CN100366583C - Method for preparing diamond film surface metal patternization - Google Patents
Method for preparing diamond film surface metal patternization Download PDFInfo
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- CN100366583C CN100366583C CNB2005100803805A CN200510080380A CN100366583C CN 100366583 C CN100366583 C CN 100366583C CN B2005100803805 A CNB2005100803805 A CN B2005100803805A CN 200510080380 A CN200510080380 A CN 200510080380A CN 100366583 C CN100366583 C CN 100366583C
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Abstract
The invention relates to the processing of diamond, it especially refers to the processing method of metal graph on the diamond surface. The gold nano-particles are adorned on the surface of the diamond film with a photo-etching pattern through their self-assembly, so the diamond films with assembly patterns are chemical plated or electroplated (electroplating method requires boron (or other elements)which is mixed in the conductive diamond films) with gold, silver, copper, nickel, cobalt, chrome and etc., so the patterns of gold nano-particles are covered by the metals in this way, they are strengthened to dense and thick cover patterns.
Description
Technical field
The invention belongs to the diamond machined field, particularly the method for diamond film surface metal patternization.
Background technology
Diamond is because its superior physics and chemical property have been subjected to increasing attention, and be used widely, as: have the highest hardness and can be used as cutting material, (diamond is by the heat conduction of lattice phonon to have the highest thermal conductivity, general by electronics heat conduction) can be applied in laser diode, packing chip, has highly stable chemical property etc. at aspects such as multicore sheet combination.Diamond is considered to one of most important material of 21 century, has been subjected to scientist's extensive concern all over the world decades recently.
Diamond surface metallization be diamond in applied research important aspect.The method of traditional diamond surface metallization is as Ti, Fe, Cr with metal, Ni etc. at high temperature react with diamond surface, generate the cemented metal layer, promptly metallic carbide pass through this metallic carbide layer then, carry out the metallization of diamond surface or the bonding of device, as document: Jiayu Wang, Hongyu Chen, Yizhen Bai, Xianyi Lu, Zengsun Jin.Diamond and Related Materials 9 (2000) 1632～1635; Wx 1 P.J.Boudreaux, Thermal Aspects of High Performance Packaging withSynthetic Diamond, Applications of Diamond Films and Related Materials:ThirdInternational Conference, (1995) 603～610 are reported.
But above-mentioned preparation method's shortcoming is: the traditional method step of diamond surface metallization is numerous and diverse, the operational condition harshness, and when diamond surface generates the cemented metal layer, can cause the etching and the modification of diamond surface, influenced the premium properties of diamond itself.
Summary of the invention
One object of the present invention is to provide a kind of simple operation method and step, on the basis of not destroying diamond surface, realize the metallization of diamond film surface simultaneously, also pass through surperficial photoetching technique, realize preparation of diamond film surface microcircuit and diamond film surface metal patternization.
What another object of the present invention is to provide a kind of diamond surface golden nanometer particle figure adds strong method (electroless plating or plating).
The present invention is intended to develop the metallized novel method of a kind of diamond film surface---promptly by the self-assembly of golden nanometer particle at diamond film surface, make the nanoparticle of gold modify diamond film surface, the method by electroless plating or plating (this method requires adulterated conductive diamond sheet) makes the golden nanometer particle pattern of modifying diamond surface strengthen becoming the circuit of different metal then.This metallized surface all can be used in fields such as the little manufacture field of diamond film surface, the little line design of diamond film surface field, diamond thin devices.
The method of diamond film surface metal patternization of the present invention may further comprise the steps:
1. the amination on diamond thin sheet surface
The diamond thin sheet was used alcohol and ultrapure water supersound washing respectively 15～60 minutes, between 100～150 degrees centigrade, toasted 30～60 minutes then, this diamond diaphragm is placed in the tetrafluoroethylene reactor, drips one deck olefines amido liquefied compound liquid film (200～500 μ L/cm on diamond thin sheet surface
2), with the sealing of tetrafluoroethylene reactor, fed rare gas element then 10～30 minutes with quartzy cover plate, under the 254nm UV-light, shone 8～24 hours, take out the diamond thin sheet then, use alcohol and ultrapure water difference supersound washing 15～30 minutes respectively, standby.
