CN100364221C

CN100364221C - High-frequency high-power differential arc oxidation pulse power source having discharging gap absorption circuit

Info

Publication number: CN100364221C
Application number: CNB2004100440050A
Authority: CN
Inventors: 狄士春
Original assignee: Individual
Current assignee: Individual
Priority date: 2004-11-04
Filing date: 2004-11-04
Publication date: 2008-01-23
Anticipated expiration: 2024-11-04
Also published as: CN1604443A

Abstract

The present invention provides a high-frequency large-power micro-arc oxidation pulse power supply with a discharge gap absorption circuit, which relates to a pulse power supply. The pulse power supply generates ceramics on the surface of aluminum, magnesium, titanium, zirconium, beryllium and tantalum and the alloy thereof. The positive electrode of (E1) of the present invention is connected with the collector electrode of (T1); the positive electrode of (E2) is connected with the anode of (D1) of which the cathode is connected with the collector electrode of (T2); the emitting electrode of (T1), the negative electrode of (E2), the input end of (DL1), and the output end of (DL2) are connected with (F1); the negative electrode of (E1), the output end of (DL1), the input end of (DL2), and the emitting electrode of (T2) are connected with (F2). The present invention is capable of outputting a current of which the frequency can reach 5kHz, makes a ceramic film which is generated on a metal surface dense, has strong bonding force with base materials, is capable of omitting a final hole sealing process for processing a corrosion prevention film, and particularly and easily generates the ceramic film on the surface of titanium alloy.

Description

The high-frequency high-power differential arc oxidation pulse power with discharging gap absorption circuit

Technical field:

The present invention relates to a kind of differential arc oxidation pulse power that is used for generating pottery at aluminium, magnesium, titanium, zirconium, beryllium, tantalum and their alloy surface.

Background technology:

Differential arc oxidization technique can be handled metal surfaces such as aluminium, magnesium, titanium, tantalum, makes its surface generate layer of ceramic film.Characteristics such as that this ceramic membrane has is wear-resisting, corrosion-resistant, heat shock resistance can be widely used in fields such as chemical industry, machinery, automobile, electronics, Aero-Space.This technology is by the control electrical quantity and regulate composition structure and the thickness that the electrolyte composition comes controlling diaphragm.At present, mao power source both domestic and external mainly contains direct current, unidirectional pulse, three kinds of output forms of interchange, but development trend from now on mainly is output as the master with interchange.CN1523745A discloses a kind of many waveforms of high-frequency high-power power supply that is used for differential arc oxidation, it is made up of DC power supply, power switch component, isolated drive circuit and single-chip microcomputer, the power supply energy consumption is low, efficient is high though this patent has, volume is little reaches the free of contamination advantage of electrical network, but it can't really realize the high frequency output of power supply, so this power supply is difficult to generate ceramic membrane on the surface of titanium and alloy thereof.

Summary of the invention:

