CH609814A5 - Regenerative multilayer semiconductor switching device - Google Patents

Regenerative multilayer semiconductor switching device

Info

Publication number
CH609814A5
CH609814A5 CH933875A CH933875A CH609814A5 CH 609814 A5 CH609814 A5 CH 609814A5 CH 933875 A CH933875 A CH 933875A CH 933875 A CH933875 A CH 933875A CH 609814 A5 CH609814 A5 CH 609814A5
Authority
CH
Switzerland
Prior art keywords
regenerative
type
switching device
semiconductor switching
multilayer semiconductor
Prior art date
Application number
CH933875A
Inventor
Jearld Leldon Hutson
Original Assignee
Jearld Leldon Hutson
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jearld Leldon Hutson filed Critical Jearld Leldon Hutson
Publication of CH609814A5 publication Critical patent/CH609814A5/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/87—Thyristor diodes, e.g. Shockley diodes, break-over diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/747—Bidirectional devices, e.g. triacs

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)

Abstract

The device does not require, for its operation, any substantial lateral switching current. This device comprises three layers (72, 76, 80) of N-type semiconductor material and three layers (74, 78, 82) of P-type semiconductor material in alternation, which form a plurality of P-N junctions. The N-type outer layer (72) is connected to a metal electrode (88) forming a cathode terminal and comprises, within a part of its external surface, a seventh layer (84) which is of P+ type and which is highly doped and is connected to a gate electrode (86). A metal electrode (90) makes contact with the highly doped P-type outer layer (82) in order to form an anode terminal. This device can be formed in a single semiconductor body, along with other circuits. <IMAGE>
CH933875A 1974-07-15 1975-07-15 Regenerative multilayer semiconductor switching device CH609814A5 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US48878974A 1974-07-15 1974-07-15

Publications (1)

Publication Number Publication Date
CH609814A5 true CH609814A5 (en) 1979-03-15

Family

ID=23941129

Family Applications (2)

Application Number Title Priority Date Filing Date
CH1346074A CH609714A5 (en) 1974-07-15 1974-01-07 Process for the production of a hydrophilic surface on silicone rubber mouldings
CH933875A CH609814A5 (en) 1974-07-15 1975-07-15 Regenerative multilayer semiconductor switching device

Family Applications Before (1)

Application Number Title Priority Date Filing Date
CH1346074A CH609714A5 (en) 1974-07-15 1974-01-07 Process for the production of a hydrophilic surface on silicone rubber mouldings

Country Status (7)

Country Link
JP (1) JPS5133986A (en)
BE (1) BE831400A (en)
CH (2) CH609714A5 (en)
DE (1) DE2531249A1 (en)
FR (1) FR2279224A1 (en)
GB (1) GB1513000A (en)
NL (1) NL7508200A (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2560441B1 (en) * 1984-02-28 1986-06-13 Telemecanique Electrique TWO-LAYER TRANSMITTER THYRISTOR STRUCTURE FOR HIGH OR HIGH VOLTAGE SWITCHING
FR2574594B1 (en) * 1984-12-11 1987-01-16 Silicium Semiconducteur Ssc INTEGRATED TRIAC STRUCTURE CONTROLLED BY DIAC
US4918505A (en) * 1988-07-19 1990-04-17 Tektronix, Inc. Method of treating an integrated circuit to provide a temperature sensor that is integral therewith
FR2688941B1 (en) * 1992-03-20 1994-06-17 Sgs Thomson Microelectronics ALTERNATIVE VOLTAGE SWITCH TRIGGERED ON A SPECIFIED ALTERNATION AND PERIOD CONDUCTION.
DE19721365A1 (en) * 1997-05-22 1998-11-26 Asea Brown Boveri Controllable thyristor on both sides
US9799731B2 (en) 2013-06-24 2017-10-24 Ideal Power, Inc. Multi-level inverters using sequenced drive of double-base bidirectional bipolar transistors
AU2014302625B2 (en) 2013-06-24 2017-05-11 Ideal Power Inc. Systems, circuits, devices, and methods with bidirectional bipolar transistors
US9742385B2 (en) 2013-06-24 2017-08-22 Ideal Power, Inc. Bidirectional semiconductor switch with passive turnoff
US11637016B2 (en) 2013-12-11 2023-04-25 Ideal Power Inc. Systems and methods for bidirectional device fabrication
US9355853B2 (en) 2013-12-11 2016-05-31 Ideal Power Inc. Systems and methods for bidirectional device fabrication
US9660551B2 (en) 2014-11-06 2017-05-23 Ideal Power, Inc. Operating point optimization with double-base-contact bidirectional bipolar junction transistor circuits, methods, and systems
CN109326640A (en) * 2018-10-25 2019-02-12 深圳市鹏朗贸易有限责任公司 A kind of door pole stream-exchanging thyristor and its manufacturing method

Also Published As

Publication number Publication date
JPS5133986A (en) 1976-03-23
FR2279224A1 (en) 1976-02-13
GB1513000A (en) 1978-06-01
FR2279224B1 (en) 1981-12-24
BE831400A (en) 1976-01-15
NL7508200A (en) 1976-01-19
CH609714A5 (en) 1979-03-15
DE2531249A1 (en) 1976-02-05

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Legal Events

Date Code Title Description
PL Patent ceased