CH429975A - Semiconductor crystal for laser - Google Patents

Semiconductor crystal for laser

Info

Publication number
CH429975A
CH429975A CH314064A CH314064A CH429975A CH 429975 A CH429975 A CH 429975A CH 314064 A CH314064 A CH 314064A CH 314064 A CH314064 A CH 314064A CH 429975 A CH429975 A CH 429975A
Authority
CH
Switzerland
Prior art keywords
laser
semiconductor crystal
crystal
semiconductor
Prior art date
Application number
CH314064A
Other languages
German (de)
Inventor
Nat Koehl Guenter Dr Rer
Nat Moench Winfried Dr Rer
Nat Schultz Walter Dr Rer
Nat Sixtus Klaus Dr Rer
Original Assignee
Licentia Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Licentia Gmbh filed Critical Licentia Gmbh
Publication of CH429975A publication Critical patent/CH429975A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4043—Edge-emitting structures with vertically stacked active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Semiconductor Lasers (AREA)
CH314064A 1963-03-19 1964-03-11 Semiconductor crystal for laser CH429975A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DEL0044399 1963-03-19

Publications (1)

Publication Number Publication Date
CH429975A true CH429975A (en) 1967-02-15

Family

ID=7270661

Family Applications (1)

Application Number Title Priority Date Filing Date
CH314064A CH429975A (en) 1963-03-19 1964-03-11 Semiconductor crystal for laser

Country Status (3)

Country Link
CH (1) CH429975A (en)
DE (1) DE1464231A1 (en)
GB (1) GB1046702A (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50126168U (en) * 1974-03-30 1975-10-16
JPS54114091A (en) * 1978-02-24 1979-09-05 Sharp Corp Semiconductor laser device
JPS59167083A (en) * 1983-03-12 1984-09-20 Nippon Telegr & Teleph Corp <Ntt> Semiconductor laser device
JPS6010685A (en) * 1983-06-30 1985-01-19 Tokyo Inst Of Technol Distributed feedback type plane light emitting semiconductor laser
JPH046217Y2 (en) * 1988-12-06 1992-02-20
DE102010002966B4 (en) 2010-03-17 2020-07-30 Osram Opto Semiconductors Gmbh Laser diode arrangement and method for producing a laser diode arrangement

Also Published As

Publication number Publication date
GB1046702A (en) 1966-10-26
DE1464231A1 (en) 1968-12-12

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