CH407330A - Halbleiteranordnung zur Erzeugung von Impulsen - Google Patents
Halbleiteranordnung zur Erzeugung von ImpulsenInfo
- Publication number
- CH407330A CH407330A CH87161A CH87161A CH407330A CH 407330 A CH407330 A CH 407330A CH 87161 A CH87161 A CH 87161A CH 87161 A CH87161 A CH 87161A CH 407330 A CH407330 A CH 407330A
- Authority
- CH
- Switzerland
- Prior art keywords
- semiconductor arrangement
- generating pulses
- pulses
- generating
- semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/70—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices having only two electrodes and exhibiting negative resistance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/111—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors
- H01L31/1113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors the device being a photothyristor
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/35—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar semiconductor devices with more than two PN junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/42—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Ceramic Engineering (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US4398A US3160828A (en) | 1960-01-25 | 1960-01-25 | Radiation sensitive semiconductor oscillating device |
Publications (1)
Publication Number | Publication Date |
---|---|
CH407330A true CH407330A (de) | 1966-02-15 |
Family
ID=21710609
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH87161A CH407330A (de) | 1960-01-25 | 1961-01-25 | Halbleiteranordnung zur Erzeugung von Impulsen |
Country Status (3)
Country | Link |
---|---|
US (1) | US3160828A (de) |
CH (1) | CH407330A (de) |
DE (1) | DE1225700B (de) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3270235A (en) * | 1961-12-21 | 1966-08-30 | Rca Corp | Multi-layer semiconductor electroluminescent output device |
US3328584A (en) * | 1964-01-17 | 1967-06-27 | Int Rectifier Corp | Five-layer light switch |
US3325748A (en) * | 1964-05-01 | 1967-06-13 | Texas Instruments Inc | Piezoelectric semiconductor oscillator |
DE1516754B1 (de) * | 1965-05-27 | 1972-06-08 | Fujitsu Ltd | Halbleitervorrichtung |
US3333196A (en) * | 1965-06-28 | 1967-07-25 | Abraham George | Electrical switching means |
JPS4974486A (de) * | 1972-11-17 | 1974-07-18 | ||
US4577979A (en) * | 1983-04-21 | 1986-03-25 | Celanese Corporation | Electrical temperature pyrolyzed polymer material detector and associated circuitry |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2633806A (en) * | 1947-02-08 | 1953-04-07 | Frank M Perkins | Hydraulic transmission |
BE523990A (de) * | 1952-11-05 | |||
NL105840C (de) * | 1953-10-24 | |||
DE1021082B (de) * | 1954-06-02 | 1957-12-19 | Siemens Ag | Flaechentransistor mit fuenf Elektroden, die an fuenf abwechselnd aufeinanderfolgenden Halbleiterschichten vom n-Typ und p-Typ anliegen, deren zweite und vierte Schicht als Basisschichten dienen |
US2862416A (en) * | 1954-06-09 | 1958-12-02 | Gen Electric | Light intensity measuring device including semiconductor translating circuit |
US3036226A (en) * | 1958-12-15 | 1962-05-22 | Ibm | Negative resistance semiconductor circuit utilizing four-layer transistor |
US2831126A (en) * | 1954-08-13 | 1958-04-15 | Bell Telephone Labor Inc | Bistable transistor coincidence gate |
NL207367A (de) * | 1955-05-25 | |||
US2779877A (en) * | 1955-06-17 | 1957-01-29 | Sprague Electric Co | Multiple junction transistor unit |
NL99632C (de) * | 1955-11-22 | |||
BE557842A (de) * | 1956-06-01 | |||
US2944165A (en) * | 1956-11-15 | 1960-07-05 | Otmar M Stuetzer | Semionductive device powered by light |
US2936384A (en) * | 1957-04-12 | 1960-05-10 | Hazeltine Research Inc | Six junction transistor signaltranslating system |
US2980810A (en) * | 1957-12-30 | 1961-04-18 | Bell Telephone Labor Inc | Two-terminal semiconductive switch having five successive zones |
US3040191A (en) * | 1958-06-10 | 1962-06-19 | Westinghouse Electric Corp | Switching systems |
US2966434A (en) * | 1958-11-20 | 1960-12-27 | British Thomson Houston Co Ltd | Semi-conductor devices |
US2986724A (en) * | 1959-05-27 | 1961-05-30 | Bell Telephone Labor Inc | Negative resistance oscillator |
US2980832A (en) * | 1959-06-10 | 1961-04-18 | Westinghouse Electric Corp | High current npnp switch |
US3018392A (en) * | 1959-07-02 | 1962-01-23 | Gen Precision Inc | Monostable multivibrator employing four zone semiconductive gate in series with at least a transistor |
-
1960
- 1960-01-25 US US4398A patent/US3160828A/en not_active Expired - Lifetime
-
1961
- 1961-01-24 DE DEW29323A patent/DE1225700B/de active Pending
- 1961-01-25 CH CH87161A patent/CH407330A/de unknown
Also Published As
Publication number | Publication date |
---|---|
US3160828A (en) | 1964-12-08 |
DE1225700B (de) | 1966-09-29 |
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