric catalyst multilayer ZnO nanowire array |
| CN104058446B (en) * | 2014-07-08 | 2015-07-08 | 厦门大学 | Low-dimensional zinc oxide nano material and low-temperature plasma preparation method thereof |
| CN104264131B (en) * | 2014-08-12 | 2016-11-09 | 西北大学 | A kind of fibrous ZnO nano-wire of growth and preparation method thereof on ZnO nanowire array |
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