2. the preparation of amination diamond thin sheet photomask surface glue pattern
After the diamond thin sheet that step is 1. amido modified was cleaned, the method for using spin coating was at its surface-coated one deck ultraviolet plus or minus photoresist material (50～200 μ L/cm
2), coated conditions is as follows: the surface at amido modified diamond thin sheet drips ultraviolet positive photoresist or ultraviolet negative photoresist, under 1300～1700 rev/mins of rotating speeds, spin coating 60～90 seconds is placed 20～120 minutes (the surface tension self aligning that makes it by viscous fluid is a flat surface) with this diamond thin sheet on the surface of level then.This diamond thin sheet was toasted 10～50 minutes down at 100～150 degrees centigrade, then this diamond thin sheet is taken out, design pattern (this pattern is for preparing the pattern in diamond thin sheet surface working with having, can be that line pattern also can be the pattern of other type) mask cover, this diamond thin sheet is placed under the lithography machine exposure, and (time shutter decides with the requirement of photoresist material) developed 5～20 minutes in concentration is the NaOH solution of 0.5wt% then.After taking out this diamond thin sheet, use the clear water rinsing.So far, the preparation process of diamond thin sheet photomask surface glue pattern is finished.The equal lucifuge operation of above experimentation.Operating process as shown in Figure 7.
3. the assembling of golden nanometer particle on the photoresist material pattern
The preparation of golden nanometer particle colloidal sol:
With concentration is that aqueous solution of chloraurate and the concentration of 0.1mg/mL is that the 10mg/ml Trisodium Citrate reductive agent aqueous solution mixes in reaction vessel, and wherein the volume ratio of chlorauric acid solution and sodium citrate solution is 100: 3; Be heated to boiling under the vigorous stirring, solution colour slowly becomes purple by faint yellow becoming colorless rapidly, becomes red-purple at last, obtains golden nanometer particle colloidal sol.
The golden nanometer particle colloidal sol pH value for preparing with the organic acid adjustment is greater than 1, smaller or equal to 7.0, the diamond thin sheet that then 2. step is coated with the photoresist material pattern is positioned over to be assembled in this colloidal sol 12～24 hours, take out the diamond thin sheet, clean with ultrapure water, obtain golden nanometer particle assembling pattern, standby.(owing to modify the golden nanometer particle pattern densification inadequately of diamond surface with assemble method, thickness is limited, therefore still can not or be used as device, need make the golden nanometer particle pattern strengthen becoming thicker, fine and close metal level by electroless plating or electric plating method as circuit.)
4. the diamond thin sheet of 3. step being carried out the golden nanometer particle pattern is placed on different metal and (implements electroless plating in the chemical plating fluid of gold and silver, copper, nickel or cobalt, perhaps (implement in the metal plating liquid of gold and silver, copper, nickel or chromium to electroplate at different metal as the electrochemistry negative electrode, metal is covered on the golden nanometer particle pattern on diamond thin sheet surface, make it to strengthen becoming fine and close thicker tectum.Electroless plating and electro-plating method are implemented electroless plating and plating routinely, and condition is as follows:
When implementing electroless plating, described diamond thin sheet can be undoped or adulterated diamond thin sheet, can be conduction also can be nonconducting diamond chip; When implementing to electroplate, necessarily require to use the diamond thin sheet of adulterated conduction.
Described doped diamond diaphragm is the diamond thin sheet of the conduction of doped with boron (perhaps other element).
When implementing electroless plating, need in embodiment 5, when selecting different organic acid (as: citric acid, oxalic acid, trifluoroacetic acid) for use, to obtain different metallization product patterns as acidity adjustment reagent with using suitable acid or alkali to adjust the pH value of plating bath.
