CH663549A5 - Eliminating toxic gases from semiconductor mfr. - by thermally decomposing them at low pressure and recovering non-gaseous residues - Google Patents

Eliminating toxic gases from semiconductor mfr. - by thermally decomposing them at low pressure and recovering non-gaseous residues Download PDF

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Publication number
CH663549A5
CH663549A5 CH304985A CH304985A CH663549A5 CH 663549 A5 CH663549 A5 CH 663549A5 CH 304985 A CH304985 A CH 304985A CH 304985 A CH304985 A CH 304985A CH 663549 A5 CH663549 A5 CH 663549A5
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CH
Switzerland
Prior art keywords
gases
residues
installation
oven
low pressure
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Application number
CH304985A
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French (fr)
Inventor
Antoine Dubas
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Antoine Dubas
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Priority to CH304985A priority Critical patent/CH663549A5/en
Publication of CH663549A5 publication Critical patent/CH663549A5/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/029—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of monosilane
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

Toxic gases from the semiconductor industry are eliminated by thermally decomposing tham at low pressure and recovering the non-gaseuos residues. USE/ADVANTAGE - For silane from plasma etching or plasma deposition. Gases can be continuously and easily converted to easily handable residues, in situ, without shortening the life of an installation. Gas from a semiconductor installation (i) is fed by a sec. pump (6) to a high temp. furnace (2) of stainless steel or quartz. The furnace is pref. tubular and has a gas outlet leading to a gravity tap for solid decompsn. prods. A pump (5) draws gas from the trap through filter (4) and discharges it to the atmos. The trap is fitted with purge valves. (Previously notified in week 8803)

Description

**ATTENTION** debut du champ DESC peut contenir fin de CLMS **. ** ATTENTION ** start of the DESC field may contain end of CLMS **.

REVENDICATION Procédé d'élimination des gaz toxiques de l'industrie des semiconducteurs, caractérisé par le fait que les gaz sont décomposés par traitement thermique à basse pression et que les résidus non gazeux sont récupérés au sein de l'installation. CLAIM Process for removing toxic gases from the semiconductor industry, characterized in that the gases are broken down by heat treatment at low pressure and that the non-gaseous residues are recovered within the installation.

La fabrication des semi-conducteurs nécessite un certain nombre de réactions (plasma etching, plasma déposition...) qui mettent en cause des gaz souvent très agressifs. The manufacture of semiconductors requires a certain number of reactions (plasma etching, plasma deposition, etc.) which often involve very aggressive gases.

L'utilisation de ces gaz crée un certain nombre de problémes techniques: après usage, ces gaz doivent être décomposés et remis à l'at mosphère; - leur décomposition partielle pendant les processus de fabrica tion génère des sous-produits abrasifs ou chimiquement actifs, ce qui augmente les risques et diminue la durée de vie des installations; - la mise en oeuvre des bouteilles les contenant ou leur rempla cement nécessite des opérations de purge délicates qui libè rent d'assez grandes quantités de gaz contaminés. The use of these gases creates a certain number of technical problems: after use, these gases must be broken down and returned to the att mosphere; - their partial decomposition during the manufacturing processes tion generates abrasive or chemically by-products assets, which increases risks and shortens lifespan installations; - the use of bottles containing them or replacing them cement requires delicate purging operations which frees bring in fairly large amounts of contaminated gas.

Il existe à l'heure actuelle un certain nombre de dispositifs permettant de résoudre en partie ces problèmes, par exemple des installations permettant de filtrer en continu les huiles des pompes par où transitent ces gaz. At the present time there are a number of devices which make it possible to partially solve these problems, for example installations making it possible to continuously filter the oils from the pumps through which these gases pass.

L'invention consiste à décomposer ces gaz avant leur rejet à l'atmosphère, par traitement thermique à basse pression. Les résidus solides sont récupérés au sein de l'installation, de manière à ne rejeter à l'air libre que des produits non toxiques ou plus faciles à traiter. Ce procédé est applicable à de nombreux gaz. The invention consists in decomposing these gases before their rejection to the atmosphere, by heat treatment at low pressure. Solid residues are collected within the installation, so that only non-toxic or easier-to-treat products are released into the air. This process is applicable to many gases.

Le silane (SiH4) par exemple se dissocie totalement aux environs de 700 degrés Celsius. Le silicium qui en résulte peut être évacué sous forme solide, et l'hydrogène libéré est beaucoup moins dangereux que le silane, qui est pyrophorique. Silane (SiH4) for example dissociates completely around 700 degrees Celsius. The resulting silicon can be released in solid form, and the hydrogen released is much less dangerous than silane, which is pyrophoric.

