CH423022A - Verfahren zur Änderung eines elektrischen Kennwertes eines Halbleiter-Bauelementes - Google Patents

Verfahren zur Änderung eines elektrischen Kennwertes eines Halbleiter-Bauelementes

Info

Publication number
CH423022A
CH423022A CH909065A CH909065A CH423022A CH 423022 A CH423022 A CH 423022A CH 909065 A CH909065 A CH 909065A CH 909065 A CH909065 A CH 909065A CH 423022 A CH423022 A CH 423022A
Authority
CH
Switzerland
Prior art keywords
changing
semiconductor component
electrical characteristic
characteristic
electrical
Prior art date
Application number
CH909065A
Other languages
English (en)
Inventor
Earl Jr Thomas Jacob
Reeder Young Donald
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of CH423022A publication Critical patent/CH423022A/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0635—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors and diodes, or resistors, or capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
    • H01L27/0647—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor
    • H01L27/0652—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/91—Controlling charging state at semiconductor-insulator interface
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49082—Resistor making

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Semiconductor Integrated Circuits (AREA)
CH909065A 1964-06-29 1965-06-29 Verfahren zur Änderung eines elektrischen Kennwertes eines Halbleiter-Bauelementes CH423022A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US378850A US3333326A (en) 1964-06-29 1964-06-29 Method of modifying electrical characteristic of semiconductor member

Publications (1)

Publication Number Publication Date
CH423022A true CH423022A (de) 1966-10-31

Family

ID=23494800

Family Applications (1)

Application Number Title Priority Date Filing Date
CH909065A CH423022A (de) 1964-06-29 1965-06-29 Verfahren zur Änderung eines elektrischen Kennwertes eines Halbleiter-Bauelementes

Country Status (4)

Country Link
US (1) US3333326A (de)
CH (1) CH423022A (de)
DE (1) DE1515884C3 (de)
NL (1) NL6507672A (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3508209A (en) * 1966-03-31 1970-04-21 Ibm Monolithic integrated memory array structure including fabrication and package therefor
US3731375A (en) * 1966-03-31 1973-05-08 Ibm Monolithic integrated structure including fabrication and packaging therefor
US3520051A (en) * 1967-05-01 1970-07-14 Rca Corp Stabilization of thin film transistors
US3835530A (en) * 1967-06-05 1974-09-17 Texas Instruments Inc Method of making semiconductor devices
US3653119A (en) * 1967-12-28 1972-04-04 Sprague Electric Co Method of producing electrical capacitors
US3460010A (en) * 1968-05-15 1969-08-05 Ibm Thin film decoupling capacitor incorporated in an integrated circuit chip,and process for making same
US3525911A (en) * 1968-06-06 1970-08-25 Westinghouse Electric Corp Semiconductor integrated circuit including improved diode structure
US3574932A (en) * 1968-08-12 1971-04-13 Motorola Inc Thin-film beam-lead resistors
US3534237A (en) * 1969-01-21 1970-10-13 Burroughs Corp Power isolation of integrated circuits
US3629667A (en) * 1969-03-14 1971-12-21 Ibm Semiconductor resistor with uniforms current distribution at its contact surface
US3674995A (en) * 1970-08-31 1972-07-04 Texas Instruments Inc Computer controlled device testing and subsequent arbitrary adjustment of device characteristics
US4395293A (en) * 1981-03-23 1983-07-26 Hughes Aircraft Company Accelerated annealing of gallium arsenide solar cells
US4606781A (en) * 1984-10-18 1986-08-19 Motorola, Inc. Method for resistor trimming by metal migration
US4740477A (en) * 1985-10-04 1988-04-26 General Instrument Corporation Method for fabricating a rectifying P-N junction having improved breakdown voltage characteristics
US4782202A (en) * 1986-12-29 1988-11-01 Mitsubishi Denki Kabushiki Kaisha Method and apparatus for resistance adjustment of thick film thermal print heads
US4820657A (en) * 1987-02-06 1989-04-11 Georgia Tech Research Corporation Method for altering characteristics of junction semiconductor devices
US5166769A (en) * 1988-07-18 1992-11-24 General Instrument Corporation Passitvated mesa semiconductor and method for making same
US4980315A (en) * 1988-07-18 1990-12-25 General Instrument Corporation Method of making a passivated P-N junction in mesa semiconductor structure
US9202964B2 (en) 2010-03-01 2015-12-01 First Solar, Inc. System and method for photovoltaic device temperature control while conditioning a photovoltaic device
US8772058B2 (en) * 2012-02-02 2014-07-08 Harris Corporation Method for making a redistributed wafer using transferrable redistribution layers
EP2973748B1 (de) * 2013-03-15 2019-07-31 First Solar System und verfahren zur temperatursteuerung einer photovoltaikvorrichtung während des einrichtens der photovoltaikvorrichtung

