CH422996A - Halbleitervorrichtung mit einem Halbleiterkörper, in dem mindestens eine Flächentransistorstruktur vorgesehen ist, und Verfahren zu deren Herstellung - Google Patents

Halbleitervorrichtung mit einem Halbleiterkörper, in dem mindestens eine Flächentransistorstruktur vorgesehen ist, und Verfahren zu deren Herstellung

Info

Publication number
CH422996A
CH422996A CH972762A CH972762A CH422996A CH 422996 A CH422996 A CH 422996A CH 972762 A CH972762 A CH 972762A CH 972762 A CH972762 A CH 972762A CH 422996 A CH422996 A CH 422996A
Authority
CH
Switzerland
Prior art keywords
production
transistor structure
planar transistor
semiconductor device
semiconductor
Prior art date
Application number
CH972762A
Other languages
English (en)
Inventor
Wilhelmus Jochems Pie Johannes
Gerardus Kock Hendrikus
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of CH422996A publication Critical patent/CH422996A/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
    • H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H01L27/0772—Vertical bipolar transistor in combination with resistors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
    • H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/032—Diffusion length

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
CH972762A 1961-08-17 1962-08-14 Halbleitervorrichtung mit einem Halbleiterkörper, in dem mindestens eine Flächentransistorstruktur vorgesehen ist, und Verfahren zu deren Herstellung CH422996A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL268355 1961-08-17

Publications (1)

Publication Number Publication Date
CH422996A true CH422996A (de) 1966-10-31

Family

ID=19753238

Family Applications (1)

Application Number Title Priority Date Filing Date
CH972762A CH422996A (de) 1961-08-17 1962-08-14 Halbleitervorrichtung mit einem Halbleiterkörper, in dem mindestens eine Flächentransistorstruktur vorgesehen ist, und Verfahren zu deren Herstellung

Country Status (10)

Country Link
US (1) US3250968A (de)
AT (1) AT252318B (de)
BE (1) BE621467A (de)
CH (1) CH422996A (de)
DE (1) DE1464286C3 (de)
DK (1) DK111628C (de)
ES (1) ES280027A1 (de)
FI (1) FI41676B (de)
GB (1) GB1017777A (de)
NL (2) NL268355A (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3416049A (en) * 1963-05-17 1968-12-10 Sylvania Electric Prod Integrated bias resistors for micro-logic circuitry
US3418545A (en) * 1965-08-23 1968-12-24 Jearld L. Hutson Photosensitive devices having large area light absorbing junctions
US5140399A (en) * 1987-04-30 1992-08-18 Sony Corporation Heterojunction bipolar transistor and the manufacturing method thereof
JP2581071B2 (ja) * 1987-04-30 1997-02-12 ソニー株式会社 ヘテロ接合型バイポーラトランジスタ及びその製造方法並びにそれを用いたメモリセル

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2666814A (en) * 1949-04-27 1954-01-19 Bell Telephone Labor Inc Semiconductor translating device
BE519804A (de) * 1952-05-09
DE960655C (de) * 1952-10-10 1957-03-28 Siemens Ag Kristalltriode oder -polyode
US3108210A (en) * 1953-03-11 1963-10-22 Rca Corp Multi-electrode semiconductor devices
US2816228A (en) * 1953-05-21 1957-12-10 Rca Corp Semiconductor phase shift oscillator and device
US2787564A (en) * 1954-10-28 1957-04-02 Bell Telephone Labor Inc Forming semiconductive devices by ionic bombardment
NL207910A (de) * 1955-06-20
US3062690A (en) * 1955-08-05 1962-11-06 Hoffman Electronics Corp Semi-conductor device and method of making the same
US3111611A (en) * 1957-09-24 1963-11-19 Ibm Graded energy gap semiconductor devices
NL106425C (de) * 1958-01-14
US3015762A (en) * 1959-03-23 1962-01-02 Shockley William Semiconductor devices
US3029366A (en) * 1959-04-22 1962-04-10 Sprague Electric Co Multiple semiconductor assembly
US3115581A (en) * 1959-05-06 1963-12-24 Texas Instruments Inc Miniature semiconductor integrated circuit
NL260481A (de) * 1960-02-08
US3100276A (en) * 1960-04-18 1963-08-06 Owen L Meyer Semiconductor solid circuits
US3070762A (en) * 1960-05-02 1962-12-25 Texas Instruments Inc Voltage tuned resistance-capacitance filter, consisting of integrated semiconductor elements usable in phase shift oscillator

