CN100341667C - Grinding structural unit - Google Patents
Grinding structural unit Download PDFInfo
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- CN100341667C CN100341667C CNB2003101164265A CN200310116426A CN100341667C CN 100341667 C CN100341667 C CN 100341667C CN B2003101164265 A CNB2003101164265 A CN B2003101164265A CN 200310116426 A CN200310116426 A CN 200310116426A CN 100341667 C CN100341667 C CN 100341667C
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- grinding
- structural unit
- pad
- polishing pad
- abrasive disk
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- 238000000227 grinding Methods 0.000 title claims abstract description 268
- 238000005498 polishing Methods 0.000 claims description 76
- 229910001651 emery Inorganic materials 0.000 claims description 23
- 239000004744 fabric Substances 0.000 claims description 23
- 238000003701 mechanical milling Methods 0.000 claims description 15
- 239000000126 substance Substances 0.000 claims description 15
- 239000007788 liquid Substances 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 83
- 239000000377 silicon dioxide Substances 0.000 description 37
- 238000002955 isolation Methods 0.000 description 27
- 229910052581 Si3N4 Inorganic materials 0.000 description 19
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 19
- 230000000694 effects Effects 0.000 description 15
- 239000006061 abrasive grain Substances 0.000 description 13
- 229910052814 silicon oxide Inorganic materials 0.000 description 9
- 239000000853 adhesive Substances 0.000 description 8
- 230000001070 adhesive effect Effects 0.000 description 8
- 230000004888 barrier function Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 239000011230 binding agent Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005755 formation reaction Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 244000137852 Petrea volubilis Species 0.000 description 1
- 206010040007 Sense of oppression Diseases 0.000 description 1
- -1 acryl Chemical group 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical group [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001256 stainless steel alloy Inorganic materials 0.000 description 1
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Abstract
The present invention relates to a grinding structural unit which is composed of a grinding disk, a grinding gasket and a grinding pad, wherein the grinding gasket is arranged on the grinding disk; the grinding pad is arranged on the grinding gasket; the grinding gasket contacts the grinding pad by a first surface; the grinding gasket contacts the grinding disk by a second surface. The present invention is characterized in that the first surface or the second surface is a concave-convex surface.
Description
Technical field
The present invention relates to a kind of Grinding structural unit, particularly a kind of Grinding structural unit that can improve the grinding rate of emery cloth formula (fixed abrasive) chemical mechanical milling method.
Background technology
In semiconductor technology, along with size of components continues reduction, photolithographic exposure resolution ratio also increases relatively, and is accompanied by the reduction of the exposure depth of field, and is more strict for the requirement of wafer surface height fluctuating quantity.Therefore, the planarization (Planarization) of wafer at present all is to rely on chemical mechanical milling tech to finish, the worn character of the anisotropic of its uniqueness is except the planarization that is used for the wafer surface profile, also can be applicable to vertically to reach in the making, FEOL of the mosaic texture of horizontal metal interconnection mechanism (Interconnects) the assembly shallow trench isolation from (Shallow trench isolation STI) makes and making, MEMS planarization and the flat-panel screens making etc. of advanced assembly.
For the technology of fleet plough groove isolation structure, chemical mechanical milling tech is one of them important process step, traditionally, the chemical mechanical milling tech of fleet plough groove isolation structure generally all is to adopt the mode of lapping liquid (slurry) to remove silica on the active region silicon nitride.Yet, the cmp mode of use lapping liquid, the silica that but always can't effectively reduce in shallow trench produces the problem that dish falls into (dishing).Therefore, recently the normal mode that adopts is a kind of emery cloth formula chemical mechanical milling method that does not need lapping liquid, it is fixed in abrasive grains in the grinding pad, just make grinding pad as emery cloth (or sand paper), have abrasive grains and therefore have the function of grinding, the advantage of the method is to have the grinding selectivity ratio of silica to silicon nitride, and (planarization efficiency) is good for its planarization efficiency, and can effectively reduce the phenomenon that silica generation dish falls in the shallow trench.