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL91981C (de) * 1951-08-24
US2639246A (en) * 1951-11-29 1953-05-19 Gen Electric Method for stabilizing semiconductor material
US2725317A (en) * 1952-04-24 1955-11-29 Bell Telephone Labor Inc Method of fabricating and heat treating semiconductors
US2900531A (en) * 1957-02-28 1959-08-18 Rca Corp Field-effect transistor
US3148129A (en) * 1959-10-12 1964-09-08 Bell Telephone Labor Inc Metal film resistors
US3246173A (en) * 1964-01-29 1966-04-12 Rca Corp Signal translating circuit employing insulated-gate field effect transistors coupledthrough a common semiconductor substrate

Also Published As

Publication number Publication date
NL6507672A (de) 1965-12-30
DE1515884A1 (de) 1969-12-18
DE1515884B2 (de) 1973-04-12
DE1515884C3 (de) 1973-10-31
US3333326A (en) 1967-08-01

Similar Documents

Publication Publication Date Title
CH423022A (de) Verfahren zur Änderung eines elektrischen Kennwertes eines Halbleiter-Bauelementes
CH483087A (de) Verfahren zur Herstellung eines isolierten elektrischen Leiters
CH422161A (de) Verfahren zur Herstellung eines elektrischen Kontaktes an einem Halbleiterelement
AT254948B (de) Verfahren zum Kontaktieren vereinzelter Halbleiteranordnungen
CH414022A (de) Verfahren zur Herstellung eines elektrischen Bauelementes
DE1289191C2 (de) Verfahren zum herstellen eines bauteils fuer eine integrierte halbleiterschaltung
CH435392A (de) Verfahren zur Herstellung eines zusammengesetzten elektrischen Leiters
CH398802A (de) Verfahren zum Anbringen eines elektrischen Anschlusses an einer Halbleiteranordnung
DE1927096B2 (de) Verfahre vorrichtung zum verlegen eines elektrischen drahtes
AT261015B (de) Verfahren zur Herstellung eines Elektrodensystems
CH437455A (de) Verfahren zur Isolierung einer Verbindungsstelle in einer elektrischen Leitung
CH423999A (de) Verfahren zur Herstellung einer Halbleiteranordnung
CH440405A (de) Verfahren zur Herstellung eines elektrischen Leiters
CH400371A (de) Verfahren zur Herstellung einer elektrisch unsymmetrischen Halbleiteranordnung
CH509028A (de) Verfahren zur Positionierung eines elektrischen Schaltungselementes und Halterungselement zur Durchführung eines solchen Verfahrens
AT283483B (de) Verfahren zur Herstellung eines isolierten elektrischen Leiters
CH446544A (de) Verfahren zum Schützen von elektrischen Kontakten
AT239355B (de) Verfahren zur Herstellung eines elektrischen Stromkreises
AT269238B (de) Verfahren zur Herstellung eines Elektrodensystems
CH495039A (de) Verfahren zur Herstellung eines elektrischen Kabels
CH470759A (de) Verfahren zur Herstellung eines Halbleiterbauelementes
AT275631B (de) Verfahren zur Herstellung eines isolierten elektrischen Leiters
CH445648A (de) Verfahren zum Herstellen eines elektrischen Halbleiterbauelementes mit Gehäuse
CH423991A (de) Verfahren zur Herstellung eines elektrischen Schaltungsbauteils
CH528148A (de) Verfahren zum Herstellen einer elektrischen Schaltungsanordnung