CH566081A5 - - Google Patents

Info

Publication number: CH566081A5
Authority: CH; Switzerland

Application number

CH1709373A

Original Assignee

Siemens Ag

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1973-01-08

Filing date

1973-12-06

Publication date

1975-08-29

1973-12-06 Application filed by Siemens Ag filed Critical Siemens Ag

1975-08-29 Publication of CH566081A5 publication Critical patent/CH566081A5/xx

Links

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
- H01L29/7408—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a capacitor or a resistor
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7424—Thyristor-type devices, e.g. having four-zone regenerative action having a built-in localised breakdown/breakover region, e.g. self-protected against destructive spontaneous, e.g. voltage breakover, firing
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7428—Thyristor-type devices, e.g. having four-zone regenerative action having an amplifying gate structure, e.g. cascade (Darlington) configuration

Landscapes

Engineering & Computer Science (AREA)
Power Engineering (AREA)
Microelectronics & Electronic Packaging (AREA)
Physics & Mathematics (AREA)
Ceramic Engineering (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Computer Hardware Design (AREA)
Thyristors (AREA)
Bipolar Transistors (AREA)

CH1709373A 1973-01-08 1973-12-06 CH566081A5 (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
DE19732300754 DE2300754A1 (en)	1973-01-08	1973-01-08	THYRISTOR

Publications (1)

Publication Number	Publication Date
CH566081A5 true CH566081A5 (en)	1975-08-29

Family

ID=5868522

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
CH1709373A CH566081A5 (en)	1973-01-08	1973-12-06

Country Status (8)

Country	Link
JP (1)	JPS5725984B2 (en)
CH (1)	CH566081A5 (en)
DE (1)	DE2300754A1 (en)
FR (1)	FR2213589B1 (en)
GB (1)	GB1417953A (en)
IT (1)	IT1006717B (en)
NL (1)	NL7400189A (en)
SE (1)	SE405527B (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE2538549C2 (en) *	1975-08-29	1985-06-13	Siemens AG, 1000 Berlin und 8000 München	Thyristor controllable with light
JPS52146570A (en) *	1976-05-31	1977-12-06	Toshiba Corp	Reverse conducting thyristor
DE2843960A1 (en) *	1978-10-09	1980-04-10	Licentia Gmbh	STOEROTENTIAL COMPENSATED THYRISTOR WITH AT LEAST FOUR ZONES OF DIFFERENT CONDUCTIVITY TYPES
JPS5660058A (en) *	1979-10-22	1981-05-23	Toshiba Corp	Semiconductor device
US4261000A (en) *	1980-05-23	1981-04-07	General Electric Company	High voltage semiconductor device having an improved dv/dt capability
EP0320738A3 (en) *	1987-12-17	1991-02-06	Siemens Aktiengesellschaft	Thyristor capable of spontaneous firing
EP0343369A1 (en) *	1988-05-19	1989-11-29	Siemens Aktiengesellschaft	Process for manufacturing a thyristor

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
CH436494A (en) *	1966-04-22	1967-05-31	Bbc Brown Boveri & Cie	Controllable semiconductor valve

1973
- 1973-01-08 DE DE19732300754 patent/DE2300754A1/en not_active Withdrawn
- 1973-12-06 CH CH1709373A patent/CH566081A5/xx not_active IP Right Cessation
- 1973-12-21 FR FR7346081A patent/FR2213589B1/fr not_active Expired
- 1973-12-25 JP JP744382A patent/JPS5725984B2/ja not_active Expired
1974
- 1974-01-04 IT IT1906274A patent/IT1006717B/en active
- 1974-01-04 GB GB36674A patent/GB1417953A/en not_active Expired
- 1974-01-07 NL NL7400189A patent/NL7400189A/xx unknown
- 1974-01-07 SE SE7400173A patent/SE405527B/en unknown

Also Published As

Publication number	Publication date
JPS5725984B2 (en)	1982-06-02
SE405527B (en)	1978-12-11
GB1417953A (en)	1975-12-17
NL7400189A (en)	1974-07-10
JPS49104580A (en)	1974-10-03
FR2213589B1 (en)	1979-04-20
DE2300754A1 (en)	1974-07-11
IT1006717B (en)	1976-10-20
FR2213589A1 (en)	1974-08-02

Legal Events

Date	Code	Title	Description
1979-10-15	PL	Patent ceased

Publication	Publication Date	Title
AU476761B2 (en)	1976-09-30
AU465372B2 (en)	1975-09-25
AU474593B2 (en)	1976-07-29
AU474511B2 (en)	1976-07-22
AU474838B2 (en)	1976-08-05
AU465453B2 (en)	1975-09-25
AU465434B2 (en)	1975-09-25
AU471343B2 (en)	1976-04-15
AU450229B2 (en)	1974-07-04
AU476714B2 (en)	1976-09-30
BR7401663D0 (en)	1974-11-05
AU472848B2 (en)	1976-06-03
AU476696B2 (en)	1976-09-30
AU466283B2 (en)	1975-10-23
AU477823B2 (en)	1975-06-19
AU477824B2 (en)	1975-07-17
AU471461B2 (en)	1976-04-29
AU461342B2 (en)	1975-05-22
AU447540B2 (en)	1974-03-25
AU476873B1 (en)	1975-01-09
CH558874A4 (en)	1976-09-30
BG22532A1 (en)	1977-04-20
AU479504A (en)	1975-05-29
AU479458A (en)	1975-02-20
AU479453A (en)	1974-07-25