What Fig. 1 was shown is the generalized section of a kind of emery cloth formula Grinding structural unit of prior art.Please refer to Fig. 1, the emery cloth formula Grinding structural unit 100 of prior art is by abrasive disk (platen) 130, polishing pad (subpad) 120 and grinding pad (polishing pad) 110 stack arrangement and constituting in regular turn, grinding pad 110 wherein is emery cloth formula grinding pad, and this grinding pad 110 is made of adhesive (binder) and the abrasive grains (abrasive) that is uniformly distributed in this adhesive.And, when using this Grinding structural unit 100 to carry out grinding technics, the grinding charge on the wafer (not shown in Fig. 1) is attached on the grinding pad 110, wafer and grinding pad 110 are produced relatively move to grind.
Yet above-mentioned emery cloth formula Grinding structural unit 100 has following problems on using:
When the surface of grinding charge is tending towards planarization, because grinding pad 110 also is smooth surface, grinding charge will be difficult to the adhesive in the grinding pad 110 is removed this moment, and make will be fast and significantly reduce to the grinding rate of grinding charge, thereby make grinding charge can't effectively be removed and cause the residual of grinding charge.
And, in the application of fleet plough groove isolation structure technology, after the wafer planarization, on wafer, still have too thick planarization silica (grinding charge) and cause aforementioned grinding rate to reduce and the residual problem of silica, therefore the silica height (overburden) on the active region silicon nitride must be controlled and make it less than a predetermined altitude, yet the technology width that this measure will make the silica ditch fill out (gap fill) technology is restricted.
Moreover, same in the application of fleet plough groove isolation structure technology, for 90nm and less than for the fleet plough groove isolation structure technology of 90nm, because the technology width that the silica ditch is filled out is more and more little, therefore the silica height on the aforementioned active region silicon nitride tends to surpass predetermined altitude, reduce and the residual problem of silica thereby may produce aforementioned grinding rate, make emery cloth formula chemical mechanical milling method be difficult to be applied to 90nm and reach shallow isolation structures technology less than 90nm.
Summary of the invention
Therefore, the purpose of this invention is to provide a kind of Grinding structural unit, make it possible to improve the grinding rate of emery cloth formula chemical mechanical milling method.
Another object of the present invention provides a kind of Grinding structural unit, in the grinding rate that can improve emery cloth formula chemical mechanical milling method, can also slow down the load effect when grinding.
Another purpose of the present invention provides a kind of Grinding structural unit, when emery cloth formula chemical mechanical milling method is applied to fleet plough groove isolation structure technology, can promote the technology width of fleet plough groove isolation structure technology, and emery cloth formula chemical mechanical milling method can be applied to the littler fleet plough groove isolation structure technology of size.
The invention provides a kind of Grinding structural unit, this Grinding structural unit is made up of an abrasive disk, a polishing pad and a grinding pad.Polishing pad is disposed on the abrasive disk, grinding pad is disposed on the polishing pad, wherein polishing pad contacts with grinding pad with a first surface, and polishing pad contacts with abrasive disk with a second surface, and at least first surface and second surface one of them be a convex-concave surface.
The present invention also provides another kind of Grinding structural unit, and this Grinding structural unit is made up of an abrasive disk, a polishing pad and a grinding pad.Polishing pad is disposed on the abrasive disk, grinding pad is disposed on the polishing pad, wherein polishing pad contacts with grinding pad with a first surface, polishing pad contacts with abrasive disk with a second surface, grinding pad contacts with polishing pad with one the 3rd surface, and abrasive disk contact with polishing pad with one the 4th surface, wherein first surface, second surface, the 3rd surperficial and the 4th surperficial one of them be a convex-concave surface.
And in above-mentioned Grinding structural unit, wherein the first surface of polishing pad and second surface are the convex-concave surface of tool difference of height simultaneously.
The invention provides a kind of abrasive disk, be applicable to a polishing pad and a grinding pad and form a Grinding structural unit, wherein abrasive disk has a main body, and this abrasive disk contacts with polishing pad with a surface, and this surface is a convex-concave surface.
The invention provides a kind of polishing pad, be applicable to an abrasive disk and a grinding pad and form a Grinding structural unit, wherein polishing pad has a main body, and this polishing pad contacts with grinding pad with a first surface, and contact with abrasive disk with a second surface, and, at least first surface and second surface one of them be a convex-concave surface.