The purpose of this invention is to provide a kind of differential arc oxidation pulse power that discharging gap absorbs the high-frequency high-power of circuit that has, it can make the structure of the ceramic membrane that generates in metal surfaces such as aluminium, magnesium, zirconium, beryllium, tantalums finer and closely woven, can also generate ceramic membrane in surface of metal titanium more easily simultaneously.Its objective is and be achieved by following proposal, the present invention includes signaling control unit 1, an isolated drive circuit A, No. two isolated drive circuit B, the first continuous regulated power supply E1, the second continuous regulated power supply E2, a high-power switch tube T1, No. two high-power switch tube T2, a heavy-duty diode D1, the positive pole of the first continuous regulated power supply E1 and the collector electrode of a high-power switch tube T1 join, the positive pole of the second continuous regulated power supply E2 and the anode of a heavy-duty diode D1 join, the collector electrode of the negative electrode of a heavy-duty diode D1 and No. two high-power switch tube T2 joins, the negative pole of the emitter of a high-power switch tube T1 and the second continuous regulated power supply E2, workpiece F1 in the work tank F joins, the output of the base stage of a high-power switch tube T1 and an isolated drive circuit A joins, an output GV1 of the input of an isolated drive circuit A and signaling control unit 1 joins, the negative pole of the emitter of No. two high-power switch tube T2 and the first continuous regulated power supply E1, the cell wall F2 of work tank F joins, the output of the base stage of No. two high-power switch tube T2 and No. two isolated drive circuit B joins, No. two output GV2 of the input of No. two isolated drive circuit B and signaling control unit 1 join, the present invention also comprises isolated drive circuit C No. three, No. four isolated drive circuit D, the forward gap absorbs circuit DL1, the negative sense gap absorbs circuit DL2, the forward gap absorbs circuit DL1 by No. three high-power switch tube T3, No. two heavy-duty diode D2 and a current-limiting resistance R1 form, the negative sense gap absorbs circuit DL2 by No. four high-power switch tube T4, No. three heavy-duty diode D3 and No. two current-limiting resistance R2 form, the collector electrode of No. three high-power switch tube T3, workpiece F1 in the emitter of No. four high-power switch tube T4 and the work tank F joins, the end of a current-limiting resistance R1, the cell wall F2 of the anode of No. three heavy-duty diode D3 and work tank F joins, the anode of the emitter of No. three high-power switch tube T3 and No. two heavy-duty diode D2 joins, the other end of the negative electrode of No. two heavy-duty diode D2 and a current-limiting resistance R1 joins, the output of the base stage of No. three high-power switch tube T3 and No. three isolated drive circuit C joins, No. three output GV3 of the input of No. three isolated drive circuit C and signaling control unit 1 join, the end of the collector electrode of No. four high-power switch tube T4 and No. two current-limiting resistance R2 joins, the negative electrode of the other end of No. two current-limiting resistance R2 and No. three heavy-duty diode D3 joins, the output of the base stage of No. four high-power switch tube T4 and No. four isolated drive circuit D joins, and No. three output GV3 of the input of No. four isolated drive circuit D and signaling control unit 1 join.A high-power switch tube T1, No. two high-power switch tube T2, No. three high-power switch tube T3, the conducting of No. four high-power switch tube T4 is controlled with the pulse signal of exporting by each output that is subjected to signaling control unit 1, its control timing as shown in Figure 2, when the first output GV1 output pulse signal of signaling control unit 1, high-power switch tube T1 conducting, other high-power switch tube all ends, the first continuous regulated power supply E1 provides energy for the differential arc oxidation discharge channel that the cell wall F2 by workpiece F1 in the work tank F and work tank F constitutes, when the 3rd output GV3 output pulse signal of signaling control unit 1, No. three high-power switch tube T3, No. four high-power switch tube T4 conducting, other high-power switch tube all ends, absorb circuit DL1 by the forward gap this moment, the loop that negative sense gap absorption circuit DL2 and work tank F are formed consumes stored energy among the work tank F, when the second output GV2 output pulse signal of signaling control unit 1, No. two high-power switch tube T2 conducting, other high-power switch tube all ends, and the second continuous regulated power supply E2 provides energy for the differential arc oxidation discharge channel that the cell wall F2 by workpiece F1 in the work tank F and work tank F constitutes.The present invention is owing to adopted positive negative sense gap to absorb circuit, the output current of frequency up to 5kHz can be provided, have and to make the structure of the pottery that generates at aluminium, magnesium, titanium, zirconium, beryllium, tantalum and their alloy surface finer and closely woven, stronger with the adhesion of basis material, processing for corrosion prevention film, even can save the advantage of last hole-sealing technology, especially when machining titanium alloy, can generate ceramic membrane on its surface very easily.

Description of drawings:

Fig. 1 is an integrated circuit structural representation of the present invention, and Fig. 2 is the impulse waveform sequential chart of each output output of signaling control unit 1.

Embodiment:

