CN100350239C - Polypyrrol gas sensitive sensor - Google Patents
Polypyrrol gas sensitive sensor Download PDFInfo
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- CN100350239C CN100350239C CNB2005100495185A CN200510049518A CN100350239C CN 100350239 C CN100350239 C CN 100350239C CN B2005100495185 A CNB2005100495185 A CN B2005100495185A CN 200510049518 A CN200510049518 A CN 200510049518A CN 100350239 C CN100350239 C CN 100350239C
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- China
- Prior art keywords
- electrode
- doping
- gas sensitive
- sensitive sensor
- polypyrrol
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- 239000007789 gas Substances 0.000 claims abstract description 31
- 229920000128 polypyrrole Polymers 0.000 claims abstract description 13
- 238000007650 screen-printing Methods 0.000 claims abstract description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 8
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000008367 deionised water Substances 0.000 claims abstract description 5
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 5
- ZOMNIUBKTOKEHS-UHFFFAOYSA-L dimercury dichloride Chemical compound Cl[Hg][Hg]Cl ZOMNIUBKTOKEHS-UHFFFAOYSA-L 0.000 claims abstract description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 4
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 4
- 238000002156 mixing Methods 0.000 claims description 4
- 238000006392 deoxygenation reaction Methods 0.000 claims description 3
- 239000002019 doping agent Substances 0.000 claims description 3
- 150000002500 ions Chemical class 0.000 abstract 2
- 229940075397 calomel Drugs 0.000 abstract 1
- 229910001914 chlorine tetroxide Inorganic materials 0.000 abstract 1
- -1 p-toluene sulfonic acid ions Chemical class 0.000 abstract 1
- JOXIMZWYDAKGHI-UHFFFAOYSA-N p-toluenesulfonic acid Substances CC1=CC=C(S(O)(=O)=O)C=C1 JOXIMZWYDAKGHI-UHFFFAOYSA-N 0.000 abstract 1
- VLTRZXGMWDSKGL-UHFFFAOYSA-M perchlorate Chemical compound [O-]Cl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-M 0.000 abstract 1
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 6
- 239000000178 monomer Substances 0.000 description 3
- 206010013786 Dry skin Diseases 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229920002521 macromolecule Polymers 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
Abstract
The present invention relates to a polypyrrole gas sensitive sensor. The present invention is characterized in that a screen printing electrode with a polypyrrole film of chemical vapor deposition is used as a work electrode, a calomel electrode is used as a reference electrode, and a platinum disk electrode is used as a counter electrode; the electrodes are put in a doping solution which is already deoxidized by nitrogen, and the doping solution contains 0.1M of doping ions such as ClO4<-> ions and p-toluene sulfonic acid ions; electrochemical doping removal for 100 seconds is carried out at-0.5V in set potential, and the electrodes are taken out to be washed and cleaned by deionized water; electrochemical doping for 100 seconds is carried out at 0.6V potential; consequently, the doped polypyrrole gas sensitive sensor is obtained. Compared with the prior art, the present invention has the advantages that the polypyrrole gas sensitive sensor can work at room temperature, and the working performance of the polypyrrole gas sensitive sensor is superior to like sensors which do not realize doping removal and doping.
Description
Technical field
The present invention relates to a kind of polypyrrol gas sensitive sensor.
Background technology
Oxide semiconductor gas sensor commonly used such as SnO
2Gas sensor, general passing through to SnO
2Carry out ion doping and improve its performance.Because the application of oxide semiconductor gas sensor needs higher working temperature (about 300 ℃), so heating element need be set, complex structure and power consumption are also bigger.Conductivity type macromolecule gas sensor can be worked at normal temperatures as polypyrrol gas sensitive sensor, and is low in energy consumption, easy to prepare, become another kind of gas sensor, also improved its gas-sensitive property by different doping usually, the solution chemistry doping method is simple but qualitative control difficult.
Summary of the invention
The purpose of this invention is to provide a kind of polypyrrol gas sensitive sensor, to improve the serviceability of this sensor through ion doping.