The invention provides a kind of grinding pad, be applicable to an abrasive disk and a polishing pad and form a Grinding structural unit, wherein grinding pad has a main body, and this grinding pad with one the surface contact with polishing pad, it is characterized in that this surface is a convex-concave surface.
And, in above-mentioned grinding pad, polishing pad, abrasive disk and Grinding structural unit, wherein this convex-concave surface is made of many grooves and a plurality of convex structure, and the pattern of these a little grooves can comprise vertical bar shaped, cross, circular concentric, spirality and comprise one of vertical bar shaped, cross, circular concentric and spirality combining form.
Moreover in above-mentioned grinding pad, polishing pad, abrasive disk and Grinding structural unit, wherein this grinding pad comprises emery cloth formula grinding pad.
From the above, because grinding pad of the present invention, polishing pad or abrasive disk form the convex-concave surface with difference of height, when using the Grinding structural unit of forming by grinding pad, polishing pad and abrasive disk to grind, grinding pad will pressurized and is recessed towards the recess of convex-concave surface, thereby make grinding pad also produce concavo-convex fluctuating, therefore can improve the grinding rate of Grinding structural unit, even having an even surface of grinding charge, Grinding structural unit of the present invention still can provide quite good grinding rate.
And, because the concavo-convex fluctuating of the grinding pad of Grinding structural unit of the present invention is a kind of curyilinear smooth change, make shallow trench in the distribution of substrate, have the different pattern of density, thereby use Grinding structural unit of the present invention not only can reach the purpose that improves grinding rate, can also effectively reduce because the different load effect problem of grinding rate that the pattern density difference of grinding charge is caused by means of the level and smooth concavo-convex fluctuations of grinding pad.
In addition, because Grinding structural unit used in the present invention can improve grinding rate and be applicable to the grinding charge that has an even surface, thereby in the application of fleet plough groove isolation structure technology, the thickness of silica (grinding charge) will can not be restricted again, thereby can promote the technology width of fleet plough groove isolation structure technology.And, because the thickness of silica will can not be restricted again, that is be that silica can form enough thickness, fill out the technology width with the silica ditch that the fleet plough groove isolation structure technology that satisfies smaller szie is required, therefore, emery cloth formula Grinding structural unit of the present invention can be applied to the fleet plough groove isolation structure technology of smaller szie.
Moreover, when Grinding structural unit of the present invention is applied to grind the silica of fleet plough groove isolation structure technology, outside the grinding rate that can improve to silica, simultaneously can also be by means of the characteristics of emery cloth formula cmp, thus obtain planarization efficiency good, effectively reduce that silica generation dish falls into phenomenon in the shallow trench, grind and keep the effects such as high grinding selectivity ratio of silica silicon nitride.
For above and other objects of the present invention, feature and advantage can be become apparent, a preferred embodiment cited below particularly, and cooperate appended accompanying drawing, be described in detail below:
Description of drawings
What Fig. 1 was shown is the generalized section of a kind of Grinding structural unit of prior art.
Fig. 2 is shown is generalized section according to a kind of Grinding structural unit of one embodiment of the present invention.
What Fig. 3 A to Fig. 3 D was shown is the schematic diagram of the groove shape among Fig. 2.
Fig. 4 is shown is the generalized section of the grinding technics of the Grinding structural unit of Fig. 2 silica that is applied to fleet plough groove isolation structure.
Fig. 5 is shown is to have under the situation of Grinding structural unit of different roughness polishing pad in use, for the schematic diagram of the influence of silica/silicon nitride grinding rate.
Fig. 6 is shown is generalized section according to a kind of Grinding structural unit of another preferred embodiment of the present invention.
Fig. 7 is shown is generalized section according to a kind of Grinding structural unit of another preferred embodiment of the present invention.
Fig. 8 is shown is generalized section according to a kind of Grinding structural unit of another preferred embodiment of the present invention.
Fig. 9 is shown is generalized section according to a kind of Grinding structural unit of another preferred embodiment of the present invention.
Under the situation of Figure 10 illustrate for the Grinding structural unit that has the different roughness abrasive disk in use, for the schematic diagram of the influence of silica/silicon nitride grinding rate.
