CN100362629C - Method for cleaning semiconductor wafer - Google Patents

Method for cleaning semiconductor wafer Download PDF

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Publication number
CN100362629C
CN100362629C CNB2005100258118A CN200510025811A CN100362629C CN 100362629 C CN100362629 C CN 100362629C CN B2005100258118 A CNB2005100258118 A CN B2005100258118A CN 200510025811 A CN200510025811 A CN 200510025811A CN 100362629 C CN100362629 C CN 100362629C
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China
Prior art keywords
wafer
central point
point
support
rotation
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Expired - Fee Related
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CNB2005100258118A
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Chinese (zh)
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CN1862775A (en
Inventor
颜进甫
陈崇智
陈东强
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Semiconductor Manufacturing International Shanghai Corp
Semiconductor Manufacturing International Beijing Corp
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Semiconductor Manufacturing International Shanghai Corp
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Priority to CNB2005100258118A priority Critical patent/CN100362629C/en
Publication of CN1862775A publication Critical patent/CN1862775A/en
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Publication of CN100362629C publication Critical patent/CN100362629C/en
Expired - Fee Related legal-status Critical Current
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Abstract

The present invention provides a washing method for semiconductor wafers, which comprises the steps that a wafer is rotated, and each point on the wafer is made to rotate in the speed which is more than zero. A washing liquid is conveyed to the surface of the wafer. The surface of the wafer is washed. The washing liquid is moved from the surface of the wafer. Any point of the surface of the wafer can be washed by the method; residual substances and particles which remain on the surface of the wafer can be effectively eliminated. The flaws of wafers are eliminated, and the defective index of the wafers is reduced.

