CH561566A5 - - Google Patents
Info
- Publication number
- CH561566A5 CH561566A5 CH1703370A CH1703370A CH561566A5 CH 561566 A5 CH561566 A5 CH 561566A5 CH 1703370 A CH1703370 A CH 1703370A CH 1703370 A CH1703370 A CH 1703370A CH 561566 A5 CH561566 A5 CH 561566A5
- Authority
- CH
- Switzerland
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
- C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/36—Carbonitrides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/10—Reaction chambers; Selection of materials therefor
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/007—Autodoping
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S65/00—Glass manufacturing
- Y10S65/08—Quartz
Landscapes
- Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Formation Of Insulating Films (AREA)
- Glass Melting And Manufacturing (AREA)
- Surface Treatment Of Glass (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19691957952 DE1957952A1 (de) | 1969-11-18 | 1969-11-18 | Siliciumnitridbeschichtung an Quarzwaenden fuer Diffusions- und Oxydationsreaktoren |
Publications (1)
Publication Number | Publication Date |
---|---|
CH561566A5 true CH561566A5 (ja) | 1975-05-15 |
Family
ID=5751459
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH1703370A CH561566A5 (ja) | 1969-11-18 | 1970-11-18 |
Country Status (9)
Country | Link |
---|---|
US (1) | US3746569A (ja) |
JP (1) | JPS4827494B1 (ja) |
AT (1) | AT299313B (ja) |
CA (1) | CA951621A (ja) |
CH (1) | CH561566A5 (ja) |
DE (1) | DE1957952A1 (ja) |
FR (1) | FR2069342A5 (ja) |
GB (1) | GB1306988A (ja) |
NL (1) | NL7015948A (ja) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL7209294A (ja) * | 1972-07-01 | 1974-01-03 | ||
JPS5120180A (en) * | 1974-08-12 | 1976-02-18 | Shinya Inanyama | Furutaiyano bunrisaidansochi |
US4036653A (en) * | 1975-05-28 | 1977-07-19 | E. I. Du Pont De Nemours And Company | Amorphous silicon nitride composition containing carbon, and vapor phase process |
DE2557079C2 (de) * | 1975-12-18 | 1984-05-24 | Ibm Deutschland Gmbh, 7000 Stuttgart | Verfahren zum Herstellen einer Maskierungsschicht |
JPS5277590A (en) * | 1975-12-24 | 1977-06-30 | Toshiba Corp | Semiconductor producing device |
JPS6032761Y2 (ja) * | 1979-05-11 | 1985-09-30 | 富士通株式会社 | 石英ボ−ト |
US4522849A (en) * | 1981-07-10 | 1985-06-11 | General Electric Company | Method for coating quartz with boron nitride |
DE3441056A1 (de) * | 1984-11-09 | 1986-05-22 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zur verminderung des verschleisses von bei der gasphasenabscheidung von silizium verwendeten quarzteilen |
DE3709066A1 (de) * | 1986-03-31 | 1987-10-01 | Toshiba Kawasaki Kk | Verfahren zum erzeugen eines duennen metallfilms durch chemisches aufdampfen |
US5208069A (en) * | 1991-10-28 | 1993-05-04 | Istituto Guido Donegani S.P.A. | Method for passivating the inner surface by deposition of a ceramic coating of an apparatus subject to coking, apparatus prepared thereby, and method of utilizing apparatus prepared thereby |
JP2531572B2 (ja) * | 1993-08-09 | 1996-09-04 | 東芝セラミックス株式会社 | 石英ガラスの酸窒化方法および表面処理方法 |
US5858464A (en) * | 1997-02-13 | 1999-01-12 | Applied Materials, Inc. | Methods and apparatus for minimizing excess aluminum accumulation in CVD chambers |
DE19726443C2 (de) * | 1997-06-23 | 2003-11-20 | Fraunhofer Ges Forschung | Verfahren zur Oberflächenvergütung innerer Oberflächen von Hohlkörpern und Vorrichtung zur Durchführung des Verfahrens |
US6491971B2 (en) | 2000-11-15 | 2002-12-10 | G.T. Equipment Technologies, Inc | Release coating system for crucibles |
US6533910B2 (en) * | 2000-12-29 | 2003-03-18 | Lam Research Corporation | Carbonitride coated component of semiconductor processing equipment and method of manufacturing thereof |
DE602005007484D1 (de) * | 2004-04-29 | 2008-07-24 | Vesuvius Crucible Co | Tiegel für die kristallisation von silicium |
EP1739209A1 (en) | 2005-07-01 | 2007-01-03 | Vesuvius Crucible Company | Crucible for the crystallization of silicon |
EP2543751A3 (en) * | 2009-07-16 | 2013-06-26 | MEMC Singapore Pte. Ltd. | Coated crucibles and methods for preparing and use thereof |
WO2013055921A1 (en) * | 2011-10-12 | 2013-04-18 | Integrated Photovoltaic, Inc. | Deposition system |
CZ305576B6 (cs) * | 2014-09-25 | 2015-12-16 | Univerzita Karlova v Praze Matematicko- fyzikální fakulta Fyzikální ústav | Způsob a zařízení pro přípravu mikroporézních vrstev nitridu křemíku v křemenných ampulích |
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1969
- 1969-11-18 DE DE19691957952 patent/DE1957952A1/de active Pending
-
1970
- 1970-10-30 NL NL7015948A patent/NL7015948A/xx unknown
- 1970-11-10 US US00088390A patent/US3746569A/en not_active Expired - Lifetime
- 1970-11-13 FR FR7040637A patent/FR2069342A5/fr not_active Expired
- 1970-11-16 AT AT1030070A patent/AT299313B/de not_active IP Right Cessation
- 1970-11-17 GB GB5453370A patent/GB1306988A/en not_active Expired
- 1970-11-18 CH CH1703370A patent/CH561566A5/xx not_active IP Right Cessation
- 1970-11-18 CA CA098,435,A patent/CA951621A/en not_active Expired
- 1970-11-18 JP JP45101161A patent/JPS4827494B1/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
NL7015948A (ja) | 1971-05-21 |
AT299313B (de) | 1972-06-12 |
CA951621A (en) | 1974-07-23 |
JPS4827494B1 (ja) | 1973-08-23 |
FR2069342A5 (ja) | 1971-09-03 |
GB1306988A (en) | 1973-02-14 |
US3746569A (en) | 1973-07-17 |
DE1957952A1 (de) | 1971-05-27 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PL | Patent ceased |