CN100352001C - Structure for lithography process and method for manufacturing semiconductor component - Google Patents
Structure for lithography process and method for manufacturing semiconductor component Download PDFInfo
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- CN100352001C CN100352001C CNB2003101103882A CN200310110388A CN100352001C CN 100352001 C CN100352001 C CN 100352001C CN B2003101103882 A CNB2003101103882 A CN B2003101103882A CN 200310110388 A CN200310110388 A CN 200310110388A CN 100352001 C CN100352001 C CN 100352001C
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Abstract
The present invention relates to a structure applied to a microimage manufacturing process and a manufacturing method for semiconductor components. The structure applied to a microimage manufacturing process is composed of at least one film layer, one light ray blocking layer, one anti-reflection layer and one photoresistive layer which are orderly collocated on a substrate. In the microimage manufacturing process, the light ray blocking layer can be used for preventing light rays from penetrating the bottom film layer. In the present invention, the light ray blocking layer is collocated below the light resistor layer, and thereby, exposed light rays can not penetrate the film layer below the photoresistive layer and can not be reflected from the surface of the substrate. In other words, the variation of the thickness of the film layer below the photoresistive layer can not affect the key dimension of the microimage manufacturing process, and thereby, the present invention is more suitable for being used.
Description
Technical field
The present invention relates to a kind of structure of micro-photographing process and manufacture method of semiconductor element of being applied to, particularly relate to a kind of structure that is applied to micro-photographing process of improving the key size evenness of micro-photographing process, and the manufacture method of using the semiconductor element of this structure.
Background technology
In the manufacture process of semiconductor element, need to carry out micro-photographing process repeatedly usually, so micro-photographing process is considerable processing procedure for semiconductor element.For instance, in the processing procedure of integrated circuit, the accuracy of micro-photographing process is one of the maximal density of decision-making circuit and factor of final reliability.In addition, micro-photographing process also is quite important for the metal level of transistor AND gate interconnect and the location and the consistency thereof of connector.
But in existing traditional micro-photographing process, normal because of photoresistance can't absorb the incident light of exposure light source fully, and cause the incident light of part to penetrate photoresist layer and reflect reverberation by substrate.At this moment, reverberation just may produce constructive with incident light or destruction interference and produce standing wave, so will make the patterned light blockage layer profile not good.
In order to address the above problem, existing known techniques is to form one deck anti-reflecting layer (being between photoresist layer and the rete) under the photoresist layer, penetrates the exposure light of photoresist layer in order to absorption, to improve the problem that above-mentioned reverberation and incident interference of light are caused.And the material of anti-reflecting layer dielectric material such as silicon nitride, silicon oxynitride normally, or other has the organic material of absorbent properties.
Yet the absorption coefficient of light of these materials is enough absorbing most incident light, therefore still have the incident light of part can penetrate anti-reflecting layer with and the rete of below and from the substrate surface reflection, interfere and produce with incident light.And when the thickness of the rete under the anti-reflecting layer changed, (Critical Dimension CD) also can and then change, and have the inconsistent problem of key size evenness the critical size of photoresistance pattern.
This shows that above-mentioned existing application still has many defectives in the structure of micro-photographing process and the manufacture method of semiconductor element, and demands urgently further being improved.In order to solve the defective of existing application in the manufacture method of the structure of micro-photographing process and semiconductor element, relevant manufacturer there's no one who doesn't or isn't seeks solution painstakingly, but do not see always that for a long time suitable design finished by development, this obviously is the problem that the anxious desire of relevant dealer solves.
Because the defective that above-mentioned existing application exists in the manufacture method of the structure of micro-photographing process and semiconductor element, the inventor is based on being engaged in this type of product design manufacturing abundant for many years practical experience and professional knowledge, actively studied innovation, in the hope of founding a kind of new structure that is applied to micro-photographing process and the manufacture method of semiconductor element, can improve general existing application in the structure of micro-photographing process and the manufacture method of semiconductor element, make it have more practicality.Through constantly research, design, and after studying sample and improvement repeatedly, create the present invention who has practical value finally.
Summary of the invention
The objective of the invention is to, overcome the defective of above-mentioned existing application in the structure existence of micro-photographing process, and provide a kind of novel structure that is applied to micro-photographing process, technical problem to be solved is to make its light of blocks exposure fully, make it penetrate rete and arrive substrate surface, therefore the variation of the thicknesses of layers under the photoresist layer will can not influence the critical size of micro-photographing process, thereby be suitable for practicality more, and have the value on the industry.