Its polypyrrol gas sensitive film of polypyrrol gas sensitive sensor of the present invention adopts the chemical vapour deposition technique deposition, adopts other ion processing polypyrrole films of electrochemical doping then, obtains sensitiveer air-sensitive film.
1. chemical vapor deposition
(a) oxygenant coating: with (the NH of 1ul 0.1M
4)
2S
2O
8Drips of solution is on screen printing electrode, and coating evenly;
(b) prepare polypyrrole film in the pyrrole monomer vapor phase: will scribble (NH
4)
2S
2O
8Screen printing electrode be positioned in the vapor phase growing apparatus that contains pyrrole monomer, after placing 30 seconds～10 minutes under 4 ℃, polymerization forms film of poly pyrrole, behind the vapor deposition polymerization, be positioned in the baking oven 40 ℃ of dryings earlier 1 hour, and used a large amount of deionized water rinsing screen printing electrodes again, flush away residual oxidizer and unpolymerized pyrrole monomer, be positioned in the baking oven 40 ℃ of dryings then 24 hours, standby.
2. electrochemical doping
A kind of polypyrrol gas sensitive sensor, comprise the screen printing electrode that polypyrrole film is arranged with chemical vapor deposition, it is characterized in that: will the screen printing electrode of polypyrrole film be arranged with chemical vapor deposition is working electrode, mercurous chloride electrode is a reference electrode, platinum disk electrode is to electrode, put into the doped solution of using the nitrogen deoxygenation, contain 0.1M dopant ion ClO in this doped solution
4 -, perhaps the p-methyl benzenesulfonic acid ion carries out galvanochemistry and went to mix 100 seconds under setting current potential-0.5V, takes out and rinses well with deionized water; Carried out electrochemical doping 100 seconds under the 0.6V current potential then, the polypyrrol gas sensitive electrode that obtains mixing is put into baking oven with the good gas sensing electrode that mixes, and oven dry 24 hours is standby under 40 ℃ of situations.
With prior art relatively, advantage of the present invention is: this polypyrrol gas sensitive sensor can at room temperature be worked, and its serviceability is than much superior without the same type of sensor of going doping-doping.
Description of drawings
Fig. 1 is the response curve without the polypyrrol gas sensitive sensor that goes doping-doping.
Fig. 2 is the response curve through the polypyrrol gas sensitive sensor of past doping-doping.
Embodiment
To the screen printing electrode of polypyrrole film be arranged with chemical vapor deposition is working electrode, and mercurous chloride electrode is a reference electrode, and platinum disk electrode is to electrode, puts into the doped solution of using the nitrogen deoxygenation, contains 0.1M dopant ion ClO in this doped solution
4 -, perhaps the p-methyl benzenesulfonic acid ion carries out galvanochemistry and went to mix 100 seconds under setting current potential-0.5V, takes out and rinses well with deionized water; Carried out electrochemical doping 100 seconds under the 0.6V current potential then, the polypyrrol gas sensitive electrode that obtains mixing is put into baking oven with the good gas sensing electrode that mixes, and oven dry is 24 hours under 40 ℃ of situations, and is standby.
With CHI galvanochemistry instrument, apply earlier-voltage of 0.1V at the sensor two ends, put it into then and measure in the air chamber, sealing, stable up to resulting current value, then to the gas to be measured that wherein injects certain volume, make it reach normal concentration, observe current-responsive, represent the air-sensitive response of sensor with resistance change rate, after the end, with sensor taking-up carrying out desorption.During measurement, the voltage that is added in the electrode two ends can not be excessive, otherwise can cause the electrode heating, thereby cause the thermal drift of electrode.
Fig. 1 is polypyrrol gas sensitive sensor doped with Cl O
4 -Preceding is 100ppmNH to concentration
3Response curve.Fig. 2 is polypyrrol gas sensitive sensor doped with Cl O
4 -The back is 100ppmNH to concentration
3Response curve.As seen, it is much more superior than the serviceability before mixing to mix back polypyrrol gas sensitive sensor serviceability.
