CN100342498C - Method and equipment for manufacturing semiconductor device - Google Patents

Method and equipment for manufacturing semiconductor device Download PDF

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Publication number
CN100342498C
CN100342498C CNB038200406A CN03820040A CN100342498C CN 100342498 C CN100342498 C CN 100342498C CN B038200406 A CNB038200406 A CN B038200406A CN 03820040 A CN03820040 A CN 03820040A CN 100342498 C CN100342498 C CN 100342498C
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China
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mentioned
dielectric film
substrate
semiconductor device
film
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Expired - Fee Related
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CNB038200406A
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CN1679143A (en
Inventor
堀内博志
柄泽章孝
宫岛基守
山本保
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Fujitsu Semiconductor Ltd
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Fujitsu Ltd
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Publication of CN100342498C publication Critical patent/CN100342498C/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02074—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a planarization of conductive layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

In the present invention, organic cleaning liquid is used for cleaning the surface of a substrate with an exposed insulation region and an exposed metal region. The cleaned surface of the substrate is irradiated by ultraviolet rays. Thus, the situation of remaining residue on the surface of the substrate is avoided.

Description

The manufacture method of semiconductor device
Technical field
The present invention relates to a kind of manufacture method and manufacturing installation of semiconductor device, particularly a kind of by imbedding metal in the recess that on dielectric film, forms to form the manufacture method and the manufacturing installation thereof of the semiconductor device that connects up.
Background technology
In recent years, along with the high speed of semiconductor device (LSI), the delay of the signal of telecommunication that each electronic circuit wiring each other that connects in the chip is transmitted becomes the obstacle that makes the further high speed of LSI.In addition, it also is important problem that the reliability of wiring improves, the wiring material of existing as an alternative aluminium (Al), and copper (Cu) just receives publicity.Use under the situation of copper as wiring material,, adopt (damascene) method of inlaying based on being difficult to reason such as etching.
The existing method that forms the copper wiring by inlaying process of simple declaration.On the interlayer dielectric on the semiconductor substrate, form wiring groove.With the inner surface of barrier metal layer drape wire casing and the upper surface of interlayer dielectric.By kind (seed) layer of formation copper on the surface of barrier metal layer, and electro-coppering, thus with in the copper buried wiring groove.
Utilize residue copper film and barrier metal layer on chemico-mechanical polishing (CMP) the removal interlayer dielectric, the surface of exposing interlayer dielectric.Thus, remaining copper wiring in wiring groove.Behind the CMP, utilize alkaline soups such as ammoniacal liquor or organic base and organic acid to come the cleaning base plate surface, and carry out drying (for example, Japanese patent laid-open 11-330023 communique).
After dry substrate surface just, do not observe residue from the teeth outwards, showing has become clean state seemingly.But, in pure air, place about one day time after, when observing the surface, see residue.Can think, only by use alkaline soup and organic acid clean with and afterwards drying, be can cause remaining in from the teeth outwards organic compound that the suspension (slurry) that uses among the CMP contained or at organic compound that cleaning fluid contained.The oxidation on the surface that the copper that existence causes because of this residue connects up or rotten situation.
Summary of the invention
The objective of the invention is to, the manufacture method and the manufacturing installation thereof of the semiconductor device of residual residue on the substrate surface behind a kind of CMP of being suppressed at is provided.
According to the present invention, a kind of manufacture method of semiconductor device is provided, this method comprises: be formed with the operation that forms first dielectric film on the surface of semiconductor substrate of semiconductor element on the surface; In above-mentioned first dielectric film, form the operation of recess; To imbed the mode in the above-mentioned recess, the operation of deposit film on above-mentioned first dielectric film; Above-mentioned metal film is carried out chemico-mechanical polishing, operation until the surface of exposing above-mentioned first dielectric film; (a) clean the operation on the surface and the surface that above-mentioned first dielectric film exposes of above-mentioned metal film with cleaning fluid; (b) operation on the surface after the cleaning in the usefulness ultraviolet irradiation step (a); By being exposed in the reducing atmosphere, carry out the operation that reduction is handled with the surface of ultraviolet irradiation; Above-mentioned metal film go back on the original surface and above-mentioned first dielectric film on form the operation of second dielectric film.
By surface irradiation ultraviolet ray, can remove the residue that residues in the surface to the substrate after cleaning.
Description of drawings
Fig. 1～Fig. 3 is the cutaway view that is used to illustrate according to the substrate of the manufacture method of the semiconductor device of the embodiment of the invention.