Embodiment one: specify present embodiment below in conjunction with Fig. 1.Present embodiment by signaling control unit 1, isolated drive circuit A, No. two isolated drive circuit B, No. three isolated drive circuit C, No. four isolated drive circuit D, the first continuous regulated power supply E1, the second continuous regulated power supply E2, high-power switch tube T1, No. two high-power switch tube T2, heavy-duty diode D1, a forward gap absorb circuit DL1, the negative sense gaps absorb circuit DL2 and form.The forward gap absorbs circuit DL1 to be made up of No. three high-power switch tube T3, No. two heavy-duty diode D2 and a current-limiting resistance R1, and the negative sense gap absorbs circuit DL2 and is made up of No. four high-power switch tube T4, No. three heavy-duty diode D3 and No. two current-limiting resistance R2.The positive pole of the first continuous regulated power supply E1 and the collector electrode of a high-power switch tube T1 join, the positive pole of the second continuous regulated power supply E2 and the anode of a heavy-duty diode D1 join, the collector electrode of the negative electrode of a heavy-duty diode D1 and No. two high-power switch tube T2 joins, the emitter of a high-power switch tube T1, the negative pole of the second continuous regulated power supply E2, the forward gap absorbs the collector electrode of No. three high-power switch tube T3 in the circuit DL1, the negative sense gap absorbs the emitter of No. four high-power switch tube T4 in the circuit DL2 and the workpiece F1 in the work tank F joins, the emitter of No. two high-power switch tube T2, the negative pole of the first continuous regulated power supply E1, the forward gap absorbs the end of a current-limiting resistance R1 in the circuit DL1, the negative sense gap absorbs No. three heavy-duty diode D3 anodes in the circuit DL2 and the cell wall F2 of work tank F joins, the output of the base stage of a high-power switch tube T1 and an isolated drive circuit A joins, an output GV1 of the input of an isolated drive circuit A and signaling control unit 1 joins, the output of the base stage of No. two high-power switch tube T2 and No. two isolated drive circuit B joins, No. two output GV2 of the input of No. two isolated drive circuit B and signaling control unit 1 join, the anode of the emitter of No. three high-power switch tube T3 and No. two heavy-duty diode D2 joins, the other end of the negative electrode of No. two heavy-duty diode D2 and a current-limiting resistance R1 joins, the output of the base stage of No. three high-power switch tube T3 and No. three isolated drive circuit C joins, No. three output GV3 of the input of No. three isolated drive circuit C and signaling control unit 1 join, the end of the collector electrode of No. four high-power switch tube T4 and No. two current-limiting resistance R2 joins, the negative electrode of the other end of No. two current-limiting resistance R2 and No. three heavy-duty diode D3 joins, the output of the base stage of No. four high-power switch tube T4 and No. four isolated drive circuit D joins, and No. three output GV3 of the input of No. four isolated drive circuit D and signaling control unit 1 join.The adjustable extent of the second continuous regulated power supply E2 is less than the adjustable extent of the first continuous regulated power supply E1 in this embodiment, a high-power switch tube T1 and No. two high-power switch tube T2 adopt withstand voltage more than 1200V, rated current is more than the 800A, allowing pulse current is the above high-power IGBT module of 1600A, No. three high-power switch tube T3 and No. four high-power switch tube T4 adopt withstand voltage more than 1200V, rated current is more than the 200A, allowing pulse current is the above high-power IGBT module of 400A, isolated drive circuit A, B, C, it is the chip of EXB841 that D all adopts model.

Embodiment two: this embodiment is that with the difference of embodiment one signaling control unit 1 is by positive negative sense pulse interlock circuit 2, signal generating circuit 3 is formed, signal generating circuit 3 employing models are that the single-chip microcomputer of PIC16F73 carries out the signal pulse output as Fig. 2, positive negative sense pulse interlock circuit 2 is by an AND gate 2-1, two AND gate 2-2, No. three not gate 2-3, No. four not gate 2-4 forms, the input of one AND gate 2-1 and the output of No. three not gate 2-3 join, another input of one AND gate 2-1 and the input of No. four not gate 2-4 join, the input of two AND gate 2-2 and the output of No. four not gate 2-4 join, another input of two AND gate 2-2 and the input of No. three not gate 2-3 join, another input of an AND gate 2-1 joins in output G1 of signal generating circuit 3 and the positive negative sense pulse interlock circuit 2, another input of two AND gate 2-2 in No. two output G2 of signal generating circuit 3 and the positive negative sense pulse interlock circuit 2 joins, and No. three output G3 of signal generating circuit 3 join with the input of No. three isolated drive circuit C and the input of No. four isolated drive circuit D.The output of an AND gate 2-1 in the positive negative sense pulse interlock circuit 2 and the input of an isolated drive circuit A join, and the output of two AND gate 2-2 in the positive negative sense pulse interlock circuit 2 and the input of No. two isolated drive circuit B join.