Description of reference numerals:
100,200: Grinding structural unit
110,210: grinding pad
120,220: polishing pad
130,230: abrasive disk
300: wafer
310: insulating barrier
212,222,226,232: the surface
214,224,228,234: the convex structure
215,225,229,235: groove.
The specific embodiment
First embodiment
Fig. 2 is shown is generalized section according to a kind of Grinding structural unit of one embodiment of the present invention.Please refer to Fig. 2, Grinding structural unit 200 of the present invention is by grinding pad (polishing pad) 210, polishing pad (sub pad) 220 and 230 formations of abrasive disk (platen).
Please continue with reference to Fig. 2, grinding pad 210 is disposed on the polishing pad 220, in the present embodiment, the main body of grinding pad 210 for example is emery cloth formula (fixed abrasive) grinding pad, grinding pad 210 comprises that (this is among Fig. 2 for simplicity a plurality of abrasive grains, drawn be the grinding pad 210 of whole layer and do not draw indivedual abrasive grains), wherein these abrasive grains are pyrometric cone, hexagonal awl or cylindric and matrix form arrangement, and each abrasive grains is made of adhesive (binder) and the abrasive grains (abrasive) that is uniformly distributed in this adhesive, and adhesive for example is to cohere resin (resin).What deserves to be mentioned is that if grinding pad is applied to the grinding technics of the silica of fleet plough groove isolation structure, then employed abrasive grains preferably is cerium oxide (CeO
2), it has for silica and silicon nitride higher grinding selectivity ratio is arranged.
Please continue with reference to Fig. 2, polishing pad 220 is disposed on the abrasive disk 230, and wherein the main body of this polishing pad 220 is made of materials such as plastics, rubber or acryl.It should be noted that herein that in the polishing pad 220 of present embodiment wherein the surface 222 that contacts with grinding pad 210 is formed the surface with concavo-convex (difference of height) by a plurality of convex structures 224 with groove 225.Wherein make surface 222 formation of polishing pad 220 have the method on the surface of concavo-convex (difference of height), for example be to remove the polishing pad 220 of part to form groove 225 and convex structure 224, and the pattern of formed groove 225 for example is vertical bar shaped (as shown in Figure 3A), cross (shown in Fig. 3 B), circular concentric (shown in Fig. 3 C), spirality (shown in Fig. 3 D) or comprise one of vertical bar shaped, cross, circular concentric and spiral combining form.
Then, please continue with reference to Fig. 2, abrasive disk 230 is disposed in the grinder station (not shown), and wherein the main body of this abrasive disk 230 is made of materials such as stainless steel or aluminium alloys.
Then, the generalized section that please refer to Fig. 4 is applied to grind the silica of fleet plough groove isolation structure with the Grinding structural unit 200 of explanation present embodiment.In Fig. 4, wafer 300 has a plurality of shallow trench, and on wafer 300, be formed with in order to fill these a little shallow trench and to have the insulating layer of silicon oxide (that is referring to grinding charge) 310 of difference of height, when the Grinding structural unit 200 that uses present embodiment grinds insulating barriers 310, the surface pressure that is formed with insulating barrier 310 of wafer 300 is invested on the grinding pad 210 to grind.
It should be noted that herein, because the surface with concavo-convex (difference of height) is formed by convex structure 224 and groove 225 in the surface 222 of polishing pad 220, when grinding, grinding pad 210 will suffer oppression and produce recessed towards groove 225, thereby make grinding pad 210 also can produce concavo-convex fluctuating (difference of height) thereupon, and, because grinding pad 210 produces the event of concavo-convex fluctuating, make the adhesive at grinding pad 210 protrusions positions be removed easily and expose abrasive grains, therefore abrasive grains wherein will be easier to contact with insulating barrier 310, thereby can improve the grinding rate of Grinding structural unit 200.
And, in above-mentioned grinding technics, even the surface of insulating barrier 310 is gradually in smooth, because grinding pad 210 has the event of concavo-convex fluctuating, based on above-mentioned grinding mechanism, with the grinding pad that has an even surface of prior art in comparison, the Grinding structural unit 200 of present embodiment still can have quite good grinding rate.
