CH549871A - METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE WITH CHANNEL STOPPING ZONES TO PREVENT ANY UNWANTED INVERSION. - Google Patents
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE WITH CHANNEL STOPPING ZONES TO PREVENT ANY UNWANTED INVERSION.Info
- Publication number
- CH549871A CH549871A CH1890272A CH1890272A CH549871A CH 549871 A CH549871 A CH 549871A CH 1890272 A CH1890272 A CH 1890272A CH 1890272 A CH1890272 A CH 1890272A CH 549871 A CH549871 A CH 549871A
- Authority
- CH
- Switzerland
- Prior art keywords
- manufacturing
- prevent
- semiconductor device
- channel stopping
- stopping zones
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
- H01L21/2652—Through-implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0638—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layer, e.g. with channel stopper
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/914—Doping
- Y10S438/919—Compensation doping
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Manufacturing & Machinery (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Ceramic Engineering (AREA)
- Element Separation (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US21304471A | 1971-12-28 | 1971-12-28 |
Publications (1)
Publication Number | Publication Date |
---|---|
CH549871A true CH549871A (en) | 1974-05-31 |
Family
ID=22793512
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH1890272A CH549871A (en) | 1971-12-28 | 1972-12-27 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE WITH CHANNEL STOPPING ZONES TO PREVENT ANY UNWANTED INVERSION. |
Country Status (11)
Country | Link |
---|---|
US (1) | US3728161A (en) |
JP (1) | JPS5543248B2 (en) |
BE (1) | BE793245A (en) |
CA (1) | CA982704A (en) |
CH (1) | CH549871A (en) |
DE (1) | DE2262943C2 (en) |
FR (1) | FR2166103B1 (en) |
GB (1) | GB1420086A (en) |
IT (1) | IT976170B (en) |
NL (1) | NL181696C (en) |
SE (1) | SE380932B (en) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5063886A (en) * | 1973-10-08 | 1975-05-30 | ||
JPS5069975A (en) * | 1973-10-23 | 1975-06-11 | ||
JPS50115981A (en) * | 1974-02-25 | 1975-09-10 | ||
JPS50120990A (en) * | 1974-03-09 | 1975-09-22 | ||
US4011105A (en) * | 1975-09-15 | 1977-03-08 | Mos Technology, Inc. | Field inversion control for n-channel device integrated circuits |
US4076558A (en) * | 1977-01-31 | 1978-02-28 | International Business Machines Corporation | Method of high current ion implantation and charge reduction by simultaneous kerf implant |
JPS5643763A (en) * | 1979-09-17 | 1981-04-22 | Fujitsu Ltd | Manufacture of semiconductor device |
US4315781A (en) * | 1980-04-23 | 1982-02-16 | Hughes Aircraft Company | Method of controlling MOSFET threshold voltage with self-aligned channel stop |
JPS57104244U (en) * | 1980-12-16 | 1982-06-26 | ||
JPS57113286A (en) * | 1980-12-30 | 1982-07-14 | Seiko Epson Corp | Manufacture of semiconductor device |
US4467569A (en) * | 1982-05-03 | 1984-08-28 | Interkal, Inc. | Telescopic risers |
GB2123605A (en) * | 1982-06-22 | 1984-02-01 | Standard Microsyst Smc | MOS integrated circuit structure and method for its fabrication |
EP0126292B1 (en) * | 1983-04-21 | 1987-12-02 | Kabushiki Kaisha Toshiba | Semiconductor device having an element isolation layer and method of manufacturing the same |
JPS59215742A (en) * | 1983-05-24 | 1984-12-05 | Toshiba Corp | Semiconductor device |
US4679303A (en) * | 1983-09-30 | 1987-07-14 | Hughes Aircraft Company | Method of fabricating high density MOSFETs with field aligned channel stops |
JPS6330702U (en) * | 1986-08-11 | 1988-02-29 | ||
JPS63198323A (en) * | 1987-02-13 | 1988-08-17 | Mitsubishi Electric Corp | Semiconductor device and manufacture thereof |
US4967250A (en) * | 1987-05-05 | 1990-10-30 | Hughes Aircraft Company | Charge-coupled device with focused ion beam fabrication |
JPH01503187A (en) * | 1987-05-05 | 1989-10-26 | ヒューズ・エアクラフト・カンパニー | Charge-coupled device with focused ion beam configuration |
US5192993A (en) * | 1988-09-27 | 1993-03-09 | Kabushiki Kaisha Toshiba | Semiconductor device having improved element isolation area |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
USB421061I5 (en) * | 1964-12-24 | |||
US3417464A (en) * | 1965-05-21 | 1968-12-24 | Ibm | Method for fabricating insulated-gate field-effect transistors |
US3472712A (en) * | 1966-10-27 | 1969-10-14 | Hughes Aircraft Co | Field-effect device with insulated gate |
US3515956A (en) * | 1967-10-16 | 1970-06-02 | Ion Physics Corp | High-voltage semiconductor device having a guard ring containing substitutionally active ions in interstitial positions |
GB1261723A (en) * | 1968-03-11 | 1972-01-26 | Associated Semiconductor Mft | Improvements in and relating to semiconductor devices |
US3586542A (en) * | 1968-11-22 | 1971-06-22 | Bell Telephone Labor Inc | Semiconductor junction devices |
NL165005C (en) * | 1969-06-26 | 1981-02-16 | Philips Nv | SEMICONDUCTOR DEVICE CONTAINING FIELD EFFECT TRANSISTORS WITH INSULATED CONTROL ELECTRODE AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE. |
-
1971
- 1971-12-28 US US00213044A patent/US3728161A/en not_active Expired - Lifetime
-
1972
- 1972-07-07 CA CA146,604A patent/CA982704A/en not_active Expired
- 1972-12-15 SE SE7216427A patent/SE380932B/en unknown
- 1972-12-21 GB GB5906772A patent/GB1420086A/en not_active Expired
- 1972-12-22 DE DE2262943A patent/DE2262943C2/en not_active Expired
- 1972-12-22 NL NLAANVRAGE7217516,A patent/NL181696C/en not_active IP Right Cessation
- 1972-12-25 JP JP12943672A patent/JPS5543248B2/ja not_active Expired
- 1972-12-27 CH CH1890272A patent/CH549871A/en not_active IP Right Cessation
- 1972-12-27 FR FR7246502A patent/FR2166103B1/fr not_active Expired
- 1972-12-27 IT IT71099/72A patent/IT976170B/en active
-
1973
- 1973-04-16 BE BE793245D patent/BE793245A/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
NL181696B (en) | 1987-05-04 |
FR2166103A1 (en) | 1973-08-10 |
SE380932B (en) | 1975-11-17 |
CA982704A (en) | 1976-01-27 |
DE2262943A1 (en) | 1973-07-05 |
JPS4874977A (en) | 1973-10-09 |
IT976170B (en) | 1974-08-20 |
JPS5543248B2 (en) | 1980-11-05 |
US3728161A (en) | 1973-04-17 |
GB1420086A (en) | 1976-01-07 |
BE793245A (en) | 1973-04-16 |
NL7217516A (en) | 1973-07-02 |
NL181696C (en) | 1987-10-01 |
DE2262943C2 (en) | 1985-10-10 |
FR2166103B1 (en) | 1977-04-08 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PL | Patent ceased |