CH438232A - Verfahren zum Herstellen eines dotierten Halbleiterkörpers und Vorrichtung zum Durchführen dieses Verfahrens - Google Patents
Verfahren zum Herstellen eines dotierten Halbleiterkörpers und Vorrichtung zum Durchführen dieses VerfahrensInfo
- Publication number
- CH438232A CH438232A CH487464A CH487464A CH438232A CH 438232 A CH438232 A CH 438232A CH 487464 A CH487464 A CH 487464A CH 487464 A CH487464 A CH 487464A CH 438232 A CH438232 A CH 438232A
- Authority
- CH
- Switzerland
- Prior art keywords
- producing
- carrying
- semiconductor body
- doped semiconductor
- doped
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
- B01J19/087—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy
- B01J19/088—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy giving rise to electric discharges
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J4/00—Feed or outlet devices; Feed or outlet control devices
- B01J4/008—Feed or outlet control devices
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B6/00—Hydrides of metals including fully or partially hydrided metals, alloys or intermetallic compounds ; Compounds containing at least one metal-hydrogen bond, e.g. (GeH3)2S, SiH GeH; Monoborane or diborane; Addition complexes thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
- C30B13/10—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials
- C30B13/12—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials in the gaseous or vapour state
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/16—Feed and outlet means for the gases; Modifying the flow of the gases
- C30B31/165—Diffusion sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/129—Pulse doping
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/169—Vacuum deposition, e.g. including molecular beam epitaxy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S252/00—Compositions
- Y10S252/95—Doping agent source material
- Y10S252/951—Doping agent source material for vapor transport
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/914—Doping
- Y10S438/925—Fluid growth doping control, e.g. delta doping
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- General Health & Medical Sciences (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Catalysts (AREA)
- Photovoltaic Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL291753 | 1963-04-19 |
Publications (1)
Publication Number | Publication Date |
---|---|
CH438232A true CH438232A (de) | 1967-06-30 |
Family
ID=19754628
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH487464A CH438232A (de) | 1963-04-19 | 1964-04-16 | Verfahren zum Herstellen eines dotierten Halbleiterkörpers und Vorrichtung zum Durchführen dieses Verfahrens |
Country Status (11)
Country | Link |
---|---|
US (1) | US3323954A (de) |
AT (1) | AT268379B (de) |
BE (1) | BE646733A (de) |
CH (1) | CH438232A (de) |
DE (1) | DE1290924B (de) |
DK (1) | DK118899B (de) |
ES (2) | ES298807A1 (de) |
FR (1) | FR1395147A (de) |
GB (1) | GB1066593A (de) |
NL (2) | NL142824C (de) |
SE (1) | SE307196B (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2816234A1 (de) * | 1977-04-14 | 1978-10-26 | Westinghouse Electric Corp | Verfahren zum dotieren von hochreinem silicium in einem lichtbogenerhitzer |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3463715A (en) * | 1966-07-07 | 1969-08-26 | Trw Inc | Method of cathodically sputtering a layer of silicon having a reduced resistivity |
US3880743A (en) * | 1968-03-08 | 1975-04-29 | John L Lang | Process for preparing organometallic compounds |
IL74360A (en) * | 1984-05-25 | 1989-01-31 | Wedtech Corp | Method of coating ceramics and quartz crucibles with material electrically transformed into a vapor phase |
PL217778B1 (pl) * | 2011-06-20 | 2014-08-29 | Piotr Medoń | Sposób osuszania glikolu i układ do osuszania glikolu |
RU2597389C2 (ru) * | 2014-10-06 | 2016-09-10 | Акционерное общество "Рязанский завод металлокерамических приборов" (АО "РЗМКП") | Способ легирования кремния |
CN111321405A (zh) * | 2018-12-15 | 2020-06-23 | 兰州交通大学 | 一种航空发动机机匣阻燃涂层电火花多点并行沉积机构 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2616843A (en) * | 1947-07-31 | 1952-11-04 | Sheer Charles | Arc process for the reduction of metals |
US2763581A (en) * | 1952-11-25 | 1956-09-18 | Raytheon Mfg Co | Process of making p-n junction crystals |
US2845894A (en) * | 1953-03-04 | 1958-08-05 | Oran T Mcilvaine | Metallurgy |
US2921892A (en) * | 1954-12-08 | 1960-01-19 | Amalgamated Growth Ind Inc | Apparatus and process for conducting chemical reactions |
BE544843A (de) * | 1955-02-25 | |||
US2895858A (en) * | 1955-06-21 | 1959-07-21 | Hughes Aircraft Co | Method of producing semiconductor crystal bodies |
BE547665A (de) * | 1955-06-28 | |||
DE1029941B (de) * | 1955-07-13 | 1958-05-14 | Siemens Ag | Verfahren zur Herstellung von einkristallinen Halbleiterschichten |
US3099614A (en) * | 1958-12-10 | 1963-07-30 | Sheer Korman Associates | Process for reduction of multiple oxides |
US3099588A (en) * | 1959-03-11 | 1963-07-30 | Westinghouse Electric Corp | Formation of semiconductor transition regions by alloy vaporization and deposition |
US3065391A (en) * | 1961-01-23 | 1962-11-20 | Gen Electric | Semiconductor devices |
US3162526A (en) * | 1961-10-26 | 1964-12-22 | Grace W R & Co | Method of doping semiconductor materials |
US3234051A (en) * | 1962-08-07 | 1966-02-08 | Union Carbide Corp | Use of two magnetic fields in a low pressure arc system for growing crystals |
-
0
- NL NL291753D patent/NL291753A/xx unknown
- NL NL142824D patent/NL142824C/xx active
-
1964
- 1964-04-15 DE DEN24802A patent/DE1290924B/de active Pending
- 1964-04-16 CH CH487464A patent/CH438232A/de unknown
- 1964-04-16 DK DK189464AA patent/DK118899B/da unknown
- 1964-04-16 SE SE4706/64A patent/SE307196B/xx unknown
- 1964-04-16 GB GB15803/64A patent/GB1066593A/en not_active Expired
- 1964-04-16 AT AT332464A patent/AT268379B/de active
- 1964-04-17 BE BE646733A patent/BE646733A/xx unknown
- 1964-04-17 FR FR971235A patent/FR1395147A/fr not_active Expired
- 1964-04-17 ES ES298807A patent/ES298807A1/es not_active Expired
- 1964-04-20 US US361021A patent/US3323954A/en not_active Expired - Lifetime
- 1964-08-01 ES ES0302727A patent/ES302727A1/es not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2816234A1 (de) * | 1977-04-14 | 1978-10-26 | Westinghouse Electric Corp | Verfahren zum dotieren von hochreinem silicium in einem lichtbogenerhitzer |
Also Published As
Publication number | Publication date |
---|---|
BE646733A (de) | 1964-10-19 |
DK118899B (da) | 1970-10-19 |
FR1395147A (fr) | 1965-04-09 |
DE1290924B (de) | 1969-03-20 |
NL142824C (de) | |
NL291753A (de) | |
AT268379B (de) | 1969-02-10 |
SE307196B (de) | 1968-12-23 |
ES302727A1 (es) | 1965-02-16 |
GB1066593A (en) | 1967-04-26 |
US3323954A (en) | 1967-06-06 |
ES298807A1 (es) | 1964-10-16 |
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