Claims (1)
1. polypyrrol gas sensitive sensor, comprise the screen printing electrode that polypyrrole film is arranged with chemical vapor deposition, it is characterized in that: will the screen printing electrode of polypyrrole film be arranged with chemical vapor deposition is working electrode, mercurous chloride electrode is a reference electrode, platinum disk electrode is to electrode, put into the doped solution of using the nitrogen deoxygenation, contain 0.1M dopant ion ClO in this doped solution
4 -, perhaps p-methyl benzenesulfonic acid ion carries out galvanochemistry under the situation of current potential for-0.5V and went to mix 100 seconds setting, and takes out and rinses well with deionized water; Carried out electrochemical doping 100 seconds under the 0.6V current potential then, the polypyrrol gas sensitive electrode that obtains mixing is put into baking oven with the good gas sensing electrode that mixes, and oven dry 24 hours is standby under 40 ℃ of situations.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100495185A CN100350239C (en) | 2005-03-31 | 2005-03-31 | Polypyrrol gas sensitive sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100495185A CN100350239C (en) | 2005-03-31 | 2005-03-31 | Polypyrrol gas sensitive sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1673730A CN1673730A (en) | 2005-09-28 |
| CN100350239C true CN100350239C (en) | 2007-11-21 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005100495185A Expired - Fee Related CN100350239C (en) | 2005-03-31 | 2005-03-31 | Polypyrrol gas sensitive sensor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100350239C (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101368925B (en) * | 2008-09-19 | 2011-10-26 | 浙江大学 | Poly-pyrrole and metal nanometer particle composite gas sensor and preparation thereof |
| CN106541711B (en) * | 2016-10-12 | 2018-02-23 | 华中科技大学 | A kind of parallel synthesizer and synthetic method of the air-sensitive film based on droplet premix transfer |
| CN107033349B (en) * | 2017-03-30 | 2019-08-30 | 青岛科技大学 | A kind of preparation method and applications of polypyrrole/nano platinum particle composite material |
| CN110632126A (en) * | 2019-09-04 | 2019-12-31 | 东华大学 | Organophosphorus compound sensor and preparation method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1063722A (en) * | 1988-02-13 | 1992-08-19 | 赫彻斯特股份公司 | The preparation method of electric conductive polymer |
| WO1993003355A1 (en) * | 1991-07-29 | 1993-02-18 | Neotronics Limited | Device for sensing volatile materials |
| US5252292A (en) * | 1989-05-18 | 1993-10-12 | Mitsutoshi Hirata | Ammonia sensor |
| JP2001281192A (en) * | 2000-03-31 | 2001-10-10 | Ngk Spark Plug Co Ltd | Gas sensor |
| JP2004269841A (en) * | 2003-01-17 | 2004-09-30 | National Institute Of Advanced Industrial & Technology | Conductive polypyrrole thin film and method for producing the same |
-
2005
- 2005-03-31 CN CNB2005100495185A patent/CN100350239C/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1063722A (en) * | 1988-02-13 | 1992-08-19 | 赫彻斯特股份公司 | The preparation method of electric conductive polymer |
| US5252292A (en) * | 1989-05-18 | 1993-10-12 | Mitsutoshi Hirata | Ammonia sensor |
| WO1993003355A1 (en) * | 1991-07-29 | 1993-02-18 | Neotronics Limited | Device for sensing volatile materials |
| JP2001281192A (en) * | 2000-03-31 | 2001-10-10 | Ngk Spark Plug Co Ltd | Gas sensor |
| JP2004269841A (en) * | 2003-01-17 | 2004-09-30 | National Institute Of Advanced Industrial & Technology | Conductive polypyrrole thin film and method for producing the same |
Non-Patent Citations (3)
| Title |
|---|
| 掺杂聚吡咯薄膜的金属电导 王萍等.物理学报，第33卷第12期 1984 * |
| 气相氧化聚合制备聚合物/聚吡咯表面复合导电材料 陈国华，颜文礼，徐金瑞.功能高分子学报，第11卷第2期 1998 * |
| 聚吡咯薄膜修饰电极的制备 宋九华等.乐山师范学院学报，第17卷第4期 2002 * |
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| Publication number | Publication date |
|---|---|
| CN1673730A (en) | 2005-09-28 |
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