In addition, as shown in Figure 3, the concavo-convex fluctuating (difference of height) of the grinding pad 210 of present embodiment is that a kind of curyilinear level and smooth (smooth) changes, but not as the sharp keen variation of right-angle type on the surface 222 of polishing pad 220, therefore, even shallow trench has the different pattern of density (not drawing the different pattern of density of shallow trench in Fig. 3) in the distribution of substrate, as the grinding pad 210 that the uses present embodiment words of grinding, not only can reach the purpose that improves grinding rate, more can effectively reduce because different load effect (loading effect) problem of grinding rate that the pattern density difference of grinding charge is caused by means of the level and smooth concavo-convex fluctuations of grinding pad 210.
Then, please refer to Fig. 5, what Fig. 5 was shown is under the situation of using different polishing pads, for the influence of silica/silicon nitride grinding rate.Wherein ■ represents to use the Grinding structural unit of common grinding liner to grind silicon oxide layer.represents to make the Grinding structural unit of apparatus groove polishing pad to grind silicon oxide layer.● expression uses the Grinding structural unit of common grinding liner to grind silicon nitride layer.Zero expression makes the Grinding structural unit of apparatus groove polishing pad to grind silicon nitride layer.By shown in the figure as can be known, no matter be to use the Grinding structural unit of common grinding liner or tool groove polishing pad to grind silicon nitride layer, it removes all very low of speed to silicon nitride layer, therefore quite be applicable to the chemical mechanical milling tech of the worn silicon oxide layer of fleet plough groove isolation structure, moreover, with Grinding structural unit that uses the common grinding liner and the Grinding structural unit that makes apparatus groove polishing pad in comparison, make apparatus groove polishing pad person significantly exceed and use common grinding liner person a lot of to the speed that removes of silicon oxide layer, therefore, make the Grinding structural unit of apparatus groove polishing pad, just use the grinding pad surface to have ups and downs Grinding structural unit, can effectively improve grinding rate for silica (grinding charge).
Second embodiment
Fig. 6 is shown is generalized section according to a kind of Grinding structural unit of another preferred embodiment of the present invention.And in Fig. 6, the identical person with Fig. 2 of member uses identical Reference numeral and omits its explanation.Please refer to Fig. 6, Grinding structural unit 200 of the present invention is made of grinding pad 210, polishing pad 220 and abrasive disk 230.The present embodiment and the first embodiment difference, be that groove 229 and convex structure 228 are arranged on polishing pad 220 and the surface 226 that abrasive disk 230 contacts, this moment, but polishing pad 220 was preferably the material of employing deformation, for example be rubber, and, the pattern of formed groove 229 for example is one of the pattern shown in Fig. 3 A to Fig. 3 D or combining form of these patterns.
When the Grinding structural unit 200 that uses present embodiment grinds, grinding pad 210 can be recessed to groove 229 with polishing pad 220, make grinding pad 210 produce level and smooth concavo-convex fluctuating as first embodiment, thereby can reach raising grinding rate equally, and slow down the effect of grinding load effect as first embodiment.
The 3rd embodiment
Fig. 7 is shown is generalized section according to a kind of Grinding structural unit of another preferred embodiment of the present invention.And in Fig. 7, the identical person with Fig. 2 of member uses identical Reference numeral and omits its explanation.Please refer to Fig. 7, Grinding structural unit 200 of the present invention is made of grinding pad 210, polishing pad 220 and abrasive disk 230.The present embodiment and the first embodiment difference, be that the surface 222 that polishing pad 220 contacts with grinding pad 210 is provided with outside groove 225 and the convex structure 224, its with surface 226 that abrasive disk 230 contacts on also be provided with groove 229 and convex structure 228, and, the pattern of formed groove 229 for example is one of the pattern shown in Fig. 3 A to Fig. 3 D or combining form of these patterns.
When the Grinding structural unit 200 that uses present embodiment grinds, grinding pad 210 can be recessed to groove 225, and polishing pad 220 itself also may be recessed to groove 229, make grinding pad 210 can produce level and smooth concavo-convex fluctuating as first embodiment, thereby can reach raising grinding rate equally, and slow down the effect of grinding load effect as first embodiment.