Description

The cleaning method of semiconductor wafer
Technical field
The present invention relates to the cleaning method of semiconductor wafer, relate in particular to solving center wafer and clean sordid cleaning method.
Background technology
As everyone knows, in the manufacture process of semiconductor wafer, as plasma etching, have inevitably on the surface that some residuals and particulate be retained in wafer, these impurity are easy to cause the flaws such as unsuitable reciprocation between metallization features in continuous manufacturing operation process.In some cases, this flaw may cause the device on the wafer to become can't operating, and causes the wafer defect rate to rise, cause the cost waste, therefore, after the manufacturing process that is easy to leave over residue on wafer surface finishes, must be suitably and effective clean wafers.
Through behind the etching work procedure, the wet-cleaned instrument that clean wafers is used has two kinds at present, and a kind of is the batch processing pattern, and another kind is the single wafer tupe.In the single wafer tupe, mainly use rotation (concentric circles) method to finish the cleaning purpose.As shown in Figure 1-Figure 3, be placed with wafer 501 on the support 5002 in the shell 5001 of container 500, and wafer 501 and support 5002 are fixed together with pin 502, centre at container 500 jackets 5003 is equipped with drive motors 503, and the motor shaft 504 on the motor 503 can drive support cover 5004 and rotate.Behind the support 5002 in wafer 501 is positioned over the shell 5001 of container 500, by 506 engagements of the buckle on draw-in groove on the support 5,002 505 and the support cover 5004 support cover 5004 and support 5002 are fastened togather, thereby jacket 5003 is fastened togather with shell 5001.Then, drive motor shaft 504 rotations by drive motors 503 support cover 5004 is rotated with support 5002, thereby wafer 501 is rotated with given pace with support 5002.The nozzle (not shown) is sprayed onto cleaning solution on the wafer surface, finishes cleaning by the rotation of wafer 501, but because wafer 501 is around its centre point O 501Rotate at (place, axle center of drive motors just), and as shown in Figure 3, the point on wafer 501 excircles is (as A 501Point) rotating speed is the highest, and centre point O 501The rotating speed at place is always zero, therefore, if the central point O of wafer 501 501There is residuals at the place, will be difficult to clean up, and can't reach the cleaning performance of expection, makes that the final percent defective of wafer is still very high.
Summary of the invention
Therefore, the purpose of this invention is to provide a kind of cleaning method of semiconductor wafer, the rotating speed that makes wafer centre point in cleaning process no longer is zero, effectively removes the residuals on entire wafer surface.
For realizing purpose of the present invention, the invention provides a kind of cleaning method of semiconductor wafer, in cleaning process, rotate wafer, every bit on it is all rotated with the speed greater than zero, this method comprises the steps: 1) except that the centre point of wafer, optional position on wafer or outside the wafer is a little selected, is used as the rotary middle point of center wafer; 2) central point of wafer outside its centre point revolved round the sun; 3) make wafer carry out rotation around its centre point; 4) cleaning fluid is transported to wafer surface; 5) wafer surface is cleaned; 6) cleaning fluid is removed from wafer surface.
Preferably, cleaning method of the present invention comprises: arbitrarily a bit as central point of step 1), make the wafer center of circle around this central point rotation in the selection wafer excircle, on the radius except that centre point.
Alternatively, cleaning method of the present invention comprises: select any some central point as step 1) on the wafer excircle, the wafer center of circle is rotated around this central point.
Cleaning method of the present invention can also comprise: select outer any some central point as step a) of wafer excircle, the wafer center of circle is rotated around this central point.
Because method of the present invention is all being rotated the every bit on the wafer, the wafer that promptly comprises the wafer centre point arbitrarily any rotating speed is all non-vanishing, make any a bit all the obtaining on the wafer surface clean, remove the residuals and the particulate that are retained on the wafer surface effectively, eliminate the flaw of wafer, reduced the percent defective of wafer.
Description of drawings
Fig. 1 discloses the perspective view of the used whirligig of semiconductor wafer cleaning method in the prior art;
Fig. 2 discloses the vertical view of the used whirligig of semiconductor wafer cleaning method in the prior art;
Fig. 3 discloses the schematical top view that wafer rotates in the semiconductor wafer cleaning method in the prior art;
Fig. 4 a is the perspective view according to used whirligig in the first embodiment of the present invention;
Fig. 4 b is wafer initial position vertical view in the used whirligig in first embodiment, shows the rotation path of wafer;
Fig. 5 a be according to a second embodiment of the present invention in the perspective view of used whirligig;
Fig. 5 b is the initial position vertical view in the used in a second embodiment whirligig of wafer, shows the rotation path of wafer;
Fig. 6 a is the perspective view of used whirligig in a third embodiment in accordance with the invention;
Fig. 6 b is wafer initial position vertical view in the used whirligig in the 3rd embodiment, shows the rotation path of wafer;
Fig. 7 removes vertical view behind the support cover according to the used whirligig of first to the 3rd embodiment of the present invention;
Fig. 8 is according to the location drawing of rotary middle point on wafer among first to the 3rd embodiment of the present invention.
Embodiment
For helping to understand the present invention, the present invention is done further detailed elaboration below in conjunction with relevant drawings.
Fig. 4 a, Fig. 4 b shows the first embodiment of the present invention.Shown in Fig. 4 a, be placed with wafer 101 on the support 1002 in the shell 1001 of container 100, wafer 101 is fixed on the support 1002 by pin 102, the driving shaft 104 of drive motors 103 passes shell 1001 and cooperates with support 1002, before wafer is cleaned, at first, support 1002 and support cover 1004 are fastened togather, thereby shell 1001 and jacket 1003 are fastened togather by the draw-in groove 105 on the support 1002 and the engagement of the buckle 106 on the support cover 1004.When motor driving shaft 104 is driven by drive motors 103 and during rotation, driving shaft 104 drives supports 1002 and rotates, thereby make wafer 101 on the support 1002 around its centre point O 101Rotation (is that wafer 101 is around centre point O 101Rotation), in this case, wafer 101 centre point O 101Slewing rate be zero.But simultaneously, owing to drive motors 103 itself also is designed to around the central point O of the shell 1001 of container 100 1001Place axle X 1001Move in a circle, and be designed to the radius R of shell 1001 1001Radius R greater than wafer 101 101But less than radius R 1012 times (be R 101<R 1001<2R 101, also promptly be designed to the central point O of shell 1001 1001Place axle X 1001Pass in the wafer 101), thus the centre point O of wafer 101 made 101Central point O around shell 1001 1001Carry out circular motion, and form movement locus C 101, cause wafer 101 in rotation also around central point O 1001Place axle X 1001Revolve round the sun, formed the rotational trajectory C of wafer 101 101Since the rotation and the revolution of wafer, wafer centre point O 100The slewing rate at place no longer is zero, i.e. a bit all rotating with non-vanishing speed arbitrarily on the wafer 101.Therefore, in the process that wafer is cleaned, the every bit on the wafer can both be cleaned totally.
