CH519251A - Integrierte Halbleiterschaltung zur Speicherung von Daten - Google Patents

Integrierte Halbleiterschaltung zur Speicherung von Daten

Info

Publication number
CH519251A
CH519251A CH995770A CH995770A CH519251A CH 519251 A CH519251 A CH 519251A CH 995770 A CH995770 A CH 995770A CH 995770 A CH995770 A CH 995770A CH 519251 A CH519251 A CH 519251A
Authority
CH
Switzerland
Prior art keywords
storing data
semiconductor circuit
integrated semiconductor
integrated
circuit
Prior art date
Application number
CH995770A
Other languages
English (en)
Inventor
W Dr Jutzi Wilhelm
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Priority to CH995770A priority Critical patent/CH519251A/de
Priority to DE19712125451 priority patent/DE2125451A1/de
Priority to GB1710771A priority patent/GB1356159A/en
Priority to FR7122133A priority patent/FR2097094B1/fr
Priority to CA116233A priority patent/CA936614A/en
Priority to US00158465A priority patent/US3751687A/en
Publication of CH519251A publication Critical patent/CH519251A/de

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B10/00Static random access memory [SRAM] devices
    • H10B10/15Static random access memory [SRAM] devices comprising a resistor load element
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C15/00Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
    • G11C15/04Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/765Making of isolation regions between components by field effect
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0727Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B10/00Static random access memory [SRAM] devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
CH995770A 1970-07-01 1970-07-01 Integrierte Halbleiterschaltung zur Speicherung von Daten CH519251A (de)

Priority Applications (6)

Application Number Priority Date Filing Date Title
CH995770A CH519251A (de) 1970-07-01 1970-07-01 Integrierte Halbleiterschaltung zur Speicherung von Daten
DE19712125451 DE2125451A1 (de) 1970-07-01 1971-05-22 Integrierte Halbleiterschaltung zur Speicherung von Daten
GB1710771A GB1356159A (en) 1970-07-01 1971-05-26 Semiconductor data storage circuit
FR7122133A FR2097094B1 (de) 1970-07-01 1971-06-15
CA116233A CA936614A (en) 1970-07-01 1971-06-22 Integrated semiconductor circuit for data storage
US00158465A US3751687A (en) 1970-07-01 1971-06-30 Integrated semiconductor circuit for data storage

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH995770A CH519251A (de) 1970-07-01 1970-07-01 Integrierte Halbleiterschaltung zur Speicherung von Daten

Publications (1)

Publication Number Publication Date
CH519251A true CH519251A (de) 1972-02-15

Family

ID=4357544

Family Applications (1)

Application Number Title Priority Date Filing Date
CH995770A CH519251A (de) 1970-07-01 1970-07-01 Integrierte Halbleiterschaltung zur Speicherung von Daten

Country Status (6)

Country Link
US (1) US3751687A (de)
CA (1) CA936614A (de)
CH (1) CH519251A (de)
DE (1) DE2125451A1 (de)
FR (1) FR2097094B1 (de)
GB (1) GB1356159A (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5356484A (en) * 1992-03-30 1994-10-18 Yater Joseph C Reversible thermoelectric converter
EP0585059B1 (de) * 1992-08-21 1999-05-12 STMicroelectronics, Inc. Verfahren zur Herstellung einer Halbleiter-Speicherstruktur vom vertikalen Typ und nach dem Verfahren hergestellte Struktur
KR101256467B1 (ko) * 2012-02-06 2013-04-19 삼성전자주식회사 질화물계 이종접합 반도체 소자 및 그 제조 방법
KR101256466B1 (ko) * 2012-02-06 2013-04-19 삼성전자주식회사 질화물계 이종접합 반도체 소자 및 그 제조 방법

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3423737A (en) * 1965-06-21 1969-01-21 Ibm Nondestructive read transistor memory cell
US3422282A (en) * 1965-08-24 1969-01-14 Us Army Level conversion circuit for interfacing logic systems
US3492661A (en) * 1965-12-17 1970-01-27 Ibm Monolithic associative memory cell
US3564300A (en) * 1968-03-06 1971-02-16 Ibm Pulse power data storage cell
US3573505A (en) * 1968-07-15 1971-04-06 Ibm Bistable circuit and memory cell
US3540010A (en) * 1968-08-27 1970-11-10 Bell Telephone Labor Inc Diode-coupled semiconductive memory
NL6813833A (de) * 1968-09-27 1970-04-01
US3588846A (en) * 1968-12-05 1971-06-28 Ibm Storage cell with variable power level
US3573758A (en) * 1969-02-27 1971-04-06 Ibm Non-linear impedance means for transistors connected to each other and to a common power source
US3610967A (en) * 1970-02-27 1971-10-05 Ibm Integrated memory cell circuit
US3618046A (en) * 1970-03-09 1971-11-02 Cogar Corp Bilevel semiconductor memory circuit with high-speed word driver

Also Published As

Publication number Publication date
US3751687A (en) 1973-08-07
FR2097094A1 (de) 1972-03-03
CA936614A (en) 1973-11-06
FR2097094B1 (de) 1976-07-09
DE2125451A1 (de) 1972-01-05
GB1356159A (en) 1974-06-12

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Legal Events

Date Code Title Description
PL Patent ceased