Also Published As

Publication number Publication date
DE1464286B2 (de) 1973-05-30
AT252318B (de) 1967-02-10
DE1464286C3 (de) 1973-12-13
US3250968A (en) 1966-05-10
ES280027A1 (es) 1962-12-01
NL268355A (de)
BE621467A (de)
DE1464286A1 (de) 1969-04-03
GB1017777A (en) 1966-01-19
FI41676B (de) 1969-09-30
DK111628B (de) 1968-09-23
DK111628C (da) 1968-09-23
NL130500C (de)

Similar Documents

Publication Publication Date Title
CH527497A (de) Halbleitervorrichtung mit einem Halbleiterkörper, bei welchem eine Oberfläche mindestens teilweise mit einer Oxydschicht bedeckt ist, und Verfahren zur Herstellung der Halbleitervorrichtung
CH398219A (de) Dichtungsvorrichtung und Verfahren zu deren Herstellung
CH517359A (de) Halbleiterelement und Verfahren zu dessen Herstellung
AT324421B (de) Halbleitervorrichtung mit einem lateralen transistor und verfahren zur herstellung einer solchen
AT275606B (de) Halbleitervorrichtung mit einem Feldeffekttransistor und Verfahren zu ihrer Herstellung
CH446534A (de) Halbleiteranordnung und Verfahren zum Herstellen derselben
CH422996A (de) Halbleitervorrichtung mit einem Halbleiterkörper, in dem mindestens eine Flächentransistorstruktur vorgesehen ist, und Verfahren zu deren Herstellung
CH407334A (de) Verfahren für die Herstellung von pin-Übergangs-Festkörpervorrichtungen, eine nach diesem Verfahren hergestellte pin-Übergangs-Festkörpervorrichtung und eine Verwendung derselben
AT320736B (de) Halbleitervorrichtung mit einem Halbleiterkörper, der mindestens einen Hochfrequenz-Leistungstransistor enthält, und Verfahren zur Herstellung derselben
CH447388A (de) Verfahren zum Herstellen einer Halbleiteranordnung, nach diesem Verfahren hergestellter Transistor sowie Verwendung des Transistors
CH411065A (de) Verfahren zur Herstellung eines nicht gleichrichtenden Überganges zwischen einer Elektrode und einem thermoelektrischen Halbleiter und nach dem Verfahren hergestellter Übergang
CH393562A (de) Halbleitervorrichtung, insbesondere photoempfindliche Vorrichtung, und Verfahren zu deren Herstellung
AT274925B (de) Schichtförmiger, supraleitfähiger, bandartiger Körper und Verfahren zu dessen Herstellung
AT270765B (de) Elektrolumineszente Halbleiterdiode und Verfahren zu deren Herstellung
CH364845A (de) Verfahren zum Herstellen von Halbleiteranordnungen mit einem Halbleiterkörper und mindestens einer in den Halbleiterkörper einlegierten aluminiumhaltigen Elektrode
FR1318389A (fr) Procédé d'hydrocraquage
CH422180A (de) Halbleiteranordnung und Verfahren zu deren Herstellung
CH453509A (de) Zusammengesetzter Halter für eine Halbleitervorrichtung und Verfahren zu dessen Herstellung
CH402348A (de) Bauelement mit wabenförmiger Struktur sowie Verfahren und Vorrichtung zur Herstellung des Bauelementes
CH417078A (de) Harzmasse und Verfahren zu deren Herstellung
CH409150A (de) Verfahren zur Herstellung einer pin-Halbleitervorrichtung, nach diesem Verfahren hergestellte pin-Halbleitervorrichtung und Verwendung derselben
NL148444B (nl) Werkwijze voor het vervaardigen van een halfgeleiderinrichting door het aanbrengen van gediffundeerde zones in een halfgeleiderlichaam en halfgeleiderinrichting vervaardigd volgens de werkwijze.
CH452061A (de) Verfahren zur Herstellung einer Halbleitervorrichtung, insbesondere einer Kristalldiode oder eines Transistors, und nach diesem Verfahren hergestellte Halbleitervorrichtung
CH422997A (de) Halbleitervorrichtung mit einem mit Elektroden versehenen Halbleiterkörper aus Cadmiumtellurid und Verfahren zu deren Herstellung
CH385665A (de) Türe mit einem in den Türflügel eingebauten eine Hemmvorrichtung aufweisenden Türschliesser