Le procédé peut se décrire globalement de la manière suivante sur le dessin -1: à la sortie du lieu où ils sont utilisés (1), les gaz transitent par un four à haute température (2) et passent par une trappe (3) où se déposent par gravité les plus grosses particules solides qu'ils charrient. L'adjonction éventuelle d'un filtre (4) après la trappe achève de débarrasser le gaz des dernières particules solides qu'il peut encore contenir avant de parvenir au dernier étage de pompage (5) qui le rejette à l'atmosphère (cela se faisant toutefois au détriment de la conductance). Dans le cas où l'installation est équipée de pompes secondaires (6), le four sera disposé après, de façon à limiter les remontées éventuelles de gaz dans le réacteur. The process can be generally described in the following way in drawing -1: at the exit from the place where they are used (1), the gases pass through a high-temperature oven (2) and pass through a hatch (3) where gravity deposits the largest solid particles they carry. The possible addition of a filter (4) after the trap completes to rid the gas of the last solid particles which it can still contain before reaching the last pumping stage (5) which rejects it to the atmosphere (this is doing however at the expense of conductance). In the case where the installation is equipped with secondary pumps (6), the furnace will be placed afterwards, so as to limit the possible upwelling of gases in the reactor.

La géométrie du four à utiliser n'est pas rigoureusement définie. The geometry of the oven to be used is not strictly defined.

Les processus de fabrication ayant lieu à des pressions de l'ordre de quelques millibars, le four devra, en raison du type d'écoulement, présenter une surface assez grande par rapport aux sections de pompage. Il peut consister en un simple tube. The manufacturing processes taking place at pressures of the order of a few millibars, the furnace must, due to the type of flow, have a fairly large surface area in relation to the pumping sections. It can consist of a simple tube.

Le chauffage du four se fait par l'extérieur, et la température est dictée par le type de gaz utilisé. Pour les très hautes températures, on choisira de préférence le quartz à l'acier inoxydable. The oven is heated from the outside, and the temperature is dictated by the type of gas used. For very high temperatures, quartz will preferably be chosen from stainless steel.

La trappe située après le four peut être munie d'un système de vannes et de purge permettant la vidange sans remise à l'air de l'installation. The hatch located after the oven can be fitted with a valve and purge system allowing the installation to be emptied without putting the system back into the air.

Dans la mesure du possible, les fours seront installés en position verticale, afin de favoriser la chute de résidus de grosse taille vers la trappe. As far as possible, the ovens will be installed in a vertical position, in order to favor the fall of large residues towards the hatch.

Si le dispositif est amovible ou installé de manière très compacte, les brides de fixation et les éléments situés trop près du four devront être refroidis. If the device is removable or installed in a very compact way, the mounting flanges and elements located too close to the oven must be cooled.

Le principal avantage de ce procédé est qu'il permet de transformer aisément et en continu des produits dangereux en résidus plus facilement traitables, cela au sein même d'une installation de production, sans en altérer la durée de vie et sans adjonction de contaminants. The main advantage of this process is that it easily and continuously transforms hazardous products into more easily treatable residues, even within a production facility, without altering their lifespan and without the addition of contaminants.

Claims (1)