Another object of the present invention is to, overcome the defective of the manufacture method existence of conventional semiconductor element, a kind of manufacture method of new semiconductor element is provided, technical problem to be solved is to make it can utilize above-mentioned micro-photographing process to make semiconductor element, and can improve the key size evenness of element, thereby be suitable for practicality more.
The object of the invention to solve the technical problems realizes by the following technical solutions.According to a kind of structure that is applied to micro-photographing process that the present invention proposes, it comprises: a substrate has been formed with at least one rete in this substrate; One light barrier layer is disposed in this substrate, and covers those retes; One anti-reflecting layer is disposed on this light barrier layer; And a photoresist layer, be disposed on this anti-reflecting layer.
The object of the invention to solve the technical problems also can be applied to the following technical measures to achieve further.
The aforesaid structure that is applied to micro-photographing process, the absorption coefficient of light of wherein said light barrier layer is greater than 1.8.
The aforesaid structure that is applied to micro-photographing process, the material of wherein said light barrier layer comprises electric conducting material.
The aforesaid structure that is applied to micro-photographing process, the material of wherein said light barrier layer comprises metal material.
The aforesaid structure that is applied to micro-photographing process, the material of wherein said anti-reflecting layer comprises an organic material.
The aforesaid structure that is applied to micro-photographing process, the material of wherein said anti-reflecting layer comprises an inorganic material.
The object of the invention to solve the technical problems also adopts following technical scheme to realize.The manufacture method of a kind of semiconductor element that proposes according to the present invention, it may further comprise the steps at least: a substrate is provided, is formed with at least one rete, a light barrier layer, an anti-reflecting layer and a photoresist layer in this substrate in regular turn; Carry out a micro-photographing process with this photoresist layer of patterning, and this anti-reflecting layer of part is come out; And serve as cover curtain with this patterned light blockage layer, this anti-reflecting layer of patterning, this light barrier layer and this rete, and in this rete, form an opening.
The object of the invention to solve the technical problems also can be applied to the following technical measures to achieve further.
The manufacture method of aforesaid semiconductor element, the method of this anti-reflecting layer of wherein said patterning, this light barrier layer and this rete comprises carries out an etch process, and in this etch process, the etch-rate of this rete is greater than the etch-rate of this light barrier layer.
The manufacture method of aforesaid semiconductor element, in the wherein said etch process, the anti-reflecting layer of this patterned light blockage layer and this patterning can be removed simultaneously.
The manufacture method of aforesaid semiconductor element, wherein after forming this opening, it more comprises: remove this patterned light blockage layer and this anti-reflecting layer; In this substrate, form a material layer, and cover this light barrier layer and fill up this opening; And serve as to grind stop layer to carry out a cmp processing procedure with this light barrier layer, remove this material layer that is covered on this light barrier layer.
The object of the invention to solve the technical problems also adopts following technical scheme to realize.The manufacture method of a kind of semiconductor element that proposes according to the present invention may further comprise the steps: a substrate is provided, is formed with at least one rete, a light barrier layer, an anti-reflecting layer and a photoresist layer in this substrate in regular turn at least; Carry out a micro-photographing process, expose this anti-reflecting layer of part with this photoresist layer of patterning; With this patterned light blockage layer is the cover curtain, this anti-reflecting layer of patterning and this light barrier layer; Remove the anti-reflecting layer of this patterned light blockage layer and this patterning; And serve as that cover curtain carries out an etch process with this light barrier layer, in this rete, form an opening.
The object of the invention to solve the technical problems also can be applied to the following technical measures to achieve further.
The manufacture method of aforesaid semiconductor element, wherein after forming those openings, it more comprises: form a material layer in this substrate, and cover this light barrier layer and fill up this opening; And serve as to grind stop layer to carry out a cmp processing procedure with this light barrier layer, remove this material layer that is covered on this light barrier layer.
The manufacture method of aforesaid semiconductor element, in the wherein said etch process, the etch-rate of this rete is greater than the etch-rate of this light barrier layer.
