CN100351632C - Array type micro-piezoresistive acceleration transducer - Google Patents
Array type micro-piezoresistive acceleration transducer Download PDFInfo
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- CN100351632C CN100351632C CNB2004100408750A CN200410040875A CN100351632C CN 100351632 C CN100351632 C CN 100351632C CN B2004100408750 A CNB2004100408750 A CN B2004100408750A CN 200410040875 A CN200410040875 A CN 200410040875A CN 100351632 C CN100351632 C CN 100351632C
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Abstract
The present invention provides an array type micro-piezoresistive acceleration transducer which comprises eight micro-piezoresistive acceleration transducer sensing units, wherein the micro-piezoresistive acceleration transducer sensing units respectively form a square sensing unit array, a circular sensing unit array and an elliptical sensing unit array according to square, circular and elliptical modes. Each micro-piezoresistive acceleration transducer sensing unit is connected with a peripheral circuit through a lead wire 2, which can respectively form the array type micro-piezoresistive acceleration transducers which are respectively arranged to form a square, a circle and an ellipse. Compared with the existing micro-piezoresistive acceleration transducer, the present invention has the characteristic that the impact acceleration of a high g value can be measured for one time in a high accuracy and high reliability mode. The present invention can be used for measuring the impact acceleration of the high g value, such as the control for detonation of a fuse in a penetration missile to a scheduled target or a penetration weapon for a hard target, vehicle safety air bags, etc.
Description
Technical field
The invention belongs to technical field of electronic components, it specially refers to little piezoresistance type acceleration sensor technology.
Background technology
Little piezoresistance type acceleration sensor is the piezoresistive effect that utilizes sensitive material, and mechanical signal is converted into electric signal.Sensitive material commonly used is a silicon, diffusion resistance on silicon.
At present, the sensing mode of little piezoresistance type acceleration sensor adopts silicon beam-mass block structure mostly, and its principle as shown in Figure 1.Form sensitive element by silicon beam 4 and siliceous gauge block 5, diffusion resistance 3 on beam, under the acceleration effect, mass moves up and down, thereby the silicon beam is produced and the proportional deformation of acceleration, cause the resistance of diffusion resistance on the beam that corresponding the variation taken place, when diffusion resistance during as the brachium pontis of measuring bridge, by the variation of bridge output voltage, realize measurement to acceleration.The common structure form of little piezoresistance type acceleration sensor has single cantilever beam, double cantilever beam and four girder constructions etc., as shown in Figure 2.Wherein, only comprise a sensitive element of forming by silicon beam 4 and siliceous gauge block 5.
The little piezoresistance type acceleration sensor of high g value all is applied in many occasions, particularly militarily, for example controls the penetration ammunition fuze and detonates in predetermined number of layers, hard goal penetration weapon etc.; On civilian, as safe automobile air bag.The little piezoresistance type acceleration sensor of 7270A-200K that U.S. ENDEVCO company produces can be tested the accekeration of 200,000 g, is the higher sensor of present range; Little piezoresistance type acceleration sensor range of domestic production is not seen g values up to ten thousand.And this class acceleration transducer has only a sensitive element of being made up of silicon beam and siliceous gauge block, in case the fracture of mass fragmentation or beam, sensor then can't operate as normal, poor reliability.In addition, because silicon materials are hard brittle materials, under the effect of high g value acceleration, adopt silicon beam-mass block structure form to be difficult to satisfy the strength condition of material, to cause structural failure.
Summary of the invention
The purpose of this invention is to provide the little piezoresistance type acceleration sensor of a kind of array, the characteristics that it has once can high precision, the impact acceleration of high g value is measured on high reliability ground.
