CN100342558C - Ceramic package light-emitting diode an dits package method - Google Patents
Ceramic package light-emitting diode an dits package method Download PDFInfo
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- CN100342558C CN100342558C CNB2004100511338A CN200410051133A CN100342558C CN 100342558 C CN100342558 C CN 100342558C CN B2004100511338 A CNB2004100511338 A CN B2004100511338A CN 200410051133 A CN200410051133 A CN 200410051133A CN 100342558 C CN100342558 C CN 100342558C
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Abstract
The present invention discloses a ceramic package LED and a package method thereof. The LED comprises a baseplate, at least one LED chip and a package body packaged on the LED chip, wherein the baseplate is made of ceramic, and a concave package cavity is arranged at the upper part of the baseplate; an inner wall of the package cavity is an outwards inclined cambered surface to form a reflection ring; the LED chip is arranged in the package cavity. At least one first electrode and at least one second electrode are arranged in the package cavity of the baseplate, and the first electrode and the electrode respectively extend to the bottom of the ceramic baseplate. The present invention also provides a ceramic package method for packaging the LED. The LED provided by the present invention has the advantages of high brightness, good heat radiating performance and high soldering temperature resistance. The package method provided by the present invention has the advantages of simple manufacturing process, high production efficiency and high yield.
Description
Technical field
The present invention relates to a kind of method for packing of adopting surface mounted LED, refer to a kind of method for packing that adopts the adopting surface mounted LED of ceramic packaging especially.
Background technology
Light-emitting diode (light-emitting diode, LED) application more and more widely, at present, LED on the market mainly contains following classification: direct insertion LED (DIP LED), adopting surface mounted LED (SMD LED), encapsulating adopting surface mounted LED (TOP LED) and high-power formula LED (POWER LED).Wherein, direct insertion LED has brightness height, light decay is less, heat radiation is more satisfactory, anti-welding temperature is high advantage, and that its shortcoming is a volume is big, lighting angle is little, and it is not suitable for automated job, only is suitable for maximizing and uses; The advantage of adopting surface mounted LED is that volume is little, lighting angle is big, and shortcoming is that brightness is lower, weak heat-dissipating, big, the anti-welding temperature of optical attenuation are low, and it is suitable for the miniaturization small-power and uses and automated job; The advantage of encapsulating adopting surface mounted LED is that brightness is higher, lighting angle is big, and shortcoming is that heat radiation is relatively poor, and it is suitable for middle-size and small-sizeization use and automated job; The advantage of high-power formula LED is that brightness height, good heat dissipation, light decay are little, and shortcoming is that anti-welding temperature is lower, lighting angle is little, and it is not suitable for automated job, only is suitable for maximizing and uses.
As China national Department of Intellectual Property in January 21 in 2002 order the utility model patent that a kind of name is called " power-type patch light-emitting diode " is disclosed, the basic comprising of the power-type patch light-emitting diode of its announcement comprise coaxial in, shell body, two housings adopts alloy material, it is the cylindrical of groove shape that inner housing in the illustrated embodiment is an end face, the LED chip is fixed in the groove of this inner housing by elargol, shell body is the hollow cylindrical coaxial with inner housing, interior, the epoxy resin of embedding high light transmittance energy between the shell body, the LED chip is connected with shell body by a spun gold.
But, there is following shortcoming in the present invention: because its encapsulated epoxy resin between inside and outside housing, its heat dispersion is not good, the common operating current of this LED device can only be below 30mA, and high-power at present, high brightness LED chip has developed into the operating current maximum and can reach 500mA, so existing patch light-emitting diode has the problem of heat radiation, in the work temperature rise that temperature rise can allow above led chip, prescribe a time limit, this power-type paster LED will be operated in labile state, light efficiency sharply descends, and more can't show the advantageous characteristic of efficient LED chip.
And the other paster LED on market adopts the form of the good aluminium base encapsulation of heat conduction, and it has solved above-mentioned heat dissipation problem, and still the thermal coefficient of expansion of because aluminium is very big, so the reliability that its heatproof degree impacts is not good again.
For improving the luminosity of LED, abroad each major company, university and research institution drop into the encapsulation technology of huge fund developmental research high brightness LED chip and high brightness one after another; Released surface mount side light type White LED as a Japan day Asia, under 20 milliamperes in electric current, brightness can reach the high brightness product of 700～1000mcd.Its white light encapsulation technology of U.S. LumiLEDs illumination company can reach 20～30lm/w, can develop maximum luminous power and be 5 watts 120lm white light-emitting diodes.In order to realize high brightness, all run into the big difficult problem of light decay of present blue-light LED chip.To the discovering of light decay, light decay is except led chip itself according to us, and also having a most important factor is exactly Temperature Influence.
