CH572683A5 - - Google Patents

Info

Publication number
CH572683A5
CH572683A5 CH1087274A CH1087274A CH572683A5 CH 572683 A5 CH572683 A5 CH 572683A5 CH 1087274 A CH1087274 A CH 1087274A CH 1087274 A CH1087274 A CH 1087274A CH 572683 A5 CH572683 A5 CH 572683A5
Authority
CH
Switzerland
Application number
CH1087274A
Original Assignee
Bosch Gmbh Robert
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bosch Gmbh Robert filed Critical Bosch Gmbh Robert
Publication of CH572683A5 publication Critical patent/CH572683A5/xx

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/082Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using bipolar transistors
    • H03K19/091Integrated injection logic or merged transistor logic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/72Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73Bipolar junction transistors
    • H01L29/735Lateral transistors
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K23/00Pulse counters comprising counting chains; Frequency dividers comprising counting chains
    • H03K23/002Pulse counters comprising counting chains; Frequency dividers comprising counting chains using semiconductor devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • General Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computing Systems (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Logic Circuits (AREA)
CH1087274A 1973-09-01 1974-08-08 CH572683A5 (xx)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2344244A DE2344244C3 (de) 1973-09-01 1973-09-01 Laterale Transistorstruktur

Publications (1)

Publication Number Publication Date
CH572683A5 true CH572683A5 (xx) 1976-02-13

Family

ID=5891416

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1087274A CH572683A5 (xx) 1973-09-01 1974-08-08

Country Status (9)

Country Link
US (1) US4328509A (xx)
JP (1) JPS5818786B2 (xx)
AT (1) AT373442B (xx)
CH (1) CH572683A5 (xx)
DE (1) DE2344244C3 (xx)
FR (1) FR2246071B1 (xx)
GB (1) GB1488152A (xx)
IT (1) IT1020289B (xx)
NL (1) NL173455C (xx)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4396932A (en) * 1978-06-16 1983-08-02 Motorola, Inc. Method for making a light-activated line-operable zero-crossing switch including two lateral transistors, the emitter of one lying between the emitter and collector of the other
US4345166A (en) * 1979-09-28 1982-08-17 Motorola, Inc. Current source having saturation protection
JPS5947467B2 (ja) * 1981-09-01 1984-11-19 セイコーインスツルメンツ株式会社 温度センサ−用半導体素子
US4573064A (en) * 1981-11-02 1986-02-25 Texas Instruments Incorporated GaAs/GaAlAs Heterojunction bipolar integrated circuit devices
US5023482A (en) * 1982-03-29 1991-06-11 North American Philips Corp. ISL to TTL translator
US4831281A (en) * 1984-04-02 1989-05-16 Motorola, Inc. Merged multi-collector transistor
US4794277A (en) * 1986-01-13 1988-12-27 Unitrode Corporation Integrated circuit under-voltage lockout
US4684877A (en) * 1986-06-17 1987-08-04 General Motors Corporation Electrical system utilizing a concentric collector PNP transistor
US5021856A (en) * 1989-03-15 1991-06-04 Plessey Overseas Limited Universal cell for bipolar NPN and PNP transistors and resistive elements
US5514876A (en) * 1994-04-15 1996-05-07 Trw Inc. Multi-terminal resonant tunneling transistor
US6404038B1 (en) * 2000-03-02 2002-06-11 The United States Of America As Represented By The Secretary Of The Navy Complementary vertical bipolar junction transistors fabricated of silicon-on-sapphire utilizing wide base PNP transistors

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2859286A (en) * 1953-11-12 1958-11-04 Raytheon Mfg Co Variable gain devices
GB887327A (en) * 1957-05-31 1962-01-17 Ibm Improvements in transistors
NL261720A (xx) * 1960-03-04
US3579059A (en) * 1968-03-11 1971-05-18 Nat Semiconductor Corp Multiple collector lateral transistor device
US3643235A (en) * 1968-12-30 1972-02-15 Ibm Monolithic semiconductor memory
DE2106821A1 (de) * 1970-02-13 1971-08-26 Atomic Energy Authority Uk Halbleitervorrichtung
US3713908A (en) * 1970-05-15 1973-01-30 Ibm Method of fabricating lateral transistors and complementary transistors
US3725683A (en) * 1971-02-03 1973-04-03 Wescom Discrete and integrated-type circuit
NL7107040A (xx) * 1971-05-22 1972-11-24
NL7200294A (xx) * 1972-01-08 1973-07-10
DE2212168C2 (de) * 1972-03-14 1982-10-21 Ibm Deutschland Gmbh, 7000 Stuttgart Monolithisch integrierte Halbleiteranordnung
JPS5622044B2 (xx) * 1973-05-24 1981-05-22
US4153909A (en) * 1973-12-10 1979-05-08 National Semiconductor Corporation Gated collector lateral transistor structure and circuits using same

Also Published As

Publication number Publication date
DE2344244C3 (de) 1982-11-25
AT373442B (de) 1984-01-25
NL7411559A (nl) 1975-03-04
IT1020289B (it) 1977-12-20
FR2246071B1 (xx) 1982-06-18
JPS5818786B2 (ja) 1983-04-14
FR2246071A1 (xx) 1975-04-25
GB1488152A (en) 1977-10-05
JPS5056187A (xx) 1975-05-16
NL173455B (nl) 1983-08-16
DE2344244B2 (de) 1978-05-11
US4328509A (en) 1982-05-04
ATA698774A (de) 1983-05-15
NL173455C (nl) 1984-01-16
DE2344244A1 (de) 1975-03-20

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Legal Events

Date Code Title Description
PL Patent ceased