CH441240A - Verfahren zum Herstellen einer halbleitenden Verbindung aus zwei oder mehreren Komponenten - Google Patents
Verfahren zum Herstellen einer halbleitenden Verbindung aus zwei oder mehreren KomponentenInfo
- Publication number
- CH441240A CH441240A CH1035461A CH1035461A CH441240A CH 441240 A CH441240 A CH 441240A CH 1035461 A CH1035461 A CH 1035461A CH 1035461 A CH1035461 A CH 1035461A CH 441240 A CH441240 A CH 441240A
- Authority
- CH
- Switzerland
- Prior art keywords
- producing
- components
- semiconducting connection
- semiconducting
- connection
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F9/00—Making metallic powder or suspensions thereof
- B22F9/16—Making metallic powder or suspensions thereof using chemical processes
- B22F9/30—Making metallic powder or suspensions thereof using chemical processes with decomposition of metal compounds, e.g. by pyrolysis
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B19/00—Selenium; Tellurium; Compounds thereof
- C01B19/007—Tellurides or selenides of metals
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B25/00—Phosphorus; Compounds thereof
- C01B25/06—Hydrogen phosphides
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G30/00—Compounds of antimony
- C01G30/008—Sulfides
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/007—Preparing arsenides or antimonides, especially of the III-VI-compound type, e.g. aluminium or gallium arsenide
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/60—Optical properties, e.g. expressed in CIELAB-values
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/056—Gallium arsenide
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/065—Gp III-V generic compounds-processing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S420/00—Alloys or metallic compositions
- Y10S420/903—Semiconductive
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DES70592A DE1281404B (de) | 1960-09-28 | 1960-09-28 | Verfahren zur Herstellung einer halbleitenden Verbindung mit zwei oder mehr Komponenten |
Publications (1)
Publication Number | Publication Date |
---|---|
CH441240A true CH441240A (de) | 1967-08-15 |
Family
ID=7501851
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH1035461A CH441240A (de) | 1960-09-28 | 1961-09-06 | Verfahren zum Herstellen einer halbleitenden Verbindung aus zwei oder mehreren Komponenten |
Country Status (6)
Country | Link |
---|---|
US (1) | US3342551A (de) |
BE (1) | BE608496A (de) |
CH (1) | CH441240A (de) |
DE (1) | DE1281404B (de) |
GB (1) | GB1010063A (de) |
NL (1) | NL269557A (de) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3492175A (en) * | 1965-12-17 | 1970-01-27 | Texas Instruments Inc | Method of doping semiconductor material |
US3462323A (en) * | 1966-12-05 | 1969-08-19 | Monsanto Co | Process for the preparation of compound semiconductors |
SU570239A1 (ru) * | 1976-02-12 | 1979-02-10 | Институт химии АН СССР | "Способ получени кристаллических соединений а1у ву14 |
US4594264A (en) * | 1984-11-20 | 1986-06-10 | Hughes Aircraft Company | Method for forming gallium arsenide from thin solid films of gallium-arsenic complexes |
US4814203A (en) * | 1986-09-29 | 1989-03-21 | Ethyl Corporation | Vapor deposition of arsenic |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2020298A (en) * | 1935-11-12 | Cyclic ester | ||
US2464685A (en) * | 1946-12-02 | 1949-03-15 | Diamond Alkali Co | Continuous grignard method |
AT211792B (de) * | 1953-10-02 | 1960-11-10 | Int Standard Electric Corp | Verfahren zur Herstellung von Kristalliten oder einem Einkristall aus einen Gehalt an Störstoffen besitzendem halbleitendem Material bzw. von Halbleiterlegierungen |
US2980500A (en) * | 1958-04-25 | 1961-04-18 | Monsanto Chemicals | Method for the preparation of semiconductor cadmium compounds |
US3010792A (en) * | 1959-08-31 | 1961-11-28 | Union Carbide Corp | Preparation of indium phosphide |
-
0
- NL NL269557D patent/NL269557A/xx unknown
-
1960
- 1960-09-28 DE DES70592A patent/DE1281404B/de active Pending
-
1961
- 1961-09-06 CH CH1035461A patent/CH441240A/de unknown
- 1961-09-25 BE BE608496A patent/BE608496A/fr unknown
- 1961-09-28 GB GB34990/61A patent/GB1010063A/en not_active Expired
- 1961-09-28 US US141488A patent/US3342551A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US3342551A (en) | 1967-09-19 |
NL269557A (de) | |
GB1010063A (en) | 1965-11-17 |
BE608496A (fr) | 1962-01-15 |
DE1281404B (de) | 1968-10-24 |
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