In order to describe content of the present invention easily, at first make term definition:
Little piezoresistance type acceleration sensor sensing unit: it is made up of lead-in wire 2, resistance 3, silicon beam 4 and siliceous gauge block 5;
Little piezoresistance type acceleration sensor: it be by little piezoresistance type acceleration sensor sensing unit by go between 2 and peripheral circuit connect to form;
The strong heart girder structure of little piezoresistance type acceleration sensor sensitive element: the xsect of the silicon beam in little piezoresistance type acceleration sensor sensitive element adopts inverted trapezoidal structure, silicon chip in the bottom of inverted trapezoidal structure trapezoid cross section and the little piezoresistance type acceleration sensor sensitive element is connected as a single entity, as shown in Figure 3.
The little piezoresistance type acceleration sensor of a kind of array provided by the invention, it comprises eight little piezoresistance type acceleration sensor sensing units, and described little piezoresistance type acceleration sensor sensing unit can be formed square, the oval-shaped array piezoresistance type acceleration sensor that declines respectively according to square, oval-shaped mode;
The described quadrate array piezoresistance type acceleration sensor that declines is respectively to place a little piezoresistance type acceleration sensor sensing unit on foursquare four angles, on the mid point on foursquare each limit, place a little piezoresistance type acceleration sensor sensing unit respectively, each little piezoresistance type acceleration sensor sensing unit by go between 2 and peripheral circuit connect to form a kind of little piezoresistance type acceleration sensor of array of square arrangement, shown in Fig. 4 (a);
The described oval-shaped array piezoresistance type acceleration sensor that declines is to place a little piezoresistance type acceleration sensor sensing unit on two intersection points of a long axis of ellipse and oval circumference respectively; On two intersection points of minor axis and oval circumference, place a little piezoresistance type acceleration sensor sensing unit respectively; On two intersection points of the straight line of crossing the center of circle that becomes 30 ° of angles with major axis and oval circumference, place a little piezoresistance type acceleration sensor sensing unit respectively; On two intersection points of the straight line of crossing the center of circle that becomes-30 ° of angles with major axis and oval circumference, place a little piezoresistance type acceleration sensor sensing unit respectively, each little piezoresistance type acceleration sensor sensing unit 2 connects to form a kind of little piezoresistance type acceleration sensor of array of oval shaped arrangements with peripheral circuit by going between, shown in Fig. 4 (c).
Need to prove that in order to guarantee that under the high g value impact acceleration effect little piezoresistance type acceleration sensor sensitive element can not destroy because of intensity, little piezoresistance type acceleration sensor sensitive element can adopt strong heart girder structure.
The circular array piezoresistance type acceleration sensor that declines is evenly distributed eight little piezoresistance type acceleration sensor sensing units on the circumference of a circle, each little piezoresistance type acceleration sensor sensing unit 2 connects to form a kind of little piezoresistance type acceleration sensor of array of circular arrangement with peripheral circuit by going between, shown in Fig. 4 (b);
Design concept of the present invention: the little piezoresistance type acceleration sensor of array of the present invention is the characteristic distributions according to the measurand acceleration field, determine factor of influence according to multiple linear regression analysis, damping factor is determined in the nonlinear multivariable regretional analysis, and utilize Orthogonal Experiment and Design to go out the sensor array design layout, thereby guarantee to obtain effective acceleration field information with a spot of number of sensors.Obtain the sensor array design layout shown in Fig. 4 (a) according to linear regression analysis, nonlinear regression analysis obtains the sensor array design layout shown in Fig. 4 (b), (c).
Advantage of the present invention:
The little piezoresistance type acceleration sensor of a kind of array provided by the invention is compared with existing little piezoresistance type acceleration sensor, owing to be to have adopted eight little piezoresistance type acceleration sensor sensing units, each little piezoresistance type acceleration sensor sensing unit is worked under the acceleration effect simultaneously, when wherein certain sensing unit generation fragmentation or phenomenon of rupture, other little piezoresistance type acceleration sensor sensing unit still can continue operate as normal, has improved the reliability of sensor.And each little piezoresistance type acceleration sensor sensing unit is independently exported electric signal, and handling for subsequent conditioning circuit provides high-precision assurance.
