CH485327A - Verfahren zum Herstellen von Fotolackmasken für Halbleiterzwecke - Google Patents
Verfahren zum Herstellen von Fotolackmasken für HalbleiterzweckeInfo
- Publication number
- CH485327A CH485327A CH1581068A CH1581068A CH485327A CH 485327 A CH485327 A CH 485327A CH 1581068 A CH1581068 A CH 1581068A CH 1581068 A CH1581068 A CH 1581068A CH 485327 A CH485327 A CH 485327A
- Authority
- CH
- Switzerland
- Prior art keywords
- production
- photoresist masks
- semiconductor purposes
- semiconductor
- purposes
- Prior art date
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/143—Electron beam
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Analytical Chemistry (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Electron Beam Exposure (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DES0112516 | 1967-10-23 |
Publications (1)
Publication Number | Publication Date |
---|---|
CH485327A true CH485327A (de) | 1970-01-31 |
Family
ID=7531832
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH1581068A CH485327A (de) | 1967-10-23 | 1968-10-23 | Verfahren zum Herstellen von Fotolackmasken für Halbleiterzwecke |
Country Status (8)
Country | Link |
---|---|
US (1) | US3607382A (de) |
AT (1) | AT301620B (de) |
CH (1) | CH485327A (de) |
DE (1) | DE1614635A1 (de) |
FR (1) | FR1589571A (de) |
GB (1) | GB1230469A (de) |
NL (1) | NL6813891A (de) |
SE (1) | SE331315B (de) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2234659A1 (de) * | 1973-06-19 | 1975-01-17 | Westinghouse Electric Corp | |
FR2472213A1 (fr) * | 1979-12-18 | 1981-06-26 | Philips Nv | Fabrication de circuit microminiature a l'etat solide et circuits ainsi obtenus |
AT391224B (de) * | 1988-01-26 | 1990-09-10 | Thallner Erich | Belichtungseinrichtung fuer lichtempfindlich gemachte substrate |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1328803A (en) * | 1969-12-17 | 1973-09-05 | Mullard Ltd | Methods of manufacturing semiconductor devices |
US3779806A (en) * | 1972-03-24 | 1973-12-18 | Ibm | Electron beam sensitive polymer t-butyl methacrylate resist |
US3900737A (en) * | 1974-04-18 | 1975-08-19 | Bell Telephone Labor Inc | Electron beam exposure system |
US4035522A (en) * | 1974-07-19 | 1977-07-12 | International Business Machines Corporation | X-ray lithography mask |
FR2294489A1 (fr) * | 1974-12-13 | 1976-07-09 | Thomson Csf | Dispositif pour le trace programme de dessins par bombardement de particules |
US4576884A (en) * | 1984-06-14 | 1986-03-18 | Microelectronics Center Of North Carolina | Method and apparatus for exposing photoresist by using an electron beam and controlling its voltage and charge |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3330696A (en) * | 1967-07-11 | Method of fabricating thin film capacitors | ||
US2705764A (en) * | 1950-02-25 | 1955-04-05 | Rca Corp | Dual-area target electrodes and methods of making the same |
US2968723A (en) * | 1957-04-11 | 1961-01-17 | Zeiss Carl | Means for controlling crystal structure of materials |
US3113896A (en) * | 1961-01-31 | 1963-12-10 | Space Technology Lab Inc | Electron beam masking for etching electrical circuits |
NL297262A (de) * | 1962-09-04 | |||
NL294370A (de) * | 1963-06-20 | |||
US3364087A (en) * | 1964-04-27 | 1968-01-16 | Varian Associates | Method of using laser to coat or etch substrate |
US3388000A (en) * | 1964-09-18 | 1968-06-11 | Texas Instruments Inc | Method of forming a metal contact on a semiconductor device |
US3326176A (en) * | 1964-10-27 | 1967-06-20 | Nat Res Corp | Work-registration device including ionic beam probe |
-
1967
- 1967-10-23 DE DE19671614635 patent/DE1614635A1/de active Pending
- 1967-10-23 AT AT10251/68A patent/AT301620B/de not_active IP Right Cessation
-
1968
- 1968-09-27 NL NL6813891A patent/NL6813891A/xx unknown
- 1968-10-18 US US768797A patent/US3607382A/en not_active Expired - Lifetime
- 1968-10-18 FR FR1589571D patent/FR1589571A/fr not_active Expired
- 1968-10-22 GB GB1230469D patent/GB1230469A/en not_active Expired
- 1968-10-23 CH CH1581068A patent/CH485327A/de not_active IP Right Cessation
- 1968-10-23 SE SE14341/68A patent/SE331315B/xx unknown
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2234659A1 (de) * | 1973-06-19 | 1975-01-17 | Westinghouse Electric Corp | |
FR2472213A1 (fr) * | 1979-12-18 | 1981-06-26 | Philips Nv | Fabrication de circuit microminiature a l'etat solide et circuits ainsi obtenus |
AT391224B (de) * | 1988-01-26 | 1990-09-10 | Thallner Erich | Belichtungseinrichtung fuer lichtempfindlich gemachte substrate |
Also Published As
Publication number | Publication date |
---|---|
GB1230469A (de) | 1971-05-05 |
AT301620B (de) | 1972-08-15 |
SE331315B (de) | 1970-12-21 |
FR1589571A (de) | 1970-03-31 |
US3607382A (en) | 1971-09-21 |
NL6813891A (de) | 1969-04-25 |
DE1614635A1 (de) | 1970-03-26 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PL | Patent ceased |