CN100359709C - High power and quick heat radiating light emitting diode in white light - Google Patents
High power and quick heat radiating light emitting diode in white light Download PDFInfo
- Publication number
- CN100359709C CN100359709C CNB200510050015XA CN200510050015A CN100359709C CN 100359709 C CN100359709 C CN 100359709C CN B200510050015X A CNB200510050015X A CN B200510050015XA CN 200510050015 A CN200510050015 A CN 200510050015A CN 100359709 C CN100359709 C CN 100359709C
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- China
- Prior art keywords
- light emitting
- emitting diode
- luminous element
- heat radiation
- substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
The present invention discloses a high power light emitting diode in white light, which comprises a base plate made of materials with high heat conductivity and an LED light emitting body fixed on the base plate. The high power light emitting diode in white light is characterized in that the periphery of the light emitting body on the base plate is provided with a plurality of heat radiation through holes, and the edge of the base plate is provided with a plurality of heat radiation corners. The high power light emitting diode in white light has the advantages of simple structure, low manufacture cost, good heat radiation effect, etc., and the high power light emitting diode with the power of 1 W does not need a second time of heat radiation on the base plate with the area of about 8 square centimeters.
Description
Technical field
The present invention relates to a kind of large-power light-emitting diodes, specifically a kind of white light large-power light-emitting diodes with rapid heat radiation device.
Background technology
The powerful light emitting diode LED lighting equipment of white light has appearred on the market in recent years.Great power LED produces bigger heat, and equipment has to move under higher working temperature.Higher working temperature has reduced the performance of high-power LED (light emitting diode) lighting equipment.Experiment shows, in fact can reach 100,000 hours the useful life of LED down in room temperature (25 ℃), and in about 90 ℃ of work down, may be reduced to less than 7000 hours the useful life of LED.In addition, the skew that will produce colour temperature of the working temperature of powerful light-emitting diode, influence illumination above 85 ℃.Therefore, the heat dissipation technology of the powerful light-emitting diode of white light becomes the key of the powerful light emitting diode LED lighting equipment of white light.The patent No. is 03202126, and denomination of invention discloses a kind of high-power light emitting diode construction for the Chinese patent of " high-power light emitting diode construction ", and it includes thermal column and printed circuit board (PCB); Wherein the upper fixed of this thermal column has luminescence chip, this printed circuit board (PCB) is arranged on the periphery of this luminescence chip, it is provided with several conducting strips, can be beneficial to and this luminescence chip routing, conducting, and this thermal column is to make by the heat conduction good metal is one-body molded, and the heat that this luminescence chip sent can be discharged fast by this thermal column, and then improve the luminous power of light-emitting diode.The patent No. is 02247707, and denomination of invention discloses the another kind of high-power light emitting diode that adds radiator structure that has for the Chinese patent of " having the high-power light emitting diode that adds radiator structure ".It comprises is with the high-power light emitting diode of resin/transparent packaging material encapsulating structure and covers to use in high-power light emitting diode outside and absorb and discharge the radiator structure that the high-power light emitting diode discharges heat energy; High-power light emitting diode system is made of matrix, the illuminating part that is convexly set in matrix and a plurality of pin of being located at the matrix both sides.The weak point of above technology is that radiator structure is huge, has caused the rising of lighting apparatus manufacturing cost, also is unfavorable for the installation on lighting apparatus.
Summary of the invention
The objective of the invention is to overcome the deficiency of prior art, a kind of white light large-power light-emitting diodes with rapid heat radiation device is provided.It is simple in structure, and on as far as possible little substrate better radiating effect is arranged.
The present invention's technical scheme that is adopted that achieves the above object is:
A kind of white light large-power light-emitting diodes, comprise high thermal conductivity material substrate, be fixed on the LED luminous element on the described substrate, it is characterized in that: described substrate the above luminous element around a plurality of heat radiation through holes are arranged, at described substrate edges a plurality of heat radiations angle is arranged.