The electroless plating implementation condition:
| Reinforcement metal | Reinforcement metal master salt | Reductive agent | Main salt concentration (in metal ion) mmolL -1 | Reductant concentration gL -1 | Operation pH | Service temperature ℃ |
| Silver | AgNO 3Or AgC 2H 3O 2(silver acetate) etc. | C 6H 6O 2(Resorcinol), sulfuric acid methyl p-aminophenol, 1-phenyl-3-pyrazolidone, tartrate, formaldehyde or hydroborate etc. | 5～15 | 2～20 | 10～10.5 | 15～40 |
| Gold | HAuCl 4, HAuBr 4, KAu (CN) 2, AuCl 3Or KAu (CN) 2Deng | Tartrate, formaldehyde, glycerine, glucose, hydrazine, hydroborate or hypophosphite etc. | 1～20 | 0.3～20 | 5～12 | 70～80 |
| Nickel | Ni (H 2PO 2) 2, NiCl 26H 2O, Ni (CH 3COO) 2), Ni (NH 2SO 3) 2Or NiSO 4Deng | Sodium hypophosphite, sodium borohydride, dimethyamine borane, hydrazine or diethylamine borane etc. | 100～200 | 15～35 | 4～11 | 80～90 |
| Copper | CuSO 4, Cu (NO 3) 2Or CuCl 2Deng | Formaldehyde, dimethylin borane or sodium hypophosphite etc. | 20～120 | 4～170 | 12～13 | 15～70 |
| Cobalt | CoSO 4Or CoCl 2Deng | Sodium hypophosphite, sodium borohydride, amido borine, hydrazine or formaldehyde etc. | 30～60 | 0～8 | 7～14 | 5～66 |
Electroplate implementation condition:
| Reinforcement metal | Reinforcement metal master salt | Main salt concentration (in metal ion) gL -1 | Operation pH | Service temperature ℃ |
| Silver | AgC l(+K4Fe(CN) 6) or AgNO 3(+ Na 2S 2O 3) etc. | 40～45 | 11～13 | Room temperature |
| Gold | K[Au(CN) 2] etc. | 1.5～7.5 | 8～11 | 15～70 |
| Nickel | NiSO 4·7H 2O etc. | 90～300 | 4～6 | 20～55 |
| Copper | Cu 2P 2O 7Or CuSO 4Deng | 50～120 | 7～9 | 20～50 |
| Chromium | CrO 3(+H 2SO 4) | 150～300 | Subacidity | 50～75 |
Described alcohol is selected from Virahol, propyl alcohol, butanols or amylalcohol etc.
Described photoresist material is ultraviolet positivity or ultraviolet negative photoresist (as: the BP-212 series photoresist material of Beijing Inst. of Chemical Reagent) etc., can buy from the market.
Described mask is to have polyethylene, polyester or the glass mask etc. that design pattern (this pattern can be that line pattern also can be the pattern of other type for preparing the pattern in diamond thin sheet surface working).
Described when being used to adjust golden nanometer particle pH value used organic acid be oxalic acid or citric acid etc.
Described olefines amino-complex is selected from a kind of in the amino compound that allyl amine, alkene butylamine, alkene amylamine, alkene hexyl amine, alkene heptyl amine, alkene octyl amine, alkene nonyl amine, alkene decyl amine, hendecene amine or other contain two keys.
Described rare gas element is nitrogen, argon gas etc.
Key point of the present invention:
1) diamond thin sheet surface amination
2) assembling of diamond thin sheet surface golden nanometer particle
3) golden nanometer particle is modified the metal reinforcement of diamond thin sheet picture on surface
Advantage of the present invention and excellent effect:
The advantage and the meaning of method of the present invention are: (1) can easily realize metallization (because such material can't carry out galvanic deposit) at nonconducting undoped diamond surface; (2) method of the present invention can be carried out circuit layout to diamond surface and is applied to the diamond device; (3) be the micro-machined a kind of novel method of diamond surface.Method of the present invention is utilized the self-assembly principle, the pattern for preparing the golden nanometer particle assembling at diamond surface, and be substrate with this pattern, prepare little circuit at diamond surface, the advantage of the diamond surface metallization that this method is more traditional is, can large-area preparation, and easy handling, prepare weak point consuming time, to no etching of diamond itself etc.
The present invention is practical through verification experimental verification, and technical scheme can be according to several scheme operations in Fig. 4～6.
Description of drawings
Fig. 1. the usefulness photoetching technique of the embodiment of the invention 1 is at the photoresist coating pattern of diamond surface preparation.