The present invention compared with prior art has tangible advantage and beneficial effect.By above technical scheme as can be known, in order to reach aforementioned goal of the invention, major technique of the present invention thes contents are as follows:
The present invention proposes a kind of structure that is applied to micro-photographing process, and this structure comprises a substrate, and has been formed with at least one rete in the substrate.In addition, also dispose light barrier layer, anti-reflecting layer and photoresist layer in this substrate in regular turn.Wherein, the light barrier layer is in order to stop light, to make light can not penetrate its inside.In one embodiment, the absorption coefficient of light of light barrier layer is greater than 1.8, and can effectively reduce the light that is transmitted through substrate in the micro-photographing process.
The present invention also proposes a kind of manufacture method of semiconductor element, and this method is that a substrate is provided earlier, and be formed with at least one rete in regular turn in the substrate, light barrier layer, anti-reflecting layer and photoresist layer.Then carry out micro-photographing process with the patterning photoresist layer, and the anti-reflecting layer of part is come out.Then with patterned light blockage layer as cover curtain so that patterning anti-reflecting layer and light barrier layer, and in suprabasil rete, form opening.
The present invention more proposes a kind of manufacture method of semiconductor element, and this method is that a substrate is provided earlier, and be formed with at least one rete in regular turn in the substrate, light barrier layer, anti-reflecting layer and photoresist layer.Then carry out micro-photographing process with the patterning photoresist layer, and the anti-reflecting layer of part is come out.Then with patterned light blockage layer as cover curtain, with patterning anti-reflecting layer and light barrier layer.Remove the anti-reflecting layer of patterned light blockage layer and patterning afterwards again.Serve as that the cover curtain carries out an etch process with the light barrier layer afterwards, in rete, to form opening.
Via as can be known above-mentioned, the invention relates to a kind of structure of micro-photographing process and manufacture method of semiconductor element of being applied to.The structure that this is applied to micro-photographing process is formed by being configured in a suprabasil at least one rete, a light barrier layer, an anti-reflecting layer and a photoresist layer in regular turn.In micro-photographing process, the light barrier layer can be in order to stop that light penetration is to beneath rete.In the present invention, because of under the photoresist layer being disposes the light barrier layer,, the light of exposure reflects by substrate surface again so just can't penetrating the beneath rete of photoresist layer.In other words, the variation of the thicknesses of layers under the photoresist layer will can not influence the critical size of micro-photographing process.
By technique scheme, the present invention has the following advantages at least: in the above-mentioned structure that is applied to micro-photographing process, dispose the light barrier layer because under the photoresist layer be, therefore the light of exposure just can't penetrate the beneath rete of photoresist layer and reflected by substrate surface, in other words, the variation of the thicknesses of layers under the photoresist layer will can not influence the critical size of micro-photographing process.
In addition, in the processing procedure of follow-up formation semiconductor element, because the uniformity of the critical size of micro-photographing process has obtained control, therefore can be so that the uniformity of the critical size of element is improved.And the light barrier layer of said structure also can be used as etch stop layer or the usefulness of grinding stop layer.
In sum, the structure that is applied to micro-photographing process that the present invention is special and the manufacture method of semiconductor element, the light of blocks exposure fully, make it penetrate rete and arrive substrate surface, therefore the variation of the thicknesses of layers under the photoresist layer will can not influence the critical size of micro-photographing process, thereby be suitable for practicality more.It has above-mentioned many advantages and practical value, and in like product and manufacture method, do not see have similar structural design and method to publish or use and really genus innovation, no matter it is at product structure, bigger improvement is all arranged on manufacture method or the function, have large improvement technically, and produced handy and practical effect, and has the multinomial effect of enhancement in the structure of micro-photographing process and the manufacture method of semiconductor element than existing application, thereby be suitable for practicality more, and have the extensive value of industry, really be a novelty, progressive, practical new design.
Above-mentioned explanation only is the general introduction of technical solution of the present invention, for can clearer understanding technological means of the present invention, and can be implemented according to the content of specification, below with preferred embodiment of the present invention and conjunction with figs. describe in detail as after.
Description of drawings
Figure 1A to Fig. 1 E is a kind of flow process and section of structure that forms the contact hole of metal interconnect of a preferred embodiment of the present invention.
Fig. 2 A to Fig. 2 B is a kind of part flow process and section of structure that forms the contact hole of metal interconnect of another preferred embodiment of the present invention.
100: substrate 102: dielectric layer
104: light barrier layer 104a: the light barrier layer of patterning
106: anti-reflecting layer 106a: the anti-reflecting layer of patterning
108; Photoresist layer 108a; Patterned light blockage layer
110: opening 112: material layer
114: contact hole
Embodiment
Below in conjunction with accompanying drawing and preferred embodiment, the structure that is applied to micro-photographing process that foundation the present invention is proposed and its concrete structure of manufacture method, manufacture method, step, feature and the effect thereof of semiconductor element, describe in detail as after.