Fig. 4 is the allocation plan of employed CMP device and cleaning device in the method according to embodiment.
Fig. 5 is the concise and to the point cutaway view of employed drying device in according to the method for embodiment.
Fig. 6 is a microphotograph of using the substrate surface of making according to the method for embodiment that exposes the copper wiring.
Fig. 7 is a microphotograph of using the substrate surface of making according to the method for reference example that exposes the copper wiring.
Embodiment
With reference to Fig. 1～Fig. 3, the manufacture method according to the semiconductor device of the embodiment of the invention is described.
As shown in Figure 1, divide active region by the element separating insulation film 2 that on the surface of the semiconductor substrate 1 that forms by silicon, forms.On the surface of this active region, be formed with MOS transistor 3 with source region 3S, drain region 3D and gate electrode 3G.
On semiconductor substrate 1, be formed with the interlayer dielectric 4 that forms by phosphosilicate glass (PSG) to cover MOS transistor 3.Interlayer dielectric 4 is after utilizing chemical vapor-phase growing (CVD) to pile up the psg film of thick about 1.5 μ m under 600 ℃, carries out the film of flattening surface by chemico-mechanical polishing (CMP).
On interlayer dielectric 4, be formed with the diaphragm 5 of the thick 50nm that forms by silicon nitride.Connect diaphragm 5 and interlayer dielectric 4, be formed with the through hole 6 that arrives 3D surface, drain region.The basal surface of through hole 6 and side surface are covered by barrier metal layers such as TiN 7, are filled with tungsten conductivity plug-in units 8 such as (W) in through hole 6.
On diaphragm 5,, form the dielectric film 10 of the thick 100～2000nm degree that forms by SiOC by using the CVD as unstrpped gas such as organosiloxane.In dielectric film 10, form the wiring groove 11 on the surface that arrives diaphragm 5.On the bottom surface of wiring groove 11, show the upper surface of conductivity plug-in unit 8.
On the upper surface of the inner surface of wiring groove 11 and dielectric film 10, form the barrier metal layer 14 of the thick 5～50nm that forms by TaN or Ta by sputter.On the surface of barrier metal layer 14, form the kind layer of copper by sputter, form metal film 15 by metallide copper or copper alloy.Inside with metal film 15 buried wiring grooves 11.
As shown in Figure 2, metal film shown in Fig. 1 15 and barrier metal layer 14 are carried out chemico-mechanical polishing, till exposing dielectric film 10.Residual barrier metal layer 14A on the inner surface of wiring groove 11, the residual copper wiring 15A that imbeds in wiring groove 11.
After the chemico-mechanical polishing, in pretreatment fluid, will expose 50 seconds of substrate immersion on the surface of dielectric film 10 and copper wiring 15A.The immersion of pretreatment fluid is called " preliminary treatment ".Pretreatment fluid is to contain for example aqueous solution of BTA (BTA) and Tetramethylammonium hydroxide (TMAH).The concentration of BTA is 0.05 volume %, and the concentration of TMAH is 0.2 volume %.BTA is the anticorrosive that is used to prevent the corrosion of copper.In addition, the TMAH concentration of pretreatment fluid also can be 0.01～1.2 volume %.In addition, BTA concentration also can be 0.001～1.0 volume %.In addition, also can carry out ultrasonic Treatment under with the state of substrate immersion in pretreatment fluid.
After the preliminary treatment, carry out scrubbing of substrate surface with cleaning fluid.Cleaning fluid is to contain the acid soup of organic acids such as oxalic acid, citric acid.After scrubbing, use the rotary cleaning device dry substrate.
To dried substrate surface irradiation ultraviolet radiation.In addition, also can be as present embodiment, irradiation ultraviolet radiation after using the rotary cleaning device dry substrate also can carry out dried and ultraviolet irradiation simultaneously and handle.
After the irradiation ultraviolet radiation, use ammonia plasma treatment or hydrogen plasma, the surface of copper wiring 15A is reduced.Be formed with from the teeth outwards under the situation of cupric oxide, utilize this plasma to handle, remove cupric oxide.
As shown in Figure 3, the interlayer dielectric 21 of thick 100～2000nm degree that on dielectric film, the etching that forms the thick 50nm that is formed by silicon nitride successively by CVD prevents film (nonproliferation film) 20, formed by SiOC.Utilize well-known dual damascene method, in the wiring groove midway 22 of the thickness direction that form to arrive interlayer dielectric 21, in the part of the basal surface of wiring groove 22, form the through hole 23 of the upper surface that arrives the copper wiring 15A of lower floor.
The barrier metal layer 24 that forms by TaN or Ta that formation covers the basal surface of the basal surface of through hole 23 and side surface and wiring groove 22 and side surface, and the copper wiring 25 imbedded in the inside of through hole 23 and wiring groove 22.With with the barrier metal layer 14A of the wiring layer of ground floor and the same method of formation method of copper wiring layer 15A, form barrier metal layer 24 and copper wiring 25.After forming copper wiring 25, identical with operation after the formation of ground floor copper wiring 15A, carry out cleaning, drying and the ultraviolet irradiation of substrate surface.
Use the same method, can form three-layer routing or the wiring more than the 3rd layer.
The allocation plan of employed in the above-described embodiments CMP, cleaning and drying device has been shown among Fig. 4.Below, further describe CMP, cleaning and drying device.In wafer case put area 50, be provided with a plurality of wafer case 60.In wafer case 60, maintain the wafer that is formed with metal film 15 shown in Figure 1.
