CH489913A - Feldeffekttransistor und Verfahren zu seiner Herstellung - Google Patents

Feldeffekttransistor und Verfahren zu seiner Herstellung

Info

Publication number
CH489913A
CH489913A CH1522568A CH1522568A CH489913A CH 489913 A CH489913 A CH 489913A CH 1522568 A CH1522568 A CH 1522568A CH 1522568 A CH1522568 A CH 1522568A CH 489913 A CH489913 A CH 489913A
Authority
CH
Switzerland
Prior art keywords
manufacture
field effect
effect transistor
transistor
field
Prior art date
Application number
CH1522568A
Other languages
English (en)
Inventor
Marius Brown Dale
Ernest Engeler William
Vance Gray Peter
Garfinkel Marvin
Original Assignee
Gen Electric
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gen Electric filed Critical Gen Electric
Publication of CH489913A publication Critical patent/CH489913A/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/043—Dual dielectric
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/053—Field effect transistors fets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/103—Mask, dual function, e.g. diffusion and oxidation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/105—Masks, metal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/106—Masks, special

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
CH1522568A 1967-10-13 1968-10-11 Feldeffekttransistor und Verfahren zu seiner Herstellung CH489913A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US67522867A 1967-10-13 1967-10-13

Publications (1)

Publication Number Publication Date
CH489913A true CH489913A (de) 1970-04-30

Family

ID=24709573

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1522568A CH489913A (de) 1967-10-13 1968-10-11 Feldeffekttransistor und Verfahren zu seiner Herstellung

Country Status (9)

Country Link
US (1) US3566517A (de)
JP (1) JPS4931833B1 (de)
BR (1) BR6802966D0 (de)
CH (1) CH489913A (de)
DE (1) DE1803028B2 (de)
FR (1) FR1587468A (de)
GB (1) GB1245116A (de)
NL (1) NL157749C (de)
SE (1) SE339725B (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2096436A1 (de) * 1970-06-23 1972-02-18 Gen Electric

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3698078A (en) * 1969-12-22 1972-10-17 Gen Electric Diode array storage system having a self-registered target and method of forming
US3730787A (en) * 1970-08-26 1973-05-01 Bell Telephone Labor Inc Method of fabricating semiconductor integrated circuits using deposited doped oxides as a source of dopant impurities
US3724065A (en) * 1970-10-01 1973-04-03 Texas Instruments Inc Fabrication of an insulated gate field effect transistor device
US3745647A (en) * 1970-10-07 1973-07-17 Rca Corp Fabrication of semiconductor devices
US3798083A (en) * 1971-04-15 1974-03-19 Monsanto Co Fabrication of semiconductor devices
US3728784A (en) * 1971-04-15 1973-04-24 Monsanto Co Fabrication of semiconductor devices
US3728785A (en) * 1971-04-15 1973-04-24 Monsanto Co Fabrication of semiconductor devices
US3897286A (en) * 1974-06-21 1975-07-29 Gen Electric Method of aligning edges of emitter and its metalization in a semiconductor device
JPS5158045U (de) * 1974-10-31 1976-05-07
DE2454412A1 (de) * 1974-11-16 1976-05-26 Licentia Gmbh Verfahren zum dotieren eines halbleiterkoerpers durch diffusion aus der gasphase
US4282647A (en) * 1978-04-04 1981-08-11 Standard Microsystems Corporation Method of fabricating high density refractory metal gate MOS integrated circuits utilizing the gate as a selective diffusion and oxidation mask
US4557036A (en) * 1982-03-31 1985-12-10 Nippon Telegraph & Telephone Public Corp. Semiconductor device and process for manufacturing the same
US6149269A (en) * 1997-04-18 2000-11-21 Madison; Julie B. Eyeglasses having magnetically held auxiliary lenses

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2096436A1 (de) * 1970-06-23 1972-02-18 Gen Electric

Also Published As

Publication number Publication date
FR1587468A (de) 1970-03-20
BR6802966D0 (pt) 1973-01-04
NL157749C (nl) 1980-12-15
NL6814191A (de) 1969-04-15
SE339725B (de) 1971-10-18
DE1803028A1 (de) 1971-02-11
US3566517A (en) 1971-03-02
DE1803028B2 (de) 1973-03-08
JPS4931833B1 (de) 1974-08-24
GB1245116A (en) 1971-09-08

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Legal Events

Date Code Title Description
PL Patent ceased