To be example below, specify micro-photographing process of the present invention with the processing procedure of the contact hole of metal interconnect, and the structure that is applied to this micro-photographing process, and utilize this structure to form the manufacture process of contact hole.
Figure 1A to Fig. 1 E is a kind of flow process and section of structure that forms the contact hole of metal interconnect of a preferred embodiment of the present invention.At first see also shown in Figure 1A, the structure that is applied to micro-photographing process of preferred embodiment of the present invention and the manufacture method of semiconductor element at first form dielectric layer 102, light barrier layer 104, anti-reflecting layer 106 and photoresist layer 108 in regular turn in substrate 100.Wherein, dielectric layer 102 for example is as the inner layer dielectric layer in the metal interconnect, and for example is to be formed with a plurality of semiconductor element (not shown) and other rete (not shown) between itself and the substrate 100.
The absorption coefficient of light of light barrier layer 104 for example is greater than 1.8, and its material can be metal material or other electric conducting material, for example is that polycrystalline is siliceous, tungsten or aluminium etc.And the material of anti-reflecting layer 106 for example is silicon nitride or silicon oxynitride, or other is suitable for the organic material of anti-reflecting layer.
See also shown in Figure 1B, then carry out a micro-photographing process,, and make the anti-reflecting layer 106 of part come out with formation patterned light blockage layer 108a with photoresist layer 108 patternings.
Specifically, in this micro-photographing process, anti-reflecting layer 106 can be absorbed in the part light that penetrates photoresist layer 108 in the exposure manufacture process, and the light of failing to be absorbed by anti-reflecting layer 106 will can't be continued to penetrate toward under after arriving light barrier layer 104 by obstruct.On the one hand, because light barrier layer 104 itself has higher absorption coefficient, therefore can absorb the light that penetrates anti-reflecting layer 106, on the other hand, light barrier layer 104 also can light reflected back anti-reflecting layer 106 with part in, and make light being absorbed once more in anti-reflecting layer 106.Therefore, light barrier layer 104 can be so that light can't penetrate into the dielectric layer 102 under it, and is gone out by substrate 100 surface reflections again.Therefore, the variation of dielectric layer 102 thickness under the photoresist layer 108 will can not influence the critical size of micro-photographing process, thereby can promote the uniformity of the critical size of micro-photographing process.
In above-mentioned structure, light barrier layer 104 is except stopping the light, and it can also now be described in detail as follows as etch stop layer and the usefulness of grinding stop layer in successive process.
See also shown in Fig. 1 C, carry out an etch process as the cover curtain,, and in dielectric layer 102, form a plurality of contact windows 110 with the anti-reflecting layer 106a and the light barrier layer 104a of formation patterning with this patterned light blockage layer 108a.
It should be noted that, though the patterned light blockage layer 108a of etching part thickness simultaneously in this etch process, or even the anti-reflecting layer 106a of the patterning of segment thickness, patterned light blockage layer 108a and anti-reflecting layer 106a can be etched fully what is more.But because the material of light barrier layer 104 used in the present invention for example is metal or polysilicon, therefore the etch-rate of dielectric layer 102 is much larger than the etch-rate of light barrier layer 104, even therefore the anti-reflecting layer 106a of patterned light blockage layer 108a and patterning is all etched away fully, the light barrier layer 104a of patterning still can make the dielectric layer 102 can be being patterned completely as etch mask, and forms contact window 110.
See also shown in Fig. 1 D, remove the anti-reflecting layer 106a of patterned light blockage layer 108a and patterning.Wherein, if the material of the anti-reflecting layer 106a of patterning is an organic material, then can in the processing procedure of removing photoresistance, remove the anti-reflecting layer 106a of patterning simultaneously.If the material of the anti-reflecting layer 106a of patterning is an inorganic material, for example is silicon nitride or silicon oxynitride or the like, then need behind the removing photoresistance processing procedure, to carry out an etch process so that it is removed.On the light barrier layer 104a of patterning, form layer of material layer 112 afterwards again, and fill up contact window 110.Wherein, the material of material layer 112 for example is other electric conducting material that is suitable for such as tungsten, copper.