Summary of the invention
Existing paster LED heat dispersion is not good, brightness is not high or the not good deficiency of reliability of heatproof degree impact in order to overcome, and a kind of high packaging LED by ceramics of good, the anti-welding temperature of high brightness, heat dispersion of having gathered above-mentioned various LED advantages is provided.
The technical solution used in the present invention is: a kind of packaging LED by ceramics, described light-emitting diode comprises substrate, at least one led chip and the packaging body that is encapsulated on this led chip, described substrate is a ceramic substrate, be provided with the package cavity of a depression at an upper portion thereof, the inwall of this package cavity is outward-dipping cambered surface, form a reflection circle, led chip is installed in this package cavity, and in the package cavity of substrate, be provided with at least one first electrode and at least the second electrode, this first electrode and second electrode extend out to the bottom of ceramic substrate respectively, described packaging body is a silicon rubber, it is characterized in that: described method for packing comprises the steps:
(a) elargol on the led chip of the package cavity in ceramic substrate mounts and puts on the position;
(b) led chip is flattened on the elargol;
(c) by line weldering the overlying electrode of led chip is connected with second electrode on the ceramic substrate;
(d) silicon rubber is carried out heating in vacuum;
(e) again the silicon rubber of fluid is injected in this package cavity;
(f) silicon rubber of injection is solidified.
Described method for packing also comprised the step of cleaning described first electrode and second electrode with high frequency ion stream before (c) step.
Beneficial effect of the present invention is: it is simple that method for packing provided by the present invention has technology, production efficiency height, the advantage that rate of finished products is high, by this method encapsulated LED have the brightness height, advantage such as high-low temperature resistant degree impact property is strong, reliability is high and light decay is little.
Description of drawings
Fig. 1 is the schematic perspective view of the first embodiment of the present invention.
Fig. 2 is that Fig. 1 is the A-A profile.
Fig. 3 is the profile of another embodiment of the present invention.
Fig. 4 is the schematic perspective view of the third embodiment of the present invention.
Fig. 5 is the graph of relation of operating current of the present invention and maximum light intensity.
Fig. 6 is the flow chart of the method for packing of ceramic packaging LED of the present invention.
Embodiment
As shown in Figure 1, be schematic perspective view of the present invention.And in conjunction with shown in Figure 2.Adopting surface mounted LED of the present invention mainly comprises the packaging body 5 of ceramic substrate 1, led chip 2 and built-in this led chip.This ceramic substrate 1 is a square structure probably, and its top is provided with the package cavity 3 of a depression, and the inwall of this package cavity 3 is outward-dipping cambered surface, forms a reflection circle.Led chip is installed in this package cavity 3, is provided with two electrodes in the package cavity of substrate, i.e. first electrode 60, second electrode 61, and these two electrodes extend out to the bottom of ceramic substrate respectively.
Led chip 2 includes led chip main body 21, be arranged on the lower electrodes 22 below the led chip main body 21 and be arranged on overlying electrode 23 above the led chip main body 21.Lower electrodes 22 is formed by high conductive metal material (for example Au), covers the following whole zone of led chip main body 21.Overlying electrode 23 is formed by the metal material identical with lower electrodes 22, covers the top whole zone of led chip main body 21.
Led chip 2 places on first electrode 60, so that lower electrodes 22 is electrically connected with first electrode 60.The overlying electrode 23 of led chip 2 is connected with second electrode 61 through gold thread 4.First and second electrode 60,61 for example is a copper or made of iron.Wherein, be provided with one deck elargol 3 between led chip 2 and ceramic substrate 1, it can distribute very fast being transmitted on the substrate of heat that led chip produces.Packaging body 5 is formed by the silicon rubber of the optical transparency that led chip 2 is sent.
As shown in Figure 3, it is the generalized section of another embodiment of the present invention, wherein, silicon rubber forms the parabolic convex surface at ceramic substrate 1 end face, being packaging body 5 is made of packaging body main body and the convex lens portions that forms on the side of this packaging body main body, have the silicon rubber of good light permeability and the reflection circle in the package cavity 3 like this and form a good reflecting condensation chamber, thereby promote the luminous efficiency of this device.
As shown in Figure 4, be the schematic perspective view of the third embodiment of the present invention, in the present embodiment, three kinds of led chips (being generally RGB three-primary color LED chip) are installed simultaneously in the package cavity of ceramic substrate.These three kinds of led chips can and connect or are serially connected between the electrode of ceramic substrate.
