CH539953A - Semiconductor component - Google Patents

Semiconductor component

Info

Publication number
CH539953A
CH539953A CH1237172A CH1237172A CH539953A CH 539953 A CH539953 A CH 539953A CH 1237172 A CH1237172 A CH 1237172A CH 1237172 A CH1237172 A CH 1237172A CH 539953 A CH539953 A CH 539953A
Authority
CH
Switzerland
Prior art keywords
semiconductor component
semiconductor
component
Prior art date
Application number
CH1237172A
Other languages
German (de)
Inventor
Peter Dr Voss
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH539953A publication Critical patent/CH539953A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7424—Thyristor-type devices, e.g. having four-zone regenerative action having a built-in localised breakdown/breakover region, e.g. self-protected against destructive spontaneous, e.g. voltage breakover, firing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7428—Thyristor-type devices, e.g. having four-zone regenerative action having an amplifying gate structure, e.g. cascade (Darlington) configuration

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
CH1237172A 1971-11-17 1972-08-21 Semiconductor component CH539953A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19712157091 DE2157091C3 (en) 1971-11-17 1971-11-17 Thyristor with integrated diode

Publications (1)

Publication Number Publication Date
CH539953A true CH539953A (en) 1973-07-31

Family

ID=5825402

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1237172A CH539953A (en) 1971-11-17 1972-08-21 Semiconductor component

Country Status (7)

Country Link
CH (1) CH539953A (en)
DE (1) DE2157091C3 (en)
FR (1) FR2160437B1 (en)
GB (1) GB1360326A (en)
IT (1) IT970856B (en)
NL (1) NL7215042A (en)
SE (1) SE387199B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5413959B2 (en) * 1973-10-17 1979-06-04
JPS52146570A (en) * 1976-05-31 1977-12-06 Toshiba Corp Reverse conducting thyristor

Also Published As

Publication number Publication date
FR2160437B1 (en) 1977-12-30
GB1360326A (en) 1974-07-17
NL7215042A (en) 1973-05-21
DE2157091C3 (en) 1979-02-01
IT970856B (en) 1974-04-20
SE387199B (en) 1976-08-30
FR2160437A1 (en) 1973-06-29
DE2157091B2 (en) 1978-06-01
DE2157091A1 (en) 1973-05-24

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Legal Events

Date Code Title Description
PL Patent ceased