See also shown in Fig. 1 E, carry out the cmp processing procedure, remove,, promptly finish the processing procedure of contact hole 114 this moment up to the light barrier layer 104a that exposes patterning with the material layer 112 on the light barrier layer 104a that will be covered in patterning.Specifically, in this cmp processing procedure, the light barrier layer 104a of patterning can be used as one and grinds stop layer.
Moreover, when if the size of contact window 110 has the too high problem of depth-to-width ratio, carrying out micro-photographing process with (shown in Figure 1B) after finishing patterned light blockage layer 108a, can form contact window 110 by another processing procedure that is different from the step of the foregoing description, below will be described in detail this method.
Fig. 2 A to Fig. 2 B is a kind of part flow process and section of structure that forms the contact hole of metal interconnect of another preferred embodiment of the present invention.At first see also shown in Fig. 2 A, behind the patterned light blockage layer 108a that forms shown in Figure 1B, then with patterned light blockage layer 108a as the cover curtain, carry out an etch process with the anti-reflecting layer 106a that forms patterning and the light barrier layer 104a of patterning.
See also shown in Fig. 2 B, remove after the anti-reflecting layer 106a of patterned light blockage layer 108a and patterning, the light barrier layer 104a with patterning serves as that the cover curtain carries out an etch process again, to form contact window 110 in dielectric layer 102.At this moment, because the anti-reflecting layer 106a of patterned light blockage layer 108a and patterning was removed before etching dielectric layer 102, thus can reduce depth-to-width ratio, and make opening 110 to form smoothly.
And the follow-up electric conducting material of inserting in contact window 110 to be to form the processing procedure of contact hole, and promptly an as above embodiment described (seeing also the explanation of Fig. 1 D to Fig. 1 E) will repeat no more herein.
From the above, because the light barrier layer can effectively stop light in exposure manufacture process, make light can not be penetrated into its beneath rete, and reflect again, so the variation of the thicknesses of layers under the photoresist layer will can not influence the critical size of micro-photographing process by substrate.And above-mentioned employed light barrier layer can also be in follow-up cmp processing procedure and etch process, as the usefulness of a stop layer.
What be worth paying special attention to is, describe the present invention in detail though two above-mentioned embodiment are processing procedures with the contact hole of metal interconnect, and the non-limiting structure that is applied to micro-photographing process of the present invention only can be used for the contact hole processing procedure.The present invention is not limited the application surface that is applied to the structure of micro-photographing process of the present invention, so long as must use the semiconductor element of micro-photographing process, all can use structure of the present invention to improve its key size evenness.
The above, it only is preferred embodiment of the present invention, be not that the present invention is done any pro forma restriction, though the present invention discloses as above with preferred embodiment, yet be not in order to limit the present invention, any those skilled in the art, in not breaking away from the technical solution of the present invention scope, when the method that can utilize above-mentioned announcement and technology contents are made a little change or be modified to the equivalent embodiment of equivalent variations, but every content that does not break away from technical solution of the present invention, according to technical spirit of the present invention to any simple modification that above embodiment did, equivalent variations and modification all still belong in the scope of technical solution of the present invention.
Claims (13)
1, a kind of structure that is applied to micro-photographing process is characterized in that it comprises:
One substrate has been formed with at least one rete in this substrate, and this rete is to treat etch layer;
One light barrier layer is disposed in this substrate, and covers those retes;
One anti-reflecting layer is disposed on this light barrier layer; And
One photoresist layer is disposed on this anti-reflecting layer.
2, the structure that is applied to micro-photographing process according to claim 1, the absorption coefficient of light that it is characterized in that wherein said light barrier layer is greater than 1.8.
3, the structure that is applied to micro-photographing process according to claim 1 is characterized in that the material of wherein said light barrier layer comprises electric conducting material.
4, the structure that is applied to micro-photographing process according to claim 1 is characterized in that the material of wherein said light barrier layer comprises metal material.
5, the structure that is applied to micro-photographing process according to claim 1 is characterized in that the material of wherein said anti-reflecting layer comprises an organic material.
6, the structure that is applied to micro-photographing process according to claim 1 is characterized in that the material of wherein said anti-reflecting layer comprises an inorganic material.
7, a kind of manufacture method of semiconductor element is characterized in that it may further comprise the steps at least:
One substrate is provided, is formed with at least one rete, a light barrier layer, an anti-reflecting layer and a photoresist layer in this substrate in regular turn;
Carry out a micro-photographing process with this photoresist layer of patterning, and this anti-reflecting layer of part is come out; And
With this patterned light blockage layer is the cover curtain, this anti-reflecting layer of patterning, this light barrier layer and this rete, and in this rete, form an opening.