As shown in Figure 5, it is the graph of relation of operating current of the present invention and maximum light intensity, there is shown three curves, acute pyogenic infection of finger tip adopts identical led chip respectively, the operating current of three kinds of different encapsulating products making with different packing forms and the graph of relation of maximum light intensity, wherein curve a has represented the curve of pcb board mold pressing encapsulated LED product; Curve b represents the curve of TOP surface perfusion type packaged LED product; Curve c has represented the curve of ceramic packaging LED product of the present invention.Therefrom as can be seen, under identical environment for use, the operating current maximum that ceramic packaging LED product of the present invention is born, the luminous intensity that is produced are also maximum.
As shown in Figure 6, the flow chart of the method for packing of ceramic packaging LED of the present invention.At first carry out the step of solid crystalline substance, utilize the solid automatically brilliant machine of ASM, elargol on the led chip of the package cavity in ceramic substrate 1 mounts and puts on the position is flattened on led chip on the elargol again; Carry out the step of bonding wire, mode by line weldering is connected the overlying electrode 23 of led chip 2 with second electrode 61 on the ceramic substrate, in this step, can increase high frequency ion stream cleaning, clean described electrode, can solve the not firm problem of bonding wire, strengthen sealing encapsulating adhesive strength simultaneously; Carry out the step of encapsulating, the silicon rubber that dissolves is injected in this package cavity 3, the silicon rubber of injection is solidified, because silica gel viscosity is bigger, so before this step, also need silicon rubber is carried out the step of heating in vacuum.Then this ceramic wafer is dashed the step of branch, every product is dashed separately; Then this product that dashes after dividing is carried out beam split and packing.
In the present invention, the substrate design has utilized the brilliant white of high density ceramic to add the reflection circle of interior circle, increases reflective surface area, improves the luminous intensity that goes out of LED greatly; High density ceramic has good temperature resistance energy and heat-conductive characteristic again simultaneously.In addition, because the thermal coefficient of expansion of the aluminum metal that the thermal coefficient of expansion of high density ceramic is better than heat conduction is much smaller, so adopt the high density ceramic encapsulated LED, the unfailing performance that its heatproof degree impacts is far superior to external high-power aluminium base encapsulated LED at present again.
LED chip bottom and the elargol that adopts high heat conduction connecting of substrate can be transmitted to the heat that led chip produced on the ceramic substrate soon and dissipate.
The design of fluid sealant because the thermal coefficient of expansion of ceramic substrate is little, can not use the bigger epoxy A/B glue of thermal coefficient of expansion to do encapsulant, and has adopted heatproof height, thermal coefficient of expansion is little, cementability is strong silicon rubber as fluid sealant.
Because advantages such as LED provided by the present invention has the brightness height, high-low temperature resistant degree impact property is strong, reliability is high and light decay is little, so it can be widely used in as special lightings such as material illumination, instrument and equipments, reach fields such as general decorative lighting, desk lamp, Lawn lamp, display screen, advertisement screen.It is simple that the method for packing that provides of the present invention has technology, production efficiency height, the advantage that rate of finished products is high.
Claims (2)
1. packaging LED by ceramics, described light-emitting diode comprises substrate, at least one led chip and the packaging body that is encapsulated on this led chip, described substrate is a ceramic substrate, be provided with the package cavity of a depression at an upper portion thereof, the inwall of this package cavity is outward-dipping cambered surface, form a reflection circle, led chip is installed in this package cavity, and in the package cavity of substrate, be provided with at least one first electrode and at least the second electrode, this first electrode and second electrode extend out to the bottom of ceramic substrate respectively, described packaging body is a silicon rubber, it is characterized in that: described method for packing comprises the steps:
(a) elargol on the led chip of the package cavity in ceramic substrate mounts and puts on the position;
(b) led chip is flattened on the elargol;
(c) by line weldering the overlying electrode of led chip is connected with second electrode on the ceramic substrate;
(d) silicon rubber is carried out heating in vacuum;
(e) silicon rubber of fluid is injected in this package cavity;
(f) silicon rubber of injection is solidified.
