CH474155A - Gleichrichter, bestehend aus einem im wesentlichen einkristallinen Halbleiterkörper - Google Patents
Gleichrichter, bestehend aus einem im wesentlichen einkristallinen HalbleiterkörperInfo
- Publication number
- CH474155A CH474155A CH275868A CH275868A CH474155A CH 474155 A CH474155 A CH 474155A CH 275868 A CH275868 A CH 275868A CH 275868 A CH275868 A CH 275868A CH 474155 A CH474155 A CH 474155A
- Authority
- CH
- Switzerland
- Prior art keywords
- rectifier
- semiconductor body
- crystal semiconductor
- essentially single
- essentially
- Prior art date
Links
- 239000013078 crystal Substances 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Battery Electrode And Active Subsutance (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DES0108919 | 1967-03-18 |
Publications (1)
Publication Number | Publication Date |
---|---|
CH474155A true CH474155A (de) | 1969-06-15 |
Family
ID=7529128
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH275868A CH474155A (de) | 1967-03-18 | 1968-02-26 | Gleichrichter, bestehend aus einem im wesentlichen einkristallinen Halbleiterkörper |
Country Status (6)
Country | Link |
---|---|
AT (1) | AT271631B (de) |
BE (1) | BE712344A (de) |
CH (1) | CH474155A (de) |
DE (1) | DE1614460A1 (de) |
FR (1) | FR1556168A (de) |
NL (1) | NL6803815A (de) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2608432C3 (de) * | 1976-03-01 | 1981-07-09 | Siemens AG, 1000 Berlin und 8000 München | Leistungsdiode |
DE3328521C2 (de) * | 1983-08-06 | 1985-11-14 | SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg | Gleichrichterdiode für hohe Sperrspannung |
EP1014453B1 (de) * | 1997-08-14 | 2016-04-27 | Mitsubishi Denki Kabushiki Kaisha | Halbleitervorrichtung |
-
1967
- 1967-03-18 DE DE19671614460 patent/DE1614460A1/de active Pending
-
1968
- 1968-02-16 AT AT147968A patent/AT271631B/de active
- 1968-02-26 CH CH275868A patent/CH474155A/de not_active IP Right Cessation
- 1968-03-14 FR FR143817A patent/FR1556168A/fr not_active Expired
- 1968-03-18 BE BE712344A patent/BE712344A/xx unknown
- 1968-03-18 NL NL6803815A patent/NL6803815A/xx unknown
Also Published As
Publication number | Publication date |
---|---|
AT271631B (de) | 1969-06-10 |
DE1614460A1 (de) | 1970-08-13 |
NL6803815A (de) | 1968-09-19 |
BE712344A (de) | 1968-09-18 |
FR1556168A (de) | 1969-01-31 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PL | Patent ceased |