CH429975A - Semiconductor crystal for laser - Google Patents
Semiconductor crystal for laserInfo
- Publication number
- CH429975A CH429975A CH314064A CH314064A CH429975A CH 429975 A CH429975 A CH 429975A CH 314064 A CH314064 A CH 314064A CH 314064 A CH314064 A CH 314064A CH 429975 A CH429975 A CH 429975A
- Authority
- CH
- Switzerland
- Prior art keywords
- laser
- semiconductor crystal
- crystal
- semiconductor
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
- H01S5/4043—Edge-emitting structures with vertically stacked active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DEL0044399 | 1963-03-19 |
Publications (1)
Publication Number | Publication Date |
---|---|
CH429975A true CH429975A (en) | 1967-02-15 |
Family
ID=7270661
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH314064A CH429975A (en) | 1963-03-19 | 1964-03-11 | Semiconductor crystal for laser |
Country Status (3)
Country | Link |
---|---|
CH (1) | CH429975A (en) |
DE (1) | DE1464231A1 (en) |
GB (1) | GB1046702A (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50126168U (en) * | 1974-03-30 | 1975-10-16 | ||
JPS54114091A (en) * | 1978-02-24 | 1979-09-05 | Sharp Corp | Semiconductor laser device |
JPS59167083A (en) * | 1983-03-12 | 1984-09-20 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor laser device |
JPS6010685A (en) * | 1983-06-30 | 1985-01-19 | Tokyo Inst Of Technol | Distributed feedback type plane light emitting semiconductor laser |
JPH046217Y2 (en) * | 1988-12-06 | 1992-02-20 | ||
DE102010002966B4 (en) | 2010-03-17 | 2020-07-30 | Osram Opto Semiconductors Gmbh | Laser diode arrangement and method for producing a laser diode arrangement |
-
1963
- 1963-03-19 DE DE19631464231 patent/DE1464231A1/en active Pending
-
1964
- 1964-03-11 CH CH314064A patent/CH429975A/en unknown
- 1964-03-18 GB GB1138564A patent/GB1046702A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
GB1046702A (en) | 1966-10-26 |
DE1464231A1 (en) | 1968-12-12 |
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