Therefore, the cleaning method of the semiconductor wafer that first embodiment provides comprises the steps: 1) make wafer carry out rotation around its centre point, wafer certain outside the centre point on it is a bit revolved round the sun; 2) cleaning fluid is transported to wafer surface; 3) wafer surface is cleaned; 4) cleaning fluid is removed from wafer surface.
Fig. 5 a, Fig. 5 b shows the second embodiment of the present invention.Shown in Fig. 5 a, be placed with wafer 201 on the support 2002 in the shell 2001 of container 200, wafer 201 is fixed on the support 2002 by pin 202, the driving shaft 204 of drive motors 203 passes shell 2001 and cooperates with support 2002, before wafer is cleaned, at first, support 2002 and support cover 2004 are fastened togather, thereby shell 2001 and jacket 2003 are fastened togather by the draw-in groove 205 on the support 2002 and the engagement of the buckle 206 on the support cover 2004.When motor driving shaft 204 is driven by drive motors 203 and during rotation, driving shaft 204 drives supports 2002 and rotates, thereby make wafer 201 on the support 2002 around its centre point O 201Rotation (is that wafer 201 is around centre point O 201Rotation), in this case, wafer 201 centre point O 201Slewing rate be zero.But simultaneously, owing to drive motors 203 itself also is designed to around the central point O of the shell 2001 of container 200 2001Place axle X 2001Move in a circle, and be designed to the central point O of shell 2001 2001Place axle X 2001Pass the outward flange of wafer 201, thereby make the centre point O of wafer 201 201Central point O around shell 2001 2001Carry out circular motion, and form movement locus C 201, cause wafer 201 in rotation also around central point O 2001Place axle X 2001Revolve round the sun, formed the rotational trajectory C of wafer 201 201Since the rotation and the revolution of wafer, wafer centre point O 200The slewing rate at place no longer is zero, i.e. a bit all rotating with non-vanishing speed arbitrarily on the wafer 201.Therefore, in the process that wafer is cleaned, the every bit on the wafer can both be cleaned totally.
Therefore, the cleaning method of the semiconductor wafer that second embodiment provides comprises the steps: 1) make wafer carry out rotation around its centre point, wafer certain on its outward flange is a bit revolved round the sun; 2) cleaning fluid is transported to wafer surface; 3) wafer surface is cleaned; 4) cleaning fluid is removed from wafer surface.
Fig. 6 a, Fig. 6 b shows the third embodiment of the present invention.Shown in Fig. 6 a, be placed with wafer 301 on the support 3002 in the shell 3001 of container 300, wafer 301 is fixed on the support 3002 by pin 302, the driving shaft 304 of drive motors 303 passes shell 3001 and cooperates with support 3002, before wafer is cleaned, at first, support 3002 and support cover 3004 are fastened togather, thereby shell 3001 and jacket 3003 are fastened togather by the draw-in groove 305 on the support 3002 and the engagement of the buckle 306 on the support cover 3004.When motor driving shaft 304 is driven by drive motors 303 and during rotation, driving shaft 304 drives supports 3002 and rotates, thereby make wafer 301 on the support 3002 around its centre point O 301Rotation (is that wafer 301 is around centre point O 301Rotation), in this case, wafer 301 centre point O 301Slewing rate be zero.But simultaneously, owing to drive motors 303 itself also is designed to around the central point O of the shell 3001 of container 300 3001Place axle X 3001Move in a circle, and be designed to the radius R of shell 3001 3001Radius R greater than wafer 301 3012 times (be R 3001>2R 301, also promptly be designed to the central point O of shell 3001 3001Place axle X 3001It is outer to be positioned at wafer 301), thus the centre point O of wafer 301 made 301Central point O around shell 3001 3001Carry out circular motion, and form movement locus C 301, cause wafer 301 in rotation also around central point O 3001Place axle X 3001Revolve round the sun, formed the rotational trajectory C of wafer 301 301Since the rotation and the revolution of wafer, wafer centre point O 300The slewing rate at place no longer is zero, i.e. a bit all rotating with non-vanishing speed arbitrarily on the wafer 301.Therefore, in the process that wafer is cleaned, the every bit on the wafer can both be cleaned totally.
Therefore, the cleaning method of the semiconductor wafer that the 3rd embodiment provides comprises the steps: 1) make wafer carry out rotation around its centre point, wafer certain outside it is a bit revolved round the sun; 2) cleaning fluid is transported to wafer surface; 3) wafer surface is cleaned; 4) cleaning fluid is removed from wafer surface.
Fig. 7 is the vertical view after the used whirligig of first to the 3rd embodiment of the present invention removes the support cover.As can be seen from Figure 7, compared with prior art, it is big that the shell sizes of container becomes, and makes the space between support and the shell become big, and this space becomes greatly gradually from first embodiment to the, three embodiment, to adapt to the entire path that is produced according to the inventive method runing rest.The drive motors and the motor shaft that drive the rotation of support and wafer are arranged on base bottom.In practical operation, drive motors and motor shaft also can be arranged on jacket inside.
Fig. 8 is according to the central point of wafer revolution among first to the 3rd embodiment of the present invention location drawing with respect to wafer.As can be seen from Figure 8, the revolution center of above-mentioned first, second, third embodiment point is respectively a bit a bit and the circumference on a bit (except that centre point), circumference in the circumference.
The technical staff of the industry should be appreciated that under the prerequisite that does not break away from spirit of the present invention or principal character, the present invention can implement with other form.Here cited example and embodiment just for full-time instruction the present invention rather than restriction the present invention, the invention is not restricted to detailed description provided herein.