Fig. 2. the golden nanometer particle pattern in the diamond surface preparation of the embodiment of the invention 1.
Fig. 3. the argentation of using of the embodiment of the invention 1 is strengthened circuit at the silver of diamond surface preparation.
Fig. 4. the process flow diagram of technical scheme working method of the present invention ().
Fig. 5. the process flow diagram of technical scheme working method of the present invention (two).
Fig. 6. the process flow diagram of technical scheme working method of the present invention (three).
Fig. 7. the preparation process process schematic representation of amination diamond surface photoresist material pattern of the present invention.
In Fig. 8 A. embodiment of the invention 2, the golden nanometer particle that obtains during assembling pH=3.0 is modified SEM (scanning electronic microscope) figure of diamond surface.
In Fig. 8 B. embodiment of the invention 2, the golden nanometer particle that obtains during assembling pH=4.0 is modified SEM (scanning electronic microscope) figure of diamond surface.
In Fig. 8 C. embodiment of the invention 2, the golden nanometer particle that obtains during assembling pH=5.0 is modified SEM (scanning electronic microscope) figure of diamond surface.
In Fig. 8 D. embodiment of the invention 2, the golden nanometer particle that obtains during assembling pH=5.6 is modified SEM (scanning electronic microscope) figure of diamond surface.
In Fig. 9 A. embodiment of the invention 3, citric acid is an acidity regulator, implements temperature T=19.5 ℃, and the silver for preparing during pH=4.35 dyes a layer pattern.
In Fig. 9 B. embodiment of the invention 3, citric acid is an acidity regulator, implements temperature T=19.5 ℃, and the silver for preparing during pH=4.00 dyes a layer pattern.
In Fig. 9 C. embodiment of the invention 3, citric acid is an acidity regulator, implements temperature T=19.5 ℃, and the silver for preparing during pH=3.50 dyes a layer pattern.
In Fig. 9 D. embodiment of the invention 3, citric acid is an acidity regulator, implements temperature T=19.5 ℃, and the silver for preparing during pH=3.00 dyes a layer pattern.
In Fig. 9 E. embodiment of the invention 3, citric acid is an acidity regulator, implements temperature T=19.5 ℃, and the silver for preparing during pH=2.50 dyes a layer pattern.
In Fig. 9 F. embodiment of the invention 3, citric acid is an acidity regulator, implements temperature T=19.5 ℃, and the silver for preparing during pH=2.00 dyes a layer pattern.
In Figure 10 A. embodiment of the invention 4, citric acid is an acidity regulator, implements pH=2.50, and the silver of preparation dyes a layer pattern in the time of T=4.0 ℃.
In Figure 10 B. embodiment of the invention 4, citric acid is an acidity regulator, implements pH=2.50, and the silver of preparation dyes a layer pattern in the time of T=10.0 ℃.
In Figure 10 C. embodiment of the invention 4, citric acid is an acidity regulator, implements pH=2.50, and the silver of preparation dyes a layer pattern in the time of T=15.0 ℃.
In Figure 10 D. embodiment of the invention 4, citric acid is an acidity regulator, implements pH=2.50, and the silver of preparation dyes a layer pattern in the time of T=19.5 ℃.
In Figure 10 E. embodiment of the invention 4, citric acid is an acidity regulator, implements pH=2.50, and the silver of preparation dyes a layer pattern in the time of T=25.0 ℃.
In Figure 10 F. embodiment of the invention 4, citric acid is an acidity regulator, implements pH=2.50, and the silver of preparation dyes a layer pattern in the time of T=30.0 ℃.
In Figure 10 G. embodiment of the invention 4, citric acid is an acidity regulator, implements pH=2.50, and the silver of preparation dyes a layer pattern in the time of T=35.0 ℃.
In Figure 10 H. embodiment of the invention 4, citric acid is an acidity regulator, implements pH=2.50, and the silver of preparation dyes a layer pattern in the time of T=40.0 ℃.
In Figure 11 A. embodiment of the invention 5, implement pH=2.50, use trifluoroacetic acid to dye a layer pattern in the time of T=19.5 ℃ as the silver of acidity regulator preparation.