Description of drawings
Fig. 1 is existing little piezoresistance type acceleration sensor fundamental diagram
Wherein, the 1st, silicon chip, the 2nd, lead-in wire, the 3rd, resistance, the 4th, silicon beam, the 5th, siliceous gauge block.
Fig. 2 is existing little pressure resistance type acceleration sensor structure synoptic diagram
Wherein, figure (a) is little piezoresistance type acceleration sensor of single-cantilever beam type structure,
Figure (b) is little piezoresistance type acceleration sensor of double cantilever beam formula structure,
Figure (c) is little piezoresistance type acceleration sensor of four girder structures.
Fig. 3 is the strong heart girder structure synoptic diagram of little piezoresistance type acceleration sensor sensitive element of the present invention
Wherein, the 1st, silicon chip, the 4th, silicon beam.
Fig. 4 is an array design domain of the present invention
Wherein, figure (a) is the little piezoresistance type acceleration sensor design layout of array of square arrangement, figure (b) is the little pressure resistance type acceleration sensing of the array design layout of circular arrangement, and figure (c) is the little piezoresistance type acceleration sensor design layout of array of oval shaped arrangements.
Wherein, 6,7,8,9,10,11,12,13,14 expression sensor sensing arrangements of cells points.
Fig. 5 is the structural design drawing of microarray piezoresistance type acceleration sensor of the present invention
Fig. 6 is the test pattern of the specific embodiment of the present invention
Embodiment:
Adopt silicon materials, utilize existing MEMS micro-processing technology, the design layout that provides according to the little piezoresistance type acceleration sensor of the array of square arrangement, eight little piezoresistance type acceleration sensor sensing units are produced on the silicon, each little piezoresistance type acceleration sensor sensing unit is connected with peripheral circuit respectively by lead-in wire 2, form the little piezoresistance type acceleration sensor of array, as shown in Figure 5.The array piezoresistance type acceleration sensor that declines is carried out shock-testing, and testing apparatus is SMAC, and the impact acceleration value is 62500g.Sensor moment meets with a response, and notes the transient waveform of complete impact acceleration, as shown in Figure 6.Fig. 6 has intactly noted the overall process of the loading and the unloading of sensor of the present invention, wherein dotted line is the output waveform of standard transducer under the impact acceleration effect of 62500g in the SMAC equipment, solid line is the output waveform of sensor of the present invention under the impact acceleration effect of 62500g, both high conformities; Sensitivity is 1.32 μ v/g.
Array minute-pressure of the present invention resistance acceleration transducer is mainly used in the impact acceleration of the high g value of test, detonates or hard goal is carried out in the fields such as the weapon of penetration and safe automobile air bag in intended target as controlling fuse in the penetration guided missile.
Claims (2)
1, the little piezoresistance type acceleration sensor of a kind of array, it is characterized in that it comprises eight little piezoresistance type acceleration sensor sensing units, described little piezoresistance type acceleration sensor sensing unit is formed square, the oval-shaped array piezoresistance type acceleration sensor that declines respectively according to square, oval-shaped mode:
The described quadrate array piezoresistance type acceleration sensor that declines is respectively to place a little piezoresistance type acceleration sensor sensing unit on foursquare four angles, place a little piezoresistance type acceleration sensor sensing unit on the mid point on foursquare each limit respectively, each little piezoresistance type acceleration sensor sensing unit connects to form a kind of little piezoresistance type acceleration sensor of array of square arrangement by lead-in wire (2) and peripheral circuit;
The described oval-shaped array piezoresistance type acceleration sensor that declines is to place a little piezoresistance type acceleration sensor sensing unit on two intersection points of a long axis of ellipse and oval circumference respectively; On two intersection points of minor axis and oval circumference, place a little piezoresistance type acceleration sensor sensing unit respectively; On two intersection points of the straight line of crossing the center of circle that becomes 30 ° of angles with major axis and oval circumference, place a little piezoresistance type acceleration sensor sensing unit respectively; Place a little piezoresistance type acceleration sensor sensing unit respectively on two intersection points of the straight line of crossing the center of circle that becomes-30 ° of angles with major axis and oval circumference, each little piezoresistance type acceleration sensor sensing unit connects to form a kind of little piezoresistance type acceleration sensor of array of oval shaped arrangements by lead-in wire (2) and peripheral circuit.