REVENDICATION Procédé d'élimination des gaz toxiques de l'industrie des semiconducteurs, caractérisé par le fait que les gaz sont décomposés par traitement thermique à basse pression et que les résidus non gazeux sont récupérés au sein de l'installation.CLAIM Process for removing toxic gases from the semiconductor industry, characterized in that the gases are broken down by heat treatment at low pressure and that the non-gaseous residues are recovered within the installation. La fabrication des semi-conducteurs nécessite un certain nombre de réactions (plasma etching, plasma déposition...) qui mettent en cause des gaz souvent très agressifs.The manufacture of semiconductors requires a certain number of reactions (plasma etching, plasma deposition, etc.) which often involve very aggressive gases. L'utilisation de ces gaz crée un certain nombre de problémes techniques: après usage, ces gaz doivent être décomposés et remis à l'at mosphère; - leur décomposition partielle pendant les processus de fabrica tion génère des sous-produits abrasifs ou chimiquement actifs, ce qui augmente les risques et diminue la durée de vie des installations; - la mise en oeuvre des bouteilles les contenant ou leur rempla cement nécessite des opérations de purge délicates qui libè rent d'assez grandes quantités de gaz contaminés.The use of these gases creates a certain number of technical problems: after use, these gases must be broken down and returned to the att mosphere; - their partial decomposition during the manufacturing processes tion generates abrasive or chemically by-products assets, which increases risks and shortens lifespan installations; - the use of bottles containing them or replacing them cement requires delicate purging operations which frees bring in fairly large amounts of contaminated gas. Il existe à l'heure actuelle un certain nombre de dispositifs permettant de résoudre en partie ces problèmes, par exemple des installations permettant de filtrer en continu les huiles des pompes par où transitent ces gaz.At the present time there are a number of devices which make it possible to partially solve these problems, for example installations making it possible to continuously filter the oils from the pumps through which these gases pass. L'invention consiste à décomposer ces gaz avant leur rejet à l'atmosphère, par traitement thermique à basse pression. Les résidus solides sont récupérés au sein de l'installation, de manière à ne rejeter à l'air libre que des produits non toxiques ou plus faciles à traiter. Ce procédé est applicable à de nombreux gaz.The invention consists in decomposing these gases before their rejection to the atmosphere, by heat treatment at low pressure. Solid residues are collected within the installation, so that only non-toxic or easier-to-treat products are released into the air. This process is applicable to many gases. Le silane (SiH4) par exemple se dissocie totalement aux environs de 700 degrés Celsius. Le silicium qui en résulte peut être évacué sous forme solide, et l'hydrogène libéré est beaucoup moins dangereux que le silane, qui est pyrophorique.Silane (SiH4) for example dissociates completely around 700 degrees Celsius. The resulting silicon can be released in solid form, and the hydrogen released is much less dangerous than silane, which is pyrophoric. Le procédé peut se décrire globalement de la manière suivante sur le dessin -1: à la sortie du lieu où ils sont utilisés (1), les gaz transitent par un four à haute température (2) et passent par une trappe (3) où se déposent par gravité les plus grosses particules solides qu'ils charrient. L'adjonction éventuelle d'un filtre (4) après la trappe achève de débarrasser le gaz des dernières particules solides qu'il peut encore contenir avant de parvenir au dernier étage de pompage (5) qui le rejette à l'atmosphère (cela se faisant toutefois au détriment de la conductance). Dans le cas où l'installation est équipée de pompes secondaires (6), le four sera disposé après, de façon à limiter les remontées éventuelles de gaz dans le réacteur.The process can be generally described in the following way in drawing -1: at the exit from the place where they are used (1), the gases pass through a high-temperature oven (2) and pass through a hatch (3) where gravity deposits the largest solid particles they carry. The possible addition of a filter (4) after the trap completes to rid the gas of the last solid particles which it can still contain before reaching the last pumping stage (5) which rejects it to the atmosphere (this is doing however at the expense of conductance). In the case where the installation is equipped with secondary pumps (6), the furnace will be placed afterwards, so as to limit the possible upwelling of gases in the reactor. La géométrie du four à utiliser n'est pas rigoureusement définie.The geometry of the oven to be used is not strictly defined. Les processus de fabrication ayant lieu à des pressions de l'ordre de quelques millibars, le four devra, en raison du type d'écoulement, présenter une surface assez grande par rapport aux sections de pompage. Il peut consister en un simple tube.The manufacturing processes taking place at pressures of the order of a few millibars, the furnace must, due to the type of flow, have a fairly large surface area in relation to the pumping sections. It can consist of a simple tube. Le chauffage du four se fait par l'extérieur, et la température est dictée par le type de gaz utilisé. Pour les très hautes températures, on choisira de préférence le quartz à l'acier inoxydable.The oven is heated from the outside, and the temperature is dictated by the type of gas used. For very high temperatures, quartz will preferably be chosen from stainless steel. La trappe située après le four peut être munie d'un système de vannes et de purge permettant la vidange sans remise à l'air de l'installation.The hatch located after the oven can be fitted with a valve and purge system allowing the installation to be emptied without putting the system back into the air. Dans la mesure du possible, les fours seront installés en position verticale, afin de favoriser la chute de résidus de grosse taille vers la trappe.As far as possible, the ovens will be installed in a vertical position, in order to favor the fall of large residues towards the hatch. Si le dispositif est amovible ou installé de manière très compacte, les brides de fixation et les éléments situés trop près du four devront être refroidis.If the device is removable or installed in a very compact way, the mounting flanges and elements located too close to the oven must be cooled. Le principal avantage de ce procédé est qu'il permet de transformer aisément et en continu des produits dangereux en résidus plus facilement traitables, cela au sein même d'une installation de production, sans en altérer la durée de vie et sans adjonction de contaminants.The main advantage of this process is that it easily and continuously transforms hazardous products into more easily treatable residues, even within a production facility, without altering their lifespan and without the addition of contaminants. **ATTENTION** fin du champ CLMS peut contenir debut de DESC **.** ATTENTION ** end of the CLMS field may contain start of DESC **.
CH304985A 1985-07-15 1985-07-15 Eliminating toxic gases from semiconductor mfr. - by thermally decomposing them at low pressure and recovering non-gaseous residues CH663549A5 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CH304985A CH663549A5 (en) 1985-07-15 1985-07-15 Eliminating toxic gases from semiconductor mfr. - by thermally decomposing them at low pressure and recovering non-gaseous residues

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Application Number Priority Date Filing Date Title
CH304985A CH663549A5 (en) 1985-07-15 1985-07-15 Eliminating toxic gases from semiconductor mfr. - by thermally decomposing them at low pressure and recovering non-gaseous residues

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0529982A1 (en) * 1991-08-22 1993-03-03 Nec Corporation Exhaust apparatus for epitaxial growth system.
EP0819779A1 (en) * 1996-07-15 1998-01-21 The BOC Group plc Processes for the scrubbing of noxious substances from an exhaust gas

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0529982A1 (en) * 1991-08-22 1993-03-03 Nec Corporation Exhaust apparatus for epitaxial growth system.
US5250092A (en) * 1991-08-22 1993-10-05 Nec Corporation Exhaust apparatus for epitaxial growth system
EP0819779A1 (en) * 1996-07-15 1998-01-21 The BOC Group plc Processes for the scrubbing of noxious substances from an exhaust gas
US5925167A (en) * 1996-07-15 1999-07-20 The Boc Group Plc Processes for the scrubbing of noxious substances

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