CH414571A - Method for producing semiconducting elements, in particular silicon or germanium - Google Patents

Method for producing semiconducting elements, in particular silicon or germanium

Info

Publication number
CH414571A
CH414571A CH646961A CH646961A CH414571A CH 414571 A CH414571 A CH 414571A CH 646961 A CH646961 A CH 646961A CH 646961 A CH646961 A CH 646961A CH 414571 A CH414571 A CH 414571A
Authority
CH
Switzerland
Prior art keywords
germanium
particular silicon
semiconducting elements
producing semiconducting
producing
Prior art date
Application number
CH646961A
Other languages
German (de)
Inventor
Sirtl Erhard Dr Dipl-Chem
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH414571A publication Critical patent/CH414571A/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00Silicon; Compounds thereof
    • C01B33/04Hydrides of silicon
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00Silicon; Compounds thereof
    • C01B33/02Silicon
    • C01B33/021Preparation
    • C01B33/027Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/03Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of silicon halides or halosilanes or reduction thereof with hydrogen as the only reducing agent
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00Silicon; Compounds thereof
    • C01B33/08Compounds containing halogen
    • C01B33/107Halogenated silanes
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22BPRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
    • C22B41/00Obtaining germanium
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/08Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02Epitaxial-layer growth
    • C30B25/08Reaction chambers; Selection of materials therefor

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Vapour Deposition (AREA)
  • Silicon Compounds (AREA)
CH646961A 1960-06-21 1961-06-02 Method for producing semiconducting elements, in particular silicon or germanium CH414571A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES69024A DE1123301B (en) 1960-06-21 1960-06-21 Process for the production of the semiconducting elements silicon and germanium

Publications (1)

Publication Number Publication Date
CH414571A true CH414571A (en) 1966-06-15

Family

ID=7500672

Family Applications (1)

Application Number Title Priority Date Filing Date
CH646961A CH414571A (en) 1960-06-21 1961-06-02 Method for producing semiconducting elements, in particular silicon or germanium

Country Status (3)

Country Link
CH (1) CH414571A (en)
DE (1) DE1123301B (en)
GB (1) GB960893A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4102764A (en) * 1976-12-29 1978-07-25 Westinghouse Electric Corp. High purity silicon production by arc heater reduction of silicon intermediates
CN102134753B (en) * 2010-12-14 2012-10-03 浙江宝利特新能源股份有限公司 Automatic liquid-replenishing device for diffusion furnace in solar battery production

Also Published As

Publication number Publication date
GB960893A (en) 1964-06-17
DE1123301C2 (en) 1962-08-30
DE1123301B (en) 1962-02-08

Similar Documents

Publication Publication Date Title
CH412821A (en) Method for producing single-crystal, in particular thin, semiconducting layers
CH426745A (en) Process for the production of thin, monocrystalline semiconducting layers
CH432656A (en) Method for manufacturing a semiconductor device
CH391106A (en) Method for manufacturing semiconductor devices
CH401273A (en) Method of manufacturing semiconductor elements
CH414865A (en) Process for the production of several semiconductor components at the same time
BE610268A (en) Method and composition for photopolymerization.
CH414572A (en) Method of manufacturing a semiconducting element
CH400583A (en) Process for producing wear surfaces on tools
CH387720A (en) Method for producing a thermoelectric component
CH404960A (en) Process for polymerizing glycolide
CH401919A (en) Method for producing elongated, in particular band-shaped semiconductor bodies
CH367898A (en) Method of manufacturing semiconductor devices
CH414571A (en) Method for producing semiconducting elements, in particular silicon or germanium
CH387176A (en) Method for manufacturing semiconductor components
CH410196A (en) Method for manufacturing semiconductor devices
CH444828A (en) Method for manufacturing semiconductor components
CH393562A (en) Semiconductor device, in particular photosensitive device, and method for the production thereof
CH413112A (en) Method of manufacturing semiconductor devices
CH414019A (en) Method for manufacturing a semiconductor component
CH401918A (en) Method for producing elongated, in particular band-shaped semiconductor bodies
CH391672A (en) Method for manufacturing semiconductor rods
CH429364A (en) Process for etching semiconductor bodies
CH401634A (en) Process for the shaping processing of semiconductor crystals
CH341578A (en) Process for producing semiconducting, in particular light-sensitive, devices