In Figure 11 B. embodiment of the invention 5, implement pH=2.50, use citric acid to dye a layer pattern in the time of T=19.5 ℃ as the silver of acidity regulator preparation.
In Figure 11 C. embodiment of the invention 5, implement pH=2.50, use oxalic acid to dye a layer pattern in the time of T=19.5 ℃ as the silver of acidity regulator preparation.
Embodiment
Embodiment 1
1. diamond thin sheet surface amination: the diamond thin sheet of the conduction of doped with boron was used Virahol and ultrapure water supersound washing respectively 15 minutes, then 100 degrees centigrade of bakings 30 minutes, then this diamond thin sheet is placed in the tetrafluoroethylene reactor, drips one deck allyl amine liquid film (200 μ L/cm on diamond thin sheet surface
2), with the sealing of tetrafluoroethylene reactor, fed nitrogen then 10～15 minutes with quartzy cover plate, under the 254nm UV-light, shone 8～10 hours, take out the diamond thin sheet then, use Virahol and ultrapure water supersound washing 15 minutes respectively, standby.
2. amination diamond thin sheet surface-coated photoresist material and photoresist material pattern preparation: after the diamond thin sheet that amination is good is cleaned, at its surface-coated one deck ultraviolet positive photoresist (the BP-212 photoresist material of Beijing Inst. of Chemical Reagent), coated conditions is as follows: simultaneously drip positive photoresist (50 μ L/cm at amidized diamond thin sheet with the method for spin coating
2), 1500 rev/mins of spin coatings 60 seconds, then this diamond thin sheet is placed 20 minutes (the surface tension self aligning that makes it by viscous fluid is a flat surface) on very flat surface.Then this diamond thin sheet was toasted 20 minutes down at 100 degrees centigrade, then this diamond thin sheet is taken out, (this pattern is for preparing the pattern in diamond thin sheet surface working with preparation pattern, can be that line pattern also can be the pattern of other type) polyethylene, polyester or glass masked clip, this diamond chip is placed under the 500W ultraviolet lamp exposure machine exposure 10 seconds, in concentration is the NaOH of 0.5wt%, developed 10 minutes then.Use the clear water rinsing after taking out this diamond thin sheet, at last this diamond thin sheet was toasted 40 minutes down at 120 degrees centigrade, so far, the preparation process of diamond thin sheet photomask surface glue pattern is finished.The equal lucifuge operation of above experimentation.
3. diamond thin sheet surface golden nanometer particle pattern preparation:
With concentration is that aqueous solution of chloraurate and the concentration of 0.1mg/mL is that the 10mg/ml Trisodium Citrate reductive agent aqueous solution mixes in reaction vessel, and wherein the volume ratio of chlorauric acid solution and sodium citrate solution is 100: 3; Be heated to boiling under the vigorous stirring, obtain golden nanometer particle colloidal sol.
The golden nanometer particle colloidal sol pH value for preparing with the citric acid adjustment is 2.0～4.0, the diamond thin sheet that will be coated with the photoresist material pattern then is positioned in this colloidal sol to be assembled 24 hours, take out the diamond thin sheet, clean, obtain golden nanometer particle assembling pattern with ultrapure water.
4. the graphical diamond surface chemical silvering of golden nanometer particle dyes reinforcement: the diamond thin sheet that will carry out golden pattern is positioned in the container, add 1wt% Resorcinol solution (pH=2.5 respectively, 19.5 ℃) and the 0.22wt% silver acetate solution of same amount, reaction is 30 minutes on shaking table, take out diamond chip then, promptly obtain the patterned diamond diaphragm that final argent is strengthened with a large amount of flushing with clean water.
Embodiment 2
Golden nanometer particle prepares in embodiment 1 when having the diamond thin sheet of photoresist material pattern surface to carry out the golden nanometer particle assembling, and assembling pH value is different, and golden nanometer particle is modified the density difference in the golden nanometer particle pattern that obtains.
During pH=3.0, shown in 8A figure; During pH=4.0, shown in Fig. 8 B; During pH=5.0, shown in Fig. 8 C; During pH=5.6, shown in Fig. 8 D.