The technical scheme that the present invention can also adopt is:
Around being arranged in radiating area, described radiating area comprises internal layer radiating area and the described luminous element of the distance outer radiating area far away that the described luminous element of distance is nearer to described heat radiation through hole around described luminous element.
Described heat radiation angle is 6～8.
Described high thermal conductivity material is aluminium or pottery.
Also have electrode lead hole on described substrate, the contact conductor of described luminous element can pass the back side that described electrode lead hole is connected in substrate.
Because the present invention has taked above-mentioned technical measures, it compared with prior art has following advantage:
1, simple in structure, easy to implement;
2, good heat dissipation effect: be about on 8 square centimeters of substrates at area, power is that the large-power light-emitting diodes of 1W does not need the secondary heat radiation;
3, hole pattern before and after electrode of substrate adopts has been brought convenience to the user, has also reduced cost.
Description of drawings
Fig. 1 is the structural representation of the embodiment of the invention.
Embodiment
Below in conjunction with accompanying drawing the present invention is described in further detail.
With reference to Fig. 1, the present invention includes aluminium base 1 and be close to the white light great power LED luminous element 4 that is encapsulated in substrate 1 central authorities.The thickness of aluminium base 1 is 2 millimeters, and area is about 8 square centimeters.Several heat radiation through holes 2 are arranged around the luminous element 4 on substrate 1.The heat radiation through hole 2 luminous element 4 around around being arranged in radiating area.Described radiating area is preferably 2, comprises the outer radiating area of also being made up of 16 through holes 2 that dispel the heat 8 that the described luminous element of internal layer radiating area of being made up of 16 heat radiation through holes 27 that the described luminous element of distance 4 is nearer and distance 4 is far away.Several heat radiation angles 5 are arranged at substrate 1 edge.Heat radiation angle 5 is preferably 8, and promptly the outer rim of substrate 1 is an octangle.Facts have proved that the radiating efficiency at through hole and angle is higher.When 4 work of white light high-power light-emitting body, near luminous element 4, produce the high-temperature region.The heat of high-temperature region is by aluminium base 1 peritropous low-temperature space conduction.Because the periphery at heat radiation through hole 2 and heat radiation angle 5 produces free convection, the heat that the high-temperature region conduction is come constantly is dispersed in the external environment condition fast, has formed stable low-temperature space.The heat conduction velocity of high-temperature region to low-temperature space quickened in the generation of the temperature difference, makes substrate 1 central authorities not form thermal resistance, also do not form high temperature, guarantees the work of white light large-power light-emitting diodes long-term stability.To take away the heat that the conduction of most of high-temperature region is come by the internal layer radiating area 7 that several heat radiation through holes 2 are formed, remaining heat will arrive the outer radiating area of being made up of several heat radiation through holes 28, be taken away by outer radiating area 8.The heat of crossing outer radiating area 8 will arrive substrate 1 edge, will be dispersed in the external environment condition by the heat radiation angle 5 at substrate 1 edge.Also have electrode lead hole 3 on substrate 1, ceramic insulating tube is inserted in the electrode lead hole 3, the contact conductor 6 of drawing from luminous element 4 passes ceramic insulating tube on the electrode lead hole 3, is welded on the back side of substrate 1.Contact conductor 6 can be made of copper wire.Substrate 1 also useful ceramics is made, and better radiating effect is arranged.
Claims (2)
1, a kind of white light large-power light-emitting diodes, the substrate (1) that comprises high thermal conductivity material, be fixed on the LED luminous element (4) on the described substrate (1), it is characterized in that: described substrate (1) the above LED luminous element (4) around a plurality of heat radiation through holes (2) are arranged, at described substrate (1) edge a plurality of heat radiations angle (5) is arranged, around being arranged in radiating area, described radiating area comprises internal layer radiating area (7) and distance described LED luminous element (4) the outer radiating area (8) far away that the described LED luminous element of distance (4) is nearer to described heat radiation through hole (2) around described LED luminous element (4).