The 4th embodiment
Fig. 8 is shown is generalized section according to a kind of Grinding structural unit of another preferred embodiment of the present invention.And in Fig. 8, the identical person with Fig. 2 of member uses identical Reference numeral and omits its explanation.Please refer to Fig. 8, Grinding structural unit 200 of the present invention is made of grinding pad 210, polishing pad 220 and abrasive disk 230.The present embodiment and the first embodiment difference, be that groove 215 and convex structure 214 are arranged on grinding pad 210 and the surface 212 that abrasive disk 230 contacts, and the pattern of formed groove 229 for example is one of the pattern shown in Fig. 3 A to Fig. 3 D or combining form of these patterns.
Same, when the Grinding structural unit 200 that uses present embodiment grinds, grinding pad 210 can be recessed to groove 215, make grinding pad 210 produce level and smooth concavo-convex fluctuating as first embodiment, thereby can reach raising grinding rate equally, and slow down the effect of grinding load effect as first embodiment.
The 5th embodiment
Fig. 9 is shown is generalized section according to a kind of Grinding structural unit of another preferred embodiment of the present invention.And in Fig. 9, the identical person with Fig. 2 of member uses identical Reference numeral and omits its explanation.Please refer to Fig. 9, Grinding structural unit 200 of the present invention is made of grinding pad 210, polishing pad 220 and abrasive disk 230.The present embodiment and the first embodiment difference, be that groove 235 and convex structure 234 are arranged on abrasive disk 230 and the surface 232 that polishing pad 220 contacts, this moment, but polishing pad 220 was preferably the material of employing deformation, for example be rubber, and, the pattern of formed groove 229 for example is one of the pattern shown in Fig. 3 A to Fig. 3 D or combining form of these patterns.
Same, when the Grinding structural unit 200 that uses present embodiment grinds, grinding pad 210 can be recessed to groove 235 with polishing pad 220, make grinding pad 210 produce level and smooth concavo-convex fluctuating as first embodiment, thereby can reach raising grinding rate equally, and slow down the effect of grinding load effect as first embodiment.
Then, please refer to Figure 10, what Figure 10 was shown is under the situation of the abrasive disk that uses different rough surfaces, for the influence of silica/silicon nitride grinding rate.Wherein ■ represents to use the Grinding structural unit of low rough surface abrasive disk (that is grinding pad not the concavo-convex fluctuating person of tool) to grind silicon oxide layer.represents to use the Grinding structural unit of high rough surface abrasive disk (that is grinding the concavo-convex fluctuating person of spacer) to grind silicon oxide layer.● expression uses the Grinding structural unit of low rough surface abrasive disk to grind silicon nitride layer.Zero expression uses the Grinding structural unit of high rough surface abrasive disk to grind silicon nitride layer.By shown in the figure as can be known, no matter be to use the Grinding structural unit of low rough surface abrasive disk or high rough surface abrasive disk to grind silicon nitride layer, it removes all very low of speed to silicon nitride layer, therefore quite be applicable to the chemical mechanical milling tech of the worn silicon oxide layer of fleet plough groove isolation structure, moreover, compare with the Grinding structural unit that uses high rough surface abrasive disk using the Grinding structural unit of low rough surface abrasive disk, use high rough surface abrasive disk person that the speed that removes of silicon oxide layer is significantly exceeded and uses low rough surface abrasive disk person a lot of, therefore, use the Grinding structural unit of high rough surface abrasive disk, just use the grinding pad surface to have ups and downs Grinding structural unit, can effectively improve grinding rate for silica (grinding charge).
In the various embodiments described above, in grinding pad, form the method on the ups and downs surface of tool on polishing pad or the abrasive disk, by removing the grinding pad of part, the mode that polishing pad or abrasive disk surface form groove realizes, yet the present invention is not limited thereto, the present invention can also be by means of at grinding pad, form the mode of convex structure on polishing pad or the abrasive disk surface, for example be can be by means of at grinding pad, polishing pad or abrasive disk surface adhesive tape of paste, or at aforementioned grinding pad, polishing pad or abrasive disk surface form the convex structure of patterning in the mode of screen painting, so that at grinding pad, form the ups and downs surface of tool on polishing pad or the abrasive disk.Further, no matter be to adopt which kind of method, so long as on grinding pad, polishing pad or abrasive disk, be formed with the ups and downs surface of tool, just be included in the technical characterictic of the present invention.
