CH460957A - Schaltungsanordnung mit mehreren Halbleiterelementen - Google Patents

Schaltungsanordnung mit mehreren Halbleiterelementen

Info

Publication number
CH460957A
CH460957A CH1098067A CH1098067A CH460957A CH 460957 A CH460957 A CH 460957A CH 1098067 A CH1098067 A CH 1098067A CH 1098067 A CH1098067 A CH 1098067A CH 460957 A CH460957 A CH 460957A
Authority
CH
Switzerland
Prior art keywords
circuit arrangement
semiconductor elements
several semiconductor
several
elements
Prior art date
Application number
CH1098067A
Other languages
English (en)
Inventor
Werner Dipl Ing Faust
Original Assignee
Bbc Brown Boveri & Cie
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bbc Brown Boveri & Cie filed Critical Bbc Brown Boveri & Cie
Priority to CH1098067A priority Critical patent/CH460957A/de
Priority to DE19671589470 priority patent/DE1589470A1/de
Priority to FR1575259D priority patent/FR1575259A/fr
Priority to GB1234447D priority patent/GB1234447A/en
Priority to SE10410/68A priority patent/SE351525B/xx
Publication of CH460957A publication Critical patent/CH460957A/de
Priority to US00088468A priority patent/US3708732A/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0203Containers; Encapsulations, e.g. encapsulation of photodiodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688Integrated circuits having a three-dimensional layout
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Ceramic Engineering (AREA)
  • Thyristors (AREA)
  • Light Receiving Elements (AREA)
CH1098067A 1967-08-03 1967-08-03 Schaltungsanordnung mit mehreren Halbleiterelementen CH460957A (de)

Priority Applications (6)

Application Number Priority Date Filing Date Title
CH1098067A CH460957A (de) 1967-08-03 1967-08-03 Schaltungsanordnung mit mehreren Halbleiterelementen
DE19671589470 DE1589470A1 (de) 1967-08-03 1967-09-08 Schaltung mit mehreren Halbleiterelementen
FR1575259D FR1575259A (de) 1967-08-03 1968-07-31
GB1234447D GB1234447A (de) 1967-08-03 1968-08-01
SE10410/68A SE351525B (de) 1967-08-03 1968-08-01
US00088468A US3708732A (en) 1967-08-03 1970-11-10 Compound electrical circuit unit comprising a main power type thyristor and auxiliary control semiconductor elements structurally and electrically united to form a compact assembly

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH1098067A CH460957A (de) 1967-08-03 1967-08-03 Schaltungsanordnung mit mehreren Halbleiterelementen

Publications (1)

Publication Number Publication Date
CH460957A true CH460957A (de) 1968-08-15

Family

ID=4368794

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1098067A CH460957A (de) 1967-08-03 1967-08-03 Schaltungsanordnung mit mehreren Halbleiterelementen

Country Status (6)

Country Link
US (1) US3708732A (de)
CH (1) CH460957A (de)
DE (1) DE1589470A1 (de)
FR (1) FR1575259A (de)
GB (1) GB1234447A (de)
SE (1) SE351525B (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3913040A (en) * 1974-05-03 1975-10-14 Rca Corp Microstrip carrier for high frequency semiconductor devices
GB1499203A (en) * 1975-02-04 1978-01-25 Standard Telephones Cables Ltd Thyristor structure to facilitate zero point switching
US3975758A (en) * 1975-05-27 1976-08-17 Westinghouse Electric Corporation Gate assist turn-off, amplifying gate thyristor and a package assembly therefor
US4047219A (en) * 1975-11-03 1977-09-06 General Electric Company Radiation sensitive thyristor structure with isolated detector
US4136357A (en) * 1977-10-03 1979-01-23 National Semiconductor Corporation Integrated circuit package with optical input coupler
DE3226613A1 (de) * 1982-07-16 1984-01-19 Siemens AG, 1000 Berlin und 8000 München Lichtzuendbarer thyristor mit geringem lichtleistungsbedarf
DE3226624A1 (de) * 1982-07-16 1984-01-19 Siemens AG, 1000 Berlin und 8000 München Lichtzuendbarer thyristor mit geringem lichtleistungsbedarf und hoher kritischer spannungsanstiegsgeschwindigkeit
DE19708873A1 (de) * 1997-03-05 1998-09-10 Asea Brown Boveri Gateeinheit für einen hart angesteuerten GTO

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE335389B (de) * 1966-10-25 1971-05-24 Asea Ab
US3489962A (en) * 1966-12-19 1970-01-13 Gen Electric Semiconductor switching device with emitter gate
US3440501A (en) * 1967-02-02 1969-04-22 Gen Electric Double-triggering semiconductor controlled rectifier
US3505527A (en) * 1967-04-06 1970-04-07 Bell Telephone Labor Inc Electronic drive circuit employing successively enabled multistate impedance elements

Also Published As

Publication number Publication date
GB1234447A (de) 1971-06-03
SE351525B (de) 1972-11-27
FR1575259A (de) 1969-07-18
DE1589470A1 (de) 1970-03-05
US3708732A (en) 1973-01-02

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