2, white light large-power light-emitting diodes according to claim 1, it is characterized in that: go up electrode lead hole (3) in addition at described substrate (1), the contact conductor (6) of described LED luminous element (4) can pass the back side that described electrode lead hole (3) is connected in substrate (1).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB200510050015XA CN100359709C (en) | 2005-06-09 | 2005-06-09 | High power and quick heat radiating light emitting diode in white light |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB200510050015XA CN100359709C (en) | 2005-06-09 | 2005-06-09 | High power and quick heat radiating light emitting diode in white light |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1697206A CN1697206A (en) | 2005-11-16 |
| CN100359709C true CN100359709C (en) | 2008-01-02 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB200510050015XA Expired - Fee Related CN100359709C (en) | 2005-06-09 | 2005-06-09 | High power and quick heat radiating light emitting diode in white light |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100359709C (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106449563B (en) * | 2016-11-29 | 2018-11-13 | 卡姆丹克太阳能（江苏）有限公司 | A kind of wafer level packaging with fin structure |
| CN106449443B (en) * | 2016-11-29 | 2019-01-01 | 海安浩驰科技有限公司 | A kind of wafer packaging method with fin structure |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1489201A (en) * | 2002-08-28 | 2004-04-14 | 松下电器产业株式会社 | Semiconductor device |
| US6753553B2 (en) * | 2002-06-17 | 2004-06-22 | Jiahn-Chang Wu | LED matrix substrate with convection holes |
| US20040224148A1 (en) * | 2003-05-08 | 2004-11-11 | Hitoshi Matsunaga | Anisotropically conductive sheet |
| CN2665920Y (en) * | 2003-10-15 | 2004-12-22 | 深圳市世峰科技有限公司 | Heat radiation type PCB heat board |
| CN1627489A (en) * | 2003-12-10 | 2005-06-15 | 玄基光电半导体股份有限公司 | Load supporting base plate for semiconductor chip and fabricating method |
-
2005
- 2005-06-09 CN CNB200510050015XA patent/CN100359709C/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6753553B2 (en) * | 2002-06-17 | 2004-06-22 | Jiahn-Chang Wu | LED matrix substrate with convection holes |
| CN1489201A (en) * | 2002-08-28 | 2004-04-14 | 松下电器产业株式会社 | Semiconductor device |
| US20040224148A1 (en) * | 2003-05-08 | 2004-11-11 | Hitoshi Matsunaga | Anisotropically conductive sheet |
| CN2665920Y (en) * | 2003-10-15 | 2004-12-22 | 深圳市世峰科技有限公司 | Heat radiation type PCB heat board |
| CN1627489A (en) * | 2003-12-10 | 2005-06-15 | 玄基光电半导体股份有限公司 | Load supporting base plate for semiconductor chip and fabricating method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1697206A (en) | 2005-11-16 |
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| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| EE01 | Entry into force of recordation of patent licensing contract |
Assignee: Ningbo Baishi Electrical Appliance Co., Ltd. Assignor: Leideng Illumination Co., Ltd., Ningbo Contract record no.: 2010330001094 Denomination of invention: High power and quick heat radiating light emitting diode in white light Granted publication date: 20080102 License type: Exclusive License Open date: 20051116 Record date: 20100608 |
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| ASS | Succession or assignment of patent right |
Owner name: NINGBO RONGDA INDUSTRY CO., LTD. Free format text: FORMER OWNER: LEIDENG ILLUMINATION CO., LTD., NINGBO Effective date: 20110801 |
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| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20110801 Address after: 315400 Zhejiang Yuyao southeast Industrial Park Ningbo Rong Da Industrial Co., Ltd. Patentee after: Ningbo Rong Da Industrial Co., Ltd. Address before: 315400 west of Central Avenue, Yuyao Economic Development Zone, Zhejiang Patentee before: Leideng Illumination Co., Ltd., Ningbo |
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| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20080102 Termination date: 20130609 |