In addition, in above preferred embodiment, be to enumerate that to be applied to fleet plough groove isolation structure technology be that example is done explanation, yet those skilled in the art should understand, so long as the application of chemical mechanical milling tech, for example be the planarization of wafer surface profile, vertically reach making, MEMS planarization and the flat-panel screens making etc. of the making of the mosaic texture of horizontal metal interconnection mechanism, advanced assembly, can both use Grinding structural unit of the present invention.
In sum, the present invention has following advantage at least:
1. because grinding pad of the present invention, polishing pad also or abrasive disk forms the convex-concave surface with difference of height, using by grinding pad, when the Grinding structural unit that polishing pad and abrasive disk are formed grinds, grinding pad will pressurized and is recessed towards the recess of convex-concave surface, thereby make grinding pad also produce concavo-convex fluctuating, expose abrasive grains owing to the adhesive at grinding pad protrusions position is removed easily this moment, therefore abrasive grains wherein will be easier to contact with grinding charge, thereby can improve the grinding rate of Grinding structural unit, even having an even surface of grinding charge, Grinding structural unit of the present invention still can provide quite good grinding rate.
2. the grinding pad of Grinding structural unit of the present invention, its concavo-convex fluctuating is a kind of curyilinear smooth change, even shallow trench has the different pattern of density in the distribution of substrate, use Grinding structural unit of the present invention not only can reach the purpose that improves grinding rate, more can effectively reduce because the different load effect problem of grinding rate that the pattern density difference of grinding charge is caused by means of the level and smooth concavo-convex fluctuations of grinding pad.
3. can improve grinding rate and be applicable to the grinding charge that has an even surface owing to Grinding structural unit used in the present invention, thereby in the application of fleet plough groove isolation structure technology, the thickness of silica will can not be restricted again, thereby can promote the technology width of fleet plough groove isolation structure technology.And, because the thickness of silica will can not be restricted again, that is be the enough thickness that silica can form, fill out the technology width with the required silica ditch of fleet plough groove isolation structure technology that satisfies smaller szie (90nm and following), therefore, emery cloth formula Grinding structural unit of the present invention can be applied to the fleet plough groove isolation structure technology of smaller szie.
4. Grinding structural unit of the present invention, when being applied to grind the silica of fleet plough groove isolation structure technology, outside the grinding rate that can improve to silica, simultaneously can also be by means of the characteristics of emery cloth formula cmp, thus obtain planarization efficiency good, effectively reduce that silica generation dish falls into phenomenon in the shallow trench, grind and keep the effects such as high grinding selectivity ratio of silica silicon nitride.
Though the present invention with a preferred embodiment openly as above; right its is not in order to limit the present invention; those skilled in the art change and retouching when doing some without departing from the spirit and scope of the present invention, so the scope that protection scope of the present invention should attached claims define later on is as the criterion.
Claims (8)
1. Grinding structural unit not needing to be used for the chemical mechanical milling method of lapping liquid, and this Grinding structural unit comprises:
One abrasive disk;
One polishing pad is disposed on this abrasive disk; And
One emery cloth formula grinding pad is disposed on this polishing pad,
Wherein this polishing pad contacts with this emery cloth formula grinding pad with a first surface, and this polishing pad contacts with this abrasive disk with a second surface, and at least this first surface and this second surface one of them be a convex-concave surface.
2. Grinding structural unit as claimed in claim 1, wherein this convex-concave surface comprises many grooves and a plurality of convex structure.
3. Grinding structural unit as claimed in claim 2, wherein the pattern of these grooves comprises vertical bar shaped, cross, circular concentric, spirality and comprises one of vertical bar shaped, cross, circular concentric and spiral combining form.
4. Grinding structural unit as claimed in claim 1, wherein this first surface and this second surface are convex-concave surface simultaneously.