Embodiment 3
When having the diamond thin sheet of golden nanometer particle assembling pattern to implement silver to dye with embodiment 1 preparation, silver dyes the circuit preparation process and selects uniform temp (19.5 ℃) for use, the pattern difference that the silver that obtains during different pH value dyes circuit.
During pH=4.35, shown in Fig. 9 A; During pH=4.00, shown in Fig. 9 B; During pH=3.50, shown in Fig. 9 C; During pH=3.00, shown in Fig. 9 D; During pH=2.50, shown in Fig. 9 E; During pH=2.00, shown in Fig. 9 F.
Embodiment 4
When having the diamond thin sheet of golden nanometer particle assembling pattern to implement silver to dye with embodiment 1 preparation, silver dyes the circuit preparation and selects identical pH (pH=2.5) value for use, the pattern difference that the silver that obtains during different temperature dyes circuit.
In the time of T=4.0 ℃, shown in Figure 10 A; In the time of T=10.0 ℃, shown in Figure 10 B; In the time of T=15.0 ℃, shown in Figure 10 C; In the time of T=19.5 ℃, shown in Figure 10 D; In the time of T=25.0 ℃, shown in Figure 10 E; In the time of T=30.0 ℃, shown in Figure 10 F; In the time of T=35.0 ℃, shown in Figure 10 G; In the time of T=40.0 ℃, shown in Figure 10 H.
Embodiment 5
When having the diamond thin sheet enforcement silver of golden nanometer particle assembling pattern to dye with embodiment 1 preparation, silver dyes the circuit preparation and selects identical pH value (pH=2.5) for use, identical temperature (19.5 ℃), when using different organic acids to adjust Resorcinol pH value, the silver that obtains dyes the pattern difference of circuit.
When using trifluoroacetic acid, shown in Figure 11 A as acidity regulator; When using citric acid, shown in Figure 11 B as acidity regulator; When using oxalic acid, shown in Figure 11 C as acidity regulator.
Claims (10)
1. the method for a diamond film surface metal patternization, it is characterized in that: described method may further comprise the steps:
1. the amination on diamond thin sheet surface
Under lucifuge, the diamond thin sheet is used alcohol and ultrapure water supersound washing respectively, baking between 100～150 degrees centigrade then is placed on this diamond thin sheet in the tetrafluoroethylene reactor, drips one deck olefines amido liquefied compound liquid film on diamond thin sheet surface, with quartzy cover plate the tetrafluoroethylene reactor is sealed, feed rare gas element then, under UV-light, shine, take out the diamond thin sheet then, with alcohol and ultrapure water supersound washing respectively, standby respectively;
2. the preparation of amination diamond thin sheet photomask surface glue pattern
Under lucifuge, after the step diamond thin sheet that 1. amination is good cleaned, drip ultraviolet positive photoresist or ultraviolet negative photoresist in the one side of amidized diamond thin sheet, then this diamond thin sheet is placed on the plane; This diamond thin sheet 100～150 degrees centigrade of down bakings, is taken out this diamond thin sheet then, cover, this diamond thin sheet is exposed, in concentration is the NaOH solution of 0.5wt%, develop then with having the mask that designs pattern; After taking out this diamond thin sheet, use the clear water rinsing, so far, the preparation process of diamond thin sheet photomask surface glue pattern is finished;
3. the assembling of golden nanometer particle on the photoresist material pattern
The preparation of golden nanometer particle colloidal sol:
With concentration is that aqueous solution of chloraurate and the concentration of 0.1mg/mL is that the 10mg/ml Trisodium Citrate reductive agent aqueous solution mixes in reaction vessel, and wherein the volume ratio of chlorauric acid solution and sodium citrate solution is 100: 3; Be heated to boiling under the vigorous stirring, obtain golden nanometer particle colloidal sol;
The golden nanometer particle colloidal sol pH value for preparing with the organic acid adjustment is greater than 1, smaller or equal to 7.0, the diamond thin sheet that then 2. step is coated with the photoresist material pattern is positioned in this colloidal sol to be assembled, and takes out the diamond thin sheet, clean with ultrapure water, obtain golden nanometer particle assembling pattern;
4. the metal of golden nanometer particle assembling pattern is strengthened
The diamond thin sheet that 3. step is carried out golden pattern is placed in the metallochemistry plating bath implements electroless plating, perhaps will carry out the diamond thin sheet of golden pattern implements to electroplate in metal plating liquid as the electrochemistry negative electrode, metal is covered on the golden nanometer particle pattern on diamond thin sheet surface, make it to strengthen becoming fine and close thicker tectum, the metal pattern that is strengthened;
When implementing to electroplate, use the diamond thin sheet of adulterated conduction;
Described metal is selected from a kind of in gold and silver, copper, nickel, chromium or the cobalt.