Utilize Handling device, the carrying wafers that remains in the wafer case 60 is joined regional 53 to wafer.Wafer head picks up the wafer that is transported to wafer handing-over zone 53, and it is transported to the platen 51 that is used for polish copper.At this, carry out the polishing and the washing of copper film.Carrying wafers after wafer head will be washed is to the platen 52 that is used to polish barrier metal.At this, carry out the polishing and the washing of barrier metal layer.Wafer after the washing is turned back to wafer handing-over zone 53.
Handling device will turn back to the carrying wafers in wafer handing-over zone 53 to cleaning device 54.In cleaning device 54, dispose organic base cleaning device 55, organic acid cleaning device 56 and rotation clearing and drying device 57.Organic base cleaning device 55 comprises and is full of the treatment trough that the soup that for example contains BTA (BTA) and Tetramethylammonium hydroxide (TMAH) is arranged.The concentration of BTA is 0.05 volume %, and the concentration of TMAH is 0.2 volume %.Organic acid cleaning device 56 is to use organic acid brushing devices such as oxalic acid, citric acid.
The wafer that is transported to cleaning device 54 is immersed in the soup of organic base cleaning device 55.After this, in organic acid cleaning device 56, use organic acid to scrub.After scrubbing, substrate is arranged in the rotation clearing and drying device 57.
The concise and to the point cutaway view of rotation clearing and drying device 57 has been shown among Fig. 5.In container 70, dispose wafer keeping arm 71.Wafer keeping arm 71 rotatably keeps wafer 75.72 pairs at nozzle is sprayed the water that is used to wash by the surface of the wafer 75 that wafer keeping arm 71 is kept.With position by the surperficial subtend of the fixing wafer 75 that is kept with arm 71 of wafer, xenon lamp 73 is installed.Xenon lamp 73 emissions contain the ultraviolet ray of the light of wavelength 248nm.Be spaced apart about 10cm between wafer 75 and the xenon lamp 73.
When finishing to utilize organic acid to scrub, and when wafer 75 is arranged on rotation clearing and drying device 57,, wash Yi Bian rotate wafer 75 by spraying water from 72 pairs of wafers 75 of nozzle on one side.After this, stop to spray of water, Rotary drying wafer 75.After the drying, light ultra-violet lamp 73, to wafer 75 irradiation ultraviolet radiations.
Utilize Handling device, will turn back to through the wafer 75 of ultraviolet irradiation in the wafer case that in wafer case setting area 50, is provided with.
Illustrated among Fig. 6 and used the method according to the foregoing description to form the copper wiring, and clean, drying and ultraviolet irradiation, place scanning electron microscope (SEM) photo of the wafer surface after about a day.Ultraviolet irradiation time was made as 30 seconds.
Dense fine rule in the photo is an insulating regions, and light thick line is the copper wiring.Do not observe residue.
Fig. 7 represents not carry out the SEM photo that about one day wafer surface is afterwards placed in ultraviolet irradiation.Residual on wafer surface as can be known have a residue.Can think that this residue is the residue of organic compound contained in the cleaning fluid.
As according to shown in the method for embodiment, can think when irradiation ultraviolet radiation after drying, residue is decomposed, and make wafer surface cleaningization.
In the above-described embodiments, though use xenon lamp to come irradiation ultraviolet radiation, also can use emission can decompose ultraviolet other ultraviolet light source of the wave-length coverage of organic residue.For example, also can use mercury vapor lamp, KrF lamp, fluorescent lamp etc.When making ultraviolet wavelength too short, the semiconductor element that forms on wafer will sustain damage.For this reason, preferably, make the ultraviolet ray of irradiation not contain the composition that is shorter than wavelength 190nm.In addition, when wavelength is elongated,, therefore just must prolong irradiation time owing to be difficult to decompose organic residue.For this reason, preferably ultraviolet wavelength is 190～400nm.
The ultraviolet irradiation time is preferably more than 15 seconds or 15 seconds.In addition, even make irradiation time surpass 60 seconds,, do not find big difference for the removal effect of residue yet.
In addition, in the above-described embodiments, with the substrate of imbedding copper wiring in the interlayer dielectric that is formed by SiOC is example, understand cleaning, the drying means on surface, but the cleaning that illustrates in an embodiment, drying means also can be applicable to the cleaning of the substrate surface of imbedding copper removal metal line in addition on the interlayer dielectric that is formed by other insulating material.As the layer insulation membrane material, for example, can list SiLK (registered trade mark of ダ ウ ケ ミ カ Le (exabyte) company), SiO 2, mix the SiO of fluorine 2Deng.Can list with copper as wiring material is alloy of main component etc.
In addition, in the above-described embodiments,, under the situation of using other organic based cleaning liquid to clean, also can expect to remove the effect of residue by ultraviolet irradiation though be with the substrate surface behind TMAH and the organic acid cleaning CMP.
Though more than press embodiment and understand the present invention, the present invention is not limited thereto.For example, those skilled in the art understand naturally, can carry out various changes, improvement and combination etc. to the present invention.