2, the little piezoresistance type acceleration sensor of a kind of array according to claim 1, it is characterized in that described little piezoresistance type acceleration sensor sensitive element adopts strong heart girder structure, described strong heart girder structure is meant: the xsect of the silicon beam in little piezoresistance type acceleration sensor sensitive element adopts inverted trapezoidal structure (4), and the silicon chip (1) in the bottom of the trapezoid cross section of inverted trapezoidal structure and the little piezoresistance type acceleration sensor sensitive element is connected as a single entity.
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| Application Number | Priority Date | Filing Date | Title |
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| CNB2004100408750A CN100351632C (en) | 2004-10-21 | 2004-10-21 | Array type micro-piezoresistive acceleration transducer |
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| Application Number | Priority Date | Filing Date | Title |
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| CNB2004100408750A CN100351632C (en) | 2004-10-21 | 2004-10-21 | Array type micro-piezoresistive acceleration transducer |
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| CN1763549A CN1763549A (en) | 2006-04-26 |
| CN100351632C true CN100351632C (en) | 2007-11-28 |
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| CNB2004100408750A Expired - Fee Related CN100351632C (en) | 2004-10-21 | 2004-10-21 | Array type micro-piezoresistive acceleration transducer |
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Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102193002A (en) * | 2010-03-11 | 2011-09-21 | 苏州敏芯微电子技术有限公司 | Acceleration sensor and manufacturing method thereof |
| CN103184862B (en) * | 2011-12-30 | 2017-12-19 | 国家纳米技术与工程研究院 | A kind of measuring part of three-dimensional MEMS accelerometer for oil well logging and preparation method thereof |
| CN108507425B (en) * | 2018-03-26 | 2019-10-25 | 西安工业大学 | A kind of magnetic susceptibility layer metering device for penetration fuse |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5866817A (en) * | 1995-07-26 | 1999-02-02 | Akebono Brake Industry Co. | Acceleration sensor |
| CN1281986A (en) * | 2000-08-25 | 2001-01-31 | 华北工学院微米纳米技术研究中心 | Integrated silicon microresistance type acceleration sensor and its manufacturing method |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5866817A (en) * | 1995-07-26 | 1999-02-02 | Akebono Brake Industry Co. | Acceleration sensor |
| CN1281986A (en) * | 2000-08-25 | 2001-01-31 | 华北工学院微米纳米技术研究中心 | Integrated silicon microresistance type acceleration sensor and its manufacturing method |
Non-Patent Citations (1)
| Title |
|---|
| 测试10～5g微阵列式加速度传感器 刘晓明.中国机械工程，第14卷第5期 2003 * |
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Assignee: Zhongshan Hongmao Electronics Co., Ltd. Assignor: University of Electronic Science and Technology of China Contract fulfillment period: 2007.11.30 to 2012.11.30 contract change Contract record no.: 2008440000504 Denomination of invention: Array type micro-piezoresistive acceleration transducer Granted publication date: 20071128 License type: Exclusive license Record date: 20081211 |
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Free format text: EXCLUSIVE LICENSE; TIME LIMIT OF IMPLEMENTING CONTACT: 2007.11.30 TO 2012.11.30; CHANGE OF CONTRACT Name of requester: ZHONGSHAN CITY HONGMAO ELECTRONICS CO., LTD. Effective date: 20081211 |
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Granted publication date: 20071128 Termination date: 20101021 |