2. light emitter diode seal method as claimed in claim 1 is characterized in that, also comprises the step of cleaning described first electrode and second electrode with high frequency ion stream before in step (c).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100511338A CN100342558C (en) | 2004-08-11 | 2004-08-11 | Ceramic package light-emitting diode an dits package method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100511338A CN100342558C (en) | 2004-08-11 | 2004-08-11 | Ceramic package light-emitting diode an dits package method |
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| Publication Number | Publication Date |
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| CN1588652A CN1588652A (en) | 2005-03-02 |
| CN100342558C true CN100342558C (en) | 2007-10-10 |
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| CNB2004100511338A Expired - Fee Related CN100342558C (en) | 2004-08-11 | 2004-08-11 | Ceramic package light-emitting diode an dits package method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011060714A1 (en) * | 2009-11-18 | 2011-05-26 | 珠海晟源同泰电子有限公司 | Led light emitting module and manufacturing method thereof |
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| JP5029362B2 (en) * | 2005-08-10 | 2012-09-19 | 宇部興産株式会社 | Light emitting diode substrate and light emitting diode |
| CN101079460B (en) * | 2006-05-23 | 2010-05-12 | 台达电子工业股份有限公司 | Lighting device |
| JP4525804B2 (en) * | 2007-11-16 | 2010-08-18 | オムロン株式会社 | Optical semiconductor package and photoelectric sensor provided with the same |
| WO2009100588A1 (en) * | 2008-02-15 | 2009-08-20 | Helio Optoelectronics Corporation | A led base structure capable of improving the extraction efficiency |
| CN101515612B (en) * | 2008-02-18 | 2012-02-08 | 海立尔股份有限公司 | Holder structure of LED for improving lighting efficiency |
| WO2010006475A1 (en) * | 2008-07-15 | 2010-01-21 | 潮州三环（集团）股份有限公司 | A ceramic packaging substrate for the high power led |
| CN101465399B (en) * | 2008-12-30 | 2010-06-02 | 吉林大学 | LED chip base using diamond film as heat sink material and preparation method |
| TWI393275B (en) | 2009-02-04 | 2013-04-11 | Everlight Electronics Co Ltd | Light emitting diode package and fabrication method thereof |
| CN101800271B (en) * | 2009-02-10 | 2012-01-18 | 亿光电子工业股份有限公司 | Light emitting diode packaging body and manufacturing method thereof |
| CN101515621B (en) * | 2009-02-19 | 2011-03-30 | 旭丽电子(广州)有限公司 | LED chip, manufacturing method and encapsulating method |
| KR101154750B1 (en) | 2009-09-10 | 2012-06-08 | 엘지이노텍 주식회사 | Light emitting device and method for fabricating the same |
| KR101081166B1 (en) | 2009-09-23 | 2011-11-07 | 엘지이노텍 주식회사 | Light emitting device, method for fabricating the same and light emitting device package |
| KR101103892B1 (en) | 2009-12-08 | 2012-01-12 | 엘지이노텍 주식회사 | Light emitting device and light emitting device package |
| EP2333852B1 (en) | 2009-12-09 | 2019-03-27 | LG Innotek Co., Ltd. | Light emitting device and light emitting package |
| CN102332523B (en) * | 2010-07-13 | 2014-09-03 | 比亚迪股份有限公司 | Light-emitting diode (LED) support and production process thereof |
| CN103137831A (en) * | 2013-02-21 | 2013-06-05 | 深圳市瑞丰光电子股份有限公司 | Light-emitting diode (LED) lamp and encapsulation method thereof |
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| CN1304186A (en) * | 2000-01-10 | 2001-07-18 | 詹宗文 | Circular arc flat-bottom cupped light emitting diode manufacturing method |
| CN1396667A (en) * | 2001-07-16 | 2003-02-12 | 诠兴开发科技股份有限公司 | Package of LED |
| CN1463075A (en) * | 2002-05-27 | 2003-12-24 | 三星电机株式会社 | Ceramic packing with radiating cap |
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2004
- 2004-08-11 CN CNB2004100511338A patent/CN100342558C/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1304186A (en) * | 2000-01-10 | 2001-07-18 | 詹宗文 | Circular arc flat-bottom cupped light emitting diode manufacturing method |
| CN1396667A (en) * | 2001-07-16 | 2003-02-12 | 诠兴开发科技股份有限公司 | Package of LED |
| CN1463075A (en) * | 2002-05-27 | 2003-12-24 | 三星电机株式会社 | Ceramic packing with radiating cap |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2011060714A1 (en) * | 2009-11-18 | 2011-05-26 | 珠海晟源同泰电子有限公司 | Led light emitting module and manufacturing method thereof |
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| CN1588652A (en) | 2005-03-02 |
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Owner name: SHENZHEN REFOND OPTELECTRONICS CO., LTD. Free format text: FORMER NAME: SHENZHEN RUIFENG ELECTRONICS CO., LTD. |
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Address after: Shenzhen Nanshan District City, Guangdong province 518000 White Pine Road Baiwang letter Industrial Park two District Sixth. Patentee after: Shenzhen Refond Optoelectronics Co., Ltd. Address before: 1, building 518000, A1 building, Heping Science Park, Heping West Road, Longhua, Shenzhen, Guangdong Patentee before: Ruifeng Photoelectronic Co., Ltd., Shenzhen City |
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