Claims (4)

1. the manufacture method of a semiconductor device is characterized in that having:
Be formed with the operation that forms first dielectric film on the surface of semiconductor substrate of semiconductor element on the surface;
In above-mentioned first dielectric film, form the operation of recess;
To imbed the mode in the above-mentioned recess, the operation of deposit film on above-mentioned first dielectric film;
Above-mentioned metal film is carried out chemico-mechanical polishing, operation until the surface of exposing above-mentioned first dielectric film;
(a) clean the operation on the surface and the surface that above-mentioned first dielectric film exposes of above-mentioned metal film with cleaning fluid;
(b) operation on the surface after the cleaning in the usefulness ultraviolet irradiation step (a);
By being exposed in the reducing atmosphere, carry out the operation that reduction is handled with the surface of ultraviolet irradiation;
Above-mentioned metal film go back on the original surface and above-mentioned first dielectric film on form the operation of second dielectric film.
2. the manufacture method of semiconductor device according to claim 1 is characterized in that above-mentioned operation (b) comprises:
The operation on the surface of washing aforesaid substrate;
On one side to the surface irradiation ultraviolet ray of aforesaid substrate, on one side the operation of dry this substrate.
3. the manufacture method of semiconductor device according to claim 1 is characterized in that, the metallic region of exposing on the surface of aforesaid substrate is the wiring that is formed by copper or copper alloy.
4. the manufacture method of semiconductor device according to claim 1 is characterized in that, the ultraviolet wave-length coverage of irradiation is greater than 190nm in above-mentioned operation (b).
CNB038200406A 2003-01-06 2003-01-06 Method and equipment for manufacturing semiconductor device Expired - Fee Related CN100342498C (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2003/000023 WO2004061926A1 (en) 2003-01-06 2003-01-06 Method and equipment for manufacturing semiconductor device

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CN1679143A CN1679143A (en) 2005-10-05
CN100342498C true CN100342498C (en) 2007-10-10

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Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2006126536A1 (en) * 2005-05-25 2008-12-25 日本電気株式会社 Semiconductor device and manufacturing method thereof
WO2007055124A1 (en) * 2005-11-11 2007-05-18 Kyushu Institute Of Technology Method of polishing work and apparatus therefor
JP2007208142A (en) * 2006-02-03 2007-08-16 Sharp Corp Semiconductor device manufacturing method
JP5168966B2 (en) * 2007-03-20 2013-03-27 富士通セミコンダクター株式会社 Polishing method and polishing apparatus
JP5884582B2 (en) * 2012-03-19 2016-03-15 富士通株式会社 Semiconductor device manufacturing method and semiconductor device manufacturing apparatus
TWI770115B (en) 2017-02-06 2022-07-11 新加坡商平面半導體公司 Removal of process effluents
EP3577680A4 (en) 2017-02-06 2020-11-25 Planar Semiconductor, Inc. Sub-nanometer-level substrate cleaning mechanism
KR102226084B1 (en) * 2017-02-06 2021-03-09 플레이너 세미컨덕터, 인크. Sub-nanometer level light-based substrate cleaning mechanism

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000279899A (en) * 1999-03-29 2000-10-10 Shibaura Mechatronics Corp Method and apparatus for treating spin
JP2001293443A (en) * 2000-04-11 2001-10-23 Shimada Phys & Chem Ind Co Ltd Device and method for cleaning substrate
JP2002050685A (en) * 2000-07-31 2002-02-15 Fujitsu Ltd Semiconductor device and its manufacturing method

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000279899A (en) * 1999-03-29 2000-10-10 Shibaura Mechatronics Corp Method and apparatus for treating spin
JP2001293443A (en) * 2000-04-11 2001-10-23 Shimada Phys & Chem Ind Co Ltd Device and method for cleaning substrate
JP2002050685A (en) * 2000-07-31 2002-02-15 Fujitsu Ltd Semiconductor device and its manufacturing method

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JPWO2004061926A1 (en) 2006-05-18
WO2004061926A1 (en) 2004-07-22

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