CH568659A5 - - Google Patents

Info

Publication number
CH568659A5
CH568659A5 CH345873A CH345873A CH568659A5 CH 568659 A5 CH568659 A5 CH 568659A5 CH 345873 A CH345873 A CH 345873A CH 345873 A CH345873 A CH 345873A CH 568659 A5 CH568659 A5 CH 568659A5
Authority
CH
Switzerland
Application number
CH345873A
Original Assignee
Teszner Stanislas
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from FR7208446A external-priority patent/FR2174774B1/fr
Priority claimed from FR7239748A external-priority patent/FR2205749B1/fr
Application filed by Teszner Stanislas filed Critical Teszner Stanislas
Publication of CH568659A5 publication Critical patent/CH568659A5/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/037—Diffusion-deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/053—Field effect transistors fets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/088—J-Fet, i.e. junction field effect transistor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/145—Shaped junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
CH345873A 1972-03-10 1973-03-09 CH568659A5 (xx)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR7208446A FR2174774B1 (xx) 1972-03-10 1972-03-10
FR7239748A FR2205749B1 (xx) 1972-11-09 1972-11-09

Publications (1)

Publication Number Publication Date
CH568659A5 true CH568659A5 (xx) 1975-10-31

Family

ID=26216972

Family Applications (1)

Application Number Title Priority Date Filing Date
CH345873A CH568659A5 (xx) 1972-03-10 1973-03-09

Country Status (6)

Country Link
US (1) US3814995A (xx)
JP (1) JPS48103276A (xx)
CH (1) CH568659A5 (xx)
GB (1) GB1396054A (xx)
IT (1) IT981240B (xx)
NL (1) NL7303347A (xx)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3977017A (en) * 1973-04-25 1976-08-24 Sony Corporation Multi-channel junction gated field effect transistor and method of making same
JPS5546068B2 (xx) * 1973-05-22 1980-11-21
JPS5028278A (xx) * 1973-07-11 1975-03-22
JPS50135989A (xx) * 1974-04-06 1975-10-28
JPS50146449U (xx) * 1974-05-21 1975-12-04
US3953879A (en) * 1974-07-12 1976-04-27 Massachusetts Institute Of Technology Current-limiting field effect device
JPS5739062B2 (xx) * 1974-09-04 1982-08-19
JPS5128765A (ja) * 1974-09-04 1976-03-11 Tokyo Shibaura Electric Co Tategatasetsugodenkaikokahandotaisochi
JPS5625030B2 (xx) * 1974-09-10 1981-06-10
JPS5833715B2 (ja) * 1975-04-17 1983-07-21 ソニー株式会社 半導体装置
JPS51132779A (en) * 1975-05-14 1976-11-18 Hitachi Ltd Production method of vertical-junction type field-effect transistor
JPS5299787A (en) * 1976-02-18 1977-08-22 Toshiba Corp Junction type field effect transistor and its production
JPS5832511B2 (ja) * 1976-04-27 1983-07-13 三菱電機株式会社 縦形電界効果トランジスタ
JPS5858816B2 (ja) * 1976-10-19 1983-12-27 三菱電機株式会社 縦型接合形電界効果トランジスタの製造方法
US4331969A (en) * 1976-11-08 1982-05-25 General Electric Company Field-controlled bipolar transistor
JPS621759Y2 (xx) * 1978-03-09 1987-01-16
US4937644A (en) * 1979-11-16 1990-06-26 General Electric Company Asymmetrical field controlled thyristor
JPS5824018B2 (ja) * 1979-12-21 1983-05-18 富士通株式会社 バイポ−ラｉｃの製造方法
JPS5731038U (xx) * 1980-07-28 1982-02-18
US5554561A (en) * 1993-04-30 1996-09-10 Texas Instruments Incorporated Epitaxial overgrowth method

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1377330A (fr) * 1963-07-26 1964-11-06 Perfectionnements aux dispositifs semiconducteurs à effet de champ à canaux multiples intégrés
US3413531A (en) * 1966-09-06 1968-11-26 Ion Physics Corp High frequency field effect transistor
US3497777A (en) * 1967-06-13 1970-02-24 Stanislas Teszner Multichannel field-effect semi-conductor device

Also Published As

Publication number Publication date
US3814995A (en) 1974-06-04
NL7303347A (xx) 1973-09-12
GB1396054A (en) 1975-05-29
IT981240B (it) 1974-10-10
JPS48103276A (xx) 1973-12-25

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Legal Events

Date Code Title Description
PL Patent ceased