Claims

1. the differential arc oxidation pulse power that has the high-frequency high-power of discharging gap absorption circuit, comprise signaling control unit (1), an isolated drive circuit (A), No. two isolated drive circuits (B), the first continuous regulated power supply (E1), the second continuous regulated power supply (E2), a high-power switch tube (T1), No. two high-power switch tubes (T2), a heavy-duty diode (D1), the collector electrode of the positive pole of the first continuous regulated power supply (E1) and a high-power switch tube (T1) joins, the anode of the positive pole of the second continuous regulated power supply (E2) and a heavy-duty diode (D1) joins, the collector electrode of the negative electrode of a heavy-duty diode (D1) and No. two high-power switch tubes (T2) joins, the negative pole of the emitter of a high-power switch tube (T1) and the second continuous regulated power supply (E2), workpiece (F1) in the work tank (F) joins, the output of the base stage of a high-power switch tube (T1) and an isolated drive circuit (A) joins, an output (GV1) of the input of an isolated drive circuit (A) and signaling control unit (1) joins, the negative pole of the emitter of No. two high-power switch tubes (T2) and the first continuous regulated power supply (E1), the cell wall (F2) of work tank (F) joins, the output of the base stage of No. two high-power switch tubes (T2) and No. two isolated drive circuits (B) joins, No. two outputs (GV2) of the input of No. two isolated drive circuits (B) and signaling control unit (1) join, it is characterized in that the described differential arc oxidation pulse power also comprises No. three isolated drive circuits (C), No. four isolated drive circuits (D), the forward gap absorbs circuit (DL1), the negative sense gap absorbs circuit (DL2), the forward gap absorbs circuit (DL1) by No. three high-power switch tubes (T3), No. two heavy-duty diodes (D2) and a current-limiting resistance (R1) are formed, the negative sense gap absorbs circuit (DL2) by No. four high-power switch tubes (T4), No. three heavy-duty diodes (D3) and No. two current-limiting resistances (R2) are formed, the collector electrode of No. three high-power switch tubes (T3), workpiece (F1) in the emitter of No. four high-power switch tubes (T4) and the work tank (F) joins, one end of a current-limiting resistance (R1), the cell wall (F2) of the anode of No. three heavy-duty diodes (D3) and work tank (F) joins, the anode of the emitter of No. three high-power switch tubes (T3) and No. two heavy-duty diodes (D2) joins, the other end of the negative electrode of No. two heavy-duty diodes (D2) and a current-limiting resistance (R1) joins, the output of the base stage of No. three high-power switch tubes (T3) and No. three isolated drive circuits (C) joins, No. three outputs (GV3) of the input of No. three isolated drive circuits (C) and signaling control unit (1) join, one end of the collector electrode of No. four high-power switch tubes (T4) and No. two current-limiting resistances (R2) joins, the negative electrode of the other end of No. two current-limiting resistances (R2) and No. three heavy-duty diodes (D3) joins, the output of the base stage of No. four high-power switch tubes (T4) and No. four isolated drive circuits (D) joins, and No. three outputs (GV3) of the input of No. four isolated drive circuits (D) and signaling control unit (1) join.

2. the differential arc oxidation pulse power with high-frequency high-power of discharging gap absorption circuit according to claim 1, it is characterized in that signaling control unit (1) is by positive negative sense pulse interlock circuit (2), signal generating circuit (3) is formed, positive negative sense pulse interlock circuit (2) is by an AND gate (2-1), two AND gates (2-2), No. three not gates (2-3), No. four not gates (2-4) are formed, the input of one AND gate (2-1) and the output of No. three not gates (2-3) join, the input of another input of one AND gate (2-1) and No. four not gates (2-4) joins, the input of two AND gates (2-2) and the output of No. four not gates (2-4) join, the input of another input of two AND gates (2-2) and No. three not gates (2-3) joins, another input of an AND gate (2-1) joins in an output (G1) of signal generating circuit (3) and the positive negative sense pulse interlock circuit (2), another input of two AND gates (2-2) in No. two outputs (G2) of signal generating circuit (3) and the positive negative sense pulse interlock circuit (2) joins, No. three outputs (G3) of signal generating circuit (3) join with the input of the input of No. three isolated drive circuits (C) and No. four isolated drive circuits (D), the output of the AND gate (2-1) in the positive negative sense pulse interlock circuit (2) and the input of an isolated drive circuit (A) join, and the output of two AND gates (2-2) in the positive negative sense pulse interlock circuit (2) and the input of No. two isolated drive circuits (B) join.