5. Grinding structural unit not needing to be used for the chemical mechanical milling method of lapping liquid, and this Grinding structural unit comprises:
One abrasive disk;
One polishing pad is disposed on this abrasive disk; And
One emery cloth formula grinding pad is disposed on this polishing pad,
Wherein this polishing pad contacts with this emery cloth formula grinding pad with a first surface, this polishing pad contacts with this abrasive disk with a second surface, this emery cloth formula grinding pad contacts with this polishing pad with one the 3rd surface, and this abrasive disk contact with this polishing pad with one the 4th surface, and this first surface, this second surface, the 3rd surperficial and the 4th surperficial one of them be convex-concave surface.
6. Grinding structural unit as claimed in claim 5, wherein this first surface and this second surface are convex-concave surface simultaneously.
7. Grinding structural unit as claimed in claim 5, wherein this convex-concave surface comprises many grooves and a plurality of convex structure.
8. Grinding structural unit as claimed in claim 7, wherein the pattern of these grooves comprises vertical bar shaped, cross, circular concentric, spirality and comprises one of vertical bar shaped, cross, circular concentric and spiral combining form.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2003101164265A CN100341667C (en) | 2003-11-21 | 2003-11-21 | Grinding structural unit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2003101164265A CN100341667C (en) | 2003-11-21 | 2003-11-21 | Grinding structural unit |
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| Publication Number | Publication Date |
|---|---|
| CN1618572A CN1618572A (en) | 2005-05-25 |
| CN100341667C true CN100341667C (en) | 2007-10-10 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNB2003101164265A Expired - Lifetime CN100341667C (en) | 2003-11-21 | 2003-11-21 | Grinding structural unit |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104647192B (en) * | 2015-01-22 | 2017-04-05 | 浙江工业大学 | A kind of orderly set Ginding process of bipolar plate surfaces fluid channel |
| CN110062681A (en) * | 2016-12-07 | 2019-07-26 | 3M创新有限公司 | Flexible abrasive article |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5607345A (en) * | 1994-01-13 | 1997-03-04 | Minnesota Mining And Manufacturing Company | Abrading apparatus |
| US5692949A (en) * | 1995-11-17 | 1997-12-02 | Minnesota Mining And Manufacturing Company | Back-up pad for use with abrasive articles |
| US6135856A (en) * | 1996-01-19 | 2000-10-24 | Micron Technology, Inc. | Apparatus and method for semiconductor planarization |
| US20010031612A1 (en) * | 2000-01-06 | 2001-10-18 | Scott Diane B. | Retention of a polishing pad on a platen |
| US20020068516A1 (en) * | 1999-12-13 | 2002-06-06 | Applied Materials, Inc | Apparatus and method for controlled delivery of slurry to a region of a polishing device |
| US20020106980A1 (en) * | 2001-02-07 | 2002-08-08 | 3M Innovative Properties Company | Abrasive article suitable for modifying a semiconductor wafer |
-
2003
- 2003-11-21 CN CNB2003101164265A patent/CN100341667C/en not_active Expired - Lifetime
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5607345A (en) * | 1994-01-13 | 1997-03-04 | Minnesota Mining And Manufacturing Company | Abrading apparatus |
| US5692949A (en) * | 1995-11-17 | 1997-12-02 | Minnesota Mining And Manufacturing Company | Back-up pad for use with abrasive articles |
| US6135856A (en) * | 1996-01-19 | 2000-10-24 | Micron Technology, Inc. | Apparatus and method for semiconductor planarization |
| US20020068516A1 (en) * | 1999-12-13 | 2002-06-06 | Applied Materials, Inc | Apparatus and method for controlled delivery of slurry to a region of a polishing device |
| US20010031612A1 (en) * | 2000-01-06 | 2001-10-18 | Scott Diane B. | Retention of a polishing pad on a platen |
| US20020106980A1 (en) * | 2001-02-07 | 2002-08-08 | 3M Innovative Properties Company | Abrasive article suitable for modifying a semiconductor wafer |
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| Publication number | Publication date |
|---|---|
| CN1618572A (en) | 2005-05-25 |
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Effective date of registration: 20180102 Address after: No. 88 Lianhua Avenue, Jinjiang City, Quanzhou, Fujian Patentee after: FUJIAN JINHUA INTEGRATED CIRCUIT Co.,Ltd. Address before: Hsinchu Science Park, Taiwan, China Patentee before: UNITED MICROELECTRONICS Corp. |
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