8, the manufacture method of semiconductor element according to claim 7, the method that it is characterized in that this anti-reflecting layer of wherein said patterning, this light barrier layer and this rete comprises carries out an etch process, and in this etch process, the etch-rate of this rete is greater than the etch-rate of this light barrier layer.
9, the manufacture method of semiconductor element according to claim 8 is characterized in that in the wherein said etch process, the anti-reflecting layer of this patterned light blockage layer and this patterning can be removed simultaneously.
10, the manufacture method of semiconductor element according to claim 7 is characterized in that wherein it more comprises after forming this opening:
Remove this patterned light blockage layer and this anti-reflecting layer;
In this substrate, form a material layer, and cover this light barrier layer and fill up this opening; And
With this light barrier layer serves as to grind stop layer to carry out a cmp processing procedure, removes this material layer that is covered on this light barrier layer.
11, a kind of manufacture method of semiconductor element is characterized in that it may further comprise the steps at least:
One substrate is provided, is formed with at least one rete, a light barrier layer, an anti-reflecting layer and a photoresist layer in this substrate in regular turn;
Carry out a micro-photographing process, expose this anti-reflecting layer of part with this photoresist layer of patterning;
With this patterned light blockage layer is the cover curtain, this anti-reflecting layer of patterning and this light barrier layer;
Remove the anti-reflecting layer of this patterned light blockage layer and this patterning; And
With this light barrier layer serves as that the cover curtain carries out an etch process, forms an opening in this rete.
12, the manufacture method of semiconductor element according to claim 11 is characterized in that wherein it more comprises after forming those openings:
Form a material layer in this substrate, and cover this light barrier layer and fill up this opening; And
With this light barrier layer serves as to grind stop layer to carry out a cmp processing procedure, removes this material layer that is covered on this light barrier layer.
13, the manufacture method of semiconductor element according to claim 11 is characterized in that in the wherein said etch process, the etch-rate of this rete is greater than the etch-rate of this light barrier layer.
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| Application Number | Priority Date | Filing Date | Title |
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| CNB2003101103882A CN100352001C (en) | 2003-12-30 | 2003-12-30 | Structure for lithography process and method for manufacturing semiconductor component |
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| CNB2003101103882A CN100352001C (en) | 2003-12-30 | 2003-12-30 | Structure for lithography process and method for manufacturing semiconductor component |
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| CN1635611A CN1635611A (en) | 2005-07-06 |
| CN100352001C true CN100352001C (en) | 2007-11-28 |
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| US8101530B2 (en) * | 2009-09-25 | 2012-01-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lithography patterning method |
| CN107799417B (en) * | 2016-08-29 | 2021-02-02 | 中芯国际集成电路制造(上海)有限公司 | Method for manufacturing transistor |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5935737A (en) * | 1997-12-22 | 1999-08-10 | Intel Corporation | Method for eliminating final euv mask repairs in the reflector region |
| US6013399A (en) * | 1998-12-04 | 2000-01-11 | Advanced Micro Devices, Inc. | Reworkable EUV mask materials |
| WO2003019290A2 (en) * | 2001-08-24 | 2003-03-06 | Motorola, Inc., A Corporation Of The State Of Delaware | Patterning an integrated circuit using a reflective mask |
| WO2003019291A2 (en) * | 2001-08-24 | 2003-03-06 | Intel Corporation | Damascene extreme ultraviolet lithography alternative phase shift photomask and method of making |
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2003
- 2003-12-30 CN CNB2003101103882A patent/CN100352001C/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5935737A (en) * | 1997-12-22 | 1999-08-10 | Intel Corporation | Method for eliminating final euv mask repairs in the reflector region |
| US6013399A (en) * | 1998-12-04 | 2000-01-11 | Advanced Micro Devices, Inc. | Reworkable EUV mask materials |
| WO2003019290A2 (en) * | 2001-08-24 | 2003-03-06 | Motorola, Inc., A Corporation Of The State Of Delaware | Patterning an integrated circuit using a reflective mask |
| WO2003019291A2 (en) * | 2001-08-24 | 2003-03-06 | Intel Corporation | Damascene extreme ultraviolet lithography alternative phase shift photomask and method of making |
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