CH525026A - Verfahren zur Herstellung eines Magnesium-Aluminium-Spinell-Einkristalls - Google Patents

Verfahren zur Herstellung eines Magnesium-Aluminium-Spinell-Einkristalls

Info

Publication number
CH525026A
CH525026A CH927969A CH927969A CH525026A CH 525026 A CH525026 A CH 525026A CH 927969 A CH927969 A CH 927969A CH 927969 A CH927969 A CH 927969A CH 525026 A CH525026 A CH 525026A
Authority
CH
Switzerland
Prior art keywords
magnesium
aluminum
production
single crystal
spinel single
Prior art date
Application number
CH927969A
Other languages
English (en)
Inventor
Josef Dr Grabmeier
Original Assignee
Siemens Ag Westberlin Und Muen
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag Westberlin Und Muen filed Critical Siemens Ag Westberlin Und Muen
Publication of CH525026A publication Critical patent/CH525026A/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/36—Single-crystal growth by pulling from a melt, e.g. Czochralski method characterised by the seed, e.g. its crystallographic orientation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/26—Complex oxides with formula BMe2O4, wherein B is Mg, Ni, Co, Al, Zn, or Cd and Me is Fe, Ga, Sc, Cr, Co, or Al
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/967—Semiconductor on specified insulator

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
CH927969A 1968-06-20 1969-06-18 Verfahren zur Herstellung eines Magnesium-Aluminium-Spinell-Einkristalls CH525026A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19681769635 DE1769635A1 (de) 1968-06-20 1968-06-20 Duenne Halbleiter-Aufwachsschicht auf tonerdearmen,tiegelgezogenem Magnesium-Aluminium-Spinell-Einkristall,sowie Verfahren zur Herstellung der Schicht und zur Herstellung der Einkristalle

Publications (1)

Publication Number Publication Date
CH525026A true CH525026A (de) 1972-07-15

Family

ID=5700215

Family Applications (1)

Application Number Title Priority Date Filing Date
CH927969A CH525026A (de) 1968-06-20 1969-06-18 Verfahren zur Herstellung eines Magnesium-Aluminium-Spinell-Einkristalls

Country Status (9)

Country Link
US (1) US3625868A (de)
JP (1) JPS499907B1 (de)
AT (1) AT310252B (de)
CH (1) CH525026A (de)
DE (1) DE1769635A1 (de)
FR (1) FR1599437A (de)
GB (1) GB1229508A (de)
NL (1) NL6909488A (de)
SE (1) SE361418B (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3883313A (en) * 1972-12-14 1975-05-13 Rca Corp Modified czochralski-grown magnesium aluminate spinel and method of making same
US3917462A (en) * 1974-07-26 1975-11-04 Union Carbide Corp Method of producing sodium beta-alumina single crystals
DE3840609A1 (de) * 1988-12-02 1990-06-07 Maier Kg Andreas Laserskalpell
US6839362B2 (en) * 2001-05-22 2005-01-04 Saint-Gobain Ceramics & Plastics, Inc. Cobalt-doped saturable absorber Q-switches and laser systems
US6844084B2 (en) * 2002-04-03 2005-01-18 Saint-Gobain Ceramics & Plastics, Inc. Spinel substrate and heteroepitaxial growth of III-V materials thereon
US20050061230A1 (en) * 2003-09-23 2005-03-24 Saint-Gobain Ceramics & Plastics, Inc. Spinel articles and methods for forming same
US7045223B2 (en) * 2003-09-23 2006-05-16 Saint-Gobain Ceramics & Plastics, Inc. Spinel articles and methods for forming same
US7326477B2 (en) * 2003-09-23 2008-02-05 Saint-Gobain Ceramics & Plastics, Inc. Spinel boules, wafers, and methods for fabricating same
US7919815B1 (en) 2005-02-24 2011-04-05 Saint-Gobain Ceramics & Plastics, Inc. Spinel wafers and methods of preparation
CN109668862B (zh) * 2017-10-17 2021-02-05 中国科学院沈阳自动化研究所 一种基于激光诱导击穿光谱的铝电解质分子比检测方法

Also Published As

Publication number Publication date
GB1229508A (de) 1971-04-21
DE1769635A1 (de) 1972-03-30
JPS499907B1 (de) 1974-03-07
AT310252B (de) 1973-09-25
NL6909488A (de) 1969-12-23
SE361418B (de) 1973-11-05
FR1599437A (de) 1970-07-15
US3625868A (en) 1971-12-07

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Legal Events

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