2. method according to claim 1 is characterized in that: described alcohol is selected from Virahol, propyl alcohol, butanols or amylalcohol.
3. method according to claim 1 is characterized in that: described organic acid is oxalic acid or citric acid.
4. method according to claim 1 is characterized in that: described is 200～500 μ L/cm at diamond thin sheet surface dropping one deck olefines amido liquefied compound liquid film
2
5. according to claim 1 or 4 described methods, it is characterized in that: described olefines amino-complex is selected from a kind of in allyl amine, alkene butylamine, alkene amylamine, alkene hexyl amine, alkene heptyl amine, alkene octyl amine, alkene nonyl amine, alkene decyl amine or the hendecene amine compound.
6. method according to claim 1 is characterized in that: described coating one deck ultraviolet positive photoresist or ultraviolet negative photoresist are 50～200 μ L/cm
2
7. according to claim 1 or 6 described methods, it is characterized in that: the coated conditions of described coating one deck ultraviolet positive photoresist or ultraviolet negative photoresist is, under 1300～1700 rev/mins of rotating speeds, and spin coating 60～90 seconds.
8. method according to claim 1 is characterized in that: described mask is polyethylene, polyester or glass mask.
9. method according to claim 1 is characterized in that: the diamond thin sheet during described enforcement electroless plating is undoped diamond thin sheet, perhaps the diamond thin sheet of the conduction of doped with boron; Diamond thin sheet when described enforcement is electroplated is the diamond thin sheet of the conduction of doped with boron.
10. method according to claim 1 is characterized in that: described step 1. during the diamond surface amination under UV-light irradiation be under the 254nm UV-light, to shine 8～24 hours.
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| JP2011506775A (en) * | 2007-12-20 | 2011-03-03 | テヒニッシェ ウニヴェルシテート アイントホーフェン | Method for manufacturing conductive track |
| CN102419283B (en) * | 2011-09-02 | 2013-09-25 | 中国科学院苏州纳米技术与纳米仿生研究所 | Micro tensile measurement unit and production method thereof |
| CN110482482B (en) * | 2019-07-24 | 2022-04-19 | 北京科技大学 | Preparation method of insulated patterned high-thermal-conductivity diamond heat dissipation device |
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| JPS63303891A (en) * | 1987-06-04 | 1988-12-12 | Fujitsu Ltd | Method for patterning vapor-phase synthetic diamond film |
| JPH06247794A (en) * | 1993-02-23 | 1994-09-06 | Tokai Univ | Selective formation of diamond semiconductor film |
| CN1224077A (en) * | 1998-12-17 | 1999-07-28 | 中国科学院上海冶金研究所 | Process for etching diamond film pattern with reactive ion beam |
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2005
- 2005-07-04 CN CNB2005100803805A patent/CN100366583C/en not_active Expired - Fee Related
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63303891A (en) * | 1987-06-04 | 1988-12-12 | Fujitsu Ltd | Method for patterning vapor-phase synthetic diamond film |
| JPH06247794A (en) * | 1993-02-23 | 1994-09-06 | Tokai Univ | Selective formation of diamond semiconductor film |
| CN1224077A (en) * | 1998-12-17 | 1999-07-28 | 中国科学院上海冶金研究所 | Process for etching diamond film pattern with reactive ion beam |
Non-Patent Citations (2)
| Title |
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| 大面积平坦金刚石薄膜的制备和图形化. 张志明，沈荷生，何贤昶.微细加工技术，第4期. 1999 * |
| 金刚石薄膜电化学. 只金芳，田如海.化学进展，第17卷第1期. 2005 * |
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