Claims (5)

1. the cleaning method of a semiconductor wafer comprises:
1) rotation wafer, and the every bit on it is all rotated with the speed greater than zero; 2) cleaning fluid is transported to wafer surface; 3) wafer surface is cleaned; 4) cleaning fluid is removed from wafer surface.
2. the method for claim 1 is characterized in that, described step 1) comprises the steps: also a) that except that the centre point of wafer the optional position on wafer or outside the wafer is a little selected, is used as the rotary middle point of center wafer; B) make wafer carry out rotation around its centre point; C) central point of wafer outside its centre point revolved round the sun.
3. method as claimed in claim 2 is characterized in that, selects any some central point as step a) on the wafer excircle inside radius, and the wafer center of circle is rotated around this central point.
4. method as claimed in claim 2 is characterized in that, selects any some central point as step a) on the wafer excircle, and the wafer center of circle is rotated around this central point.
5. method as claimed in claim 2 is characterized in that, selects outer any some central point as step a) of wafer excircle, and the wafer center of circle is rotated around this central point.
CNB2005100258118A 2005-05-13 2005-05-13 Method for cleaning semiconductor wafer Expired - Fee Related CN100362629C (en)

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Application Number Priority Date Filing Date Title
CNB2005100258118A CN100362629C (en) 2005-05-13 2005-05-13 Method for cleaning semiconductor wafer

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Application Number Priority Date Filing Date Title
CNB2005100258118A CN100362629C (en) 2005-05-13 2005-05-13 Method for cleaning semiconductor wafer

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CN1862775A CN1862775A (en) 2006-11-15
CN100362629C true CN100362629C (en) 2008-01-16

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Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4994501B2 (en) 2007-12-10 2012-08-08 エーシーエム リサーチ (シャンハイ) インコーポレーテッド Semiconductor wafer cleaning method and apparatus
CN109304318A (en) * 2018-11-30 2019-02-05 上海华力微电子有限公司 A kind of wafer cleaning device and cleaning method
CN115254752A (en) * 2022-08-10 2022-11-01 常州星宇车灯股份有限公司 Stain cleaning system of vehicle-mounted camera and using method thereof
CN117736809A (en) * 2023-11-06 2024-03-22 浙江众益电源有限公司 Cleaning agent for semiconductor, preparation method and cleaning method

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08148459A (en) * 1994-11-18 1996-06-07 Toshiba Corp Cleaning method of semiconductor substrate
EP0842738A2 (en) * 1996-11-15 1998-05-20 Ebara Corporation Method of and apparatus for polishing and cleaning planar workpiece
CN1391263A (en) * 2001-06-13 2003-01-15 日本电气株式会社 Washing water and method for cleaning wafers
US20030139048A1 (en) * 2002-01-24 2003-07-24 International Business Machines Corporation CMP slurry additive for foreign matter detection
CN1444256A (en) * 2002-03-11 2003-09-24 松下电器产业株式会社 Method and device for washing base plate

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08148459A (en) * 1994-11-18 1996-06-07 Toshiba Corp Cleaning method of semiconductor substrate
EP0842738A2 (en) * 1996-11-15 1998-05-20 Ebara Corporation Method of and apparatus for polishing and cleaning planar workpiece
CN1391263A (en) * 2001-06-13 2003-01-15 日本电气株式会社 Washing water and method for cleaning wafers
US20030139048A1 (en) * 2002-01-24 2003-07-24 International Business Machines Corporation CMP slurry additive for foreign matter detection
CN1444256A (en) * 2002-03-11 2003-09-24 松下电器产业株式会社 Method and device for washing base plate

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Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING

Effective date: 20111123

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Effective date of registration: 20111123

Address after: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18

Co-patentee after: Semiconductor Manufacturing International (Beijing) Corporation

Patentee after: Semiconductor Manufacturing International (Shanghai) Corporation

Address before: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18

Patentee before: Semiconductor Manufacturing International (Shanghai) Corporation

CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20080116

Termination date: 20180513